CN111564532A - Post-treatment efficiency-increasing equipment and method for HAC solar cell - Google Patents
Post-treatment efficiency-increasing equipment and method for HAC solar cell Download PDFInfo
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- 238000007669 thermal treatment Methods 0.000 claims abstract description 42
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- 238000001816 cooling Methods 0.000 claims abstract description 22
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Abstract
The invention discloses an HAC solar cell post-treatment synergy device which is a furnace body with a tunnel structure, wherein a metal chain belt is arranged in the furnace body, and the interior of the furnace body is divided into a preheating section, a photo-thermal treatment section and a cooling section along the advancing direction of a cell. The invention also discloses a post-treatment synergy method of the HAC solar cell, which comprises the steps of preheating, photo-thermal treatment and cooling in sequence, wherein a light source in the photo-thermal treatment section is formed by one or more single-color LEDs with the light-emitting wavelength of 450-700 nanometers, and the light intensity of the LEDs irradiated on the surface of a cell slice is limited to 2-50 KW/m2(ii) a Controlling the temperature of the battery piece to be 150-250 ℃ in the photo-thermal treatment process, and controlling the illumination time to be 10-600 seconds; the light source is divided into a plurality of LED modules in the advancing direction of the battery piece, and each LED module is provided with an independent control switch; in the photo-thermal treatment section, the illumination adopts pulse type irradiation. Book (I)Compared with the existing photo-thermal treatment equipment, the invention greatly reduces the light intensity, ensures that the temperature rise of the solar cell is not too high, saves the energy and can reduce the requirement of the equipment on the cooling function.
Description
Technical Field
The invention belongs to the field of solar cells and semiconductor devices, relates to material and device preparation technology and equipment, and particularly relates to post-treatment synergistic equipment and method for an HAC solar cell.
Background
Solar cells based on amorphous silicon/crystalline silicon Heterojunction Structures (HACs), including HITs, HBCs and other structures, have very high conversion efficiency, and the technology is suitable for mass production and is focused and developed by the industry. In the solar cell, an intrinsic amorphous silicon film is used as a passivation layer, and a heavily doped amorphous silicon film is used as an emitter or a back electric field layer. The amorphous silicon thin film contains a large amount of hydrogen atoms which are mainly bonded with silicon and have a complex structure including SiH1、SiH2、SiH3And the like.
In the preparation process of the solar cell, the substrate of the amorphous silicon film needs to be heated in the preparation process, and after the preparation of the amorphous silicon film is finished, the substrate is heated to about 200 ℃ in the subsequent preparation processes of the transparent conductive oxide layer and the metal grid line layer. Because each type of silicon hydrogen bond is weak, many of the silicon hydrogen bonds can change during heating, recombine or become hydrogen gas to volatilize.
After the solar cell is prepared, if appropriate treatment can be carried out, the performance of the solar cell can be further improved. However, if the improvement is made by heating alone, the increase in temperature is advantageous for forming silicon-hydrogen bonds which are more favorable for passivation, but the increase in temperature causes volatilization of hydrogen, reduces the hydrogen content in the film, and is detrimental for improving the passivation effect. Moreover, if the heat treatment temperature exceeds 250 ℃, certain damage can be caused to the metal grid line prepared by the low-temperature silver paste. Finally, the effect of modification resulting from only heat treatment is weak. At present, a continuous spectrum light source represented by a halogen lamp is adopted for heat treatment, or a white light LED light source is adopted for heat treatment, and meanwhile, the illumination and heating effects are combined, but in the current situation, if a good effect is obtained, the intensity of light needs to be increased, so that the temperature rise of the battery piece in the treatment process is overhigh, and the grid line is easily damaged. In addition, the power of the light source is very high, and generally reaches 50-80 kilowatts/square meter, and then very high requirements on light management, heat dissipation management and the like of the light source are improved, and the limit is reached under the current situation. The light management, the heat management and the like of the photo-thermal treatment furnace designed according to the principle reach the limit, and no good solution is provided at present.
We have found that the mechanism of photo-combined heat treatment is significantly different from heat treatment alone. Only photons of a specific waveband can play a good role, and photons of other wavebands can only play a heating role, even a negative effect. If the wavelength and the intensity of the light source can be limited, the method is more beneficial, the quantity of effective photons can be increased, unnecessary heating and cooling can be reduced, the temperature of the battery plate can be controlled in a proper range, a large amount of energy can be saved, and the difficulty of light and heat management of equipment, especially the difficulty of cooling the light source and cooling the battery plate, can be greatly reduced.
Disclosure of Invention
Aiming at the defects and problems in the prior art, the invention aims to provide an HAC solar cell post-treatment synergistic device.
The invention is realized by the following technical scheme:
the invention provides an HAC solar cell post-treatment synergy device which is a furnace body with a tunnel structure, wherein a metal chain belt is arranged in the furnace body and is used as a transmission device of a cell, the interior of the furnace body is divided into a preheating section, a photo-thermal treatment section and a cooling section along the advancing direction of the cell, a light source is arranged above the photo-thermal treatment section in a tunnel, and the cell is driven by the metal chain belt to move from an inlet to an outlet.
The invention also provides a post-treatment synergy method of the HAC solar cell, which utilizes the synergy equipment to carry out preheating, photo-thermal treatment and cooling in sequence;
light source for photothermal treatment sectionIs composed of one or more monochromatic LEDs with the light-emitting wavelength of 450-700 nanometers, and the light intensity of the monochromatic LEDs irradiated on the surface of the battery piece is limited to 2-50 KW/m2；
Controlling the temperature of the battery piece to be 150-250 ℃ in the photo-thermal treatment process, and controlling the illumination time to be 10-600 seconds;
the light source is divided into a plurality of LED modules in the advancing direction of the battery piece, and each LED module is provided with an independent control switch; in the photo-thermal treatment section, the illumination adopts pulse type irradiation.
Further, if the light source adopts a monochromatic LED, the LED light source is any one of yellow light, green light or red light; if the light source adopts a mixed light source, yellow light and red light are taken as the mixed light source, and the ratio of the number of photons of the light emitted by the mixed light source to the number of the photons of the light emitted by the mixed light source is between 1: 100 and 100: 1.
Further, in the photo-thermal treatment section, the intensity of illumination irradiated on the surface of the solar cell piece is 5-20 KW/m2。
Furthermore, the temperature of the battery piece is controlled to be 180-220 ℃ in the photo-thermal treatment process, and the time is 30-100 seconds.
Furthermore, in the pulse type irradiation of the photo-thermal treatment section, the time of each irradiation is 2-120 seconds, and the interval between two times of irradiation is 10-120 seconds, so that the periodic process of irradiation/non-irradiation is repeated in the advancing process of the solar cell; the pulse irradiation is realized by switching different LED modules.
Further, for the HAC solar cell of the double-sided amorphous silicon film structure, both surfaces are photo-thermally modified.
The efficiency-improving equipment realizes adjustable productivity through adjustment of the advancing speed of the metal chain belt and adjustment of illumination intensity, and the productivity is 3000-10000 sheets per hour.
The preheating section of the invention aims to raise the temperature of the battery plate to a specific temperature, which is generally consistent with or slightly lower than that of the photothermal treatment section; infrared heating or circulating hot air heating can be adopted.
The cooling section of the invention has the function of cooling the battery plate to below 70 ℃, thereby facilitating the collection of the battery plate. Air cooling is adopted.
In the design of the whole tunnel, the air flow flows from the cooling section to the preheating section; thus, energy can be fully utilized and energy consumption is reduced.
Compared with the prior art, the invention has the beneficial effects that:
(1) the invention can obviously improve the conversion efficiency of the HAC solar cell, greatly reduces the light intensity compared with the existing photo-thermal treatment equipment, ensures that the temperature rise of the solar cell is not too high, saves the energy and can reduce the requirement of the equipment on the cooling function.
(2) After the invention is implemented for synergy, the open-circuit voltage of the HAC solar cell can be obviously improved by more than 4mV, the filling factor can be improved by more than 0.2 percent (absolute value), and the conversion efficiency can be improved by more than 0.4 percent (absolute value).
(3) The invention greatly reduces the requirement of the integral heat dissipation of the module and the equipment by adjusting the LED module, most areas can adopt an air cooling mode, the equipment structure is simplified, a large amount of energy used for cooling is saved, and the design can shorten the length of the equipment and save the space.
Drawings
FIG. 1 is a schematic diagram of the apparatus of the present invention.
FIG. 2 is a side view structural diagram of embodiment 1 of the present invention
Illustration of the drawings: 1-preheating section, 2-photothermal treatment section, 3-cooling section, 4-light source and 5-metal chain belt.
Detailed Description
The invention will be further described with reference to the accompanying drawings.
Example 1
As shown in figure 1, the post-treatment synergy equipment for the HAC solar cell is a furnace body with a tunnel structure, a metal chain belt 5 is arranged in the furnace body and serves as a transmission device for cell pieces, the cell pieces are driven by the metal chain belt 5 to move from an inlet to an outlet, the interior of the furnace body is divided into a preheating section 1, a photo-thermal treatment section 2 and a cooling section 3 along the advancing direction of the cell pieces, a light source 4 formed by a plurality of groups of monochromatic red light source LED modules is arranged above the photo-thermal treatment section 2 in the tunnel, and the LED modules in each group can be independently controlled to be switched on and switched.
The light source 4 adopts a monochromatic LED with the light emitting wavelength of 610 nanometers, the monochromatic LED light source is red light, the surface of the HAC solar cell deposited with n-type amorphous silicon is irradiated with the red light, and the light intensity of the surface of the cell irradiated with the red light is limited to 2-10 KW/m2The adjustment is carried out; pulse type irradiation of the photo-thermal treatment section 2 is realized by on-off control of different LED modules, the time of each irradiation is 5-20 seconds, and the interval between two times of irradiation is 40-60 seconds, so that the periodic process of irradiation/no-irradiation is repeated in the advancing process of the solar cell, the temperature of the cell is controlled to be 190 +/-10 ℃, and the total irradiation time is 50-100 seconds;
in the specific implementation, the adjustable productivity is realized by adjusting the advancing speed of the metal chain belt 5 and the illumination intensity, and the productivity is 4000-6000 sheets per hour.
The experimental results of the conversion efficiency of the double-sided HAC solar cell before and after the photothermal treatment are shown in fig. 2, the efficiency is improved by 0.4% (absolute value) at most, the open-circuit voltage is improved by 4.7mV, and the fill factor is improved by 0.79%.
Example 2
As shown in figure 1, the post-treatment synergy equipment for the HAC solar cell is a furnace body with a tunnel structure, a metal chain belt 5 is arranged in the furnace body and serves as a transmission device for cell pieces, the cell pieces are driven by the metal chain belt 5 to move from an inlet to an outlet, the interior of the furnace body is divided into a preheating section 1, a photo-thermal treatment section 2 and a cooling section 3 along the advancing direction of the cell pieces, a light source 4 consisting of a plurality of groups of monochromatic yellow LED modules is arranged above the photo-thermal treatment section 2 in the tunnel, and the LED modules in each group can be independently controlled to be switched on and switched off.
The light source 4 adopts a yellow monochromatic LED with the luminescence wavelength of 580 nanometers, and the light intensity of the yellow monochromatic LED irradiating the surface of the battery piece is limited to 5-20 KW/m2The adjustment is carried out; pulse type irradiation of the photo-thermal treatment section 2 is realized by on-off control of different LED modules, the time of each irradiation is 2-5 seconds, and the interval between two times of irradiation is 10-20 seconds, so that the periodic process of irradiation/no-irradiation is repeated in the advancing process of the solar cell, the temperature of the solar cell is controlled to be 160 +/-10 ℃, and the total irradiation time is 10-30 seconds;
in the specific implementation, the adjustable productivity is realized by adjusting the advancing speed of the metal chain belt 5 and the illumination intensity, and the productivity is 3000-5000 pieces per hour.
Experimental results of conversion efficiency of the double-sided HAC solar cell before and after photo-thermal treatment show that the efficiency is improved by 0.3 percent (absolute value) at most, the open-circuit voltage is improved by 4.7mV, and the filling factor is improved by 0.75 percent.
Example 3
As shown in figure 1, the post-treatment synergy equipment for the HAC solar cell is a furnace body with a tunnel structure, a metal chain belt 5 is arranged in the furnace body and serves as a transmission device for cell pieces, the cell pieces are driven by the metal chain belt 5 to move from an inlet to an outlet, the interior of the furnace body is divided into a preheating section 1, a photo-thermal treatment section 2 and a cooling section 3 along the advancing direction of the cell pieces, a plurality of groups of light sources 4 consisting of monochromatic green LED modules are arranged above the photo-thermal treatment section 2 in the tunnel, and the LED modules in each group can be independently controlled to be switched on and switched off.
The light source 4 adopts a green light source monochromatic LED with the light-emitting wavelength of 500 nanometers to irradiate the surface of the HAC solar cell deposited with n-type amorphous silicon, and the light intensity of the light irradiated on the surface of the cell slice is limited to 20-50 KW/m2The adjustment is carried out; pulse type irradiation of the photo-thermal treatment section 2 is realized by on-off control of different LED modules, the time of each irradiation is 60-120 seconds, and the interval between two times of irradiation is 50-120 seconds, so that the periodic process of irradiation/non-irradiation is repeated in the advancing process of the solar cell, the temperature of the solar cell is controlled to be 240 +/-10 ℃, and the total irradiation time is 300-600 seconds;
in the specific implementation, the adjustable productivity is realized by adjusting the advancing speed of the metal chain belt 5 and the illumination intensity, and the productivity is 6000 to 10000 sheets per hour.
Experimental results of conversion efficiency of the double-sided HAC solar cell before and after photo-thermal treatment show that the efficiency is improved by 0.41 percent (absolute value) at most, the open-circuit voltage is improved by 5.0mV, and the filling factor is improved by 0.72 percent.
Example 4
As shown in figure 1, the post-treatment synergy equipment for the HAC solar cell is a furnace body with a tunnel structure, a metal chain belt 5 is arranged in the furnace body and serves as a transmission device for cell pieces, the cell pieces are driven by the metal chain belt 5 to move from an inlet to an outlet, the interior of the furnace body is divided into a preheating section 1, a photo-thermal treatment section 2 and a cooling section 3 along the advancing direction of the cell pieces, a light source 4 formed by a plurality of groups of LED modules is arranged above the photo-thermal treatment section 2 in the tunnel, and the LED modules in each group can be independently controlled to be switched on and switched off.
The light source 4 is formed by a bicolor LED which is formed by matching red light with the luminous wavelength of 610 nanometers and yellow light with the luminous wavelength of 555 nanometers, namely, the red light LED module and the yellow light LED module are alternately distributed, the photon number ratio of the light emitted by the mixed light source and the yellow light LED module is 100: 1, and the light intensity of the light source 4 irradiating the surface of the battery piece is 5-20 KW/m2Uniform 5-gear adjustability can be realized; pulse type irradiation of the photo-thermal treatment section 2 is realized by on-off control of different LED modules, the time of each irradiation is 20-30 seconds, and the interval between two times of irradiation is 20-40 seconds, so that the periodic process of irradiation/non-irradiation is repeated in the advancing process of the solar cell, the temperature of the solar cell is controlled to be 210 +/-10 ℃, and the total irradiation time is 80-100 seconds;
in the specific implementation, the adjustable productivity is realized by adjusting the advancing speed of the metal chain belt 5 and the illumination intensity, and the productivity is 8000-10000 sheets per hour.
Experimental results of conversion efficiency of the double-sided HAC solar cell before and after photo-thermal treatment show that the efficiency is improved by 0.50 percent (absolute value) at most, the open-circuit voltage is improved by 5mV, and the filling factor is improved by 0.75 percent.
Example 5
As shown in figure 1, the post-treatment synergy equipment for the HAC solar cell is a furnace body with a tunnel structure, a metal chain belt 5 is arranged in the furnace body and serves as a transmission device for cell pieces, the cell pieces are driven by the metal chain belt 5 to move from an inlet to an outlet, the interior of the furnace body is divided into a preheating section 1, a photo-thermal treatment section 2 and a cooling section 3 along the advancing direction of the cell pieces, a light source 4 formed by a plurality of groups of LED modules is arranged above the photo-thermal treatment section 2 in the tunnel, and the LED modules in each group can be independently controlled to be switched on and switched off.
The light source 4 is composed of a red light LED module and a yellow light LED module which are matched with each other, wherein the red light LED module and the yellow light LED module are alternately distributed, the ratio of the number of photons emitted by the mixed light source and the yellow light LED module is 1: 100, and the light intensity of the light source 4 irradiating the surface of the battery piece is 2 to E30KW/m2Uniform 4-gear adjustability can be realized; pulse type irradiation of the photo-thermal treatment section 2 is realized by on-off control of different LED modules, the time of each irradiation is 10-50 seconds, and the interval between two times of irradiation is 10-60 seconds, so that the periodic process of irradiation/no-irradiation is repeated in the advancing process of the solar cell, the temperature of the cell is controlled to be 220 +/-10 ℃, and the total irradiation time is 100-300 seconds;
in the specific implementation, the adjustable productivity is realized by adjusting the advancing speed of the metal chain belt 5 and the illumination intensity, and the productivity is 5000-8000 sheets per hour.
Experimental results of conversion efficiency of the double-sided HAC solar cell before and after photo-thermal treatment show that the efficiency is improved by 0.38% (absolute value) at most, the open-circuit voltage is improved by 4.5mV, and the filling factor is improved by 0.7%.
The foregoing merely represents preferred embodiments of the invention, which are described in some detail and detail, and therefore should not be construed as limiting the scope of the invention. It should be noted that, for those skilled in the art, various changes, modifications and substitutions can be made without departing from the spirit of the present invention, and these are all within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (7)
1. The utility model provides a HAC solar cell aftertreatment increase equipment which characterized in that: the equipment is a furnace body with a tunnel type structure, a metal chain belt is arranged in the furnace body and serves as a transmission device of a battery piece, the interior of the furnace body is divided into a preheating section, a photo-thermal treatment section and a cooling section along the advancing direction of the battery piece, a light source is arranged in the tunnel above the photo-thermal treatment section, and the battery piece is driven by the metal chain belt to move from an inlet to an outlet.
2. A method of performing HAC solar cell post-treatment synergy within the apparatus of claim 1; the light source of the photo-thermal treatment section is formed by one or more monochromatic LEDs with the light-emitting wavelength of 450-700 nanometers, and the light intensity of the LEDs irradiating the surface of the battery piece is limited to 2-50 KW/m2(ii) a In the photo-thermal treatment process, the temperature of the battery piece is controlled to be 150-250 ℃, and the illumination time is 10-600 seconds; the light source is divided into a plurality of LED modules in the advancing direction of the battery piece, and each LED module is provided with an independent control switch; in the photothermal treatment stage, pulsed irradiation is used for illumination.
3. The method of claim 2 for enhancing efficiency of post-treatment of a HAC solar cell, wherein: if the light source adopts a monochromatic LED, the LED light source is any one of yellow light, green light or red light; if the light source adopts a mixed light source, yellow light and red light are used as the mixed light source, and the ratio of the number of photons of the light emitted by the mixed light source to the number of the photons of the light emitted by the mixed light source is 1: 100 to 100: 1.
4. The method of claim 2 for enhancing efficiency of post-treatment of a HAC solar cell, wherein: in the photo-thermal treatment section, the intensity of illumination irradiated on the surface of the solar cell piece is 5-20 KW/m2。
5. The method of claim 2 for enhancing efficiency of post-treatment of a HAC solar cell, wherein: the temperature of the battery piece is controlled to be 180-220 ℃ in the photo-thermal treatment process, and the time is 30-100 seconds.
6. The method of claim 2 for enhancing efficiency of post-treatment of a HAC solar cell, wherein: in the pulse type irradiation of the photo-thermal treatment section, the time of each irradiation is 2-120 seconds, and the interval between two times of irradiation is 10-120 seconds, so that the periodic process of irradiation/non-irradiation is repeated in the moving process of the solar cell.
7. The method of claim 2 for enhancing efficiency of post-treatment of a HAC solar cell, wherein: for the HAC solar cell with a double-sided amorphous silicon film structure, both surfaces are subjected to photo-thermal modification.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112768564A (en) * | 2021-01-20 | 2021-05-07 | 东方日升（常州）新能源有限公司 | Light injection passivation method of Topcon battery |
| CN114122197A (en) * | 2021-11-29 | 2022-03-01 | 江苏爱康能源研究院有限公司 | Preparation process of solar heterojunction battery assembly and light injection equipment thereof |
| CN116914032A (en) * | 2023-09-11 | 2023-10-20 | 苏州莱德新能源科技有限公司 | Light injection equipment and method for microcrystalline heterojunction solar cell |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020017618A1 (en) * | 1999-01-06 | 2002-02-14 | Aron Gat | Heating device for heating semiconductor wafers in thermal processing chambers |
| CN202808935U (en) * | 2012-09-21 | 2013-03-20 | 蚌埠玻璃工业设计研究院 | Device for improving optical-induced degradation of amorphous silicon membrane |
| US20130130430A1 (en) * | 2011-05-20 | 2013-05-23 | Solexel, Inc. | Spatially selective laser annealing applications in high-efficiency solar cells |
| CN103650170A (en) * | 2011-06-27 | 2014-03-19 | 原子能与替代能源委员会 | Process for treating a heterojunction photovoltaic cell |
| CN104795469A (en) * | 2015-04-25 | 2015-07-22 | 北京金晟阳光科技有限公司 | Roller-way-type solar cell irradiation annealing furnace |
| CN105405926A (en) * | 2015-12-07 | 2016-03-16 | 新奥光伏能源有限公司 | Silicon heterojunction solar cell and annealing method and preparation method thereof |
| CN107146828A (en) * | 2017-05-12 | 2017-09-08 | 北京金晟阳光科技有限公司 | The solar cell radiation annealing stove of uniform high-efficiency annealing |
| CN109449257A (en) * | 2018-05-04 | 2019-03-08 | 中国科学院上海微系统与信息技术研究所 | Hydrogenation treatment method and silicon heterojunction solar battery preparation method after noncrystal membrane |
| CN110416357A (en) * | 2019-07-11 | 2019-11-05 | 苏州迈正科技有限公司 | A kind of hetero-junction solar cell hydrogen passivating method, hydrogen passivating device, battery, battery component and solar powered station |
| CN110518095A (en) * | 2019-08-29 | 2019-11-29 | 国家电投集团科学技术研究院有限公司 | The light processing method of silicon heterojunction solar battery |
| CN110556449A (en) * | 2018-05-30 | 2019-12-10 | 福建钜能电力有限公司 | Device and method for maintaining performance of heterojunction solar cell and module for long time |
-
2020
- 2020-04-03 CN CN202010263716.6A patent/CN111564532B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020017618A1 (en) * | 1999-01-06 | 2002-02-14 | Aron Gat | Heating device for heating semiconductor wafers in thermal processing chambers |
| US20130130430A1 (en) * | 2011-05-20 | 2013-05-23 | Solexel, Inc. | Spatially selective laser annealing applications in high-efficiency solar cells |
| CN103650170A (en) * | 2011-06-27 | 2014-03-19 | 原子能与替代能源委员会 | Process for treating a heterojunction photovoltaic cell |
| CN202808935U (en) * | 2012-09-21 | 2013-03-20 | 蚌埠玻璃工业设计研究院 | Device for improving optical-induced degradation of amorphous silicon membrane |
| CN104795469A (en) * | 2015-04-25 | 2015-07-22 | 北京金晟阳光科技有限公司 | Roller-way-type solar cell irradiation annealing furnace |
| CN105405926A (en) * | 2015-12-07 | 2016-03-16 | 新奥光伏能源有限公司 | Silicon heterojunction solar cell and annealing method and preparation method thereof |
| CN107146828A (en) * | 2017-05-12 | 2017-09-08 | 北京金晟阳光科技有限公司 | The solar cell radiation annealing stove of uniform high-efficiency annealing |
| CN109449257A (en) * | 2018-05-04 | 2019-03-08 | 中国科学院上海微系统与信息技术研究所 | Hydrogenation treatment method and silicon heterojunction solar battery preparation method after noncrystal membrane |
| CN110556449A (en) * | 2018-05-30 | 2019-12-10 | 福建钜能电力有限公司 | Device and method for maintaining performance of heterojunction solar cell and module for long time |
| CN110416357A (en) * | 2019-07-11 | 2019-11-05 | 苏州迈正科技有限公司 | A kind of hetero-junction solar cell hydrogen passivating method, hydrogen passivating device, battery, battery component and solar powered station |
| CN110518095A (en) * | 2019-08-29 | 2019-11-29 | 国家电投集团科学技术研究院有限公司 | The light processing method of silicon heterojunction solar battery |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112768564A (en) * | 2021-01-20 | 2021-05-07 | 东方日升（常州）新能源有限公司 | Light injection passivation method of Topcon battery |
| CN114122197A (en) * | 2021-11-29 | 2022-03-01 | 江苏爱康能源研究院有限公司 | Preparation process of solar heterojunction battery assembly and light injection equipment thereof |
| CN116914032A (en) * | 2023-09-11 | 2023-10-20 | 苏州莱德新能源科技有限公司 | Light injection equipment and method for microcrystalline heterojunction solar cell |
| CN116914032B (en) * | 2023-09-11 | 2023-11-24 | 苏州莱德新能源科技有限公司 | Light injection equipment and method for microcrystalline heterojunction solar cell |
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|---|---|
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