CN109116675A - Improve the OPC modification method of hot spot process window - Google Patents
Improve the OPC modification method of hot spot process window Download PDFInfo
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- CN109116675A CN109116675A CN201810927406.2A CN201810927406A CN109116675A CN 109116675 A CN109116675 A CN 109116675A CN 201810927406 A CN201810927406 A CN 201810927406A CN 109116675 A CN109116675 A CN 109116675A
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- Prior art keywords
- hot spot
- sub
- assist features
- resolution assist
- process window
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The invention discloses a kind of OPC modification methods for improving hot spot process window, comprising steps of Step 1: adding the first Sub-resolution assist features in parallel in initial domain；It corrects to obtain amendment domain Step 2: carrying out OPC to initial domain；Step 3: searching hot spot figure in amendment domain；Step 4: being vertically arranged the second Sub-resolution assist features in the side of hot spot figure.The process window of energy hot spot figure of the present invention, while also having the advantages that simple process and at low cost.
Description
Technical field
The present invention relates to a kind of semiconductor integrated circuit manufacture methods, more particularly to a kind of raising hot spot process window
Optical proximity correction (Optical Proximity Correction, OPC) modification method.
Background technique
In the photoetching process of semiconductor integrated circuit, the graphic structure of circuit is defined on mask plate layout (Mask) first
On, graphic structure, that is, design configuration on mask plate layout is transferred to by photoetching the photoresist for being formed in crystal column surface later
It goes up and forms photoetching offset plate figure.Due in a photolithographic process, since the wavelength of the size and photoetching of figure is closely sized to even
More hour is will lead to due to the interference of light, diffraction and development etc. on the figure and mask plate layout of exposure on a photoresist
Figure it is inconsistent, generate optical approach effect (Optical Proximity Effect, OPE) distortion.So in order to
The figure that needs are formed on photoresist is needed to carry out OPC amendment to the figure on mask plate layout, be covered by OPC is revised
Although dimension of picture on template domain and require it is inconsistent, after being transferred on photoresist through overexposure on photoresist
Figure it is consistent with requirement.
But with the increase of integrated level, dimension of picture is smaller and smaller, layout design becomes increasingly complex, OPC makeover process
In can encounter more and more hot spots, hot spot is the point of various problems occur on the revised photolithography edition territory of OPC, these points pair
The design configuration answered is herein defined as hot spot figure, since hot spot figure is all problematic figure, therefore needs to heat
Dot pattern is handled and can eliminate these hot spots after treatment.
Hot spot figure itself is usually to meet design rule, but process window, that is, lithographic process window is smaller, Ye Ji
In photoetching process, when photoetching process such as light intensity or depth of focus have lesser fluctuation, hot spot figure will go wrong simultaneously
Form defect.In 40nm technology node technique below, it is widely used Sub-resolution assist features (Sub Resolution
Assist Feature, SRAF), the light intensity at design configuration can be changed when SRAF is arranged near design configuration and assembled deep
Degree, but SRAF itself is not imaged.So it is auxiliary usually to add Subresolution in parallel near hot spot figure in existing method
Figure is helped to improve hot spot figure process window.Namely Sub-resolution assist features with hot spot figure are parallel in existing method
's.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of OPC modification methods for improving hot spot process window, can be
On the basis of existing parallel addition Sub-resolution assist features, the process window of hot spot figure is further increased.
In order to solve the above technical problems, the OPC modification method provided by the invention for improving hot spot process window includes as follows
Step:
Step 1: the first Sub-resolution assist features are added in initial domain, first Sub-resolution assist features
It is parallel with the design configuration in the initial domain.
It corrects to obtain amendment domain Step 2: carrying out OPC to the initial domain.
Step 3: searching hot spot figure in the amendment domain.
Step 4: the second Sub-resolution assist features, second Subresolution is arranged in the side of the hot spot figure
Secondary graphics and the hot spot figure are vertical, the technique for improving the hot spot figure by second Sub-resolution assist features
Window.
A further improvement is that in step 4, if it is sub- to be already provided with described first in the side of the hot spot figure
Resolution ratio secondary graphics, then need first to remove first Sub-resolution assist features, adds the described second sub- resolution again later
Rate secondary graphics.
A further improvement is that the process window of the hot spot figure in step 3 is less than or equal to the reality of photoetching process
Fluctuation range, so that the probability for occurring defect after the completion of photoetching process at the hot spot figure improves；It is described after step 4
The process window of hot spot figure is increased to greater than the practical fluctuation range of photoetching process, avoids photoetching process after the completion in the heat
Occurs defect at dot pattern.
A further improvement is that the range of second Sub-resolution assist features is arranged in step 4 are as follows: with the heat
The center of dot pattern is the center of circle, using 4 times of minimum design rules as the border circular areas of diameter.
A further improvement is that the rule of addition second Sub-resolution assist features and addition first Asia are differentiated
The rule of rate secondary graphics is identical.
A further improvement is that the corresponding parameter of rule of addition first Sub-resolution assist features includes:
The minimum range of the long side of first Sub-resolution assist features and corresponding target design figure；
The minimum range of the short side of first Sub-resolution assist features and corresponding target design figure；
Minimum range between the long side and long side of adjacent first Sub-resolution assist features；
Minimum range between the long side and short side of adjacent first Sub-resolution assist features；
Minimum range between the short side and short side of adjacent first Sub-resolution assist features；
The width range of first Sub-resolution assist features；
The minimum length of first Sub-resolution assist features.
A further improvement is that realizing the size of the process window of the hot spot figure by OPC simulation.
A further improvement is that the parameter for the photoetching process simulated in OPC simulation includes light intensity and the depth of focus,
Under conditions of changing the light intensity and the depth of focus, the variation of the critical size of the hot spot figure is tested, by comparing
The variation of the critical size of the hot spot figure carrys out the process window of hot spot figure described in comparison.
A further improvement is that the light intensity has ± 4% variation range.
A further improvement is that the depth of focus has the variation range of ± 40nm.
A further improvement is that first Sub-resolution assist features and second Sub-resolution assist features are all
Strip structure.
A further improvement is that further comprising the steps of: in said step 1
The hot spot figure is directly predicted in the initial domain, later, in the side of the hot spot figure of prediction
Second Sub-resolution assist features are set.
A further improvement is that the hot spot figure in step 1 occurs in the modified domain of OPC according to having done
Known hotspot figure is predicted to obtain.
A further improvement is that OPC modification method is applied in the technique of 40 nanometers or less technology nodes.
The present invention it is existing the first Sub-resolution assist features are arranged in parallel in domain on the basis of, in hot spot figure
Side is vertically arranged the second Sub-resolution assist features, and vertically disposed second Sub-resolution assist features breach existing intrinsic
Use be arranged in parallel the limitations of Sub-resolution assist features, and using vertically disposed second Sub-resolution assist features it
The process window of hot spot figure can be further improved afterwards.
In addition, of the invention does not need additionally increase setting rule when being vertically arranged the second Sub-resolution assist features, directly
The female connector rule that the first Sub-resolution assist features are arranged in parallel, because of individually designed a set of Sub-resolution assist features
Setting rule needs take considerable time it is also high with manpower and complexity, so simple process and low cost of the invention.
Detailed description of the invention
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments:
Fig. 1 is the flow chart of OPC modification method of the embodiment of the present invention；
Fig. 2A-Fig. 2 B is the domain in each step of OPC modification method of the embodiment of the present invention near the first hot spot figure；
Fig. 3 A- Fig. 3 B is the domain in each step of OPC modification method of the embodiment of the present invention near second hot area figure.
Specific embodiment
As shown in Figure 1, being the flow chart of OPC modification method of the embodiment of the present invention；Fig. 2A to Fig. 2 B is the embodiment of the present invention
Domain in each step of OPC modification method near the first hot spot figure；Fig. 3 A to Fig. 3 B is OPC modification method of the embodiment of the present invention
Domain in each step near second hot area figure；The embodiment of the present invention improve hot spot process window OPC modification method include
Following steps:
Step 1: the first Sub-resolution assist features 2 are added in initial domain, first Sub-resolution assist features
2 is parallel with the design configuration 1 in the initial domain.
It corrects to obtain amendment domain Step 2: carrying out OPC to the initial domain.
Step 3: searching hot spot figure in the amendment domain.
It as shown in Figure 2 A, is domain of the OPC modification method of the embodiment of the present invention in step 3 near the first hot spot figure,
First hotspot graph is shaped like shown in virtual coil 101a.The minimum spacing of two design configurations 1 at virtual coil 101a is smaller.
It as shown in Figure 3A, is domain of OPC of the embodiment of the present invention modification method near step 3 second hot area figure, the
Two hotspot graphs are shaped like shown in virtual coil 101b.The minimum spacing of two design configurations 1 at virtual coil 101b is smaller.
Step 4: the second Sub-resolution assist features 3, second Subresolution is arranged in the side of the hot spot figure
Secondary graphics and the hot spot figure are vertical, the technique for improving the hot spot figure by second Sub-resolution assist features
Window.
If being already provided with first Sub-resolution assist features 2 in the side of the hot spot figure, elder generation is needed
First Sub-resolution assist features 2 are removed, add second Sub-resolution assist features again later.
It as shown in Figure 2 B, is domain of OPC of the embodiment of the present invention modification method near step 4 the first hot spot figure, the
One hotspot graph is shaped like shown in virtual coil 101a.The minimum spacing of two design configurations 1 at virtual coil 101a is smaller.
It as shown in Figure 3B, is domain of OPC of the embodiment of the present invention modification method near step 4 second hot area figure, the
Two hotspot graphs are shaped like shown in virtual coil 101b.The minimum spacing of two design configurations 1 at virtual coil 101b is smaller.
The process window of the hot spot figure in step 3 is less than or equal to the practical fluctuation range of photoetching process, so that light
The probability for occurring defect after the completion of carving technology at the hot spot figure improves；The process window of the hot spot figure after step 4
Mouth is increased to greater than the practical fluctuation range of photoetching process, avoids lacking at the hot spot figure after the completion of photoetching process
It falls into.
The range of second Sub-resolution assist features is set in step 4 are as follows: with the center of the hot spot figure
For the center of circle, using 4 times of minimum design rules as the border circular areas of diameter.
It adds the rule of second Sub-resolution assist features and adds the rule of first Sub-resolution assist features 2
It is then identical.
The corresponding parameter of rule for adding first Sub-resolution assist features 2 includes:
The minimum range of the long side of first Sub-resolution assist features 2 and corresponding target design figure 1；
The minimum range of the short side of first Sub-resolution assist features 2 and corresponding target design figure 1；
Minimum range between the long side and long side of adjacent first Sub-resolution assist features 2；
Minimum range between the long side and short side of adjacent first Sub-resolution assist features 2；
Minimum range between the short side and short side of adjacent first Sub-resolution assist features 2；
The width range of first Sub-resolution assist features 2；
The minimum length of first Sub-resolution assist features 2.
In the embodiment of the present invention, the size of the process window of the hot spot figure is realized by OPC simulation.
The parameter for the photoetching process simulated in OPC simulation includes light intensity and the depth of focus, change the light intensity and
Under conditions of the depth of focus, the variation of the critical size of the hot spot figure is tested, by comparing the hot spot figure
The variation of critical size carrys out the process window of hot spot figure described in comparison.
The light intensity has ± 4% variation range.
The depth of focus has the variation range of ± 40nm.
In Fig. 2A, when two limiting values of variation range that line 102a and line 102b respectively indicate the lithography process parameters
Two limiting values of the marginal position of the design configuration 1 formed after exposure, the variation range of the lithography process parameters are
The light intensity is superimposed two ranges that the depth of focus formed with the variation range of ± 40nm with ± 4% variation range
Limiting value.The distance between line 102a and line 102b of the identical design configuration 1 indicate the pass of the corresponding design configuration 1
The variation of key size.The hot spot figure that the distance between line 102a and line 102b in Fig. 2A at dotted line power 101a have reacted
The process window of 101a, it can be seen that corresponding two design drawings of the process window of the 101a of hot spot figure described in Fig. 2A
The variation of the critical size of shape 1 is respectively 12.6nm and 13.9nm.
Equally, the crucial ruler of corresponding two design configurations 1 of the process window of hot spot figure 101a described in Fig. 2 B
Very little variation is respectively 12.8nm and 10.4nm.
So comparing Fig. 2A and Fig. 2 B it is found that the process window of the hot spot figure 101a averagely improves 1.65nm, mention
It is high by more 12.5%.Namely under conditions of identical photoetching process deviation, critical size variation is smaller, and process window is bigger.
Equally, the crucial ruler of corresponding two design configurations 1 of the process window of hot spot figure 101b described in Fig. 3 A
Very little variation is respectively 6.5nm and 10.4nm.
Equally, the crucial ruler of corresponding two design configurations 1 of the process window of hot spot figure 101b described in Fig. 3 B
Very little variation is respectively 5.5nm and 9.8nm.
So comparing Fig. 2A and Fig. 2 B it is found that the process window of the hot spot figure 101a averagely improves 0.8nm, improve
More 9.5%.
In the embodiment of the present invention, first Sub-resolution assist features 2 and second Sub-resolution assist features are all
For strip structure.
It further comprises the steps of: in said step 1
The hot spot figure is directly predicted in the initial domain, later, in the side of the hot spot figure of prediction
Second Sub-resolution assist features are set.The hot spot figure in step 1 was according to having done in the modified domain of OPC
The known hotspot figure of appearance is predicted to obtain.
OPC modification method is applied in the technique of 40 nanometers or less technology nodes.
The embodiment of the present invention it is existing the first Sub-resolution assist features 2 are arranged in parallel in domain on the basis of, in heat
The side of dot pattern is vertically arranged the second Sub-resolution assist features 3, and vertically disposed second Sub-resolution assist features are broken through
The limitation of Sub-resolution assist features is arranged in parallel in existing intrinsic use, and uses vertically disposed second Subresolution
The process window of hot spot figure can be further improved after secondary graphics.
In addition, the embodiment of the present invention does not need additionally increase setting when being vertically arranged the second Sub-resolution assist features 3
Rule directly applies the rule that the first Sub-resolution assist features 2 are arranged in parallel, because of individually designed a set of Subresolution
The setting rule needs of secondary graphics take considerable time it is also high with manpower and complexity, so simple process of the invention,
It is at low cost.
The present invention has been described in detail through specific embodiments, but these are not constituted to limit of the invention
System.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, these are also answered
It is considered as protection scope of the present invention.
Claims (14)
1. a kind of OPC modification method for improving hot spot process window, which comprises the steps of:
Step 1: the first Sub-resolution assist features are added in initial domain, first Sub-resolution assist features and institute
The design configuration stated in initial domain is parallel；
It corrects to obtain amendment domain Step 2: carrying out OPC to the initial domain；
Step 3: searching hot spot figure in the amendment domain；
Step 4: the second Sub-resolution assist features, the second Subresolution auxiliary is arranged in the side of the hot spot figure
Figure and the hot spot figure are vertical, and the process window of the hot spot figure is improved by second Sub-resolution assist features
Mouthful.
2. improving the OPC modification method of hot spot process window as described in claim 1, it is characterised in that: in step 4, if
First Sub-resolution assist features are already provided in the side of the hot spot figure, then it is sub- to need first to remove described first
Resolution ratio secondary graphics add second Sub-resolution assist features again later.
3. improving the OPC modification method of hot spot process window as described in claim 1, it is characterised in that: the institute in step 3
The process window for stating hot spot figure is less than or equal to the practical fluctuation range of photoetching process, so that in the heat after the completion of photoetching process
The probability for occurring defect at dot pattern improves；The process window of the hot spot figure is increased to greater than photoetching process after step 4
Practical fluctuation range, avoid defect occur at the hot spot figure after the completion of photoetching process.
4. improving the OPC modification method of hot spot process window as described in claim 1, it is characterised in that: be arranged in step 4
The range of second Sub-resolution assist features are as follows: using the center of the hot spot figure as the center of circle, with 4 times of minimal designs
Rule is the border circular areas of diameter.
5. improving the OPC modification method of hot spot process window as described in claim 1, it is characterised in that: addition described second
The rule of Sub-resolution assist features is identical with the rule of first Sub-resolution assist features is added.
6. improving the OPC modification method of hot spot process window as claimed in claim 5, it is characterised in that: addition described first
The corresponding parameter of rule of Sub-resolution assist features includes:
The minimum range of the long side of first Sub-resolution assist features and corresponding target design figure；
The minimum range of the short side of first Sub-resolution assist features and corresponding target design figure；
Minimum range between the long side and long side of adjacent first Sub-resolution assist features；
Minimum range between the long side and short side of adjacent first Sub-resolution assist features；
Minimum range between the short side and short side of adjacent first Sub-resolution assist features；
The width range of first Sub-resolution assist features；
The minimum length of first Sub-resolution assist features.
7. as claimed in claim 3 improve hot spot process window OPC modification method, it is characterised in that: by OPC simulation come
Realize the size of the process window of the hot spot figure.
8. improving the OPC modification method of hot spot process window as claimed in claim 7, it is characterised in that: in the OPC simulation
The parameter of the photoetching process of simulation includes light intensity and the depth of focus, under conditions of changing the light intensity and the depth of focus,
The variation of the critical size of the hot spot figure is tested, the variation of the critical size of the hot spot figure is by comparing to compare
State the process window of hot spot figure.
9. improving the OPC modification method of hot spot process window as claimed in claim 8, it is characterised in that: the light intensity has
± 4% variation range.
10. improving the OPC modification method of hot spot process window as claimed in claim 8, it is characterised in that: the depth of focus
Variation range with ± 40nm.
11. improving the OPC modification method of hot spot process window as described in claim 1, it is characterised in that: described first sub- point
Resolution secondary graphics and second Sub-resolution assist features are all strip structure.
12. improving the OPC modification method of hot spot process window as described in claim 1, it is characterised in that: in the step 1
In further comprise the steps of:
The hot spot figure is directly predicted in the initial domain, later, is arranged in the side of the hot spot figure of prediction
Second Sub-resolution assist features.
13. improving the OPC modification method of hot spot process window as claimed in claim 12, it is characterised in that: in step 1
The hot spot figure is predicted to obtain according to the known hotspot figure occurred in the modified domain of OPC had been done.
14. improving the OPC modification method of hot spot process window as described in claim 1, it is characterised in that: OPC modification method
In technique applied to 40 nanometers or less technology nodes.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810927406.2A CN109116675A (en) | 2018-08-15 | 2018-08-15 | Improve the OPC modification method of hot spot process window |
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| CN201810927406.2A CN109116675A (en) | 2018-08-15 | 2018-08-15 | Improve the OPC modification method of hot spot process window |
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Cited By (1)
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| CN110579938A (en) * | 2019-09-30 | 2019-12-17 | 上海华力集成电路制造有限公司 | OPC correction method for improving contact hole process hot spot through sub-resolution auxiliary graph |
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Application publication date: 20190101 |