CN111607783B - Semiconductor carrier, semiconductor processing equipment and purging method - Google Patents
Semiconductor carrier, semiconductor processing equipment and purging method Download PDFInfo
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- CN111607783B CN111607783B CN202010397100.8A CN202010397100A CN111607783B CN 111607783 B CN111607783 B CN 111607783B CN 202010397100 A CN202010397100 A CN 202010397100A CN 111607783 B CN111607783 B CN 111607783B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention discloses a semiconductor carrier, semiconductor processing equipment and a purging method, wherein the semiconductor carrier comprises a carrier body, the carrier body is provided with a bearing surface, the bearing surface is used for bearing a processed workpiece, the carrier body is provided with an air inlet hole, the bearing surface is provided with a purging hole, the air inlet hole is communicated with the purging hole, the air inlet hole is configured to be filled with purging gas, and the purging hole is configured to be used for blowing out the purging gas so as to purge the surface of a taking and placing device used for taking and placing the processed workpiece. By adopting the technical scheme, the problem that the processed workpieces such as semiconductors are scrapped due to the fact that the existing pick-and-place device is possibly contaminated by-products to pollute the next processed workpiece after the reaction process is finished by the polluted processed workpiece can be solved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor carrier, semiconductor processing equipment and a purging method.
Background
In the manufacturing process of semiconductors, a thin film to be deposited can be epitaxially formed on a substrate sheet by means of chemical vapor deposition. Before the epitaxial deposition reaction of the sheet, a workpiece such as a semiconductor sheet is fed into the reaction chamber by using a pick-and-place device, so as to perform the epitaxial deposition reaction on the workpiece. In the epitaxial deposition reaction process, because the reaction chamber has high temperature, large gas consumption and more byproducts, after one epitaxial reaction is finished, the edge of the taking and placing device may be contaminated by the byproducts of the epitaxial reaction in the process that the taking and placing device extends into the reaction part to take the wafer. If another workpiece is taken by the taking and placing device for the next epitaxial deposition reaction, the workpiece may be polluted by-products at the edge of the taking and placing device, so that the surface of the workpiece after the epitaxial reaction has defects of polycrystal and the like, and the sheet is scrapped.
Disclosure of Invention
The invention discloses a semiconductor carrier and semiconductor processing equipment, and aims to solve the problem that a current pick-and-place device is possibly contaminated with byproducts in the wafer picking process to pollute a next processed workpiece, so that the polluted processed workpiece has the defects of polycrystal and the like after the reaction process is finished, and the processed workpiece such as a semiconductor is scrapped.
In order to solve the problems, the invention adopts the following technical scheme:
in a first aspect, the present invention discloses a semiconductor carrier, which includes a carrier body, wherein the carrier body has a supporting surface, the supporting surface is used for supporting a workpiece, the carrier body is provided with an air inlet, the supporting surface is provided with a purge hole, the air inlet is communicated with the purge hole, the air inlet is configured to be fed with a purge gas, and the purge hole is configured to blow out the purge gas so as to purge a surface of a pick-and-place device for picking and placing the workpiece.
In a second aspect, the present invention discloses a semiconductor processing apparatus, which includes a transmission part, and a reaction part and a loading part both communicating with the transmission part, wherein the transmission part is provided with a pick-and-place device for picking and placing a workpiece from the reaction part and another workpiece from the loading part, and the loading part is provided with the semiconductor carrier.
In a third aspect, the present invention discloses a purging method applied to the semiconductor processing apparatus, including:
and purging the taking and placing device positioned above the bearing surface in the carrier body in a time period when the reaction part carries out the preparation process.
The technical scheme adopted by the invention can achieve the following beneficial effects:
the invention discloses a semiconductor carrier, which comprises a carrier body, wherein the carrier body is provided with a bearing surface, and a processed workpiece such as a semiconductor can be supported through the bearing surface in the processing process of the processed workpiece. Because the bearing surface of the carrier body is provided with the blowing hole, and the carrier body is provided with the air inlet communicated with the blowing hole, when the taking and placing device is positioned above the bearing surface of the carrier body, the blowing gas is introduced through the air inlet, and the blowing gas is blown out through the blowing hole so as to blow the surface of the taking and placing device, the purpose of cleaning the surface of the taking and placing device is realized, the problem that the next processed workpiece is polluted because the taking and placing device is infected with byproducts in the process of taking out the processed workpiece from the reaction part is prevented, and the product qualification rate of the processed workpieces such as semiconductors is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and do not limit the invention. In the drawings:
fig. 1 is a schematic structural diagram of a semiconductor carrier according to an embodiment of the present invention;
fig. 2 is a schematic cross-sectional view of a semiconductor carrier according to an embodiment of the invention.
Description of reference numerals:
100-carrier body, 110-bearing surface, 120-air inlet hole, 130-blowing hole, 140-circumferential air channel groove, 150-axial air channel groove and 160-taking and placing avoiding sinking platform.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the accompanying drawings. It is to be understood that the disclosed embodiments are merely exemplary of the invention, and are not intended to be exhaustive or exhaustive. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The technical solutions disclosed in the embodiments of the present invention are described in detail below with reference to the accompanying drawings.
As shown in fig. 1-2, an embodiment of the invention discloses a semiconductor carrier, which includes a carrier body 100, wherein the carrier body 100 has a supporting surface 110, and during the use of the semiconductor carrier, the supporting surface 110 can support a workpiece, so as to ensure that the workpiece can be stably supported on the supporting surface 110. Alternatively, the supporting surface 110 may be circular in shape to provide better support for a workpiece such as a wafer having a circular configuration. Accordingly, the size of the support surface 110 may be determined according to the actual situation such as the size of the workpiece, and is not limited herein.
As shown in fig. 1, the carrier body 100 is provided with an air inlet 120, and the air inlet 120 may be disposed on a side surface of the carrier body 100 or a back surface away from the supporting surface 110. Of course, the air inlet holes 120 can also be provided on the bearing surface 110 in case the size of the bearing surface 110 is sufficient. The bearing surface 110 is provided with a purge hole 130, the air inlet 120 is communicated with the purge hole 130, the air inlet 120 is configured to introduce purge gas, and the purge hole 130 is configured to blow out purge gas so as to purge the surface of a taking and placing device for taking and placing a processed workpiece, specifically, the sizes of the air inlet 120 and the purge hole 130 can be determined according to actual requirements. That is, in the using process of the semiconductor carrier, the purge gas is introduced into the gas inlet hole 120, so that the purge gas can be blown out from the purge hole 130, and when the pick-and-place device is located above the supporting surface 110, the surface of the pick-and-place device is purged by the purge gas, so as to clean the surface of the pick-and-place device by purging, thereby preventing the pick-and-place device from polluting a next workpiece due to by-products adhered to the surface of the pick-and-place device when the next workpiece is taken down by the pick-and-place device, and further improving the product yield of the workpiece.
Optionally, the air inlet holes 120 may be disposed on a side surface of the carrier body 100, and the side surface of the carrier body 100 is a surface of the carrier body 100 adjacent to the supporting surface 110. The gas supply device may be specifically communicated with the gas inlet 120 through a pipeline to supply a purge gas to the gas inlet 120, where the purge gas may be a gas that is not easily reacted with the workpiece, such as an inert gas. Alternatively, the purge gas may be high purity nitrogen, which may also reduce production costs.
Alternatively, the axial direction of the purge hole 130 is arranged in parallel with the thickness direction of the carrier body 100. In the case of such a configuration, the purge direction of the purge gas is perpendicular to the lower surface of the pick-and-place device facing the support surface 110, the purge gas is blown toward the lower surface, and when the purge gas flows to the lower surface, the purge gas is blocked by the lower surface, the purge direction of the purge gas can be changed and the purge gas can flow outwardly while adhering to the lower surface, and by-products adhering to the lower surface can be removed more thoroughly in the process of flowing outwardly while adhering to the lower surface. In addition, the purging gas can be purged along the side surface of the taking and placing device, so that when the purging gas flows along the side surface, the purging direction is perpendicular to the direction of the adhesion force of the byproducts, and the byproducts adhered to the side surface of the taking and placing device can be directly taken away. In conclusion, under the condition that the blowing hole 130 adopts the structure, the blowing effect can be greatly improved, and the product qualification rate of the processed workpiece is further improved. It should be noted that the surface of the pick-and-place device at least includes the lower surface and the side surface, and may also include a surface such as an upper surface of the pick-and-place device.
Optionally, the number of the purge holes 130 may be one, and in order to further improve the purge effect of the semiconductor carrier, the number of the purge holes 130 may be multiple, and the plurality of purge holes 130 includes a plurality of first purge holes, where the number of the first purge holes is less than or equal to the number of the purge holes. In this embodiment, a plurality of first purge holes are arranged at intervals along the circumference of the carrier body 100, forming a first purge ring. When the technical scheme is adopted, the first blowing ring can be basically ensured to provide blowing action for each position corresponding to the first blowing ring in the pick-and-place device. Optionally, the plurality of first purge holes are uniformly arranged, so as to further improve the cleaned effect at each position of the pick-and-place device corresponding to the first purge ring. Specifically, the radius of the first purge ring may be determined according to actual conditions such as the size of the pick-and-place device, the circumferential direction of the carrier body 100 refers to the surrounding direction of the outer circumferential surface of the carrier body 100, the circumferential direction of the carrier body 100 may be circular or square, and considering that the shape of the workpiece is generally circular, the shape of the first purge ring is preferably circular.
In addition, under the condition that the quantity of first purge hole is a plurality of, the quantity of inlet port 120 also can be a plurality of, and a plurality of inlet ports 120 communicate with a plurality of first purge holes each other respectively, can guarantee that the effect homogeneous phase that sweeps of a plurality of first purge holes is relatively higher on the one hand, on the other hand, even if certain inlet port 120 appears the circumstances such as jam, can not influence the normal clear of other first purge holes work yet. The plurality of air inlet holes 120 may be communicated with the same air supply device, or the plurality of air inlet holes 120 may be communicated with the plurality of air supply devices in a one-to-one correspondence manner.
Alternatively, as shown in fig. 1 and 2, a circumferential air channel groove 140 may be formed on the carrier body 100, in this case, only one air inlet hole 120 may be provided, and the plurality of first purge holes are communicated with the air inlet hole 120 through the circumferential air channel groove 140, so that the number of air supply devices and communication structures to be provided may be reduced, which may reduce the difficulty of connection and assembly between the semiconductor carrier and the air supply devices, and may reduce the production cost.
Alternatively, as shown in fig. 2, the cross-sectional area of the circumferential gas path groove 140 may be made larger than the cross-sectional area of any one of the first purge holes, so as to increase the gas flow rate and flow rate of each first purge hole to some extent, and further increase the purge effect. In the case where one air inlet hole 120 is provided, by directly communicating the air inlet hole 120 with the circumferential air path groove 140, it is possible to minimize adverse effects on the purge direction of the purge gas in the purge hole 130 due to the difference between the flow direction of the gas in the air inlet hole 120 and the axial direction of the purge hole 130.
In order to further improve the purging effect of the semiconductor carrier on the pick-and-place device, optionally, the plurality of purging holes 130 further include second purging holes, the plurality of second purging holes are all communicated with the air inlet hole 120, and the plurality of second purging holes are arranged at intervals along the circumferential direction of the carrier body 100 to form a second purging ring, wherein the second purging ring is located inside the first purging ring. For example, a first purge ring may purge edges on the side surface of the pick-and-place device, and a second purge ring located inside the first purge ring may purge the lower surface of the pick-and-place device facing the supporting surface 110, so that the cleaning effect of the pick-and-place device may be further improved by the cooperation of the first purge ring and the second purge ring. It should be noted that the shape and size of any first purge hole can be made to be the same as the shape and size of any second purge hole, which can reduce the processing difficulty of the semiconductor carrier, and the purge effect provided by the purge of any purge hole for the pick-and-place device can be made to be substantially the same.
Wherein, the plurality of second purge holes may be individually communicated with the gas inlet hole 120, or the second purge ring may be indirectly communicated with the gas inlet hole 120 through the first purge ring. Optionally, the carrier body 100 may further be provided with an axial gas channel groove 150, and the first purge holes are communicated with the second purge holes through the axial gas channel groove 150, so that in a case where the plurality of first purge holes are communicated through the circumferential gas channel groove 140, it can be ensured that the plurality of first purge holes and the plurality of second purge holes can all blow out purge gas only through one gas inlet hole 120.
Of course, when there are a plurality of second purge holes, the plurality of axial gas path slots 150 may communicate the plurality of second purge holes with the first purge ring, so as to ensure that each of the plurality of second purge holes can blow out the purge gas. Alternatively, another circumferential air channel groove may be formed on the carrier body 100 to communicate the second purge holes with each other through the circumferential air channel groove, in which case, only one axial air channel groove 150 needs to be provided to ensure that the second purge holes can all blow out the purge gas.
Alternatively, in the case where a plurality of second purge holes communicate with each other through the circumferential air path groove, the number of the axial air path grooves 150 may be made plural, and in this case, the flow velocity and flow rate of the air flow blown out by the second purge hole distant from the axial air path groove 150 may be prevented from being much smaller than those of the air flow blown out by the second purge hole distant from the axial air path groove 150. Under the action of the axial air path grooves 150, the flow velocity and the flow rate of the air flow blown out by the second blowing holes are relatively uniform, and the cleaning effect at each position on the taking and placing device is relatively uniform; moreover, when there are a plurality of axial air channel grooves 150, it is also possible to prevent the normal operation of the second purge ring from being affected by the occurrence of blockage in one of the axial air channel grooves 150.
Alternatively, in the case where the number of the axial air passage grooves 150 is plural, the plural axial air passage grooves 150 may be provided evenly and at intervals in the circumferential direction of the carrier body 100. Also, the number of the axial air channel slots 150 may be equal to the number of the second purge holes, which may further improve uniformity of the flow velocity and the flow rate of the air flow of each of the second purge holes. In addition, under the condition that the number of the axial gas path grooves 150 is equal to that of the second purge holes, the circumferential gas path grooves are not arranged among the second purge holes, so that the waste of purge gas can be reduced as much as possible, the flow speed and flow of the purge gas are improved, and the cleaning effect is improved.
In addition, when the first purge ring and the second purge ring having different radii are provided and the second purge ring is located inside the first purge ring, the semiconductor carrier having such a structure can be used to perform a purge operation on the pick-and-place device having a size suitable for each of the first purge ring and the second purge ring. During purging of the pick-and-place device, the pick-and-place device may be positioned directly above the first purge ring and/or the second purge ring. For example, the first purge ring may have a diameter of 8 inches, and the second purge ring may have a diameter of 6 inches, so as to provide a purge function for a pick-and-place device for picking and placing semiconductors such as wafers of corresponding sizes, respectively.
In addition, in the process of purging and cleaning, the purging gas blown out from the purging holes 130 and the byproducts purged from the pick-and-place device can be pumped out together by adopting a negative pressure suction mode, so that the byproducts purged and leaving the pick-and-place device are prevented from being attached to the pick-and-place device again after moving for a period of time.
For example, the semiconductor carrier may be mounted in a receiving chamber of a loading unit of a semiconductor processing apparatus by a connector such as a screw, a work piece subjected to a reaction and a work piece not subjected to a reaction may be exchanged in the receiving chamber of the loading unit, and a negative pressure suction apparatus may be connected to the receiving chamber, so that a purge gas and a dissociated by-product may be collectively extracted to the outside of the receiving chamber in a process of purging the loading/unloading device.
The taking and placing device can comprise a negative pressure adsorption mechanism or a vacuum adsorption mechanism, and the processed workpiece can be picked up in a negative pressure adsorption or vacuum adsorption mode. The pick-and-place device can also comprise an action mechanism such as a manipulator and the like so as to drive the workpiece to move between the reaction part of the semiconductor processing equipment and the semiconductor carrier.
Furthermore, during the processing of the semiconductor, the workpiece to be placed on the semiconductor carrier and subjected to the reaction process is taken away by the pick-and-place device, and then another workpiece to be subjected to the reaction process is placed on the semiconductor carrier and moved to the reaction part. The two pick-and-place devices can be different, the two pick-and-place devices can be the same or different in structure, one of the two pick-and-place devices can be arranged around the reaction part, and the other one of the two pick-and-place devices can be arranged around the semiconductor carrier, so that the moving radius of the pick-and-place device can be reduced, and the processing efficiency is improved.
As described above, in order to facilitate the process of taking a workpiece from a semiconductor carrier and placing the workpiece on the semiconductor carrier by another taking and placing device, as shown in fig. 1 and 2, optionally, the carrier body 100 is provided with a taking and placing avoidance sinking stage 160, and the taking and placing avoidance sinking stage 160 is formed by a portion of the supporting surface 110 being recessed in a direction away from the supporting surface 110, so that the supporting surface 110 has a taking and placing notch, and faces the upper surface of the taking and placing avoidance sinking stage 160 through the taking and placing notch. Moreover, the upper surface of the taking and placing avoiding sinking platform 160 is also connected with the outer side surface of the carrier body 100, so that the outer side surface of the carrier body 100 is also provided with a taking and placing notch.
In the process of taking and placing the processed workpiece by means of the taking and placing device, when the processed workpiece which completes the reaction process is supported on the semiconductor carrier, the taking and placing device can stretch into the position of the taking and placing avoiding sinking table 160 from the taking and placing notch positioned on the outer side surface of the carrier body 100, so that the taking and placing device can lift the processed workpiece from the lower part of the processed workpiece, the taken and placing notch positioned on the supporting surface is separated from the semiconductor carrier in a lifting mode, and the processed workpiece is taken away from the semiconductor carrier. Correspondingly, the workpiece is lifted by the taking and placing device, and the workpiece is required to be placed on the semiconductor carrier, the taking and placing device can be enabled to gradually move downwards from the top of the semiconductor carrier, and the taking and placing notch on the supporting surface 110 is moved to the position of taking and placing avoiding sinking table 160, when the taking and placing device moves to the position of taking and placing avoiding sinking table 160, the workpiece can be supported on the supporting surface 110 of the semiconductor carrier, at the moment, the taking and placing device can leave the semiconductor carrier from the position of the taking and placing notch on the outer side surface of the carrier body 100, and the placing work of the workpiece is completed. Specifically, the size and shape of the pick-and-place avoiding sinker 160 can be determined according to the size and shape of the pick-and-place device, and are not limited herein.
In order to make the first blowing holes uniformly arranged along the circumferential direction of the carrier body 100, as described above, when the pick-and-place avoiding sinking platform 160 is disposed on the carrier body 100, a part of the first blowing holes in the plurality of first blowing holes may be disposed on the upper surface of the pick-and-place avoiding sinking platform 160 facing the supporting surface 110, and the other part of the first blowing holes may still be located on the supporting surface 110.
As described above, since the pick-and-place avoiding sunken platform 160 is formed by sinking a part of the supporting surface 110 in a direction away from the supporting surface 110, and when the pick-and-place device is purged, the pick-and-place device is located above the supporting surface 110, in this case, a distance between the first purge hole located on the surface of the pick-and-place avoiding sunken platform 160 and the pick-and-place device is inevitably larger than a distance between the first purge hole located on the supporting surface 110 and the pick-and-place device.
In order to ensure that the purging effect on each part of the pick-and-place device is relatively good, at least two first purging holes 130 may be located on the upper surface of the pick-and-place avoiding sunken table 160, another at least two first purging holes may be located on the supporting surface 110, and an angle of a circular arc between two adjacent first purging holes located on the upper surface of the pick-and-place avoiding sunken table 160 is smaller than an angle of a circular arc between two adjacent first purging holes located on the supporting surface 110. That is to say, in the case that the first blowing ring includes a plurality of first blowing holes distributed along the circumferential direction of the carrier body 100, the density of the first blowing holes on the upper surface of the pick-and-place avoiding sunken table 160 may be greater than the density of the first blowing holes on the supporting surface 110, so that the blowing effect of the first blowing holes on the upper surface of the pick-and-place avoiding sunken table 160 is substantially the same as the blowing effect of the first blowing holes on the supporting surface 110, and the overall uniformity of the cleaned effect of the pick-and-place device is improved.
In addition, according to actual conditions, the density of the first purging holes can be increased in the region of the supporting surface 110 corresponding to the position of the pick-and-place device which is easily contaminated with byproducts and/or is contaminated with more byproducts, so that when the pick-and-place device is purged by the semiconductor carrier, the purging effect on the pick-and-place device can be further increased, and the relatively high degree of cleaning at each position of the pick-and-place device is ensured. Accordingly, in the case that the upper surface of the pick-and-place avoiding sinking platform 160 exists in the plurality of second purging holes, the density of the second purging holes on the upper surface of the pick-and-place avoiding sinking platform 160 can be increased, so as to improve the overall purging effect of the second purging ring,
under the condition that at least one of the first blowing holes is located on the taking and placing avoiding sinking platform, the radius of the first blowing hole located on the upper surface of the taking and placing avoiding sinking platform 160 can be larger than that of the first blowing hole located on the bearing surface 110, so that the blowing effect of the first blowing hole located on the upper surface of the taking and placing avoiding sinking platform 160 is basically the same as that of the first blowing hole located on the bearing surface 110, and the integral uniformity degree of the cleaned effect of the taking and placing device is improved.
Based on the semiconductor carrier disclosed in the above embodiment, an embodiment of the present invention further discloses a semiconductor processing apparatus, the semiconductor processing apparatus includes a transmission portion, a reaction portion and a loading portion, the reaction portion and the loading portion are both communicated with the transmission portion, the transmission portion is provided with a pick-and-place device, the pick-and-place device can pick and place a workpiece from the reaction portion and another workpiece from the loading portion, and the loading portion is provided with the semiconductor carrier disclosed in any of the above embodiments.
In the processing process of a workpiece such as a semiconductor, the pick-and-place device can pick up the workpiece to be reacted placed on the semiconductor carrier, transfer the workpiece into the reaction part, and enable the workpiece to perform the reaction process in the reaction part. And the taking and placing device can also extend into the reaction part to transfer the processed workpiece after the reaction process to the semiconductor carrier. In the processing process of the semiconductor, the taking and placing device can be moved to the upper part of the semiconductor carrier, and under the condition that the air inlet hole 120 is filled with the purging gas, the purpose of cleaning the surface of the taking and placing device is realized by the purging gas blown out from the purging hole 130, the problem that the next processed workpiece is scrapped due to the fact that byproducts are possibly adhered in the process of taking the processed workpiece out of the reaction part by the taking and placing device to pollute the next processed workpiece is avoided, and the product qualification rate is improved.
Based on the semiconductor processing equipment disclosed by the embodiment, the embodiment of the invention also discloses a purging method of the pick-and-place device, wherein the purging method comprises the following steps: and purging the taking and placing device positioned above the bearing surface in the carrier body in the time period when the reaction part carries out the preparation process.
Specifically, after the workpiece to be reacted is transferred into the reaction portion by the pick-and-place device, the workpiece is subjected to a reaction process in the reaction portion, and after the reaction process of the workpiece is completed, the workpiece can be taken out from the reaction portion by the pick-and-place device and placed on the semiconductor carrier. After the workpiece is taken out from the reaction part, the reaction part needs to be prepared, for example, a cleaning gas such as nitrogen is introduced into the reaction part, and by-products in the reaction part are thoroughly removed in the process of gas exchange. During the period of time when the preparation process is carried out in the reaction part, the taking and placing device can be moved to the upper part of the bearing surface in the carrier body, and the surface of the taking and placing device is subjected to the blowing process through the blowing gas blown from the blowing holes. When the technical scheme is adopted, the blowing process and the preparation process are carried out synchronously, the process of cleaning, taking and placing the device does not occupy extra processing time, and the time utilization rate is high.
Certainly, the purging process of the pick-and-place device can be completed before the preparation process is completed, so that the purging process is further ensured not to occupy extra processing time, and when the preparation process is completed, the pick-and-place device can immediately place the next workpiece to be reacted into the reaction part from the feeding port to perform the next reaction process.
In the above embodiments of the present invention, the differences between the embodiments are described in emphasis, and different optimization features between the embodiments can be combined to form a better embodiment as long as the differences are not contradictory, and further description is omitted here in view of brevity of the text.
The above description is only an example of the present invention, and is not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (12)
1. A semiconductor carrier applied to semiconductor processing equipment, the semiconductor processing equipment comprises a loading part, the semiconductor carrier is arranged in the loading part, the semiconductor carrier comprises a carrier body (100), the carrier body (100) is provided with a bearing surface (110), the bearing surface (110) is used for bearing a processed workpiece, the carrier body (100) is provided with an air inlet hole (120), the bearing surface (110) is provided with a purge hole (130), the air inlet hole (120) is communicated with the purge hole (130), the air inlet hole (120) is configured to be filled with purge gas, the purge hole (130) is configured to blow out the purge gas, when a pick-and-place device for picking and placing the processed workpiece is positioned at the loading part, the purge gas blows out the surface of the pick-and-place device from the purge hole (130), so as to prevent the workpiece from being polluted when the pick-and-place device picks and places the workpiece again.
2. The semiconductor carrier of claim 1, wherein an axial direction of the purge hole (130) is arranged parallel to a thickness direction of the carrier body (100).
3. The semiconductor carrier of claim 1, wherein the purge holes (130) are plural in number and include a plurality of first purge holes spaced circumferentially along the carrier body (100) forming a first purge ring.
4. The semiconductor carrier of claim 3, wherein the carrier body (100) is further provided with a circumferential air channel groove (140), and a plurality of the first purge holes are all communicated with the air inlet hole (120) through the circumferential air channel groove (140).
5. The semiconductor carrier of claim 3, wherein the plurality of purge holes (130) further comprises a second plurality of purge holes, each of the second plurality of purge holes in communication with the gas inlet hole (120), the second plurality of purge holes being spaced circumferentially along the carrier body (100) forming a second purge ring, wherein the second purge ring is located inside the first purge ring.
6. The semiconductor carrier of claim 5, wherein the carrier body (100) is further provided with an axial gas channel groove (150), the first purge hole being in communication with the second purge hole through the axial gas channel groove (150).
7. The semiconductor carrier according to claim 5, wherein the carrier body (100) is further provided with a circumferential air channel groove (140), and a plurality of the second purge holes are communicated with the air inlet holes (120) through the circumferential air channel groove (140).
8. The semiconductor carrier according to claim 3, wherein the carrier body (100) is provided with a pick-and-place avoidance sinker (160), the pick-and-place avoidance sinker (160) is formed by a portion of the supporting surface (110) being recessed in a direction away from the supporting surface (110), and an upper surface of the pick-and-place avoidance sinker (160) is connected to an outer side surface of the carrier body (100).
9. The semiconductor carrier of claim 8, wherein at least two first purge holes are located on an upper surface of the pick-and-place avoidance sinker (160), and at least two other first purge holes are located on the supporting surface (110), and an angle of a circular arc between two adjacent first purge holes on the upper surface of the pick-and-place avoidance sinker (160) is smaller than an angle of a circular arc between two adjacent first purge holes on the supporting surface (110).
10. The semiconductor carrier of claim 8, wherein a radius of the first purge hole at an upper surface of the pick-and-place avoidance sinker (160) is greater than a radius of the first purge hole at the support surface (110).
11. A semiconductor processing apparatus comprising a transfer section, and a reaction section and a loading section both communicating with the transfer section, the transfer section being provided with a pick-and-place device for picking and placing a work piece from the reaction section and another work piece from the loading section, the loading section being provided with the semiconductor carrier according to any one of claims 1 to 10.
12. A purging method applied to the semiconductor processing apparatus as set forth in claim 11, comprising:
purging the pick-and-place device above the support surface (110) in the carrier body (100) during a period of time when the preparation process is performed by the reaction part.
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