CN111591998A - 多晶硅制造装置 - Google Patents
多晶硅制造装置 Download PDFInfo
- Publication number
- CN111591998A CN111591998A CN201911370744.1A CN201911370744A CN111591998A CN 111591998 A CN111591998 A CN 111591998A CN 201911370744 A CN201911370744 A CN 201911370744A CN 111591998 A CN111591998 A CN 111591998A
- Authority
- CN
- China
- Prior art keywords
- insulating member
- electrode
- sealing
- bottom plate
- straight body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000007789 sealing Methods 0.000 claims abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 12
- 229920005591 polysilicon Polymers 0.000 claims abstract description 10
- 238000009413 insulation Methods 0.000 abstract description 8
- 238000001816 cooling Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J2219/0805—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
- B01J2219/0807—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes
- B01J2219/0815—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes involving stationary electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J2219/0805—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
- B01J2219/0807—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes
- B01J2219/0824—Details relating to the shape of the electrodes
- B01J2219/0826—Details relating to the shape of the electrodes essentially linear
- B01J2219/0828—Wires
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J2219/0805—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
- B01J2219/0807—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes
- B01J2219/0837—Details relating to the material of the electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0871—Heating or cooling of the reactor
Abstract
一种多晶硅制造装置,本发明提供了一种可以提高多晶硅制造装置的反应炉内的密封性及电极与底板之间的绝缘性的技术。在用于对硅芯线供给电力的电极和底板部之间设置一体式套筒结构的绝缘部件,将密封部件分别配置于绝缘部件的凸缘部的至少一部分和绝缘部件的直主体部的至少一部分。
Description
技术领域
本发明涉及一种多晶硅制造装置,特别是涉及一种反应炉内的密封性及电极与底板之间的绝缘性优异的多晶硅制造装置的结构。
本申请对2019年2月20日申请的日本特愿2009-027952号主张优先权,并将其内容全部作为参照引用于本申请。
背景技术
多晶硅是半导体用单晶硅或太阳能电池用硅的原料。作为多晶硅的制造方法,已知有西门子法。西门子法通常是通过使硅烷原料气体与加热后的硅芯线接触,使用CVD(Chemical Vapor Deposition:化学气相沉积)法使多晶硅在该硅芯线的表面析出的方法。
就西门子法而言,将硅芯线组装成垂直方向两根、水平方向一根的门型,将该门型硅芯线的两端部分别与芯线保持架连接,并固定于配置在基板上的一对金属制电极上。一般而言,成为在反应炉内配置多组门型硅芯线的结构。
通过通电将门型硅芯线加热至析出温度,使例如三氯氢硅和氢的混合气体作为原料气体与硅芯线接触,从而硅发生气相沉积,希望的直径的多晶硅棒形成为倒U字状。
将电极插入到反应炉的底板部(基板)的贯通孔内。即,希望在电极和底板部之间具有隔离炉内空间的密封性能及电极与底板之间的绝缘性能这两者。
在日本特开2010-30878公报中公开了一种多晶硅制造装置,该多晶硅制造装置是将形成为插入有电极保持架的状态的底板部的贯通孔设为下部为直线部且上部为朝向上方逐渐扩径的锥形部的结构的装置,根据该结构的多晶硅制造装置,可以保护将反应炉的底板部和电极之间电绝缘的绝缘材料免受反应时的热量,能够吸收热膨胀差,并且可以维持良好的绝缘性。但是,采用该结构需要对装置进行大幅改造,存在制造成本变高这样的问题。
另外,在日本特表2018-502031号公报中公开了一种用于将CVD反应器内的电极保持架绝缘及密封的装置,该装置在电极保持架和底板之间具备如下构成材料制的电绝缘环,该构成材料的在室温下的相对热导率为1~200W/mK、持续使用温度为400℃以上、室温下的电阻率超过109Ωcm,但根据本发明人等的研究可知,即使具有上述电绝缘环,也不能得到充分的密封性能和绝缘性能。
发明内容
【发明所要解决的问题】
本发明是鉴于这种问题而做出的,其目的在于,提供一种可以提高多晶硅制造装置的反应炉内的密封性及电极与底板之间的绝缘性而不对以往的多晶硅制造装置进行大幅改造的技术。
【用于解决问题的技术方案】
为了解决上述问题,本发明提供一种多晶硅制造装置,是基于西门子法的多晶硅的制造装置,其中,在用于对硅芯线供给电力的电极和底板部之间具备一体式套筒结构的绝缘部件,所述绝缘部件具有在直主体部的上部设置有凸缘部的形状,该绝缘部件的凸缘部的至少一部分嵌入于所述电极的凸缘部的下表面和所述底板部的上表面之间,并且所述绝缘部件的直主体部的至少一部分嵌入于所述电极的直主体部和设置于所述底板部的贯通孔部的侧面之间,在所述绝缘部件的至少两部位配置有密封部件。
在一方式中,所述密封部件分别配置于所述绝缘部件的凸缘部的至少一部分和所述绝缘部件的直主体部的至少一部分。
需要说明的是,可以为在所述绝缘部件的凸缘部的至少一部分的两个以上部位配置有所述密封部件的方式,同样,也可以为在所述绝缘部件的直主体部的至少一部分的两个以上部位配置有所述密封部件的方式。
【发明效果】
根据本发明,提供了一种可以提高多晶硅制造装置的反应炉内的密封性及电极与底板之间的绝缘性而不对以往的多晶硅制造装置进行大幅改造的技术。
附图说明
图1是用于说明本发明的多晶硅制造装置具备的一体式套筒结构的绝缘部件及密封部件的配置的一方式的剖视图。
【标号说明】
1电极
2底板
3底板冷却材料流路
4电极冷却材料供给部
5一体式绝缘性套筒
6A、6B密封部件
具体实施方式
下面,对用于实施本发明的形态的例子进行说明。
以往的多晶硅制造装置被设为在底板部具有圆柱形状的贯通孔的电极结构,但本发明人等进行了如下研究:提高反应炉内的密封性及电极与底板之间的绝缘性而不对该底板部进行大幅改造,即不对以往的多晶硅制造装置进行大幅改造。
在将电极固定于圆柱形状的贯通孔的情况下,必须设为在电极的直主体部的上部具有凸缘部的电极形状。为了抑制温度的上升,通常在电极设置有冷却材料的流路,但设置于电极上部的凸缘部的冷却与直主体部的冷却相比不充分的情况较多,其结果,该凸缘部的温度容易变得比直主体部高。
在日本特表2018-502031号公报中公开了一种装置,该装置的结构是将绝缘环嵌入于电极的凸缘部的下表面和底板部的上表面之间,通过将密封部件配置于该绝缘环而发挥密封功能和绝缘功能,但如上所述,由于电极的凸缘部的温度容易比直主体部变高,所以配置于该部分的密封部件被置于相对容易劣化的环境中。即,从长远来看可知,在仅将密封部件设置于电极的凸缘部的结构中,伴随该密封部件的劣化,难以充分地维持密封性能。
因此,本发明人等在用于对硅芯线供给电力的电极和底板部之间设置一体式套筒结构的绝缘部件,对密封部件的配置进行研究,充分保持密封性能。确认到只要能够配置于靠近直主体部的位置,则即使是凸缘部也能充分保持密封性能。
图1是用于说明本发明的多晶硅制造装置具备的一体式套筒结构的绝缘部件及密封部件的配置的一方式的剖视图,在该图中,标号1为电极,标号2为底板,标号3为底板冷却材料流路,标号4为电极冷却材料供给部,标号5为一体式绝缘性套筒,而且,标号6A及6B为密封部件。需要说明的是,在该图中,密封部件6A、6B分别配置于绝缘部件(一体式绝缘性套筒5)的凸缘部的至少一部分和绝缘部件的直主体部的至少一部分,但只要在绝缘部件的至少两部位配置密封部件即可。
即,本发明提供一种多晶硅的制造装置,是基于西门子法的多晶硅的制造装置,其中,在用于对硅芯线供给电力的电极和底板部之间具备一体式套筒结构的绝缘部件,上述绝缘部件具有在直主体部的上部设置有凸缘部的形状,该绝缘部件的凸缘部的至少一部分嵌入于上述电极的凸缘部的下表面和上述底板部的上表面之间,并且上述绝缘部件的直主体部的至少一部分嵌入于上述电极的直主体部和设置于上述底板部的贯通孔部的侧面之间,在上述绝缘部件的至少两部位配置有密封部件。
需要说明的是,如上述,可以为密封部件分别配置于绝缘部件的凸缘部的至少一部分和绝缘部件的直主体部的至少一部分的方式,或者,也可以为在绝缘部件的凸缘部的至少一部分的两个以上部位配置有密封部件的方式,还可以为在绝缘部件的直主体部的至少一部分的两个以上部位配置有密封部件的方式。
本发明中将绝缘部件设为一体式套筒结构的原因在于,如日本特表2018-502031号公报中公开的那样,在作为密封部件和绝缘护套的组合的情况下,两部件之间的密封性受损,可能不能充分保证作为整体来看时的密封性能。
需要说明的是,在将密封部件配置于绝缘部件的直主体部的至少一部分的情况下,该密封部件配置于底板部的贯通孔的部位,但该部位不会直接受到炉内的热辐射,因此,该密封部件容易较长期地维持初始密封性能。
[实施例]
以三氯氢硅为原料,通过西门子法培育倒U字型的多晶硅棒。进行直径为约120mm~160mm的成长。在反应炉内将各实施方式设定为各六根电极,并持续一年。表1中示出了各实施方式的规格和结果。
由于在比较例1的实施方式中不能将密封性能维持一年,所以在确认到不良的时刻进行密封材料的更换。此时,其他实施方式的电极保持不变,成为总计一年的结果。
在比较例2中,虽然没有向反应炉外的气体泄漏,但可确认所有部位的密封材料劣化,认为欠缺长期稳定性。
在实施例1中,虽然没有向反应炉外的气体泄漏,但可确认到凸缘部的内侧的密封部件也略微劣化。
在实施例2中,没有向反应炉外的气体泄漏,没有确认到其他密封部件的劣化。
表1
根据该结果,当然也认为通过增加密封材料的个数可实现密封性能的长期稳定性,但在成本方面上可适当地选择最适的数量。
【产业上的可利用性】
本发明提供了一种可以提高多晶硅制造装置的反应炉内的密封性及电极与底板之间的绝缘性的技术。
Claims (4)
1.一种多晶硅制造装置,是基于西门子法的多晶硅的制造装置,其中,
在用于对硅芯线供给电力的电极和底板部之间具备一体式套筒结构的绝缘部件,
所述绝缘部件具有在直主体部的上部设置有凸缘部的形状,
该绝缘部件的凸缘部的至少一部分嵌入于所述电极的凸缘部的下表面和所述底板部的上表面之间,并且所述绝缘部件的直主体部的至少一部分嵌入于所述电极的直主体部和设置于所述底板部的贯通孔部的侧面之间,
在所述绝缘部件的至少两部位配置有密封部件。
2.根据权利要求1所述的多晶硅制造装置,其中,
所述密封部件分别配置于所述绝缘部件的凸缘部的至少一部分和所述绝缘部件的直主体部的至少一部分。
3.根据权利要求1所述的多晶硅制造装置,其中,
在所述绝缘部件的凸缘部的至少一部分的两个以上部位配置有所述密封部件。
4.根据权利要求1所述的多晶硅制造装置,其中,
在所述绝缘部件的直主体部的至少一部分的两个以上部位配置有所述密封部件。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019-027952 | 2019-02-20 | ||
JP2019027952A JP7106469B2 (ja) | 2019-02-20 | 2019-02-20 | 多結晶シリコン製造装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN111591998A true CN111591998A (zh) | 2020-08-28 |
Family
ID=69157746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911370744.1A Pending CN111591998A (zh) | 2019-02-20 | 2019-12-27 | 多晶硅制造装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11326257B2 (zh) |
EP (1) | EP3712110A1 (zh) |
JP (1) | JP7106469B2 (zh) |
CN (1) | CN111591998A (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101565184A (zh) * | 2009-05-22 | 2009-10-28 | 宜昌南玻硅材料有限公司 | 一种多晶硅生产用氢化炉装置内电极密封的方法及装置 |
CN201424378Y (zh) * | 2009-06-16 | 2010-03-17 | 重庆大全新能源有限公司 | 多晶硅还原炉高压启动绝缘电极 |
CN203034093U (zh) * | 2013-01-25 | 2013-07-03 | 六九硅业有限公司 | 一种cvd反应器电极与底座的密封结构 |
CN203498097U (zh) * | 2013-09-02 | 2014-03-26 | 上海森松新能源设备有限公司 | 高纯多晶硅生产用还原炉电极 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1155759B (de) * | 1959-06-11 | 1963-10-17 | Siemens Ag | Vorrichtung zur Gewinnung reinsten kristallinen Halbleitermaterials fuer elektrotechnische Zwecke |
US7081597B2 (en) * | 2004-09-03 | 2006-07-25 | The Esab Group, Inc. | Electrode and electrode holder with threaded connection |
JP5266817B2 (ja) * | 2008-03-17 | 2013-08-21 | 三菱マテリアル株式会社 | 多結晶シリコン製造装置 |
JP5444860B2 (ja) * | 2008-06-24 | 2014-03-19 | 三菱マテリアル株式会社 | 多結晶シリコン製造装置 |
US20100122657A1 (en) * | 2008-11-14 | 2010-05-20 | Jui Hai Hsieh | Electrode, Chemical Vapor Deposition Apparatus Including the Electrode and Method of Making |
DE102011078727A1 (de) * | 2011-07-06 | 2013-01-10 | Wacker Chemie Ag | Schutzvorrichtung für Elektrodenhalterungen in CVD Reaktoren |
JP2013018675A (ja) | 2011-07-11 | 2013-01-31 | Shin-Etsu Chemical Co Ltd | 多結晶シリコン製造装置 |
KR101590607B1 (ko) * | 2013-11-20 | 2016-02-01 | 한화케미칼 주식회사 | 폴리실리콘 제조 장치 |
DE102014223415A1 (de) * | 2014-11-17 | 2016-05-19 | Wacker Chemie Ag | Vorrichtung zur Isolierung und Abdichtung von Elektrodenhalterungen in CVD Reaktoren |
DE102015220127A1 (de) * | 2015-10-15 | 2017-04-20 | Wacker Chemie Ag | Vorrichtung zur Isolierung und Abdichtung von Elektrodenhalterungen in CVD Reaktoren |
JP7029718B2 (ja) | 2017-07-31 | 2022-03-04 | 国立研究開発法人量子科学技術研究開発機構 | リン酸化タウタンパク質の測定方法 |
-
2019
- 2019-02-20 JP JP2019027952A patent/JP7106469B2/ja active Active
- 2019-12-27 CN CN201911370744.1A patent/CN111591998A/zh active Pending
-
2020
- 2020-01-10 EP EP20151206.8A patent/EP3712110A1/en active Pending
- 2020-02-19 US US16/795,039 patent/US11326257B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101565184A (zh) * | 2009-05-22 | 2009-10-28 | 宜昌南玻硅材料有限公司 | 一种多晶硅生产用氢化炉装置内电极密封的方法及装置 |
CN201424378Y (zh) * | 2009-06-16 | 2010-03-17 | 重庆大全新能源有限公司 | 多晶硅还原炉高压启动绝缘电极 |
CN203034093U (zh) * | 2013-01-25 | 2013-07-03 | 六九硅业有限公司 | 一种cvd反应器电极与底座的密封结构 |
CN203498097U (zh) * | 2013-09-02 | 2014-03-26 | 上海森松新能源设备有限公司 | 高纯多晶硅生产用还原炉电极 |
Also Published As
Publication number | Publication date |
---|---|
US11326257B2 (en) | 2022-05-10 |
JP2020132472A (ja) | 2020-08-31 |
JP7106469B2 (ja) | 2022-07-26 |
EP3712110A1 (en) | 2020-09-23 |
US20200263304A1 (en) | 2020-08-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9562289B2 (en) | Carbon electrode with slidable contact surfaces and apparatus for manufacturing polycrystalline silicon rod | |
US8696814B2 (en) | Film deposition apparatus and film deposition method | |
KR101600651B1 (ko) | Cvd 반응기에서 전극 홀더를 위한 보호 장치 | |
KR100811389B1 (ko) | 반도체 제조 장치와 히터 | |
US20190062910A1 (en) | Electrical Resistance Heater and Heater Assemblies | |
KR20120109355A (ko) | 성막 장치 및 성막 방법 | |
CN105073244A (zh) | 用于保护沉积多晶硅的反应器中的电极密封的装置 | |
US9982364B2 (en) | Process gas preheating systems and methods for double-sided multi-substrate batch processing | |
CN102856171A (zh) | 用于微波晶体再生长的低温方法和设备 | |
JP5653830B2 (ja) | 多結晶シリコン製造装置および多結晶シリコン製造方法 | |
EP3071322B1 (en) | Apparatus for manufacturing polysilicon | |
CN111591998A (zh) | 多晶硅制造装置 | |
JP3881937B2 (ja) | 半導体製造装置または加熱装置 | |
KR20170024609A (ko) | 다결정 실리콘 봉 제조용의 실리콘 심선 및 다결정 실리콘 봉의 제조 장치 | |
JP5642857B2 (ja) | 炭素電極および多結晶シリコン棒の製造装置 | |
KR101420338B1 (ko) | 씨브이디 반응장치용 절연 슬리브 및 그 절연 슬리브가 구비된 씨브이디 반응장치 | |
EP2599108B1 (en) | Substrate processing apparatuses and systems | |
KR101064176B1 (ko) | 다결정 실리콘 로드 제조용 시드 필라멘트 | |
AU2013251286B2 (en) | Carbon electrode and apparatus for manufacturing polycrystalline silicon rod | |
KR20130120161A (ko) | 폴리실리콘 제조용 화학기상증착 반응기 | |
JP2013193931A (ja) | 多結晶シリコンロッドの製造方法 | |
KR20200094569A (ko) | 폴리실리콘 증착장치 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |