CN108828896A - Add the application of the method and this method of Sub-resolution assist features - Google Patents
Add the application of the method and this method of Sub-resolution assist features Download PDFInfo
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- CN108828896A CN108828896A CN201810552404.XA CN201810552404A CN108828896A CN 108828896 A CN108828896 A CN 108828896A CN 201810552404 A CN201810552404 A CN 201810552404A CN 108828896 A CN108828896 A CN 108828896A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The present invention provides a kind of applications of method and this method for adding Sub-resolution assist features.This approach includes the following steps：S1, interception has the figure of periodic structure from original layout, obtains domain to be modified；Domain to be modified is modified, domain after being corrected by S2 by reversed photoetching technique, and domain includes the main graphic and secondary graphics for meeting imaging requirements after amendment；S3 separates main graphic and secondary graphics, and secondary graphics are added in original layout and carry out the optical proximity correction based on model.The above method changes the software tool for adding the mode of Sub-resolution assist features in optical proximity correction work and using, the time cycle of the period domain that can effectively shorten addition Sub-resolution assist features, the measuring and calculating for designing special test mask and putting by multiple figure is not needed, it does not need to carry out multiple exposure test, have the advantages that inexpensive and time-saving yet.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of method for adding Sub-resolution assist features
And the application of this method.
Background technique
Nanoimprinting technology as key and one of core technology in integrated circuit fabrication process directly affects collection
At the yield rate and manufacturability of circuit.As being constantly reduced to for integrated circuit feature size is made much smaller than in lithography system
Optical source wavelength, the accuracy and yield problem of circuit manufacture become increasingly conspicuous.Existing optical lithography processes generally use
Deep-submicron photoetching technique, the use of this technology cause layout patterns to be transferred to silicon wafer surface by mask and form printing
When figure, serious distortion can be generated.With optical proximity correction technology (optical proximity correction, OPC)
Based on RET (resolution enhancement technology, RET) in the fabrication of integrated circuits
It has generallyd use.
Subresolution is added to it and exposes secondary graphics (sub- to improve domain resolution ratio in a photolithographic process
Resolution assistant feature, SRAF), it is the important link for carrying out optical proximity correction.Under normal conditions, auxiliary
The position of the size and placement that help figure is determined by testing.Using the mask of one piece of special designing, have on the mask
The secondary graphics of various sizes.After exposure, to these graphical measurements, optimal placement location and width are determined.From initial addition
Secondary graphics generally require the complicated process of experience to the final size for determining added figure and placement location and expend more
Time.There is a kind of domain modification method based on calculating photoetching technique in optical proximity correction, can pass through reversed global
Optimization algorithm optimizes domain.But the reversed photoetching technique of large-scale use is directly modified domain, operation time
It can sharply increase, and optimize resulting graphic structure complexity through it and be difficult to manufacture.
Summary of the invention
The main purpose of the present invention is to provide it is a kind of add Sub-resolution assist features method and this method application,
To solve the problems, such as that addition secondary graphics process is complicated in the prior art and takes a long time.
To achieve the goals above, according to an aspect of the invention, there is provided a kind of addition Sub-resolution assist features
Method, include the following steps：S1, interception has the figure of periodic structure from original layout, obtains domain to be modified；S2,
Domain to be modified is modified by reversed photoetching technique, domain after being corrected, domain includes meeting imaging to want after amendment
The main graphic and secondary graphics asked；S3 separates main graphic and secondary graphics, and secondary graphics are added in original layout and are carried out
Optical proximity correction based on model.
Further, in step sl, the size of domain to be modified is 30 μm of 10 μ m, 10 μm~30 μ m.
Further, step S2 includes the following steps：Domain to be modified is modified by S21 by reversed photoetching technique,
Domain to be verified is obtained, domain to be verified includes main graphic to be verified and secondary graphics to be verified；S22, to domain to be verified into
Row imaging simulation is verified to obtain simulation figure；Simulation figure is compared with test pattern to obtain comparison result by S23,
When comparison result is more than allowable error, the calculating parameter of reversed photoetching technique is adjusted, and repeat step S21；When comparing
When being as a result no more than allowable error, domain after being corrected.
Further, calculating parameter includes the number of iterations and process conditions, and preferred processing condition includes：Exposure energy rises
It falls in ± 5% range of standard exposure dosage, defocusing amount is ± 40nm.
Further, step S3 includes the following steps：Main graphic and secondary graphics are separated and are simplified by S31；S32, will be simple
Secondary graphics after change, which are added in original layout, carries out the optical proximity correction based on model.
Further, step S31 includes the following steps：S311 carries out first to domain after amendment and simplifies processing, so that main
Figure and secondary graphics have straight flange structure；S312 separates main graphic and secondary graphics, so that at main graphic and secondary graphics
In different photoetching figure layers；S313 carries out second to secondary graphics and simplifies processing, so that secondary graphics meet addition Subresolution
The requirement of secondary graphics.
According to another aspect of the present invention, a kind of production method of mask plate is provided, is included the following steps：To original version
Figure is modified, and obtains amendment domain, and modified method is the method for above-mentioned addition Sub-resolution assist features；According to amendment
Domain is masked the production of plate.
According to another aspect of the present invention, a kind of photoetching technological method is additionally provided, is included the following steps：Using above-mentioned
The production method of mask plate makes to form mask plate；Photoetching process is carried out using mask plate, forms patterned photoresist.
Apply the technical scheme of the present invention, provide it is a kind of add Sub-resolution assist features method, this method be from
Interception has the figure of periodic structure in original layout, obtains domain to be modified, domain to be modified is then passed through reversed photoetching
Technology is modified, domain after being corrected, and domain includes the main graphic and secondary graphics for meeting imaging requirements after amendment, later
Main graphic and secondary graphics are separated, and secondary graphics are added in original layout and carry out the optical proximity correction based on model.
The above method changes the software tool for adding the mode of Sub-resolution assist features in optical proximity correction work and using,
The period domain that can effectively shorten adds the time cycle of Sub-resolution assist features, do not need to design special test mask with
It by the measuring and calculating that multiple figure is put, does not need to carry out multiple exposure test yet, have the advantages that inexpensive and time-saving.This
Outside, the above method can be applied to the addition of the Sub-resolution assist features of a variety of domains with periodic structure.
Detailed description of the invention
The Figure of description for constituting a part of the invention is used to provide further understanding of the present invention, and of the invention shows
Examples and descriptions thereof are used to explain the present invention for meaning property, does not constitute improper limitations of the present invention.In the accompanying drawings：
Fig. 1 shows in a kind of method for adding Sub-resolution assist features provided by the present invention and cuts from original layout
The pictorial diagram with periodic structure taken；
Fig. 2 shows the pictorial diagrams after being modified to figure shown in FIG. 1 by reversed photoetching technique；
Fig. 3, which is shown, carries out the first simplified processing to figure shown in Fig. 2 so that main graphic and secondary graphics have straight flange
Pictorial diagram after structure；
Fig. 4 is shown the schematic diagram of secondary graphics after main graphic shown in Fig. 3 and secondary graphics separation；
Fig. 5, which is shown, carries out the second schematic diagram for simplifying secondary graphics after processing to secondary graphics shown in Fig. 4；
Fig. 6, which shows for secondary graphics shown in fig. 5 to be added in original layout, carries out the optical proximity correction based on model
Pictorial diagram afterwards；
Fig. 7 shows a kind of flow diagram of the method for addition Sub-resolution assist features provided in embodiment 1.
Wherein, above-mentioned attached drawing includes the following drawings label：
10, there is the figure of periodic structure；11, main graphic；12, secondary graphics；20, pattern imaging result.
Specific embodiment
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.The present invention will be described in detail below with reference to the accompanying drawings and embodiments.
In order to enable those skilled in the art to better understand the solution of the present invention, below in conjunction in the embodiment of the present invention
Attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is only
The embodiment of a part of the invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill people
The model that the present invention protects all should belong in member's every other embodiment obtained without making creative work
It encloses.
It should be noted that description and claims of this specification and term " first " in above-mentioned attached drawing, "
Two " etc. be to be used to distinguish similar objects, without being used to describe a particular order or precedence order.It should be understood that using in this way
Data be interchangeable under appropriate circumstances, so as to the embodiment of the present invention described herein.In addition, term " includes " and " tool
Have " and their any deformation, it is intended that cover it is non-exclusive include, for example, containing a series of steps or units
Process, method, system, product or equipment those of are not necessarily limited to be clearly listed step or unit, but may include without clear
Other step or units listing to Chu or intrinsic for these process, methods, product or equipment.
It can be seen from background technology that in the prior art from initial addition secondary graphics to the final size for determining added figure
The complicated process of experience is generally required with placement location and expends the more time.The present inventor regarding to the issue above into
Row research provides a kind of method for adding Sub-resolution assist features, includes the following steps：S1 is intercepted from original layout
Figure with periodic structure obtains domain to be modified；Domain to be modified is modified by reversed photoetching technique, is obtained by S2
Domain after to amendment, domain includes the main graphic and secondary graphics for meeting imaging requirements after amendment；S3 schemes main graphic and auxiliary
Shape separation, and secondary graphics are added in original layout and carry out the optical proximity correction based on model.
Due to being to intercept to have from original layout in the method for above-mentioned addition Sub-resolution assist features of the invention
Then the figure of periodic structure is modified by reversed photoetching technique, later separate main graphic and secondary graphics, and will be auxiliary
It helps figure to be added in original layout and carries out the optical proximity correction based on model, to change in optical proximity correction work
The software tool for adding the mode of Sub-resolution assist features and using, it is auxiliary that the period domain that can effectively shorten adds Subresolution
The time cycle for helping figure, the measuring and calculating for not needing to design special test mask and being put by multiple figure, do not need yet into
The test of row multiple exposure has the advantages that inexpensive and time-saving.In addition, the above method can be applied to it is a variety of have the period knot
The addition of the Sub-resolution assist features of the domain of structure is particularly suitable for 22 nanometer nodes period domains.
The exemplary of the method for the addition Sub-resolution assist features provided according to the present invention is provided
Embodiment.However, these illustrative embodiments can be implemented by many different forms, and it is not construed as
It is only limited to embodiments set forth herein.It should be understood that thesing embodiments are provided so that the public affairs of the application
It opens thorough and complete, and the design of these illustrative embodiments is fully conveyed to those of ordinary skill in the art.
Firstly, executing step S1：Interception has the figure 10 of periodic structure from original layout, obtains domain to be modified,
As shown in Figure 1.Above-mentioned original layout can be the design layout of 22nm node, or other sizes with periodic structure
Domain, its ambient enviroment of the domain of interception are still that periodically, Fig. 1 show a part of interception domain, remaining does not show
Part and the periodic structure having the same of figure shown in Fig. 1.
In above-mentioned steps S1, the size of the domain to be modified obtained after interception wants moderate, subsequent is carried out to it with improving
The arithmetic speed that reversed photoetching calculates, it is preferable that the size of above-mentioned domain to be modified is 10 μm to 30 μm of 30 μ m of 10 μ m.
After above-mentioned steps S1, step S2 is executed：Domain to be modified is modified by reversed photoetching technique, is obtained
Domain after amendment, domain includes the main graphic 11 and secondary graphics 12 for meeting imaging requirements after amendment, as shown in Figure 2.Imaging is
Refer to that load carries out the model used when optical proximity correction, by the emulation of optical proximity correction software using domain as input
Obtain the process of respective graphical output.
Above-mentioned reversed photoetching technique be it is a kind of for figure synthesis or graphic designs technology, due to reversed photoetching technique
Based entirely on mathematical method, domain is discretized into pixel-matrix, very little is relied on for the topological structure of domain, thus compared to
Optical proximity correction based on model can be preferably applied for the domain sufficiently complex for topological structure.
Reversed photoetching technique calculates a figure when in use and obtains needed for given imaging system generation as input
Output image.As soon as the first step for solving an inverse problem is to define a forward direction (or process) model, this forward model
It is the mathematical description (may be approximate) of given imaging system.Imaging process of the lithography system from mask to silicon wafer is divided into
Two steps：The calculating of spatial image and emulation photoresist.I.e. above-mentioned forward model consists of two parts, respectively optical system model
With photoresist model, the calculating of spatial image is based on basic optical system model (coherency model, incoherent model or portion
Divide coherency model).And the photoresist model for emulating photoresist has Dills model, Mack model, constant threshold model, variable threshold value
Model or other models.
The forming process of image can be described as in reversed photoetching technique with mathematics：
Z (x, y)=T { m (x, y) }
Wherein, m (x, y) is used as input intensity function, and corresponding to the mask pattern of input, m (x, y) is used as output intensity letter
Number, corresponding to the figure on the silicon wafer of output, T { } be matched with input intensity function m (x, y) and output intensity function z (x,
Y) operator between.Defining z* (x, y) is dreamboat intensity function, corresponding to the targeted graphical on silicon wafer.Reversed photoetching skill
The target of art is estimation input intensity function, to give the proximity values of one He desired output z* (x, y).Therefore, reversely
Photoetching technique is found under forward model effect, and the domain of z* (x, y) is corresponded to：
Wherein, d {, } indicates the cost function of lithography system, it is by figure and targeted graphical is actually calculated
Two norms determine, above-mentioned domain be correct after domain.
In a preferred embodiment, above-mentioned steps S2 includes the following steps：S21 passes through domain to be modified anti-
It is modified to photoetching technique, obtains domain to be verified, domain to be verified includes main graphic 11 to be verified and auxiliary figure to be verified
Shape 12；S22 carries out imaging simulation verifying to domain to be verified to obtain simulation figure；S23, by simulation figure and test pattern
It is compared to obtain comparison result, when comparison result is more than allowable error, adjusts the calculating parameter of reversed photoetching technique, and
Repeat step S21；When comparison result is no more than allowable error, domain after being corrected.
In above-mentioned preferred embodiment, first with reversed photoetching technique to interception obtain with periodic structure
Domain to be modified is modified, then using emulation software tool in step S21 pass through reversed photoetching calculate it is obtained to
It verifies domain and carries out imaging simulation, the calculating parameter by constantly adjusting reversed photoetching is calculated again, the version after amendment
Figure in figure meets imaging requirements.In order to make the quickly complex imaging requirement of revised domain, it is preferable that above-mentioned adjustment
The calculating parameter of reversed photoetching includes the number of iterations and process conditions；It is further preferable that process conditions include：Process conditions include
The fluctuation of exposure energy is in ± 5% range of standard exposure dosage, defocus is ± 40nm.
In above-mentioned steps S23, test pattern, which refers to, carries out geometric parameter setting according to Target figure, by optical adjacent
The ideal image figure with smooth effect that fixed software generates, by simulation figure obtained in step S22 and the standard drawing
Shape is compared to obtain comparison result, and comparison result is compared with allowable error, when comparison result is more than to allow to miss
When poor, then judge that domain obtained by calculating through reversed photoetching is unsatisfactory for imaging requirements, when comparison result is no more than allowable error,
Then judge that domain obtained by calculating through reversed photoetching meets imaging requirements, carries out subsequent main graphic 11 and auxiliary as domain after amendment
Help the separation of figure 12.
Above-mentioned allowable error can be defined as be more than ± 1nm edge placement error (edge placement error,
EPE), specifically, when the edge placement error of comparison result (edge placement error, EPE) is more than ± 1nm, then
Judge that domain obtained by calculating through reversed photoetching is unsatisfactory for imaging requirements, as the edge placement error (edge of comparison result
Placement error, EPE) be no more than ± 1nm when, then judge through reversed photoetching calculate obtained by domain meet imaging requirements.
After above-mentioned steps S2, step S3 is executed：By the master map in domain after the amendment obtained through reversed photoetching technique
Shape 11 and secondary graphics 12 separate, and secondary graphics 12 are added in original layout and carry out the optical proximity correction based on model.
Since main graphic 11 and secondary graphics 12 are in same photoetching in domain after the amendment that obtains after above-mentioned steps S2
Layer, and main graphic 11 and the topological structure of secondary graphics 12 are also complexity, easily lead to the mask plate using the domain as target
It is difficult to manufacture.In order to overcome the above problem, in a preferred embodiment, above-mentioned steps S3 includes the following steps：S31,
Main graphic 11 and secondary graphics 12 are separated and simplified, as shown in Figures 3 to 5；Simplified secondary graphics 12 are added S32
The optical proximity correction based on model is carried out in original layout, obtained pattern imaging result is as shown in Figure 6.
Secondary graphics 12 are added in master figure and carry out the optical proximity correction based on model again after simplification, it
Main graphic and secondary graphics afterwards can meet fabrication mask requirement and resolution requirement, be added to Sub-resolution assist features
With carried out pattern imaging result 20 after the optical proximity correction based on model as shown in fig. 6, outside pattern imaging result 20
Side is the Target figure of cycle graph.
In above-mentioned preferred embodiment, it is further preferable that above-mentioned steps S31 includes the following steps：S311, to amendment
Domain carries out the first simplified processing afterwards, so that main graphic 11 and secondary graphics 12 have straight flange structure, as shown in Figure 3；S312, will
Main graphic 11 and secondary graphics 12 separate, so that main graphic 11 and secondary graphics 12 are in different photoetching figure layers, wherein assisting
The photoetching figure layer of figure 12 is as shown in Figure 4；S313 carries out second to secondary graphics 12 and simplifies processing, so that secondary graphics 12 accord with
The requirement of addition Sub-resolution assist features is closed, as shown in Figure 5.
Firstly, figure rule limit is added to the figure that reversed photoetching technique is modified in above-mentioned steps S311
System, takes certain operation that main graphic 11 and secondary graphics 12 are further constrained to the shape with straight flange structure；Then, exist
In above-mentioned steps S312, main graphic 11 and secondary graphics 12 are separated, make the two in different photoetching figure layers；Finally, upper
It states in step S313, the secondary graphics 12 that step 104 obtains is further simplified, comply with the general Subresolution of addition
The requirement of secondary graphics.
The method of above-mentioned addition Sub-resolution assist features provided by the present invention utilizes in integrated circuit production process mutually
Joining layer domain has this feature of periodic structure, is all same periodic structures in domain in conjunction with the reversed lithography tool of OPC software
Figure add Sub-resolution assist features.Its tool used and material are：The layout file of pending optical proximity correction,
Lithography simulation model data file comprising optical model and photoresist model can carry out the optics neighbour based on model to domain
Nearly modified software tool, the software tool of reversed photoetching calculating can be carried out to domain, domain can be read and to domain into
The software tool of row imaging simulation.
According to another aspect of the present invention, a kind of production method of mask plate is provided, is included the following steps：Firstly, right
Original layout is modified, and obtains amendment domain, and modified method is the method for above-mentioned addition Sub-resolution assist features；So
Afterwards, the production of plate is masked according to amendment domain.
According to another aspect of the present invention, a kind of photoetching technological method is additionally provided, is included the following steps：Firstly, using
The production method of aforementioned mask plate makes to form mask plate；Then, photoetching process is carried out using aforementioned mask plate, in photoresist
It is middle to form figure corresponding with mask plate.
The method for further illustrating addition Sub-resolution assist features provided by the invention below in conjunction with embodiment.
Embodiment 1
The method of addition Sub-resolution assist features provided in this embodiment is as shown in fig. 7, comprises following steps：
1, figure of the interception containing appropriate periodic structure from the original layout of pending optical proximity correction, obtains to be repaired
Positive domain and the input domain as next step, as shown in Figure 1；
2, the domain to be modified of interception is modified by reversed photoetching technique software, obtains modified version to be verified
Figure, as shown in Figure 2；
3, imaging simulation verifying is carried out to main graphic in obtained domain to be verified and secondary graphics, if judging version to be verified
Figure is unsatisfactory for imaging requirements, then adjusts the calculating parameter of reversed photoetching technique, and repeats step 2, until obtaining meeting into
As desired main graphic and secondary graphics；
4, it will simplify by reversed photoetching technique treated main graphic and secondary graphics, and be reduced to have straight
The main graphic and secondary graphics of side structure, as shown in Figure 3；
5, by with straight flange structure main graphic and secondary graphics separate, as shown in figure 4, and will be obtained after separation
Secondary graphics are further simplified, and so that it is met design rule and fabrication mask requirement, as shown in Figure 5；
6, simplified secondary graphics are added in original layout by period profile, and carry out optical proximity correction and obtains
New figure distribution, as shown in Figure 6.
It can be seen from the above description that the above embodiments of the present invention realize following technical effect：
The above method is directed to the domain with periodic structure, and sub- differentiate is added in optical proximity correction work by changing
The mode of rate secondary graphics and the software tool used add secondary graphics, and the period domain that can effectively shorten addition is sub- differentiates
The time cycle of rate secondary graphics does not need the measuring and calculating for designing special test mask and putting by multiple figure, is not required to yet
Multiple exposure test is carried out, is had the advantages that inexpensive and time-saving.In addition, method involved in the present invention can be applied to
The addition of the Sub-resolution assist features of a variety of domains with periodic structure is particularly suitable for 22 nanometer nodes period domains.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (8)
1. a kind of method for adding Sub-resolution assist features, which is characterized in that include the following steps：
S1, interception has the figure of periodic structure from original layout, obtains domain to be modified；
The domain to be modified is modified, domain after being corrected, domain after the amendment by S2 by reversed photoetching technique
Main graphic and secondary graphics including meeting imaging requirements；
S3 separates the main graphic and the secondary graphics, and the secondary graphics are added in the original layout and are carried out
Optical proximity correction based on model.
2. the method according to claim 1, wherein in the step S1, the size of the domain to be modified
It is 30 μm of 10 μ m, 10 μm~30 μ m.
3. the method according to claim 1, wherein the step S2 includes the following steps：
The domain to be modified is modified by reversed photoetching technique, obtains domain to be verified, the version to be verified by S21
Figure includes main graphic to be verified and secondary graphics to be verified；
S22 carries out imaging simulation verifying to the domain to be verified to obtain simulation figure；
The simulation figure is compared with test pattern to obtain comparison result by S23,
When the comparison result is more than allowable error, the calculating parameter of the reversed photoetching technique is adjusted, and repeats institute
State step S21；
When the comparison result is no more than allowable error, domain after the amendment is obtained.
4. according to the method described in claim 3, it is characterized in that, the calculating parameter includes the number of iterations and process conditions,
It is preferred that the process conditions include：The fluctuation of exposure energy standard exposure dosage ± 5% range in, defocusing amount be ±
40nm。
5. the method according to claim 1, wherein the step S3 includes the following steps：
The main graphic and the secondary graphics are separated and are simplified by S31；
The simplified secondary graphics are added in the original layout and carry out the optical proximity correction based on model by S32.
6. according to the method described in claim 5, it is characterized in that, the step S31 includes the following steps：
S311 carries out first to domain after the amendment and simplifies processing, so that the main graphic and the secondary graphics have directly
Side structure；
S312 separates the main graphic and the secondary graphics, so that the main graphic and the secondary graphics are in difference
Photoetching figure layer；
S313 carries out second to the secondary graphics and simplifies processing, so that the secondary graphics meet addition Subresolution auxiliary
The requirement of figure.
7. a kind of production method of mask plate, which is characterized in that include the following steps：
Original layout is modified, amendment domain is obtained, the modified method is described in any one of claims 1 to 6
Addition Sub-resolution assist features method；
The production of the mask plate is carried out according to amendment domain.
8. a kind of photoetching technological method, which is characterized in that include the following steps：
It is made to form the mask plate of the production method of the mask plate described in claim 7；
Photoetching process is carried out using the mask plate, forms patterned photoresist.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109445244A (en) * | 2018-12-25 | 2019-03-08 | 上海微阱电子科技有限公司 | A kind of optimization method of secondary graphics |
| CN110187600A (en) * | 2019-06-03 | 2019-08-30 | 中国科学院微电子研究所 | A method of SRAF is added according to rule |
| CN110221516A (en) * | 2019-05-17 | 2019-09-10 | 中国科学院微电子研究所 | Adding method, adding set, storage medium and the processor of secondary graphics |
| CN111367149A (en) * | 2020-04-10 | 2020-07-03 | 联合微电子中心有限责任公司 | Optical proximity correction method for curve pattern |
| CN111596521A (en) * | 2020-05-25 | 2020-08-28 | 上海华力集成电路制造有限公司 | Layout structure for improving exposure resolution and manufacturing method |
| CN112987489A (en) * | 2021-02-22 | 2021-06-18 | 上海华力集成电路制造有限公司 | OPC correction method for layout with device auxiliary graph |
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| CN111367149A (en) * | 2020-04-10 | 2020-07-03 | 联合微电子中心有限责任公司 | Optical proximity correction method for curve pattern |
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| CN111596521B (en) * | 2020-05-25 | 2023-08-15 | 上海华力集成电路制造有限公司 | Layout structure for improving exposure resolution and manufacturing method |
| CN112987489B (en) * | 2021-02-22 | 2024-01-09 | 上海华力集成电路制造有限公司 | OPC correction method for layout with auxiliary graph of device |
| CN112987489A (en) * | 2021-02-22 | 2021-06-18 | 上海华力集成电路制造有限公司 | OPC correction method for layout with device auxiliary graph |
| CN113075866A (en) * | 2021-03-23 | 2021-07-06 | 广东省大湾区集成电路与系统应用研究院 | Method for manufacturing semiconductor device |
| CN113238460A (en) * | 2021-04-16 | 2021-08-10 | 厦门大学 | Deep learning-based optical proximity correction method for extreme ultraviolet |
| CN113238460B (en) * | 2021-04-16 | 2022-02-11 | 厦门大学 | Deep learning-based optical proximity correction method for extreme ultraviolet |
| CN116841135B (en) * | 2023-08-31 | 2023-10-31 | 光科芯图(北京)科技有限公司 | Mask pattern optimization method, mask pattern optimization device, exposure equipment and storage medium |
| CN116841135A (en) * | 2023-08-31 | 2023-10-03 | 光科芯图(北京)科技有限公司 | Mask pattern optimization method, mask pattern optimization device, exposure equipment and storage medium |
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