CN110187600B - Method for adding SRAF (sequence related analysis) according to rules - Google Patents
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- CN110187600B CN110187600B CN201910477251.1A CN201910477251A CN110187600B CN 110187600 B CN110187600 B CN 110187600B CN 201910477251 A CN201910477251 A CN 201910477251A CN 110187600 B CN110187600 B CN 110187600B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
Abstract
The invention provides a method for adding SRAF according to rules, which relates to the technical field of semiconductors and can improve the photoetching resolution. The method comprises the following steps: acquiring a target graph and determining a projection area; selecting an SRAF rule according to the projection area, and adding a first sub-resolution auxiliary graph in the projection area based on the SRAF rule; performing conflict cleaning on the first sub-resolution auxiliary graph; determining a growth area according to the position of the sub-target pattern, the line width of the sub-target pattern, a second preset distance between the sub-target pattern and a second sub-resolution auxiliary pattern to be formed, the line width of the second sub-resolution auxiliary pattern to be formed and a third preset distance between the second sub-resolution auxiliary pattern to be formed and the first sub-resolution auxiliary pattern; removing a portion of the first sub-resolution auxiliary pattern located in the growth region; and forming the second sub-resolution auxiliary graph in the growth area according to the position of the sub-target graph and the line width of the sub-target graph.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for adding SRAF according to rules.
Background
With the gradual reduction of the size of the layout graph, the requirement on the photoetching resolution ratio is higher and higher in the manufacturing process of the integrated circuit.
In order to obtain a higher lithographic Resolution, a layout target pattern needs to be corrected, and a Sub-Resolution Assist pattern (SRAF for short) is added around the target pattern, so that in an exposure process, the intensity of light received by a photoresist corresponding to a sparsely arranged part in the target pattern is substantially equal to the intensity of light received by a photoresist corresponding to a densely arranged part in the target pattern.
The prior art typically adds sub-resolution assist features using either a model-based approach or an SRAF rule-based approach. However, for a chip design, the data of the target pattern is too large, and adding the sub-resolution auxiliary pattern by using a model-based method is too time-consuming. Therefore, the current method mainly relies on the SRAF rule-based method to add sub-resolution auxiliary patterns.
For the existing method for adding the sub-resolution auxiliary graph based on the SRAF rule, a small amount of sub-resolution auxiliary graphs for testing and the experience of an engineer are obtained according to a partial model-based method, so that a rule menu for adding the sub-resolution auxiliary graphs is provided. And adding a sub-resolution auxiliary graph for the whole target graph according to the rule menu.
However, the sub-resolution auxiliary graphics added in this way have problems of image overlapping, too close distance between images, mutual misalignment between images, and the like. These problems still affect the lithographic resolution.
Disclosure of Invention
The invention provides a method for adding SRAF according to rules, which can improve the photoetching resolution.
In order to achieve the purpose, the invention adopts the following technical scheme:
there is provided a method of adding SRAFs according to rules, comprising: acquiring a target graph and determining a projection area; the target graph comprises a plurality of sub-target graphs; an SRAF rule is selected according to the projection area, and a first sub-resolution auxiliary graphic is added in the projection area based on the SRAF rule.
And performing conflict cleaning on the first sub-resolution auxiliary patterns so that a plurality of first sub-resolution auxiliary patterns which are staggered within a first preset distance along a direction perpendicular to the extending direction of the sub-target patterns are rearranged to the same vertical line.
Determining a growth area according to the position of the sub-target pattern, the line width of the sub-target pattern, a second preset distance between the sub-target pattern and a second sub-resolution auxiliary pattern to be formed, the line width of the second sub-resolution auxiliary pattern to be formed and a third preset distance between the second sub-resolution auxiliary pattern to be formed and the first sub-resolution auxiliary pattern; the growth regions are located at both ends of the sub-target patterns and adjacent to the corresponding sub-target patterns.
Removing a portion of the first sub-resolution auxiliary pattern located in the growth area.
Forming a second sub-resolution auxiliary graph in the growth area according to the position of the sub-target graph and the line width of the sub-target graph; each growth area is internally provided with a second sub-resolution auxiliary graph; each second sub-resolution auxiliary graph corresponds to one end of a sub-target graph, the second sub-resolution auxiliary graph and one end of the corresponding sub-target graph are arranged oppositely, and the extending direction of the second sub-resolution auxiliary graph is parallel to the line width direction of one end of the corresponding sub-target graph; the second resolution auxiliary pattern is arranged opposite to the sub-target pattern corresponding to the second resolution auxiliary pattern.
Optionally, after forming the second sub-resolution auxiliary pattern, the method of adding SRAFs further includes: performing collision cleaning on a portion of the first sub-resolution auxiliary pattern adjacent to the growth region to remove the portion of the first sub-resolution auxiliary pattern adjacent to the growth region, or to enlarge the portion of the first sub-resolution auxiliary pattern adjacent to the growth region; and the distance between the amplified first sub-resolution auxiliary graph and the second sub-resolution auxiliary graph and the distance between the amplified first sub-resolution auxiliary graph and the other first sub-resolution auxiliary graphs are larger than or equal to a third preset distance.
Optionally, if the line widths of the first sub-resolution auxiliary patterns are the same, performing collision cleaning on the first sub-resolution auxiliary patterns, so that the first sub-resolution auxiliary patterns staggered within a first preset distance in a direction perpendicular to the extending direction of the sub-target patterns are rearranged to a same vertical line, including: and moving the position of at least one first sub-resolution auxiliary pattern so that a plurality of first sub-resolution auxiliary patterns are arranged on the same vertical line in the direction which is within a first preset distance away from the extending direction of the sub-target patterns and is perpendicular to the extending direction of the sub-target patterns 11.
Optionally, the length of the growth region is the sum of a second preset distance, the line width of the second sub-resolution auxiliary pattern, and a third preset distance along the extending direction of the sub-target pattern; and/or the width of the growth region is the sum of the length of the second sub-resolution auxiliary pattern corresponding to the growth region and a third preset distance which is 2 times the length of the second sub-resolution auxiliary pattern along the line width direction of the sub-target pattern along the direction perpendicular to the extending direction of the sub-target pattern 11.
Optionally, the length of the second sub-resolution auxiliary pattern is 0.8 to 2 times the line width of the sub-target pattern corresponding to the second sub-resolution auxiliary pattern.
Optionally, the line width of the sub-target pattern is one of 32nm, 38nm and 45 nm; and/or the line width of the first sub-resolution auxiliary graph and the line width of the second sub-resolution auxiliary graph are 15-30nm.
Optionally, the second preset distance is 40 to 120nm; and/or the third preset distance is 15 to 30nm.
The embodiment of the invention provides a method for adding SRAF (static random access function) according to rules, which comprises the steps of firstly forming a first sub-resolution auxiliary graph, and carrying out conflict processing on the first sub-resolution auxiliary graph so as to enable a plurality of first sub-resolution auxiliary graphs which are staggered within a first preset distance along the direction vertical to the extending direction of sub-target graphs to be rearranged to the same vertical line; and determining a growth region, and forming a second sub-resolution auxiliary pattern in the growth region, wherein the distance between the second sub-resolution auxiliary pattern and the sub-target pattern is a second preset distance, and the distance between the second sub-resolution auxiliary pattern and the first sub-resolution auxiliary pattern is a third preset distance. Thus, the distance between any sub-target pattern, the first sub-resolution auxiliary pattern and the second sub-resolution auxiliary pattern is within the preset range, and the problems of image overlapping, too short distance between images, mutual dislocation between images and the like in the prior art can be avoided, so that the preparation process of the mask pattern is simplified, and the photoetching resolution can be improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the prior art descriptions will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic flowchart of a method for adding SRAFs according to rules according to an embodiment of the present invention;
fig. 2 is a schematic process diagram of a method for adding an SRAF according to a rule according to an embodiment of the present invention;
fig. 3 is a schematic process diagram of a method for adding an SRAF according to a rule according to an embodiment of the present invention;
fig. 4 is a schematic process diagram of a method for adding SRAFs according to rules according to an embodiment of the present invention;
fig. 5 is a schematic process diagram of a method for adding an SRAF according to a rule according to an embodiment of the present invention;
fig. 6 is a schematic process diagram of a method for adding an SRAF according to a rule according to an embodiment of the present invention;
fig. 7 is a process diagram of a method for adding SRAFs according to rules according to an embodiment of the present invention;
fig. 8 is a process diagram of a method for adding SRAFs according to rules according to an embodiment of the present invention;
fig. 9 is a schematic process diagram of a method for adding an SRAF according to a rule according to an embodiment of the present invention;
fig. 10 is a schematic process diagram of a method for adding an SRAF according to a rule according to an embodiment of the present invention.
Reference numerals are as follows:
11-sub-target graph; 12-a first sub-resolution auxiliary graphic; 13-a second sub-resolution auxiliary pattern; 23-growing region.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the present invention provides a method for adding an SRAF according to a rule, which is implemented by the following steps, as shown in fig. 1:
s11, as shown in FIGS. 2-3, acquiring a target graph and determining a projection area; the target figure comprises a plurality of sub-target figures 11. As shown in fig. 5, an SRAF rule is selected according to the projection area, and the first sub-resolution auxiliary pattern 12 is added in the projection area based on the SRAF rule.
Here, part of the sub-target figure 11 includes an isolated figure; the projection area includes a first area (21a to 21c in fig. 3) and a second area (22a to 22c in fig. 4); along the direction perpendicular to the extending direction of the sub-target patterns 11, the first area is an area between two adjacent sub-target patterns 11; the second region is a blank region adjacent to the isolated pattern in a direction perpendicular to the extending direction of the sub-target pattern 11.
In addition, any one of the sub-object patterns 11 may extend in one direction, for example, the sub-object pattern 11 is rectangular; alternatively, one sub-target pattern 11 may extend in multiple directions, for example, the sub-target pattern 11 is L-shaped.
For convenience of illustration, the sub-target figures are illustrated as rectangles below.
First, it should be noted that, as will be understood by those skilled in the art, for any one sub-target pattern 11, if there is no sub-target pattern 11 adjacent to the sub-target pattern within a certain distance range (for example, within 2 μm) in a direction perpendicular to the extending direction of the sub-target pattern 11, the sub-target pattern 11 is an isolated pattern. For example, as shown in fig. 4, the sub-target pattern 11a is on the side away from the sub-target pattern 11c, and there are no other sub-target patterns, so that the sub-target pattern 11a is an isolated pattern with respect to the sub-target pattern 11b and the sub-target pattern 11 c. Since the sub-target pattern 11a is adjacent to the sub-target pattern 11c and is adjacent to the sub-target pattern 11b and the sub-target pattern 11c, the second area corresponding to the sub-target pattern 11a is 22a.
If any one of the sub-target patterns 11 does not have a sub-target pattern 11 adjacent to a part of the sub-target pattern 11 in a direction perpendicular to the extending direction of the sub-target pattern 11, the part is an isolated pattern. For example, the part of the sub-target pattern 11b that faces away from the sub-target pattern 11a and is not adjacent to the sub-target pattern 11c in fig. 4 is an isolated pattern. Since the sub-target pattern 11b is close to the sub-target pattern 11c, and a part of the sub-target pattern 11b is adjacent to the sub-target pattern 11c, the second region corresponding to the part of the sub-target pattern 11b that is not adjacent to the sub-target pattern 11c is 22c.
Meanwhile, it can also be determined in the same manner that the second area further includes the second area 22b and the second area 22d in fig. 3, which are not described herein again.
Secondly, in the direction perpendicular to the extending direction of the sub-target patterns 11, the blank regions adjacent to the isolated pattern may be all used as the second regions; alternatively, a part of a blank region adjacent to the isolated pattern in a direction perpendicular to the extending direction of the sub-target patterns 11 is used as the second region.
If a part of the blank area adjacent to the isolated pattern is used as a second area along a direction perpendicular to the extending direction of the sub-target patterns 11, optionally, the distance between the edge of the second area adjacent to any one isolated pattern, which is far away from the isolated pattern, and the isolated pattern is 1.3 to 2 μm.
Illustratively, the distance between the edge of the second region adjacent to any one of the isolated patterns and the isolated pattern is 1.3 μm, 1.56 μm, or 2 μm.
Third, the line width of the plurality of sub-target patterns 11 is not limited, and it can be applied to a chip of an arbitrary node.
For example, if a 28-node chip is used, the minimum line width of each sub-target pattern 11 is 45nm.
If a 7-node chip is used, the minimum line width of each sub-target pattern 11 is 32nm.
If a 14-node chip is used, the minimum line width of each sub-target pattern 11 is 38nm.
The sub-target patterns 11 under the same node provided by each provider have different line widths, and the embodiment of the present invention is only exemplified by the minimum line width.
Fourthly, the position relationship between the plurality of sub-target graphs 11 is not limited, and the position relationship between the plurality of sub-target graphs is related to the user requirement, which is not particularly limited in the embodiment of the present invention.
Fifth, appropriate SRAF rules can be selected based on model-based methods, through the SRAF results of the test patterns, and the experience of the engineer.
Sixth, the line width of the first sub-resolution auxiliary pattern 12 is not limited, and specifically, the line width of the first sub-resolution auxiliary pattern 12 is related to the actual design requirement.
Illustratively, the line width of the first sub-resolution auxiliary pattern 12 is 15 to 30nm.
Specifically, the line width of the sub-object pattern 11 is 45nm, the distance between the sub-object pattern 11a and the sub-object pattern 11b is 200nm, the distance between the sub-object pattern 11b and the sub-object pattern 11c is 120nm, the distance between the sub-object pattern 11a and the sub-object pattern 11c is 320nm, and the line width of the first sub-resolution auxiliary pattern 12 is 30nm.
A first sub-resolution auxiliary pattern 12 is formed in the area directly opposite to the area between the sub-target pattern 11a and the sub-target pattern 11b, and the distance between the first sub-resolution auxiliary pattern 12 and the area between the sub-target pattern 11a and the area between the first sub-resolution auxiliary pattern 12 and the area between the sub-target pattern 11b are both 85nm.
Two first sub-resolution auxiliary patterns 12 are formed in the regions directly opposed between the sub-object patterns 11a and 11 c. Wherein, the distance between the first sub-resolution auxiliary pattern 12 close to the sub-target pattern 11a and the sub-target pattern 11a in the two first sub-resolution auxiliary patterns 12 is 80nm; the distance between the first sub-resolution auxiliary pattern 12 of the two first sub-resolution auxiliary patterns 12 close to the sub-target pattern 11c and the sub-target pattern 11c is 80nm; the distance between the two first sub-resolution auxiliary patterns 12 is 100nm.
N first sub-resolution auxiliary patterns 12 are formed in a second region 22a corresponding to the sub-target patterns 11a, and the distances between the edge of the sub-target pattern 11a departing from the target pattern 11c and the n first sub-resolution auxiliary patterns 12 are 90nm and 135nm 8230.
N first sub-resolution auxiliary patterns 12 are formed in a second region 22b corresponding to the sub-target patterns 11b, and the distances between the edge of the sub-target pattern 11b departing from the target pattern 11c and the n first sub-resolution auxiliary patterns 12 are 90nm and 135nm 8230.
N first sub-resolution auxiliary patterns 12 are formed in a second region 22c corresponding to the sub-target pattern 11b, and the distances between the edge of the sub-target pattern 11b away from the target pattern 11a and the n first sub-resolution auxiliary patterns 12 are 90nm and 135nm 8230, respectively.
N first sub-resolution auxiliary patterns 12 are formed in the second region 22d corresponding to the sub-target pattern 11c, and the distances between the edge of the sub-target pattern 11c departing from the target pattern 11a and the n first sub-resolution auxiliary patterns 12 are 90nm and 135nm 8230, respectively.
S12, as shown in fig. 6, the first sub-resolution auxiliary patterns 12 are subjected to collision cleaning so that the plurality of first sub-resolution auxiliary patterns 12 shifted within the first preset distance in the direction perpendicular to the extending direction of the sub-target patterns 11 are rearranged on the same vertical line.
For example, as shown in fig. 6, taking the first sub-resolution auxiliary pattern 12 spaced from the sub-target pattern 11b by 90nm in the second region 22b, the first sub-resolution auxiliary pattern 12 located between the sub-target pattern 11a and the sub-target pattern 11b, and the first sub-resolution auxiliary pattern 12 located between the sub-target pattern 11a and the sub-target pattern 11c and spaced from the sub-target pattern 11a by 80nm, the first sub-resolution auxiliary pattern 12 located between the sub-target pattern 11a and the sub-target pattern 11b is 5nm closer to the direction in which the sub-target pattern 11a points to the sub-target pattern 11b than the other two first sub-resolution auxiliary patterns 12. Therefore, the first sub-resolution auxiliary pattern 12 located between the sub-target pattern 11a and the sub-target pattern 11b may be moved by 5nm along the direction in which the sub-target pattern 11a points to the sub-target pattern 11a, so that the three are located on the same vertical line, and the vertical line is parallel to the extending direction of the sub-target pattern 11.
Of course, other ways may also be adopted to make the three first sub-resolution auxiliary patterns 12 be located on the same vertical line, as long as the distance between the first sub-resolution auxiliary pattern 12 and the target pattern 11 and the distance between the moved first sub-resolution auxiliary pattern 12 and the other first sub-resolution auxiliary patterns 12 meet the design requirement, which is not limited in the embodiment of the present invention.
As shown in fig. 6, taking the first sub-resolution auxiliary pattern 12 in the second region 22c spaced from the sub-target pattern 11b by 135nm and the first sub-resolution auxiliary pattern 12 in the second region 22c spaced from the sub-target pattern 11c by 90nm as an example, the distance between the two patterns is close to 15nm. Therefore, it is possible to take the average of the distances between the two and simultaneously move the two first sub-resolution auxiliary patterns 12 so that they are on the same vertical line parallel to the extending direction of the sub-target patterns 11.
Of course, other ways may also be adopted to make the two first sub-resolution auxiliary patterns 12 be located on the same vertical line, as long as the distance between the first sub-resolution auxiliary pattern 12 and the target pattern 11 and the distance between the moved first sub-resolution auxiliary pattern 12 and the other first sub-resolution auxiliary patterns 12 meet the design requirement, which is not limited in the embodiment of the present invention.
In the above description, the plurality of first sub-resolution auxiliary patterns 12 after moving are located on the same vertical line, and refer to: the central axes of the plurality of first sub-resolution auxiliary patterns 12 after the movement, which are parallel to the extending direction of the sub-target patterns 11, are located on the same vertical line.
Since the line widths of all the first sub-resolution auxiliary patterns 12 are 30nm, the two ends of the first sub-resolution auxiliary patterns 12 that are in contact with each other after the shift are completely overlapped.
In step S12, the first sub-resolution auxiliary patterns 12 that violate the mask manufacturing rule are translated, rearranged, and the like so as to satisfy the mask manufacturing rule.
In this way, for example, the collision cleaning may be performed on the plurality of first sub-resolution auxiliary patterns 12 having the same extending direction and shifted by 15nm or less in the direction perpendicular to the extending direction thereof, so that the plurality of first sub-resolution auxiliary patterns 12 are rearranged on the same vertical line.
I.e. the first predetermined distance is 15nm.
S13, as shown in fig. 7 and 9, determining a growth area 23 according to the position of the sub-target pattern 11, the line width of the sub-target pattern 11, a second preset distance between the sub-target pattern 11 and a second sub-resolution auxiliary pattern 13 to be formed, the line width of the second sub-resolution auxiliary pattern 13 to be formed, and a third preset distance between the second sub-resolution auxiliary pattern 13 to be formed and the first sub-resolution auxiliary image 12; the growth regions 23 are located at both ends of the sub-target patterns 11 and adjacent to the corresponding sub-target patterns.
It should be noted that, firstly, specific ranges of the second preset distance and the third preset distance are not limited, as long as the second preset distance and the third preset distance meet design requirements.
For example, the second predetermined distance is 40 to 120nm, and the third predetermined distance is 15 to 30nm.
Second, the line width of the second sub-resolution auxiliary pattern 13 is not limited, and in particular, the line width of the second sub-resolution auxiliary pattern 13 is related to the actual design requirement.
For example, the line width of the second sub-resolution auxiliary pattern 13 is 15 to 30nm.
Specifically, along the extending direction of the sub-target patterns 11, the length of the growth region 23 is the sum of the second preset distance, the line width of the second sub-resolution auxiliary pattern 13, and the third preset distance.
For example, taking the line width of the sub-target pattern 11 as 45nm, the second preset distance as 85nm, the third preset distance as 30nm, and the line width of the second sub-resolution auxiliary pattern 13 to be formed as 30nm, the length of the growth area along the extending direction of the sub-target pattern 11 is 85+30 =145nm.
Specifically, the width of the growth region 23 in the direction perpendicular to the extending direction of the sub-target patterns 11 is the sum of the length of the second sub-resolution auxiliary pattern 13 corresponding to the growth region 23 and 2 times the third predetermined distance.
Wherein, the length of the second sub-resolution auxiliary pattern 13 to be formed is 0.8 to 2 times of the line width of the sub-target pattern 11 corresponding to the second sub-resolution auxiliary pattern.
For example, taking the line width of the sub-target pattern 11 as 45nm, the length of the second sub-resolution auxiliary pattern 13 as 1.2 times the line width of the corresponding sub-target pattern 11, and the third preset distance as 30nm as an example, along the extending direction of the sub-target pattern 11, the length of the second sub-resolution auxiliary pattern 13 is 45 × 1.2=54nm; further, the width of the growth region is 54+30 × 2=114nm in the direction perpendicular to the extending direction of the sub-target pattern 11.
S14, as shown in fig. 8, a portion of the first sub-resolution auxiliary pattern 12 located in the growth region 23 is removed.
S15, as shown in FIG. 9, forming a second sub-resolution auxiliary pattern 13 in the growth region 23 according to the position of the sub-target pattern 11 and the line width of the sub-target pattern 11; each growth region is internally provided with a second sub-resolution auxiliary graph; each second sub-resolution auxiliary graph corresponds to one end of a sub-target graph, the second sub-resolution auxiliary graph and one end of the corresponding sub-target graph are arranged oppositely, and the extending direction of the second sub-resolution auxiliary graph is parallel to the line width direction of one end of the corresponding sub-target graph; the second resolution auxiliary pattern is arranged opposite to the sub-target pattern corresponding to the second resolution auxiliary pattern.
First, two ends of each sub-target pattern 11 are respectively provided with a growth region 23, and the sub-target patterns 11 correspond to the growth regions one by one. Therefore, for any one of the sub-target patterns 11, two second sub-resolution auxiliary patterns 13 are corresponding thereto.
Second, the second resolution auxiliary pattern 13 is disposed opposite to the sub-destination pattern 11 corresponding thereto, that is, the center of the second resolution auxiliary pattern 13 and the center of the sub-destination pattern 11 corresponding thereto are on the same vertical line, which is parallel to the extending direction of the sub-destination pattern 11. On this basis, the extending direction of the second sub-resolution auxiliary pattern 13 is perpendicular to the extending direction of the sub-target pattern 11 corresponding thereto.
Of course, if the sub-target patterns 11 are not rectangular, the second sub-resolution auxiliary pattern 13 is disposed opposite to one end of the corresponding sub-target pattern 11, and the extending direction of the second sub-resolution auxiliary pattern 13 is parallel to the line width direction of one end of the corresponding sub-target pattern 11.
The embodiment of the invention provides a method for adding SRAF according to rules, which comprises the steps of firstly forming a first sub-resolution auxiliary graph 12, and carrying out conflict processing on the first sub-resolution auxiliary graph, so that a plurality of first sub-resolution auxiliary graphs 12 which are staggered within a first preset distance along the direction vertical to the extending direction of a sub-target graph 11 are rearranged to the same vertical line; and determining a growth region 23, and forming a second sub-resolution auxiliary pattern 13 in the growth region 23, wherein the distance between the second sub-resolution auxiliary pattern 13 and the sub-target pattern 11 is a second preset distance, and the distance between the second sub-resolution auxiliary pattern 13 and the first sub-resolution auxiliary pattern 12 is a third preset distance. Thus, the distance between any sub-target pattern 11, the first sub-resolution auxiliary pattern 12, and the second sub-resolution auxiliary pattern 13 is within the predetermined range, thereby avoiding the problems of image overlapping, too close distance between images, mutual misalignment between images, and the like in the prior art, simplifying the process of preparing the mask pattern, and improving the photolithography resolution.
Optionally, after forming the second sub-resolution auxiliary pattern 13, the method of adding SRAF further includes: as shown in fig. 10, the part of the first sub-resolution auxiliary pattern 12 adjacent to the growth region 23 is subjected to collision cleaning to remove the part of the first sub-resolution auxiliary pattern 12 adjacent to the growth region 23 or to enlarge the part of the first sub-resolution auxiliary pattern 12 adjacent to the growth region 23; wherein, the distance between the enlarged first sub-resolution auxiliary pattern 12 and the second sub-resolution auxiliary pattern 13 and other first sub-resolution auxiliary patterns 12 is greater than or equal to a third preset distance.
That is, in the process of enlarging the portion of the first sub-resolution auxiliary pattern 12 adjacent to the growth region 23, it is ensured that the distance between the enlarged first sub-resolution auxiliary pattern 12 and the second sub-resolution auxiliary pattern 13 and the other first sub-resolution auxiliary patterns 12 is greater than or equal to the third preset distance.
It should be noted that the process is to enlarge or reduce the first sub-resolution auxiliary pattern which violates the mask manufacturing rule so as to satisfy the mask manufacturing rule.
In the embodiment of the present invention, since the portion of the first sub-resolution auxiliary pattern 12 located in the growth region 23 is removed, the size of the portion of the first sub-resolution auxiliary pattern 12 adjacent to the growth region 23 is very small, and it is difficult for the current mask apparatus to prepare a mask pattern having a very small size. Therefore, the first sub-resolution auxiliary patterns 12 having a very small size may be removed, or the first sub-resolution auxiliary patterns 12 having a very small size may be enlarged.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present invention, and shall cover the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (5)
1. A method for adding SRAFs according to rules, comprising:
acquiring a target graph and determining a projection area; the target graph comprises a plurality of sub-target graphs; selecting an SRAF rule according to the projection area, and adding a first sub-resolution auxiliary graph in the projection area based on the SRAF rule;
if the line widths of the first sub-resolution auxiliary patterns are the same, performing conflict cleaning on the first sub-resolution auxiliary patterns to enable the first sub-resolution auxiliary patterns staggered within a first preset distance along a direction perpendicular to the extending direction of the sub-target patterns to be rearranged to the same vertical line; wherein the first preset distance is 15nm; the conflict cleaning comprises the following steps: moving the position of at least one first sub-resolution auxiliary pattern so that a plurality of first sub-resolution auxiliary patterns are arranged on the same vertical line along the direction which is within a first preset distance of the extending direction of the sub-object patterns and is perpendicular to the extending direction of the sub-object patterns;
determining a growth area according to the position of the sub-target pattern, the line width of the sub-target pattern, a second preset distance between the sub-target pattern and a second sub-resolution auxiliary pattern to be formed, the line width of the second sub-resolution auxiliary pattern to be formed and a third preset distance between the second sub-resolution auxiliary pattern to be formed and the first sub-resolution auxiliary image; the growth areas are positioned at two ends of the sub-target patterns and are adjacent to the sub-target patterns corresponding to the growth areas; the second preset distance is 40-120 nm; the third preset distance is 15-30 nm;
removing a portion of the first sub-resolution auxiliary pattern located in the growth region;
forming the second sub-resolution auxiliary graph in the growth area according to the position of the sub-target graph and the line width of the sub-target graph; each growth region is internally provided with one second sub-resolution auxiliary graph; each second sub-resolution auxiliary graph corresponds to one end of each sub-object graph, the second sub-resolution auxiliary graph is opposite to one end of each sub-object graph corresponding to the second sub-resolution auxiliary graph, and the extending direction of the second sub-resolution auxiliary graph is parallel to the line width direction of one end of each sub-object graph corresponding to the second sub-resolution auxiliary graph.
2. The method of adding SRAFs according to the rule of claim 1, wherein after forming the second sub-resolution auxiliary pattern, the method of adding SRAFs further comprises:
performing collision cleaning on a portion of the first sub-resolution auxiliary pattern adjacent to the growth region to remove the portion of the first sub-resolution auxiliary pattern adjacent to the growth region or to enlarge the portion of the first sub-resolution auxiliary pattern adjacent to the growth region;
and the distance between the amplified first sub-resolution auxiliary graph and the second sub-resolution auxiliary graph and the distance between the amplified first sub-resolution auxiliary graph and the other first sub-resolution auxiliary graphs are respectively larger than or equal to a third preset distance.
3. The method of adding SRAFs according to the rule of claim 1 or 2,
the length of the growing region is the sum of the second preset distance, the line width of the second sub-resolution auxiliary pattern and the third preset distance along the extending direction of the sub-target patterns;
and/or along the line width direction of the sub-target patterns in the direction perpendicular to the extending direction of the sub-target patterns, the width of the growth region is the sum of the length of the second sub-resolution auxiliary pattern corresponding to the growth region and 2 times of the third preset distance.
4. The method of claim 3, wherein the length of the second sub-resolution auxiliary pattern is 0.8-2 times the line width of the sub-target pattern corresponding thereto.
5. The method of claim 1 or 2, wherein the line width of the sub-target pattern is one of 32nm, 38nm and 45 nm;
and/or the line width of the first sub-resolution auxiliary pattern and the line width of the second sub-resolution auxiliary pattern are 15-30 nm.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108828896A (en) * | 2018-05-31 | 2018-11-16 | 中国科学院微电子研究所 | Add the application of the method and this method of Sub-resolution assist features |
| CN109188870A (en) * | 2018-09-30 | 2019-01-11 | 上海华力集成电路制造有限公司 | Optical proximity correction method |
| CN112346294A (en) * | 2020-11-13 | 2021-02-09 | 上海华力集成电路制造有限公司 | Multiple graph sub-resolution auxiliary graph adding method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7001693B2 (en) * | 2003-02-28 | 2006-02-21 | International Business Machines Corporation | Binary OPC for assist feature layout optimization |
| US7451428B2 (en) * | 2005-02-24 | 2008-11-11 | Texas Instruments Incorporated | Merging sub-resolution assist features of a photolithographic mask through the use of a merge bar |
| US7424699B2 (en) * | 2005-06-10 | 2008-09-09 | Texas Instruments Incorporated | Modifying sub-resolution assist features according to rule-based and model-based techniques |
| US7512928B2 (en) * | 2005-08-12 | 2009-03-31 | Texas Instruments Incorporated | Sub-resolution assist feature to improve symmetry for contact hole lithography |
| US7569310B2 (en) * | 2005-12-07 | 2009-08-04 | Intel Corporation | Sub-resolution assist features for photolithography with trim ends |
| US7648803B2 (en) * | 2006-03-27 | 2010-01-19 | Intel Corporation | Diagonal corner-to-corner sub-resolution assist features for photolithography |
| US20090258302A1 (en) * | 2008-04-10 | 2009-10-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sub-resolution assist feature of a photomask |
| JP2011059513A (en) * | 2009-09-11 | 2011-03-24 | Toshiba Corp | Pattern forming method, method for manufacturing mask, and method for manufacturing semiconductor device |
-
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108828896A (en) * | 2018-05-31 | 2018-11-16 | 中国科学院微电子研究所 | Add the application of the method and this method of Sub-resolution assist features |
| CN109188870A (en) * | 2018-09-30 | 2019-01-11 | 上海华力集成电路制造有限公司 | Optical proximity correction method |
| CN112346294A (en) * | 2020-11-13 | 2021-02-09 | 上海华力集成电路制造有限公司 | Multiple graph sub-resolution auxiliary graph adding method |
Non-Patent Citations (1)
| Title |
|---|
| 亚分辨率辅助图形对28纳米密集线条光刻成像的影响;陈权等;《中国集成电路》;20160505(第05期);全文 * |
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