JP5451662B2 - Liquid processing apparatus and liquid processing method - Google Patents

Description

  The present invention relates to a liquid processing apparatus and a liquid processing method for performing predetermined liquid processing on a substrate such as a semiconductor wafer.

  In the manufacturing process of a semiconductor device or a flat panel display (FPD), a liquid processing process for supplying a processing liquid to a substrate such as a semiconductor wafer or a glass substrate is performed. As such a process, for example, a cleaning process for removing particles or contamination attached to the substrate, a developer supply process in a photolithography process, an etching process in an etching process, and the like can be given.

  As a liquid processing apparatus used in a liquid processing process, a substrate is rotated by holding a central portion of a back surface of a substrate such as a semiconductor wafer with a spin chuck, and a processing liquid is supplied to the front surface and / or back surface of the substrate. And the single-wafer | sheet-fed thing which processes a back surface is known.

  In particular, in the substrate cleaning process, there is an apparatus configured to rotate the substrate while pressing the outer peripheral edge of the substrate with a plurality of holding members in order to clean the entire back surface of the substrate (for example, Patent Document 1).

Japanese Patent Laid-Open No. 11-176895 JP 2009-147146 A (paragraphs 0033 and 0043)

When the outer peripheral edge of the substrate is held by a plurality of holding members, the processing liquid may flow on the substrate surface in the outer peripheral direction during the rotation of the substrate, bounce off the holding member, and reattach to the substrate surface. For this reason, instead of the holding member that holds the outer peripheral edge of the substrate, a gas such as N ₂ gas is ejected and sucked to almost the entire surface of the substrate while supporting the back surface of the substrate with a support member. A substrate processing apparatus that holds a substrate has been proposed (Patent Document 2).

According to this substrate processing apparatus, since there is no holding member at the outer peripheral edge of the substrate, the processing liquid does not rebound, and thus the problem of reattachment of the processing liquid to the substrate surface is solved.
However, when the gas is ejected to almost the entire surface of the substrate, the flow of the processing liquid flowing on the substrate surface may be hindered by the ejected gas.

  The present invention is made in consideration of such points, and when cleaning the substrate surface while holding the substrate by ejecting the gas, the flow of the cleaning liquid on the substrate surface is inhibited by the ejected gas. Provided are a liquid processing apparatus and a liquid processing method capable of being suppressed.

  According to the first aspect of the present invention, the substrate support member that supports the substrate from the back surface, the rotation mechanism that rotates the substrate support member, and the process of supplying the processing liquid to the substrate supported by the substrate support member A gas supply unit configured to eject gas to the substrate supported by the substrate support member and to press the substrate against the substrate support member, and the rotation mechanism via the substrate support member And a gas jetting unit disposed upstream of the processing liquid supply unit in the rotation direction of the substrate rotated by the liquid processing apparatus.

  According to the second aspect of the present invention, the step of supporting the substrate from the back surface by the substrate support member, and the gas is ejected from the gas ejection portion that ejects gas to the substrate supported by the substrate support member, A step of pressing the substrate against the substrate support member, a step of rotating the substrate by rotating the substrate support member, and a treatment liquid supply disposed downstream of the gas ejection portion in the rotation direction of the substrate Supplying a processing liquid to the substrate supported and rotated by the substrate support member.

  According to the embodiments of the present invention, there are provided a liquid processing apparatus and a liquid processing method capable of efficiently performing liquid processing while easily suppressing a shift during substrate rotation.

It is a schematic top view which shows the substrate processing apparatus containing the liquid processing apparatus by embodiment of this invention. It is a schematic side view which shows the liquid processing apparatus by embodiment of this invention. It is a figure which shows the positional relationship in the horizontal direction of the composite member and wafer of the liquid processing apparatus of FIG. It is explanatory drawing explaining the function of the composite member of the liquid processing apparatus of FIG. It is explanatory drawing explaining the modification of the composite member of the liquid processing apparatus by embodiment of this invention. It is explanatory drawing explaining the other modification of the composite member of the liquid processing apparatus by embodiment of this invention.

  Hereinafter, non-limiting exemplary embodiments of the present invention will be described with reference to the accompanying drawings. In the accompanying drawings, the same or corresponding parts or members are denoted by the same or corresponding reference numerals, and redundant description is omitted.

  First, a substrate processing apparatus including a liquid processing apparatus according to an embodiment of the present invention will be described with reference to FIG. As shown in FIG. 1, the substrate processing apparatus 100 includes a carrier station S1 on which a plurality of (four in the illustrated example) wafer carriers C that accommodate a plurality of wafers W are placed, a carrier station S1, and a liquid processing described later. A loading / unloading station S2 for transferring the wafer W to / from the station S3, and a liquid processing station S3 in which the liquid processing apparatus 1 according to the embodiment of the present invention is disposed.

  The loading / unloading station S2 has a transport mechanism 11 that unloads the wafer W from the wafer carrier C and places it on the stage 13 and picks up the wafer W from the stage 13 and loads it into the wafer carrier C. The transfer mechanism 11 has a holding arm 11 a that holds the wafer W. The transport mechanism 11 can move along a guide 12 that extends in the arrangement direction of the wafer carriers C (X direction in the drawing). Further, the transport mechanism 11 can move the holding arm 11a in a direction perpendicular to the X direction (Y direction in the drawing) and in the vertical direction, and can rotate the holding arm 11a in a horizontal plane.

  The liquid processing station S3 includes a transfer chamber 16 extending in the Y direction and a plurality of liquid processing apparatuses 1 provided on both sides of the transfer chamber 16a. A transfer mechanism 14 is provided in the transfer chamber 16, and the transfer mechanism 14 has a holding arm 14 a that holds the wafer W. The transport mechanism 14 can move along a guide 15 provided in the transport chamber 16 and extending in the Y direction. Further, the transport mechanism 14 can move the holding arm 14a in the X direction, and can rotate it in a horizontal plane. The transfer mechanism 24 transfers the wafer W between the transfer stage 13 of the carry-in / out station S <b> 2 and each liquid processing apparatus 1.

  In the substrate processing apparatus 100 having the above configuration, the wafer W is taken out from the wafer carrier C placed on the carrier station S 1 by the transport mechanism 11 and placed on the stage 13. The wafer W on the stage 13 is carried into the liquid processing apparatus 1 by the transfer mechanism 14 in the liquid processing station S3, and liquid processing is performed on the surface of the wafer W (described later). After the liquid processing, the wafer W is returned to the wafer carrier C through a path (procedure) reverse to that at the time of loading. Further, while the liquid processing is performed on one wafer W, the other wafers W are sequentially transferred to the other liquid processing apparatus 1, and the liquid processing is performed on the other wafers W. For this reason, the liquid processing can be performed on the wafer W with high throughput.

  Next, the liquid processing apparatus 1 will be described with reference to FIGS. As illustrated, the liquid processing apparatus 1 includes a wafer support member 10 that supports the wafer W, a motor M that rotates the wafer support member 10, and presses the wafer W against the wafer support member 10. And a composite member 20 for supplying a processing liquid to the wafer W supported by the substrate. Further, the liquid processing apparatus 1 is provided with a cup portion 30 that surrounds the periphery of the wafer support member 10, receives the processing liquid supplied from the fluid supply member 200 to the wafer W, and discharges the processing liquid to the outside from the discharge port 30 d. . The liquid processing apparatus 1 includes a housing 1C, and the wafer support member 10, the motor M, the composite member 20, the cup portion 30, and the like described above are accommodated in the housing 1C. Further, the housing 1C is provided with a transport port 1H for carrying the wafer W into the housing 1C and unloading the wafer W from the housing 1C, and the transport port 1H is driven by a drive unit (not shown). The shutter 1G can be opened and closed.

  The wafer support member 10 includes an annular plate member 10a having an opening in the central portion, a hollow cylindrical base portion 10b attached to the opening edge of the central opening on the back surface side of the plate member 10a, and a plate member. And a cylindrical circumferential portion 10c rising from the outer periphery of 10a. The circumferential portion 10c has an inner diameter slightly larger than the outer diameter of the wafer W, and a claw portion S extending inward from the circumferential portion 10c is provided on the upper portion. As shown in FIG. 3, in the present embodiment, twelve claw portions S are provided at a predetermined interval in the circumferential portion 10c. These claw portions S support the wafer W in contact with the peripheral edge of the back surface of the wafer W.

  Referring to FIG. 2 again, a sleeve 34s attached to an opening provided in the center of the bottom of the housing 1 is provided inside the base portion 10b. In addition, a baffle plate 34b is provided at the upper end of the sleeve 34s in order to prevent a liquid from a processing liquid supply unit 20L described later from flowing through a gap between the sleeve 34s and the base portion 10b. Further, the upper end of the base portion 10b extends to prevent the liquid (fluid) from flowing around the baffle plate 34b.

  The motor M surrounds the base portion 10b of the wafer support member 10 and holds the base portion 10b rotatably. Thereby, the wafer support member 10 and the wafer W supported by the wafer support member 10 can be rotated.

  A composite member 20 is disposed above the wafer W supported by the wafer support member 10. The composite member 20 is connected to the lifting mechanism 20E by the support member 20S, and can be moved up and down by the lifting mechanism 20E. When the wafer W is loaded into the housing 1C, the composite member 20 is retracted to the upper position by the lifting mechanism 20E, and after the wafer W is loaded and supported by the wafer support member 10, the lifting mechanism 20E. And is disposed slightly above the surface of the wafer W. Further, the elevating mechanism 20E is provided with a drive mechanism 20D, and the elevating mechanism 20E and thus the composite member 20 can be moved in the horizontal direction by the drive mechanism 20D.

FIG. 3 is a diagram showing the positional relationship between the composite member 20 and the wafer W in the horizontal direction. As shown in the figure, the composite member 20 extends substantially in the radial direction from the approximate center of the wafer W toward the outer edge. In the present embodiment, the composite member 20 ejects a gas, for example, nitrogen (N ₂ ) gas, to the wafer W and a treatment liquid supply unit 20L that supplies a treatment liquid to the wafer W, and N N that has been ejected. _And a gas ejection suction portion 20G for sucking _two gases. As illustrated, the processing liquid supply unit 20L extends from the substantially center of the wafer W to the outer edge so as to extend along the radial direction of the wafer W. Further, the gas ejection suction unit 20G is disposed substantially parallel to the processing liquid supply unit 20L on the upstream side of the processing liquid supply unit 20L with respect to the rotation direction RD of the wafer W.

In the present embodiment, the processing liquid supply unit 20L is formed as a conduit extending in the longitudinal direction of the composite member 20, and a plurality of holes 2LH opening toward the wafer W are formed at predetermined intervals at the bottom of the conduit. ing. Further, as shown in FIG. 2, a processing liquid supply source LS is connected to the processing liquid supply unit 20L via a pipe 3L provided with an on-off valve 3LV, a flow meter 3LF, and a needle valve 3LN. With such a configuration, the processing liquid supplied from the processing liquid supply source LS is supplied toward the wafer W from the plurality of holes 2LH of the processing liquid supply unit 20L. Examples of the treatment liquid include deionized water (DIW), alcohol (for example, isopropyl alcohol (IPA), SC1 (NH ₄ OH + H ₂ O ₂ + H ₂ O), or SC2 (HCl + H ₂ O ₂ + H ₂ ) in the cleaning treatment. In addition, a developing solution is used as a chemical solution in the development process, and hydrofluoric acid (HF), buffered hydrofluoric acid (BHF), or HNO ₃ is processed in the etching process. It may be used as a liquid.

  As shown in FIGS. 3 and 4, a plurality of holes 2 </ b> GH and 2 </ b> EH opening toward the wafer W are formed in the gas ejection suction portion 20 </ b> G in two rows. In the present embodiment, the plurality of holes 2GH and the plurality of holes 2EH are alternately arranged along the longitudinal direction of the composite member 20. The plurality of holes 2GH are connected to one end of a pipe 3G provided with an on-off valve 3GV, a flow meter 3GF, and a needle valve 3GN through a predetermined conduit. A gas supply source GS is connected to the other end of the pipe 3G. With such a configuration, the gas supplied from the gas supply source GS is ejected toward the wafer W from the plurality of holes 2GH as indicated by arrows AG in FIG.

  The processing liquid supply source LS may include a heating device LSh, and the processing liquid may be heated to a temperature higher than normal temperature and supplied to the processing liquid supply unit 20L according to the processing liquid. In this case, it is preferable that the gas supply source GS also includes the heating device GSh. If the gas is heated to a predetermined temperature by the heating device GSh and supplied to the wafer W through the gas ejection suction unit 20G, the temperature of the wafer W and thus the temperature of the processing liquid can be suppressed from decreasing, so that the cleaning effect is reduced. Can be suppressed. Moreover, when heating a process liquid and gas, it is preferable to maintain these piping 3L and 3G at predetermined temperature by winding the tape heater H around the piping 3L and 3G, for example.

  The plurality of holes 2EH are connected through a predetermined conduit to one end of a pipe 3E provided with an on-off valve 3EV, a flow meter 3EF, and a needle valve 3EN. A suction device ES is connected to the other end of the pipe 3E. The suction device ES may be a vacuum pump, for example. With such a configuration, the atmosphere in the space between the composite member 20 and the wafer W is sucked by the suction device ES from the plurality of holes 2EH as indicated by an arrow AE in FIG.

  Next, the operation (liquid processing method) of the liquid processing apparatus 1 configured as described above will be described with reference to the drawings referred to so far. When the composite member 20 is retracted upward by the elevating mechanism 20E (FIG. 2) and the shutter 1G is opened, the wafer W is loaded into the housing 1C by the transfer arm (for example, the holding arm 14a of the transfer mechanism 14). After the wafer W is transferred from the transfer arm to the wafer support member 10 and the transfer arm is withdrawn from the housing 1C, the composite member 20 is lowered by the elevating mechanism 20E and disposed slightly above the surface of the wafer W. Subsequently, gas is ejected from the gas ejection suction portion 20G of the composite member 20 to the surface of the wafer W, and the wafer M is rotated by the motor M and thus the wafer W is rotated. Next, the processing liquid is supplied to the surface of the wafer W from the processing liquid supply unit 20 </ b> L of the composite member 20.

  After supplying the processing liquid for a predetermined time, the supply of the processing liquid from the processing liquid supply unit 20L is stopped, the rotation of the wafer support member 10 is stopped, and the gas from the gas ejection suction unit 20G of the composite member 20 is stopped. Stop supplying. Thereafter, the wafer W is unloaded from the housing 1C by the reverse procedure of loading the wafer W into the housing 1C, and the liquid processing in the liquid processing apparatus 1 is completed.

  According to the liquid processing apparatus 1 configured as described above, the claw portion S of the wafer support member 10 is formed by ejecting gas from the plurality of holes 2GH of the gas ejection suction portion 20G of the composite member 20 toward the wafer W. The wafer W can be pressed against the substrate. When the wafer support member 10 is rotated by the motor M (FIG. 2), the wafer W may slide with respect to the claw portion 12. Such slip is likely to occur particularly at the start of rotation and at the time of rotation stop. However, according to the gas ejection suction portion 20G of the composite member 20 in the present embodiment, the wafer W can be pressed against the claw portion S by the gas, so that the rotation of the wafer W is suppressed and the wafer W is reliably supported. be able to.

Further, the gas ejection suction unit 20G is located on the upstream side of the processing liquid supply unit 20L with respect to the rotation direction RD of the wafer W. Since the processing liquid supplied from the processing liquid supply unit 20L flows toward the downstream side in the wafer rotation direction from the processing liquid supply unit 20L, the flow of the processing liquid is not easily inhibited by the gas ejected from the gas ejection suction unit 20G. The processing liquid spreads over almost the entire surface of the wafer W. Therefore, the surface of the wafer W can be processed uniformly.
In addition, since the gas ejected from the gas ejection suction unit 20G is unlikely to hinder the flow of the processing liquid, the amount of ejected gas can be increased and the wafer W can be held more reliably.

  In addition, since the gas ejection suction unit 20G blows gas to the surface of the wafer W on the upstream side of the processing liquid supply unit 20L, the surface of the wafer W is supplied from the processing liquid supply unit 20L to the downstream side in the wafer rotation direction. The flowing processing liquid can be blown off by the gas from the gas ejection suction unit 20G before reaching the lower side of the processing liquid supply unit 20L again. For this reason, it is possible to prevent the processing liquid flowing on the surface of the wafer W from being mixed with the processing liquid supplied to the surface of the wafer W from the processing liquid supply unit 20L. Therefore, it becomes possible to supply a fresh processing liquid to the surface of the wafer W, and the processing efficiency can be improved.

  Further, by ejecting gas from the plurality of holes 2GH of the gas ejection suction unit 20G toward the wafer W, and by sucking gas from the plurality of holes 2EH at a flow rate substantially the same as or slightly smaller than the total ejection amount, The wafer W supported by the claw portion S of the wafer support member 10 can be pressed against the claw portion S. That is, the wafer W can be reliably supported also by this. In addition, by performing gas ejection and suction simultaneously, a uniform gas layer having a predetermined pressure (higher than normal pressure) can be formed in the space between the gas jet suction unit 20G and the wafer W. Therefore, not only the wafer W is pressed, but also the warp (deflection) of the wafer W can be corrected.

  Hereinafter, modified examples of the composite member 20 will be described. FIG. 5 is a diagram illustrating a horizontal positional relationship between the composite member 21 and the wafer W according to the modification. As illustrated, the composite member 21 has a length that is substantially the same as or slightly longer than the diameter of the wafer W, and is disposed substantially along the diameter of the wafer W. Further, the composite member 21 is provided with a processing liquid supply unit 21L in addition to the processing liquid supply unit 20L. In this modification, the processing liquid supply unit 21L is arranged in parallel with the processing liquid supply unit 20L. Although not shown, one end of a pipe having the same configuration as the pipe 3L connected to the processing liquid supply unit 20L is connected to the processing liquid supply unit 21L, and another processing liquid is connected to the other end of the pipe. A supply source is connected. Further, similarly to the processing liquid supply unit 20L, a plurality of holes 2LH that open toward the wafer W are also formed in the processing liquid supply unit 21L at predetermined intervals. With such a configuration, for example, in the cleaning process, for example, DIW can be supplied from the processing liquid supply unit 20L, and for example, IPA can be supplied from the processing liquid supply unit 21L.

  In the composite member 21, the gas ejection suction unit 20G extends in a direction opposite to the direction in which the processing liquid supply units 20L and 21L extend. Except for this point, the gas ejection suction part 20G of the composite member 21 has the same configuration as the gas ejection suction part 20G of the composite member 20. For this reason, the gas ejection suction part 20G can press the wafer W against the claw part S, thereby supporting the wafer W reliably. Further, since the position of the gas ejection suction unit 20G corresponds to the upstream side of the processing liquid supply units 20L and 21L in the rotation direction RD of the wafer, the same effect as that of the composite member 20 can be exhibited.

  In FIG. 5, the processing liquid supply unit 20L is arranged along the radial direction from the approximate center of the wafer W toward the outer edge, and the processing liquid supply unit 21L is arranged shifted from the radial direction. However, when supplying the processing liquid from the processing liquid supply unit 21L, the composite member 21 is moved by the drive mechanism 20D shown in FIG. 2 so that the processing liquid supply unit 21L moves from the substantially center of the wafer W toward the outer edge. They can be arranged substantially along the radial direction.

  FIG. 6 is a diagram illustrating a positional relationship in the horizontal direction between the composite member 22 and the wafer W according to another modification. As illustrated, the composite member 22 has a length that is substantially the same as or slightly longer than the diameter of the wafer W, and is disposed substantially along the diameter of the wafer W. Similar to the composite member 21 shown in FIG. 5, the composite member 22 includes a processing liquid supply unit 20 </ b> L and a processing liquid supply unit 21 </ b> L that are arranged substantially parallel to each other. Thus, it becomes possible to supply the cleaning liquid corresponding to the processing liquid supply unit 20L and the processing liquid supply unit 21L.

  The gas ejection suction portion 20G of the composite member 22 extends from one end side of the composite member 22 to the other end side. In other words, the gas ejection suction unit 20G extends along a portion substantially parallel to the processing liquid supply unit 20L and the processing liquid supply unit 21L, and a direction opposite to the direction in which the processing liquid supply unit 20L and the processing liquid supply unit 21L extend. And have a part. Except this point, the gas ejection suction part 20G has the same configuration as the gas ejection suction part 20G of the composite members 20 and 21. According to such a configuration, since the composite member 22 can press the wafer W in a wide range, the wafer W can be more reliably supported. Further, since the gas ejection suction unit 20G of the composite member 22 is arranged on the upstream side in the rotation direction of the wafer W with respect to the processing liquid supply units 20L and 21L, the same effects as the above-described composite members 20 and 21 are provided. Can be demonstrated.

  Note that, in order to align the processing liquid supply units 20L and 21L with respect to the wafer W, the composite member 22 may be moved in the horizontal direction by the drive mechanism 20D, similarly to the composite member 21 described above. .

  The present invention has been described above with reference to some embodiments and modifications. However, the present invention is not limited to the above-described embodiments and modifications, and various modifications can be made in light of the appended claims. Or it can be changed.

For example, in the above-described embodiment and modification, the gas ejection suction unit 20G and the processing liquid supply unit 20L are integrally provided in the composite member 20, but on the upstream side of the processing liquid supply unit 20L in the rotation direction of the wafer. As long as the gas ejection suction unit 20G is arranged, the gas ejection suction unit 20G and the processing liquid supply unit 20L may be configured separately.
Further, the gas ejection suction portion 20G is not limited to the shape shown in the drawing. Further, the size (area) of the gas ejection suction portion 20G, the number of the plurality of holes 2GH, the number of the plurality of holes 2EH, and the number of the plurality of holes 2GH and 2EH are not limited to those illustrated. For example, it is preferable to determine the wafer W so that the wafer W can be surely pressed in consideration of the size of the wafer W, the ejection amount of the gas ejected from the gas ejection suction unit 20G, the ejection pressure, and the like.
Further, in the above-described embodiments and modifications, the wafer support member 10 has the claw portion S, and the back surface peripheral portion of the wafer W is supported by the claw portion S. The wafer W may be supported inside the portion.

The gas ejected from the gas ejection suction unit 20G is not limited to N ₂ gas, and may be, for example, clean air.
Further, the processing member supply unit 21L in the composite member 21 described with reference to FIG. 5 may be provided in the composite member 20 described with reference to FIGS. Conversely, in the composite members 21 and 22, either one of the processing liquid supply units 20L and 21L may be provided.

Furthermore, the composite members 20, 21, and 22 may have a fan-like shape, for example, instead of an elongated rod-like shape.
Further, the heating device LSh shown in FIG. 2 may be provided independently from the processing liquid supply source LS, and the heating device GSh may be provided independently from the gas supply source GS.

Further, the processing liquid supply unit 20L or 21L may be configured to be able to switch and supply two or more types of processing liquids. For example, by providing a three-way valve in the pipe 3L connected to the processing liquid supply unit 20L, connecting another pipe connected to another process liquid supply source to one end of the three-way valve, and switching the three-way valve, You may switch the process liquid to supply. Of course, other piping may be provided with an on-off valve, a flow meter, and a needle valve.
Further, the wafer W is not limited to a semiconductor wafer and may be a glass substrate for FPD.

  DESCRIPTION OF SYMBOLS 1 ... Liquid processing apparatus, 1C ... Housing | casing, 1G ... Shutter, 1H ... Transfer port, 10 ... Wafer support member, 10a ... Plate member, 10b ... Base part, 10c ... Circumferential part, S ... Claw part, 20 ... Composite member, 20D ... Drive mechanism, 20E ... Lifting mechanism, 20S ... Support member, 20G ... Gas ejection suction Part, 20L ... treatment liquid supply part, 2LH, 2GH, 2EH ... hole, LS ... treatment liquid supply source, GS ... gas supply source, ES ... suction device, M ... motor , W ... wafer.

Claims (16)

A substrate support member for supporting the substrate from the back surface;
A rotation mechanism for rotating the substrate support member;
A processing liquid supply unit that extends from the outer edge of the substrate supported by the substrate support member toward the center of the substrate and supplies the processing liquid to the substrate;
A gas ejection unit that ejects gas to the substrate supported by the substrate support member and presses the substrate against the substrate support member, and is rotated by the rotation mechanism via the substrate support member. And a gas jetting part disposed upstream of the processing liquid supply part in the rotation direction of the substrate.   The liquid processing apparatus according to claim 1, wherein the gas ejection unit is juxtaposed with the processing liquid supply unit.   The liquid processing apparatus according to claim 1, wherein the gas ejection part extends in a direction opposite to a direction in which the processing liquid supply part extends from an outer edge of the substrate toward a center direction of the substrate.   The liquid processing apparatus according to any one of claims 1 to 3, wherein the gas ejection unit and the processing liquid supply unit are disposed on one member. A gas suction part capable of sucking the gas ejected from the gas ejection part;
The liquid processing apparatus according to claim 1, wherein a gas ejection suction section capable of pressing the substrate against the substrate support member is configured by the gas ejection section and the gas suction section.   The liquid processing apparatus according to claim 5, wherein the gas ejection suction unit is juxtaposed with the processing liquid supply unit.   The liquid processing apparatus according to claim 5, wherein the gas ejection suction unit extends in a direction opposite to a direction in which the processing liquid supply unit extends from an outer edge of the substrate toward a center direction of the substrate.   The liquid processing apparatus according to claim 5, wherein the gas ejection suction unit and the processing liquid supply unit are disposed on one member.   The liquid processing apparatus according to claim 1, further comprising another processing liquid supply unit that supplies another processing liquid to the substrate supported by the substrate support member.   The liquid processing apparatus according to claim 9, further comprising a moving mechanism that arranges one of the processing liquid supply unit and the other processing liquid supply unit so as to extend from a center of the substrate to an outer edge of the substrate.   The liquid processing apparatus according to any one of claims 1 to 10, further comprising a first heating device that heats the processing liquid supplied to the liquid processing supply unit.   The liquid processing apparatus of Claim 11 further provided with the 2nd heating part which heats the said gas supplied with respect to the said gas ejection part. Supporting the substrate from the back surface by the substrate support member;
Ejecting gas from a gas ejection portion that ejects gas to the substrate supported by the substrate support member, and pressing the substrate against the substrate support member;
Rotating the substrate by rotating the substrate support member;
Supplying a processing liquid to the substrate that is supported and rotated by the substrate support member from a processing liquid supply section that is disposed downstream of the gas ejection section in the rotation direction of the substrate. .   The liquid according to claim 13, wherein the pressing step is a step of pressing the substrate against the substrate support member while sucking the gas by a gas suction unit capable of sucking the gas ejected from the gas ejection unit. Processing method.   The liquid processing method according to claim 13, further comprising a step of supplying the other processing liquid from another processing liquid supply unit that supplies the other processing liquid to the substrate supported by the substrate support member. .   The liquid processing method according to claim 15, further comprising a step of moving one of the processing liquid supply unit and the other processing liquid supply unit so as to be positioned above a center of the substrate.

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