CN111596521A - Layout structure for improving exposure resolution and manufacturing method - Google Patents
Layout structure for improving exposure resolution and manufacturing method Download PDFInfo
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- CN111596521A CN111596521A CN202010446374.1A CN202010446374A CN111596521A CN 111596521 A CN111596521 A CN 111596521A CN 202010446374 A CN202010446374 A CN 202010446374A CN 111596521 A CN111596521 A CN 111596521A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
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- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention provides a layout structure for improving exposure resolution and a manufacturing method thereof, wherein the layout structure is provided with a first graph, a second graph, a third graph and a third graph which are positioned on the same layer, have a strip-shaped structure and are sequentially distributed in parallel from top to bottom; the first graph is positioned at the upper left of the second graph, and the third graph is positioned at the lower right of the second graph; a part of the second pattern other than the end portion is defined as a second segment pattern; the right end graph of the first graph is defined as a first subsection graph; the left end part of the third graph is defined as a third subsection graph; the second segmented graph is projected upwards and completely to the first segmented graph and projected downwards and completely to the third segmented graph; and the lengths of the first segmented pattern and the third segmented pattern are both greater than the length of the second segmented pattern. The invention can make the space compact by extending the adjacent patterns, is more suitable for the optimal set space period of the exposure light source, effectively improves the space image contrast during exposure, reduces the process variation bandwidth and enlarges the process window.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a layout structure for improving exposure resolution and a manufacturing method thereof.
Background
In the traditional layout, some graphs can only adjust the critical dimension by adjusting the dimension of the layout after OPC correction, so as to improve the process window, as shown in FIG. 1, 02 is the graph of the original layout; 01 is the target layer after OPC correction; the line width of the segment 03 of the graph 02 of the original layout at the junction of the graph is smaller than the width of the two sides after correction, the segmented graph is in an open environment, and the resolution is lower after exposure. If the width of the segment 03 is manually adjusted, the distance between the segment 03 and the adjacent figure above the segment or the distance between the segment 03 and the adjacent figure below the segment does not meet the requirement of the design rule, so for the structure of the graph 02 of the original layout, the adjacent figure above the segment is positioned on one side (left side) of the graph, the adjacent figure below the segment is positioned on the other side (right side) of the graph, and the joint in the middle of the segment cannot be manually adjusted to avoid the risk of disconnection after subsequent exposure.
Therefore, a new structure is needed to improve the exposure resolution, so as to avoid the risk of line breaking caused by insufficient resolution after exposure due to the pattern being in an open environment.
Disclosure of Invention
In view of the above disadvantages of the prior art, an object of the present invention is to provide a layout structure and a manufacturing method thereof for improving exposure resolution, so as to solve the problem of line break risk caused by low exposure resolution of a pattern in an open environment in the prior art.
To achieve the above and other related objects, the present invention provides a layout structure for improving exposure resolution, at least comprising: original layout; the original layout at least comprises first to third graphs which are positioned on the same layer, have a strip structure in shape and are sequentially distributed in parallel from top to bottom; the first graph is positioned at the upper left of the second graph, and the third graph is positioned at the lower right of the second graph; a part of the second pattern other than the end portion is defined as a second segment pattern;
the right end part graph of the first graph is defined as a first subsection graph; the left end part of the third graph is defined as a third subsection graph; the second segmented graphic is projected upward completely to the first segmented graphic and projected downward completely to the third segmented graphic; and the lengths of the first segment pattern and the third segment pattern are both greater than the length of the second segment pattern.
Preferably, the first to third patterns are equal in width.
Preferably, the distance between the second pattern and the first pattern is equal to the distance between the second pattern and the third pattern.
Preferably, the portion of the second graphic defined as the second segmented graphic is located at a middle portion of the second graphic.
Preferably, the first pattern and the third pattern are equal in length.
Preferably, the first segment pattern extends from left to right relative to the second segment pattern, a left end of the first segment pattern starts from a left end of the second segment pattern, and a right end of the first segment pattern ends to the upper right of a right end of the second segment pattern.
Preferably, the third segment graphic extends from right to left with respect to the second segment graphic, a right end portion of the third segment graphic starts at a right end portion of the second segment graphic, and a left end portion of the third segment graphic ends at a lower left side of the left end portion of the second segment graphic.
Preferably, the first and third segment patterns have the same length.
Preferably, the lengths of the first segment pattern and the third segment pattern are both greater than or equal to 120 nm.
Preferably, an open environment is arranged above the second pattern on the right side of the first subsection pattern.
Preferably, the left end part of the first graph is connected with an irregular graph, and the irregular graph and the first graph form an original layout graph before OPC correction; two end parts of the second graph are connected with irregular graphs, and the irregular graphs and the second graph form an original layout graph before OPC correction; and the right end part of the third graph is connected with an irregular graph, and the irregular graph and the third graph form an original layout graph before OPC correction.
The invention also provides a manufacturing method of the layout structure for improving the exposure resolution, which at least comprises the following steps:
step one, providing an original layout; the original layout at least comprises three strip-shaped structures which are positioned on the same layer and are sequentially distributed in parallel from top to bottom; the strip-shaped structure positioned in the middle is a second graph, and a part, which is not at the end part, in the second graph is defined as a second subsection graph; the right end part of the strip-shaped structure positioned above the second graph is aligned with the left end part of the second segmented graph; the left end part of the strip-shaped structure positioned below the second graph is aligned with the right end part of the second segmented graph;
adding a first segmentation graph connected with the bar-shaped structure at the right end part of the bar-shaped structure above the second graph, wherein the first segmentation graph and the bar-shaped structure form a first graph, and the length of the first segmentation graph is greater than that of the second segmentation graph;
and thirdly, adding a third subsection graph connected with the strip-shaped structure at the left end part of the strip-shaped structure below the second graph, wherein the third subsection graph and the strip-shaped structure form a third graph, and the length of the third subsection graph is greater than that of the second subsection graph.
Preferably, the three strip-shaped structures in step one are equal in width.
Preferably, the width of the first segment pattern added in step two is equal to the width of the bar-shaped structure connected thereto.
Preferably, the width of the third segmented pattern added in step three is equal to the width of the stripe structure connected thereto.
Preferably, the first pattern formed in the second step and the third pattern formed in the third step have the same pitch as the second pattern, respectively.
Preferably, the length of the first segmentation pattern added in step two is equal to the length of the third segmentation pattern added in step three.
Preferably, the lengths of the first segment pattern and the third segment pattern are both equal to 120 nm.
As described above, the structure for improving exposure resolution and the manufacturing method of the invention have the following beneficial effects: the invention can make the space compact by extending the adjacent patterns, is more suitable for the optimal set space period of the exposure light source, effectively improves the space image contrast during exposure, reduces the process variation bandwidth and enlarges the process window.
Drawings
FIG. 1 is a schematic diagram showing the distribution of segmented patterns with narrow middle width in an original layout in the prior art;
FIG. 2 is a graph showing the relationship between the length of a segment pattern and the normalized contrast ratio in the present invention;
FIG. 3 is a schematic diagram showing the distribution of the first to third patterns according to the present invention;
FIG. 4 is a schematic diagram of a simulated exposure after OPC correction of a pattern at the center of a branch in the prior art;
FIG. 5 is a schematic diagram of a simulated exposure after OPC correction of a second segment pattern according to the present invention;
FIG. 6 is a schematic diagram showing a layout in which irregular patterns are connected to the ends of the first to third patterns according to the present invention.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 2 to 5. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
The invention provides a layout structure for improving exposure resolution, as shown in fig. 3, fig. 3 shows a first graph to a third graph distribution schematic diagram of the invention; the layout structure of the invention at least comprises: original layout; the original layout at least comprises first to third graphs which are positioned on the same layer, have a strip structure in shape and are sequentially distributed in parallel from top to bottom; the first graph is positioned at the upper left of the second graph, and the third graph is positioned at the lower right of the second graph; a part of the second pattern other than the end portion is defined as a second segment pattern 02; as shown in fig. 3, the first graph 1, the second graph 2, and the third graph 03 are located in the same layer of the original layout, and the first graph to the third graph are all in a stripe structure; the first graph 1 to the third graph 3 are sequentially arranged in the same graph layer, and the first graph to the third graph are parallel to each other. Further, the widths of the first to third patterns are equal. I.e. the three stripe structures are all equal in width. Still further, the distance between the second pattern 2 and the first pattern 1 is equal to the distance between the second pattern 2 and the third pattern 3.
The right end part graph of the first graph is defined as a first subsection graph 01; the left end part of the third graph is defined as a third subsection graph 03; the second segment graphic 02 is projected upward completely to the first segment graphic 01 and projected downward completely to the third segment graphic 03; and the lengths of the first and third segment patterns 01 and 03 are greater than the length of the second segment pattern 02. Further, the portion of the second graphic defined as the second segmented graphic is located in a middle portion of the second graphic. That is, a part of the second graphic is defined as a second sectional graphic 02 which is located at a certain section of the second graphic 2 and is not both end portions of the second graphic. The first graphic is positioned at the upper left of the second graphic, and the third graphic is positioned at the lower right of the second graphic. The second pattern is adjacent to the first pattern and the third pattern, respectively, that is, no other pattern exists between the second pattern and the first pattern, and no other pattern exists between the second pattern and the third pattern. Further, the first pattern and the third pattern have the same length.
The second segment pattern 02 is completely projected upward to the first segment pattern 01, that is, the left end of the second segment pattern 02 is located at the right side of the left end of the first segment pattern or aligned with the left end of the first segment pattern; the right end part of the second segmented pattern 02 is positioned on the left side of the right end part of the first segmented pattern; further, in this embodiment, the first segment pattern extends from left to right relative to the second segment pattern, the left end of the first segment pattern starts from the left end of the second segment pattern, and the right end of the first segment pattern ends at the upper right of the right end of the second segment pattern.
The second segment pattern 02 is completely projected downward to the third segment pattern 03, that is, the right end of the second segment pattern 02 is located at the left side of the right end of the third segment pattern or aligned with the right end of the third segment pattern; the left end of the second segment graphic 02 is located at the right side of the third segment graphic 03, and further, the third segment graphic extends from right to left with respect to the second segment graphic, the right end of the third segment graphic starts at the right end of the second segment graphic, and the left end of the third segment graphic terminates at the lower left of the left end of the second segment graphic.
Further, the first segment pattern and the third segment pattern have the same length. Still further, the lengths of the first segment pattern and the third segment pattern are both greater than or equal to 120 nm. In this embodiment, the lengths of the first segment pattern and the third segment pattern are both equal to 120 nm. In this embodiment, the upper side of the second pattern on the right side of the first segment pattern is in an open environment. And an open environment is arranged below the second graph on the left side of the third subsection graph.
Further, in other embodiments of the present invention, an irregular graph is connected to a left end of the first graph, and the irregular graph and the first graph form an original layout graph before OPC correction; two end parts of the second graph are connected with irregular graphs, and the irregular graphs and the second graph form an original layout graph before OPC correction; and the right end part of the third graph is connected with an irregular graph, and the irregular graph and the third graph form an original layout graph before OPC correction. As shown in fig. 6, fig. 6 is a schematic layout diagram of the irregular figure connected to the ends of the first to third figures according to the present invention. That is, the first to third patterns in the present invention are the "bar-shaped structures" of the bar-shaped structures, which do not include the irregular patterns forming the ends of the first to third patterns, and the "bar-shaped structures" of the first to third patterns in the present invention only refer to the structures near the second segment patterns, and in other embodiments of the present invention, the irregular patterns connected to the ends of the first to third patterns may be included, and the irregular patterns respectively form an integral pattern with the first to third patterns.
The invention also provides a manufacturing method of the layout structure for improving the exposure resolution, which comprises the following steps in the embodiment:
step one, providing an original layout; the original layout at least comprises three strip-shaped structures which are positioned on the same layer and are sequentially distributed in parallel from top to bottom; the strip-shaped structure positioned in the middle is a second graph, and a part, which is not at the end part, in the second graph is defined as a second subsection graph; the right end part of the strip-shaped structure positioned above the second graph is aligned with the left end part of the second segmented graph; the left end part of the strip-shaped structure positioned below the second graph is aligned with the right end part of the second segmented graph; further, the three bar structures in the first step have the same width.
Adding a first subsection graph 01 connected with the bar-shaped structure at the right end part of the bar-shaped structure above the second graph, wherein the first subsection graph 01 and the bar-shaped structure form a first graph 1, and the length of the first subsection graph 01 is greater than that of the second subsection graph 02; further, the width of the first segment pattern 01 added in the second step is equal to the width of the bar structures connected thereto. Still further, the first pattern 1 formed in the second step and the third pattern 3 formed in the third step have the same pitch as the second pattern 2, respectively. And the length of the first segmentation pattern 01 added in step two is equal to the length of the third segmentation pattern 03 added in step three. The lengths of the first segment pattern 01 and the third segment pattern 03 are both equal to 120 nm.
Adding a third segmentation graph 03 connected with the strip-shaped structure at the left end part of the strip-shaped structure below the second graph 2, wherein the third segmentation graph 03 and the strip-shaped structure form a third graph 3, and the length of the third segmentation graph 03 is greater than that of the second segmentation graph 02. Further, the width of the third segment pattern 03 added in step three is equal to the width of the bar structures connected thereto.
As shown in FIG. 2, FIG. 2 is a graph showing the relationship between the length of the segment pattern and the normalized contrast in the present invention. It can be seen that the first segment pattern and the third segment pattern of the present invention extend in two opposite directions, and the contrast of the second segment pattern 02 is increased with the increasing length. After the first segmentation graph and the third segmentation graph are added, the method still accords with the layout design rule. In the invention, the effect of improving the resolution of the second segmented graph can be achieved only by adding the first segmented graph and the third segmented graph above and below the second segmented graph, and the effect of improving the image resolution can not be achieved only by adding one of the upper graph and the lower graph. Therefore, for a specific graphic environment like the second graphic in the present invention, the first and third segment graphics added above and below form a specific relative position with the second segment graphic, and thus an effect of improving the resolution of the intermediate graphic can be achieved.
As shown in fig. 4 and 5, fig. 4 is a schematic diagram of simulated exposure after correcting the middle pattern OPC in the prior art; FIG. 5 is a schematic diagram of a simulated exposure after OPC correction of a second segment pattern according to the present invention. As can be seen from the comparison between fig. 4 and fig. 5, after the exposure simulation, the first segment pattern and the third segment pattern respectively extend in two opposite directions, and the ambient density in the second segment pattern in the second pattern is increased, so that the resolution of the second segment pattern is increased, the second segment pattern is more suitable for the optimal set spatial period of the exposure light source, the spatial image contrast during the exposure is effectively improved, the process variation bandwidth is reduced, and the process window is enlarged.
In summary, the present invention can make the space compact by extending the adjacent patterns, so as to be more suitable for the optimal set space period of the exposure light source, effectively improve the spatial image contrast during exposure, reduce the process variation bandwidth, and enlarge the process window. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (20)
1. A layout structure for improving exposure resolution, comprising at least:
original layout; the original layout at least comprises first to third graphs which are positioned on the same layer, have a strip structure in shape and are sequentially distributed in parallel from top to bottom; the first graph is positioned at the upper left of the second graph, and the third graph is positioned at the lower right of the second graph; a part of the second pattern other than the end portion is defined as a second segment pattern;
the right end part graph of the first graph is defined as a first subsection graph; the left end part of the third graph is defined as a third subsection graph; the second segmented graphic is projected upward completely to the first segmented graphic and projected downward completely to the third segmented graphic; and the lengths of the first segment pattern and the third segment pattern are both greater than the length of the second segment pattern.
2. The layout structure for improving exposure resolution according to claim 1, wherein: the first to third patterns are equal in width.
3. The layout structure for improving exposure resolution according to claim 2, wherein: the distance between the second pattern and the first pattern is equal to the distance between the second pattern and the third pattern.
4. The layout structure for improving exposure resolution according to claim 3, wherein: the portion of the second graphic defined as a second section graphic is located in a middle portion of the second graphic.
5. The layout structure for improving exposure resolution according to claim 1, wherein: the first pattern and the third pattern have the same length.
6. The layout structure for improving exposure resolution according to claim 1, wherein: the first segmented graph extends from left to right relative to the second segmented graph, the left end of the first segmented graph starts from the left end of the second segmented graph, and the right end of the first segmented graph ends to the upper right of the right end of the second segmented graph.
7. The layout structure for improving exposure resolution according to claim 1, wherein: the third segmented graphic extends from right to left relative to the second segmented graphic, a right end portion of the third segmented graphic starts at a right end portion of the second segmented graphic, and a left end portion of the third segmented graphic ends at a lower left side of the left end portion of the second segmented graphic.
8. The layout structure for improving exposure resolution according to claim 1, wherein: the first segment pattern and the third segment pattern have the same length.
9. The layout structure for improving exposure resolution according to claim 1, wherein: the lengths of the first subsection graph and the third subsection graph are both larger than or equal to 120 nm.
10. The layout structure for improving exposure resolution according to claim 1, wherein: the lengths of the first subsection graph and the third subsection graph are both equal to 120 nm.
11. The layout structure for improving exposure resolution according to claim 1, wherein: and the upper part of the second graph on the right side of the first subsection graph is in an open environment.
12. The layout structure for improving exposure resolution according to claim 1, wherein: and an open environment is arranged below the second graph on the left side of the third subsection graph.
13. The layout structure for improving exposure resolution according to claim 1, wherein: the left end part of the first graph is connected with an irregular graph, and the irregular graph and the first graph form an original layout graph before OPC correction; two end parts of the second graph are connected with irregular graphs, and the irregular graphs and the second graph form an original layout graph before OPC correction; and the right end part of the third graph is connected with an irregular graph, and the irregular graph and the third graph form an original layout graph before OPC correction.
14. The method for manufacturing a layout structure with an improved exposure resolution according to any one of claims 1 to 13, wherein the method at least comprises the following steps:
step one, providing an original layout; the original layout at least comprises three strip-shaped structures which are positioned on the same layer and are sequentially distributed in parallel from top to bottom; the strip-shaped structure positioned in the middle is a second graph, and a part, which is not at the end part, in the second graph is defined as a second subsection graph; the right end part of the strip-shaped structure positioned above the second graph is aligned with the left end part of the second segmented graph; the left end part of the strip-shaped structure positioned below the second graph is aligned with the right end part of the second segmented graph;
adding a first segmentation graph connected with the bar-shaped structure at the right end part of the bar-shaped structure above the second graph, wherein the first segmentation graph and the bar-shaped structure form a first graph, and the length of the first segmentation graph is greater than that of the second segmentation graph;
and thirdly, adding a third subsection graph connected with the strip-shaped structure at the left end part of the strip-shaped structure below the second graph, wherein the third subsection graph and the strip-shaped structure form a third graph, and the length of the third subsection graph is greater than that of the second subsection graph.
15. The method for manufacturing a layout structure with an improved exposure resolution according to claim 14, wherein the widths of the three stripe structures in the first step are equal.
16. The method for manufacturing a layout structure with an improved exposure resolution according to claim 15, wherein the width of the first segmentation pattern added in the second step is equal to the width of the bar structures connected thereto.
17. The method for manufacturing a layout structure with an improved exposure resolution according to claim 16, wherein the width of the third segment pattern added in step three is equal to the width of the bar structures connected thereto.
18. The method for manufacturing a layout structure with an improved exposure resolution as defined in claim 16, wherein the first pattern formed in step two and the third pattern formed in step three are spaced at the same pitch as the second pattern, respectively.
19. The method for manufacturing a layout structure with an improved exposure resolution according to claim 13, wherein the length of the first segment pattern added in step two is equal to the length of the third segment pattern added in step three.
20. The method for manufacturing a layout structure with an improved exposure resolution according to claim 19, wherein the lengths of the first segment pattern and the third segment pattern are both equal to 120 nm.
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|---|---|---|---|---|
| US20020127479A1 (en) * | 2000-07-05 | 2002-09-12 | Christophe Pierrat | Phase shift masking for complex patterns with proximity adjustments |
| JP2010026420A (en) * | 2008-07-24 | 2010-02-04 | Fujitsu Microelectronics Ltd | Method for creating pattern |
| CN106094424A (en) * | 2016-07-22 | 2016-11-09 | 上海华力微电子有限公司 | Redundant pattern adding method with auxiliary figure with low resolution |
| CN108828896A (en) * | 2018-05-31 | 2018-11-16 | 中国科学院微电子研究所 | Add the application of the method and this method of Sub-resolution assist features |
-
2020
- 2020-05-25 CN CN202010446374.1A patent/CN111596521B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020127479A1 (en) * | 2000-07-05 | 2002-09-12 | Christophe Pierrat | Phase shift masking for complex patterns with proximity adjustments |
| JP2010026420A (en) * | 2008-07-24 | 2010-02-04 | Fujitsu Microelectronics Ltd | Method for creating pattern |
| CN106094424A (en) * | 2016-07-22 | 2016-11-09 | 上海华力微电子有限公司 | Redundant pattern adding method with auxiliary figure with low resolution |
| CN108828896A (en) * | 2018-05-31 | 2018-11-16 | 中国科学院微电子研究所 | Add the application of the method and this method of Sub-resolution assist features |
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