CN111630628A - 半导体制造工艺中用于形成微细硅图案的新型蚀刻方法 - Google Patents

半导体制造工艺中用于形成微细硅图案的新型蚀刻方法 Download PDF

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CN111630628A
CN111630628A CN201980009723.9A CN201980009723A CN111630628A CN 111630628 A CN111630628 A CN 111630628A CN 201980009723 A CN201980009723 A CN 201980009723A CN 111630628 A CN111630628 A CN 111630628A
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silicon
pattern
forming
fluorine
etching
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CN111630628B (zh
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李秀珍
金起洪
李昇勋
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Yc Chemical Products Co ltd
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Youngchang Chemical Co Ltd
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Abstract

本发明的目的是提供一种用于在半导体制造工艺中体现大纵横比的微细硅图案的工艺，涉及一种处理得在有机碳膜层选择地附着耐氟酸性物质后，使用含氟酸水溶液，以湿式蚀刻形成图案的新型湿式蚀刻方法，本发明的以湿式蚀刻形成图案的方法在形成CD小的图案时，不对数μm深度的蚀刻对象物的活性区域造成损伤地进行蚀刻，从而表现出提供微细图案形成方法的效果。

Description

半导体制造工艺中用于形成微细硅图案的新型蚀刻方法
技术领域
本发明涉及一种在半导体制造工艺中，为了形成微细硅或硅化合物图案，在有机碳膜图案上以选择性附着的方式涂覆耐氟酸性物质后，使用含氟酸水溶液，以湿式蚀刻形成图案的新型湿式蚀刻方法。
背景技术
最近，随着半导体设备的小型化及集成化，要求体现微细图案，作为形成这种微细图案的方法，通过开发曝光装备或导入追加工艺的光刻胶图案的微细化是高效的。
在制造半导体的工艺中，过去利用365nm波长的i-线(i-line)光源，在半导体基板形成图案，但为了形成更加微细的图案，需要更小波段的光源。
实际上，以KrF(248nm)为开端，开发了利用ArF(198nm)、EUV(extreme ultraviolet-极紫外，13.5nm)光源的光刻(lithography)、ArF光刻的重叠曝光(双重图案化光刻)技术，从而现在已经商用化或正在商用化当中，并利用这些技术可以体现更微细的图案。
为了体现大纵横比(aspect ratio)大的硅微细化图案，如果使用如同以往厚的厚度(>500nm)的光刻胶，则光刻胶的图案纵横比升高，发生图案塌陷，因而在体现具有大纵横比的硅图案方面成为障碍。与图案塌陷相关联，如果降低光刻胶的厚度，则在后续干式蚀刻(Dry etch)工艺中，无法充分发挥作为对基板(substrate)的掩膜(mask)的作用，由于这种理由，无法制作为了体现图案所需的深度程度深的图案。
为了解决这种问题，使用称为无定形碳膜(ACL:amorphous carbon layer)或SOC(spin on carbon，旋涂的碳)或者SOH(spin on hardmask，旋涂的掩膜)等硬掩膜(Hardmask)的有机碳膜材料来进行工艺，但该方法也在形成更深的硅图案方面表现出界限。
在这种工艺中，应用如下方法，即，形成将要进行蚀刻的膜后，通过利用等离子体的选择性干式蚀刻来形成图案的方法。
如果简略地考查这种工艺顺序，则在基板层上涂覆作为有机碳膜的SOC层，以化学气相沉积法沉积作为无机膜的SiON层，在其上涂覆光刻胶并进行曝光而进行图案化。利用图案化的光刻胶，以卤素等离子体蚀刻SiON层后，以氧等离子体蚀刻有机碳膜层，将最终基板层利用卤素等离子体以放大图案深度的方式进行蚀刻。
如果使用卤素等离子体，则在作为无机膜的SiON层中，蚀刻速度快于作为有机膜的光刻胶，因此即使以薄的厚度的光刻胶，也可以转写希望的图案，如果使用氧等离子体，则在作为有机碳膜的SOC层中，速度快于SiON层，因而容易实现蚀刻。
最终，由于基板层为Si、SiO2或SiN，因而利用相比碳膜质更容易蚀刻基板层的卤素等离子体，以放大图案的深度的方式进行转写。
在为了体现微细化图案而导入硬掩膜的工艺中，随着图案微细化，图案的纵横比进一步升高，由此，在可以以干式蚀刻工艺体现的图案发生问题。为了制作微细图案，需更深地形成基板层，而如果要以干式蚀刻工艺进行，则需将光刻胶层或有机碳膜层及ACL层的厚度制作为更厚，在ArF或KrF PR情况下，由于树脂结构上的原因，在如同i-线PR提高厚度方面存在界限，如果提高有机碳膜层的厚度，则在进行干式蚀刻工艺时，图案会弯曲或折断而无法应用。另外，如果要提高ACL层的厚度，则沉积时间和费用增加而存在生产单价上升及效率下降的缺点，更重要的是可体现的厚度也是限定的，因此用具有大纵横比的现在数十或数百nm宽度的图案，无法蚀刻远比数μm深度更深的数十μm深度的硅或硅化合物层。
本发明的发明人着眼于此，为了体现以现有工艺无法实现的大纵横比的微细硅或硅化合物图案，执行了对新型工艺开发的研究，研究执行结果，被评价为，相比于干式蚀刻(Dry ethc)，湿式蚀刻(Wet etch)在工艺方面蚀刻速度快，具有稳定性的优秀的蚀刻，而在费用方面也被认为更经济，因而开发了一种可以使用湿式方法形成更微细图案的技术。
发明内容
要解决的问题
本发明涉及一种新型湿式蚀刻方法，在半导体制造工艺中，为了形成微细硅或硅化合物图案，在有机碳膜层上以选择性附着的方式涂覆耐氟酸性物质后，使用含氟酸水溶液，以湿式蚀刻来形成图案。
解决问题的方案
本发明涉及一种为了形成希望的图案，在光刻胶图案刻蚀后剩留的有机碳膜层上以选择性附着的方式涂覆耐氟酸性物质后，使用含氟酸水溶液，以湿式蚀刻来形成图案的方法。
更详细而言，在半导体制造工艺中的硅或硅化合物层的蚀刻工艺中，在蚀刻对象物以适当厚度依次层叠有机膜和无机膜，首先涂覆含有多量碳的有机碳膜层，然后以化学气相沉积法沉积SiON层后，在其上涂覆光刻胶，进行图案化。利用图案化的光刻胶，用卤素等离子体蚀刻SiON层后，用氧等离子体蚀刻有机碳膜层，只蚀刻要形成的图案深度的一部分。
然后，在蚀刻对象物上，将耐氟酸性强化材料选择性地只附着于有机碳膜层并进行烘烤而形成保护膜后，利用包含氟酸的水溶液对所述基板进行第二次湿式蚀刻而形成希望的图案。
其中，所谓有机碳膜，意指能够以旋涂或化学、物理沉积方法在晶片上涂覆的含碳量为30％至100％的膜质。
在所述有机碳膜层中，能够进行旋涂的SOC的旋涂厚度不被特别限定，但可以以
Figure BDA0002597695200000031
厚度来涂覆，可以在150℃至400℃温度下，进行1分钟至5分钟烘烤工艺。
就能够以所述化学或物理沉积方法形成的SiON而言，可以在沉积装备中，利用等离子体，以0.01至10托的压力，以
Figure BDA0002597695200000032
厚度来形成。
耐氟酸性强化材料为聚酰亚胺、聚乙烯、聚丙烯、聚二乙烯、聚氯乙烯、聚咪唑、聚碳酸酯、聚苯乙烯、聚对苯二甲酸乙二醇酯、聚对苯二甲酸丁二醇酯、聚苯醚、聚偏二氟乙烯，只要是具有耐氟酸性且能够选择性地涂覆于有机碳膜的物质，则均可。
优选地，所述耐氟酸性强化材料的旋涂涂覆厚度以
Figure BDA0002597695200000033
厚度来涂覆，在50℃至400℃温度下，进行1分钟至5分钟时间烘烤工艺。
耐氟酸性强化材料的旋涂厚度如果以低于(薄于)
Figure BDA0002597695200000041
的方式涂覆，则有机碳膜涂覆得不全，从而在利用氟酸溶液的湿式蚀刻过程中，有机碳膜被氟酸蚀刻，因而无法形成希望的蚀刻形态。另一方面，如果以高于(厚于)
Figure BDA0002597695200000042
的方式涂覆，则耐氟酸性涂覆物质以物理方式填充于要蚀刻的图案大小为数十～数百nm的有机碳膜层之间，即图案与图案之间，导致无法实现利用氟酸溶液的蚀刻，因而无法应用。由于这种理由，本发明的发明人公布，耐氟酸性强化材料的旋涂厚度优选为
Figure BDA0002597695200000043
进而，由于要蚀刻的图案的大小根据涂覆于有机碳膜的耐氟酸性强化材料的旋涂厚度而变化，因此，本发明的发明人考虑到数十～数百nm的有机碳膜层的蚀刻余量，确认了有机膜图案大小的10％以下为适当，且执行长期、持续研究的结果，公布了耐氟酸性强化材料的旋涂厚度更优选为
Figure BDA0002597695200000044
Figure BDA0002597695200000045
发明效果
根据本发明的以新型湿式蚀刻形成微细图案的方法，是以干式蚀刻进行刻蚀，以便在硅或硅化合物层上剩留有机碳膜层，然后在剩留的有机碳膜层选择性地附着耐氟酸性强化材料而形成图案保护膜。耐氟酸性强化材料为与有机碳膜层发生反应的物质，其保护有机碳膜表面，从而在湿式蚀刻时，加强对氟酸的耐蚀刻性。因此，在为了形成微细图案而进行利用氟酸的湿式蚀刻工艺时，可以在没有图案的倒塌或弯曲的情况下，形成具有希望的高纵横比(high aspect ratio)的硅或硅化合物图案。
最佳实施方式
下面更详细地说明本发明。
本发明涉及一种新型湿式蚀刻方法，在半导体制造工艺中，为了形成微细硅图案而在剩留的有机碳膜上进行耐氟酸性强化材料处理后，使用含氟酸水溶液，以湿式蚀刻形成图案。
本发明中的以新型湿式蚀刻形成微细图案的方法，由如下步骤形成图案：在基板层上形成有机碳膜层，以化学气相沉积法沉积SiON层，在其上涂覆光刻胶并进行曝光而形成掩膜的步骤；利用所述掩膜进行第一次干式蚀刻而只蚀刻要形成的图案深度的一部分的步骤；在所述基板上涂覆耐氟酸性强化材料并进行烘烤的步骤；及利用包含氟酸的水溶液对所述基板进行第二次湿式蚀刻的步骤。
所谓有机碳膜层，是指含碳量为30％至100％的，就形成膜的方法而言，旋涂、化学或物理沉积方法均可。
在所述有机碳膜层中，能够进行旋涂的SOC的旋涂厚度不被特别限定，但可以涂覆
Figure BDA0002597695200000051
厚度，可以在150℃至400℃温度下进行1分钟至5分钟时间烘烤工艺。
就能够以所述化学或物理沉积方法形成的SiON而言，可以在沉积装备中，利用等离子体，以0.01至10托(torr)的压力，形成
Figure BDA0002597695200000052
Figure BDA0002597695200000053
厚度。
耐氟酸性强化材料为聚酰亚胺、聚乙烯、聚丙烯、聚二乙烯、聚氯乙烯、聚咪唑(poly imidazole)、聚碳酸酯、聚苯乙烯、聚对苯二甲酸乙二醇酯、聚对苯二甲酸丁二醇酯、聚苯醚(polyphenylene ether)、聚偏二氟乙烯，只要是具有耐氟酸性且能够选择性地涂覆于有机碳膜的物质，则均可。
所述耐氟酸性强化材料的旋涂厚度以
Figure BDA0002597695200000054
的厚度来涂覆，可以在50℃至400℃温度下进行1分钟至5分钟时间烘烤工艺。
耐氟酸性强化材料的旋涂厚度如果以低于(薄于)
Figure BDA0002597695200000055
的方式涂覆，则有机碳膜涂覆得不全，从而在利用氟酸溶液的湿式蚀刻过程中，有机碳膜被氟酸蚀刻，因而无法形成希望的蚀刻形态。
另一方面，耐氟酸性强化材料的旋涂厚度如果以高于(厚于)
Figure BDA0002597695200000056
的方式涂覆，则耐氟酸性涂覆物质以物理方式填充于要蚀刻的图案大小为数十～数百nm的有机碳膜层之间，即图案与图案之间，导致无法实现利用氟酸溶液的蚀刻，因而无法应用。
由于这种理由，本发明的发明人公布耐氟酸性强化材料的旋涂厚度优选为
Figure BDA0002597695200000057
另外，要蚀刻的图案的大小根据涂覆于有机碳膜的耐氟酸性强化材料的旋涂厚度而变化。鉴于这一点，本发明的发明人考虑到数十～数百nm的有机碳膜层的蚀刻余量，对于涂覆于有机碳膜的耐氟酸性强化材料的旋涂厚度，确认了有机膜图案大小的10％以下为适当，且执行研究结果，公布了耐氟酸性强化材料的旋涂厚度更优选为
Figure BDA0002597695200000061
通过优选实施例的以下详细说明，可以更明确地理解，关于本发明的目的和技术构成及关于其的作用效果的详细事项。
就本发明的工艺而言，首先在基板层上涂覆作为有机碳膜的SOC(spin oncarbon；主要由碳构成的聚合物水溶液)层，以化学气相沉积法沉积作为无机膜的SiON层，在其上涂覆光刻胶并进行曝光而形成掩膜。
在所述有机碳膜层中能够进行旋涂的SOC的旋涂厚度不被特别限定，但可以以
Figure BDA0002597695200000062
厚度的厚度来涂覆，可以在150℃至400℃温度下进行1分钟至5分钟时间烘烤工艺。
就能够以所述化学或物理沉积方法形成的SiON而言，可以在沉积装备中，利用等离子体，以0.01至10托的压力，以
Figure BDA0002597695200000063
的厚度形成。
利用所述形成的掩膜，利用能够对沉积的膜进行蚀刻的蚀刻气体，实施第一次干式蚀刻。此时，所述第一次干式蚀刻并非以要形成的图案的全体深度实施完全的蚀刻，而是只蚀刻一部分。
然后，在已进行第一次干式蚀刻的基板上利用耐氟酸性强化材料进行处理并进行烘烤。
耐氟酸性强化材料为聚酰亚胺、聚乙烯、聚丙烯、聚二乙烯、聚氯乙烯、聚咪唑、聚碳酸酯、聚苯乙烯、聚对苯二甲酸乙二醇酯、聚对苯二甲酸丁二醇酯、聚苯醚、聚偏二氟乙烯，只要是具有耐氟酸性且能够选择性地涂覆于有机碳膜的物质，则均可。
所述耐氟酸性强化材料的旋涂厚度不被特别限定，但应以
Figure BDA0002597695200000064
Figure BDA0002597695200000065
厚度涂覆，优选地，应以
Figure BDA0002597695200000066
厚度涂覆，可以在50℃至400℃温度下，进行1分钟至5分钟时间烘烤工艺。
此时，就所述耐氟酸性强化材料而言，在烘烤时，与作为有机膜层的SOC表面反应而形成薄的涂覆膜，在以包含氟酸的水溶液进行第二次湿式蚀刻时，该涂覆膜发挥保护膜作用。
然后是，对所述基板进行第二次湿式蚀刻而完成膜的图案的步骤。利用所述形成的保护膜，使用含氟酸水溶液，通过第二次湿式蚀刻进行蚀刻，获得希望的图案，利用刻蚀工艺等完成图案。
使用所述第二次湿式蚀刻的含氟酸水溶液，以100rpm、15mL/s的速度喷射10秒时间后，放置(puddle)30秒时间，以2,000rpm转数，使晶片旋转20秒时间，从而完成了图案形成。
以下具体记述本发明的优选实施方法。
下面说明本发明的优选实施例及比较例。但是，下述实施例只是本发明的一个优选实施例，并非本发明限定于下述实施例。
具体实施方式
实施例1～7及比较例1～6
实施例1
在基板层上，按
Figure BDA0002597695200000071
涂覆作为有机碳膜的SOC(spin on carbon；主要由碳构成的聚合物水溶液)层，在400℃温度下进行3分钟时间烘烤工艺，用化学气相沉积法，按
Figure BDA0002597695200000072
厚度沉积作为无机膜的SiON层后，将KrF用光刻胶涂覆
Figure BDA0002597695200000073
厚度，然后利用尼康204BKrF曝光装备，在24mj下进行曝光，从而形成具有200nm大小图案的掩膜。
利用所述形成的掩膜，利用CF4混合蚀刻气体，针对沉积的膜实施第一次干式蚀刻，以使有机碳膜层剩留
Figure BDA0002597695200000074
然后在已进行第一次干式蚀刻的基板上，以旋涂方式涂覆包含0.1wt％聚酰亚胺的有机溶剂液，在200℃下烘烤2分钟时间，涂覆聚酰亚胺
Figure BDA0002597695200000075
厚度。
使用所述第二次湿式蚀刻的含氟酸水溶液，以100rpm、15mL/s速度喷射10秒时间后，放置30秒时间，并以2000rpm转数使晶片旋转20秒时间，从而完成图案形成工艺。
实施例2
利用与实施例1相同的方法，在已进行第一次干式蚀刻的基板上，利用包含0.5wt％聚酰亚胺的有机溶剂液，涂覆聚酰亚胺
Figure BDA0002597695200000076
厚度。
此后的处理工艺以与实施例1相同的方式进行，从而完成了图案形成。
实施例3
利用与实施例1相同的方法，在已进行第一次干式蚀刻的基板上，利用包含0.3wt％聚酰亚胺的有机溶剂液，涂覆聚酰亚胺
Figure BDA0002597695200000081
厚度。
此后的处理工艺以与实施例1相同的方式进行，从而完成了图案形成。
实施例4
利用与实施例1相同的方法，在已进行第一次干式蚀刻的基板上，利用包含7wt％聚酰亚胺的有机溶剂液，涂覆聚酰亚胺
Figure BDA0002597695200000082
厚度。
此后的处理工艺以与实施例1相同的方式进行，从而完成了图案形成。
实施例5
利用与实施例1相同的方法，在已进行第一次干式蚀刻的基板上，利用包含7wt％聚酰亚胺的有机溶剂液，涂覆聚酰亚胺
Figure BDA0002597695200000083
厚度。
实施例6
变更耐氟酸性强化材料，利用与实施例1相同的方法，在已进行第一次干式蚀刻的基板上，利用包含0.1wt％聚咪唑的有机溶剂液，涂覆聚咪唑
Figure BDA0002597695200000084
厚度。
此后的处理工艺以与实施例1相同的方式进行，从而完成了图案形成。
实施例7
为了确认不同蚀刻时间下的有机碳膜的消失与硅蚀刻程度而如下实施。
利用与实施例1相同的方法，在已进行第一次干式蚀刻的基板上，利用包含0.1wt％聚咪唑的有机溶剂液，涂覆聚咪唑
Figure BDA0002597695200000085
厚度。
使用所述第二次湿式蚀刻的含氟酸水溶液，以100rpm、15mL/s速度喷射120秒时间后，放置60秒时间，以2000rpm转数使晶片旋转20秒时间，从而完成了图案形成。
比较例1
利用与实施例1相同的方法，在已进行第一次干式蚀刻的基板上没有涂覆聚酰亚胺等耐氟酸性物质。
此后的处理工艺进行与实施例1相同的湿式蚀刻。
比较例2
利用与实施例1相同的方法，在已进行第一次干式蚀刻的基板上，利用包含0.1wt％聚酰亚胺的有机溶剂液，涂覆聚酰亚胺
Figure BDA0002597695200000091
厚度。
此后的处理工艺进行与实施例1相同的湿式蚀刻。
比较例3
利用与实施例1相同的方法，在已进行第一次干式蚀刻的基板上，利用包含0.1wt％聚酰亚胺的有机溶剂液，涂覆聚酰亚胺
Figure BDA0002597695200000092
厚度。
使用所述第二次湿式蚀刻的含氟酸水溶液，以100rpm、15mL/s速度喷射120秒时间后，放置60秒时间，以2000rpm转数使晶片旋转20秒时间，从而完成了图案形成。
比较例4
利用与实施例1相同的方法，在已进行第一次干式蚀刻的基板上，利用包含聚酰亚胺7wt％的有机溶剂液，涂覆聚酰亚胺
Figure BDA0002597695200000093
厚度。
此后的处理工艺进行与实施例1相同的湿式蚀刻。
比较例5
利用与实施例1相同的方法，在已进行第一次干式蚀刻的基板上，利用包含7wt％聚酰亚胺的有机溶剂液，涂覆聚酰亚胺
Figure BDA0002597695200000094
厚度。
此后的处理工艺进行与实施例1相同的湿式蚀刻。
比较例6
利用与实施例1相同的方法，在已进行第一次干式蚀刻的基板上，利用7wt％包含聚酰亚胺的有机溶剂液，涂覆聚酰亚胺
Figure BDA0002597695200000095
厚度。
此后的处理工艺进行与实施例1相同的湿式蚀刻。
实施例及比较例评价
如果考查实施例1～5的结果，确认了在有机碳膜上涂覆的耐氟酸性强化材料的旋涂厚度为
Figure BDA0002597695200000101
时，可以在没有让剩留的有机碳膜层消失的情况下，形成宽度200μm、深度1.2μm的硅图案。
另外，在利用聚咪唑作为耐氟酸性涂覆物质进行处理的实施例6中，也可以确认与实施例1～5相同的结果。进而确认了虽然并未记载为实施例，但其他耐氟酸性涂覆物质也表现出相同的结果。
而且，即使在延长氟酸溶液处理时间的实施例7的情况下，也可以在没有让剩留的有机碳膜层消失的情况下，形成宽度208μm、深度15μm的硅图案。
与之相比，确认了比较例1是在已进行第一次干式蚀刻的基板上没有涂覆聚酰亚胺等耐氟酸性物质的状态下进行湿式蚀刻，从而有机碳膜层因氟酸而完全消失，因此无法形成硅图案。
比较例2是涂覆聚酰亚胺
Figure BDA0002597695200000102
厚度，确认为涂覆的有机碳膜层一部分被塌陷，从而不完全地形成宽度200μm、深度1.2μm的硅图案。
比较例3是相比于比较例2延长了蚀刻时间，确认为如此延长蚀刻时间时，有机碳膜层完全消失，从而无法形成硅图案。
比较例4是涂覆聚酰亚胺
Figure BDA0002597695200000103
厚度，比较例5是涂覆聚酰亚胺
Figure BDA0002597695200000104
Figure BDA0002597695200000105
厚度，在这种情况下，几乎没有形成硅图案。比较例6是涂覆聚酰亚胺
Figure BDA0002597695200000106
厚度，在这种情况下，完全没有形成硅图案。
而且，比较例4至6的剖面时，确认了成为原因的是有机碳膜层的图案之间被耐氟酸性涂覆物填充，从而连已被蚀刻的硅层也被涂覆而被保护。
如果整理实施例及比较例的结果，则被评价为在耐氟酸性物质的涂覆厚度超过
Figure BDA0002597695200000107
范围的比较例2至比较例6中，图案不完全地形成，或无法形成图案。
而且，最大可涂覆厚度必需考虑图案的尺寸，完整地形成涂覆厚度在
Figure BDA0002597695200000108
范围内，宽度200μm、深度1.2μm的硅图案，优选地，以涂覆厚度在
Figure BDA0002597695200000109
范围较低(较薄)地涂覆，这在工艺方面是具有稳定性的更优秀的，而在费用方面也被认为更经济。

Claims (8)

1.一种形成硅或硅化合物图案的方法，在半导体制造工艺中的硅或硅化合物层的蚀刻工艺中，包括：
i)在蚀刻对象物依次层叠有机膜和无机膜，涂覆用于形成图案的光刻胶后，经过曝光与显影而形成光刻胶图案的步骤；
ii)利用上述步骤中形成的光刻胶图案，用能进行蚀刻的气体实施干式蚀刻而剩留蚀刻对象物紧接着的上面的有机碳膜的步骤；
iii)在剩留的有机碳膜图案上涂覆耐氟酸性物质的步骤；及
iv)用含有氟酸的水溶液进行湿式蚀刻的步骤。
2.根据权利要求1所述的形成硅或硅化合物图案的方法，其特征在于，
在蚀刻对象物层叠有机膜和无机膜的方法为进行涂覆或者以化学或物理方式沉积的方法。
3.根据权利要求2所述的形成硅或硅化合物图案的方法，其特征在于，
层叠于蚀刻对象物的有机碳膜的含碳量为30％至100％。
4.根据权利要求1所述的形成硅或硅化合物图案的方法，其特征在于，
用于形成图案的光源具有13.5nm、198nm、248nm、365nm波长且包括电子束。
5.根据权利要求1所述的形成硅或硅化合物图案的方法，其特征在于，
在形成图案后能够用于干式蚀刻的气体，单独或混合使用以氩气、氮气为首的非活性气体；由包含1个以上氟元素的分子构成的气体；氧气。
6.根据权利要求1所述的形成硅或硅化合物图案的方法，其特征在于，
耐氟酸性物质作为能够选择性地涂覆于有机碳膜的物质，单独或混合使用聚酰亚胺、聚乙烯、聚丙烯、聚二乙烯、聚氯乙烯、聚咪唑、聚碳酸酯、聚苯乙烯、聚对苯二甲酸乙二醇酯、聚对苯二甲酸丁二醇酯、聚苯醚、聚偏二氟乙烯。
7.根据权利要求6所述的形成硅或硅化合物图案的方法，其特征在于，
耐氟酸性物质的涂覆厚度为
Figure FDA0002597695190000011
至
Figure FDA0002597695190000012
8.根据权利要求7所述的形成硅或硅化合物图案的方法，其特征在于，
耐氟酸性物质的涂覆厚度为
Figure FDA0002597695190000013
至
Figure FDA0002597695190000014
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