CN110187600A - A method of SRAF is added according to rule - Google Patents
A method of SRAF is added according to rule Download PDFInfo
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- CN110187600A CN110187600A CN201910477251.1A CN201910477251A CN110187600A CN 110187600 A CN110187600 A CN 110187600A CN 201910477251 A CN201910477251 A CN 201910477251A CN 110187600 A CN110187600 A CN 110187600A
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- 238000000034 method Methods 0.000 title claims abstract description 50
- 238000004140 cleaning Methods 0.000 claims abstract description 10
- 238000001259 photo etching Methods 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000002955 isolation Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 5
- 206010057855 Hypotelorism of orbit Diseases 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The present invention provides a kind of method according to rule addition SRAF, is related to technical field of semiconductors, photoetching resolution can be improved.This method comprises: obtaining targeted graphical, and determine view field；SRAF rule is selected according to view field, and the first Sub-resolution assist features are added in view field based on SRAF rule；Conflict cleaning is carried out to the first Sub-resolution assist features；According to the third pre-determined distance between the line width and the second Sub-resolution assist features to be formed and the first Subresolution assistant images of the second pre-determined distance, the second Sub-resolution assist features to be formed between the position of sub-goal figure, the line width of sub-goal figure, sub-goal figure and the second Sub-resolution assist features to be formed, growth district is determined；Remove the part for being located at growth district in the first Sub-resolution assist features；According to the position of sub-goal figure and the line width of sub-goal figure, second Sub-resolution assist features are formed in growth district.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of methods according to rule addition SRAF.
Background technique
Requirement with the gradually diminution of layout patterns size, in ic manufacturing process, to photoetching resolution
It is higher and higher.
In order to obtain higher photoetching resolution, need to be modified domain targeted graphical, while in targeted graphical week
Addition Sub-resolution assist features (Sub Resolution Assist Feature, abbreviation SRAF) is enclosed, in the process of exposure
In, so that the intensity of illumination that photoresist corresponding with sparse part of arranging in targeted graphical receives, substantially equal to and mesh
The intensity of illumination that the corresponding photoresist in part of comparatively dense of arranging in shape of marking on a map receives.
The prior art usually utilizes the method based on model or the method based on SRAF rule, addition Subresolution auxiliary figure
Shape.However, the data of targeted graphical are excessively huge for the design of a chip, added using the method based on model
Sub-resolution assist features are excessively time-consuming.Therefore, the method addition Subresolution auxiliary based on SRAF rule is relied primarily at present
Figure.
Sub-resolution assist features are added using the method based on SRAF rule for existing, are that basis is based partially on mould
The method of type obtains the experience of a small amount of Sub-resolution assist features and engineer for testing, adds to provide one
Add the rule menu of Sub-resolution assist features.It is that entire targeted graphical adds Subresolution auxiliary figure further according to the rule menu
Shape.
However, the Sub-resolution assist features added in this way can have image overlapping, phase between hypotelorism, image between image
Mutually the problems such as dislocation.These problems still will affect photoetching resolution.
Summary of the invention
The present invention provides a kind of method according to rule addition SRAF, and photoetching resolution can be improved.
In order to achieve the above objectives, the present invention adopts the following technical scheme:
There is provided a kind of method according to rule addition SRAF, comprising: obtain targeted graphical, and determine view field；Targeted graphical
Including multiple sub-goal figures；SRAF rule is selected according to view field, and adds the in view field based on SRAF rule
One Sub-resolution assist features.
Conflict cleaning is carried out to the first Sub-resolution assist features, so that along vertical with the extending direction of sub-goal figure
Direction multiple first Sub-resolution assist features within the first pre-determined distance that are staggered reset to same vertical line.
According to the position of sub-goal figure, the line width of sub-goal figure, sub-goal figure and the to be formed second sub- resolution
The line width of the second pre-determined distance, the second Sub-resolution assist features to be formed between rate secondary graphics and to be formed
Third pre-determined distance between second Sub-resolution assist features and the first Subresolution assistant images, determines growth district；It is raw
Long region is located at the both ends of sub-goal figure and abuts with corresponding sub-goal figure.
Remove the part for being located at growth district in the first Sub-resolution assist features.
According to the position of sub-goal figure and the line width of sub-goal figure, the second sub- resolution is formed in growth district
Rate secondary graphics；Second Sub-resolution assist features are equipped in each growth district；Each second Subresolution auxiliary figure
Shape is corresponding with one end of sub-goal figure, one end face of the second Sub-resolution assist features and corresponding sub-goal figure
Setting, and its extending direction is parallel with the corresponding line width direction of one end of sub-goal figure；Second resolution auxiliary figure
Shape and the setting of corresponding sub-goal figure face.
Optionally, after forming the second Sub-resolution assist features, the method for adding SRAF further include: to first sub- point
The part adjacent with growth district carries out the cleaning that conflicts in resolution secondary graphics, with remove in the first Sub-resolution assist features with
The adjacent part of growth district, alternatively, will amplify in the first Sub-resolution assist features with the adjacent part of growth district；Its
In, amplified first Sub-resolution assist features and the second Sub-resolution assist features and other first Subresolutions auxiliary are schemed
The distance between shape is greater than or equal to third pre-determined distance.
Optionally, if the line width of multiple first Sub-resolution assist features is identical, to the first Sub-resolution assist features
Conflict cleaning is carried out, it is more within the first pre-determined distance so that the edge direction vertical with the extending direction of sub-goal figure is staggered
A first Sub-resolution assist features are reset to same vertical line, comprising: at least one mobile first Sub-resolution assist features
Position so that being staggered within the first pre-determined distance and sub-goal along the direction vertical with the extending direction of sub-goal figure
Multiple first Sub-resolution assist features in the vertical direction of the extending direction of figure 11 are arranged to same vertical line.
Optionally, along the extending direction of sub-goal figure, the length of growth district is the second pre-determined distance, the second sub- resolution
The sum of the line widths of rate secondary graphics, third pre-determined distance；And/or along the direction vertical with the extending direction of sub-goal figure 11
The line width direction of sub-goal figure, the width of growth district are the second Sub-resolution assist features corresponding with the growth district
Length and 2 times of the sum of third pre-determined distance.
Optionally, the length of the second Sub-resolution assist features is the 0.8 ~ 2 of the line width of corresponding sub-goal figure
Times.
Optionally, the line width of sub-goal figure is one of 32nm, 38nm, 45nm；And/or first Subresolution it is auxiliary
The line width of the line width and the second Sub-resolution assist features that help figure is 15 ~ 30nm.
Optionally, the second pre-determined distance is 40 ~ 120nm；And/or third pre-determined distance is 15 ~ 30nm.
The embodiment of the present invention provides a kind of method according to rule addition SRAF, is initially formed the first Subresolution auxiliary figure
Shape, and clash handle is carried out to the first Sub-resolution assist features, so that along vertical with the extending direction of sub-goal figure
Direction multiple first Sub-resolution assist features within the first pre-determined distance that are staggered are reset to same vertical line；Determine growth
Region, and the second Sub-resolution assist features are formed in growth district, and the second Sub-resolution assist features are marked on a map with specific item
The distance between shape is that the distance between the second pre-determined distance and first Sub-resolution assist features are third pre-determined distance.This
Sample one, between arbitrary sub-goal figure, the first Sub-resolution assist features and the second Sub-resolution assist features away from
From within a preset range, and then can avoid mutually wrong between hypotelorism, image between image in the prior art overlapping, image
The problems such as position, the preparation process of mask pattern is not only simplified, photoetching resolution also can be improved.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is a kind of flow diagram of method according to rule addition SRAF provided in an embodiment of the present invention；
Fig. 2 is a kind of process schematic of method according to rule addition SRAF provided in an embodiment of the present invention；
Fig. 3 is a kind of process schematic of method according to rule addition SRAF provided in an embodiment of the present invention；
Fig. 4 is a kind of process schematic of method according to rule addition SRAF provided in an embodiment of the present invention；
Fig. 5 is a kind of process schematic of method according to rule addition SRAF provided in an embodiment of the present invention；
Fig. 6 is a kind of process schematic of method according to rule addition SRAF provided in an embodiment of the present invention；
Fig. 7 is a kind of process schematic of method according to rule addition SRAF provided in an embodiment of the present invention；
Fig. 8 is a kind of process schematic of method according to rule addition SRAF provided in an embodiment of the present invention；
Fig. 9 is a kind of process schematic of method according to rule addition SRAF provided in an embodiment of the present invention；
Figure 10 is a kind of process schematic of method according to rule addition SRAF provided in an embodiment of the present invention.
Appended drawing reference:
11- sub-goal figure；The first Sub-resolution assist features of 12-；The second Sub-resolution assist features of 13-；The vitellarium 23-
Domain.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The embodiment of the present invention provides a kind of method according to rule addition SRAF, as shown in Figure 1, can be real as follows
It is existing:
S11, as Figure 2-3, acquisition targeted graphical, and determine view field；Targeted graphical includes multiple sub-goal figures 11.
As shown in figure 5, selecting SRAF rule according to view field, and the first Subresolution is added in view field based on SRAF rule
Secondary graphics 12.
Herein, part sub-goal figure 11 includes isolation pattern；View field include first area (21a in Fig. 3 ~
21c) and second area (22a ~ 22c in Fig. 4)；Along the direction vertical with the extending direction of sub-goal figure 11, first area
For the region between two neighboring sub-goal figure 11；Second area is along the side vertical with the extending direction of sub-goal figure 11
To the adjacent white space with isolation pattern.
In addition, any one sub-goal figure 11 can extend in one direction, for example, sub-goal figure 11 is in rectangle；
Alternatively, a sub- targeted graphical 11 can also extend along multiple directions, for example, sub-goal figure 11 is L-shaped.
For convenience of description, hereafter illustrated with sub-goal figure in rectangle.
It should be noted that first, it will be appreciated by those skilled in the art that, for any one sub-goal figure 11,
If along the direction vertical with the extending direction of sub-goal figure 11, within the scope of certain distance (such as within 2 μm), nothing and the son
The adjacent sub-goal figure 11 of targeted graphical, then the sub-goal figure 11 is isolation pattern.It is exemplary, such as the sub-goal in Fig. 4
Figure 11a deviates from the side sub-goal figure 11c, and without other sub-goal figures, therefore, sub-goal figure 11a is relative to sub-goal
Figure 11b and sub-goal figure 11c is isolation pattern.Since sub-goal figure 11a is close to the side sub-goal figure 11c, respectively
Adjacent with sub-goal figure 11b and sub-goal figure 11c, therefore, second area corresponding with sub-goal figure 11a is 22a.
For any one sub-goal figure 11, if along the direction vertical with the extending direction of sub-goal figure 11, without with
A part of adjacent sub-goal figure 11 of the sub-goal figure 11, then the part is isolation pattern.It is exemplary, in Fig. 4
Sub-goal figure 11b is away from the side sub-goal figure 11a and part not adjacent with sub-goal figure 11c is isolation pattern.By
In sub-goal figure 11b close to the side sub-goal figure 11c, a part therein is adjacent with sub-goal figure 11c, therefore, with
Second area not corresponding with the adjacent part sub-goal figure 11c is 22c in sub-goal figure 11b.
Meanwhile it can also determine that second area further includes second area 22b and the second area in Fig. 3 in a like fashion
22d, details are not described herein.
Second, along the direction vertical with the extending direction of sub-goal figure 11, adjacent white space can with isolation pattern
All as second area；Alternatively, along the direction vertical with the extending direction of sub-goal figure 11, the adjacent sky with isolation pattern
A part in white region is as second area.
If along the direction vertical with the extending direction of sub-goal figure 11, with one in the white space of isolation pattern adjoining
Part is used as second area, then optionally, an adjacent second area with any one isolation pattern, away from the isolated figure
The distance between edge and the isolation pattern of shape are 1.3 ~ 2 μm.
It is exemplary, an adjacent second area with any one isolation pattern, away from the isolation pattern edge with
The distance between the isolation pattern is 1.3 μm, 1.56 μm, 2 μm.
Third is not defined the line width of multiple sub-goal figures 11, can be adapted for the chip of arbitrary node.
Exemplary, according to the chip of 28 nodes, then the minimum feature of each sub-goal figure 11 is 45nm.
According to the chip of 7 nodes, then the minimum feature of each sub-goal figure 11 is 32nm.
According to the chip of 14 nodes, then the minimum feature of each sub-goal figure 11 is 38nm.
Wherein, the line width of the sub-goal figure 11 under the same node that each supplier provides is different, the embodiment of the present invention
Only with minimum feature example.
4th, the positional relationship between multiple sub-goal figures 11 is not defined, the position of multiple sub-goal figures
Relationship is related with user demand, and the embodiment of the present invention does not do particular determination to this.
5th, can according to the method based on model, by the SRAF of resolution chart as a result, and engineer experience, choosing
Select suitable SRAF rule.
6th, the line width of the first Sub-resolution assist features 12 is not defined, specifically, the first Subresolution assists
The line width of figure 12 is related with actual design demand.
Exemplary, the line width of the first Sub-resolution assist features 12 is 15 ~ 30nm.
Specifically, being 45nm with the line width of sub-goal figure 11, between sub-goal figure 11a and sub-goal figure 11b
Distance is 200nm, the distance between sub-goal figure 11b and sub-goal figure 11c are 120nm, sub-goal figure 11a and specific item
For the distance between shape of marking on a map 11c is 320nm, the line width of the first Sub-resolution assist features 12 is 30nm.
The region of face forms the first Subresolution auxiliary between sub-goal figure 11a and sub-goal figure 11b
Figure 12, first Sub-resolution assist features 12 are with the distance between sub-goal figure 11a and sub-goal figure 11b
85nm。
The region of face forms two the first Subresolution auxiliary between sub-goal figure 11a and sub-goal figure 11c
Figure 12.Wherein, figure is assisted close to the first Subresolution of sub-goal figure 11a in two the first Sub-resolution assist features 12
The distance between shape 12 and sub-goal figure 11a are 80nm；It marks on a map in two the first Sub-resolution assist features 12 close to specific item
The distance between the first Sub-resolution assist features 12 of shape 11c and sub-goal figure 11c are 80nm；Two the first Subresolutions
The distance between secondary graphics 12 are 100nm.
N the first Sub-resolution assist features 12, specific item are formed in second area 22a corresponding with sub-goal figure 11a
Shape of marking on a map 11a deviates from the distance between edge and a first Sub-resolution assist features 12 of n of targeted graphical 11c
90nm、135nm…。
N the first Sub-resolution assist features 12, specific item are formed in second area 22b corresponding with sub-goal figure 11b
Shape of marking on a map 11b deviates from the distance between edge and a first Sub-resolution assist features 12 of n of targeted graphical 11c
90nm、135nm…。
N the first Sub-resolution assist features 12, specific item are formed in second area 22c corresponding with sub-goal figure 11b
Shape of marking on a map 11b deviates from the distance between edge and a first Sub-resolution assist features 12 of n of targeted graphical 11a
90nm、135nm…。
N the first Sub-resolution assist features 12, specific item are formed in second area 22d corresponding with sub-goal figure 11c
Shape of marking on a map 11c deviates from the distance between edge and a first Sub-resolution assist features 12 of n of targeted graphical 11a
90nm、135nm…。
S12, as shown in fig. 6, carry out conflict cleaning to the first Sub-resolution assist features 12 so that along marking on a map with specific item
The vertical direction of the extending direction of shape 11 multiple first Sub-resolution assist features 12 within the first pre-determined distance that are staggered are reset
On to same vertical line.
It is exemplary, as shown in fig. 6, with the first Subresolution in second area 22b with sub-goal figure 11b interval 90nm
Secondary graphics 12, the first Sub-resolution assist features 12 between sub-goal figure 11a and sub-goal figure 11b and
It is between sub-goal figure 11a and sub-goal figure 11c and auxiliary with the first Subresolution of sub-goal figure 11a interval 80nm
It helps for figure 12, the first Sub-resolution assist features 12 between sub-goal figure 11a and sub-goal figure 11b, phase
Compared with other two the first Sub-resolution assist features 12 are inclined to the direction that sub-goal figure 11a is directed toward sub-goal figure 11b
5nm.Therefore, the embodiment of the present invention can be by the first Subresolution between sub-goal figure 11a and sub-goal figure 11b
Secondary graphics 12 move 5nm along the direction that sub-goal figure 11a is directed toward sub-goal figure 11a, so that three is in same perpendicular
On straight line, and the vertical line is parallel with the extending direction of sub-goal figure 11.
It is, of course, also possible to make the first Sub-resolution assist features of above three 12 be in same vertical line using other modes
On, as long as the first Subresolution after the distance between the first Sub-resolution assist features 12 and targeted graphical 11 and movement
The distance between secondary graphics 12 and other the first Sub-resolution assist features 12 meet design requirement, the embodiment of the present invention
To this without limiting.
As shown in fig. 6, to assist scheming with the first Subresolution of sub-goal figure 11b interval 135nm in second area 22c
In shape 12, second area 22c and for the first Sub-resolution assist features 12 of sub-goal figure 11c interval 90nm, the two it
Between spacing close to 15nm.Therefore, it can use the average value of spacing between the two, and move two the first Subresolution auxiliary simultaneously
Figure 12, so that the two is on same vertical line, and the vertical line is parallel with the extending direction of sub-goal figure 11.
It is, of course, also possible to make above-mentioned two first Sub-resolution assist features 12 be in same vertical line using other modes
On, as long as the first Subresolution after the distance between the first Sub-resolution assist features 12 and targeted graphical 11 and movement
The distance between secondary graphics 12 and other the first Sub-resolution assist features 12 meet design requirement, the embodiment of the present invention
To this without limiting.
For above-mentioned, multiple first Sub-resolution assist features 12 after movement are located on same vertical line, refer to: mobile
The central axes parallel with the extending direction of sub-goal figure 11 are located at same in multiple first Sub-resolution assist features 12 afterwards
On vertical line.
Since the line width of above-mentioned the first all Sub-resolution assist features 12 is 30nm, first after movement
The both ends being in contact in Sub-resolution assist features 12 are completely coincident.
It should be noted that step S12 is will to violate the first Sub-resolution assist features 12 of fabrication mask rule to carry out
Translation, recombination etc., so that it meets fabrication mask rule.
It is exemplary based on this, it can be identical to multiple extending directions and along the direction of extending direction vertical to itself mistake
It opens multiple first Sub-resolution assist features 12 within 15nm and carries out conflict cleaning, so that above-mentioned multiple first Subresolutions
Secondary graphics 12 are reset to same vertical line.
That is, the first pre-determined distance is 15nm.
S13, as shown in figures 7 and 9, marks on a map according to the position of sub-goal figure 11, the line width of sub-goal figure 11, specific item
The second pre-determined distance, the second Subresolution to be formed between shape 11 and the second Sub-resolution assist features 13 to be formed is auxiliary
It helps between the line width and the second Sub-resolution assist features 13 and the first Subresolution assistant images 12 to be formed of figure 13
Third pre-determined distance, determine growth district 23；Growth district 23 be located at the both ends of sub-goal figure 11 and with it is corresponding
Sub-goal figure is adjacent.
It should be noted that first, the specific range of the second pre-determined distance and third pre-determined distance is not defined, only
The second pre-determined distance and third pre-determined distance is wanted to meet design requirement.
Exemplary, the second pre-determined distance is 40 ~ 120nm, and third pre-determined distance is 15 ~ 30nm.
Second, the line width of the second Sub-resolution assist features 13 is not defined, specifically, the second Subresolution assists
The line width of figure 13 is related with actual design demand.
Exemplary, the line width of the second Sub-resolution assist features 13 is 15 ~ 30nm.
Specifically, the length of growth district 23 is the second pre-determined distance, the second Asia along the extending direction of sub-goal figure 11
The sum of the line widths of resolution ratio secondary graphics 13, third pre-determined distance.
Exemplary, with the line width of sub-goal figure 11 be 45nm, the second pre-determined distance is 85nm, third pre-determined distance is
30nm, the second Sub-resolution assist features 13 to be formed line width be 30nm for, along the extending direction of sub-goal figure 11,
The length of growth district is 85+30+30=145nm.
Specifically, along the direction vertical with the extending direction of sub-goal figure 11, the width of growth district 23 is and the life
The length of corresponding second Sub-resolution assist features 13 in long region 23 and 2 times of the sum of third pre-determined distance.
Wherein, the length of the second Sub-resolution assist features 13 to be formed is the line of corresponding sub-goal figure 11
Wide 0.8 ~ 2 times.
Exemplary, with the line width of sub-goal figure 11 be 45nm, the length of the second Sub-resolution assist features 13 is and it
1.2 times of the line width of corresponding sub-goal figure 11, for third pre-determined distance is 30nm, along the extension side of sub-goal figure 11
To the length of the second Sub-resolution assist features 13 is 45*1.2=54nm；Further, along the extension with sub-goal figure 11
The vertical direction in direction, the width of growth district are 54+30*2=114nm.
S14, as shown in figure 8, removal the first Sub-resolution assist features 12 in be located at growth district 23 part.
S15, as shown in figure 9, according to the position of sub-goal figure 11 and the line width of sub-goal figure 11, in vitellarium
The second Sub-resolution assist features 13 are formed in domain 23；Second Sub-resolution assist features are equipped in each growth district；
Each second Sub-resolution assist features are corresponding with one end of sub-goal figure, the second Sub-resolution assist features and corresponding
Sub-goal figure the setting of one end face, and the line width direction of one end of its extending direction and corresponding sub-goal figure
In parallel；Second resolution secondary graphics and the setting of corresponding sub-goal figure face.
It should be noted that first, the both ends of each sub-goal figure 11 are respectively provided with a growth district 23, and specific item
Shape of marking on a map 11 and growth district correspond.Therefore, for any one sub-goal figure 11, there are two the second Subresolutions
Secondary graphics 13 are corresponding.
Second, second resolution secondary graphics 13 and corresponding 11 face of sub-goal figure are arranged, that is, second differentiates
The center of rate secondary graphics 13 and the center of corresponding sub-goal figure 11 are on same vertical line, the vertical line and specific item
The extending direction of shape of marking on a map 11 is parallel.On this basis, the extending direction of the second Sub-resolution assist features 13 and right with it
The extending direction for the sub-goal figure 11 answered is vertical.
Certainly, if sub-goal figure 11 is not rectangle, the second Sub-resolution assist features 13 and corresponding specific item
One end face of shape of marking on a map 11 is arranged, and the extending direction of second Sub-resolution assist features 13 and corresponding sub-goal
The line width direction of one end of figure 11 is parallel.
The embodiment of the present invention provides a kind of method according to rule addition SRAF, is initially formed the first Sub-resolution assist features
12, and clash handle is carried out to the first Sub-resolution assist features, so that along vertical with the extending direction of sub-goal figure 11
Direction multiple first Sub-resolution assist features 12 within the first pre-determined distance that are staggered reset to same vertical line；It determines
Growth district 23, and the second Sub-resolution assist features 13 are formed in growth district 23, and the second Sub-resolution assist features
The distance between 13 and sub-goal figure 11 are the second pre-determined distance, with the distance between the first Sub-resolution assist features 12 are
Third pre-determined distance.So, arbitrary sub-goal figure 11, the first Sub-resolution assist features 12 and second sub- point
The distance between resolution secondary graphics 13 within a preset range, and then can avoid image in the prior art and be overlapped, between image
Between hypotelorism, image the problems such as mutual dislocation, the preparation process of mask pattern is not only simplified, photoetching resolution also can be improved
Rate.
Optionally, after forming the second Sub-resolution assist features 13, the method for adding SRAF further include: such as Figure 10 institute
Show, the cleaning that conflicts is carried out to part adjacent with growth district 23 in the first Sub-resolution assist features 12, it is sub- with removal first
The part adjacent with growth district 23 in resolution ratio secondary graphics 12, alternatively, with by the first Sub-resolution assist features 12 with
The adjacent part amplification of growth district 23；Wherein, amplified first Sub-resolution assist features 12 and the second Subresolution are auxiliary
The distance between figure 13 and other the first Sub-resolution assist features 12 is helped to be greater than or equal to third pre-determined distance.
That is, the process that part adjacent with growth district 23 in the first Sub-resolution assist features 12 amplifies
In, it should ensure that amplified first Sub-resolution assist features 12 and the second Sub-resolution assist features 13 and other first sub- point
The distance between resolution secondary graphics 12 are greater than or equal to third pre-determined distance.
It should be noted that the process is amplified to the first Sub-resolution assist features for violating fabrication mask rule
Or reduce, so that it meets fabrication mask rule.
In the embodiment of the present invention, gone since the part in growth district 23 will be located in the first Sub-resolution assist features 12
It removes, therefore, the size of the part adjacent with growth district 23 is very small in the first Sub-resolution assist features 12, current
Mask equipment is difficult to prepare very small size of mask pattern.Therefore, very small size of first Subresolution can be assisted
Figure 12 is got rid of, or very small size of first Sub-resolution assist features 12 are amplified.
More than, only a specific embodiment of the invention, but scope of protection of the present invention is not limited thereto, and it is any to be familiar with
Those skilled in the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all cover
Within protection scope of the present invention.Therefore, protection scope of the present invention should be subject to the protection scope in claims.
Claims (7)
1. a kind of method according to rule addition SRAF characterized by comprising
Targeted graphical is obtained, and determines view field；The targeted graphical includes multiple sub-goal figures；According to the projected area
Domain selects SRAF rule, and the first Sub-resolution assist features are added in the view field based on the SRAF rule；
Conflict cleaning is carried out to first Sub-resolution assist features, so that along the extending direction with the sub-goal figure
Vertical direction multiple first Sub-resolution assist features within the first pre-determined distance that are staggered are reset to same vertical line
On；
According to the position of the sub-goal figure, the line width of the sub-goal figure, the sub-goal figure and to be formed the
The line width of the second pre-determined distance, second Sub-resolution assist features to be formed between two Sub-resolution assist features,
And the third between second Sub-resolution assist features and the first Subresolution assistant images to be formed is default
Distance determines growth district；The growth district be located at the both ends of the sub-goal figure and with the corresponding specific item
Shape of marking on a map is adjacent；
Remove the part for being located at the growth district in first Sub-resolution assist features；
According to the position of the sub-goal figure and the line width of the sub-goal figure, institute is formed in the growth district
State the second Sub-resolution assist features；Second Sub-resolution assist features are equipped in each growth district；Often
A second Sub-resolution assist features are corresponding with one end of the sub-goal figure, second Sub-resolution assist features
It is arranged with one end face of the corresponding sub-goal figure, and its extending direction and the corresponding specific item are marked on a map
The line width direction of one end of shape is parallel；The second resolution secondary graphics and the corresponding sub-goal figure face are set
It sets.
2. the method according to claim 1 according to rule addition SRAF, which is characterized in that forming described second sub- point
After resolution secondary graphics, the method for the addition SRAF further include:
The cleaning that conflicts is carried out to part adjacent with the growth district in first Sub-resolution assist features, to remove
Part adjacent with the growth district in the first Sub-resolution assist features is stated, alternatively, with first Subresolution is auxiliary
It helps in figure and amplifies with the adjacent part of the growth district；
Wherein, amplified first Sub-resolution assist features and second Sub-resolution assist features and other described in
The distance between first Sub-resolution assist features are greater than or equal to the third pre-determined distance.
3. the method according to claim 1 or 2 according to rule addition SRAF, which is characterized in that if multiple described first
The line width of Sub-resolution assist features is identical, then conflict cleaning is carried out to first Sub-resolution assist features, so that edge
What the direction vertical with the extending direction of the sub-goal figure was staggered within the first pre-determined distance multiple described first sub- differentiates
Rate secondary graphics are reset to same vertical line, comprising:
The position of at least one mobile first Sub-resolution assist features, so that along the extension with the sub-goal figure
The vertical direction in the direction direction vertical with the extending direction of sub-goal figure within the first pre-determined distance that be staggered is multiple described
First Sub-resolution assist features are arranged to same vertical line.
4. the method according to claim 1 or 2 according to rule addition SRAF, which is characterized in that
Along the extending direction of the sub-goal figure, the length of the growth district is second pre-determined distance, described second
The sum of the line width of Sub-resolution assist features, described third pre-determined distance；
It is described and/or along the line width direction of sub-goal figure described in the direction vertical with the extending direction of sub-goal figure
The width of growth district is the length and described the of 2 times of second Sub-resolution assist features corresponding with the growth district
The sum of three pre-determined distances.
5. the method according to claim 4 according to rule addition SRAF, which is characterized in that second Subresolution is auxiliary
Help the length of figure for 0.8 ~ 2 times of the line width of the corresponding sub-goal figure.
6. the method according to claim 1 or 2 according to rule addition SRAF, which is characterized in that the sub-goal figure
Line width be one of 32nm, 38nm, 45nm；
And/or first Sub-resolution assist features line width and second Sub-resolution assist features line width be 15 ~
30nm。
7. the method according to claim 1 or 2 according to rule addition SRAF, which is characterized in that described second it is default away from
From for 40 ~ 120nm；
And/or the third pre-determined distance is 15 ~ 30nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112099319A (en) * | 2020-09-17 | 2020-12-18 | 中国科学院微电子研究所 | Sub-resolution auxiliary graph adding method and device and computer readable storage medium |
| CN114967370A (en) * | 2022-06-16 | 2022-08-30 | 深圳国微福芯技术有限公司 | Sub-resolution scattering bar generation method based on skeleton structure |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040170905A1 (en) * | 2003-02-28 | 2004-09-02 | International Business Machines Corporation | Binary OPC for assist feature layout optimization |
| US20060188791A1 (en) * | 2005-02-24 | 2006-08-24 | Texas Instruments Incorporated | Merging sub-resolution assist features of a photolithographic mask |
| US20060281016A1 (en) * | 2005-06-10 | 2006-12-14 | Texas Instruments Incorporated | Modifying sub-resolution assist features according to rule-based and model-based techniques |
| US20070035031A1 (en) * | 2005-08-12 | 2007-02-15 | Texas Instruments Incorporated | Sub-resolution assist feature to improve symmetry for contact hole lithography |
| US20070128525A1 (en) * | 2005-12-07 | 2007-06-07 | Intel Corporation | Sub-resolution assist features for photolithography with trim ends |
| US20070224519A1 (en) * | 2006-03-27 | 2007-09-27 | Intel Corporation | Diagonal corner-to-corner sub-resolution assist features for photolithography |
| US20090258302A1 (en) * | 2008-04-10 | 2009-10-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sub-resolution assist feature of a photomask |
| US20110065028A1 (en) * | 2009-09-11 | 2011-03-17 | Katsuyoshi Kodera | Pattern generating method, manufacturing method of mask, and manufacturing method of semiconductor device |
| CN108828896A (en) * | 2018-05-31 | 2018-11-16 | 中国科学院微电子研究所 | Method for adding sub-resolution auxiliary graph and application of method |
| CN109188870A (en) * | 2018-09-30 | 2019-01-11 | 上海华力集成电路制造有限公司 | Optical proximity correction method |
| CN112346294A (en) * | 2020-11-13 | 2021-02-09 | 上海华力集成电路制造有限公司 | Multiple graph sub-resolution auxiliary graph adding method |
-
2019
- 2019-06-03 CN CN201910477251.1A patent/CN110187600B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040170905A1 (en) * | 2003-02-28 | 2004-09-02 | International Business Machines Corporation | Binary OPC for assist feature layout optimization |
| US20060188791A1 (en) * | 2005-02-24 | 2006-08-24 | Texas Instruments Incorporated | Merging sub-resolution assist features of a photolithographic mask |
| US20060281016A1 (en) * | 2005-06-10 | 2006-12-14 | Texas Instruments Incorporated | Modifying sub-resolution assist features according to rule-based and model-based techniques |
| US20070035031A1 (en) * | 2005-08-12 | 2007-02-15 | Texas Instruments Incorporated | Sub-resolution assist feature to improve symmetry for contact hole lithography |
| US20070128525A1 (en) * | 2005-12-07 | 2007-06-07 | Intel Corporation | Sub-resolution assist features for photolithography with trim ends |
| US20070224519A1 (en) * | 2006-03-27 | 2007-09-27 | Intel Corporation | Diagonal corner-to-corner sub-resolution assist features for photolithography |
| US20090258302A1 (en) * | 2008-04-10 | 2009-10-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sub-resolution assist feature of a photomask |
| US20110065028A1 (en) * | 2009-09-11 | 2011-03-17 | Katsuyoshi Kodera | Pattern generating method, manufacturing method of mask, and manufacturing method of semiconductor device |
| CN108828896A (en) * | 2018-05-31 | 2018-11-16 | 中国科学院微电子研究所 | Method for adding sub-resolution auxiliary graph and application of method |
| CN109188870A (en) * | 2018-09-30 | 2019-01-11 | 上海华力集成电路制造有限公司 | Optical proximity correction method |
| CN112346294A (en) * | 2020-11-13 | 2021-02-09 | 上海华力集成电路制造有限公司 | Multiple graph sub-resolution auxiliary graph adding method |
Non-Patent Citations (1)
| Title |
|---|
| 陈权等: "亚分辨率辅助图形对28纳米密集线条光刻成像的影响", 《中国集成电路》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112099319A (en) * | 2020-09-17 | 2020-12-18 | 中国科学院微电子研究所 | Sub-resolution auxiliary graph adding method and device and computer readable storage medium |
| CN112099319B (en) * | 2020-09-17 | 2023-10-03 | 中国科学院微电子研究所 | Sub-resolution auxiliary graph adding method and device and computer readable storage medium |
| CN114967370A (en) * | 2022-06-16 | 2022-08-30 | 深圳国微福芯技术有限公司 | Sub-resolution scattering bar generation method based on skeleton structure |
| CN114967370B (en) * | 2022-06-16 | 2023-08-11 | 深圳国微福芯技术有限公司 | Sub-resolution scattering bar generation method based on framework structure |
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|---|---|
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