CN111630126A - 粘接剂组合物、膜状粘接剂、粘接片材及半导体装置的制造方法 - Google Patents
粘接剂组合物、膜状粘接剂、粘接片材及半导体装置的制造方法 Download PDFInfo
- Publication number
- CN111630126A CN111630126A CN201880087334.3A CN201880087334A CN111630126A CN 111630126 A CN111630126 A CN 111630126A CN 201880087334 A CN201880087334 A CN 201880087334A CN 111630126 A CN111630126 A CN 111630126A
- Authority
- CN
- China
- Prior art keywords
- adhesive
- film
- component
- adhesive composition
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000853 adhesive Substances 0.000 title claims abstract description 187
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 187
- 239000004065 semiconductor Substances 0.000 title claims abstract description 119
- 239000000203 mixture Substances 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000003822 epoxy resin Substances 0.000 claims abstract description 54
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 54
- 125000002723 alicyclic group Chemical group 0.000 claims abstract description 22
- 229920005989 resin Polymers 0.000 claims abstract description 22
- 239000011347 resin Substances 0.000 claims abstract description 22
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 19
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 12
- 229920001971 elastomer Polymers 0.000 claims abstract description 10
- 239000000806 elastomer Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 31
- 239000005011 phenolic resin Substances 0.000 claims description 19
- 229920000178 Acrylic resin Polymers 0.000 claims description 15
- 239000004925 Acrylic resin Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 12
- 125000003118 aryl group Chemical group 0.000 claims description 10
- 238000010030 laminating Methods 0.000 claims description 10
- 229920001568 phenolic resin Polymers 0.000 claims description 9
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 8
- 239000011256 inorganic filler Substances 0.000 claims description 8
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 22
- 238000011156 evaluation Methods 0.000 description 21
- 230000000740 bleeding effect Effects 0.000 description 18
- 239000004593 Epoxy Substances 0.000 description 14
- -1 polycyclic aromatic diglycidyl ether compounds Chemical class 0.000 description 13
- 239000000126 substance Substances 0.000 description 13
- 239000002966 varnish Substances 0.000 description 13
- 150000002430 hydrocarbons Chemical group 0.000 description 11
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 10
- 239000002904 solvent Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 9
- 239000000047 product Substances 0.000 description 9
- 239000000523 sample Substances 0.000 description 9
- 125000003700 epoxy group Chemical group 0.000 description 8
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 229920003986 novolac Polymers 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 125000002947 alkylene group Chemical group 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000002349 favourable effect Effects 0.000 description 5
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 5
- 230000009257 reactivity Effects 0.000 description 5
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- 150000002989 phenols Chemical class 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical group C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- 229920000800 acrylic rubber Polymers 0.000 description 3
- 239000002313 adhesive film Substances 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- 229910002026 crystalline silica Inorganic materials 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- 229920006255 plastic film Polymers 0.000 description 3
- 229920000058 polyacrylate Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- BVYPJEBKDLFIDL-UHFFFAOYSA-N 3-(2-phenylimidazol-1-yl)propanenitrile Chemical compound N#CCCN1C=CN=C1C1=CC=CC=C1 BVYPJEBKDLFIDL-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- 239000000378 calcium silicate Substances 0.000 description 2
- 229910052918 calcium silicate Inorganic materials 0.000 description 2
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 2
- 239000001095 magnesium carbonate Substances 0.000 description 2
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 2
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 2
- 239000000347 magnesium hydroxide Substances 0.000 description 2
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 2
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000391 magnesium silicate Substances 0.000 description 2
- 229910052919 magnesium silicate Inorganic materials 0.000 description 2
- 235000019792 magnesium silicate Nutrition 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 2
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 2
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 2
- 150000004780 naphthols Chemical class 0.000 description 2
- HFPZCAJZSCWRBC-UHFFFAOYSA-N p-cymene Chemical compound CC(C)C1=CC=C(C)C=C1 HFPZCAJZSCWRBC-UHFFFAOYSA-N 0.000 description 2
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 2
- 125000003367 polycyclic group Chemical group 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000306 polymethylpentene Polymers 0.000 description 2
- 239000011116 polymethylpentene Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 2
- 238000002411 thermogravimetry Methods 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- MODAACUAXYPNJH-UHFFFAOYSA-N 1-(methoxymethyl)-4-[4-(methoxymethyl)phenyl]benzene Chemical group C1=CC(COC)=CC=C1C1=CC=C(COC)C=C1 MODAACUAXYPNJH-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- BLBVJHVRECUXKP-UHFFFAOYSA-N 2,3-dimethoxy-1,4-dimethylbenzene Chemical group COC1=C(C)C=CC(C)=C1OC BLBVJHVRECUXKP-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- CQOZJDNCADWEKH-UHFFFAOYSA-N 2-[3,3-bis(2-hydroxyphenyl)propyl]phenol Chemical compound OC1=CC=CC=C1CCC(C=1C(=CC=CC=1)O)C1=CC=CC=C1O CQOZJDNCADWEKH-UHFFFAOYSA-N 0.000 description 1
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- SESYNEDUKZDRJL-UHFFFAOYSA-N 3-(2-methylimidazol-1-yl)propanenitrile Chemical compound CC1=NC=CN1CCC#N SESYNEDUKZDRJL-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- XLYOFNOQVPJJNP-PWCQTSIFSA-N Tritiated water Chemical compound [3H]O[3H] XLYOFNOQVPJJNP-PWCQTSIFSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 125000003172 aldehyde group Chemical group 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000000732 arylene group Chemical group 0.000 description 1
- 238000007611 bar coating method Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- LLEMOWNGBBNAJR-UHFFFAOYSA-N biphenyl-2-ol Chemical compound OC1=CC=CC=C1C1=CC=CC=C1 LLEMOWNGBBNAJR-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229940043232 butyl acetate Drugs 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 150000004292 cyclic ethers Chemical class 0.000 description 1
- 150000001924 cycloalkanes Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229940093499 ethyl acetate Drugs 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 125000001072 heteroaryl group Chemical group 0.000 description 1
- 125000005549 heteroarylene group Chemical group 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- IHHCJKNEVHNNMW-UHFFFAOYSA-N methane;phenol Chemical compound C.OC1=CC=CC=C1 IHHCJKNEVHNNMW-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- 125000002950 monocyclic group Chemical group 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000004957 naphthylene group Chemical group 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000005702 oxyalkylene group Chemical group 0.000 description 1
- 125000004817 pentamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 125000003884 phenylalkyl group Chemical group 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002987 primer (paints) Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 125000005551 pyridylene group Chemical group 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 238000009849 vacuum degassing Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 125000006839 xylylene group Chemical group 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
- C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/08—Macromolecular additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/46—Structure, shape, material or disposition of the wire connectors prior to the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Dicing (AREA)
Abstract
本发明公开一种粘接剂组合物,其含有热固化性树脂、固化剂和弹性体,热固化性树脂包含具有脂环式环的环氧树脂。另外,本发明还公开使用了这种粘接剂组合的膜状粘接剂。进而,本发明提供使用了这种膜状粘接剂的粘接片材及半导体装置的制造方法。
Description
技术领域
本发明涉及粘接剂组合物、膜状粘接剂、粘接片材及半导体装置的制造方法。
背景技术
一直以来,在半导体芯片与半导体芯片搭载用的支撑构件的接合中主要使用银糊料。但是,随着近年的半导体芯片的小型化、集成化,对所使用的支撑构件也变得要求小型化、细密化。另一方面,使用银糊料时,有时会发生因糊料的溢出或半导体芯片的倾斜所导致的引线接合时的不良情况、膜厚控制的困难性、产生空孔等问题。
因此,近年来使用用于接合半导体芯片和支撑构件的膜状粘接剂(例如参照专利文献1)。在使用具备切割带和层叠于切割带上的膜状粘接剂的粘接片材时,通过在半导体晶片的背面粘贴膜状粘接剂,利用切割将半导体晶片制成单片,从而可以获得带有膜状粘接剂的半导体芯片。所得的带有膜状粘接剂的半导体芯片可以介由膜状粘接剂粘贴在支撑构件上,利用热压接而接合。
现有技术文献
专利文献
专利文献1:日本特开2007-053240号公报
发明内容
发明要解决的技术问题
但是,随着半导体芯片的尺寸减小,在热压接时施加于每单位面积的力增大,有时会发生膜状粘接剂从半导体芯片溢出的所谓渗出的现象。
另外,将膜状粘接剂作为导线埋入型膜状粘接剂FOW(Film Over Wire,线包裹膜)或半导体芯片埋入型膜状粘接剂FOD(Film Over Die,芯片包裹膜)使用时,从提高埋入性的观点出发,在热压接时要求高的流动性。因此,具有渗出的发生频率及量进一步增大的倾向。根据情况,有渗出发生至半导体芯片上表面、由此导致电故障或引线接合故障的危险。
本发明鉴于这种实情而作出,其主要目的在于提供在热压接时具有良好的埋入性的同时能够抑制渗出的粘接剂组合物。
用于解决技术问题的手段
本发明的一个方面提供一种粘接剂组合物,其含有热固化性树脂、固化剂和弹性体,热固化性树脂包含具有脂环式环的环氧树脂。根据这种粘接剂组合物,在热压接时具有良好的埋入性的同时能够抑制渗出。
固化剂可以包含酚醛树脂。另外,弹性体可以包含丙烯酸树脂。
热固化性树脂可以进一步包含不具有脂环式环的芳香族环氧树脂。不具有脂环式环的芳香族环氧树脂可以是在25℃下为液体。
粘接剂组合物可以进一步含有无机填充物。另外,粘接剂组合物可以进一步含有固化促进剂。
粘接剂组合物可以用于在半导体装置中、在压接第二半导体元件的同时将第一导线的至少一部分埋入,所述半导体装置为在介由所述第一导线将第一半导体元件引线接合连接于基板上的同时、在所述第一半导体元件上压接所述第二半导体元件而成的。
本发明还涉及含有热固化性树脂、固化剂和弹性体且热固化性树脂包含具有脂环式环的环氧树脂的组合物的作为粘接剂的应用或用于制造粘接剂的应用,所述粘接剂用于在半导体装置中、在压接第二半导体元件的同时将第一导线的至少一部分埋入,所述半导体装置为在介由所述第一导线将第一半导体元件引线接合连接于基板上的同时、在所述第一半导体元件上压接所述第二半导体元件而成的。
另一方面中,本发明提供一种膜状粘接剂,其为将上述粘接剂组合物形成为膜状而成的。
另一方面中,本发明提供一种粘接片材,其具备基材和设置在基材上的上述膜状粘接剂。
基材可以是切割带。此外,本说明书中,有时将基材为切割带的粘接片材称作“切割-芯片接合一体型粘接片材”。
粘接片材可以进一步具备层叠于膜状粘接剂的与基材为相反侧的面上的保护膜。
进而,在另一方面中,本发明提供一种半导体装置的制造方法,其具备以下工序:介由第一导线将第一半导体元件电连接于基板上的引线接合工序;在第二半导体元件的单面上粘贴上述膜状粘接剂的层压工序;以及介由膜状粘接剂将粘贴有膜状粘接剂的第二半导体元件进行压接,从而将第一导线的至少一部分埋入到膜状粘接剂中的芯片接合工序。
此外,半导体装置可以是介由第一导线将第一半导体芯片引线接合连接于半导体基板上、并介由粘接膜将第二半导体芯片压接在第一半导体芯片上,从而将第一导线的至少一部分埋入到粘接膜中而成的导线埋入型半导体装置,还可以是将第一导线及第一半导体芯片埋入到粘接膜中而成的芯片埋入型半导体装置。
发明效果
根据本发明,可以提供在热压接时具有良好的埋入性的同时能够抑制渗出的粘接剂组合物。因此,将该粘接剂组合物形成为膜状而成的膜状粘接剂可用作半导体芯片埋入型膜状粘接剂的FOD(Film Over Die)或导线埋入型膜状粘接剂的FOW(Film Over Wire)。另外,根据本发明,可以提供使用了这种膜状粘接剂的粘接片材及半导体装置的制造方法。
附图说明
图1为表示一个实施方式的膜状粘接剂的示意截面图。
图2为表示一个实施方式的粘接片材的示意截面图。
图3为表示另一实施方式的粘接片材的示意截面图。
图4为表示一个实施方式的半导体装置的示意截面图。
图5为表示一个实施方式的半导体装置的制造方法的一系列工序的示意截面图。
图6为表示一个实施方式的半导体装置的制造方法的一系列工序的示意截面图。
图7为表示一个实施方式的半导体装置的制造方法的一系列工序的示意截面图。
图8为表示一个实施方式的半导体装置的制造方法的一系列工序的示意截面图。
图9为表示一个实施方式的半导体装置的制造方法的一系列工序的示意截面图。
具体实施方式
以下一边适当参照附图一边说明本发明的实施方式。但是,本发明并不限定于以下的实施方式。
本说明书中,(甲基)丙烯酸是指丙烯酸或与其相应的甲基丙烯酸。对于(甲基)丙烯酰基等其它的类似表述也是同样的。
[粘接剂组合物]
本实施方式的粘接剂组合物含有(A)热固化性树脂、(B)固化剂和(C)弹性体。粘接剂组合物是热固化性的,经过半固化(B阶段)状态,在固化处理后可变成完全的固化物(C阶段)状态。
<(A)成分:热固化性树脂>
热固化性树脂从粘接性的观点出发,可以包含环氧树脂。本实施方式的粘接剂组合物包含(A-1)具有脂环式环的环氧树脂作为热固化性树脂。
(A-1)成分是分子内具有脂环式环及环氧基的化合物。环氧基还可以通过单键或连接基(例如亚烷基、氧化烯基等)键合于该化合物的脂环式环或除脂环式环以外的部位。另外,该化合物还可以是具有与构成脂环式环的2个碳原子一起形成的环氧基的化合物(即脂环式环氧化合物)。通过包含(A-1)成分作为热固化性树脂,在热压接时具有良好的埋入性的同时能够抑制渗出。
(A-1)成分的环氧当量并无特别限定,可以是90~600g/eq、100~500g/eq或120~450g/eq。(A-1)成分的环氧当量为这种范围时,具有可获得更良好的反应性及流动性的倾向。
(A-1)成分例如可以是下述通式(1)~(4)所示的环氧树脂中的任一种。
[化学式编号1]
式(1)中,E表示脂环式环、G表示单键或亚烷基、R1各自独立地表示氢原子或一价烃基。n1表示1~10的整数、m表示1~3的整数。
E的碳原子数可以是4~12、5~11或6~10。E可以是单环、也可以是多环,优选是多环、更优选是二环戊二烯环。G中的亚烷基可以是亚甲基、亚乙基、亚丙基、亚丁基、亚戊基等碳数为1~5的亚烷基。G优选是单键。R1的一价烃基例如可以是甲基、乙基、丙基、丁基、戊基等烷基,苯基、萘基等芳基,吡啶基等杂芳基。R1优选是氢原子。
通式(1)所示的环氧树脂可以是下述通式(1a)所示的环氧树脂。
[化学式编号2]
式(1a)中,n1与上述含义相同。
作为通式(1a)所示环氧树脂的市售品,例如可举出HP-7200L、HP-7200H、HP-7200(均为DIC株式会社制)、XD-1000(日本化药株式会社制)等。
[化学式编号3]
式(2)中,R2表示二价烃基。
R2的二价烃基例如可以是亚甲基、亚乙基、亚丙基、亚丁基、亚戊基等亚烷基,亚苯基、亚萘基等亚芳基,亚吡啶基等亚杂芳基。R2优选是碳原子数为1~5的亚烷基。
作为通式(2)所示环氧树脂的市售品,例如可举出Celloxide 2021P、Celloxide2081(均为株式会社Daicel制)等。
[化学式编号4]
式(3)中,R3、R4及R5各自独立地表示二价烃基。
作为R3、R4及R5的二价烃基,可举出与R2的二价烃基中所示例相同者。
作为通式(3)所示环氧树脂的市售品,例如可以举出Syna-Epoxy28(SYANASIA公司制)等。
[化学式编号5]
式(4)中,R6表示氢原子或一价烃基,n2表示1~10的整数。
作为R6的一价烃基,可以举出与R1的一价烃基所示例相同者。
作为通式(4)所示环氧树脂的市售品,例如可举出EHPE3150(株式会社Daicel制)等。
(A-1)成分从耐热性的观点出发,优选通式(1)所示的环氧树脂、更优选通式(1a)所示的环氧树脂。
(A-1)成分的含量以(A)成分总量为基准计,可以为15~100质量%。(A-1)成分的含量可以是40质量%以上、50质量%以上或60质量%以上。
(A-1)成分的含量以粘接剂组合物总量为基准计,可以为5质量%以上、10质量%以上或20质量%以上。(A-1)成分的含量以粘接剂组合物总量为基准计为5质量%以上时,具有在热压接时有更良好的埋入性的同时能够良好地抑制渗出的倾向。
(A)成分除了(A-1)成分之外,还可以进一步包含(A-2)不具有脂环式环的芳香族环氧树脂。这里,不具有脂环式环的芳香族环氧树脂是分子内具有芳香环及环氧基且不具有脂环式环的化合物。作为(A-2)成分,例如可举出双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂、苯酚酚醛清漆型环氧树脂、甲酚酚醛清漆型环氧树脂、双酚A酚醛清漆型环氧树脂、双酚F酚醛清漆型环氧树脂、二苯乙烯型环氧树脂、含三嗪骨架的环氧树脂、含芴骨架的环氧树脂、三酚苯酚甲烷型环氧树脂、联苯基型环氧树脂、亚二甲苯基型环氧树脂、苯基芳烷基型环氧树脂、联苯基芳烷基型环氧树脂、萘型环氧树脂、多官能酚类、蒽等多环芳香族类的二缩水甘油基醚化合物等。这些物质可以单独使用1种或组合使用2种以上。其中,(A-2)成分可以是在25℃下为液体。
(A-2)成分的环氧当量并无特别限定,可以是90~600g/eq、100~500g/eq或120~450g/eq。(A-2)成分的环氧当量为这种范围时,具有可获得更良好的反应性及流动性的倾向。
(A-2)成分的含量以(A)成分总量为基准计,可以为0~85质量%。(A-2)成分的含量可以为60质量%以下、50质量%以下或40质量%以下。
<(B)成分:固化剂>
(B)成分并无特别限定,可以使用作为热固化性树脂的固化剂通常使用的物质。当热固化性树脂包含环氧树脂时,作为(B)成分,例如可举出酚醛树脂、酯化合物、芳香族胺、脂肪族胺、酸酐等。这些物质可以单独使用1种或者组合使用2种以上。其中,从反应性及经时稳定性的观点出发,(B)成分可以包含酚醛树脂。
酚醛树脂只要是分子内具有酚性羟基则可以没有特别限制地使用。作为酚醛树脂,例如可举出在酸性催化剂下使苯酚、甲酚、间苯二酚、邻苯二酚、双酚A、双酚F、苯基苯酚、氨基苯酚等苯酚类及/或α-萘酚、β-萘酚、二羟基萘等萘酚类与甲醛等具有醛基的化合物发生缩合或缩聚而获得的酚醛清漆型酚醛树脂,由烯丙基化双酚A、烯丙基化双酚F、烯丙基化萘二醇、苯酚酚醛清漆、苯酚等苯酚类及/或萘酚类与二甲氧基对二甲苯或双(甲氧基甲基)联苯合成的苯酚芳烷基树脂、萘酚芳烷基树脂、联苯基芳烷基型酚醛树脂、苯基芳烷基型酚醛树脂等。这些物质可以单独使用1种或者组合使用2种以上。其中,从耐热性的观点出发,酚醛树脂优选在85℃、85%RH的恒温恒湿槽中、48小时的条件下、吸水率为2质量%以下,且利用热重量分析计(TGA)测得的350℃下的加热质量减少率(升温速度:5℃/min、环境气体:氮气)小于5质量%。
作为酚醛树脂的市售品,例如可举出Phenolite KA系列、TD系列(DIC株式会社制)、Milex XLC系列、XL系列(三井化学株式会社制)、HE系列(AIR WATER株式会社制)等。
酚醛树脂的羟基当量并无特别限定,可以是80~400g/eq、90~350g/eq或100~300g/eq。酚醛树脂的羟基当量为这种范围时,具有可获得更良好的反应性及流动性的倾向。
(A)成分为环氧树脂、(B)成分为酚醛树脂时的环氧树脂的环氧当量与酚醛树脂的羟基当量之比(环氧树脂的环氧当量/酚醛树脂的羟基当量)从固化性的观点出发,可以为0.30/0.70~0.70/0.30、0.35/0.65~0.65/0.35、0.40/0.60~0.60/0.40或0.45/0.55~0.55/0.45。该当量比为0.30/0.70以上时,具有可获得更充分的固化性的倾向。该当量比为0.70/0.30以下时,可以防止粘度变得过高、可以获得更充分的流动性。
(A)成分及(B)成分的合计含量以粘接剂组合物总量为基准计,可以为30~70质量%。(A)成分及(B)成分的合计含量可以为33质量%以上、36质量%以上或40质量%以上,可以为65质量%以下、60质量%以下或55质量%以下。(A)成分及(B)成分的合计含量以粘接剂组合物总量为基准计为30质量%以上时,具有粘接性提高的倾向。(A)成分及(B)成分的合计含量以粘接剂组合物总量为基准计为70质量%以下时,具有可以防止粘度过于降低、可以进一步抑制渗出的倾向。
<(C)成分:弹性体>
本实施方式的粘接剂组合物含有(C)弹性体。(C)成分优选构成弹性体的聚合物的玻璃化转变温度(Tg)为50℃以下。
作为(C)成分,例如可举出丙烯酸树脂、聚酯树脂、聚酰胺树脂、聚酰亚胺树脂、有机硅树脂、丁二烯树脂、丙烯腈树脂及它们的改性体等。
(C)成分从在溶剂中的溶解性、流动性的观点出发,可以包含丙烯酸树脂。这里,丙烯酸树脂是指含有来源于(甲基)丙烯酸酯的结构单元的聚合物。丙烯酸树脂优选是含有来源于具有环氧基、醇性或酚性羟基、羧基等交联性官能团的(甲基)丙烯酸酯的结构单元作为结构单元的聚合物。另外,丙烯酸树脂还可以是(甲基)丙烯酸酯与丙烯腈的共聚物等丙烯酸橡胶。
丙烯酸树脂的玻璃化转变温度(Tg)可以是-50~50℃或-30~30℃。当丙烯酸树脂的Tg为-50℃以上时,具有可以防止粘接剂组合物的柔软性变得过高的倾向。由此,在晶片切割时变得易于将膜状粘接剂切断,可以防止毛刺的发生。丙烯酸树脂的Tg为50℃以下时,具有可以抑制粘接剂组合物的柔软性降低的倾向。由此,在将膜状粘接剂粘贴在晶片上时,具有易于将空孔充分地埋入的倾向。另外,能够防止因晶片的密合性下降所导致的切割时的碎屑。这里,玻璃化转变温度(Tg)是指使用DSC(热示差扫描热量计)(例如株式会社Rigaku制“Thermo Plus 2”)测得的值。
丙烯酸树脂的重均分子量(Mw)可以是10万~300万或50万~200万。丙烯酸树脂的Mw为这种范围时,能够适当地控制膜形成性、膜状的强度、挠性、粘附性等,并且回流性优异,可以提高埋入性。这里,Mw是指利用凝胶渗透色谱法(GPC)测定、使用由标准聚苯乙烯获得的标准曲线进行换算而得到的值。
作为丙烯酸树脂的市售品,例如可举出SG-70L、SG-708-6、WS-023 EK30、SG-280EK23、HTR-860P-3CSP、HTR-860P-3CSP-3DB(均为Nagasechemtex株式会社制)。
(C)成分的含量相对于(A)成分及(B)成分的总量100质量份,可以为20~200质量份或30~100质量份。(C)成分的含量相对于(A)成分及(B)成分的总量100质量份为20质量份以上时,具有膜状粘接剂的处理性(例如弯折性等)变得更为良好的倾向。(C)成分的含量相对于(A)成分及(B)成分的总量100质量份为200质量份以下时,具有能够进一步防止粘接剂组合物的柔软性变得过高的倾向。由此,具有在晶片切割时易于将膜状粘接剂切断、能够进一步防止毛刺发生的倾向。
<(D)成分:无机填充物>
本实施方式的粘接剂组合物可以进一步含有(D)无机填充物。作为无机填充物,例如可举出氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、氮化铝、硼酸铝晶须、氮化硼、结晶性二氧化硅、非晶性二氧化硅等。这些物质可以单独使用1种、还可以组合使用2种以上。从所得膜状粘接剂的导热性进一步提高的观点出发,无机填充物可以包含氧化铝、氮化铝、氮化硼、结晶性二氧化硅或非晶性二氧化硅。另外,从调整粘接剂组合物的熔融粘度的观点及对粘接剂组合物赋予触变性的观点出发,无机填充物可以包含氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、结晶性二氧化硅或非晶性二氧化硅。
(D)成分的平均粒径从粘接性进一步提高的观点出发,可以是0.005~0.5μm或0.05~0.3μm。这里,平均粒径是指通过由BET比表面积进行换算所求得的值。
(D)成分从其表面与溶剂、其它成分等的相容性、粘接强度的观点出发,还可以利用表面处理剂进行表面处理。作为表面处理剂,例如可举出硅烷偶联剂等。作为硅烷偶联剂的官能团,例如可举出乙烯基、(甲基)丙烯酰基、环氧基、巯基、氨基、二氨基、烷氧基、环氧基等。
(D)成分的含量相对于(A)成分、(B)成分及(C)成分的总量100质量份,可以是10~90质量份或10~50质量份。(D)成分的含量相对于(A)成分、(B)成分及(C)成分的总量100质量份为10质量份以上时,具有固化前的粘接层的切割性提高、固化后的粘接层的粘接力提高的倾向。(D)成分的含量相对于(A)成分、(B)成分及(C)成分的总量100质量份为90质量份以下时,能够抑制流动性的降低、可以防止固化后的膜状粘接剂的弹性模量变得过高。
<(E)成分:固化促进剂>
本实施方式的粘接剂组合物可以含有(E)固化促进剂。固化促进剂并无特别限定,可以使用通常使用的物质。作为(E)成分,例如可举出咪唑类及其衍生物、有机磷系化合物、仲胺类、叔胺类、季铵盐等。这些物质可以单独使用1种或组合使用2种以上。其中,从反应性的观点出发,(E)成分可以是咪唑类及其衍生物。
作为咪唑类,例如可举出2-甲基咪唑、1-苄基-2-甲基咪唑、1-氰基乙基-2-苯基咪唑、1-氰基乙基-2-甲基咪唑等。这些物质可以单独使用1种或组合使用2种以上。
(E)成分的含量相对于(A)成分、(B)成分及(C)成分的总量100质量份,可以为0.04~3质量份或0.04~0.2质量份。当(E)成分的含量为这种范围时,具有能够兼顾固化性和可靠性的倾向。
<其它成分>
本实施方式的粘接剂组合物可以进一步含有抗氧化剤、硅烷偶联剂、流变控制剂等作为其它成分。这些成分的含量相对于(A)成分、(B)成分及(C)成分的总量100质量份可以为0.02~3质量份。
本实施方式的粘接剂组合物还可以作为用溶剂进行了稀释而得到的粘接剂清漆进行使用。溶剂只要是能够溶解(D)成分以外的成分则无特别限定。作为溶剂,例如可举出甲苯、二甲苯、均三甲基苯、异丙基苯、对伞花烃等芳香族烃;己烷、庚烷等脂肪族烃;甲基环己烷等环状链烷烃;四氢呋喃、1,4-二噁烷等环状醚;丙酮、甲乙酮、甲基异丁基酮、环己酮、4-羟基-4-甲基-2-戊酮等酮;乙酸甲酯、乙酸乙酯、乙酸丁酯、乳酸甲酯、乳酸乙酯、γ-丁内酯等酯;碳酸亚乙酯、碳酸亚丙酯等碳酸酯;N,N-二甲基甲酰胺、N,N-二甲基乙酰胺、N-甲基-2-吡咯烷酮等酰胺等。这些物质可以单独使用1种或组合使用2种以上。其中,从溶解性及沸点的观点出发,溶剂可以是甲苯、二甲苯、甲乙酮、甲基异丁基酮或环己烷。
粘接剂清漆中的固体成分浓度以粘接剂清漆的总质量为基准计可以为10~80质量%。
粘接剂清漆可以通过将(A)成分、(B)成分、(C)成分及溶剂、以及根据需要的(D)成分、(E)成分及其它成分进行混合、混炼来制备。混合及混炼可以将通常的搅拌机、捣碎机、三联辊、球磨机、珠磨机等分散机适当组合来进行。含有(D)成分时,通过预先将(D)成分和低分子量成分混合后再配合高分子量成分,可以缩短进行混合的时间。另外,制备粘接剂清漆之后,还可以通过抽真空等将清漆中的气泡除去。
[膜状粘接剂]
图1为表示一个实施方式的膜状粘接剂的示意截面图。膜状粘接剂10是将上述粘接剂组合物形成为膜状而成的。膜状粘接剂10也可以是半固化(B阶段)状态。这种膜状粘接剂10可以通过将粘接剂组合物涂布在支撑膜上来形成。使用粘接剂清漆时,可以通过将粘接剂清漆涂布在支撑膜上,将溶剂通过加热干燥而除去,从而形成膜状粘接剂10。
作为支撑膜并无特别限定,例如可举出聚四氟乙烯、聚乙烯、聚丙烯、聚甲基戊烯、聚对苯二甲酸乙二醇酯、聚酰亚胺等膜。支撑膜的厚度例如可以为60~200μm或70~170μm。
作为将粘接剂清漆涂布在支撑膜上的方法,可以使用公知的方法,例如可举出刮刀涂布法、辊涂法、喷涂法、凹版涂布法、棒涂法、帘式涂布法等。加热干燥的条件只要是所使用的溶剂充分地挥发的条件,则无特别限定,例如可以是50~200℃下0.1~90分钟。
膜状粘接剂的厚度可以根据用途进行适当调整。膜状粘接剂的厚度从将半导体芯片、导线、基板的布线电路等的凹凸等充分地埋入的观点出发,可以是20~200μm、30~200μm或40~150μm。
[粘接片材]
图2为表示一个实施方式的粘接片材的示意截面图。粘接片材100具备基材20和设置在基材上的上述膜状粘接剂10。
基材20并无特别限定,可以是基材膜。基材膜可以是与上述支撑膜同样的膜。
基材20还可以是切割带。这种粘接片材可以作为切割-芯片接合一体型粘接片材进行使用。此时,由于对半导体晶片的层压工序变为一次,因此作业的高效化是可能的。
作为切割带,例如可举出聚四氟乙烯膜、聚对苯二甲酸乙二醇酯膜、聚乙烯膜、聚丙烯膜、聚甲基戊烯膜、聚酰亚胺膜等塑料膜等。另外,切割带还可以根据需要进行底漆涂布、UV处理、电晕放电处理、研磨处理、刻蚀处理等表面处理。切割带优选具有粘合性。这种切割带可以是对上述塑料膜赋予粘合性者,还可以是在上述塑料膜的单面上设有粘合剂层者。
粘接片材100还可以与形成上述膜状粘接剂的方法同样地通过将粘接剂组合物涂布在基材膜上来形成。将粘接剂组合物涂布在基材20上的方法可以与将上述粘接剂组合物涂布在支撑膜上的方法相同。
粘接片材100还可以使用预先制作的膜状粘接剂来形成。此时,粘接片材100可以通过使用轧辊层压机、真空层压机等在规定条件(例如室温(20℃)或加热状态)下进行层压来形成。粘接片材100可以连续地制造,出于效率良好的原因,优选在加热状态下使用轧辊层压机来进行形成。
膜状粘接剂10的厚度从半导体芯片、导线、基板的布线电路等的凹凸等的埋入性的观点出发,可以是20~200μm、30~200μm或40~150μm。当膜状粘接剂10的厚度为20μm以上时,具有可获得更充分的粘接力的倾向,当膜状粘接剂10的厚度为200μm以下时,是经济的、且能够应对半导体装置的小型化的要求。
图3是表示另一实施方式的粘接片材的示意截面图。粘接片材110进一步具备层叠在膜状粘接剂10的与基材20为相反侧的面上的保护膜30。保护膜30可以与上述支撑膜相同。保护膜的厚度例如可以为15~200μm或70~170μm。
[半导体装置]
图4为表示一个实施方式的半导体装置的示意截面图。半导体装置200是介由第一导线88将第一段的第一半导体元件Wa引线接合连接于基板14、并介由膜状粘接剂10将第二半导体元件Waa压接在第一半导体元件Wa上、从而将第一导线88的至少一部分埋入到膜状粘接剂10中而成的半导体装置。半导体装置可以是第一导线88的至少一部分被埋入而成的导线埋入型的半导体装置,还可以是第一导线88及第一半导体元件Wa被埋入而成的半导体装置。另外,半导体装置200中,进一步介由第二导线98将基板14与第二半导体元件Waa电连接,并利用密封材料42将第二半导体元件Waa密封。
第一半导体元件Wa的厚度可以为10~170μm,第二半导体元件Waa的厚度可以为20~400μm。被埋入到膜状粘接剂10内部的第一半导体元件Wa是用于驱动半导体装置200的控制器芯片。
基板14由在表面上各分别形成有两处的电路图案84、94的有机基板90形成。第一半导体元件Wa介由粘接剂41被压接在电路图案94上。第二半导体元件Waa按照将未被第一半导体元件Wa压接的电路图案94、第一半导体元件Wa及电路图案84的一部分覆盖的方式介由膜状粘接剂10被压接在基板14上。在基板14上的因电路图案84、94所导致的凹凸的高度差中埋入膜状粘接剂10。进而,通过树脂制的密封材料42,将第二半导体元件Waa、电路图案84及第二导线98密封。
[半导体装置的制造方法]
本实施方式的半导体装置的制造方法具备以下工序:介由第一导线将第一半导体元件电连接于基板上的第一引线接合工序;在第二半导体元件的单面上粘贴上述膜状粘接剂的层压工序;以及介由膜状粘接剂将粘贴有膜状粘接剂的第二半导体元件进行压接,从而将第一导线的至少一部分埋入到膜状粘接剂中的芯片接合工序。
图5~9为表示一个实施方式的半导体装置的制造方法的一系列工序的示意截面图。本实施方式的半导体装置200是第一导线88及第一半导体元件Wa被埋入而成的半导体装置,利用以下的顺序制造。首先,如图5所示,在基板14上的电路图案94上压接具有粘接剂41的第一半导体元件Wa,介由第一导线88将基板14上的电路图案84与第一半导体元件Wa电接合连接(第一引线接合工序)。
接着,在半导体晶片(例如厚度为100μm、尺寸:8英寸)的单面上层压粘接片材100,将基材20剥离,从而在半导体晶片的单面上粘贴膜状粘接剂10(例如厚度为110μm)。进而,在膜状粘接剂10上粘贴切割带之后,切割成规定的大小(例如7.5mm见方),从而获得图6所示的粘贴有膜状粘接剂10的第二半导体元件Waa(层压工序)。
层压工序的温度条件可以为50~100℃或60~80℃。层压工序的温度为50℃以上时,可以获得与半导体晶片良好的密合性。层压工序的温度为100℃以下时,由于可抑制层压工序中膜状粘接剂10过度地流动,因此可以防止引起厚度的变化等。
作为切割方法,例如可举出使用旋转刀的刀片切割、通过激光将膜状粘接剂切断或将晶片和膜状粘接剂两者切断的方法等。
进而,将粘贴有膜状粘接剂10的第二半导体元件Waa压接在介由第一导线88接合连接有第一半导体元件Wa的基板14上。具体地说,如图7所示,通过将粘贴有膜状粘接剂10的第二半导体元件Waa按照膜状粘接剂10覆盖第一导线88及第一半导体元件Wa的方式来载置,接着如图8所示,通过将第二半导体元件Waa压接在基板14上,从而在基板14上固定第二半导体元件Waa(芯片接合工序)。芯片接合工序优选在80~180℃、0.01~0.50MPa的条件下将膜状粘接剂10压接0.5~3.0秒钟。在芯片接合工序之后,在60~175℃、0.3~0.7MPa的条件下将膜状粘接剂10加压及加热5分钟以上。
接着,如图9所示,介由第二导线98将基板14与第二半导体元件Waa电连接后(第二引线接合工序),利用密封材料42将电路图案84、第二导线98及第二半导体元件Waa密封。经过这种工序,可以制造半导体装置200。
作为其它的实施方式,半导体装置还可以是第一导线88的至少一部分被埋入而成的导线埋入型的半导体装置。
实施例
以下举出实施例更为具体地说明本发明。但是,本发明并不限定于这些实施例。
(实施例1~8及比较例1~4)
<粘接片材的制作>
按表1及表2所示的配合比例(质量份)将以下所示的各成分混合,使用环己酮作为溶剂,制备固体成分为40质量%的粘接剂组合物的清漆。接着,利用100目的过滤器将所得清漆进行过滤,进行真空脱泡。将真空脱泡后的清漆涂布在作为基材膜的厚度为38μm的实施了脱模处理的聚对苯二甲酸乙二醇酯(PET)膜上。将涂布后的清漆以90℃下5分钟、接着140℃下5分钟的两阶段进行加热干燥。如此,获得在基材膜上具备处于半固化(B阶段)状态的厚度为110μm的膜状粘接剂的粘接片材。
此外,表1及表2中的各成分如下。
(A)热固化性树脂
(A-1)具有脂环式环的环氧树脂
A-1-1:通式(1a)所示的环氧树脂(具有二环戊二烯结构的环氧树脂)、DIC株式会社制、商品名:HP-7200L、环氧当量:250~280g/eq
A-1-2:通式(1a)所示的环氧树脂(具有二环戊二烯结构的环氧树脂)、日本化药株式会社制、商品名:XD-1000、环氧当量:254g/eq
A-1-3:通式(2)所示的环氧树脂(25℃下为液体)、株式会社Daicel制、商品名:Celloxide 2021P、环氧当量:128~145g/eq
A-1-4:通式(4)所示的环氧树脂、株式会社Daicel制、商品名:EHPE3150、环氧当量:170~190g/eq
(A-2)不具有脂环式环的芳香族环氧树脂
A-2-1:多官能芳香族环氧树脂、株式会社Printec制、商品名:VG3101L、环氧当量:210g/eq
A-2-2:甲酚酚醛清漆型环氧树脂、新日铁住金化学株式会社制、商品名:YDCN-700-10、环氧当量:209g/eq
A-2-3:双酚F型环氧树脂(25℃下为液体)、DIC株式会社制、商品名:EXA-830CRP、环氧当量:159g/eq
(B)固化剂
B-1:双酚A酚醛清漆型酚醛树脂、DIC株式会社制、商品名:LF-4871、羟基当量:118g/eq
B-2:苯基芳烷基型酚醛树脂、三井化学株式会社制、商品名:XLC-LL、羟基当量:175g/eq
B-3:苯基芳烷基型酚醛树脂、AIR WATER株式会社制、商品名:HE100C-30、羟基当量:170g/eq
(C)弹性体
C-1:含环氧基丙烯酸树脂(丙烯酸橡胶)、Nagasechemtex株式会社制、商品名:HTR-860P、重均分子量:80万、缩水甘油基官能团单体比率:3%、Tg:-7℃
C-2:丙烯酸树脂(丙烯酸橡胶)、Nagasechemtex株式会社制、商品名:SG-70L、重均分子量:90万、酸值:5mgKOH/g、Tg:-13℃
(D)无机填充物
D-1:二氧化硅填充物分散液、熔融二氧化硅、株式会社Admatechs制、商品名:SC2050-HLG、平均粒径:0.50μ
(E)固化促进剂
E-1:1-氰基乙基-2-苯基咪唑、四国化成工业株式会社制、商品名:Curezol 2PZ-CN
<各种物性的评价>
对所得的粘接片材进行埋入性及渗出量的评价。
[埋入性评价]
制作以下的评价样品对粘接片材的埋入性进行评价。将上述获得的膜状粘接剂(厚度为110μm)剥去基材膜,粘贴在切割带上,获得切割-芯片接合一体型粘接片材。接着,将厚度为100μm的半导体晶片(8英寸)加热至70℃、粘贴在粘接剂一侧。之后,将该半导体晶片切割成7.5mm见方,从而获得半导体芯片A。接着,准备切割-芯片接合一体型粘接片材(日立化成株式会社制、商品名:HR9004-10)(厚度为10μm),加热至70℃,粘贴在厚度为50μm的半导体晶片(8英寸)上。之后,将该半导体晶片切割成4.5mm见方,从而获得带有芯片接合膜的半导体芯片B。接着,准备涂布有阻焊剂(太阳日酸株式会社制、商品名:AUS308)的总厚度为260μm的评价用基板,按照带有芯片接合膜的半导体芯片B的芯片接合膜与评价用基板的阻焊剂相接触的方式,在120℃、0.20MPa、2秒钟的条件下进行压接。之后,按照半导体芯片A的膜状粘接剂与半导体芯片B的半导体晶片相接触的方式,在120℃、0.20MPa、1.5秒钟的条件下进行压接,获得评价样品。此时,按照先压接的半导体芯片B处于半导体芯片A的中央的方式定位。使用超声波数字图像诊断装置(Insight株式会社制、探针:75MHz)对如此获得的评价样品观测有无空孔,当观测到空孔时,算出每单位面积的空孔面积的比例,将这些分析结果作为埋入性进行评价。评价标准如下。将结果示于表1及表2。
A:未观测到空孔。
B:虽然观测到空孔,但其比例小于5面积%。
C:观测到空孔,其比例为5面积%以上。
[渗出量评价]
与在上述埋入性评价中制作的评价样品同样操作,制作渗出量评价的评价样品。使用显微镜,由评价样品的4边的中心测定膜状粘接剂的溢出量,将其最大值作为渗出量。将结果示于表1及表2。
[渗出量评价]
对在上述埋入性评价中为“A”或“B”者,进行渗出量评价。与在上述埋入性评价中制作的评价样品同样地制作渗出量评价的评价样品。使用显微镜,由评价样品的4边的中心测定膜状粘接剂的溢出量,将其最大值作为渗出量。将结果示于表1及表2。
表1
表2
如表1所示,包含具有脂环式环的环氧树脂的实施例1~3与不含其的比较例1~3相比,实现了在维持良好的埋入性的同时抑制渗出。另外,由表2的实施例4~8可知,即便是在使用其它的具有脂环式环的环氧树脂时,也具有相同的倾向。由这些结果确认到,本发明的粘接剂组合物在热压接时具有良好的埋入性的同时能够抑制渗出。
产业上的可利用性
如以上的结果所示,本发明的粘接剂组合物由于热压接时的埋入性良好、能够抑制渗出,因此将粘接剂组合物形成为膜状而成的膜状粘接剂可用作芯片埋入型膜状粘接剂FOD(Film Over Die)或导线埋入型膜状粘接剂FOW(Film Over Wire)。
符号说明
10膜状粘接剂、14基板、20基材、30保护膜、41粘接剂、42密封材料、84、94电路图案、88第一导线、90有机基板、98第二导线、100、110粘接片材、200半导体装置、Wa第一半导体元件、Waa第二半导体元件。
Claims (12)
1.一种粘接剂组合物,其含有热固化性树脂、固化剂和弹性体,所述热固化性树脂包含具有脂环式环的环氧树脂。
2.根据权利要求1所述的粘接剂组合物,其中,所述固化剂包含酚醛树脂。
3.根据权利要求1或2所述的粘接剂组合物,其中,所述弹性体包含丙烯酸树脂。
4.根据权利要求1~3中任一项所述的粘接剂组合物,其中,所述热固化性树脂进一步包含不具有脂环式环的芳香族环氧树脂。
5.根据权利要求4所述的粘接剂组合物,其中,所述不具有脂环式环的芳香族环氧树脂在25℃下为液体。
6.根据权利要求1~5中任一项所述的粘接剂组合物,其进一步含有无机填充物。
7.根据权利要求1~6中任一项所述的粘接剂组合物,其进一步含有固化促进剂。
8.一种膜状粘接剂,其为将权利要求1~7中任一项所述的粘接剂组合物形成为膜状而成的。
9.一种粘接片材,其具备基材和设置在所述基材上的权利要求8所述的膜状粘接剂。
10.根据权利要求9所述的粘接片材,其中,所述基材为切割带。
11.根据权利要求9或10所述的粘接片材,其进一步具备层叠在所述膜状粘接剂的与所述基材为相反侧的面上的保护膜。
12.一种半导体装置的制造方法,其具备以下工序:
介由第一导线将第一半导体元件电连接于基板上的引线接合工序;
在第二半导体元件的单面上粘贴权利要求8所述的膜状粘接剂的层压工序;以及
介由所述膜状粘接剂将粘贴有所述膜状粘接剂的第二半导体元件进行压接,从而将所述第一导线的至少一部分埋入到所述膜状粘接剂中的芯片接合工序。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2018/003023 WO2019150446A1 (ja) | 2018-01-30 | 2018-01-30 | 接着剤組成物、フィルム状接着剤、接着シート、及び半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111630126A true CN111630126A (zh) | 2020-09-04 |
CN111630126B CN111630126B (zh) | 2023-07-25 |
Family
ID=67478020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201880087334.3A Active CN111630126B (zh) | 2018-01-30 | 2018-01-30 | 粘接剂组合物、膜状粘接剂、粘接片材及半导体装置的制造方法 |
Country Status (6)
Country | Link |
---|---|
JP (2) | JP7176536B2 (zh) |
KR (2) | KR102444486B1 (zh) |
CN (1) | CN111630126B (zh) |
SG (1) | SG11202006826WA (zh) |
TW (1) | TWI804569B (zh) |
WO (1) | WO2019150446A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7327416B2 (ja) * | 2019-01-28 | 2023-08-16 | 株式会社レゾナック | 接着剤組成物、フィルム状接着剤、接着シート、及び半導体装置の製造方法 |
WO2024070897A1 (ja) * | 2022-09-29 | 2024-04-04 | 積水ポリマテック株式会社 | 組成物、皮膜、回路シート及びセンサシート |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101016402A (zh) * | 2003-01-07 | 2007-08-15 | 积水化学工业株式会社 | 固化性树脂组合物、粘接性环氧树脂膏、粘接性环氧树脂薄片、导电连接膏、导电连接薄片和电子器件接合体 |
CN102598235A (zh) * | 2009-09-30 | 2012-07-18 | 积水化学工业株式会社 | 半导体接合用粘接剂、半导体接合用粘接膜、半导体芯片的安装方法及半导体装置 |
JP2012214526A (ja) * | 2011-03-28 | 2012-11-08 | Hitachi Chemical Co Ltd | フィルム状接着剤、接着シート及び半導体装置 |
CN102834907A (zh) * | 2010-04-13 | 2012-12-19 | 积水化学工业株式会社 | 半导体芯片接合用粘接材料、半导体芯片接合用粘接膜、半导体装置的制造方法及半导体装置 |
JP2014175459A (ja) * | 2013-03-08 | 2014-09-22 | Hitachi Chemical Co Ltd | 半導体装置及び半導体装置の製造方法 |
CN104170070A (zh) * | 2012-08-06 | 2014-11-26 | 积水化学工业株式会社 | 半导体装置的制造方法及倒装片安装用粘接剂 |
CN105027273A (zh) * | 2013-03-07 | 2015-11-04 | 住友电木株式会社 | 粘接膜、切割膜片一体型粘接膜、背磨胶带一体型粘接膜、背磨胶带兼切割膜片一体型粘接膜、叠层体、叠层体的固化物、和半导体装置及半导体装置的制造方法 |
CN105308730A (zh) * | 2013-08-22 | 2016-02-03 | 积水化学工业株式会社 | 半导体用粘接剂 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4668001B2 (ja) | 2005-08-18 | 2011-04-13 | リンテック株式会社 | ダイシング・ダイボンド兼用シートおよびこれを用いた半導体装置の製造方法 |
JP5157229B2 (ja) * | 2006-04-11 | 2013-03-06 | 日立化成株式会社 | 接着シート |
TWI564361B (zh) * | 2009-10-16 | 2017-01-01 | Lg化學股份有限公司 | 晶粒接附膜 |
JP5834662B2 (ja) * | 2011-09-13 | 2015-12-24 | 日立化成株式会社 | フィルム状接着剤、接着シート、半導体装置及びその製造方法 |
KR101850592B1 (ko) * | 2013-01-23 | 2018-04-19 | 헨켈 아이피 앤드 홀딩 게엠베하 | 언더필 조성물 및 이를 사용하는 패키징 방법 |
JP6223155B2 (ja) | 2013-11-29 | 2017-11-01 | サムスン エスディアイ カンパニー, リミテッドSamsung Sdi Co., Ltd. | 接着剤層用塗布組成物、半導体用接着フィルムおよびその製造方法、ならびに、これを用いた半導体装置の製造方法 |
JP6364187B2 (ja) * | 2013-12-19 | 2018-07-25 | 新日鉄住金化学株式会社 | 光学用エポキシ樹脂組成物およびその硬化物 |
JP2015122425A (ja) * | 2013-12-24 | 2015-07-02 | 日東電工株式会社 | 半導体装置の製造方法、半導体装置、包埋用接着フィルム、及びダイシング・ダイボンドフィルム |
JP6310748B2 (ja) | 2014-03-31 | 2018-04-11 | 日東電工株式会社 | ダイボンドフィルム、ダイシングシート付きダイボンドフィルム、半導体装置、及び、半導体装置の製造方法 |
JP6274306B2 (ja) * | 2014-03-31 | 2018-02-07 | 荒川化学工業株式会社 | プリント配線板用接着剤組成物、積層板およびフレキシブルプリント配線板 |
JP6603479B2 (ja) * | 2015-05-18 | 2019-11-06 | 日東電工株式会社 | 接着フィルム、ダイシングテープ一体型接着フィルム、複層フィルム、半導体装置の製造方法および半導体装置 |
WO2016194952A1 (ja) * | 2015-06-02 | 2016-12-08 | デクセリアルズ株式会社 | 接着剤組成物 |
-
2018
- 2018-01-30 SG SG11202006826WA patent/SG11202006826WA/en unknown
- 2018-01-30 JP JP2019568439A patent/JP7176536B2/ja active Active
- 2018-01-30 WO PCT/JP2018/003023 patent/WO2019150446A1/ja active Application Filing
- 2018-01-30 KR KR1020207022893A patent/KR102444486B1/ko active IP Right Grant
- 2018-01-30 CN CN201880087334.3A patent/CN111630126B/zh active Active
- 2018-01-30 KR KR1020227031592A patent/KR102553619B1/ko active IP Right Grant
-
2019
- 2019-01-28 TW TW108103150A patent/TWI804569B/zh active
-
2022
- 2022-11-09 JP JP2022179719A patent/JP7472954B2/ja active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101016402A (zh) * | 2003-01-07 | 2007-08-15 | 积水化学工业株式会社 | 固化性树脂组合物、粘接性环氧树脂膏、粘接性环氧树脂薄片、导电连接膏、导电连接薄片和电子器件接合体 |
CN102598235A (zh) * | 2009-09-30 | 2012-07-18 | 积水化学工业株式会社 | 半导体接合用粘接剂、半导体接合用粘接膜、半导体芯片的安装方法及半导体装置 |
CN102834907A (zh) * | 2010-04-13 | 2012-12-19 | 积水化学工业株式会社 | 半导体芯片接合用粘接材料、半导体芯片接合用粘接膜、半导体装置的制造方法及半导体装置 |
JP2012214526A (ja) * | 2011-03-28 | 2012-11-08 | Hitachi Chemical Co Ltd | フィルム状接着剤、接着シート及び半導体装置 |
CN104170070A (zh) * | 2012-08-06 | 2014-11-26 | 积水化学工业株式会社 | 半导体装置的制造方法及倒装片安装用粘接剂 |
CN105027273A (zh) * | 2013-03-07 | 2015-11-04 | 住友电木株式会社 | 粘接膜、切割膜片一体型粘接膜、背磨胶带一体型粘接膜、背磨胶带兼切割膜片一体型粘接膜、叠层体、叠层体的固化物、和半导体装置及半导体装置的制造方法 |
JP2014175459A (ja) * | 2013-03-08 | 2014-09-22 | Hitachi Chemical Co Ltd | 半導体装置及び半導体装置の製造方法 |
CN105308730A (zh) * | 2013-08-22 | 2016-02-03 | 积水化学工业株式会社 | 半导体用粘接剂 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2019150446A1 (ja) | 2021-02-04 |
SG11202006826WA (en) | 2020-08-28 |
CN111630126B (zh) | 2023-07-25 |
KR20220128678A (ko) | 2022-09-21 |
KR102553619B1 (ko) | 2023-07-10 |
KR20200113217A (ko) | 2020-10-06 |
JP7472954B2 (ja) | 2024-04-23 |
TW201936864A (zh) | 2019-09-16 |
KR102444486B1 (ko) | 2022-09-19 |
JP2023017948A (ja) | 2023-02-07 |
WO2019150446A1 (ja) | 2019-08-08 |
TWI804569B (zh) | 2023-06-11 |
JP7176536B2 (ja) | 2022-11-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7327416B2 (ja) | 接着剤組成物、フィルム状接着剤、接着シート、及び半導体装置の製造方法 | |
JP7472954B2 (ja) | 接着剤組成物、フィルム状接着剤、接着シート、及び半導体装置の製造方法 | |
JP7513015B2 (ja) | 接着剤組成物、フィルム状接着剤、接着シート、及び半導体装置の製造方法 | |
KR102482629B1 (ko) | 반도체 장치, 그리고 그 제조에 사용하는 열경화성 수지 조성물 및 다이싱 다이 본딩 일체형 테이프 | |
CN111656500A (zh) | 半导体装置的制造方法及粘接膜 | |
KR102561428B1 (ko) | 열경화성 수지 조성물, 필름형 접착제, 접착 시트 및 반도체 장치의 제조 방법 | |
CN111656499A (zh) | 膜状粘接剂及其制造方法、以及半导体装置及其制造方法 | |
WO2023181397A1 (ja) | 半導体用接着フィルム、ダイシングダイボンディングフィルム、及び、半導体装置を製造する方法 | |
TW202231809A (zh) | 半導體裝置及其製造方法、以及熱固性樹脂組成物、接著膜及切割晶粒接合一體型膜 | |
CN111630641A (zh) | 半导体装置的制造方法及膜状粘接剂 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: Tokyo Applicant after: Lishennoco Co.,Ltd. Address before: Tokyo Applicant before: HITACHI CHEMICAL Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant |