CN111587403B - 硬掩模用组合物 - Google Patents

硬掩模用组合物 Download PDF

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Publication number
CN111587403B
CN111587403B CN201980007915.6A CN201980007915A CN111587403B CN 111587403 B CN111587403 B CN 111587403B CN 201980007915 A CN201980007915 A CN 201980007915A CN 111587403 B CN111587403 B CN 111587403B
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China
Prior art keywords
carbon atoms
substituted
hard mask
group
chemical formula
Prior art date
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Active
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CN201980007915.6A
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English (en)
Chinese (zh)
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CN111587403A (zh
Inventor
崔相俊
梁敦植
李殷相
崔汉永
赵庸桓
金烔永
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Dongwoo Fine Chem Co Ltd
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Dongwoo Fine Chem Co Ltd
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Application filed by Dongwoo Fine Chem Co Ltd filed Critical Dongwoo Fine Chem Co Ltd
Priority claimed from PCT/KR2019/002018 external-priority patent/WO2019164231A1/ko
Publication of CN111587403A publication Critical patent/CN111587403A/zh
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • C08G61/122Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
    • C08G61/123Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
    • C08G61/124Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one nitrogen atom in the ring
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
CN201980007915.6A 2018-02-21 2019-02-20 硬掩模用组合物 Active CN111587403B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR20180020384 2018-02-21
KR10-2018-0020384 2018-02-21
KR10-2019-0018461 2019-02-18
KR1020190018461A KR20190100862A (ko) 2018-02-21 2019-02-18 하드마스크용 조성물
PCT/KR2019/002018 WO2019164231A1 (ko) 2018-02-21 2019-02-20 하드마스크용 조성물

Publications (2)

Publication Number Publication Date
CN111587403A CN111587403A (zh) 2020-08-25
CN111587403B true CN111587403B (zh) 2023-09-19

Family

ID=67776071

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980007915.6A Active CN111587403B (zh) 2018-02-21 2019-02-20 硬掩模用组合物

Country Status (2)

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KR (1) KR20190100862A (ko)
CN (1) CN111587403B (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102252677B1 (ko) * 2020-09-21 2021-05-14 최상준 반사방지용 하드마스크 조성물

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103903962A (zh) * 2012-12-27 2014-07-02 第一毛织株式会社 硬掩模组合物和形成图案的方法以及包括该图案的半导体集成电路器件
WO2015026194A1 (ko) * 2013-08-23 2015-02-26 (주)디엔에프 신규한 중합체 및 이를 포함하는 조성물
CN104768912A (zh) * 2012-12-26 2015-07-08 第一毛织株式会社 单体、包含所述单体的硬掩膜组成物、以及使用所述硬掩膜组成物形成图案的方法
CN105280481A (zh) * 2014-07-15 2016-01-27 三星Sdi株式会社 硬掩膜组成物和使用所述硬掩膜组成物形成图案的方法
CN105646850A (zh) * 2014-11-28 2016-06-08 三星Sdi株式会社 聚合物、有机层组合物、有机层以及形成图案的方法
CN105885018A (zh) * 2015-02-17 2016-08-24 三星Sdi株式会社 聚合物、有机层组成物、有机层以及形成图案的方法
CN107340687A (zh) * 2016-04-29 2017-11-10 东友精细化工有限公司 硬掩模用组合物
CN107526253A (zh) * 2016-06-16 2017-12-29 东友精细化工有限公司 硬掩模用组合物

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5099381B2 (ja) 2007-10-01 2012-12-19 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いた半導体装置の製造方法並びにレジスト下層膜形成組成物用添加剤

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104768912A (zh) * 2012-12-26 2015-07-08 第一毛织株式会社 单体、包含所述单体的硬掩膜组成物、以及使用所述硬掩膜组成物形成图案的方法
CN103903962A (zh) * 2012-12-27 2014-07-02 第一毛织株式会社 硬掩模组合物和形成图案的方法以及包括该图案的半导体集成电路器件
WO2015026194A1 (ko) * 2013-08-23 2015-02-26 (주)디엔에프 신규한 중합체 및 이를 포함하는 조성물
CN105280481A (zh) * 2014-07-15 2016-01-27 三星Sdi株式会社 硬掩膜组成物和使用所述硬掩膜组成物形成图案的方法
CN105646850A (zh) * 2014-11-28 2016-06-08 三星Sdi株式会社 聚合物、有机层组合物、有机层以及形成图案的方法
CN105885018A (zh) * 2015-02-17 2016-08-24 三星Sdi株式会社 聚合物、有机层组成物、有机层以及形成图案的方法
CN107340687A (zh) * 2016-04-29 2017-11-10 东友精细化工有限公司 硬掩模用组合物
CN107526253A (zh) * 2016-06-16 2017-12-29 东友精细化工有限公司 硬掩模用组合物

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CN111587403A (zh) 2020-08-25
KR20190100862A (ko) 2019-08-29

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