CN111554778A - 一种利用激光旋切进行晶硅太阳能电池表面制绒的方法 - Google Patents
一种利用激光旋切进行晶硅太阳能电池表面制绒的方法 Download PDFInfo
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Abstract
本发明提供了一种利用激光旋切加工进行晶硅太阳能电池表面制绒的方法,通过一系列工艺实验和测试验证,获得激光旋切工艺参数、晶硅绒面微孔结构参数、晶硅绒面反射率三者之间的控制规律,从而可以从预设的晶硅绒面反射率目标值出发,选择优化的激光旋切工艺参数数值,使得晶硅绒面反射率实测值大于等于预设目标值,并从满足预设绒面反射率的晶硅样品中找到不影响后续减反膜沉积质量的所有样品所对应的绒面微孔结构参数,最后确定这些绒面微孔结构参数所对应的激光旋切工艺参数。本发明是基于激光旋切加工的表面制绒技术,绿色安全、对环境无污染,且表面微结构单元高度可控,可大幅度降低绒面反射率,提高太阳能电池转换效率。
Description
技术领域
本发明属于太阳能电池制备领域,具体涉及一种利用激光旋切加工进行晶硅太阳能电池表面制绒的方法。
背景技术
随着以煤炭、石油为主的不可再生能源日益短缺,“雾霾”问题日益加剧,人类对清洁的可再生能源的需求愈加迫切,寻求可替代传统化石燃料的清洁能源已成为必然趋势。从1839年光电效应被发现,太阳能光伏发电已成为诸多太阳能利用方式中最重要和最具应用前景的技术之一,是20世纪材料革命和能源革命的重要内容,预计到2030年,在全球能源消耗总量中,可再生能源将占据三分之一的份额,而太阳能光伏发电在全球总电力供应中的占比也将达到10%以上,而晶硅电池目前占了太阳能市场的近90%,产额巨大。
我国作为能源消耗大国,虽然有太阳能资源丰富的有利条件,但我国光伏产业的发展面临着对外原料进口依赖性严重、生产消耗大、核心技术严重不足、效率20%以上的高端产品占有率小等诸多问题。核心技术的研发和科技成果的转化,已成为制约我国光伏产业发展和全球竞争力的瓶颈,特别是直接决定晶硅太阳能电池光电转换效率的表面织构化(制绒)技术。高质量、高效率、低成本的制备低反射率表面织构,尽可能提高对太阳光能量的吸收已成为当前晶硅太阳能电池技术升级和科技成果成功转化的主要任务。
目前工业上最成熟、最常用的硅表面制绒技术为湿式化学织构法。湿法化学制绒技术虽然成本较低,工艺较成熟,但化学反应过程较为复杂,反应的中间产物众多,同时伴有气体产生,并且所制备的微结构单元随机分布,单元大小不易控制,不能进行工艺的高度定制,因此绒面反射率一般偏高,单晶硅正金字塔绒面300~1100nm波长的反射率一般在10%以上,多晶硅多孔绒面一般在15%以上。随着激光制造技术不断发展,作为一种非接触、高精度、高效率的加工技术,激光在制备晶硅减反射表面微结构方面愈发受到人们的关注。
发明内容
本发明针对上述现有技术的不足,提供了一种利用激光旋切加工进行晶硅太阳能电池表面制绒的方法。
本发明是通过如下技术方案实现的:
一种利用激光旋切加工进行晶硅太阳能电池表面制绒的方法,包括如下步骤:
步骤1、准备样品,将硅片按照RCA标准清洗法进行清洗;
步骤2、通过一系列工艺实验,获得激光旋切工艺参数对晶硅绒面微孔结构参数的控制关系,即任意一个激光旋切工艺参数对每一个晶硅绒面微孔结构参数的变化曲线;
步骤3、通过扫描电子显微镜、原子力显微镜和聚焦离子束、分光光度计的检测,获得晶硅绒面微孔结构参数对晶硅绒面反射率的控制规律,即任意一个晶硅绒面微孔结构参数对其晶硅绒面反射率的变化曲线;
步骤4、预设一个晶硅绒面反射率目标值R0;
步骤5、通过第3步获得的变化曲线,找到能够实现目标值R0的晶硅绒面微孔结构参数预设目标数值组合;
步骤6、通过第2步获得的变化曲线,找到能够实现第5步晶硅绒面微孔结构参数预设目标数值组合的激光旋切工艺参数数值组合;
步骤7、根据第6步中确定的激光旋切工艺参数数值组合,完成所有实验,并测试所有样品的绒面反射率Ri,获得满足晶硅绒面反射率目标值Ri≤R0的样品;
步骤8、在第7步满足晶硅绒面反射率目标值的样品表面,按相同制备工艺沉积氮化硅减反膜;
步骤9、通过分光光度计测量第8步中所有覆盖有减反膜的绒面反射率,找到其中最低的反射率样品,获得其对应的激光旋切工艺参数数值组合;
步骤10、采用第9步获得的工艺参数数值组合,批量制备不影响氮化硅薄膜减反效果的低反射率晶硅绒面产品。
本发明具有如下有益效果:
1、本发明能够利用超快激光旋切加工技术在晶硅表面制备高质量减反射微结构,相比现有技术中的其它激光制绒手段,可通过对旋切角度、离焦量、旋切速度、旋切圈数等关键参数的调节,制备各种类型的微孔阵列(正锥、圆柱、倒锥等)。结合有限差分时域法(FDTD)建立晶硅表面微单元模型,模拟计算制绒微结构对光吸收的效应,可研究制绒结构对反射率的影响机理,并对工艺参数和制绒结构的调整和优化提供理论指导。
2、本发明所述方法对晶硅类型、型号、形状没有限制,如单晶硅和多晶硅均可兼容。
3、本发明所述方法不受太阳能电池晶硅尺寸限制,对大尺寸晶硅样品同样适用,为大尺寸一体化太阳能电池的制备提供了理论指导和可行性实验方案。
4、相比目前工业上常用的为湿式化学织构法,基于激光旋切加工的表面制绒技术,绿色安全、对环境无污染,且表面微结构单元高度可控,可大幅度降低绒面反射率,提高太阳能电池转换效率。
5、本发明所述的利用激光旋切加工进行晶硅太阳能电池表面制绒的方法,实现简单、可靠,适用性广泛。
具体实施方式
下面结合具体实施方式对本发明做进一步详细的说明。
本发明提供了一种利用激光旋切加工进行晶硅太阳能电池表面制绒的方法,本专利本质上是通过一系列工艺实验和测试验证(反复优化),获得激光旋切工艺参数、晶硅绒面微孔结构参数、晶硅绒面反射率三者之间的控制规律(激光旋切工艺参数决定晶硅绒面微孔结构参数,晶硅绒面微孔结构参数决定晶硅绒面反射率,进而可以通过激光旋切工艺参数决定晶硅绒面反射率),从而可以从预设的晶硅绒面反射率目标值出发,选择优化的激光旋切工艺参数数值以获得对应的晶硅绒面微孔结构参数,使得晶硅绒面反射率实测值大于等于预设目标值,并从满足预设绒面反射率的晶硅样品中找到不影响后续减反膜沉积质量的所有样品所对应的绒面微孔结构参数,最后确定这些绒面微孔结构参数所对应的激光旋切工艺参数。
所述激光旋切工艺参数是指采用激光旋切法加工硅片时所采用的工艺参数,其包括以旋切路径、旋切角度、离焦量、旋切速度、旋切圈数为主的旋切参数和以激光能流密度、重复频率、光斑直径和扫描间距为主的激光参数两部分。
所述晶硅绒面微孔结构参数是指在硅片表面加工出的微孔的结构参数,其包括微孔类型(正锥、圆柱、倒锥)、最大孔径值、深宽比、孔间距、圆锥角。
所述晶硅绒面反射率是指采用分光光度计测量硅片的制绒面反射率值。
具体的讲,本发明包括如下步骤:
1、准备样品,将硅片(单晶硅或多晶硅)按照RCA标准清洗法进行清洗,以去除硅片表面的氧化膜、有机物等分子型杂质、钠离子等离子型杂质和金等重金属原子型杂质。
2、通过一系列工艺实验,获得激光旋切工艺参数对晶硅绒面微孔结构参数的控制关系,即任意一个激光旋切工艺参数对每一个晶硅绒面微孔结构参数的变化曲线。
具体实验方法可以采用:首先,通过改变旋切路径、旋切角度、离焦量、旋切速度和旋切圈数等旋切参数,在硅片表面加工出形状为正锥、圆柱和倒锥三种类型的微孔,并要求三种微孔的最大孔径均为Dmax(Dmax为预先设定的最大孔径值,其范围为100μm~1000μm,间隔为100μm);然后,通过固定其它旋切参数,通过只改变一个参数的方式,获得每个旋切参数分别对每种类型微孔结构参数(Dmax、深宽比、圆锥角)的变化曲线;最后,固定微孔类型,通过改变激光能流密度、重复频率、光斑直径、扫描间距等激光参数中的某一个参数而固定其它的参数的方式,获得每一个激光参数对晶硅绒面微孔结构参数的变化曲线(Dmax、深宽比、孔间距、圆锥角)。其中,晶硅绒面微孔结构参数均由光学显微镜(OM)、扫描电子显微镜(SEM)、原子力显微镜(AFM)和聚焦离子束(FIB)等检测设备测试获得。
3、通过扫描电子显微镜(SEM)、原子力显微镜(AFM)和聚焦离子束(FIB)、分光光度计等的检测,获得晶硅绒面微孔结构参数(Dmax、深宽比、孔间距、圆锥角)对晶硅绒面反射率的控制规律,即任意一个晶硅绒面微孔结构参数对其晶硅绒面反射率的变化曲线。
还可以采用有限差分时域法(FDTD)建立各制绒面对应的几何模型,定义材料为单晶硅或多晶硅,设置光源为350nm~1050nm波长范围内的平面光源,添加场监视器、反射率监视器和透射率监视器,运行软件并得到制绒面的电场分布和反射率、透射率曲线,与各制绒面反射率分光光度计测量结果进行比较,验证FDTD方法的置信度。
4、预设一个晶硅绒面反射率目标值R0。
5、通过第3步获得的变化曲线,找到可以实现目标值R0的晶硅绒面微孔结构参数预设目标数值组合(可能不止一组,是多组)。
6、通过第2步获得的变化曲线,找到可以实现第5步晶硅绒面微孔结构参数预设目标数值组合的激光旋切工艺参数数值组合(可能不止一组,是多组)。
7、根据第6步中确定的激光旋切工艺参数数值组合,完成所有实验,并测试所有样品的绒面反射率Ri,获得满足晶硅绒面反射率目标值(Ri≤R0)的样品。
8、在第7步满足晶硅绒面反射率目标值的样品表面,按相同制备工艺沉积氮化硅(SiNxHy)减反膜。
9、通过分光光度计测量第8步中所有覆盖有减反膜的绒面反射率,找到其中最低的反射率样品,获得其对应的激光旋切工艺参数数值组合。
10、采用第9步获得的工艺参数数值组合,批量制备不影响氮化硅薄膜减反效果的低反射率晶硅绒面产品。
Claims (1)
1.一种利用激光旋切进行晶硅太阳能电池表面制绒的方法,其特征在于,包括如下步骤:
步骤1、准备样品,将硅片按照RCA标准清洗法进行清洗;
步骤2、通过一系列工艺实验,获得激光旋切工艺参数对晶硅绒面微孔结构参数的控制关系,即任意一个激光旋切工艺参数对每一个晶硅绒面微孔结构参数的变化曲线;
步骤3、通过扫描电子显微镜、原子力显微镜和聚焦离子束、分光光度计的检测,获得晶硅绒面微孔结构参数对晶硅绒面反射率的控制规律,即任意一个晶硅绒面微孔结构参数对其晶硅绒面反射率的变化曲线;
步骤4、预设一个晶硅绒面反射率目标值R0;
步骤5、通过第3步获得的变化曲线,找到能够实现目标值R0的晶硅绒面微孔结构参数预设目标数值组合;
步骤6、通过第2步获得的变化曲线,找到能够实现第5步晶硅绒面微孔结构参数预设目标数值组合的激光旋切工艺参数数值组合;
步骤7、根据第6步中确定的激光旋切工艺参数数值组合,完成所有实验,并测试所有样品的绒面反射率Ri,获得满足晶硅绒面反射率目标值Ri≤R0的样品;
步骤8、在第7步满足晶硅绒面反射率目标值的样品表面,按相同制备工艺沉积氮化硅减反膜;
步骤9、通过分光光度计测量第8步中所有覆盖有减反膜的绒面反射率,找到其中最低的反射率样品,获得其对应的激光旋切工艺参数数值组合;
步骤10、采用第9步获得的工艺参数数值组合,批量制备不影响氮化硅薄膜减反效果的低反射率晶硅绒面产品。
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