CN111509013A - Supporting substrate, preparation method thereof and display panel - Google Patents

Supporting substrate, preparation method thereof and display panel Download PDF

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Publication number
CN111509013A
CN111509013A CN202010343844.1A CN202010343844A CN111509013A CN 111509013 A CN111509013 A CN 111509013A CN 202010343844 A CN202010343844 A CN 202010343844A CN 111509013 A CN111509013 A CN 111509013A
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layer
support
supporting
area
substrate
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CN111509013B (en
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谷朋浩
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40OLEDs integrated with touch screens
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The invention discloses a supporting substrate, a preparation method thereof and a display panel, and relates to the technical field of display. The supporting substrate comprises a device layer and a supporting layer which are overlapped, the device layer comprises an identification area and a non-identification area, the supporting layer comprises a first supporting area corresponding to the position of the identification area and a second supporting area corresponding to the position of the non-identification area, and the thickness of the first supporting area is smaller than that of the second supporting area. According to the embodiment of the invention, the thickness of the first support region corresponding to the identification region of the support layer and the device layer is reduced, so that the transmittance of the first support region is improved, the optical loss is reduced, and the optical identification rate and the sensitivity of the optical sensor are improved.

Description

Supporting substrate, preparation method thereof and display panel
Technical Field
The invention relates to the technical field of display, in particular to a supporting substrate, a preparation method of the supporting substrate and a display panel.
Background
Organic light Emitting diode Display devices (Organic L light Emitting Display, O L ED) are becoming the first choice of screens, have many advantages of self-luminescence, high luminous efficiency, short response time, high definition and contrast, and the like, and can ensure that the screens have certain flexibility and adaptability.
At present, a flexible display panel generally includes a cover plate, a module functional film layer, a light emitting film layer, a back plate film layer, a support layer, and other film layer structures. Compared with other film layer structures in the whole flexible display panel, the supporting layer has thicker thickness, so that when the flexible display screen is bent, the mechanical property of the supporting layer has larger influence on the bending reliability, the deformation capability and the stress of the display substrate and the display panel, and the mechanical parameters, the thickness and the like of the supporting layer directly influence the integral bending property of the thin display substrate film layer and the thin packaging film layer attached to the supporting layer.
In the current flexible display panel, the material of the supporting layer generally adopts Polyimide (PI) material, and has good crease improvement compared with polyethylene terephthalate (PET), but because the transmittance of the PI material is generally 20% -60%, the optical loss is large, and further the optical recognition rate and sensitivity of optical sensors such as 3D imaging recognition and fingerprint recognition carried by the display device are reduced.
Disclosure of Invention
The embodiment of the invention provides a supporting substrate, a preparation method thereof and a display panel, which are used for solving the problem that the supporting layer of the flexible display panel has large optical loss.
The embodiment of the invention provides a supporting substrate, which comprises a device layer and a supporting layer which are overlapped, wherein the device layer comprises an identification area and a non-identification area, the supporting layer comprises a first supporting area corresponding to the position of the identification area and a second supporting area corresponding to the position of the non-identification area, and the thickness of the first supporting area is smaller than that of the second supporting area.
In an exemplary embodiment, a side of the support layer facing away from the device layer is provided with a groove, the groove being provided at the first support region.
In an exemplary embodiment, the support layer comprises a first support layer and a second support layer arranged on a side of the first support layer facing away from the device layer, the second support layer being arranged at the second support region.
In an exemplary embodiment, the peel strength between the first support layer and the second support layer is not less than 12N/Inch, and the elastic modulus of the first support layer is greater than the elastic modulus of the second support layer.
In an exemplary embodiment, the first support layer has a modulus of elasticity in the range of 2GPa to 8GPa, and the second support layer has a modulus of elasticity in the range of 1GPa to 7 GPa.
In an exemplary embodiment, the first support region has a thickness of 10 microns to 20 microns and the second support region has a thickness of 25 microns to 60 microns.
In an exemplary embodiment, the transmittance of the first support region is not less than 70%.
In an exemplary embodiment, a side of the device layer facing away from the support film is provided with a cavity, which is provided in the identification area.
An embodiment of the present invention further provides a display panel, including: the display substrate and the aforementioned support substrate are overlapped, and the display substrate is located on one side of the support layer, which is far away from the device layer.
In an exemplary embodiment, the display device further comprises a buffer layer arranged between the support layer and the display substrate, wherein the surface of one side of the support layer close to the device layer is flush, and the surface of one side of the buffer layer far away from the device layer is flush.
The embodiment of the invention also provides a preparation method of the supporting substrate, which comprises the following steps:
respectively preparing a device layer and a supporting layer, wherein the device layer comprises an identification area and a non-identification area, the supporting layer comprises a first supporting area and a second supporting area, and the thickness of the first supporting area is smaller than that of the second supporting area;
attaching the supporting layer to the display substrate;
the device layer is attached to one side, away from the display substrate, of the supporting layer, the first supporting area corresponds to the recognition area in position, and the second supporting area corresponds to the non-recognition area in position.
In an exemplary embodiment, preparing the support layer includes:
forming a support film on a support substrate;
and etching a groove on the support film through an etching process, stripping the support film to form a support layer, and arranging the groove in the first support area.
In an exemplary embodiment, preparing the support layer includes:
the supporting film is coated on the base station, a boss is arranged on the base station, the supporting film is peeled off after being solidified to form a supporting layer, a groove is formed in the position, corresponding to the boss, of the supporting layer, and the groove is formed in the first supporting area.
In an exemplary embodiment, preparing the support layer includes:
forming a first support layer on a support substrate;
a second support layer is formed on the first support layer, the second support layer being formed in the second support region.
The embodiment of the invention provides a support substrate, a preparation method thereof and a display panel.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the example serve to explain the principles of the invention and not to limit the invention.
FIG. 1 is a front view of a display panel;
FIG. 2 is a cross-sectional view of the display panel of FIG. 1 at position A-A;
FIG. 3 is a diagram illustrating a display panel according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a supporting substrate according to an embodiment of the present invention;
FIG. 5 is a block diagram of another embodiment of a support substrate;
FIG. 6 is a diagram of a display position structure of a display panel according to an embodiment of the present invention;
FIG. 7A is a schematic view of the formation of a support film according to one embodiment of the present invention;
FIG. 7B is a schematic structural diagram of a supporting layer prepared by etching according to an embodiment of the invention;
FIG. 8 is a schematic view of a support layer prepared by coating method according to an embodiment of the present invention;
FIG. 9A is a schematic view of a support layer prepared by a molding method according to an embodiment of the invention before molding;
FIG. 9B is a schematic diagram of a molding process for preparing a supporting layer by the molding method according to the embodiment of the present invention;
fig. 9C is a schematic structural diagram of a support layer prepared by a molding method according to an embodiment of the invention.
Description of the reference numerals
10-a display panel; 100-a support layer; 100 a-a first support layer;
100 b-a second support layer; 100b 1-windowing; 100 c-a support film;
101-a first support region; 102-a second support region; 110-a buffer layer;
111-a first buffer; 112-a second buffer; 200-a display substrate;
210-a flexible substrate; 220-a first insulating layer; 221-an active layer;
222-a second insulating layer; 2231-a gate electrode; 2232-a first capacitive electrode;
224-a third insulating layer; 225-a second gate metal layer; 2251-a second capacitive electrode;
226-fourth insulating layer; 2271 — a source electrode; 2272 — a drain electrode;
228-a planarization layer; 231-a first electrode; 232-pixel definition layer;
233-spacer columns; 234 — organic light emitting layer; 235-a second electrode;
240-packaging structure layer; 241-a first inorganic encapsulation layer; 242-organic encapsulation layer;
243-second inorganic encapsulation layer; 250-a polarizer; 260-touch control structure layer;
270-cover plate; 300-a device layer; 301-an identification area;
302-non-identification area; 400-a support substrate; 500-a base station;
510-a boss; 610-lower die; 620-upper die;
621-briquetting.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that the embodiments and features of the embodiments in the present application may be arbitrarily combined with each other without conflict.
In the drawings, the size, thickness, and position of each component may be exaggerated for clarity. Therefore, the present invention is not necessarily limited to the dimensions, and the shapes and sizes of the respective members in the drawings do not reflect actual proportions. In addition, the drawings schematically show desirable examples, and one embodiment of the present invention is not limited to the shapes, numerical values, and the like shown in the drawings.
The ordinal numbers such as "first", "second", "third", and the like in the present specification are provided for avoiding confusion among the constituent elements, and are not limited in number.
In this specification, functions of the "source electrode" and the "drain electrode" may be interchanged when a transistor having opposite polarities is used, when a current direction changes during circuit operation, or the like. Therefore, in this specification, "source electrode" and "drain electrode" may be exchanged with each other.
Fig. 1 is a front view of a display panel, and fig. 2 is a cross-sectional view of a position a-a of the display panel shown in fig. 1. The display panel 10 includes a support layer 100, a buffer layer 110 disposed on the support layer 100, a display substrate 200 disposed on a side of the buffer layer 110 away from the support layer 100, and a device layer 300 disposed on a side of the support layer 100 away from the buffer layer 110, wherein a side of the display substrate 200 away from the buffer layer 110 is a light emitting side, and the device layer 300 is used for supporting the display substrate and providing an installation space for an optical sensor. The device layer comprises an identification area 301 and a non-identification area 302, an optical sensor such as a 3D imaging identification, fingerprint identification or off-screen sensor can be placed in the identification area 301, and light reflected by a finger or an imaging object can penetrate through the display substrate and be received by the optical sensor such as the fingerprint identification.
The display substrate comprises a flexible substrate, an array structure layer arranged on one side of the flexible substrate, which is far away from the supporting layer, a light emitting structure layer arranged on one side of the array structure layer, which is far away from the flexible substrate, and a packaging structure layer covering the light emitting structure layer, wherein the array structure layer and the flexible substrate form a back plate structure layer.
The display substrate further comprises a polaroid arranged on one side, away from the light-emitting structure layer, of the packaging structure layer, a touch control structure layer arranged on one side, away from the packaging structure layer, of the polaroid, and a cover plate arranged on one side, away from the polaroid, of the touch control structure layer. In an example, the positions of the polarizer and the touch structure layer may be changed, that is, the display substrate further includes a touch structure layer disposed on a side of the package structure layer away from the light emitting structure layer and a polarizer disposed on a side of the touch structure layer away from the package structure layer.
Based on the technical requirements of 3D imaging identification, fingerprint identification and the like of the full-face screen, PET is generally adopted as a material of a supporting layer, the PET has high transmittance, and the transmittance can be more than 90%, so that the optical loss caused by the supporting layer is small, and the requirements of the optical identification rate and the sensitivity of an optical sensor can be met. When the technical requirements such as 3D imaging identification and fingerprint identification based on a full screen are transferred to the flexible display panel, the folding position can have obvious creases when PET is folded, and the display requirements of the flexible display panel can not be met. Therefore, in flexible display panels, PI is generally used instead of PET.
However, the transmittance of the PI material is generally 20% -60%, even though the thinnest PI of 25 micrometers is adopted, the transmittance of the PI which is better and can be obtained at present is only 60% -70%, the optical loss is large, the requirements of the optical recognition rate and the sensitivity of an optical sensor cannot be met, meanwhile, the high-transmittance PI is expensive in manufacturing cost, the manufacturing cost of the display panel is greatly improved, and the application popularity is poor.
In an exemplary embodiment, as shown in fig. 2, a hollow area is formed by removing portions of the support layer 100 and the buffer layer 110 corresponding to the identification area 301 of the device layer 300, and the hollow area can enable light passing through the display substrate 200 to be directly received by the optical sensor, so that there is no optical loss caused by the support layer, and the optical identification rate and sensitivity of the optical sensor are improved.
In order to solve the above problems, embodiments of the present invention provide a supporting substrate, a manufacturing method thereof, and a display panel. The supporting substrate comprises a device layer and a supporting layer which are overlapped, the device layer comprises an identification area and a non-identification area, the supporting layer comprises a first supporting area corresponding to the position of the identification area and a second supporting area corresponding to the position of the non-identification area, and the thickness of the first supporting area is smaller than that of the second supporting area.
The technical solution of the embodiments of the present invention is specifically described below with reference to the accompanying drawings.
Fig. 3 is a structural diagram of a display panel according to an embodiment of the invention. As shown in fig. 3, the display panel 10 includes a support layer 100 and a display substrate 200 stacked on each other, and a device layer 300 disposed on a side of the support layer 100 facing away from the display substrate 200. The display substrate 200 has a light exit side, and the support layer 100 is located at a side of the display substrate 200 facing away from the light exit side. The device layer 300 includes an identification region 301 and a non-identification region 302, and an optical sensor such as fingerprint recognition or 3D imaging recognition may be disposed in the identification region 301. The support layer 100 includes a first support region 101 corresponding to the position of the identification region 301 and a second support region 102 corresponding to the position of the non-identification region 302, and the thickness of the first support region 101 is smaller than that of the second support region 102. Among them, the support layer 200 and the device layer 300 constitute a support substrate.
According to the embodiment of the invention, under the condition of ensuring the supporting performance of the supporting layer, the thickness of the first supporting area corresponding to the identification area of the device layer is reduced, so that the transmittance of the first supporting area is improved, the optical loss is reduced, and the optical identification rate and the sensitivity of the optical sensor are improved.
Fig. 4 is a structural diagram of a supporting substrate according to an embodiment of the invention.
In an exemplary embodiment, as shown in fig. 4, a surface of the support layer 100 near the device layer 300 is flush, and a surface of the first support region 101 facing the device layer 300 is closer to the device layer 300 than a surface of the second support region 102 facing the device layer 300. The side of the device layer 300 facing away from the support layer 100 is provided with cavities, and the cavities on the device layer 300 are provided in the identification area 301. Optical sensors such as fingerprint identification and 3D imaging identification can be accommodated in the concave cavity. In one example, the cavity bottom of the concave cavity is a light-transmitting structure. In another example, the cavity extends through the device layer, and the depth of the cavity is equal to the thickness of the device layer.
In an exemplary embodiment, as shown in fig. 4, a side of the support layer 100 facing away from the device layer 300 is provided with a groove, the groove is provided in the first support region 101, and an area of the support layer 100 other than the groove is provided in the second support region 102. In the present embodiment, the material of the support layer 100 includes polyimide. Thickness X of first support region 1011May be 10-20 microns, i.e. the distance between the groove bottom of the groove and the side of the support layer close to the device layer 300 is 10-20 microns, in order to have good light transmission. Thickness X of second support region 1022Is 25 micrometers to 60 micrometers for good support. In an example, where the thickness of the first support region 101 is 10 microns, the transmittance of the first support region 101 may be close to 80% -85%, with only 5% -10% optical loss compared to PET.
Fig. 5 is a structural diagram of another supporting substrate according to an embodiment of the invention. In an exemplary embodiment, as shown in fig. 5, the support layer 100 includes a first support layer 100a and a second support layer 100b disposed on a side of the first support layer 100a facing away from the device layer 300, the second support layer 100b being disposed at the second support region 102. In an example, the second support layer 100b is provided with a window, which is provided at the first support region 101. In this embodiment, in order to prevent peeling between the first support layer 100a and the second support layer 100b, the peel strength between the first support layer 100a and the second support layer 100b is not less than 12N/Inch, and optionally, the peel strength between the first support layer 100a and the second support layer 100b is 17N/Inch.
In an exemplary embodiment, as shown in fig. 5, the materials of the first and second support layers 100a and 100b each include polyimide. Thickness Y of the first support layer 100a110-20 microns, a transmittance of 70-90%, and a thickness Y of the second support layer2Is 15 micrometers to 50 micrometers, and the transmittance is not particularly required, that is, the thickness of the first support region is 10 micrometers to 20 micrometers, and the thickness of the second support region is 25 micrometers to 60 micrometers.
In an exemplary embodiment, the elastic modulus of the first support layer 100a is greater than that of the second support layer 100b, and the second support layer 100a may buffer an impact stress when the display panel is bent. In one example, the elastic modulus of the first support layer 100a is 2GPa to 8GPa, and the elastic modulus of the second support layer 100b is 1GPa to 7 GPa.
In an exemplary embodiment, the transmittance of the first supporting region is not less than 70%, wherein the transmittance may be the transmittance of light with a wavelength of 550 nm.
It should be noted that the polyimide is selected as the support layer, which is only an exemplary illustration, and therefore, the technical scheme that the thickness of the support layer and the identification area corresponding to the thinned support layer provided by the embodiment of the present invention is adopted as the support layer material meeting the performance requirement of the flexible display panel falls within the protection scope of the present invention.
In an exemplary embodiment, as shown in fig. 3, the buffer layer 110 fills a space enclosed by the first support region 101 and the second support region 102. In one example, the surface of the buffer layer 110 on the side facing away from the support layer 100 is flush, in other words, the position on the buffer layer 110 where the space is filled is set as a first buffer region 111, and the position on the buffer layer 110 at the periphery of the first buffer region 111 is set as a second buffer region 112. The sum of the thicknesses of the first buffer region 111 and the first support region 101 is equal to the sum of the thicknesses of the second buffer region 112 and the second support region 102. Therefore, when the supporting layer is attached to the display substrate, the contact surface of the roller can be kept flush. In this embodiment, the buffer layer is used not only to bond the display substrate and the support layer, but also to buffer the impact stress when the display panel is bent.
In another example, the thickness Z of the first buffer region 1111Is 25 micrometers to 60 micrometers, and the thickness Z of the second buffer region 1122Is 15 microns to 50 microns. It should be noted that the thickness of the buffer layer 110 should not be too thick, so as to avoid glue overflow and other process risks. In this embodiment, the buffer layer may be an Optical Clear Adhesive (OCA), and the optical Adhesive includes at least one of silicone, acrylic resin, unsaturated polyester, polyurethane, and epoxy resin.
The technical scheme of the embodiment of the invention is further illustrated by the preparation process of the display panel of the embodiment of the invention. The preparation process of the display panel mainly comprises three parts, wherein the first part comprises preparation of a display substrate, the second part comprises preparation of a device layer and a supporting layer, and the third part comprises attachment. The preparation processes of the display substrate, the device layer and the support plate have no sequence requirement and can be carried out simultaneously. The three parts of the preparation process are described below.
First, preparation of display substrate in first part
The "patterning process" referred to in this section includes processes of depositing a film, coating a photoresist, mask exposing, developing, etching, and stripping a photoresist. The deposition may employ any one or more selected from sputtering, evaporation and chemical vapor deposition, the coating may employ any one or more selected from spray coating and spin coating, and the etching may employ any one or more selected from dry etching and wet etching. "thin film" refers to a layer of a material deposited or coated onto a substrate. The "thin film" may also be referred to as a "layer" if it does not require a patterning process throughout the fabrication process. When the "thin film" requires a patterning process throughout the fabrication process, it is referred to as a "thin film" before the patterning process and a "layer" after the patterning process. The "layer" after the patterning process includes at least one "pattern".
Fig. 6 is a structural diagram of a display area of a display panel according to an embodiment of the invention. In an exemplary embodiment, as shown in fig. 6, the preparation of the display substrate may include:
(1) a flexible substrate 210 is prepared on a glass carrier plate.
(2) An array structure layer pattern is prepared on the flexible substrate 210. The array structure layer comprises a thin film transistor and a first storage capacitor. In an exemplary embodiment, the preparation of the array structure layer includes:
a first insulating film and an active layer film are sequentially deposited on the flexible substrate 210, and the active layer film is patterned through a patterning process to form a first insulating layer 220 covering the entire flexible substrate and an active layer 221 pattern disposed on the first insulating layer 200.
Subsequently, a second insulating film and a first metal film are sequentially deposited, and the first metal film is patterned through a patterning process to form a second insulating layer 222 covering the active layer 221 pattern, and a first gate metal layer pattern disposed on the second insulating layer 222, the first gate metal layer pattern being formed at a display position and including at least a first gate electrode 2231 and a first capacitor electrode 2232.
Subsequently, a third insulating film and a second metal film are sequentially deposited, and the second metal film is patterned through a patterning process to form a third insulating layer 224 covering the first gate metal layer and a second gate metal layer pattern disposed on the third insulating layer 224, where the second gate metal layer pattern at least includes the second capacitor electrode 2251, and the position of the second capacitor electrode 2251 corresponds to the position of the first capacitor electrode 2232.
Subsequently, a fourth insulating film is deposited and patterned by a patterning process to form a fourth insulating layer 226 pattern covering the second gate metal layer, two first via holes are formed in the fourth insulating layer 226, and the fourth insulating layer 226, the third insulating layer 224 and the second insulating layer 222 in the two first via holes are etched away to expose the surface of the active layer 221.
Subsequently, a third metal film is deposited, and the third metal film is patterned by a patterning process to form a source-drain metal layer pattern on the fourth insulating layer, the source-drain metal layer including a source electrode 2271 and a drain electrode 2272.
To this end, an array structure layer of the completed display position is prepared on the flexible substrate 210. In the array structure layer of the display position, the active layer 221, the gate electrode 2231, the source electrode 2271, and the drain electrode 2272 constitute a thin film transistor, and the first capacitor electrode 2232 and the second capacitor electrode 2251 constitute a first storage capacitor.
(3) A flat film of organic material is applied on the flexible substrate on which the foregoing pattern is formed, a planarization (P L N) layer 228 is formed to cover the entire flexible substrate, and a second via hole is formed on the flat layer 228 through a masking, exposure, and development process, the flat layer in the second via hole is developed away to expose the surface of the drain electrode 2272.
(4) And forming a light emitting structure layer on the flexible substrate on which the patterns are formed. The light emitting structure layer includes a first electrode 231, a pixel defining layer 232, spacer pillars 233, an organic light emitting layer 234, and a second electrode 235. The preparation process of the light emitting structure layer comprises the following steps:
a transparent conductive film is deposited on the flexible substrate with the patterns, the transparent conductive film is patterned through a patterning process to form a first electrode 231 pattern, and the first electrode 231 is formed on the flat layer 228 at the display position and is connected with the drain electrode 2272 of the thin film transistor through a second via hole. In this embodiment, the first electrode is an anode.
Subsequently, a pixel definition film is coated on the substrate on which the pattern is formed, and a pixel definition (PD L) layer 232 is formed through masking, exposing, and developing processes, wherein a pixel opening is formed on the pixel definition layer at the display position, and the pixel definition layer in the pixel opening is developed away to expose the surface of the first electrode 231.
Subsequently, an organic material thin film is coated on the flexible substrate on which the aforementioned pattern is formed, and a plurality of spacer Post (PS)233 patterns are formed through a masking, exposing, and developing process.
An organic light emitting layer 234 and a second electrode layer 235 are sequentially formed on the flexible substrate on which the aforementioned patterns are formed. The organic light emitting layer 234 includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer, which are stacked, and formed in the pixel opening of the display position to connect the organic light emitting layer 234 with the first electrode 231, and the second electrode 235 is formed on the pixel defining layer 232, connected with the organic light emitting layer 234, and wraps the plurality of spacer pillars on the pixel defining layer. In this embodiment, the second electrode is a cathode.
(5) And an encapsulation layer including a first inorganic encapsulation layer 241, an organic encapsulation layer 242, and a second inorganic encapsulation layer 243, which are stacked. The first inorganic encapsulation 241 layer covers the second electrode 235 at the display position. The second inorganic encapsulation layer 243 covers the first inorganic encapsulation layer 241 and the organic encapsulation layer 242.
(6) The polarizer 250, the touch control structure layer 260 and the cover plate 270 are sequentially attached to the substrate on which the patterns are formed.
The flexible substrate is peeled off from the glass carrier to form the display substrate 200. Thus, even though the preparation of the display substrate is completed, as shown in fig. 6, the prepared display substrate includes:
a flexible substrate 210;
a first insulating layer 22 disposed on the flexible substrate 210;
an active layer 221 disposed on the first insulating layer 220;
a second insulating layer 222 disposed on the active layer 221;
a first gate metal layer disposed on the second insulating layer 222, the first gate metal layer including at least a gate electrode 2231 and a first capacitor electrode 2232;
a third insulating layer 224 covering the first gate metal layer;
a second gate metal layer disposed on the third insulating layer 224, the second gate metal layer including at least a second capacitor electrode 2251;
a fourth insulating layer 226 covering the second gate metal layer, wherein a first via hole is formed on the fourth insulating layer 226, and the active layer 221 is exposed by the first via hole;
the source and drain metal layer is arranged on the fourth insulating layer and at least comprises a source electrode 2271 and a drain electrode 2272, the source electrode 2271 and the drain electrode 2272 are respectively connected with the active layer 221 through a first through hole, and a conductive channel is formed between the source electrode 2271 and the drain electrode 2272;
a flat layer 228 covering the structure, wherein a second via hole exposing the drain electrode 2272 is disposed on the flat layer 228;
a first electrode 231 disposed on the planarization layer 228, the first electrode 231 being connected to the drain electrode 2272 through the second via;
a pixel defining layer 232 disposed on the first electrode 221, wherein a pixel opening is disposed on the pixel defining layer 232 and exposes the first electrode 231;
a plurality of spacer columns 233 disposed on the pixel defining layer 232;
an organic light emitting layer 234 disposed in the pixel opening, the organic light emitting layer 234 being connected to the first electrode 231;
a second electrode 235 disposed on the organic light emitting layer 234; the first electrode, the pixel defining layer, the spacer pillar, the organic light emitting layer and the second electrode form a light emitting structure layer
The encapsulation structure layer 240 covering the foregoing structure, the encapsulation structure layer 240 includes a first inorganic encapsulation layer 241 covering the light emitting structure layer, an organic encapsulation layer 242 disposed on a side of the first inorganic encapsulation layer 241 away from the light emitting structure layer, and a second inorganic encapsulation layer 243 disposed on a side of the organic encapsulation layer 242 away from the first inorganic encapsulation layer 241, wherein the organic encapsulation layer 242 also plays a role of planarization.
The polarizer 250 is disposed on a side of the package structure layer 240 away from the light emitting structure layer, the touch structure layer 260 is disposed on a side of the polarizer 250 away from the package structure layer 250, and the cover plate 270 is disposed on a side of the touch structure layer 260 away from the polarizer 250.
In the structure, the first insulating layer, the active layer, the first gate metal layer, the third insulating layer, the second gate metal layer, the fourth insulating layer and the source drain metal layer form an array structure layer, and the flexible substrate, the array structure layer and the flat layer form a back plate structure layer. In this embodiment, the first electrode may be an anode and the second electrode may be a cathode.
In an exemplary embodiment, the first, second, third and fourth insulating layers may be formed of one or more of silicon Oxide (SiOx), silicon nitride (SiNx) and silicon oxynitride (SiON), which may be single-layer, multi-layer or composite layers, the second and third insulating layers may be referred to as Gate Insulating (GI) layers, and the fourth insulating layer may be referred to as interlayer insulating (I L D) layer, the first gate metal layer, the second gate metal layer and the source and drain metal layers may be formed of a metal material, such as one or more of silver (Ag), copper (Cu), aluminum (Al), titanium (Ti) and molybdenum (Mo), or an alloy material thereof, such as aluminum neodymium alloy (AlNd) or molybdenum niobium alloy (MoNb), which may be single-layer structure, or multi-layer composite structure, such as Ti/Al/Ti, the active layer may be formed of amorphous indium gallium zinc Oxide (a-IGZO), zinc oxynitride (ZnON), Indium Zinc Tin Oxide (IZTO), amorphous silicon (a-Si), silicon-Si, hexagonal silicon Oxide (p-Si), indium tin Oxide (IZO), Indium Tin Oxide (ITO), indium tin Oxide (indium tin Oxide), indium tin Oxide (indium tin Oxide), indium tin Oxide (indium tin Oxide), indium tin Oxide (indium tin Oxide), indium tin Oxide (indium tin.
Preparation of support layer in second and third parts
A first method of making a support layer, as shown in fig. 7A-7B, comprises:
forming a support film 100c on the support substrate 400;
a groove is etched in the support film 100c by an etching process, and a support layer is formed after peeling off the support film, the groove being disposed in the first support region 101.
In one example, the etching process may employ dry etching, and the dry etching may employ plasma etching. The material of the supporting layer film is polyimide, and the thickness of the supporting layer film is 25-60 micrometers. The support substrate may include glass, and is peeled from the support substrate after the support layer is formed.
Fig. 7A is a schematic diagram illustrating formation of a support film according to an embodiment of the invention, and fig. 7B is a schematic diagram illustrating a structure of a support layer prepared by an etching method according to an embodiment of the invention.
A second method of preparing a support layer, as shown in fig. 8, comprises:
the supporting film 100c is coated on the base 500, the base 500 is provided with a boss 510, the supporting film is peeled off after being cured to form the supporting layer 100, a groove is formed at the position of the supporting layer 100 corresponding to the boss, and the groove is arranged in the first supporting area 101.
In this embodiment, the material of the support film may include polyimide, and the curing manner of the support film may be photo-curing or thermal-curing. The base may include a stainless steel base having a heating function.
Fig. 8 is a schematic diagram of a support layer prepared by a coating method according to an embodiment of the invention.
A third method of making a support layer, comprising:
forming a first support layer on a support substrate;
a second support layer is formed on the first support layer, the second support layer being formed in the second support region.
In this embodiment, the supporting substrate may be a lower mold, as shown in fig. 9A to 9C, and the method for preparing the supporting layer may specifically include
Forming a first support layer 100a on the lower mold 610;
forming a second support film on the first support layer 100 a;
and forming a window on the second support film by adopting a hot pressing process, forming a second support layer 100b on the second support film after the window is formed, forming a support layer 100 by using the first support layer 100a and the second support layer 100b, wherein the window 100b1 is arranged in the first support area 101, and the second support layer 100b is arranged in the second support area 102.
In the hot pressing process, a pressing block 621 is arranged on one side, facing the lower die 610, of the upper die 620, after the upper die 620 and the lower die 610 are closed, the second supporting film forms a window 100b1 at the position of the pressing block 621, the second supporting layer at the window opening position can be completely removed, namely the window opening depth is the same as the thickness of the second supporting layer, a groove can also be formed in the window opening, and the groove depth is close to the thickness of the second supporting layer.
In this embodiment, the materials of the first support layer and the second support layer both include polyimide, and the material of the second support layer adopts thermoplastic polyimide powder, and during the molding process, the thermoplastic polyimide powder is melted and solidified into a film to form the second support layer. The conditions of the hot pressing process may be: the hot pressing temperature is 300-350 ℃, the hot pressing pressure is 0.8-1.0 Newton, and the hot pressing time is 10-30 seconds.
Fig. 9A is a schematic diagram of a support layer prepared by a mold pressing method according to an embodiment of the present invention before mold pressing, fig. 9B is a schematic diagram of a support layer prepared by a mold pressing method according to an embodiment of the present invention during mold pressing, and fig. 9C is a schematic diagram of a support layer structure prepared by a mold pressing method according to an embodiment of the present invention.
Second, preparation of device layer in second part
The device layer is formed through injection molding or die pressing, a cavity is formed on the device layer, and the cavity is arranged in the identification area and the non-identification area outside the cavity. The cavity may also be through the device layer, i.e. the depth of the cavity is equal to the thickness of the device layer.
Third, the third part is attached
(1) And attaching the supporting layer to the display substrate. Paste the supporting layer on locating display substrate, include: the buffer layer is coated on the supporting layer, and one side of the buffer layer, which deviates from the supporting layer, is attached to the display substrate. Wherein the buffer layer may be an optical glue.
(2) The device layer is attached to one side, away from the display substrate, of the supporting layer, the first supporting area corresponds to the recognition area in position, and the second supporting area corresponds to the non-recognition area in position.
It should be noted that, in the third part, coating the buffer layer on the supporting layer may be completed in the preparation process of the supporting layer of the second part, after the supporting layer is completed, coating the buffer layer on the attaching surface of the supporting layer and the display substrate, so as to form a composite structure of the supporting layer and the buffer layer, and when the composite structure is used, the release film is peeled off on the side of the buffer layer departing from the supporting layer.
It can be seen from the structure and the manufacturing process of the display panel of this embodiment that the thickness of the first supporting region of the supporting layer is smaller than that of the second supporting region, the first supporting region has a higher transmittance relative to the second supporting region, after the supporting layer is attached to the display substrate, the device layer is attached to the supporting film, the identification region of the device layer corresponds to the first supporting region, and the non-identification region of the device layer corresponds to the second supporting region.
To further demonstrate the benefits of the embodiments of the present invention, see table one, the optical loss of the support layer is reduced in comparison with two other possible embodiments.
Table one, three schemes for reducing optical loss of the support layer are compared.
Figure BDA0002469375050000151
As can be seen from the above table, the scheme of the embodiment of the present invention is scheme three, and compared with scheme one, there is no problem of stamping, and compared with scheme two, the method has low process difficulty and is easier to implement.
The embodiment of the invention provides a preparation method of a supporting substrate, which comprises the following steps:
respectively preparing a device layer and a supporting layer, wherein the device layer comprises an identification area and a non-identification area, the supporting layer comprises a first supporting area and a second supporting area, and the thickness of the first supporting area is greater than that of the second supporting area;
attaching the supporting layer to the display substrate;
the device layer is attached to one side, away from the display substrate, of the supporting layer, the first supporting area corresponds to the recognition area in position, and the second supporting area corresponds to the non-recognition area in position.
In an exemplary embodiment, preparing the support layer includes:
forming a support film on a support substrate;
and etching a groove on the support film through an etching process, stripping the support film to form a support layer, and arranging the groove in the first support area.
In an exemplary embodiment, preparing the support layer includes:
the supporting film is coated on the base station, a boss is arranged on the base station, the supporting film is peeled off after being solidified to form a supporting layer, a groove is formed in the position, corresponding to the boss, of the supporting layer, and the groove is formed in the first supporting area.
In an exemplary embodiment, preparing the support layer includes:
forming a first support layer on a support substrate;
a second support layer is formed on the first support layer, the second support layer being formed in the second support region.
The embodiment of the invention also provides a display device which comprises the display panel of the embodiment. The display device may be: any product or part with a display bending function, such as a mobile phone, a tablet computer and the like.
Although the embodiments of the present invention have been described above, the above description is only for the convenience of understanding the present invention, and is not intended to limit the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (14)

1. The supporting substrate is characterized by comprising a device layer and a supporting layer which are stacked, wherein the device layer comprises an identification area and a non-identification area, the supporting layer comprises a first supporting area corresponding to the position of the identification area and a second supporting area corresponding to the position of the non-identification area, and the thickness of the first supporting area is smaller than that of the second supporting area.
2. The support substrate of claim 1, wherein a side of the support layer facing away from the device layer is provided with a groove, the groove being provided at the first support region.
3. The support substrate of claim 1, wherein the support layer comprises a first support layer and a second support layer disposed on a side of the first support layer facing away from the device layer, the second support layer being disposed at the second support region.
4. The support substrate of claim 3, wherein: the peel strength between the first supporting layer and the second supporting layer is not less than 12N/Inch, and the elastic modulus of the first supporting layer is greater than that of the second supporting layer.
5. The support substrate of claim 4, wherein: the elastic modulus of the first supporting layer is 2GPa-8GPa, and the elastic modulus of the second supporting layer is 1GPa-7 GPa.
6. The support substrate of any of claims 1-5, wherein the first support region has a thickness of 10 microns to 20 microns and the second support region has a thickness of 25 microns to 60 microns.
7. The support substrate of any one of claims 1-5, wherein: the transmittance of the first support region is not less than 70%.
8. The support substrate of any one of claims 1-5, wherein: and a concave cavity is arranged on one side of the device layer, which is far away from the support film, and the concave cavity is arranged in the identification area.
9. A display panel, comprising: a stacked display substrate and a support substrate according to any of claims 1-9, the display substrate being located on a side of the support layer facing away from the device layer.
10. The display panel of claim 9, further comprising a buffer layer disposed between the support layer and the display substrate, wherein a side of the support layer adjacent to the device layer is flush with the surface, and a side of the buffer layer away from the device layer is flush with the surface.
11. A method of preparing a support substrate, comprising:
respectively preparing a device layer and a supporting layer, wherein the device layer comprises an identification area and a non-identification area, the supporting layer comprises a first supporting area and a second supporting area, and the thickness of the first supporting area is smaller than that of the second supporting area;
the supporting layer is attached to the display substrate;
and pasting the device layer on one side of the support layer, which is far away from the display substrate, wherein the first support area corresponds to the identification area in position, and the second support area corresponds to the non-identification area in position.
12. The method of claim 11, wherein: the preparation of the support layer comprises:
forming a support film on a support substrate;
and etching a groove on the support film through an etching process, stripping the support film to form a support layer, wherein the groove is arranged in the first support area.
13. The method of claim 11, wherein: the preparation of the support layer comprises:
coating a support film on a base station, wherein the base station is provided with a boss, the support film is peeled off after being cured to form a support layer, a groove is formed at the position of the support layer corresponding to the boss, and the groove is arranged in the first support area.
14. The method of claim 11, wherein: the preparation of the support layer comprises:
forming a first support layer on a support substrate;
forming a second support layer on the first support layer, the second support layer being formed at the second support region.
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