CN111566820B - 用于垂直传输场效应晶体管的替换金属栅极工艺 - Google Patents

用于垂直传输场效应晶体管的替换金属栅极工艺 Download PDF

Info

Publication number
CN111566820B
CN111566820B CN201880085472.8A CN201880085472A CN111566820B CN 111566820 B CN111566820 B CN 111566820B CN 201880085472 A CN201880085472 A CN 201880085472A CN 111566820 B CN111566820 B CN 111566820B
Authority
CN
China
Prior art keywords
gate
layer
forming
drain
fins
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201880085472.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN111566820A (zh
Inventor
李忠贤
杨振荣
鲍如强
H.贾甘纳坦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN111566820A publication Critical patent/CN111566820A/zh
Application granted granted Critical
Publication of CN111566820B publication Critical patent/CN111566820B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H10D84/0142—Manufacturing their gate conductors the gate conductors having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/016—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0179—Manufacturing their gate conductors the gate conductors having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0195—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices the components including vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201880085472.8A 2018-01-05 2018-12-31 用于垂直传输场效应晶体管的替换金属栅极工艺 Active CN111566820B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/862,930 US10373912B2 (en) 2018-01-05 2018-01-05 Replacement metal gate processes for vertical transport field-effect transistor
US15/862,930 2018-01-05
PCT/IB2018/060735 WO2019135154A1 (en) 2018-01-05 2018-12-31 Replacement metal gate processes for vertical transport field-effect transistor

Publications (2)

Publication Number Publication Date
CN111566820A CN111566820A (zh) 2020-08-21
CN111566820B true CN111566820B (zh) 2024-02-13

Family

ID=67141082

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880085472.8A Active CN111566820B (zh) 2018-01-05 2018-12-31 用于垂直传输场效应晶体管的替换金属栅极工艺

Country Status (5)

Country Link
US (2) US10373912B2 (enExample)
EP (1) EP3711098B1 (enExample)
JP (1) JP7356982B2 (enExample)
CN (1) CN111566820B (enExample)
WO (1) WO2019135154A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10276572B2 (en) * 2015-11-05 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10529624B2 (en) * 2017-11-21 2020-01-07 International Business Machines Corporation Simple contact over gate on active area
US10559686B2 (en) * 2018-06-26 2020-02-11 Globalfoundries Inc. Methods of forming gate contact over active region for vertical FinFET, and structures formed thereby
US10483375B1 (en) * 2018-07-17 2019-11-19 International Business Machines Coporation Fin cut etch process for vertical transistor devices
US10916638B2 (en) * 2018-09-18 2021-02-09 International Business Machines Corporation Vertical fin field effect transistor devices with reduced top source/drain variability and lower resistance
US20200135585A1 (en) 2018-10-29 2020-04-30 International Business Machines Corporation Maskless top source/drain epitaxial growth on vertical transport field effect transistor
US11908911B2 (en) * 2019-05-16 2024-02-20 Intel Corporation Thin film transistors with raised source and drain contacts and process for forming such
US11322602B2 (en) 2019-10-11 2022-05-03 Samsung Electronics Co., Ltd. Vertical field-effect transistor (VFET) devices and methods of forming the same
US11164787B2 (en) 2019-12-19 2021-11-02 International Business Machines Corporation Two-stage top source drain epitaxy formation for vertical field effect transistors enabling gate last formation
KR102737495B1 (ko) 2020-01-10 2024-12-04 삼성전자주식회사 자기 정렬 컨택을 포함하는 반도체 소자 및 그 제조 방법
US11257710B2 (en) * 2020-01-10 2022-02-22 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Method of fabricating semiconductor device
US11145550B2 (en) * 2020-03-05 2021-10-12 International Business Machines Corporation Dummy fin template to form a self-aligned metal contact for output of vertical transport field effect transistor
CN113053820B (zh) * 2020-03-30 2024-12-24 台湾积体电路制造股份有限公司 半导体结构和形成集成电路结构的方法
US11476346B2 (en) 2020-06-24 2022-10-18 International Business Machines Corporation Vertical transistor having an oxygen-blocking top spacer
KR102877107B1 (ko) 2021-03-12 2025-10-28 삼성전자주식회사 반도체 소자
US12132105B2 (en) * 2021-04-02 2024-10-29 Samsung Electronics Co., Ltd. Semiconductor device and method for fabricating the same
US20230063973A1 (en) * 2021-09-01 2023-03-02 International Business Machines Corporation Fet with reduced parasitic capacitance
US11855191B2 (en) * 2021-10-06 2023-12-26 International Business Machines Corporation Vertical FET with contact to gate above active fin
US12107147B2 (en) 2021-12-15 2024-10-01 International Business Machines Corporation Self-aligned gate contact for VTFETs
US20240105841A1 (en) * 2022-09-28 2024-03-28 International Business Machines Corporation Vertical-transport field-effect transistors with high performance output

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103972067A (zh) * 2013-02-05 2014-08-06 格罗方德半导体公司 具有取代栅极结构的集成电路及其制造方法
US9048254B2 (en) * 2009-12-02 2015-06-02 United Microelectronics Corp. Semiconductor structure having a metal gate with side wall spacers
CN105261645A (zh) * 2014-07-16 2016-01-20 联华电子股份有限公司 半导体装置及其制作方法
CN105826361A (zh) * 2015-01-27 2016-08-03 国际商业机器公司 半导体器件及其制造方法
US9640636B1 (en) * 2016-06-02 2017-05-02 Globalfoundries Inc. Methods of forming replacement gate structures and bottom and top source/drain regions on a vertical transistor device
US9653465B1 (en) * 2016-09-12 2017-05-16 International Business Machines Corporation Vertical transistors having different gate lengths
US9799751B1 (en) * 2016-04-19 2017-10-24 Globalfoundries Inc. Methods of forming a gate structure on a vertical transistor device

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100401130B1 (ko) 2001-03-28 2003-10-10 한국전자통신연구원 수직형 채널을 가지는 초미세 ｍｏｓ 트랜지스터 제조방법
US6690040B2 (en) 2001-09-10 2004-02-10 Agere Systems Inc. Vertical replacement-gate junction field-effect transistor
US6773994B2 (en) 2001-12-26 2004-08-10 Agere Systems Inc. CMOS vertical replacement gate (VRG) transistors
CN100570894C (zh) 2004-01-22 2009-12-16 国际商业机器公司 垂直鳍片场效应晶体管mos器件
US20060261406A1 (en) 2005-05-18 2006-11-23 Yijian Chen Vertical integrated-gate CMOS device and its fabrication process
JP2009141110A (ja) * 2007-12-06 2009-06-25 Elpida Memory Inc 半導体装置および半導体装置の製造方法
US8274110B2 (en) 2009-05-20 2012-09-25 Micron Technology, Inc. Vertically-oriented semiconductor selection device providing high drive current in cross-point array memory
US8677575B1 (en) 2010-10-29 2014-03-25 Jenny Bergstrom Jewelry clasp
US8455932B2 (en) 2011-05-06 2013-06-04 International Business Machines Corporation Local interconnect structure self-aligned to gate structure
US8685825B2 (en) 2011-07-27 2014-04-01 Advanced Ion Beam Technology, Inc. Replacement source/drain finFET fabrication
CN103187310B (zh) 2011-12-31 2017-03-15 中芯国际集成电路制造(北京)有限公司 一种互补结型场效应晶体管c‑JFET器件及其后栅极的制造方法
CN102646599B (zh) 2012-04-09 2014-11-26 北京大学 一种大规模集成电路中FinFET的制备方法
US8865581B2 (en) 2012-10-19 2014-10-21 Tokyo Electron Limited Hybrid gate last integration scheme for multi-layer high-k gate stacks
JP5596245B1 (ja) * 2012-11-12 2014-09-24 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置の製造方法、及び、半導体装置
FR3011119B1 (fr) 2013-09-23 2017-09-29 Commissariat Energie Atomique Procede de realisation d'un transistor
EP3061124A4 (en) 2013-09-26 2017-04-26 Intel Corporation Vertical non-planar semiconductor device for system-on-chip (soc) applications
US9087897B1 (en) 2014-01-31 2015-07-21 International Business Machines Corporation Semiconductor structures with pair(s) of vertical field effect transistors, each pair having a shared source/drain region and methods of forming the structures
JP2017526157A (ja) 2014-06-23 2017-09-07 インテル・コーポレーション 縦型トランジスタアーキテクチャを形成するための技術
CN105470132B (zh) 2014-09-03 2018-08-10 中芯国际集成电路制造(上海)有限公司 鳍式场效应管的形成方法
US9899489B2 (en) 2015-02-13 2018-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical gate all around (VGAA) devices and methods of manufacturing the same
KR102292812B1 (ko) 2015-08-18 2021-08-23 삼성전자주식회사 반도체 장치
US9570356B1 (en) 2015-12-07 2017-02-14 International Business Machines Corporation Multiple gate length vertical field-effect-transistors
US9525064B1 (en) 2015-12-16 2016-12-20 International Business Machines Corporation Channel-last replacement metal-gate vertical field effect transistor
US9437503B1 (en) 2015-12-22 2016-09-06 International Business Machines Corporation Vertical FETs with variable bottom spacer recess
US9805935B2 (en) 2015-12-31 2017-10-31 International Business Machines Corporation Bottom source/drain silicidation for vertical field-effect transistor (FET)
US9935199B2 (en) 2016-01-15 2018-04-03 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET with source/drain structure
US9882047B2 (en) 2016-02-01 2018-01-30 International Business Machines Corporation Self-aligned replacement metal gate spacerless vertical field effect transistor
US9780194B1 (en) 2016-03-28 2017-10-03 International Business Machines Corporation Vertical transistor structure with reduced parasitic gate capacitance
US9722048B1 (en) 2016-03-28 2017-08-01 International Business Machines Corporation Vertical transistors with reduced bottom electrode series resistance
US11018254B2 (en) 2016-03-31 2021-05-25 International Business Machines Corporation Fabrication of vertical fin transistor with multiple threshold voltages
US9530866B1 (en) 2016-04-13 2016-12-27 Globalfoundries Inc. Methods of forming vertical transistor devices with self-aligned top source/drain conductive contacts
US9530863B1 (en) 2016-04-13 2016-12-27 Globalfoundries Inc. Methods of forming vertical transistor devices with self-aligned replacement gate structures
US9536793B1 (en) 2016-04-22 2017-01-03 Globalfoundries Inc. Self-aligned gate-first VFETs using a gate spacer recess
US9773913B1 (en) * 2016-05-06 2017-09-26 International Business Machines Corporation Vertical field effect transistor with wrap around metallic bottom contact to improve contact resistance
US10217863B2 (en) * 2016-06-28 2019-02-26 International Business Machines Corporation Fabrication of a vertical fin field effect transistor with an asymmetric gate structure
US11056391B2 (en) 2016-06-30 2021-07-06 International Business Machines Corporation Subtractive vFET process flow with replacement metal gate and metallic source/drain
US9786788B1 (en) 2016-07-07 2017-10-10 Globalfoundries Inc. Vertical-transport FinFET device with variable Fin pitch
US9780208B1 (en) 2016-07-18 2017-10-03 Globalfoundries Inc. Method and structure of forming self-aligned RMG gate for VFET
US9799647B1 (en) * 2016-08-22 2017-10-24 International Business Machines Corporation Integrated device with P-I-N diodes and vertical field effect transistors
US9773708B1 (en) 2016-08-24 2017-09-26 Globalfoundries Inc. Devices and methods of forming VFET with self-aligned replacement metal gates aligned to top spacer post top source drain EPI
US9859421B1 (en) 2016-09-21 2018-01-02 International Business Machines Corporation Vertical field effect transistor with subway etch replacement metal gate
US10014370B1 (en) * 2017-04-19 2018-07-03 Globalfoundries Inc. Air gap adjacent a bottom source/drain region of vertical transistor device
US9911738B1 (en) 2017-05-04 2018-03-06 Globalfoundries Inc. Vertical-transport field-effect transistors with a damascene gate strap
JP6368836B2 (ja) 2017-07-27 2018-08-01 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
US10453844B2 (en) 2017-12-06 2019-10-22 International Business Machines Corporation Techniques for enhancing vertical gate-all-around FET performance

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9048254B2 (en) * 2009-12-02 2015-06-02 United Microelectronics Corp. Semiconductor structure having a metal gate with side wall spacers
CN103972067A (zh) * 2013-02-05 2014-08-06 格罗方德半导体公司 具有取代栅极结构的集成电路及其制造方法
CN105261645A (zh) * 2014-07-16 2016-01-20 联华电子股份有限公司 半导体装置及其制作方法
CN105826361A (zh) * 2015-01-27 2016-08-03 国际商业机器公司 半导体器件及其制造方法
US9799751B1 (en) * 2016-04-19 2017-10-24 Globalfoundries Inc. Methods of forming a gate structure on a vertical transistor device
US9640636B1 (en) * 2016-06-02 2017-05-02 Globalfoundries Inc. Methods of forming replacement gate structures and bottom and top source/drain regions on a vertical transistor device
US9653465B1 (en) * 2016-09-12 2017-05-16 International Business Machines Corporation Vertical transistors having different gate lengths

Also Published As

Publication number Publication date
US10658299B2 (en) 2020-05-19
US20190267325A1 (en) 2019-08-29
EP3711098A1 (en) 2020-09-23
JP2021509536A (ja) 2021-03-25
JP7356982B2 (ja) 2023-10-05
US20190214343A1 (en) 2019-07-11
WO2019135154A1 (en) 2019-07-11
US10373912B2 (en) 2019-08-06
EP3711098A4 (en) 2020-12-23
EP3711098B1 (en) 2024-02-14
CN111566820A (zh) 2020-08-21

Similar Documents

Publication Publication Date Title
CN111566820B (zh) 用于垂直传输场效应晶体管的替换金属栅极工艺
JP7438237B2 (ja) 積層型縦型輸送電界効果トランジスタのためのハイブリッド・ゲート・スタック集積
US11164791B2 (en) Contact formation for stacked vertical transport field-effect transistors
US10236355B2 (en) Fabrication of a vertical fin field effect transistor with a reduced contact resistance
US9947528B2 (en) Structure and method for nFET with high k metal gate
US8058125B1 (en) Poly resistor on a semiconductor device
US11271106B2 (en) Replacement metal gate process for vertical transport field-effect transistor with self-aligned shared contacts
US8932921B2 (en) N/P metal crystal orientation for high-k metal gate Vt modulation
US11257934B2 (en) Fin field-effect transistors with enhanced strain and reduced parasitic capacitance
CN106549061A (zh) 半导体器件及其制造方法
CN103426821A (zh) 半导体集成电路制造的方法
US11145555B2 (en) Gate-last process for vertical transport field-effect transistor
US9887100B2 (en) Methods of forming semiconductor devices and structures thereof
US11257721B2 (en) Replacement metal gate process for vertical transport field-effect transistors with multiple threshold voltages
US10388570B2 (en) Substrate with a fin region comprising a stepped height structure
US20240204005A1 (en) Transistors with dielectric stack isolating backside power rail

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant