CN111474819A - Optical proximity correction method for optimizing MEEF - Google Patents
Optical proximity correction method for optimizing MEEF Download PDFInfo
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- CN111474819A CN111474819A CN202010336815.2A CN202010336815A CN111474819A CN 111474819 A CN111474819 A CN 111474819A CN 202010336815 A CN202010336815 A CN 202010336815A CN 111474819 A CN111474819 A CN 111474819A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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Abstract
The invention provides an optical proximity correction method for optimizing MEEF, which comprises the steps of carrying out OPC on an original layout, and intercepting a layout part of which the MEEF exceeds a threshold value after the OPC is carried out; carrying out pxOPC correction on the intercepted layout part to obtain a mask plate graph; performing pre-correction processing on the corresponding original layout part according to the mask plate graph to obtain a pre-processing target layer; and carrying out OPC correction based on rules and models on the preprocessed target layer to obtain a mask plate layer which finally meets OPC requirements. According to the method, the original graph is moved in a pre-segmentation mode, segmentation and movement of the guide mask graph can be effectively promoted in model-based OPC, and the MEEF optimized mask graph is obtained by adjusting pre-segmentation and movement parameters of a special graph under the condition that a simulated graph is consistent with a target graph.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an optical proximity correction method for optimizing MEEF.
Background
In the photolithography process of ultra-deep submicron integrated circuit fabrication, the phenomenon of deviation of the photolithography pattern from the reticle pattern caused by light wave diffraction and interference is called Optical Proximity Effect (OPE). With the gradual reduction of the process feature size, the optical proximity effect is difficult to avoid in the photolithography process, and the photolithography Enhancement Technology (RET) is generally adopted in the process, and the deformation caused by the optical proximity effect is compensated by appropriately modifying the mask pattern or changing the transparent phase of the pattern, so that the photolithography pattern basically meets the design requirements. Optical Proximity Correction (OPC) is an effective lithography enhancement technology, and the basic idea of the OPC technology is to modify a reticle pattern of an integrated circuit layout in advance so that the modification amount can just compensate for a deviation caused by the Optical Proximity effect. The current OPC basic flow includes: (1) checking the design rule of the original layout; (2) performing rule-based OPC correction; (3) performing OPC correction based on the model; (4) the specification of the final mask pattern is checked.
In the Mask pattern correction process, a Mask Error Enhancement Factor (MEEF) is an important parameter for measuring the influence of the Mask process on the stability of a photoetching pattern, and in addition, the focus of improving the photoetching resolution is also the focus of attention in the process. The Rayleigh's law shows that the resolution (R ═ K)1λ/NA), depth of focus (DOF ═ K)2λ/(NA)2) Wavelength λ, numerical aperture NA, constant K1K2Reducing λ and increasing NA, while improving resolution, can result in reduced depth of field. If by decreasing K1To improve the resolution, the MEEF value is large, and the OPC accuracy is difficult to control. With the reduction of the feature size, the mask patterns of some structures are difficult to consider two parameters of DOF and MEEF, and the difficulty that the MEEF is reduced as much as possible while the DOF is increased becomes the OPC correction process.
In order to improve the MEEF, a common method is to adjust Sub-Resolution Assist Feature (SRAF) in rule-based OPC or adjust the mask pattern in a piecewise manner in model-based OPC, and in most cases, the SRAF and the segmentation have considerable improvement on the mask pattern MEEF. However, when the process node reaches 16 nm or below 14 nm, the size and the spacing of some special patterns are very small, and the MEEF of the mask pattern of the structure is greatly increased due to the difference of the pattern density in the horizontal direction and the pattern density in the vertical direction which are difficult to be added into the SRAF. In addition, in addition to the method of adding SRAFs or segments based on rules, some software such as pxOPC tools in Calibre are also used in OPC correction at present, and the tools can automatically adjust segments and add reasonable SRAFs by an iterative operation method, so that finally, a simulated layer (contourlayer) obtained by a mask pattern is consistent with a target layer (target layer). However, the mask plate patterns obtained by the pxOPC operation are often short in segmentation, so that the manufacturing difficulty of the mask plate is increased, the operation process is complex and time-consuming, and the method is not suitable for OPC correction of the complete layout. Therefore, how to efficiently realize that a simulated pattern layer obtained by the mask pattern is consistent with a target layer and meets the MEEF requirement aiming at structural patterns with special sizes becomes a problem worthy of research in the OPC correction technology.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention provides an optical proximity correction method for optimizing MEEF, which is used to solve the problems in the prior art that in the OPC correction process, for some special structures, the calculated mask pattern segment size of pxOPC is small, the SRAF shape and position are irregular, the calculation is time-consuming, and the requirements of industrial mass production process are not satisfied.
To achieve the above and other related objects, the present invention provides an optical proximity correction method for optimizing MEEF, the method at least comprising the steps of:
firstly, performing OPC (optical proximity correction) on an original layout, and intercepting a layout part of which the MEEF exceeds a threshold value after the OPC is corrected;
secondly, carrying out pxOPC correction on the intercepted layout part to obtain a mask plate graph;
thirdly, performing pre-correction processing on the corresponding original layout part according to the mask plate graph to obtain a pre-processing target layer;
and fourthly, carrying out OPC correction on the preprocessed target layer based on rules and models to obtain a mask plate layer which finally meets OPC requirements.
Preferably, the layout part intercepted in the first step is an OPC target layer including a high MEEF structure, and the OPC target layer is an intermediate layer obtained by performing OPC correction in a rule-based manner for process compensation.
Preferably, in the second step, the pxOPC correction is performed on the intercepted layout part through a pxOPC tool of Calibre software, so as to obtain the mask plate pattern.
Preferably, in the second step, in the process of correcting the intercepted layout part by pxOPC, the correction result of pxOPC is adjusted by setting the parameters of the segmentation of the mask plate, the minimum spacing of the mask plate, and the number of correction cycles.
Preferably, in the second step, the pxOPC parameter is adjusted so that the simulated pattern obtained from the calculated mask plate can be matched with the specification of the OPC target layer pattern or the difference meets the OPC detection error requirement.
Preferably, the method for performing pre-correction processing on the corresponding original layout part according to the mask plate pattern in the third step includes: and selecting a mask plate graph part with the MEEF value meeting or approaching a threshold value according to the mask plate graph, and performing pre-correction processing on a corresponding part in the original layout by taking a segmentation result as a reference to obtain the pre-processing target layer.
Preferably, the difference between the MEEF of the mask pattern part selected in the third step and the expected threshold value is 0-4 nm.
Preferably, the method for performing pre-correction processing on the original layout part in the third step is as follows: and sequentially segmenting and displacing the edges of the original graph part.
Preferably, the length of the segmentation of the edge of the original layout part in the third step meets the requirements of the mask manufacturing process.
Preferably, the moving direction of the edge of the original layout part in step three includes moving to the inside of the graph where the edge is located or moving to the outside of the graph where the edge is located.
Preferably, the range of moving the edge of the original layout part in the third step is-2 nm.
Preferably, in the fourth step, the preprocessing target layer is subjected to OPC correction based on rules and models, so that the simulated pattern obtained by simulating the mask plate layer is substantially matched with the specification of the OPC target layer or the difference meets the OPC error requirement.
As described above, the method for optimizing the optical proximity correction of MEEF according to the present invention has the following advantages: the method combines a pxOPC tool to preprocess an original layout by adopting a pre-segmentation moving mode, and further performs conventional rule and model-based OPC on an obtained preprocessed target layer. By means of the method for moving the original layout in a pre-segmentation mode, on one hand, segmentation can be performed on some special graphs more flexibly, and the method is more direct and convenient. On the other hand, the method can obtain the mask plate graph of the optimized MEEF through pre-segmentation and moving processing. According to the method, the original graph is moved in a pre-segmentation mode, segmentation and movement of the guide mask graph can be effectively promoted in model-based OPC, and the MEEF optimized mask graph is obtained by adjusting pre-segmentation and movement parameters of a special graph under the condition that a simulated graph is consistent with a target graph.
Drawings
FIG. 1 is a schematic flow chart of the method for optimizing the optical proximity correction of MEEF according to the present invention;
FIG. 2 is a schematic diagram of a target layer structure taken in step one of the present invention;
FIG. 3 is a schematic diagram showing a target layer and a mask pattern obtained after a conventional OPC correction on a partial pattern of the minimum repeating unit in FIG. 2, and a simulated pattern obtained through simulation under the condition that the mask pattern is +/-0.5 nm;
FIG. 4 is a schematic diagram showing a mask pattern obtained after a pxOPC correction is performed on the target layer in FIG. 2 as an input layer;
fig. 5 is a schematic diagram showing a target layer and a mask pattern obtained by performing pre-segmentation and displacement on the original layout corresponding to the structure in fig. 2, and performing conventional OPC correction on the target layer and the mask pattern, and a simulated pattern obtained by simulation under the condition that the mask pattern is ± 0.5 nm.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 5. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
The invention provides an optical proximity correction method for optimizing MEEF, as shown in FIG. 1, FIG. 1 is a schematic flow chart of the optical proximity correction method for optimizing MEEF of the invention, in this embodiment, the method includes the following steps:
firstly, performing OPC (optical proximity correction) on an original layout, and intercepting a layout part of which the MEEF exceeds a threshold value after the OPC is corrected; as shown in fig. 2, fig. 2 is a schematic diagram showing a structure of a target layer intercepted in the first step of the present invention, and further, the layout part intercepted in the first step is an OPC target layer including a high MEEF structure, and the OPC target layer is an intermediate layer obtained by performing OPC correction in a rule-based manner for process compensation. That is to say, the layout intercepted in this step is an OPC target layer (target layer) including a high meef structure, and the target layer is an intermediate layer obtained by performing OPC correction in a rule-based manner for process compensation.
Secondly, carrying out pxOPC correction on the intercepted layout part to obtain a mask plate graph; as shown in fig. 3, fig. 3 is a schematic diagram showing a target layer obtained after a conventional OPC correction of the minimal repeating unit partial pattern in fig. 2, a mask pattern, and a simulated pattern obtained through simulation under the condition that the mask pattern is ± 0.5 nm. Fig. 3 shows a partial graph of the minimum repeating unit of the target layer in fig. 2, a target layer 01 obtained after a conventional OPC correction, a mask graph 02, and a simulation graph 03 of the mask graph, where the simulation graph 03 includes two sub-graphs, that is, two contour graphs overlapping each other and having different sizes in fig. 3, one of the two sub-graphs having a larger outline is represented as a simulation graph obtained by simulating the mask graph under a condition of a larger size of 0.5nm, and the other sub-graph having a smaller outline is represented as a simulation graph obtained by simulating the mask graph under a condition of a smaller size of 0.5 nm. And in the second step, pxOPC correction is performed on the intercepted layout part, that is, pxOPC correction is performed on the layout part (that is, the target layer 01 obtained after regular OPC correction in the conventional OPC correction in fig. 3) of which the MEEF exceeds the threshold value after the OPC correction obtained in the first step, so as to obtain a mask plate pattern, as shown in fig. 4, fig. 4 shows a mask plate pattern schematic diagram obtained after pxOPC correction is performed on the target layer in fig. 2 as an input layer, that is, mask plate pattern 04 is obtained through pxOPC correction in the second step. Further, in the second step, the pxOPC is carried out on the intercepted layout part through a pxOPC tool of Calibre software to obtain the mask plate graph. And further, in the process of carrying out pxOPC correction on the intercepted layout part in the second step, adjusting a correction result of the pxOPC by setting parameters of segmentation of a mask plate, a minimum spacing of the mask plate and the number of correction cycles. Furthermore, in the second step, the pxOPC parameters are adjusted so that the simulated pattern obtained by the calculated mask plate can be matched with the specification of the OPC target layer pattern or the difference meets the OPC detection error requirement.
Thirdly, performing pre-correction processing on the corresponding original layout part according to the mask plate graph to obtain a pre-processing target layer; as shown in fig. 5, fig. 5 is a schematic diagram showing a target layer and a mask pattern obtained by performing pre-segmentation and displacement on the original layout corresponding to the structure in fig. 2 to obtain a pre-processed target layer, and then performing conventional OPC correction on the pre-processed target layer, and a simulated pattern obtained by simulation under the condition that the mask pattern is ± 0.5 nm. That is, in the third step, the corresponding original layout part is subjected to the pre-correction processing according to the mask pattern 04 in fig. 4, so as to obtain the pre-processing target layer 05 in fig. 5.
Furthermore, the method for performing pre-correction processing on the corresponding original layout part according to the mask plate graph in the third step comprises the following steps: and selecting a mask plate graph part with the MEEF value meeting or approaching a threshold value according to the mask plate graph 04, and performing pre-correction processing on a corresponding part in the original layout by taking a segmentation result as reference to obtain the pre-processing target layer 06. And further, the difference between the MEEF of the mask plate pattern part selected in the third step and the expected threshold value is 0-4 nm. Furthermore, the method for performing pre-correction processing on the original layout part in the third step comprises the following steps: sequentially segmenting and displacing the edge of the original graph part, wherein in the third step, the moving direction of the edge of the original layout part includes moving the edge to the inside of the graph where the edge is located or moving the edge to the outside of the graph where the edge is located (obtaining the segmented and displaced preprocessing target layer 05 as shown in fig. 5). And in the third step, the moving range of the edge of the original layout part is-2 nm.
Further, the length of the segmentation of the edge of the original layout part in the third step meets the requirements of the mask manufacturing process.
And fourthly, carrying out OPC correction on the preprocessed target layer based on rules and models to obtain a mask plate layer which finally meets OPC requirements. As shown in fig. 5, the preprocessing target layer 05 is subjected to OPC correction based on rules and models, so as to obtain a mask plate layer 06 that finally meets OPC requirements. Further, in the fourth step, the preprocessing target layer 05 is subjected to OPC correction based on rules and models, so that the simulated pattern 07 obtained by simulating the mask plate layer is basically matched with the specification of the OPC target layer or the difference meets the OPC error requirement. The simulation pattern 07 includes two sub-patterns, that is, two contour patterns overlapping each other and having different sizes in fig. 5, one of the two sub-patterns having a larger contour represents a simulation pattern obtained by simulating the mask pattern at a larger size of 0.5nm, and the other sub-pattern having a smaller contour represents a simulation pattern obtained by simulating the mask pattern at a smaller size of 0.5 nm.
As shown in fig. 2, a part of the intercepted pattern is an OPC target layer (targetlayer) of an SRAM area in a layout of a certain layer in a middle-stage process, in the structure, the horizontal pitch between the left and right symmetric patterns is small, but the pitch in the vertical direction is large, and the line width in the horizontal direction is larger than that in the vertical direction. With this structure, the difficulty of OPC correction is: the pattern has different spacing density degrees and line width lengths in the horizontal direction and the vertical direction, the line width in the horizontal direction is larger, the spacing is smaller, the MEEF of the mask plate pattern obtained through OPC correction in the horizontal direction exceeds a threshold value, the mask plate size change has large influence on the photoetching pattern, the simulated pattern is not matched with the target layer pattern, and the like.
Fig. 3 is a portion of the minimum repeating unit structure in the SRAM region of fig. 2. And carrying out rule-based OPC correction on the mask pattern to obtain a target layer pattern (target), carrying out model-based OPC correction on the target layer pattern to obtain a mask pattern, and carrying out simulation on the mask pattern under a model condition to obtain a simulation pattern. Changing the model condition to obtain corresponding simulation pattern, measuring the simulation pattern size and the mask pattern variation size, and obtaining the mask pattern variation size according to the formula MEEF ═ Δ S1/ΔS2Δ (ADI) CD/Δ (Mask) CD ≈ 10, which MEEF value is very high compared to the specification in the conventional process. In a conventional OPC correction method, a Sub-resolution assist Feature (SRAF) is usually added to a target pattern in a rule-based OPC correction process, the pattern is segmented with respect to the target pattern and an SARF in a model-based OPC correction process, and then an iterative calculation is performed according to a deviation result feedback of a simulated pattern and the target pattern to adjust the segmented displacement by itself, thereby finally obtaining a mask pattern. In general, for mask patterns with a high MEEF, the MEEF can be optimized by shortening the segments, adding SRAF, and the like. However, for some special structures, such as the structure in the SRAM area in this case, since the horizontal line width itself is small, the number of segments is limited, and SRAFs are added in the vertical direction voids on the basis of rules, so that the shape of the mask pattern is limited during model-based OPC correction, the dummy pattern does not match the target pattern well, and MEEF is high. The pxOPC tool can adjust the setting of segmentation and SRAF at the same time, and the setting is obtained by a continuous iterative operation methodTo the mask pattern. Although the pxOPC can optimize MEEF and other problems to a certain extent, the calculated mask plate graph has small segment size, irregular SRAF shape and position, time-consuming calculation and can not meet the requirement of industrial large-scale production process.
The method comprises the steps of intercepting a target layer of a structural graph containing a high MEEF value in an SRAM area, wherein the size of the intercepted target layer is not smaller than 5 × 5 mu m, carrying out OPC correction on the target layer by adopting a pxOPC tool of Calibre software, and obtaining a result shown in fig. 4. the corrected mask graph is segmented and refined from the pxOPC result, the original MEEF value is reduced to a certain extent but still exceeds an expected threshold value.
For the structural graph in the embodiment, the original layout is segmented and displaced in advance to form a new target layer, and then OPC based on rules and models is performed, so that the shape of the final mask graph can be controlled more flexibly, and the MEEF of the mask graph is optimized. The method does not need to modify complex OPC script parameters, combines the advantages of a pxOPC tool, avoids the defects of time consumption of the pxOPC, complex mask plate preparation process and the like, is simple and flexible in processing method, efficiently reduces the influence of mask plate process errors on photoetching graphs, and improves OPC correction precision.
In summary, the invention combines the pxOPC tool to preprocess the original layout by a pre-segmentation moving method, and further performs the conventional rule and model-based OPC correction on the obtained preprocessed target layer. By means of the method for moving the original layout in a pre-segmentation mode, on one hand, segmentation can be performed on some special graphs more flexibly, and the method is more direct and convenient. On the other hand, the method can obtain the mask plate graph of the optimized MEEF through pre-segmentation and moving processing. According to the method, the original graph is moved in a pre-segmentation mode, segmentation and movement of the guide mask graph can be effectively promoted in model-based OPC, and the MEEF optimized mask graph is obtained by adjusting pre-segmentation and movement parameters of a special graph under the condition that a simulated graph is consistent with a target graph. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (12)
1. An optical proximity correction method for optimizing MEEF, characterized in that the method at least comprises the following steps:
firstly, performing OPC (optical proximity correction) on an original layout, and intercepting a layout part of which the MEEF exceeds a threshold value after the OPC is corrected;
secondly, carrying out pxOPC correction on the intercepted layout part to obtain a mask plate graph;
thirdly, performing pre-correction processing on the corresponding original layout part according to the mask plate graph to obtain a pre-processing target layer;
and fourthly, carrying out OPC correction on the preprocessed target layer based on rules and models to obtain a mask plate layer which finally meets OPC requirements.
2. The method of claim 1, wherein the method of optimizing the MEEF comprises: and the part of the layout intercepted in the step one is an OPC target layer containing a high MEEF structure, and the OPC target layer is an intermediate layer obtained by performing OPC correction on process compensation in a rule-based mode.
3. The method of claim 1, wherein the method of optimizing the MEEF comprises: and in the second step, the pxOPC is carried out on the intercepted layout part through a pxOPC tool of Calibre software to obtain the mask plate graph.
4. The method of claim 3, wherein the MEEF optimizing optical proximity correction method comprises: and in the second step, in the process of carrying out pxOPC correction on the intercepted layout part, adjusting the correction result of the pxOPC by setting the segmentation of the mask plate, the minimum spacing of the mask plate and the parameters of correction cycle times.
5. The method of claim 4, wherein the MEEF optimizing optical proximity correction method comprises: and adjusting the pxOPC parameters in the second step to enable the simulated graphics obtained by the calculated mask plate to be matched with the specifications of the OPC target layer graphics or the difference to meet the requirements of OPC detection errors.
6. The method of claim 1, wherein the method of optimizing the MEEF comprises: the method for performing pre-correction processing on the corresponding original layout part according to the mask plate graph in the third step comprises the following steps: and selecting a mask plate graph part with the MEEF value meeting or approaching a threshold value according to the mask plate graph, and performing pre-correction processing on a corresponding part in the original layout by taking a segmentation result as a reference to obtain the pre-processing target layer.
7. The method of claim 6, wherein the MEEF optimizing optical proximity correction method comprises: and the difference between the MEEF of the mask plate pattern part selected in the third step and the expected threshold value is 0-4 nm.
8. The method of claim 1, wherein the method of optimizing the MEEF comprises: the method for pre-correcting the original layout part in the third step comprises the following steps: and sequentially segmenting and displacing the edges of the original graph part.
9. The method of claim 8, wherein the method comprises: and in the third step, the length of the segmentation of the edge of the original layout part meets the requirement of the mask manufacturing process.
10. The method of claim 8, wherein the method comprises: and in the third step, the moving direction of the edge of the original layout part comprises moving towards the inside of the graph where the edge is located or moving towards the outside of the graph where the edge is located.
11. The method of claim 1, wherein the method of optimizing the MEEF comprises: and in the third step, the moving range of the edge of the original layout part is-2 nm.
12. The method of claim 1, wherein the method of optimizing the MEEF comprises: and in the fourth step, performing OPC correction based on rules and models on the preprocessed target layer, so that the simulated graph obtained by simulating the mask plate layer is basically matched with the specification of the OPC target layer or the difference meets OPC error requirements.
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| CN113376955A (en) * | 2021-06-29 | 2021-09-10 | 上海华力微电子有限公司 | Method for repairing OPC hot spot of through hole layer |
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