CN111595860A - Novel device and method for simultaneously and completely aplanatic confocal imaging detection of adjacent double surfaces of semiconductor refrigerating device crystal grains - Google Patents

Novel device and method for simultaneously and completely aplanatic confocal imaging detection of adjacent double surfaces of semiconductor refrigerating device crystal grains Download PDF

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CN111595860A
CN111595860A CN202010555191.3A CN202010555191A CN111595860A CN 111595860 A CN111595860 A CN 111595860A CN 202010555191 A CN202010555191 A CN 202010555191A CN 111595860 A CN111595860 A CN 111595860A
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crystal grain
prism
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廖廷俤
颜少彬
黄启禄
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Quanzhou Normal University
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Abstract

The invention relates to a novel device and a method for detecting the simultaneous and complete aplanatic confocal imaging of adjacent double surfaces of a semiconductor refrigerating device crystal grain, which respectively adopt a specially designed reflection image-rotating prism or a specially designed cubic beam splitting image combiner/image combiner in the adjacent double-surface imaging light path to realize the spatial separation of double-surface imaging.

Description

Novel device and method for simultaneously and completely aplanatic confocal imaging detection of adjacent double surfaces of semiconductor refrigerating device crystal grains
The technical field is as follows:
the invention belongs to the field of optical detection and machine vision, and particularly relates to a novel device and a novel method for simultaneously and completely aplanatic confocal imaging detection of two adjacent surfaces of a semiconductor refrigerating device crystal grain.
Background art:
the complete aplanatic confocal imaging of the semiconductor crystal grain double-sided imaging detection light path is one of the main core technical problems to be solved, and based on different methods, the patent applications already filed by the research of the semiconductor crystal grain adjacent double-sided simultaneous defect imaging detection technology comprise:
fig. 1 is application No. 202010171706X, and the proposed optical detection apparatus and method well solves the problem of "quasi" confocal imaging detection of the adjacent surface of the semiconductor crystal grain, but there still exists an optical path difference between the adjacent two-sided imaging optical paths, and in order to obtain simultaneous confocal imaging of the adjacent surface, it is necessary to select a telecentric imaging lens with a large depth of field to compensate the small optical path difference, so that it is necessary to find a new way for complete aplanatic confocal imaging detection of the adjacent surface of the crystal grain.
Fig. 2 provides a new method for simultaneous and complete aplanatic confocal imaging detection of adjacent surfaces of a semiconductor crystal grain based on a two-color separation imaging method, fig. 3 and 4 use a polarization beam splitter to obtain two beams of illumination beams with mutually perpendicular polarization directions, and respectively illuminate the adjacent two surfaces of the semiconductor crystal grain to be detected, and further provide a method based on polarized light separation imaging (polarization separation for short): or directly using a polarization camera to realize simultaneous complete aplanatic confocal imaging detection of the adjacent surfaces of the semiconductor crystal grains (as shown in fig. 3); or combining a polarization splitting prism assembly and using a common CMOS or CCD camera to realize the simultaneous complete aplanatic confocal imaging detection of the adjacent surfaces of the semiconductor crystal grains (as shown in FIG. 4).
However, the above-mentioned apparatus and method use either a polarization optical element or a CMOS polarization camera, which makes the optical and precision mechanical structure of the detection system more complicated, and increases the cost of the detection apparatus.
The invention content is as follows:
the invention aims to provide a novel device and a method for simultaneously and completely aplanatic confocal imaging detection of two adjacent surfaces of a semiconductor refrigerating device crystal grain.
The invention relates to a new device for simultaneously and completely aplanatic confocal imaging detection of two adjacent surfaces of a semiconductor refrigerating device crystal grain, which is characterized in that: the system comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitting and image combining device, a semiconductor crystal grain and a transparent glass objective table for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera, the telecentric imaging lens, the cubic beam splitting and image combining device, the semiconductor crystal grain and the transparent glass objective table are arranged in the direction of a light path; the side right-angle image-rotating prism and the cubic beam splitting and image combining device are positioned on the optical axis of the telecentric imaging lens, a first right-angle surface of the side right-angle image-rotating prism is vertical to the optical axis of the telecentric imaging lens and opposite to the first surface of the cubic beam splitting and image combining device, a second right-angle surface of the side right-angle image-rotating prism is parallel and opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side right-angle image-rotating prism and the optical axis of the telecentric imaging lens are obliquely arranged; the first right-angle surface of the top right-angle image-rotating prism is parallel to the optical axis of the telecentric imaging lens and is opposite to the second surface of the cubic beam splitting and image combining device, the second right-angle surface of the top right-angle image-rotating prism is parallel and opposite to the semiconductor crystal grain top surface, and the inclined surface of the top right-angle image-rotating prism is obliquely arranged with the optical axis of the telecentric imaging lens; the first surface and the second surface of the cubic beam splitting and image combining device respectively form a light wedge angle with the normal surface and the optical axis of the telecentric imaging lens, a coaxial external illumination light source is arranged beside the fourth surface opposite to the second surface of the cubic beam splitting and image combining device, and the top surface and the side surface of the semiconductor crystal grain are respectively imaged on the sensor surface of the camera in a confocal mode through a top surface right-angle image rotating prism, a side surface right-angle image rotating prism and the cubic beam splitting and image combining device in a complete aplanatism mode so as to obtain independent images of the two surfaces of the semiconductor crystal grain on a CMOS or CCD camera.
Further, the first and second faces of the cubic beam splitter/combiner have an optical wedge angle of α1And α2，α1And α2To form a standThe two beam splitting prisms of the square beam combiner deviate from the right-angled wedge angle, and the four angles of the cubic beam combiner are 90 degrees and 90- α degrees1，90°，90°+α2；Light wedge angle α1And α2The double-sided imaging light beams respectively generate angular displacement gamma towards two sides of the optical axis of the cubic beam splitting and imaging device1And gamma2And γ1And gamma2Is determined by the refractive index n of the cubic beam splitter and the equivalent glass wedge angle α1And α2The image of the adjacent faces of the semiconductor die output from the cube beam splitter is spatially separated, wedge angle α1Resulting in an angular displacement gamma1=（n-1）xα1，γ2=（n-1）xα2And the angular interval of the two-sided image is gamma = gamma1+γ2(ii) a The distance between the center of the cubic beam splitting image combiner and the center of the inclined plane of the side reflection image rotation prism is D/2+ D, the working distance WD of a side imaging light path is = D/2+ D/2, the cubic beam splitting image combiner and the inclined plane of the top reflection image rotation prism are on the same horizontal height, the distance between the cubic beam splitting image combiner and the inclined plane of the top reflection image rotation prism is D/2+ D, and the working distance WD of the top imaging light path is = D/2+ D/2; d is the width of the transparent glass objective table, and D is the right-angle side length of the prism.
Furthermore, the center of the cubic beam splitter and combiner, the centers of the reflecting surfaces of the two right-angle relay prisms and the center of the semiconductor crystal grain are connected to form a square symmetrical optical path structure with the side length of D/2+ D =37.5mm, D is the width of the transparent glass object stage, D is the side length of the prism, the size of the cubic beam splitter and combiner is 15 x 15mm, the cubic beam splitter and combiner is aligned with the side edges of the right-angle relay prisms on the top surface and the side surface, and the wedge angle α of the equivalent glass optical wedge of the splitting prism of the cubic beam splitter and combiner1=α2=2 °, the four angles of the cubic beam splitter/combiner are 90 °, 88 °, 90 °, 92 °
(ii) a The glass material of the cubic beam splitter-combiner is K9, and the angular displacement gamma is calculated1=γ2=（n-1）xα2=1.03 °, resulting in a double-image angular displacement γ =2.06 °, corresponding to a space = γ xL =2.21mm, a focal length f =51.5mm, WD =110 mm,
Figure 100002_DEST_PATH_IMAGE002
(i is the thickness of the crystal grains).
Furthermore, the size of the top reflection image transfer prism is 15 × 15mm, the size of the side reflection image transfer prism is 15 × 15mm, and the size of the cubic beam splitter/combiner is 15 × 15 mm; the working distance WD = D/2+ D/2=30mm, and the double-image angular displacement error generated by the angle manufacturing tolerance (less than or equal to 15 arc seconds) of the cubic beam splitter and the relay prism is controlled within 2 arc minutes.
The invention discloses a confocal imaging detection method for simultaneously and completely aplanatism of two adjacent surfaces of a crystal grain of a semiconductor refrigerating device, which is characterized by comprising the following steps of: the novel device for simultaneously and completely aplanatic confocal imaging detection of two adjacent surfaces of a semiconductor refrigerating device crystal grain comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitting and image combining device, a semiconductor crystal grain and a transparent glass object stage for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera, the telecentric imaging lens, the cubic beam splitting and image combining device, the semiconductor crystal grain and the transparent glass object stage are arranged in the direction of a light path; the side right-angle image-rotating prism and the cubic beam splitting and image combining device are positioned on the optical axis of the telecentric imaging lens, a first right-angle surface of the side right-angle image-rotating prism is vertical to the optical axis of the telecentric imaging lens and opposite to the first surface of the cubic beam splitting and image combining device, a second right-angle surface of the side right-angle image-rotating prism is parallel and opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side right-angle image-rotating prism and the optical axis of the telecentric imaging lens are obliquely arranged; the first right-angle surface of the top right-angle image-rotating prism is parallel to the optical axis of the telecentric imaging lens and is opposite to the second surface of the cubic beam splitting and image combining device, the second right-angle surface of the top right-angle image-rotating prism is parallel and opposite to the semiconductor crystal grain top surface, and the inclined surface of the top right-angle image-rotating prism is obliquely arranged with the optical axis of the telecentric imaging lens; the first surface and the second surface of the cubic beam splitting and image combining device respectively form a light wedge angle with an optical axis normal surface and an optical axis of the telecentric imaging lens, a coaxial external illumination light source is arranged beside a fourth surface opposite to the second surface of the cubic beam splitting and image combining device, and the top surface and the side surface of the semiconductor crystal grain are respectively imaged on a camera sensor surface in a confocal manner by a top surface right-angle image rotating prism, a side surface right-angle image rotating prism and the cubic beam splitting and image combining device in a complete aplanatism manner so as to obtain independent images of the two surfaces of the semiconductor crystal grain on a CMOS (complementary metal oxide semiconductor) or; during the detection, the detection result is obtained,
double-sided illumination light path:
the coaxial external illumination light source is divided into two illumination light beams when passing through the cubic beam splitter and combiner: one beam of light passes through the sky surface reflection image-rotating prism and illuminates the sky surface of the semiconductor crystal grain to be tested on the glass loading turntable; the other beam of illumination light illuminates the side surface of the semiconductor crystal grain to be tested after passing through the side surface reflection image-conversion prism, and the two beams of illumination light respectively illuminate two adjacent surfaces of the semiconductor crystal grain;
imaging detection light path:
two adjacent surfaces of the illuminated semiconductor crystal grain generate diffused light, an imaging light beam of the semiconductor crystal grain is inverted by the right-angle inverting prism of the sky surface and then reflected by the cubic beam splitter and combiner to reach the reference output surface, and the emergent imaging light beam generates an angular displacement gamma towards one side of the optical axis1(ii) a The imaging light beam on the side of the semiconductor crystal grain passes through the side right-angle image-rotating prism and then is transmitted by the cubic beam splitter and combiner to reach the reference output surface, and the emergent imaging light beam also generates an angular displacement gamma towards the other side of the optical axis2. Angular displacement of adjacent faces output from cubic beam-splitting combiner gamma = gamma1+γ2The space between the corresponding crystal grains and the adjacent surface is = gamma x L, L is the distance from the reflection image transfer prism to the equivalent surface, and independent images of the two surfaces are respectively obtained on a CMOS or CCD camera. The cubic beam splitting and image combining device can generate an expected angular displacement gamma while combining images1And gamma2The optical wedge device is functionally equivalent to the function of integrating an image combiner and a glass optical wedge capable of generating angular displacement of light rays.
The invention relates to a new device for simultaneously and completely aplanatic confocal imaging detection of two adjacent surfaces of a semiconductor refrigerating device crystal grain, which is characterized in that: the optical imaging device comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitting and image combining device, a semiconductor crystal grain and a transparent glass object stage for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera, the telecentric imaging lens, the cubic beam splitting and image combining device, the semiconductor crystal grain and the transparent glass object stage are arranged in the direction of an optical path; the side surface reflection image-rotating prism and the cubic beam splitting image combiner are positioned on the optical axis of the telecentric imaging lens, meanwhile, a first surface of the side surface reflection image-rotating prism and the normal surface of the optical axis of the telecentric imaging lens form a light wedge angle and are opposite to the first surface of the cubic beam splitting image combiner, a second surface of the side surface reflection image-rotating prism is parallel and opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side surface reflection image-rotating prism and the optical axis of the telecentric imaging lens are obliquely arranged; the first surface of the top surface reflection image rotating prism and the optical axis of the telecentric imaging lens form a light wedge angle and are opposite to the second surface of the cubic beam splitting and image combining device, the second surface of the top surface reflection image rotating prism is parallel and opposite to the semiconductor crystal grain top surface, and the inclined surface of the top surface reflection image rotating prism and the optical axis of the telecentric imaging lens are obliquely arranged; the side of the fourth surface opposite to the second surface of the cubic beam splitting and image combining device is provided with a coaxial external illumination light source, the top surface and the side surface of the semiconductor crystal grain are respectively subjected to confocal imaging on the sensor surface of the camera in a complete aplanatism through the top surface reflection and image rotation prism, the side surface reflection and image rotation prism and the cubic beam splitting and image combining device, so that independent images of the two surfaces of the semiconductor crystal grain are obtained on a CMOS or CCD camera.
The invention relates to a new device for simultaneously and completely aplanatic confocal imaging detection of two adjacent surfaces of a semiconductor refrigerating device crystal grain, which is characterized in that: the optical imaging device comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitting and image combining device, a semiconductor crystal grain and a transparent glass object stage for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera, the telecentric imaging lens, the cubic beam splitting and image combining device, the semiconductor crystal grain and the transparent glass object stage are arranged in the direction of an optical path; the side surface reflection image rotating prism and the cubic beam splitting and image combining device are positioned on the optical axis of the telecentric imaging lens, a second surface of the side surface reflection image rotating prism and the optical axis of the telecentric imaging lens form an optical wedge angle and are opposite to the side surface of the semiconductor crystal grain, the first surface of the side surface reflection image rotating prism is parallel and opposite to the first surface of the cubic beam splitting and image combining device, and the inclined surface of the side surface reflection image rotating prism and the optical axis of the telecentric imaging lens are obliquely arranged; the second surface of the top surface reflection image-rotating prism forms a light wedge angle with the normal surface of the optical axis of the telecentric imaging lens and is opposite to the semiconductor crystal grain top surface, the first surface of the top surface reflection image-rotating prism is parallel and opposite to the second surface of the cubic beam splitting image combiner, and the inclined surface of the top surface reflection image-rotating prism and the optical axis of the telecentric imaging lens are obliquely arranged; the side of the fourth surface opposite to the second surface of the cubic beam splitting and image combining device is provided with a coaxial external illumination light source, the top surface and the side surface of the semiconductor crystal grain are respectively subjected to confocal imaging on the sensor surface of the camera in a complete aplanatism through the top surface reflection and image rotation prism, the side surface reflection and image rotation prism and the cubic beam splitting and image combining device, so that independent images of the two surfaces of the semiconductor crystal grain are obtained on a CMOS or CCD camera.
Further, the optical wedge angle between the top reflection relay prism and the first surface of the side reflection relay prism is α1And α2The degree of the first surfaces of the two reflection rotating image prisms deviating from the right angle is obtained, and the three angles of the reflection rotating image prism of the top surface are 45 degrees, 90 degrees to α degrees1，45°+α1；The three angles of the side reflection image rotation prism are 45 degrees, 90 degrees + α2、45°-α2Wedge angle α1And α2The double-sided imaging light beams respectively generate angular displacement gamma towards two sides of the optical axis of the cubic beam splitting and imaging device1And gamma2And γ1And gamma2Is determined by the refractive index n of the glass of the reflection relay prism and the equivalent glass wedge angle α1And α2The image of the adjacent faces of the semiconductor die output from the cube beam splitter is spatially separated, wedge angle α1Resulting in an angular displacement gamma1=（n-1）xα1，γ2=（n-1）xα2And the angular interval of the two-sided image is gamma = gamma1+γ2(ii) a The distance between the center of the cubic beam splitter and the center of the inclined plane of the side reflection relay prism is D/2+ D, the working distance WD of the side imaging light path is = D/2+ D/2, the cubic beam splitter and the inclined plane of the top reflection relay prism are on the same horizontal height,the distance between the two is D/2+ D, and the working distance WD of the imaging optical path of the sky is = D/2+ D/2; d is the width of the transparent glass objective table, and D is the right-angle side length of the prism.
Furthermore, the center of a cubic beam splitter and combiner, the centers of the reflecting surfaces of two reflecting rotating image prisms and the center of a semiconductor crystal grain are connected to form a square symmetrical optical path structure with the side length of D/2+ D =37.5mm, D is the width of a transparent glass object stage, D is the side length of the prisms, the size of the cubic beam splitter and combiner is 15 x 15mm, the cubic beam splitter and combiner is aligned with the side edges of the top surface reflecting rotating image prisms and the side surface reflecting rotating image prisms, the optical wedge angle α =2 degrees of the equivalent glass optical wedge of the top surface reflecting rotating image prisms and the side surface reflecting rotating image prisms, the three angles of the top surface reflecting rotating image prisms are 45 degrees, 88 degrees and 47 degrees, the three angles of the side surface reflecting rotating image prisms are 45 degrees, 92 degrees and 43 degrees, the glass material of the top surface reflecting rotating image prisms is K9, and1=γ2=（n-1）xα2=1.03 °, resulting in a double-image angular displacement γ =2.06 °, corresponding to a space = γ xL =1.42mm, a focal length f =51.5mm, WD =110 mm,
Figure 100002_DEST_PATH_IMAGE004
(i is the thickness of the crystal grains).
Furthermore, the size of the top reflection image transfer prism is 15 × 15mm, the size of the side reflection image transfer prism is 15 × 15mm, and the size of the cubic beam splitter/combiner is 15 × 15 mm; the working distance WD = D/2+ D/2=30mm, and the double-image angular displacement error generated by the angle manufacturing tolerance (less than or equal to 15 arc seconds) of the cubic beam splitter and the relay prism is controlled within 2 arc minutes.
The invention relates to a semiconductor refrigeration device crystal grain adjacent double-sided simultaneous complete aplanatic confocal imaging detection method, which comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitting and image combining device, a semiconductor crystal grain and a transparent glass objective table for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera, the telecentric imaging lens, the cubic beam splitting and image combining device, the semiconductor crystal grain and the transparent glass objective table are arranged in the light path direction; the side surface reflection image-rotating prism and the cubic beam splitting image combiner are positioned on the optical axis of the telecentric imaging lens, meanwhile, a first surface of the side surface reflection image-rotating prism and the normal surface of the optical axis of the telecentric imaging lens form a light wedge angle and are opposite to the first surface of the cubic beam splitting image combiner, a second surface of the side surface reflection image-rotating prism is parallel and opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side surface reflection image-rotating prism and the optical axis of the telecentric imaging lens are obliquely arranged; the first surface of the top surface reflection image rotating prism and the optical axis of the telecentric imaging lens form a light wedge angle and are opposite to the second surface of the cubic beam splitting and image combining device, the second surface of the top surface reflection image rotating prism is parallel and opposite to the semiconductor crystal grain top surface, and the inclined surface of the top surface reflection image rotating prism and the optical axis of the telecentric imaging lens are obliquely arranged; a coaxial external illumination light source is arranged beside a fourth surface opposite to the second surface of the cubic beam splitting and image combining device, and the top surface and the side surface of the semiconductor crystal grain are subjected to confocal imaging on the sensor surface of the camera in a complete aplanatism way through the top surface reflection image rotating prism, the side surface reflection image rotating prism and the cubic beam splitting and image combining device respectively so as to obtain independent images of the two surfaces of the semiconductor crystal grain on a CMOS (complementary metal oxide semiconductor) or CCD (charge coupled device) camera; during the detection, the detection result is obtained,
double-sided illumination light path:
the coaxial external illumination light source is divided into two illumination light beams when passing through the cubic beam splitter and combiner: one beam of light passes through the sky surface reflection image-rotating prism and illuminates the sky surface of the semiconductor crystal grain to be tested on the glass loading turntable; the other beam of illumination light illuminates the side surface of the semiconductor crystal grain to be tested after passing through the side surface reflection image-conversion prism, and the two beams of illumination light respectively illuminate two adjacent surfaces of the semiconductor crystal grain;
imaging detection light path:
two adjacent surfaces of the illuminated semiconductor crystal grain generate diffused light, and an imaging light beam emitted from the top surface of the semiconductor crystal grain after being reflected by the top surface and transferred to the image prism generates an angular displacement gamma to one side of an optical axis1Then reflected by the cubic beam splitter and combiner to reach the reference output surface; the imaging light beam at the side of the semiconductor crystal grain is reflected by the side surface to form a rotating image prismThe emergent imaging light beam generates an angular displacement gamma towards the other side of the optical axis2Then transmitted by the cubic beam splitter to the reference output surface, and the angular displacement gamma = gamma of the adjacent surface output from the cubic beam splitter1+γ2The corresponding spacing between adjacent crystal grain surfaces = gamma x L, L is the distance between the reflection image transfer prism and the equivalent surface, and two independent images are respectively obtained on the CMOS or CCD camera, and the reflection image transfer prism can generate an expected angular displacement gamma at the same time of image transfer1And gamma2The optical wedge is functionally equivalent to a right-angle rotating image prism and is integrated with a glass optical wedge capable of generating angular displacement of light rays.
The invention relates to a new device for simultaneously and completely aplanatic confocal imaging detection of two adjacent surfaces of a semiconductor refrigerating device crystal grain, which is characterized in that: the system comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitting and image combining device, a semiconductor crystal grain and a transparent glass objective table for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera, the telecentric imaging lens, the cubic beam splitting and image combining device, the semiconductor crystal grain and the transparent glass objective table are arranged in the direction of a light path; the side right-angle image-rotating prism and the cubic beam splitting and image combining device are positioned on the optical axis of the telecentric imaging lens, a first right-angle surface of the side right-angle image-rotating prism is perpendicular to the optical axis of the telecentric imaging lens and is parallel and opposite to the first surface of the cubic beam splitting and image combining device, a second right-angle surface of the side right-angle image-rotating prism is parallel and opposite to the side surface of the semiconductor crystal grain, two right-angle sides of the side right-angle image-rotating prism are unequal, and an inclined surface is obliquely arranged with the optical axis of the telecentric imaging lens; the first right-angle surface of the top right-angle image-rotating prism is parallel to the optical axis of the telecentric imaging lens and is parallel and opposite to the second surface of the cubic beam splitting and image combining device, the second right-angle surface of the top right-angle image-rotating prism is parallel and opposite to the semiconductor crystal grain top surface, two right-angle sides of the top right-angle image-rotating prism are unequal, and the inclined surface is obliquely arranged with the optical axis of the telecentric imaging lens; and a coaxial external illumination light source is arranged beside a fourth surface opposite to the second surface of the cubic beam splitting and image combining device, and the top surface and the side surface of the semiconductor crystal grain are subjected to confocal imaging on the sensor surface of the camera in a complete aplanatism way through the top surface right-angle relay prism, the side surface right-angle relay prism and the cubic beam splitting and image combining device respectively so as to obtain independent images of the two surfaces of the semiconductor crystal grain on a CMOS (complementary metal oxide semiconductor) or CCD (charge coupled device) camera.
The invention has the advantages of the new detection device and the detection method:
1) the method can realize the defect detection of the simultaneous and complete aplanatic confocal imaging of two adjacent surfaces of the semiconductor crystal grain, does not need to use a large-depth-of-field telecentric imaging lens, and solves the problem that the contradiction between the aplanatic confocal imaging of the two adjacent surfaces and the spatial separation of the images of the two surfaces cannot be solved simultaneously;
2) the imaging light path of the embodiment scheme of the application uses the specially designed celestial surface and side surface reflection image transfer prism with the glass optical wedge function, the expected angular displacement gamma or space separation of double-sided imaging can be obtained, the interval of double images can be adjusted, and the interval size depends on the design of the glass optical wedge angle of the celestial surface and side surface reflection image transfer prism (90- α)1，90°+α2）；
3) The cubic beam splitter-combiner with glass wedge function used in the imaging optical path of another embodiment of the application can obtain the expected angular displacement gamma or space separation of double-sided imaging, and the interval of the double images can be adjusted, and the interval size depends on the design of the glass wedge angle of the cubic combiner facing to the imaging optical path of the skyward and the side (90- α)1，90°+α2）；
4) This application adopts ordinary beam splitter/close looks ware, reflection rotating image prism and CMOS or CCD camera, need not to use the parallel flat board of extra glass or big depth of field telecentric imaging lens, more need not use expensive polarizing optical element and polarization CMOS sensor (camera), can effectively reduce detection device's cost, improves detection device's price/performance ratio.
5) The device for simultaneously imaging and detecting the adjacent double surfaces of the semiconductor crystal grains has the advantages of simple and compact structure, easy assembly and debugging and good reliability.
Description of the drawings:
FIGS. 1-4 illustrate conventional semiconductor die adjacent surface detection optics;
wherein 1 is a black-and-white camera, 2 is a telecentric imaging lens, 3a or 3b is a rotating image prism, 3 is an image combination optical element, 4 is a semiconductor crystal grain, 5 is a transparent glass objective table, 6 or 6a or 6b is a rotating image prism, 7 or 7a and 7b are light sources, 8 and 9 are light filters, 8a is a polarizing prism and 8b is a roof prism;
FIG. 5 is a schematic diagram of one embodiment of the apparatus of the present invention;
FIG. 6 is a schematic design diagram of the zenith, side reflection relay prism of FIG. 5;
FIG. 7 is a design schematic of a portion of FIG. 5;
FIG. 8 is a schematic diagram of another embodiment of the apparatus of the present invention;
FIG. 9 is a schematic design diagram of the zenith, side reflection relay prism of FIG. 8;
FIG. 10 is a design schematic of the portion of FIG. 8;
FIG. 11 is a schematic diagram of another embodiment of the apparatus of the present invention;
FIG. 12 is a schematic design diagram of the zenith, side reflecting relay prism of FIG. 11;
fig. 13 is a design schematic of a portion of fig. 11.
FIG. 14 is a schematic diagram of another embodiment of the apparatus of the present invention;
FIG. 15 is a schematic design diagram of the zenith, side reflecting relay prism of FIG. 11;
fig. 16 is a design schematic of a portion of fig. 11.
The specific implementation mode is as follows:
in the first embodiment of the invention, as shown in fig. 5-7, the new device for simultaneously and completely aplanatic confocal imaging detection of two adjacent surfaces of a semiconductor refrigeration device crystal grain comprises a CMOS or CCD camera 1, a telecentric imaging lens 2, a cubic beam splitting and image combining device 3, a semiconductor crystal grain 5 and a transparent glass stage 6 for bearing the semiconductor crystal grain, which are arranged in the direction of the light path, wherein a zenith right-angle relay prism 4a and a lateral right-angle relay prism 4b are respectively arranged on the light path between the semiconductor crystal grain and the cubic beam splitting and image combining device, the lateral right-angle relay prism 4b and the zenith right-angle relay prism 4a are respectively positioned on the right side part and right above the zenith of the semiconductor crystal grain, and the cubic beam splitting and image combining device and the zenith right-angle relay prism are at the same horizontal; the side right-angle image-rotating prism and the cubic beam splitting and image combining device are positioned on an optical axis A of the telecentric imaging lens, a first right-angle surface 401b of the side right-angle image-rotating prism is vertical to the optical axis of the telecentric imaging lens and opposite to a first surface 301 of the cubic beam splitting and image combining device, a second right-angle surface 402b of the side right-angle image-rotating prism is parallel and opposite to the side surface of the semiconductor crystal grain, and an inclined surface 403b of the side right-angle image-rotating prism is obliquely arranged with the optical axis of the telecentric imaging lens; a first right-angle surface 401a of the top right-angle image-rotating prism is parallel to the optical axis of the telecentric imaging lens and is opposite to the second surface 302 of the cubic beam splitting and image combining device, a second right-angle surface 402a of the top right-angle image-rotating prism is parallel and opposite to the semiconductor crystal grain top surface, and an inclined surface 403a of the top right-angle image-rotating prism is obliquely arranged with the optical axis of the telecentric imaging lens; the first surface 301 and the second surface 302 of the cubic beam splitting and image combining device respectively form an optical wedge angle with an optical axis normal surface and an optical axis of the telecentric imaging lens, a coaxial external illumination light source 7 is arranged beside a fourth surface opposite to the second surface of the cubic beam splitting and image combining device, and the top surface and the side surface of the semiconductor crystal grain are respectively imaged on a camera sensor surface in a complete aplanatism confocal mode through a top surface right-angle image rotating prism, a side surface right-angle image rotating prism and the cubic beam splitting and image combining device so as to obtain independent images of the two surfaces of the semiconductor crystal grain on a CMOS or CCD camera.
The first and second surfaces of the cubic beam splitter/combiner have an optical wedge angle of α1And α2，α1And α2In order to form the wedge angle of the two beam splitting prisms deviating from the right angle of the cubic beam splitter-combiner, the four angles of the cubic beam splitter-combiner are 90 degrees and 90- α degrees1，90°，90°+α2；Light wedge angle α1And α2The double-sided imaging light beams respectively generate angular displacement gamma towards two sides of the optical axis of the cubic beam splitting and imaging device1And gamma2And γ1And gamma2Is determined by the refractive index n of the cubic beam splitter and the equivalent glass wedge angle α1And α2The image of the adjacent faces of the semiconductor die output from the cube beam splitter is spatially separated, wedge angle α1Resulting in an angular displacement gamma1=（n-1）xα1，γ2=（n-1）xα2And the angular interval of the two-sided image is gamma = gamma1+γ2(ii) a The distance between the center of the cubic beam splitting image combiner and the center of the inclined plane of the side reflection image rotation prism is D/2+ D, the working distance WD of a side imaging light path is = D/2+ D/2, the cubic beam splitting image combiner and the inclined plane of the top reflection image rotation prism are on the same horizontal height, the distance between the cubic beam splitting image combiner and the inclined plane of the top reflection image rotation prism is D/2+ D, and the working distance WD of the top imaging light path is = D/2+ D/2; d is the width of the transparent glass objective table, and D is the right-angle side length of the prism.
The center of the cube beam splitter-combiner, the centers of the reflecting surfaces of the two right-angle relay prisms and the center of the semiconductor crystal grain are connected to form a square symmetrical optical path structure with the side length of D/2+ D =37.5mm, D is the width of the transparent glass object stage, D is the side length of the prism, the size of the cube beam splitter-combiner is 15 × 15mm, the cube beam splitter-combiner is aligned with the side edges of the zenith and side right-angle relay prisms, and the wedge angle α of the equivalent glass optical wedge of the splitter prism of the cube beam splitter-combiner1=α2=2 °, the four angles of the cubic beam splitter/combiner are 90 °, 88 °, 90 °, 92 °
(ii) a The glass material of the cubic beam splitter-combiner is K9, and the angular displacement gamma is calculated1=γ2=（n-1）xα2=1.03 °, resulting in a double-image angular displacement γ =2.06 °, corresponding to a space = γ xL =2.21mm, a focal length f =51.5mm, WD =110 mm,
Figure DEST_PATH_IMAGE002A
(i is the thickness of the crystal grains).
The size of the top reflection image transfer prism is 15 × 15mm, the size of the side reflection image transfer prism is 15 × 15mm, and the size of the cubic beam splitter/combiner is 15 × 15 mm; the working distance WD = D/2+ D/2=30mm, and the double-image angular displacement error generated by the angle manufacturing tolerance (less than or equal to 15 arc seconds) of the cubic beam splitter and the relay prism is controlled within 2 arc minutes.
The invention discloses a confocal imaging detection method for simultaneously and completely aplanatism of two adjacent surfaces of a crystal grain of a semiconductor refrigerating device, which is characterized by comprising the following steps of: the novel device for simultaneously and completely aplanatic confocal imaging detection of two adjacent surfaces of a semiconductor refrigerating device crystal grain comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitting and image combining device, a semiconductor crystal grain and a transparent glass object stage for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera, the telecentric imaging lens, the cubic beam splitting and image combining device, the semiconductor crystal grain and the transparent glass object stage are arranged in the direction of a light path; the side right-angle image-rotating prism and the cubic beam splitting and image combining device are positioned on the optical axis of the telecentric imaging lens, a first right-angle surface of the side right-angle image-rotating prism is vertical to the optical axis of the telecentric imaging lens and opposite to the first surface of the cubic beam splitting and image combining device, a second right-angle surface of the side right-angle image-rotating prism is parallel and opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side right-angle image-rotating prism and the optical axis of the telecentric imaging lens are obliquely arranged; the first right-angle surface of the top right-angle image-rotating prism is parallel to the optical axis of the telecentric imaging lens and is opposite to the second surface of the cubic beam splitting and image combining device, the second right-angle surface of the top right-angle image-rotating prism is parallel and opposite to the semiconductor crystal grain top surface, and the inclined surface of the top right-angle image-rotating prism is obliquely arranged with the optical axis of the telecentric imaging lens; the first surface and the second surface of the cubic beam splitting and image combining device respectively form a light wedge angle with an optical axis normal surface and an optical axis of the telecentric imaging lens, a coaxial external illumination light source is arranged beside a fourth surface opposite to the second surface of the cubic beam splitting and image combining device, and the top surface and the side surface of the semiconductor crystal grain are respectively imaged on a camera sensor surface in a confocal manner by a top surface right-angle image rotating prism, a side surface right-angle image rotating prism and the cubic beam splitting and image combining device in a complete aplanatism manner so as to obtain independent images of the two surfaces of the semiconductor crystal grain on a CMOS (complementary metal oxide semiconductor) or; during the detection, the detection result is obtained,
double-sided illumination light path:
the coaxial external illumination light source is divided into two illumination light beams when passing through the cubic beam splitter and combiner: one beam of light passes through the sky surface reflection image-rotating prism and illuminates the sky surface of the semiconductor crystal grain to be tested on the glass loading turntable; the other beam of illumination light illuminates the side surface of the semiconductor crystal grain to be tested after passing through the side surface reflection image-conversion prism, and the two beams of illumination light respectively illuminate two adjacent surfaces of the semiconductor crystal grain;
imaging detection light path:
two adjacent surfaces of the illuminated semiconductor crystal grain generate diffused light, an imaging light beam of the semiconductor crystal grain is inverted by the right-angle inverting prism of the sky surface and then reflected by the cubic beam splitter and combiner to reach the reference output surface, and the emergent imaging light beam generates an angular displacement gamma towards one side of the optical axis1(ii) a The imaging light beam on the side of the semiconductor crystal grain passes through the side right-angle image-rotating prism and then is transmitted by the cubic beam splitter and combiner to reach the reference output surface, and the emergent imaging light beam also generates an angular displacement gamma towards the other side of the optical axis2. Angular displacement of adjacent faces output from cubic beam-splitting combiner gamma = gamma1+γ2The space between the corresponding crystal grains and the adjacent surface is = gamma x L, L is the distance from the reflection image transfer prism to the equivalent surface, and independent images of the two surfaces are respectively obtained on a CMOS or CCD camera. The cubic beam splitting and image combining device can generate an expected angular displacement gamma while combining images1And gamma2The optical wedge device is functionally equivalent to the function of integrating an image combiner and a glass optical wedge capable of generating angular displacement of light rays.
The illumination light source can be monochromatic light, and can also be a quasi-monochromatic light source or white light with a certain spectral bandwidth.
In the second embodiment of the present invention, as shown in fig. 8-10, the new device for simultaneously detecting confocal imaging of two adjacent faces of a semiconductor refrigeration device crystal grain by complete aplanatism at the same time comprises a CMOS or CCD camera 1, a telecentric imaging lens 2, a cubic beam splitting and image combining device 3, a semiconductor crystal grain 5 and a transparent glass stage 6 for holding the semiconductor crystal grain, which are arranged in the direction of the light path, wherein a top-surface reflection and inversion prism 4a and a side-surface reflection and inversion prism 4b are respectively arranged on the light path between the semiconductor crystal grain and the cubic beam splitting and image combining device, the side-surface reflection and inversion prism 4b and the top-surface reflection and inversion prism 4a are respectively positioned at the front side part and right above the top surface of the semiconductor crystal grain, and the cubic beam splitting and image combining device 3 and the top-surface reflection; the side reflection image-rotating prism 4b and the cubic beam splitting and image combining device 3 are positioned on the optical axis A of the telecentric imaging lens, meanwhile, a first surface 401b of the side reflection image-rotating prism forms a light wedge angle with the normal surface of the optical axis of the telecentric imaging lens and is opposite to a first surface 301 of the cubic beam splitting and image combining device, a second surface 402b of the side reflection image-rotating prism is parallel and opposite to the side surface of the semiconductor crystal grain, and an inclined surface 403b of the side reflection image-rotating prism is obliquely arranged with the optical axis of the telecentric imaging lens; a first surface 401a of the top surface reflection image-rotating prism forms a light wedge angle with the optical axis of the telecentric imaging lens and is opposite to a second surface 302 of the cubic beam splitting and image combining device, a second surface 402a of the top surface reflection image-rotating prism is parallel and opposite to the top surface of the semiconductor crystal grain, and an inclined surface 403a of the top surface reflection image-rotating prism is obliquely arranged with the optical axis of the telecentric imaging lens; the coaxial external illumination light source 7 is arranged beside a fourth face 304 opposite to the second face of the cubic beam splitting and image combining device, and the top face and the side face of the semiconductor crystal grain are subjected to confocal imaging on the sensor face of the camera in a complete aplanatism way through the top face reflection and image conversion prism 4a, the side face reflection and image conversion prism 4b and the cubic beam splitting and image combining device 3 respectively so as to obtain independent images of the two faces of the semiconductor crystal grain on a CMOS or CCD camera.
The optical wedge angle between the top reflection image-rotating prism and the first surface of the side reflection image-rotating prism is α1And α2The degree of the first surfaces of the two reflection rotating image prisms deviating from the right angle is obtained, and the three angles of the reflection rotating image prism of the top surface are 45 degrees, 90 degrees to α degrees1，45°+α1；The three angles of the side reflection image rotation prism are 45 degrees, 90 degrees + α2、45°-α2Wedge angle α1And α2The double-sided imaging light beams respectively generate angular displacement gamma towards two sides of the optical axis of the cubic beam splitting and imaging device1And gamma2And γ1And gamma2Is determined by the refractive index n of the glass of the reflection relay prism and the equivalent glass wedge angle α1And α2The image of the adjacent faces of the semiconductor die output from the cube beam splitter is spatially separated, wedge angle α1Resulting in an angular displacement gamma1=（n-1）xα1，γ2=（n-1）xα2And the angular interval of the two-sided image is gamma = gamma1+γ2(ii) a The distance between the center of the cubic beam splitter and the center of the inclined plane of the side reflection relay prism is D/2+ D, the working distance WD of the side imaging light path is = D/2+ D/2, the cubic beam splitter and the inclined plane of the zenith reflection relay prism are on the same horizontal height, the distance between the cubic beam splitter and the inclined plane of the zenith reflection relay prism is D/2+ D, and the zenith imaging light isRoad working distance WD = D/2+ D/2; d is the width of the transparent glass objective table, and D is the right-angle side length of the prism.
The center of a cubic beam splitter and combiner, the centers of the reflecting surfaces of two reflecting relay prisms and the center of a semiconductor crystal grain are connected to form a square symmetrical optical path structure with the side length of D/2+ D =37.5mm, D is the width of a transparent glass object stage, D is the side length of the prism, the size of the cubic beam splitter and combiner is 15 × 15mm, the cubic beam splitter and combiner is aligned with the side edges of the zenith and side reflecting relay prisms, the optical wedge angle α =2 degrees of the equivalent glass optical wedge of the zenith and side reflecting relay prisms, the three angles of the zenith reflecting relay prisms are 45 degrees, 88 degrees and 47 degrees, the three angles of the side reflecting relay prisms are 45 degrees, 92 degrees and 43 degrees, the glass material of the zenith and side reflecting relay prisms is K9, and the angular displacement gamma is calculated1=γ2=（n-1）xα2=1.03 °, resulting in a double-image angular displacement γ =2.06 °, corresponding to a space = γ xL =1.42mm, a focal length f =51.5mm, WD =110 mm,
Figure DEST_PATH_IMAGE004A
(i is the thickness of the crystal grains).
The size of the top reflection image transfer prism is 15 × 15mm, the size of the side reflection image transfer prism is 15 × 15mm, and the size of the cubic beam splitter/combiner is 15 × 15 mm; the working distance WD = D/2+ D/2=30mm, and the double-image angular displacement error generated by the angle manufacturing tolerance (less than or equal to 15 arc seconds) of the cubic beam splitter and the relay prism is controlled within 2 arc minutes.
The invention relates to a semiconductor refrigeration device crystal grain adjacent double-side simultaneous complete aplanatic confocal imaging detection method, which comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitting and image combining device, a semiconductor crystal grain and a transparent glass object stage for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera, the telecentric imaging lens, the cubic beam splitting and image combining device, the semiconductor crystal grain and the transparent glass object stage are arranged in the light path direction; the side surface reflection image-rotating prism and the cubic beam splitting image combiner are positioned on the optical axis of the telecentric imaging lens, meanwhile, a first surface of the side surface reflection image-rotating prism and the normal surface of the optical axis of the telecentric imaging lens form a light wedge angle and are opposite to the first surface of the cubic beam splitting image combiner, a second surface of the side surface reflection image-rotating prism is parallel and opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side surface reflection image-rotating prism and the optical axis of the telecentric imaging lens are obliquely arranged; the first surface of the top surface reflection image rotating prism and the optical axis of the telecentric imaging lens form a light wedge angle and are opposite to the second surface of the cubic beam splitting and image combining device, the second surface of the top surface reflection image rotating prism is parallel and opposite to the semiconductor crystal grain top surface, and the inclined surface of the top surface reflection image rotating prism and the optical axis of the telecentric imaging lens are obliquely arranged; a coaxial external illumination light source is arranged beside a fourth surface opposite to the second surface of the cubic beam splitting and image combining device, and the top surface and the side surface of the semiconductor crystal grain are subjected to confocal imaging on the sensor surface of the camera in a complete aplanatism way through the top surface reflection image rotating prism, the side surface reflection image rotating prism and the cubic beam splitting and image combining device respectively so as to obtain independent images of the two surfaces of the semiconductor crystal grain on a CMOS (complementary metal oxide semiconductor) or CCD (charge coupled device) camera; during the detection, the detection result is obtained,
double-sided illumination light path:
the coaxial external illumination light source is divided into two illumination light beams when passing through the cubic beam splitter and combiner: one beam of light passes through the sky surface reflection image-rotating prism and illuminates the sky surface of the semiconductor crystal grain to be tested on the glass loading turntable; the other beam of illumination light illuminates the side surface of the semiconductor crystal grain to be tested after passing through the side surface reflection image-conversion prism, and the two beams of illumination light respectively illuminate two adjacent surfaces of the semiconductor crystal grain;
imaging detection light path:
two adjacent surfaces of the illuminated semiconductor crystal grain generate diffused light, and an imaging light beam emitted from the top surface of the semiconductor crystal grain after being reflected by the top surface and transferred to the image prism generates an angular displacement gamma to one side of an optical axis1Then reflected by the cubic beam splitter and combiner to reach the reference output surface; the imaging light beam emitted from the side surface of the semiconductor crystal grain through the side surface reflection image-rotating prism also produces an angular displacement gamma towards the other side of the optical axis2Then transmitted through a cubic beam splitter to the reference output surfaceAngular displacement of adjacent surfaces of beam splitting and image combining device output gamma = gamma1+γ2The corresponding spacing between adjacent crystal grain surfaces = gamma x L, L is the distance between the reflection image transfer prism and the equivalent surface, and two independent images are respectively obtained on the CMOS or CCD camera, and the reflection image transfer prism can generate an expected angular displacement gamma at the same time of image transfer1And gamma2The optical wedge is functionally equivalent to a right-angle rotating image prism and is integrated with a glass optical wedge capable of generating angular displacement of light rays.
Fig. 11-13 are a third embodiment of the present invention, which is different from the second embodiment in that the side surface reflection image transfer prism and the top surface reflection image transfer prism are not on the first surface, but on the second surface close to the semiconductor crystal grain, and the third embodiment includes a CMOS or CCD camera 1, a telecentric imaging lens 2, a cubic beam splitter and combiner 3, a semiconductor crystal grain 5 and a transparent glass stage 6 for holding the semiconductor crystal grain, which are arranged in the optical path direction, a top surface reflection image transfer prism 4a and a side surface reflection image transfer prism 4b are respectively arranged on the optical path between the semiconductor crystal grain and the cubic beam splitter and combiner, the side surface reflection image transfer prism and the top surface reflection image transfer prism are respectively located on the front side of the semiconductor crystal grain and directly above the top surface, and the cubic beam splitter and combiner 3 and the top surface reflection image transfer prism 4a are at the same horizontal height; the side surface reflection image-rotating prism 4b and the cubic beam splitting and image combining device 3 are positioned on the optical axis A of the telecentric imaging lens, meanwhile, a second surface 402b of the side surface reflection image-rotating prism forms an optical wedge angle with the optical axis of the telecentric imaging lens and is opposite to the side surface of the semiconductor crystal grain, a first surface 401b of the side surface reflection image-rotating prism is parallel and opposite to a first surface 301 of the cubic beam splitting and image combining device, and an inclined surface 403b of the side surface reflection image-rotating prism is obliquely arranged with the optical axis of the telecentric imaging lens; a second surface 402a of the top surface reflection image-rotating prism forms a light wedge angle with the normal surface of the optical axis of the telecentric imaging lens and is opposite to the semiconductor crystal grain top surface, a first surface 401a of the top surface reflection image-rotating prism is parallel and opposite to the second surface 302 of the cubic beam splitting image combiner, and an inclined surface 403a of the top surface reflection image-rotating prism is obliquely arranged with the optical axis of the telecentric imaging lens; the coaxial external illumination light source 7 is arranged beside a fourth face 304 opposite to the second face of the cubic beam splitting and image combining device, and the top face and the side face of the semiconductor crystal grain are subjected to confocal imaging on the sensor face of the camera in a complete aplanatism way through the top face reflection and image conversion prism 4a, the side face reflection and image conversion prism 4b and the cubic beam splitting and image combining device 3 respectively so as to obtain independent images of the two faces of the semiconductor crystal grain on a CMOS or CCD camera.
The working method of the third embodiment:
double-sided illumination light path:
the coaxial external illumination light source is divided into two illumination light beams when passing through the cubic beam splitter and combiner: one beam of light passes through the sky surface reflection image-rotating prism and illuminates the sky surface of the semiconductor crystal grain to be tested on the glass loading turntable; the other beam of illumination light illuminates the side surface of the semiconductor crystal grain to be tested after passing through the side surface reflection image-conversion prism, and the two beams of illumination light respectively illuminate two adjacent surfaces of the semiconductor crystal grain;
imaging detection light path:
two adjacent surfaces of the illuminated semiconductor crystal grain generate diffused light, and an imaging light beam emitted from the top surface of the semiconductor crystal grain after being reflected by the top surface and transferred to the image prism generates an angular displacement gamma to one side of an optical axis1Then reflected by the cubic beam splitter and combiner to reach the reference output surface; the imaging light beam emitted from the side surface of the semiconductor crystal grain through the side surface reflection image-rotating prism also produces an angular displacement gamma towards the other side of the optical axis2Then transmitted by the cubic beam splitter to the reference output surface, and the angular displacement gamma = gamma of the adjacent surface output from the cubic beam splitter1+γ2The corresponding spacing between adjacent crystal grain surfaces = gamma x L, L is the distance between the reflection image transfer prism and the equivalent surface, and two independent images are respectively obtained on the CMOS or CCD camera, and the reflection image transfer prism can generate an expected angular displacement gamma at the same time of image transfer1And gamma2The optical wedge is functionally equivalent to a right-angle rotating image prism and is integrated with a glass optical wedge capable of generating angular displacement of light rays.
14-16 are a fourth embodiment of the present invention, which is different from the second and third embodiments in that the side reflection relay prism and the zenith reflection relay prism are not on the first and second surfaces but on the inclined surface to form the wedge angle;
the embodiment comprises a CMOS or CCD camera 1, a telecentric imaging lens 2, a cubic beam splitting image combiner 3, a semiconductor crystal grain 5 and a transparent glass object stage 6 for bearing the semiconductor crystal grain, which are arranged in the direction of an optical path, wherein a top surface reflection rotating image prism 4a and a side surface reflection rotating image prism 4b are respectively arranged on the optical path between the semiconductor crystal grain and the cubic beam splitting image combiner, the side surface reflection rotating image prism and the top surface reflection rotating image prism are respectively positioned at the front side part of the semiconductor crystal grain and right above the top surface, and the cubic beam splitting image combiner 3 and the top surface reflection rotating image prism 4a are at the same horizontal height; the side reflection image-rotating prism 4b and the cubic beam splitting and image combining device 3 are positioned on the optical axis A of the telecentric imaging lens, meanwhile, a first right-angle surface 401b of the side right-angle image-rotating prism is perpendicular to the optical axis A of the telecentric imaging lens and is parallel and opposite to a first surface 301 of the cubic beam splitting and image combining device, a second right-angle surface 402b of the side right-angle image-rotating prism is parallel and opposite to the side surface of the semiconductor crystal grain, two right-angle sides of the side right-angle image-rotating prism are unequal, an inclined surface 403b is obliquely arranged with the optical axis of the telecentric imaging lens, and the inclined surface forms an optical wedge angle2(ii) a The first right-angle surface 401a of the skyhook right-angle rotating image prism is parallel to the optical axis A of the telecentric imaging lens and is parallel and opposite to the second surface 302 of the cubic beam splitter and combiner, the second right-angle surface 402a of the skyhook right-angle rotating image prism is parallel and opposite to the semiconductor crystal grain skyhook, the two right-angle sides of the skyhook right-angle rotating image prism are unequal, the inclined surface 403a is obliquely arranged with the optical axis of the telecentric imaging lens, and the inclined surface forms an optical wedge angle gamma1(ii) a And a coaxial external illumination light source 7 is arranged beside a fourth surface opposite to the second surface of the cubic beam splitting and image combining device, and the top surface and the side surface of the semiconductor crystal grain are subjected to confocal imaging on the sensor surface of the camera in a complete aplanatism way through the top surface right-angle relay prism, the side surface right-angle relay prism and the cubic beam splitting and image combining device respectively so as to obtain independent images of the two surfaces of the semiconductor crystal grain on a CMOS (complementary metal oxide semiconductor) or CCD (charge coupled device) camera.
The three angles of the top reflection rotating image prism 4a and the side reflection rotating image prism 4b are 45 degrees +0.5 α degrees, 90 degrees, 45 degrees-0.5 degrees 0.5 α degrees, wherein one embodiment is gamma1、γ2 is equal to 2.06The degree of three angles of the zenith reflection rotating image prism 4a and the side reflection rotating image prism 4b is 45.34 degrees and 90 degrees44.66 deg., and the parameters and positional relationships of the other components are shown in fig. 16.
The cubic beam splitting and image combining device is a cubic beam splitting prism formed by two identical right-angle prisms, has the functions of a beam splitter in an illumination light path and an image combining device in an imaging light path, and is cubic in shape, so the cubic beam splitting and image combining device is named as a cubic beam splitting and image combining device; the transmission and reflection ratio of the prism is 50% plated on the inclined plane of a right-angle prism: 50% of light splitting film, and the inclined planes of the two right-angle reflecting prisms are glued.
The invention has the advantages of the new detection device and the detection method:
1) the method can realize the defect detection of the simultaneous and complete aplanatic confocal imaging of two adjacent surfaces of the semiconductor crystal grain, does not need to use a large-depth-of-field telecentric imaging lens, and solves the problem that the contradiction between the aplanatic confocal imaging of the two adjacent surfaces and the spatial separation of the images of the two surfaces cannot be solved simultaneously;
2) the imaging light path of the embodiment scheme of the application uses the specially designed celestial surface and side surface reflection image transfer prism with the glass optical wedge function, the expected angular displacement gamma or space separation of double-sided imaging can be obtained, the interval of double images can be adjusted, and the interval size depends on the design of the glass optical wedge angle of the celestial surface and side surface reflection image transfer prism (90- α)1，90°+α2）；
3) The cubic beam splitter-combiner with glass wedge function used in the imaging optical path of another embodiment of the application can obtain the expected angular displacement gamma or space separation of double-sided imaging, and the interval of the double images can be adjusted, and the interval size depends on the design of the glass wedge angle of the cubic combiner facing to the imaging optical path of the skyward and the side (90- α)1，90°+α2）；
4) This application adopts ordinary beam splitting to close like ware, reflection rotating image prism and CMOS or CCD camera, need not to use the parallel flat board of extra glass or big depth of field telecentric imaging lens, more need not use expensive polarizing optical element and polarization CMOS sensor (camera), can effectively reduce detection device's cost, improves detection device's price/performance ratio.
5) The device for simultaneously imaging and detecting the adjacent double surfaces of the semiconductor crystal grains has the advantages of simple and compact structure, easy assembly and debugging and good reliability.
The device is similar to a Michelson double-beam equal-arm interferometer, the device respectively adopts two surfaces of a top surface, a side surface reflection image transfer prism or a cubic beam splitting image combiner in adjacent double-surface imaging light paths to realize image transfer and simultaneously realize the angular displacement gamma of a crystal grain double-surface imaging light path, the device obtains the space separation imaging of adjacent surfaces under the condition of meeting the complete aplanatism confocal of double-surface imaging, thereby realizing the simultaneous complete aplanatism confocal imaging detection of the adjacent double surfaces of semiconductor crystal grains.
Finally, it should be noted that the above examples are only used to illustrate the technical solutions of the present invention and not to limit the same; although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art will understand that: modifications to the specific embodiments of the invention or equivalent substitutions for parts of the technical features may be made; without departing from the spirit of the present invention, it is intended to cover all aspects of the invention as defined by the appended claims.

Claims (10)

1. A semiconductor refrigeration device crystal grain adjacent double-face complete aplanatic confocal imaging detection new device is characterized in that: the system comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitting and image combining device, a semiconductor crystal grain and a transparent glass objective table for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera, the telecentric imaging lens, the cubic beam splitting and image combining device, the semiconductor crystal grain and the transparent glass objective table are arranged in the direction of a light path; the side right-angle image-rotating prism and the cubic beam splitting and image combining device are positioned on the optical axis of the telecentric imaging lens, a first right-angle surface of the side right-angle image-rotating prism is vertical to the optical axis of the telecentric imaging lens and opposite to the first surface of the cubic beam splitting and image combining device, a second right-angle surface of the side right-angle image-rotating prism is parallel and opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side right-angle image-rotating prism and the optical axis of the telecentric imaging lens are obliquely arranged; the first right-angle surface of the top right-angle image-rotating prism is parallel to the optical axis of the telecentric imaging lens and is opposite to the second surface of the cubic beam splitting and image combining device, the second right-angle surface of the top right-angle image-rotating prism is parallel and opposite to the semiconductor crystal grain top surface, and the inclined surface of the top right-angle image-rotating prism is obliquely arranged with the optical axis of the telecentric imaging lens; the first surface and the second surface of the cubic beam splitting and image combining device respectively form a light wedge angle with the normal surface and the optical axis of the telecentric imaging lens, a coaxial external illumination light source is arranged beside the fourth surface opposite to the second surface of the cubic beam splitting and image combining device, and the top surface and the side surface of the semiconductor crystal grain are respectively imaged on the sensor surface of the camera in a confocal mode through a top surface right-angle image rotating prism, a side surface right-angle image rotating prism and the cubic beam splitting and image combining device in a complete aplanatism mode so as to obtain independent images of the two surfaces of the semiconductor crystal grain on a CMOS or CCD camera.
2. The device for confocal imaging detection of two adjacent faces of a semiconductor refrigeration device crystal grain according to claim 1, wherein the optical wedge angles of the first and second faces of the cubic beam splitter/combiner are α1And α2，α1And α2In order to form the wedge angle of the two beam splitting prisms deviating from the right angle of the cubic beam splitter-combiner, the four angles of the cubic beam splitter-combiner are 90 degrees and 90- α degrees1，90°，90°+α2；Light wedge angle α1And α2The double-sided imaging light beams respectively generate angular displacement gamma towards two sides of the optical axis of the cubic beam splitting and imaging device1And gamma2And γ1And gamma2Is determined by the refractive index n of the cubic beam splitter and the equivalent glass wedge angle α1And α2The image of the adjacent faces of the semiconductor die output from the cube beam splitter is spatially separated, wedge angle α1Resulting in an angular displacement gamma1=（n-1）xα1，γ2=（n-1）xα2And is double-sidedAngular interval of image is gamma = gamma1+γ2(ii) a The distance between the center of the cubic beam splitting image combiner and the center of the inclined plane of the side reflection image rotation prism is D/2+ D, the working distance WD of a side imaging light path is = D/2+ D/2, the cubic beam splitting image combiner and the inclined plane of the top reflection image rotation prism are on the same horizontal height, the distance between the cubic beam splitting image combiner and the inclined plane of the top reflection image rotation prism is D/2+ D, and the working distance WD of the top imaging light path is = D/2+ D/2; d is the width of the transparent glass objective table, and D is the right-angle side length of the prism.
3. The new device for detecting confocal imaging of full aplanatic simultaneous two adjacent surfaces of semiconductor refrigeration device crystal grains according to claim 1 or 2 is characterized in that the centers of the cubic beam splitter and the image combiner and the centers of the reflecting surfaces of the two right-angle rotating prisms are connected to form a square symmetrical light path structure with the side length of D/2+ D =37.5mm, D is the width of a transparent glass carrying table, D is the side length of the prism, the size of the cubic beam splitter and the image combiner is 15 x 15mm, the cubic beam splitter and the image combiner are aligned with the side edges of the right-angle rotating prisms on the top surface and the side surface, and the wedge angle α of an equivalent glass optical wedge of the splitting prism of the cubic beam splitter and the image combiner is1=α2=2 °, the four angles of the cubic beam splitter are 90 °, 88 °, 90 °, 92 °; the glass material of the cubic beam splitter-combiner is K9, and the angular displacement gamma is calculated1=γ2=（n-1）xα2=1.03 °, resulting in a double-image angular displacement γ =2.06 °, corresponding to a space = γ xL =2.21mm, a focal length f =51.5mm, WD =110 mm,
Figure DEST_PATH_IMAGE002
(i is the thickness of the grains); the size of the top reflection image transfer prism is 15 × 15mm, the size of the side reflection image transfer prism is 15 × 15mm, and the size of the cubic beam splitter/combiner is 15 × 15 mm; the working distance WD = D/2+ D/2=30mm, and the double-image angular displacement error generated by the angle manufacturing tolerance (less than or equal to 15 arc seconds) of the cubic beam splitter and the relay prism is controlled within 2 arc minutes.
4. A confocal imaging detection method for simultaneously and completely aplanatically imaging two adjacent surfaces of a crystal grain of a semiconductor refrigeration device as claimed in claim 1, wherein: the novel device for simultaneously and completely aplanatic confocal imaging detection of two adjacent surfaces of a semiconductor refrigerating device crystal grain comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitting and image combining device, a semiconductor crystal grain and a transparent glass object stage for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera, the telecentric imaging lens, the cubic beam splitting and image combining device, the semiconductor crystal grain and the transparent glass object stage are arranged in the direction of a light path; the side right-angle image-rotating prism and the cubic beam splitting and image combining device are positioned on the optical axis of the telecentric imaging lens, a first right-angle surface of the side right-angle image-rotating prism is vertical to the optical axis of the telecentric imaging lens and opposite to the first surface of the cubic beam splitting and image combining device, a second right-angle surface of the side right-angle image-rotating prism is parallel and opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side right-angle image-rotating prism and the optical axis of the telecentric imaging lens are obliquely arranged; the first right-angle surface of the top right-angle image-rotating prism is parallel to the optical axis of the telecentric imaging lens and is opposite to the second surface of the cubic beam splitting and image combining device, the second right-angle surface of the top right-angle image-rotating prism is parallel and opposite to the semiconductor crystal grain top surface, and the inclined surface of the top right-angle image-rotating prism is obliquely arranged with the optical axis of the telecentric imaging lens; the first surface and the second surface of the cubic beam splitting and image combining device respectively form a light wedge angle with an optical axis normal surface and an optical axis of the telecentric imaging lens, a coaxial external illumination light source is arranged beside a fourth surface opposite to the second surface of the cubic beam splitting and image combining device, and the top surface and the side surface of the semiconductor crystal grain are respectively imaged on a camera sensor surface in a confocal manner by a top surface right-angle image rotating prism, a side surface right-angle image rotating prism and the cubic beam splitting and image combining device in a complete aplanatism manner so as to obtain independent images of the two surfaces of the semiconductor crystal grain on a CMOS (complementary metal oxide semiconductor) or; during the detection, the detection result is obtained,
double-sided illumination light path:
the coaxial external illumination light source is divided into two illumination light beams when passing through the cubic beam splitter and combiner: one beam of light passes through the sky surface reflection image-rotating prism and illuminates the sky surface of the semiconductor crystal grain to be tested on the glass loading turntable; the other beam of illumination light illuminates the side surface of the semiconductor crystal grain to be tested after passing through the side surface reflection image-conversion prism, and the two beams of illumination light respectively illuminate two adjacent surfaces of the semiconductor crystal grain;
imaging detection light path:
two adjacent surfaces of the illuminated semiconductor crystal grain generate diffused light, an imaging light beam of the semiconductor crystal grain is inverted by the right-angle inverting prism of the sky surface and then reflected by the cubic beam splitter and combiner to reach the reference output surface, and the emergent imaging light beam generates an angular displacement gamma towards one side of the optical axis1(ii) a The imaging light beam on the side of the semiconductor crystal grain passes through the side right-angle image-rotating prism and then is transmitted by the cubic beam splitter and combiner to reach the reference output surface, and the emergent imaging light beam also generates an angular displacement gamma towards the other side of the optical axis2；
Angular displacement of adjacent faces output from cubic beam-splitting combiner gamma = gamma1+γ2The space between the adjacent surfaces of the corresponding crystal grains = gamma x L, L is the distance between the reflection image-rotating prism and the equivalent object surface, and independent images on two surfaces are respectively obtained on a CMOS or CCD camera;
the cubic beam splitting and image combining device can generate an expected angular displacement gamma while combining images1And gamma2The optical wedge device is functionally equivalent to the function of integrating an image combiner and a glass optical wedge capable of generating angular displacement of light rays.
5. A semiconductor refrigeration device crystal grain adjacent double-face complete aplanatic confocal imaging detection new device is characterized in that: the optical imaging device comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitting and image combining device, a semiconductor crystal grain and a transparent glass object stage for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera, the telecentric imaging lens, the cubic beam splitting and image combining device, the semiconductor crystal grain and the transparent glass object stage are arranged in the direction of an optical path; the side surface reflection image-rotating prism and the cubic beam splitting image combiner are positioned on the optical axis of the telecentric imaging lens, meanwhile, a first surface of the side surface reflection image-rotating prism and the normal surface of the optical axis of the telecentric imaging lens form a light wedge angle and are opposite to the first surface of the cubic beam splitting image combiner, a second surface of the side surface reflection image-rotating prism is parallel and opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side surface reflection image-rotating prism and the optical axis of the telecentric imaging lens are obliquely arranged; the first surface of the top surface reflection image rotating prism and the optical axis of the telecentric imaging lens form a light wedge angle and are opposite to the second surface of the cubic beam splitting and image combining device, the second surface of the top surface reflection image rotating prism is parallel and opposite to the semiconductor crystal grain top surface, and the inclined surface of the top surface reflection image rotating prism and the optical axis of the telecentric imaging lens are obliquely arranged; the side of the fourth surface opposite to the second surface of the cubic beam splitting and image combining device is provided with a coaxial external illumination light source, the top surface and the side surface of the semiconductor crystal grain are respectively subjected to confocal imaging on the sensor surface of the camera in a complete aplanatism through the top surface reflection and image rotation prism, the side surface reflection and image rotation prism and the cubic beam splitting and image combining device, so that independent images of the two surfaces of the semiconductor crystal grain are obtained on a CMOS or CCD camera.
6. A semiconductor refrigeration device crystal grain adjacent double-face complete aplanatic confocal imaging detection new device is characterized in that: the optical imaging device comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitting and image combining device, a semiconductor crystal grain and a transparent glass object stage for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera, the telecentric imaging lens, the cubic beam splitting and image combining device, the semiconductor crystal grain and the transparent glass object stage are arranged in the direction of an optical path; the side surface reflection image rotating prism and the cubic beam splitting and image combining device are positioned on the optical axis of the telecentric imaging lens, a second surface of the side surface reflection image rotating prism and the optical axis of the telecentric imaging lens form an optical wedge angle and are opposite to the side surface of the semiconductor crystal grain, the first surface of the side surface reflection image rotating prism is parallel and opposite to the first surface of the cubic beam splitting and image combining device, and the inclined surface of the side surface reflection image rotating prism and the optical axis of the telecentric imaging lens are obliquely arranged; the second surface of the top surface reflection image-rotating prism forms a light wedge angle with the normal surface of the optical axis of the telecentric imaging lens and is opposite to the semiconductor crystal grain top surface, the first surface of the top surface reflection image-rotating prism is parallel and opposite to the second surface of the cubic beam splitting image combiner, and the inclined surface of the top surface reflection image-rotating prism and the optical axis of the telecentric imaging lens are obliquely arranged; the side of the fourth surface opposite to the second surface of the cubic beam splitting and image combining device is provided with a coaxial external illumination light source, the top surface and the side surface of the semiconductor crystal grain are respectively subjected to confocal imaging on the sensor surface of the camera in a complete aplanatism through the top surface reflection and image rotation prism, the side surface reflection and image rotation prism and the cubic beam splitting and image combining device, so that independent images of the two surfaces of the semiconductor crystal grain are obtained on a CMOS or CCD camera.
7. The device for confocal imaging detection of both adjacent surfaces of semiconductor refrigeration device crystal grain according to claim 5 or 6, wherein the optical wedge angle between the first surface or the second surface of the top reflection image-rotating prism and the side reflection image-rotating prism is α1And α2The degree of deviation of the first surface or the second surface of the two reflection image rotation prisms from a right angle is obtained, and the three angles of the reflection image rotation prisms on the top surface are 45 degrees, 90 degrees to α degrees1，45°+α1；The three angles of the side reflection image rotation prism are 45 degrees, 90 degrees + α2、45°-α2Wedge angle α1And α2The double-sided imaging light beams respectively generate angular displacement gamma towards two sides of the optical axis of the cubic beam splitting and imaging device1And gamma2And γ1And gamma2Is determined by the refractive index n of the glass of the reflection relay prism and the equivalent glass wedge angle α1And α2The image of the adjacent faces of the semiconductor die output from the cube beam splitter is spatially separated, wedge angle α1Resulting in an angular displacement gamma1=（n-1）xα1，γ2=（n-1）xα2And the angular interval of the two-sided image is gamma = gamma1+γ2(ii) a The distance between the center of the cubic beam splitting image combiner and the center of the inclined plane of the side reflection image rotation prism is D/2+ D, the working distance WD of a side imaging light path is = D/2+ D/2, the cubic beam splitting image combiner and the inclined plane of the top reflection image rotation prism are on the same horizontal height, the distance between the cubic beam splitting image combiner and the inclined plane of the top reflection image rotation prism is D/2+ D, and the working distance WD of the top imaging light path is = D/2+ D/2; d is the width of the transparent glass objective table, and D is the right-angle side length of the prism.
8. The new device for detecting confocal imaging of full aplanatism simultaneously by two adjacent surfaces of semiconductor refrigerating device crystal grains according to claim 7 is characterized in that the centers of two reflecting surfaces of two reflecting rotating prisms are connected to form a square symmetrical light path structure with the side length of D/2+ D =37.5mm, D is the width of a transparent glass object stage, D is the side length of the prisms, the size of the cubic beam splitter is 15 x 15mm, the cubic beam splitter is aligned with the side edges of the top surface reflecting rotating prisms and the side surface reflecting rotating prisms, the wedge angle α =2 degrees of equivalent glass wedges of the top surface reflecting rotating prisms and the side surface reflecting rotating prisms is 45 degrees, 88 degrees and 47 degrees, the three angles of the side surface reflecting rotating prisms are 45 degrees, 92 degrees and 43 degrees, the glass material of the top surface reflecting rotating prisms and the side surface reflecting rotating prisms is K9, and the angular displacement gamma is calculated1=γ2=（n-1）xα2=1.03 °, resulting in a double-image angular displacement γ =2.06 °, corresponding to a space = γ xL =1.42mm, a focal length f =51.5mm, WD =110 mm,
Figure DEST_PATH_IMAGE004
(i is the thickness of the grains); the size of the top reflection image transfer prism is 15 × 15mm, the size of the side reflection image transfer prism is 15 × 15mm, and the size of the cubic beam splitter/combiner is 15 × 15 mm; the working distance WD = D/2+ D/2=30mm, and the double-image angular displacement error generated by the angle manufacturing tolerance (less than or equal to 15 arc seconds) of the cubic beam splitter and the relay prism is controlled within 2 arc minutes.
9. A confocal imaging detection method for simultaneously and completely aplanatically imaging two adjacent surfaces of a semiconductor refrigeration device crystal grain as claimed in claim 5 or 6, characterized in that: the novel device for simultaneously and completely aplanatic confocal imaging detection of two adjacent surfaces of a semiconductor refrigerating device crystal grain comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitting and image combining device, a semiconductor crystal grain and a transparent glass object stage for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera, the telecentric imaging lens, the cubic beam splitting and image combining device, the semiconductor crystal grain and the transparent glass object stage are arranged in the light path direction; the side surface reflection image-rotating prism and the cubic beam splitting image combiner are positioned on the optical axis of the telecentric imaging lens, meanwhile, a first surface of the side surface reflection image-rotating prism and the normal surface of the optical axis of the telecentric imaging lens form a light wedge angle and are opposite to the first surface of the cubic beam splitting image combiner, a second surface of the side surface reflection image-rotating prism is parallel and opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side surface reflection image-rotating prism and the optical axis of the telecentric imaging lens are obliquely arranged; the first surface of the top surface reflection image rotating prism and the optical axis of the telecentric imaging lens form a light wedge angle and are opposite to the second surface of the cubic beam splitting and image combining device, the second surface of the top surface reflection image rotating prism is parallel and opposite to the semiconductor crystal grain top surface, and the inclined surface of the top surface reflection image rotating prism and the optical axis of the telecentric imaging lens are obliquely arranged; a coaxial external illumination light source is arranged beside a fourth surface opposite to the second surface of the cubic beam splitting and image combining device, and the top surface and the side surface of the semiconductor crystal grain are subjected to confocal imaging on the sensor surface of the camera in a complete aplanatism way through the top surface reflection image rotating prism, the side surface reflection image rotating prism and the cubic beam splitting and image combining device respectively so as to obtain independent images of the two surfaces of the semiconductor crystal grain on a CMOS (complementary metal oxide semiconductor) or CCD (charge coupled device) camera; during the detection, the detection result is obtained,
double-sided illumination light path:
the coaxial external illumination light source is divided into two illumination light beams when passing through the cubic beam splitter and combiner: one beam of light passes through the sky surface reflection image-rotating prism and illuminates the sky surface of the semiconductor crystal grain to be tested on the glass loading turntable; the other beam of illumination light illuminates the side surface of the semiconductor crystal grain to be tested after passing through the side surface reflection image-conversion prism, and the two beams of illumination light respectively illuminate two adjacent surfaces of the semiconductor crystal grain;
imaging detection light path:
two adjacent surfaces of the illuminated semiconductor crystal grain generate diffused light, and an imaging light beam emitted from the top surface of the semiconductor crystal grain after being reflected by the top surface and transferred to the image prism generates an angular displacement gamma to one side of an optical axis1Then reflected by the cube beam splitter to reach the referenceOn the output face; the imaging light beam emitted from the side surface of the semiconductor crystal grain through the side surface reflection image-rotating prism also produces an angular displacement gamma towards the other side of the optical axis2Then transmitted by the cubic beam splitter to the reference output surface, and the angular displacement gamma = gamma of the adjacent surface output from the cubic beam splitter1+γ2The corresponding spacing between adjacent crystal grain surfaces = gamma x L, L is the distance between the reflection image transfer prism and the equivalent surface, and two independent images are respectively obtained on the CMOS or CCD camera, and the reflection image transfer prism can generate an expected angular displacement gamma at the same time of image transfer1And gamma2The optical wedge is functionally equivalent to a right-angle rotating image prism and is integrated with a glass optical wedge capable of generating angular displacement of light rays.
10. A semiconductor refrigeration device crystal grain adjacent double-face complete aplanatic confocal imaging detection new device is characterized in that: the system comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitting and image combining device, a semiconductor crystal grain and a transparent glass objective table for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera, the telecentric imaging lens, the cubic beam splitting and image combining device, the semiconductor crystal grain and the transparent glass objective table are arranged in the direction of a light path; the side right-angle image-rotating prism and the cubic beam splitting and image combining device are positioned on the optical axis of the telecentric imaging lens, a first right-angle surface of the side right-angle image-rotating prism is perpendicular to the optical axis of the telecentric imaging lens and is parallel and opposite to the first surface of the cubic beam splitting and image combining device, a second right-angle surface of the side right-angle image-rotating prism is parallel and opposite to the side surface of the semiconductor crystal grain, two right-angle sides of the side right-angle image-rotating prism are unequal, and an inclined surface is obliquely arranged with the optical axis of the telecentric imaging lens; the first right-angle surface of the top right-angle image-rotating prism is parallel to the optical axis of the telecentric imaging lens and is parallel and opposite to the second surface of the cubic beam splitting and image combining device, the second right-angle surface of the top right-angle image-rotating prism is parallel and opposite to the semiconductor crystal grain top surface, two right-angle sides of the top right-angle image-rotating prism are unequal, and the inclined surface is obliquely arranged with the optical axis of the telecentric imaging lens; and a coaxial external illumination light source is arranged beside a fourth surface opposite to the second surface of the cubic beam splitting and image combining device, and the top surface and the side surface of the semiconductor crystal grain are subjected to confocal imaging on the sensor surface of the camera in a complete aplanatism way through the top surface right-angle relay prism, the side surface right-angle relay prism and the cubic beam splitting and image combining device respectively so as to obtain independent images of the two surfaces of the semiconductor crystal grain on a CMOS (complementary metal oxide semiconductor) or CCD (charge coupled device) camera.
CN202010555191.3A 2020-06-17 2020-06-17 Novel device and method for simultaneously and completely aplanatic confocal imaging detection of adjacent double surfaces of semiconductor refrigerating device crystal grains Pending CN111595860A (en)

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