CN111517764A - 一种氧化物陶瓷复合材料选择性金属化的方法 - Google Patents

一种氧化物陶瓷复合材料选择性金属化的方法 Download PDF

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CN111517764A
CN111517764A CN201910529865.XA CN201910529865A CN111517764A CN 111517764 A CN111517764 A CN 111517764A CN 201910529865 A CN201910529865 A CN 201910529865A CN 111517764 A CN111517764 A CN 111517764A
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贝国平
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Abstract

本发明涉及一种利用激光表面处理技术在氧化物陶瓷复合材料表面选择性金属化的技术。具体方案如下:1)含活性因子的氧化物陶瓷复合材料的制备;2)根据线路图纸,利用激光将氧化物陶瓷表面活化和烧蚀线路。3)将烧蚀完的样品进行清洗,置入化学液体里进行金属化处理,沉积金属线路;4)清洗样品干燥处理。本发明与传统金属化工艺相比,具有方法更简单、制备更快速、工艺更可控、精度高、结合力强、更为环保等优点。根据涂覆金属的特性,可具有导热、导电、导磁等性能,在大规模集成电路、电磁屏蔽、多功能芯片等领域具有非常高的应用价值。

Description

一种氧化物陶瓷复合材料选择性金属化的方法
技术领域
一种利用激光表面处理技术在氧化物陶瓷复合材料表面选择性金属化的方法。
背景技术
随着电子技术和半导体的发展,芯片集成度不断提高,电路布线宽度细密化,单位面积上功率耗散越来越大,必然造成发热量的增加,容易引起器件的失效。因此,近年来陶瓷PCB基板电路印刷技术越来越受到关注。陶瓷PCB电路基板是指在一定的条件下,将具有功能作用的金属材料直接键合到陶瓷基片表面(单面或双面)上的特殊工艺板。所制成的超薄复合基板具有优良的电绝缘性能,高导热特性,优异的软钎焊性和高的附着强度,并可像传统FR-4PCB板一样能刻蚀出各种图形,具有很大的载流能力。因此,陶瓷PCB基板已成为大功率电力电子电路结构技术和互连技术的基础材料。具有电阻高、高频特性突出、具有高热导率、化学稳定性佳抗震、耐热、耐压、内部电路、MARK点等比一般电路基板好、在印刷、贴片、焊接时比较精确等优点,是下一代高性能大规模集成电路和5G通信的发射器、汽车通信模块、下一代手机天线、高性能PC服务器等方向。但是制约其应用的关键因素是氧化物陶瓷材料与金属材料的浸润性较差,界面结合力不强。因此如何在不改变材料性能的情况下,改善陶瓷材料和金属涂覆层的结合力,是陶瓷PCB基板在大规模集成电路中应用的关键因素。
受在塑料PCB激光活化处理技术直接成型技术的启发,本专利主要通过激光技术在陶瓷材料进行表面处理,直接将激光光束投射在陶瓷材料表面进行布线,被照射部分可进行化学镀沉积金属。此外,为了改善金属和陶瓷的结合力,可将现有氧化物陶瓷基板中如氧化铝,氧化锆等陶瓷基板中添加活化因子,进行一体化处理。本方法可避免现有直接镀铜法(DPC),如专利CN101460014中描述,中穿孔-溅射-贴膜-显影-镀铜-剥离膜-镀镍等复杂工艺,良品率不高的问题。也可避免利用强酸表面粗化处理等工序(CN1639085和CN1740382)。同时,由于在初始材料中添加了活化因子,陶瓷基板和涂覆金属的结合力更加强。因此本专利具有设备和工艺简单,陶瓷与金属结合力强,工艺更可控、精度高、结合力强、更为环保等优点
发明内容
本发明提供一种利用激光表面处理技术在氧化物陶瓷复合材料表面选择性金属化的方法,其主要特征在于,所述方法包括以下步骤:
含活化因子的氧化物陶瓷复合材料的制备;
根据线路图纸,利用激光将氧化物陶瓷表面活化和烧蚀线路;
将烧蚀完的样品进行清洗,置入化学液体里进行金属化处理,沉积金属线路;
清洗样品干燥处理。
本发明的制备方法如图1所示。
优选地,氧化物陶瓷复合材料中的氧化物陶瓷为氧化铝、氧化硅、氧化锆、氧化钛等金属氧化铝。
优选地,活化因子为需要涂覆金属相关的氧化物材料,优选为氧化铜(CuO或者Cu2O)氧化(NiO)等材料。活化因子也可能为氧化铬、氧化银、氧化锡、氧化锌、氧化钛等材料,添加的含量质量分数为1-8%。
优选地,含活化因子的氧化物陶瓷复合材料的制备技术有无压烧结、热压烧结、等离子快速烧结等烧结技术。优选地,烧结温度在1000-1700℃,保温时间为0.5-8h.
优选地,激光表面处理主要采用单脉冲激光,具体的处理产生如下:激光波长在800-1400nm,激光的功率在2-18W,速度:0.4-2.4m/s,频率:60-240kHz,能量密度:0.6-20j/cm2
优选地,将表面活化完的陶瓷复合材料基板浸入商用或者自制的化学试剂中进行镀金属处理,如铜、银、铂、镍等金属层,化学镀的温度控制在20-80℃,时间控制在15-40分钟。
优选地,将金属化后的基体放入去离子水或者酒精清洗,然后烘干处理。
本发明具有下列优点:
1.方法更简单、制备更快速工艺更可控;
2.精度高、结合力强、更为环保等优点;
3.根据涂覆金属的特性,可具有导热、导电、导磁等性能;
4.在大规模集成电路、电磁屏蔽、多功能芯片等领域具有非常高的应用价值
实施例1
Al2O3-Cu2O复合材料覆铜金属化:将Al2O3和Cu2O按质量比96:4配料,以玛瑙球研磨介质进行干混2小时,得到混合均匀的粉体,然后粉体放入为50mm×50mm的钢磨具中进行冷压,压力为50MPa,然后坯体至于真空炉中烧结,以5℃/min的升温速率将炉温升至1630℃,保温时间为4小时,得到Al2O3-Cu2O复合材料,然后利用激光进行表面处理和布线,激光能量密度:0.6-20j/cm2,然后用标准镀铜液(贻顺牌Q/YS.118)进行沉铜处理。沉铜的厚度和激光能量密度的关系如图2所示。
实施例2
3YSZ-CuO复合材料覆铜金属化:将ZrO2-3%Y2O3(3YSZ)和CuO按质量比98:2配料,以玛瑙球和无水酒精为研磨介质,在球磨机混料2小时后烘干处理后得到均匀混合的粉体材料,然后粉体放入为50mm×50mm的钢磨具中进行冷压,压力为100MPa,然后坯体至于真空炉中烧结,以5℃/min的升温速率将炉温升至1430℃,保温时间为2小时,得到3YSZ-CuO复合材料,剩余步骤跟实施例1相同,用激光进行表面处理和布线的表面如图3所示。
实施例3
Al2O3-NiO复合材料覆镍金属化:将Al2O3和NiO按质量比95:5配料,以玛瑙球研磨介质进行干混1小时,得到混合均匀的粉体,然后粉体放入为50mm×50mm的钢磨具中进行冷压,压力为80MPa,然后坯体至于真空炉中烧结,以5℃/min的升温速率将炉温升至1650℃,保温时间为4小时,得到Al2O3-NiO复合材料,然后利用激光进行表面处理和布线,然后用标准沉镍液(贻顺牌Q/YS.602)进行沉镍处理。
附图说明
图1:在氧化物陶瓷材料里添加活化因子后,激光表面处理和布线后金属化的示意图。
图2:Al2O3-Cu2O复合材料覆铜金属化后,沉铜的厚度和激光能量密度的关系。
图3:3YSZ-CuO复合材料激光处理活化后的3D形貌。

Claims (7)

1.一种利用激光表面处理技术在氧化物陶瓷复合材料表面选择性金属化的方法,其主要特征在于,所述方法包括以下步骤:
含活化因子的氧化物陶瓷复合材料的制备;
根据线路图纸,利用激光将氧化物陶瓷表面活化和烧蚀线路;
将烧蚀完的样品进行清洗,置入化学液体里进行金属化处理,沉积金属线路;
清洗样品干燥处理。
2.根据权利要求1所述的方法,氧化物陶瓷复合材料中的氧化物陶瓷为氧化铝、氧化硅、氧化锆、氧化钛等金属氧化铝。
3.根据权利要求1所述的方法,活化因子为需要涂覆金属相关的氧化物材料,优选为氧化铜(CuO或者Cu2O)氧化(NiO)等材料,活化因子也可能为氧化铬、氧化银、氧化锡、氧化锌、氧化钛等材料,添加的含量质量分数为1-8%。
4.根据权利要求1所述的方法,含活化因子的氧化物陶瓷复合材料的制备技术有无压烧结、热压烧结、等离子快速烧结等烧结技术,烧结温度在1000-1700℃,保温时间为0.5-8h。
5.根据权利要求1所述的方法,激光表面处理主要采用单脉冲激光,具体的处理产生如下:激光波长在800-1400nm,激光的功率在2-18W,速度:0.4-2.4m/s,频率:60-240kHz,能量密度:0.6-20j/cm2
6.根据权利要求1所述的方法,将表面活化完的陶瓷复合材料基板浸入商用或者自制的化学试剂中进行镀金属处理,如铜、银、铂、镍等金属层,化学镀的温度控制在20-80℃,时间控制在15-40分钟。
7.根据权利要求1所述的方法,将金属化后的基体放入去离子水或者酒精清洗,然后烘干处理。
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