CN111540796A - 高附着力的太阳能电池背电极和吸收层结构及制作工艺 - Google Patents

高附着力的太阳能电池背电极和吸收层结构及制作工艺 Download PDF

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CN111540796A
CN111540796A CN202010411070.1A CN202010411070A CN111540796A CN 111540796 A CN111540796 A CN 111540796A CN 202010411070 A CN202010411070 A CN 202010411070A CN 111540796 A CN111540796 A CN 111540796A
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胡盛明
隆通
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Abstract

本发明涉及太阳能电池技术领域，尤其涉及高附着力的太阳能电池背电极和吸收层结构及制作工艺，其包括吸收层和背电极，所述背电极包括银基层和蜂窝板体，蜂窝板体包括铝质层和钼质层，沿着光的导入方向，铝质层、钼质层和银基层依次设置；蜂窝板体设置有多个阵列布置的正六边吸附孔，正六边吸附孔的横截面呈正六边形状，正六边吸附孔贯穿钼质层和铝质层；吸收层包括CIGS薄膜层和CIGS填充体，CIGS薄膜层、CIGS填充体分别是通过物理气象沉积法形成于钼质层的上方、正六边吸附孔内形成。本发明的高附着力的太阳能电池背电极和吸收层结构及制作工艺，其背电极和吸收层有较高的附着力，便于提高电池的光电转换效率。

Description

高附着力的太阳能电池背电极和吸收层结构及制作工艺
技术领域
本发明涉及太阳能电池技术领域，尤其涉及高附着力的太阳能电池背电极和吸收层结构及制作工艺。
背景技术
铜铟镓硒（CIGS）系列太阳能电池是光电转换效率最高的薄膜太阳能电池，具有弱光效应好、成本低、寿命长、稳定性好、抗辐射能力强、抗热斑效应好等优点，可制成柔性光伏建材。目前，铜铟镓硒（CIGS）吸收层的制备，主要是在背电极钼（Mo）上直接制备，但是由于吸收层和背电极钼之间的附着力差，经常有脱层或者空包现象，导致电池的效率提高严重受到影响。
因此有必要提供高附着力的太阳能电池背电极和吸收层结构及制作工艺。
发明内容
本发明的目的在于针对现有技术的不足提供高附着力的太阳能电池背电极和吸收层结构及制作工艺，背电极和吸收层有较高的附着力，便于提高电池的光电转换效率。
为实现上述目的，本发明的高附着力的太阳能电池背电极和吸收层结构，包括吸收层和背电极，所述背电极包括银基层和蜂窝板体，蜂窝板体包括铝质层和钼质层，沿着光的导入方向，铝质层、钼质层和银基层依次设置；蜂窝板体设置有多个阵列布置的正六边吸附孔，正六边吸附孔的横截面呈正六边形状，正六边吸附孔贯穿钼质层和铝质层；吸收层包括CIGS薄膜层和CIGS填充体，CIGS薄膜层、CIGS填充体分别是通过物理气象沉积法形成于钼质层的上方、正六边吸附孔内形成。
进一步的，所述蜂窝板体的厚度为吸附孔的横截面的边长0.8~1.2倍，钼质层的厚度与铝质层的厚度的比值为13:42。
进一步的，所述正六边吸附孔包括钼层孔段和铝层孔段，钼层孔段横截面的边和铝层孔段的横截面的边之间的夹角为8°~10°。
为实现上述目的，本发明的高附着力的太阳能电池背电极和吸收层制作工艺，包括以下步骤：
A．制作银基层：将银浆刷镀于玻璃载板形成银基层；
B．制作钼质转移层：在转移膜电镀正六边形的防镀体，将钼靶材通过溅射镀膜的方法沉积于转移膜，将防镀体从转移膜去除后形成钼质转移层；
C．将步骤B制得的钼质转移层转移至步骤A制得的银基层，去除转移膜后形成钼质层；
D．制作铝质转移层：在转移膜电镀正六边形的防镀体，将铝靶材通过溅射镀膜的方法沉积于转移膜，将防镀体从转移膜去除后形成铝质转移层；
E．将步骤D制得的铝质转移层转移至步骤C制得的钼质层，控制钼层孔段横截面的边和铝层孔段的横截面的边之间的夹角为8°~10°，去除转移膜后形成铝质层；
F．在步骤E制得的铝质层上方沉积CIGS形成吸收层。
本发明的有益效果：本发明的高附着力的太阳能电池背电极和吸收层结构，铝质层和银基层导有良好的欧姆接触，电阻低，钼质层有较高的导电率和合适的结晶取向，通过设置正六边吸附孔使得CIGS薄膜层通过CIGS填充体与铝质层、钼质层和银基层导电接触，提高了背电极和吸收层的附着力，提升了电池的光电转换效率及组件的可靠性。本发明的本发明的高附着力的太阳能电池背电极和吸收层制作工艺制得的背电极1和吸收层2结构，背电极和吸收层间具有较高的附着力，提高了电池的光电转换效率及组件的可靠性。
附图说明
图1为本发明的高附着力的太阳能电池背电极和吸收层结构的横向结构示意图。
图2为本发明的高附着力的太阳能电池背电极和吸收层结构的俯视结构示意图。
附图标记包括：
1—背电极 11—铝质层 12—钼质层 13—银基层
14—正六边吸附孔
2—吸收层 21—CIGS薄膜层 22—CIGS填充体
a—钼层孔段横截面的边和铝层孔段的横截面的边之间的夹角。
具体实施方式
以下结合附图对本发明进行详细的描述。
如图1、图2所示，本发明的高附着力的太阳能电池背电极1和吸收层2结构，包括吸收层2和背电极1，所述背电极1包括银基层13和蜂窝板体，蜂窝板体包括铝质层11和钼质层12，沿着光的导入方向，铝质层11、钼质层12和银基层13依次设置；蜂窝板体设置有多个阵列布置的正六边吸附孔14，正六边吸附孔14的横截面呈正六边形状，正六边吸附孔14贯穿钼质层12和铝质层11；吸收层2包括CIGS薄膜层21和CIGS填充体22，CIGS薄膜层21、CIGS填充体22分别是通过物理气象沉积法形成于钼质层12的上方、正六边吸附孔14内形成。本发明的高附着力的太阳能电池背电极1和吸收层2结构，铝质层11和银基层13导有良好的欧姆接触，电阻低，钼质层12有较高的导电率和合适的结晶取向，通过设置正六边吸附孔14使得CIGS薄膜层21通过CIGS填充体22与铝质层11、钼质层12和银基层13导电接触，提高了背电极1和吸收层2的附着力，提升了电池的光电转换效率及组件的可靠性。
具体的，所述蜂窝板体的厚度为吸附孔的横截面的边长0.8~1.2倍，钼质层12的厚度与铝质层11的厚度的比值为13:42。本发明的高附着力的太阳能电池背电极1和吸收层2结构，进一步提高了背电极1和吸收层2的附着力、电池的光电转换效率及组件的可靠性。
具体的，所述正六边吸附孔14包括钼层孔段和铝层孔段，钼层孔段横截面的边和铝层孔段的横截面的边之间的夹角a为8°~10°。本发明的高附着力的太阳能电池背电极1和吸收层2结构，进一步提高了背电极1和吸收层2的附着力、电池的光电转换效率及组件的可靠性。
本发明的高附着力的太阳能电池背电极1和吸收层2制作工艺，包括以下步骤：
A．制作银基层13：将银浆刷镀于玻璃载板形成银基层13；
B．制作钼质转移层：在转移膜电镀正六边形的防镀体，将钼靶材通过溅射镀膜的方法沉积于转移膜，将防镀体从转移膜去除后形成钼质转移层；
C．将步骤B制得的钼质转移层转移至步骤A制得的银基层13，去除转移膜后形成钼质层12；
D．制作铝质转移层：在转移膜电镀正六边形的防镀体，将铝靶材通过溅射镀膜的方法沉积于转移膜，将防镀体从转移膜去除后形成铝质转移层；
E．将步骤D制得的铝质转移层转移至步骤C制得的钼质层12，控制钼层孔段横截面的边和铝层孔段的横截面的边之间的夹角为8°~10°，去除转移膜后形成铝质层11；
F．在步骤E制得的铝质层11上方沉积CIGS形成吸收层2。
本发明的本发明的高附着力的太阳能电池背电极1和吸收层2制作工艺制得的背电极1和吸收层2结构，背电极1和吸收层2间具有较高的附着力，提高了电池的光电转换效率及组件的可靠性。
综上所述可知本发明乃具有以上所述的优良特性，得以令其在使用上，增进以往技术中所未有的效能而具有实用性，成为一极具实用价值的产品。
以上内容仅为本发明的较佳实施例，对于本领域的普通技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，本说明书内容不应理解为对本发明的限制。

Claims (4)

1.高附着力的太阳能电池背电极和吸收层结构，包括吸收层和背电极，其特征在于：所述背电极包括银基层和蜂窝板体，蜂窝板体包括铝质层和钼质层；沿着光的导入方向，铝质层、钼质层和银基层依次设置；蜂窝板体设置有多个阵列布置的正六边吸附孔，正六边吸附孔的横截面呈正六边形状，正六边吸附孔贯穿钼质层和铝质层；
吸收层包括CIGS薄膜层和CIGS填充体，CIGS薄膜层、CIGS填充体分别是通过物理气象沉积法形成于钼质层的上方、正六边吸附孔内形成。
2.根据权利要求1所述的高附着力的太阳能电池背电极和吸收层结构，其特征在于：所述蜂窝板体的厚度为吸附孔的横截面的边长0.8~1.2倍，钼质层的厚度与铝质层的厚度的比值为13:42。
3.根据权利要求1所述的高附着力的太阳能电池背电极和吸收层结构，其特征在于：所述正六边吸附孔包括钼层孔段和铝层孔段，钼层孔段横截面的边和铝层孔段的横截面的边之间的夹角为8°~10°。
4.高附着力的太阳能电池背电极和吸收层制作工艺，其特征在于，包括以下步骤：
A．制作银基层：将银浆刷镀于玻璃载板形成银基层；
B．制作钼质转移层：在转移膜电镀正六边形的防镀体，将钼靶材通过溅射镀膜的方法沉积于转移膜，将防镀体从转移膜去除后形成钼质转移层；
C．将步骤B制得的钼质转移层转移至步骤A制得的银基层，去除转移膜后形成钼质层；
D．制作铝质转移层：在转移膜电镀正六边形的防镀体，将铝靶材通过溅射镀膜的方法沉积于转移膜，将防镀体从转移膜去除后形成铝质转移层；
E．将步骤D制得的铝质转移层转移至步骤C制得的钼质层，控制钼层孔段横截面的边和铝层孔段的横截面的边之间的夹角为8°~10°，去除转移膜后形成铝质层；
F．在步骤E制得的铝质层上方沉积CIGS形成吸收层。
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