CN111623762B - Annular array type four-mass coupling six-axis micro-inertial sensor and processing method thereof - Google Patents

Annular array type four-mass coupling six-axis micro-inertial sensor and processing method thereof Download PDF

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CN111623762B
CN111623762B CN202010446993.0A CN202010446993A CN111623762B CN 111623762 B CN111623762 B CN 111623762B CN 202010446993 A CN202010446993 A CN 202010446993A CN 111623762 B CN111623762 B CN 111623762B
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axis
frame
mass
photoresist
mass block
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CN111623762A (en
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夏敦柱
李锦辉
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Southeast University
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Southeast University
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5642—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams
    • G01C19/5656—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams the devices involving a micromechanical structure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5642—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams
    • G01C19/5663—Manufacturing; Trimming; Mounting; Housings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C21/00—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00
    • G01C21/10—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by using measurements of speed or acceleration
    • G01C21/12—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by using measurements of speed or acceleration executed aboard the object being navigated; Dead reckoning
    • G01C21/16—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by using measurements of speed or acceleration executed aboard the object being navigated; Dead reckoning by integrating acceleration or speed, i.e. inertial navigation
    • G01C21/18—Stabilised platforms, e.g. by gyroscope
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up

Abstract

The invention discloses an annular array-type four-mass coupling six-axis micro-inertial sensor and a processing method thereof, wherein the sensor sequentially comprises a device structure layer, a metal lead layer and a glass substrate layer from top to bottom, the device structure layer is connected with the glass substrate layer through anchor points, the metal lead layer is positioned between the device structure layer and the glass substrate layer, and anchor points (electrodes) connecting part of the device structure layer and the glass substrate layer are led to the periphery through metal leads; the device structure layer comprises a four-mass three-axis gyroscope structure, a Z-axis torsional pendulum type accelerometer, a capacitive X-axis accelerometer and a capacitive Y-axis accelerometer, and all the structures are sequentially arranged in a center-coincident mode from outside to inside. The three accelerometers and one arrayed common-centroid four-mass triaxial gyroscope have a common centroid, so that data processing is facilitated; the whole annular array-type four-mass coupling six-axis micro-inertial sensor can realize simple array through the connection of the coupling rings, and the accuracy and the redundancy of the system are improved.

Description

Annular array type four-mass coupling six-axis micro-inertial sensor and processing method thereof
Technical Field
The invention relates to a micro-electromechanical sensor technology, in particular to an annular array type four-mass coupling six-axis micro-inertial sensor and a processing method thereof.
Background
Compared with the traditional micro-inertia device, the silicon micro-mechanical inertia device has the advantages of small volume, light weight, low cost, high reliability, low power consumption, batch production and the like, can be widely applied to the fields of aviation, automobiles, medical treatment, photography, electronic consumption and the like, and has wide application prospect. At present, the research and application of the single-axis gyroscope and the single-axis accelerometer are relatively wide, the single-axis gyroscope and the single-axis accelerometer can only sensitively detect one inertia input, and the six-axis micro-inertia device can simultaneously sense angular velocity input in three directions and acceleration input in three directions.
In the research of six-axis micro-inertia devices, three single-axis gyroscopes and three single-axis accelerometers are spliced and processed at the present stage, and the method has large volume and various and complex lead structures. In order to simplify electrode leads, three single-axis gyroscopes are replaced by four-mass gyroscopes with driving coupling in a certain unit, the structural size of the four-mass gyroscopes is only 3.2 multiplied by 3.2 millimeters, but complete decoupling of driving and detecting directions is not achieved, and therefore high performance is difficult to achieve.
Disclosure of Invention
The purpose of the invention is as follows: the invention aims to provide an annular array-type four-mass coupling six-axis micro-inertial sensor which is simple in structure and completely decoupled in each driving and detecting direction.
Another object of the invention is to provide a method for manufacturing said sensor.
The technical scheme is as follows: the six-axis micro inertial sensor of the invention comprises the following components from top to bottom in sequence: the device structure layer is connected with the glass substrate layer B through anchor points A5, the metal lead layer is positioned between the device structure layer and the glass substrate layer, and electrodes connecting part of the device structure layer and the glass substrate layer are led to the periphery through the metal leads; the device structure layer comprises a four-mass triaxial gyroscope structure A1, a Z-axis torsional pendulum type accelerometer A2, a capacitive X-axis accelerometer A3 and a capacitive Y-axis accelerometer A4, and all the structures are sequentially arranged in a center-overlapped mode from outside to inside.
Preferably, the four-mass triaxial gyroscope structure A1 comprises four completely consistent mass blocks A1-a1, A1-a2, A1-A3 and A1-a4 which are distributed up, down, left and right; coupling member A1-c; driving movable comb teeth A1-d; driving fixed comb teeth A1-e; drive electrode A1-f; anchor point a5 and decoupling beam a 6; the coupling part A1-c is of an annular structure, and the mass block A1-a1 and the mass block A1-a2 are positioned on the horizontal central shaft of the coupling part A1-c and are respectively connected with the coupling part A1-c through a decoupling beam A6; the mass blocks A1-A3 and A1-a4 are positioned on the vertical central axis of the coupling component A1-c and are respectively connected with the coupling component A1-c through a decoupling beam A6; the driving electrodes A1-f are respectively arranged at the periphery of the coupling component A1-c and at positions corresponding to the four mass blocks, and the driving electrodes A1-f are connected with the coupling component A1-c through driving comb teeth.
Preferably, the horizontal direction mass blocks A1-a1 and A1-a2 respectively comprise a driving frame A1-b, a heading angle double-degree-of-freedom frame A1-g, a heading angle sensitive frame A1-h, a heading angle detection electrode A1-i, a rolling angle double-degree-of-freedom frame A1-j, a rolling angle sensitive frame A1-k, a rolling angle detection electrode A1-l, a driving movable comb A1-d, a driving fixed comb A1-e, a driving electrode A1-f, a plurality of anchor points A5 and a plurality of decoupling beams A6, the driving frame A1-b is a symmetrical frame structure and comprises a first part and a second part, wherein the heading angle double-of-freedom frame A1-g is arranged in the first part and is connected with the driving frame through the decoupling beams, the heading angle sensitive frame A1-h is arranged inside the heading angle double-degree-of-freedom frame A1-g, the sensor is connected with a course angle double-freedom-degree frame A1-g through a decoupling beam A6, an anchor point A5 is arranged between the course angle double-freedom-degree frame A1-g and a course angle sensitive frame A1-h, the course angle sensitive frame A1-h is connected with the anchor point through a decoupling beam A6, and a course angle detection electrode A1-i is located inside the course angle sensitive frame A1-h and is connected with a course angle sensitive frame A1-h through a detection comb tooth; the roll angle double-degree-of-freedom frame A1-j is arranged in the second part of the driving frame A1-b and is connected with the driving frame through a decoupling beam, the roll angle sensitive frame A1-k is arranged inside the roll angle double-degree-of-freedom frame A1-j and is connected with the roll angle double-degree-of-freedom frame A1-j through a decoupling beam A6, an anchor point A5 is arranged between the roll angle sensitive frame A1-k and the roll angle double-degree-of-freedom frame A1-j, and the roll angle sensitive frame A1-k is connected with the anchor point through a decoupling beam A6; the roll angle detection electrode A1-l is located below or inside the roll angle sensitive frame A1-k, when the roll angle detection electrode A1-l is located below the roll angle sensitive frame A1-k, the roll angle detection electrode A1-l is of a metal flat plate structure, and at the moment, the metal flat plate structure and the roll angle sensitive frame A1-k form a capacitor, so that the deposited metal electrode flat plate detects a Z-axis out-of-plane motion mode; when the roll angle detection electrode A1-l is located inside the roll angle sensitive frame A1-k, the roll angle detection electrode A1-l is connected with the roll angle sensitive frame A1-k through dynamic and static high-low comb teeth to detect the out-of-plane motion of a Z axis for the dynamic and static high-low comb teeth, the driving frame A1-b is connected with the anchor point A5 through a decoupling beam, one side of the driving frame A1-b is connected with the coupling part through the decoupling beam, and the other side of the driving frame A1-f is connected with the driving comb teeth.
Preferably, the structure of the vertical direction mass block A1-A3 or A1-a4 rotates 90 degrees, namely the structure is the same as that of the horizontal direction mass block A1-a1 or A1-a2, and the roll angle double-degree-of-freedom frame A1-j, the roll angle sensitive frame A1-k and the roll angle detection electrode A1-l which are used for detecting the roll angle in the horizontal direction mass block A1-a1 or A1-a2 are used for detecting the pitch angle in the vertical direction mass block A1-A3 or A1-a4 and are named as a pitch angle double-degree-of-freedom frame A1-m, a pitch angle sensitive frame A1-n and a pitch angle detection electrode A1-o.
Preferably, the Z-axis torsional pendulum accelerometer comprises a Z-axis torsional pendulum mass A2-a, a Z-axis detection electrode A2-b, an anchor point A5 and a plurality of decoupling beams A6, wherein a central frame of the Z-axis torsional pendulum mass A2-a is arranged at the center of a four-mass three-axis gyroscope structure A1, and the four fan-shaped structures of the Z-axis torsional mass block A2-a are respectively arranged in four fan-shaped areas formed among the four mass blocks, the central frame of the Z-axis torsional mass block A2-a is connected with an anchor point A5 through a decoupling beam A6, a Z-axis detection electrode A2-b is a metal flat plate positioned below the four fan-shaped structures of the Z-axis torsional mass block A2-a when the deposited metal flat plate capacitance detection surface moves, and the moving and static comb-type detection surface moves outside and is positioned at the edges of the four fan-shaped structures of the Z-axis torsional mass block A2-a, is connected with four fan-shaped structures of a Z-axis torsional mass block A2-a through dynamic and static high-low comb teeth.
Preferably, the capacitive X-axis accelerometer comprises an X-axis mass block A3-a, an X-axis detection electrode A3-b, an anchor point A5 and a plurality of decoupling beams A6, two sides of the X-axis mass block A3-a are respectively connected with the anchor point A5 through the decoupling beams A6, two X-axis detection electrodes A3-b are arranged on two sides of the X-axis mass block A3-a, the X-axis detection electrodes A3-b are connected with two sides of the X-axis mass block A3-a through comb teeth, and the capacitive X-axis accelerometer is located inside the capacitive Y-axis accelerometer and the centers of the capacitive X-axis accelerometer are overlapped.
Preferably, the capacitive Y-axis accelerometer comprises a Y-axis mass block A4-a, two Y-axis detection electrodes A4-b, anchor points A5 and a plurality of decoupling beams A6, the two Y-axis detection electrodes A4-b are arranged on two sides of the interior of the Y-axis mass block A4-a and are connected with two side edges of the Y-axis mass block A4-a through comb teeth, the other two sides of the interior of the Y-axis mass block A4-a are respectively provided with anchor points and are connected with the anchor points through the decoupling beams, and the capacitive Y-axis accelerometer is located inside a central frame of the Z-axis torsional mass block A2-a and the centers of the capacitive Y-axis accelerometer coincide.
The invention discloses a processing method for detecting Z-axis out-of-plane motion of a deposited metal electrode flat plate by a six-axis micro inertial sensor, which comprises the following steps:
(a) taking a silicon wafer, polishing the surface of the silicon wafer and simultaneously utilizing H2SO4And H2O2Cleaning the mixed solution;
(b) uniformly coating photoresist on the surface of a silicon wafer, photoetching and developing by using a first mask plate, and obtaining the photoresist with anchor point patterns on the surface of the silicon wafer;
(c) performing RIE dry etching on the silicon wafer by using the photoresist as a mask, transferring the anchor point pattern to the surface of the silicon wafer, and washing off the photoresist as the mask;
(d) another glass sheet is taken and utilized H2SO4And H2O2Cleaning the mixed solution;
(e) uniformly coating photoresist on the glass sheet, photoetching and developing by using a second mask, obtaining the photoresist with metal electrode and lead wire patterns on the surface of the glass sheet, sputtering a Cr/Au alloy layer, and obtaining the photoresist with the metal electrode and the lead wire on the surface of the glass sheet by using a Lift-off stripping process;
(f) carrying out anodic bonding on the processed silicon wafer and the glass sheet to obtain a bonded sample wafer;
(g) uniformly coating photoresist on the surface of the obtained sample, and photoetching and developing by using a third mask plate to obtain the photoresist with a structural pattern on the surface of the sample;
(h) and (4) performing RIE etching on the sample wafer by using the photoresist as a mask to process a silicon structure to obtain a final device.
The invention discloses a processing method of a six-axis micro inertial sensor for detecting the movement outside a Z-axis surface at dynamic and static high and low comb teeth, which comprises the following steps:
(a) taking an SOI wafer, and using H2SO4And H2O2Cleaning the mixed solution;
(b) depositing a layer of silicon oxide on the surface of the SOI wafer by using an LPCVD (low pressure chemical vapor deposition) process;
(c) uniformly coating a layer of photoresist on the surface of the SOI wafer, and photoetching and developing by using a fourth mask plate to obtain a layer of photoresist with static comb tooth patterns with different heights on the surface of the SOI wafer; etching SiO2 on the surface of the SOI wafer by using photoresist as a mask to obtain silicon oxide with static comb tooth patterns with different heights; washing off the surface photoresist;
(d) uniformly coating a layer of photoresist on the surface of the SOI wafer, photoetching and developing by using a fifth mask plate, and obtaining a layer of photoresist with anchor point patterns on the surface of the SOI wafer;
(e) etching the SOI wafer by using the RIE (reactive ion etching) process by using the photoresist and the silicon oxide as masks to obtain silicon anchor points and unequal-height static teeth;
(f) taking a silicon wafer, polishing the surface of the silicon wafer and simultaneously utilizing H2SO4And H2O2Cleaning the mixed solution;
(g) uniformly coating photoresist on the surface of the silicon wafer, and carrying out photoetching and development by using a sixth mask plate to obtain the photoresist with anchor point patterns on the surface of the silicon wafer;
(h) performing RIE dry etching on the silicon wafer by using the photoresist as a mask, transferring the anchor point pattern to the surface of the silicon wafer, and washing off the photoresist as the mask;
(i) another glass sheet is taken and utilized H2SO4And H2O2Cleaning the mixed solution;
(j) uniformly coating photoresist on the glass sheet, photoetching and developing by using a seventh mask, obtaining the photoresist with metal electrode and lead wire patterns on the surface of the glass sheet, sputtering a Cr/Au alloy layer, and obtaining the photoresist with the metal electrode and the lead wire on the surface of the glass sheet by using a Lift-off stripping process;
(k) carrying out anodic bonding on the processed silicon wafer and the glass sheet to obtain a bonded sample wafer;
(l) Uniformly coating photoresist on the surface of the obtained sample wafer, and carrying out photoetching and developing by using a sixth mask plate to obtain the photoresist with structural patterns on the surface of the sample wafer;
(m) RIE etching is carried out on the sample wafer by using the photoresist as a mask to process a silicon structure;
and (n) bonding the processed sample wafer and the SOI wafer to obtain the final device.
According to the monolithically integrated arrayed annular coupling six-axis micro-inertial sensor, a plurality of six-axis micro-inertial sensor arrays are connected through the connection of the coupling parts, two adjacent arrayed four-mass coupling six-axis micro-inertial sensors are in a differential driving mode, the long axis direction of the ellipse shape is vertical, and the polarities of the differential pair electrodes of two adjacent six-axis micro-inertial devices are opposite.
Has the advantages that: compared with the prior art, the sensor has a structure form of a square symmetrical structure, and mainly comprises an array type common-centroid four-mass triaxial gyroscope and three common-centroid symmetrical accelerometers. The designed four-mass triaxial gyroscope comprises four completely consistent mass blocks which are distributed along the upper, lower, left and right sides, a course angle detection module and a rolling angle detection module are arranged in each of the left and right mass blocks, a course angle detection module and a pitching angle detection module are arranged in each of the upper and lower mass blocks, and all the mass blocks transmit driving motion through an external coupling ring to realize differential constant amplitude driving between the relative mass blocks. The three accelerometers with the same mass center symmetry are respectively a torsional pendulum type capacitance accelerometer capable of moving along the out-of-plane direction, an X-axis accelerometer capable of moving along the horizontal direction and a Y-axis accelerometer capable of moving along the vertical direction. Three accelerometers and one arrayed common-centroid four-mass triaxial gyroscope have a common centroid, and data processing is facilitated. The whole annular array-type four-mass coupling six-axis micro-inertial sensor can realize simple array through the connection of the coupling rings, and the accuracy and the redundancy of the system are improved.
Drawings
FIG. 1 is a schematic diagram of the sensor structure of the present invention;
FIG. 2 is a cross-sectional view of a sensor of the present invention;
FIG. 3 is a schematic structural diagram of a structural layer of a sensor device of the present invention;
FIG. 4 is a diagram of an array-able common-centroid four-mass tri-axial gyroscope of a device structure layer;
FIG. 5 is a diagram of the horizontal mass block of the arrayable common-centroid four-mass triaxial gyroscope;
FIG. 6 is a diagram of the vertical mass block of the arrayed common-centroid four-mass tri-axial gyroscope;
FIG. 7 is a schematic diagram of the Z-axis torsional pendulum accelerometer;
FIG. 8 is a schematic diagram of the structure of the X-axis accelerometer;
FIG. 9 is a schematic diagram of the structure of the Y-axis accelerometer;
FIG. 10 is a glass substrate electrode lead diagram;
FIG. 11 is a schematic view of the driving motion in the case of a four-ring array of six-axis micro inertial sensors;
FIG. 12 is a flow chart of a method of processing the six-axis micro inertial sensor based on out-of-plane motion of the electrode plate sensing surface;
FIG. 13 is a flow chart of a processing method of the six-axis micro inertial sensor based on out-of-plane motion of dynamic and static high and low comb detection surfaces.
Detailed Description
The present invention will be described in more detail with reference to the following examples and drawings. It should be noted that, for those skilled in the art, without departing from the principle of the present invention, several improvements and modifications can be made, and these improvements and modifications should also be construed as the protection scope of the present invention. All the components not specified in the present embodiment can be realized by the prior art.
As shown in fig. 1-2, the six-axis micro inertial sensor of the present invention sequentially includes, from top to bottom: the device structure layer is connected with the glass substrate layer B through anchor points A5, the metal lead layer is located between the device structure layer and the glass substrate layer, and electrodes connecting part of the device structure layer and the glass substrate layer are led to the periphery through the metal leads.
As shown in fig. 3, the device structure layer includes a four-mass three-axis gyroscope structure a1, a Z-axis torsional pendulum accelerometer a2, a capacitive X-axis accelerometer A3, and a capacitive Y-axis accelerometer a4, all of which are arranged with their centers coinciding.
As shown in FIG. 4, the four-mass triaxial gyroscope structure A1 comprises four completely uniform mass blocks A1-a1, A1-a2, A1-A3 and A1-a4 which are distributed up, down, left and right; coupling member A1-c; driving movable comb teeth A1-d; driving fixed comb teeth A1-e; drive electrode A1-f; anchor point a5 and decoupling beam a 6; the coupling part A1-c is of an annular structure, and the mass block A1-a1 and the mass block A1-a2 are positioned on the horizontal central shaft of the coupling part A1-c and are respectively connected with the coupling part A1-c through a decoupling beam A6; the mass blocks A1-A3 and A1-a4 are positioned on the vertical central axis of the coupling component A1-c and are respectively connected with the coupling component A1-c through a decoupling beam A6; the driving electrodes A1-f are respectively arranged at the periphery of the coupling component A1-c and at positions corresponding to the four mass blocks, and the driving electrodes A1-f are connected with the coupling component A1-c through driving comb teeth.
As shown in FIG. 5, the horizontal mass block A1-a1 (or A1-a2) comprises a driving frame A1-B, a heading angle two-degree-of-freedom frame A1-g, a heading angle sensitive frame A1-h, a heading angle detection electrode A1-i, a rolling angle two-degree-of-freedom frame A1-j, a rolling angle sensitive frame A1-k, a rolling angle detection electrode A1-l (a metal plate is positioned below the rolling angle sensitive frame A1-k when the deposited metal plate moves out of the detection plane and is connected to a glass substrate B, which is not shown in the figure), a driving movable comb A1-d, a driving fixed comb A1-e, a driving electrode A1-f, a plurality of anchor points A5 and a plurality of decoupling beams A6, wherein the driving frame A1-B is a symmetrical frame structure, and a vertical rod is arranged on a vertical center line to divide the driving frame A1-B into two symmetrical parts, a course angle double-freedom-degree frame A1-g is arranged in the first part and is connected with the driving frame through a decoupling beam, a course angle sensitive frame A1-h is arranged inside the course angle double-freedom-degree frame A1-g and is connected with the course angle double-freedom-degree frame A1-g through a decoupling beam A6, an anchor point A5 is respectively arranged between the course angle double-freedom-degree frame A1-g and the top and the bottom of the course angle sensitive frame A1-h, the course angle sensitive frame A1-h is connected with the upper anchor point and the lower anchor point through a decoupling beam A6, and a course angle detection electrode A1-i is positioned inside the course angle sensitive frame A1-h and is connected with the course angle sensitive frame A1-h through a detection comb teeth; the roll angle double-freedom-degree frame A1-j is arranged in the second part of the driving frame A1-b and is connected with the driving frame through a decoupling beam, the roll angle sensitive frame A1-k is arranged inside the roll angle double-freedom-degree frame A1-j and is connected with the roll angle double-freedom-degree frame A1-j through a decoupling beam A6, an anchor point A5 is respectively arranged between the top and the bottom of the roll angle sensitive frame A1-k and the roll angle double-freedom-degree frame A1-j, and the roll angle sensitive frame A1-k is connected with the upper anchor point and the lower anchor point through a decoupling beam A6; when the deposited metal plate moves out of the detection surface, the metal plate is used, a rolling angle detection electrode A1-l is positioned below a rolling angle sensitive frame A1-k and connected to a glass substrate layer B, and when moving and static high and low comb teeth detect Z-axis out-of-plane movement, a rolling angle detection electrode A1-l is positioned inside the rolling angle sensitive frame A1-k and connected with the rolling angle sensitive frame A1-k through the moving and static high and low comb teeth, which are not shown in the figure; four corners of a driving frame A1-b are respectively connected with an anchor point A5 through decoupling beams, a decoupling beam is arranged on one side and is connected with a coupling part through the decoupling beam, the other side is connected with a driving electrode A1-f through driving comb teeth, driving movable comb teeth A1-d of the driving comb teeth are connected with the driving frame A1-b, driving fixed comb teeth A1-e are connected with the driving electrode, and capacitors are formed between the driving movable comb teeth A1-d and the driving fixed comb teeth A1-e.
As shown in FIG. 6, the structure of the vertical direction mass block A1-A3 (or A1-a4) rotates 90 degrees, namely, the structure of the vertical direction mass block A1-A3 (or A1-a4) is the same as that of the horizontal direction mass block A1-a1 (or A1-a2), the roll angle double-degree-of-freedom frame A1-j, the roll angle sensitive frame A1-k and the roll angle detection electrode A1-l which are used for detecting the roll angle in the horizontal direction mass block A1-a1 (or A1-a2) are used for detecting the pitch angle in the vertical direction mass block A1-A3 (or A1-a4), and the vertical direction mass block A is named as a pitch angle double-a 1-m, a pitch angle sensitive frame A1-n and a pitch angle detection electrode A1-o. The vertical direction mass block A1-A3 (or A1-a4) comprises a driving frame A1-B, a heading angle double-freedom-degree frame A1-g, a heading angle sensitive frame A1-h, a heading angle detection electrode A1-i, a pitching angle double-freedom-degree frame A1-m, a pitching angle sensitive frame A1-n, a pitching angle detection electrode A1-o (a metal flat plate is positioned below the pitching angle sensitive frame A1-n when the deposited metal flat plate detects out-of-plane motion and is connected to a glass substrate B, which is not shown in the figure), a driving movable comb A1-d, a driving fixed comb A1-e, a driving electrode A1-f, a plurality of anchor points A5 and a plurality of decoupling beams A6, wherein the driving frame A1-B is a symmetrical frame structure and comprises two parts, the heading angle double-freedom-degree frame A1-g is arranged in the first part, the heading angle sensitive frame A1-h is arranged inside a heading angle double-freedom-degree frame A1-g and is connected with the heading angle double-freedom-degree frame A1-g through a decoupling beam A6, an anchor point A5 is respectively arranged between the heading angle double-freedom-degree frame A1-g and two side edges of the heading angle sensitive frame A1-h, the heading angle sensitive frame A1-h is connected with the left anchor point and the right anchor point through a decoupling beam A6, and a heading angle detection electrode A1-i is positioned inside the heading angle sensitive frame A1-h and is connected with the heading angle sensitive frame A1-h through comb teeth; the pitch angle double-freedom-degree frame A1-m is arranged in the second part of the driving frame A1-b and is connected with the driving frame through a decoupling beam, the pitch angle sensitive frame A1-n is arranged inside the pitch angle double-freedom-degree frame A1-m and is connected with the pitch angle double-freedom-degree frame A1-m through a decoupling beam A6, an anchor point A5 is respectively arranged between the pitch angle sensitive frame A1-n and two side edges of the pitch angle double-freedom-degree frame A1-m, and the pitch angle sensitive frame A1-n is connected with the left anchor point and the right anchor point through a decoupling beam A6; when the deposited metal flat plate moves out of the detection plane, the metal flat plate is used as the metal flat plate, the pitch angle detection electrode A1-o is positioned below the pitch angle sensitive frame A1-n and connected to the glass substrate B, and when the dynamic and static high-low comb teeth detect the Z-axis out-of-plane movement, the pitch angle detection electrode A1-o is positioned inside the pitch angle sensitive frame A1-n and connected with the pitch angle sensitive frame A1-n through the dynamic and static high-low comb teeth, which is not shown in the figure; four corners of a driving frame A1-b are respectively connected with an anchor point A5 through decoupling beams, a decoupling beam is arranged on one side and is connected with a coupling part through the decoupling beam, the other side is connected with a driving electrode A1-f through driving comb teeth, driving movable comb teeth A1-d of the driving comb teeth are connected with the driving frame A1-b, driving fixed comb teeth A1-e are connected with the driving electrode, and capacitors are formed between the driving movable comb teeth A1-d and the driving fixed comb teeth A1-e.
As shown in fig. 7, the Z-axis torsional pendulum accelerometer includes a Z-axis torsional pendulum mass a2-a, a Z-axis sensing electrode a2-B (a metal plate when the deposited metal plate moves out of the sensing plane, located under the Z-axis torsional pendulum mass a2-a, connected to a glass substrate B, not shown in the figure), an anchor point a5 and a plurality of decoupling beams A6. as shown in fig. 3, the central frame of the Z-axis torsional pendulum mass a2-a is disposed at the center of the four-mass triaxial gyroscope structure a1, and the four fan-shaped structures of the Z-axis torsional pendulum mass a2-a are respectively disposed in four fan-shaped areas formed between the four masses, the central frame of the Z-axis torsional pendulum mass a2-a is connected to the anchor point a5 for fixation through the decoupling beam A6, the Z-axis sensing electrode a2-B is a metal plate located under the four fan-shaped structures of the Z-axis torsional pendulum mass a2-a when the deposited metal plate moves out of the capacitive sensing plane, the dynamic and static high and low comb teeth type detection surface is positioned at the edges of four fan-shaped structures of the Z-axis torsional pendulum mass block A2-a during the out-of-plane movement and is connected with the four fan-shaped structures of the Z-axis torsional pendulum mass block A2-a through the dynamic and static high and low comb teeth.
As shown in FIG. 8, the capacitive X-axis accelerometer comprises an X-axis mass block A3-a, an X-axis detection electrode A3-b, an anchor point A5 and a plurality of decoupling beams A6, wherein two sides of the X-axis mass block A3-a are respectively connected with an anchor point A5 through decoupling beams A6, two X-axis detection electrodes A3-b are arranged on two sides of the interior of the X-axis mass block A3-a, and the X-axis detection electrodes A3-b are connected with two sides of the X-axis mass block A3-a through comb teeth. As shown in fig. 3, the capacitive X-axis accelerometer is located inside the capacitive Y-axis accelerometer.
As shown in fig. 9, the capacitive Y-axis accelerometer includes two Y-axis mass blocks a4-a, two Y-axis detection electrodes a4-b, two anchor points a5, and a plurality of decoupling beams a6, wherein the two Y-axis detection electrodes a4-b are disposed on two sides of the inside of the Y-axis mass block a4-a and connected to two sides of the Y-axis mass block a4-a through comb teeth, and the other two anchors are disposed on two other sides of the inside of the Y-axis mass block a4-a and connected to the anchor points through the decoupling beams. As shown in FIG. 3, the capacitive Y-axis accelerometer is located inside the center frame of the Z-axis torsional mass A2-a.
For a rolling angle sensitive detection frame A1-k, a pitching angle sensitive detection frame A1-n and a Z-axis torsional mass block A2-a, the rolling angle sensitive detection frame A, the pitching angle sensitive detection frame A1-n and the Z-axis torsional mass block A are in out-of-plane motion along the Z axis in a working state, and the out-of-plane motion detection mode can be divided into a dynamic and static high and low comb-tooth type detection mode and a deposited metal flat plate capacitance type detection mode.
Fig. 10 is a diagram of electrode leads on a glass substrate with upper reference six axis micro-inertial device positions in light gray. The metal film is deposited on the glass substrate to serve as a lead, the structural electrode is led out from a bonding anchor point A5 and is connected to the position of a bonding pad through the metal lead, and the electrode comprises a differential gyroscope driving electrode, a differential gyroscope driving detection electrode, a differential course angle detection electrode, a differential rolling angle detection electrode, a differential pitch angle detection electrode, a differential Z-axis acceleration detection electrode, a differential X-axis acceleration detection electrode and a differential Y-axis acceleration detection electrode.
Fig. 11 is a schematic diagram of a driving mode of a gyroscope when four arrayed six-axis micro-inertial devices are connected in an array, in which each six-axis micro-inertial device only shows a portion a1-c, and a specific structure of a single six-axis micro-inertial device is shown in fig. 3. Under the action of a common driving force, two adjacent gyroscopes present a differential driving mode, the long axis direction of the oval form of the gyroscopes is vertical, the array mode is simple and effective, and the driving mode difference of the two adjacent arrayable annular coupling triaxial fully decoupled micro gyroscopes improves the measurement performance. When the six-axis micro-inertia device array works, the polarities of the differential counter electrodes of two adjacent six-axis micro-inertia devices are opposite (when a certain six-axis micro-inertia device electrode Bx + is the same as the electrode at the same position of the adjacent six-axis micro-inertia device, the electrode is Bx-).
The working process of the array-type four-mass three-axis gyroscope in the six-axis micro-inertial device can be divided into the following parts.
(1) A driving part: two driving electrodes A1-f of the peripheral horizontal part of the coupling part A1-c are connected through electrode leads (metal leads), two driving electrodes A1-f of the peripheral vertical part of the coupling part A1-c are connected, two driving electrodes A1-f of the internal horizontal part of the coupling part A1-c are connected, and two driving electrodes A1-f of the internal vertical part of the coupling part A1-c are connected; and a direct current signal with a certain amplitude and an alternating current signal with a certain amplitude phase are applied to the driving electrode A1-f at the peripheral horizontal part of the coupling component A1-c, and a signal with the same amplitude as the direct current signal at the horizontal part and an alternating current signal with the same amplitude and a phase difference of 180 degrees are applied to the driving electrode A1-f at the peripheral vertical part of the coupling component A1-c. According to a capacitive area-variable electrostatic force generation mechanism, alternating acting force is generated between the external drive fixed comb teeth A1-e and the external drive movable comb teeth A1-d to enable the coupling component A1-c to perform switching motion in an elliptical form with a long axis of a horizontal X axis and a vertical Y axis alternately, the motion of the coupling component A1-c drives the horizontal mass block A1-a1 and the drive frame A1-b in the A1-a2, the heading angle double-freedom frame A1-g and the rolling angle double-freedom frame A1-j to perform periodic reciprocating motion in the horizontal direction along the coupling beam A6 to drive the vertical mass block A1-A3 and the drive frame A1-b in the A1-a4 to perform periodic reciprocating motion in the vertical direction, the heading angle double-freedom frame A1-g and the pitching angle double-freedom frame A1-m.
(2) The drive detection section: the driving force acts on the coupling part A1-c to make the coupling part A1-c perform switching motion in an elliptical form with the long axis as the horizontal X axis and the vertical Y axis alternately, at the moment, the driving motion enables the driving frame A1-b to reciprocate through the coupling beam A6, so that the capacitance between the driving movable comb teeth A1-d and the driving fixed comb teeth A1-e on the driving frame A1-b is changed, and the driving detection function can be realized by making electrode leads at the lower end of the driving electrode A1-f.
(3) Heading angle (angular velocity about Z axis) detection section: when the gyroscope is sensitive to the input of an external course angular velocity, the course angle double-freedom-degree frame A1-g shown in FIG. 3 is subjected to a Copenoy force along the X direction due to the Copenoy effect, so that the course angle double-freedom-degree frame A1-g is pushed to move along the X direction; the course angle double-freedom-degree frame A1-g is connected with the course angle sensitive detection frame A1-h through the decoupling beam A6, and the movement of the course angle double-freedom-degree frame A1-g in the X direction is transmitted to the course angle sensitive frame A1-h; as the course angle sensitive frame A1-h is connected with the fixed anchor point A5 connected to the glass substrate through the decoupling beam A6, the course angle sensitive frame A1-h only moves in the X direction, the detection capacitance on the course angle detection electrode A1-i changes, and the corresponding course angular speed is detected. The heading angle two-degree-of-freedom frame A1-g shown in FIG. 4 will be subjected to a Coriolis force in the Y direction, thereby pushing the heading angle two-degree-of-freedom frame A1-g to move in the Y direction; the course angle double-freedom-degree frame A1-g is connected with the course angle sensitive frame A1-h through the decoupling beam A6, and the motion of the course angle double-freedom-degree frame A1-g in the Y direction is transmitted to the course angle sensitive frame A1-h; as the course angle sensitive frame A1-h is connected with the fixed anchor point A5 connected to the glass substrate through the decoupling beam A6, the course angle sensitive frame A1-h only moves in the Y direction, the detection capacitance on the course angle detection electrode A1-i changes, and the corresponding course angular speed is detected.
(4) A roll angle (angular velocity about the Y axis) detection section: when the gyroscope is sensitive to the input of the external roll angular velocity, the roll angle two-degree-of-freedom frame A1-j shown in FIG. 3 is subjected to a Copenoy force along the Z direction due to the Copenoy effect, so that the roll angle two-degree-of-freedom frame A1-j is pushed to move along the Z direction; the roll angle double-degree-of-freedom frame A1-j is connected with the roll angle sensitive frame A1-k through a decoupling beam A6, and the motion of the roll angle double-degree-of-freedom frame A1-j in the Z direction is transmitted to the roll angle sensitive frame A1-k; since the roll angle sensitive frame a1-k is connected to a fixed anchor point a5 attached to the glass substrate by a decoupling beam a6, the roll angle sensitive frame a1-k moves only in the Z direction. Under the out-of-plane motion method of the dynamic and static high-low comb tooth detection, the motion of the roll angle sensitive frame A1-k in the Z direction causes the static capacitance between the movable high comb tooth on the frame and the fixed low comb tooth of the roll angle detection electrode A1-l connected to the glass substrate to change, and the change of the capacitance detects the corresponding roll angle speed. Under the method of out-of-plane movement of deposited metal plate capacitance detection, a roll angle detection electrode A1-1 is a metal electrode plate connected to a substrate, the movement of a roll angle sensitive frame A1-k in the Z direction causes the capacitance between the roll angle detection electrode A1-l connected to the substrate to change, and the change of the capacitance detects the corresponding roll angle speed.
(5) Pitch angle (angular velocity about Y axis) detection section: when the gyroscope is sensitive to the input of the external pitch angle speed, due to the CoMP effect, the pitch angle double-freedom-degree frame A1-m shown in the figure 4 is subjected to CoMP force along the Z direction, so that the pitch angle double-freedom-degree frame A1-m is pushed to move along the Z direction; the pitch angle double-freedom-degree frame A1-m is connected with the pitch angle sensitive frame A1-n through the decoupling beam A6, and the motion of the pitch angle double-freedom-degree frame A1-m in the Z direction is transmitted to the pitch angle sensitive frame A1-n; since the pitch sensitive frame A1-n is connected to a fixed anchor A5 attached to the substrate by a decoupling beam A6, the pitch sensitive frame A1-n only moves in the Z direction. Under the out-of-plane motion method of dynamic and static high-low comb tooth detection, the motion of the pitch angle sensitive frame A1-n in the Z direction causes the static capacitance between the movable high comb teeth on the frame and the fixed low comb teeth of the pitch angle detection electrode A1-o connected to the substrate to change, and the change of the detection capacitance detects the corresponding pitch angle speed. Under the deposited metal plate capacitance detection out-of-plane movement method, the pitch angle detection electrode A1-o is a metal electrode plate connected to the substrate, the movement of the pitch angle sensitive frame A1-n in the Z direction causes the capacitance change between the pitch angle detection electrode A1-o connected to the substrate, and the pitch angle speed corresponding to the capacitance change detection is detected.
In the working process of the Z-axis torsional pendulum type accelerometer in the six-axis micro-inertial device, after the Z-axis acceleration acts on the whole device, the Z-axis torsional pendulum type mass block A2-a generates deflection motion around a decoupling beam A6 connected to an anchor point A5 under the action of the acceleration. Under the out-of-plane motion method of the dynamic and static high-low comb tooth detection surface, the deflection motion of the Z-axis torsional mass block A2-a in the Z direction causes the static capacitance between the movable high comb teeth on the frame and the fixed low comb teeth of the Z-axis acceleration detection electrode A2-b connected to the substrate to change, and the change of the detection capacitance detects the corresponding pitch angle speed. And under the deposited metal plate capacitance detection out-of-plane motion method, the Z-axis torsional mass A2-a moves in the Z direction to cause the capacitance between the Z-axis torsional mass A2-a and a Z-axis acceleration detection electrode plate A2-b connected to the substrate to change, and the change of the capacitance is detected to detect the corresponding pitch angle speed.
In the working process of the capacitive X-axis accelerometer in the six-axis micro-inertial device, after the acceleration of the X axis acts on the whole device, the X-axis mass block A3-a moves along the X direction under the action of the acceleration, the capacitance of movable comb teeth on the X-axis mass block A3-a and fixed comb teeth on the X-axis detection electrode A3-b changes, and the change of the capacitance is detected to detect the acceleration of the X axis.
In the working process of the capacitive Y-axis accelerometer in the six-axis micro-inertial device, after the acceleration of the Y axis acts on the whole device, the Y-axis mass block A4-a moves along the Y direction under the action of the acceleration, the movable comb teeth on the Y-axis mass block A4-a and the fixed comb teeth on the Y-axis detection electrode A4-b change in capacitance, and the change in capacitance is detected to detect the acceleration of the Y axis.
The processing method of the six-axis micro inertial sensor for detecting the movement outside the Z-axis surface on the deposited metal electrode flat plate, as shown in figure 12, comprises the following steps:
(a) taking a silicon wafer 11, polishing the surface while using H2SO4And H2O2And (4) washing the mixed solution.
(b) And uniformly coating photoresist on the surface of the silicon wafer 11, photoetching and developing by using the first mask plate, and obtaining the photoresist with anchor point patterns on the surface of the silicon wafer 11.
(c) The silicon wafer 11 is subjected to RIE dry etching by using the photoresist as a mask, the anchor point pattern is transferred to the surface of the silicon wafer 11, and then the photoresist as the mask is washed away.
(d) Another glass sheet 12 is taken and H is utilized2SO4And H2O2And (4) washing the mixed solution.
(e) Uniformly coating photoresist on the glass sheet 12, photoetching and developing by using a second mask, obtaining the photoresist with metal electrode and lead wire patterns on the surface of the glass sheet 12, sputtering a Cr/Au alloy layer, and obtaining the photoresist with the metal electrode and the lead wire on the surface of the glass sheet 12 by using a Lift-off stripping process.
(f) The processed silicon wafer 11 and the glass plate 12 are anodically bonded to obtain a bonded sample wafer 13.
(g) And uniformly coating a photoresist on the surface of the obtained sample wafer 13, photoetching and developing by using the mask 3, and obtaining the photoresist with a structural pattern on the surface of the sample wafer 13.
(h) And RIE etching is carried out on the sample wafer 13 by using the photoresist as a mask, and a silicon structure is processed to obtain a final device.
Preferably, the processing method of the six-axis micro inertial sensor for detecting the movement outside the Z-axis surface at the dynamic and static high and low comb teeth includes the following steps as shown in fig. 13:
(a) taking an SOI wafer 21 and using H2SO4And H2O2And (4) washing the mixed solution.
(b) A layer of silicon oxide is deposited on the surface of the SOI wafer 21 using an LPCVD process.
(c) Uniformly coating a layer of photoresist on the surface of the SOI wafer 21, photoetching and developing by using a third mask plate, and obtaining a layer of photoresist with static comb tooth patterns with different heights on the surface of the SOI wafer 21; etching SiO2 on the surface of the SOI wafer 21 by using photoresist as a mask to obtain silicon oxide with static comb tooth patterns with different heights; and washing off the surface photoresist.
(d) And uniformly coating a layer of photoresist on the surface of the SOI wafer 21, photoetching and developing by using a fourth mask plate, and obtaining a layer of photoresist with anchor point patterns on the surface of the SOI wafer 21.
(e) And etching the SOI wafer 21 by using the RIE process by using the photoresist and the silicon oxide as masks to obtain silicon anchor points and unequal-height static teeth.
(f) Taking a silicon wafer 22, polishing the surface while using H2SO4And H2O2And (4) washing the mixed solution.
(g) And uniformly coating photoresist on the surface of the silicon wafer 22, photoetching and developing by using a fifth mask plate, and obtaining the photoresist with anchor point patterns on the surface of the silicon wafer 22.
(h) The silicon wafer 22 is dry etched by RIE using the photoresist as a mask to transfer the anchor pattern to the surface of the silicon wafer 22, and then the photoresist as the mask is washed away.
(i) Another glass sheet 23 is taken and H is utilized2SO4And H2O2And (4) washing the mixed solution.
(j) And uniformly coating photoresist on the glass sheet 23, photoetching and developing by using a sixth mask, obtaining the photoresist with metal electrode and lead wire patterns on the surface of the glass sheet 23, sputtering a Cr/Au alloy layer, and obtaining the photoresist with the metal electrode and the lead wire on the surface of the glass sheet 23 by using a Lift-off stripping process.
(k) The processed silicon wafer 22 and the glass plate 23 are anodically bonded to obtain a bonded sample 24.
(l) And uniformly coating a photoresist on the surface of the obtained sample 24, photoetching and developing by using a fifth mask plate, and obtaining the photoresist with a structural pattern on the surface of the sample 23.
(m) the silicon structure is fabricated by RIE etching of the dummy wafer 24 using the photoresist as a mask.
(n) bonding the processed dummy wafer 24 and the SOI wafer 21 to obtain a final device.
Therefore, the sensor has a structure form of a square symmetrical structure and mainly comprises an array type common-centroid four-mass three-axis gyroscope and three common-centroid symmetrical accelerometers. The designed four-mass triaxial gyroscope comprises four completely consistent mass blocks which are distributed along the upper, lower, left and right sides, a course angle detection module and a rolling angle detection module are arranged in each of the left and right mass blocks, a course angle detection module and a pitching angle detection module are arranged in each of the upper and lower mass blocks, and all the mass blocks transmit driving motion through an external coupling ring to realize differential constant amplitude driving between the relative mass blocks. The three accelerometers with the same mass center symmetry are respectively a torsional pendulum type capacitance accelerometer capable of moving along the out-of-plane direction, an X-axis accelerometer capable of moving along the horizontal direction and a Y-axis accelerometer capable of moving along the vertical direction. Three accelerometers and one arrayed common-centroid four-mass triaxial gyroscope have a common centroid, and data processing is facilitated. The whole annular array-type four-mass coupling six-axis micro-inertial sensor can realize simple array through the connection of the coupling rings, and the accuracy and the redundancy of the system are improved.

Claims (6)

1. The utility model provides a but six little inertial sensor of array four mass coupling which characterized in that includes from top to bottom in proper order: the device structure layer is connected with the glass substrate layer (B) through anchor points (A5), the metal lead layer is positioned between the device structure layer and the glass substrate layer, and electrodes connecting part of the device structure layer and the glass substrate layer are led to the periphery through the metal leads; the device structure layer comprises a four-mass three-axis gyroscope structure (A1), a Z-axis torsional pendulum accelerometer (A2), a capacitive X-axis accelerometer (A3) and a capacitive Y-axis accelerometer (A4), which are sequentially arranged from outside to inside in a center overlapping manner; wherein:
the four-mass triaxial gyroscope structure (A1) comprises four identical first mass blocks (A1-a 1), second mass blocks (A1-a 2), third mass blocks (A1-A3) and fourth mass blocks (A1-a 4), wherein the four identical first mass blocks (A1-a 1), the second mass blocks (A1-a 2), the third mass blocks (A1-A3) and the fourth mass blocks (A1-a 4) are distributed from top to bottom and from left to right; a coupling member (A1-c); driving movable comb teeth (A1-d); driving the fixed comb teeth (A1-e); a drive electrode (A1-f); anchor points (a 5) and decoupling beams (a 6); the coupling part (A1-c) is of an annular structure, and the first mass block (A1-a 1) and the second mass block (A1-a 2) are positioned on the horizontal central axis of the coupling part (A1-c) and are respectively connected with the coupling part through a decoupling beam (A6); the third mass block (A1-A3) and the fourth mass block (A1-a 4) are positioned on a vertical central shaft of the coupling component (A1-c) and are respectively connected with the coupling component (A1-c) through a decoupling beam (A6); driving electrodes (A1-f) are respectively arranged at the periphery of the coupling component (A1-c) and at positions corresponding to the four mass blocks, and the driving electrodes (A1-f) are connected with the coupling component (A1-c) through driving comb teeth;
the Z-axis torsional pendulum type accelerometer comprises a Z-axis torsional pendulum mass block (A2-a), a Z-axis detection electrode (A2-b), an anchor point (A5) and a plurality of decoupling beams (A6), wherein a central frame of the Z-axis torsional pendulum mass block (A2-a) is arranged at the center of a four-mass three-axis gyroscope structure (A1), four fan-shaped structures of the Z-axis torsional pendulum mass block (A2-a) are respectively arranged in four fan-shaped areas formed among the four mass blocks, the central frame of the Z-axis torsional pendulum mass block (A2-a) is connected with the anchor point (A5) through the decoupling beams (A6), the Z-axis detection electrode (A2-b) is a metal flat plate positioned below the four fan-shaped structures of the Z-axis torsional pendulum mass block (A2-a) when a metal flat plate capacitor detection surface moves, and four fan-shaped structure edges of the Z-axis torsional pendulum mass block (A2-a) when moving and low comb-tooth detection surface move, the four fan-shaped structures of the Z-axis torsional pendulum mass block (A2-a) are connected through dynamic and static high-low comb teeth;
the capacitive X-axis accelerometer comprises an X-axis mass block (A3-a), an X-axis detection electrode (A3-b), anchor points (A5) and a plurality of decoupling beams (A6), wherein two sides of the X-axis mass block (A3-a) are respectively connected with the anchor points (A5) through the decoupling beams (A6), two X-axis detection electrodes (A3-b) are arranged on two sides of the interior of the X-axis mass block (A3-a), the X-axis detection electrodes (A3-b) are connected with two sides of the X-axis mass block (A3-a) through comb teeth, and the capacitive X-axis accelerometer is located inside the Y-axis accelerometer and the centers of the capacitive X-axis accelerometer are overlapped;
the capacitive Y-axis accelerometer comprises a Y-axis mass block (A4-a), Y-axis detection electrodes (A4-b), anchor points (A5) and a plurality of decoupling beams (A6), wherein the two Y-axis detection electrodes (A4-b) are arranged on two sides of the interior of the Y-axis mass block (A4-a) and connected with two side edges of the Y-axis mass block (A4-a) through comb teeth, the anchor points are respectively arranged on the other two sides of the interior of the Y-axis mass block (A4-a) and connected with the anchor points through the decoupling beams, and the capacitive Y-axis accelerometer is located inside a central frame of a Z-axis torsional mass block (A2-a) and has coincident center.
2. The annular arrayed four-mass-coupled six-axis micro inertial sensor of claim 1, wherein each of the first mass block (A1-a 1) and the second mass block (A1-a 2) in the horizontal direction comprises a driving frame (A1-b), a heading angle two-degree-of-freedom frame (A1-g), a heading angle sensitive frame (A1-h), a heading angle detection electrode (A1-i), a roll angle two-degree-of-freedom frame (A1-j), a roll angle sensitive frame (A1-k), a roll angle detection electrode (A1-l), a driving movable comb (A1-d), a driving fixed comb (A1-e), a driving electrode (A1-f), a plurality of anchor points (A5) and a plurality of decoupling beams (A6), the driving frame (A1-b) is a symmetrical frame structure comprising a first portion and a second portion, the heading angle double-freedom-degree frame (A1-g) is arranged in the first part and is connected with the driving frame through a decoupling beam, the heading angle sensitive frame (A1-h) is arranged inside the heading angle double-freedom-degree frame (A1-g) and is connected with the heading angle double-freedom-degree frame (A1-g) through the decoupling beam (A6), an anchor point (A5) is arranged between the heading angle double-freedom-degree frame (A1-g) and the heading angle sensitive frame (A1-h), the heading angle sensitive frame (A1-h) is connected with the anchor point through the decoupling beam (A6), and a heading angle detection electrode (A1-i) is positioned inside the heading angle sensitive frame (A1-h) and is connected with the heading angle sensitive frame (A1-h) through a detection comb tooth; the roll angle double-freedom-degree frame (A1-j) is arranged in the second part of the driving frame (A1-b) and connected with the driving frame through a decoupling beam, the roll angle sensitive frame (A1-k) is arranged inside the roll angle double-freedom-degree frame (A1-j) and connected with the roll angle double-freedom-degree frame (A1-j) through a decoupling beam (A6), an anchor point (A5) is arranged between the roll angle sensitive frame (A1-k) and the roll angle double-freedom-degree frame (A1-j), and the roll angle sensitive frame (A1-k) is connected with the anchor point through a decoupling beam (A6); the roll angle detection electrode (A1-l) is located below or inside the roll angle sensitive frame (A1-k), when the roll angle detection electrode (A1-l) is located below the roll angle sensitive frame (A1-k), the roll angle detection electrode (A1-l) is of a metal flat plate structure, and at the moment, the metal flat plate structure and the roll angle sensitive frame (A1-k) form a capacitor, so that a deposited metal electrode flat plate detects a Z-axis out-of-plane motion mode; when the roll angle detection electrode (A1-l) is located inside the roll angle sensitive frame (A1-k), the roll angle detection electrode (A1-l) is connected with the roll angle sensitive frame (A1-k) through dynamic and static high-low comb teeth, Z-axis out-of-plane motion is detected for the dynamic and static high-low comb teeth, the drive frame (A1-b) is connected with the anchor point (A5) through a decoupling beam, one side edge is connected with a coupling component through the decoupling beam, and the other side edge is connected with a drive electrode (A1-f) through the drive comb teeth.
3. An annular arrayed four-mass-coupled six-axis micro inertial sensor according to claim 2, wherein the structure of the third mass block (A1-A3) or the fourth mass block (A1-a 4) in the vertical direction is rotated by 90 degrees, namely the structure of the third mass block (A1-A3) or the fourth mass block (A1-a 4) is the same as that of the first mass block (A1-a 1) or the second mass block (A1-a 2) in the horizontal direction, and the first mass block (A1-a 1) or the second mass block (A1-a 2) in the horizontal direction is used for detecting a roll angle in a roll angle two-degree-of-freedom frame (A1-j), a roll angle sensitive frame (A1-k), and a roll angle detection electrode (A1-l) in the third mass block (A1-A3) or the fourth mass block (A1-a 4) in the vertical direction is used for detecting a pitch angle, and the sensor is named as a two-pitch angle frame (A1-m), A pitch angle sensitive frame (A1-n) and a pitch angle detection electrode (A1-o).
4. A processing method of the annular array-type four-mass coupling six-axis micro inertial sensor for detecting Z-axis out-of-plane motion on a deposited metal electrode flat plate, according to any one of claims 1 to 3, comprising the following steps:
(a) taking a silicon wafer (11), polishing the surface while using H2SO4And H2O2Cleaning the mixed solution;
(b) uniformly coating photoresist on the surface of a silicon wafer (11), photoetching and developing by using a mask (101), and obtaining the photoresist with anchor point patterns on the surface of the silicon wafer (11);
(c) RIE dry etching is carried out on the silicon wafer (11) by using the photoresist as a mask, the anchor point pattern is transferred to the surface of the silicon wafer (11), and then the photoresist as the mask is washed away;
(d) another glass sheet (12) is taken and utilized H2SO4And H2O2Cleaning the mixed solution;
(e) uniformly coating photoresist on a glass sheet (12), photoetching and developing by using a mask (102), obtaining the photoresist with metal electrode and lead wire patterns on the surface of the glass sheet (12), sputtering a Cr/Au alloy layer, and obtaining the photoresist with the metal electrode and the lead wire on the surface of the glass sheet (12) by using a Lift-off stripping process;
(f) carrying out anodic bonding on the processed silicon wafer (11) and the glass sheet (12) to obtain a bonded sample wafer (13);
(g) uniformly coating photoresist on the surface of the obtained sample wafer (13), photoetching and developing by using a mask (103), and obtaining the photoresist with a structural pattern on the surface of the sample wafer (13);
(h) and RIE etching is carried out on the sample wafer (13) by using the photoresist as a mask, and a silicon structure is processed to obtain a final device.
5. A processing method of the annular array-type four-mass coupling six-axis micro inertial sensor of any one of claims 1 to 3, which moves outside a Z-axis surface in dynamic and static high-low comb detection, is characterized by comprising the following steps:
(a) taking an SOI wafer (21), using H2SO4And H2O2Cleaning the mixed solution;
(b) depositing a layer of silicon oxide on the surface of an SOI wafer (21) by an LPCVD process;
(c) uniformly coating a layer of photoresist on the surface of an SOI wafer (21), photoetching and developing by using a mask (201), and obtaining a layer of photoresist with static comb tooth patterns with different heights on the surface of the SOI wafer (21); etching SiO2 on the surface of an SOI wafer (21) by using photoresist as a mask to obtain silicon oxide with static comb tooth patterns with different heights; washing off the surface photoresist;
(d) uniformly coating a layer of photoresist on the surface of the SOI wafer (21), photoetching and developing by using a mask (202), and obtaining a layer of photoresist with anchor point patterns on the surface of the SOI wafer (21);
(e) etching an SOI wafer (21) by using a RIE (reactive ion etching) process by using photoresist and silicon oxide as masks to obtain silicon anchor points and unequal-height static teeth;
(f) taking a silicon wafer (22), polishing the surface while using H2SO4And H2O2Cleaning the mixed solution;
(g) uniformly coating photoresist on the surface of the silicon wafer (22), photoetching and developing by using a mask (203), and obtaining the photoresist with anchor point patterns on the surface of the silicon wafer (22);
(h) RIE dry etching is carried out on the silicon wafer (22) by using the photoresist as a mask, the anchor point pattern is transferred to the surface of the silicon wafer (22), and then the photoresist as the mask is washed away;
(i) another one is takenGlass sheet (23) using H2SO4And H2O2Cleaning the mixed solution;
(j) uniformly coating photoresist on the glass sheet (23), photoetching and developing by using a mask (204), obtaining the photoresist with metal electrode and lead wire patterns on the surface of the glass sheet (23), sputtering a Cr/Au alloy layer, and obtaining the photoresist with metal electrode and lead wire on the surface of the glass sheet (23) by using a Lift-off stripping process;
(k) carrying out anodic bonding on the processed silicon wafer (22) and a glass sheet (23) to obtain a bonded sample wafer (24);
(l) Uniformly coating photoresist on the surface of the obtained sample wafer (24), photoetching and developing by using a mask (203), and obtaining the photoresist with a structural pattern on the surface of the sample wafer (23);
(m) RIE etching is carried out on the sample wafer (24) by using the photoresist as a mask to process a silicon structure;
(n) bonding the processed sample wafer (24) and the SOI wafer (21) to obtain a final device.
6. A monolithically integrated arrayed four-mass coupled six-axis micro inertial sensor, wherein a plurality of the arrayed four-mass coupled six-axis micro inertial sensor arrays according to any one of claims 1 to 3 are connected by a connection of a coupling component, two adjacent arrayed four-mass coupled six-axis micro inertial sensors exhibit a differential driving mode, the major axes of the elliptical shapes are vertical, and the polarities of the differential pair electrodes of two adjacent six-axis micro inertial devices are opposite.
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