CN110767841A - Display substrate, preparation method thereof and display device - Google Patents
Display substrate, preparation method thereof and display device Download PDFInfo
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- CN110767841A CN110767841A CN201911056324.6A CN201911056324A CN110767841A CN 110767841 A CN110767841 A CN 110767841A CN 201911056324 A CN201911056324 A CN 201911056324A CN 110767841 A CN110767841 A CN 110767841A
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- 239000000758 substrate Substances 0.000 title claims abstract description 125
- 238000002360 preparation method Methods 0.000 title abstract description 22
- 239000010410 layer Substances 0.000 claims description 337
- 238000000034 method Methods 0.000 claims description 35
- 238000000059 patterning Methods 0.000 claims description 25
- 238000005538 encapsulation Methods 0.000 claims description 18
- 239000011241 protective layer Substances 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 8
- -1 acryl Chemical group 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 238000004806 packaging method and process Methods 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 43
- 239000010409 thin film Substances 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011185 multilayer composite material Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002537 cosmetic Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The application discloses display substrate and preparation method, display device thereof, this display substrate includes: the display substrate comprises a substrate, a driving structure layer and a light emitting structure layer, wherein the driving structure layer and the light emitting structure layer are stacked on the substrate, a reflecting layer is arranged in the driving structure layer or the light emitting structure layer, and in addition, the orthographic projection of a light emitting area of the light emitting structure layer is at least partially positioned outside the orthographic projection of the reflecting layer on a plane parallel to the display substrate. According to the scheme provided by the embodiment, the reflecting layer is arranged outside the light-emitting region, the light-emitting region directly displays, the non-light-emitting region displays in a total reflection mode, and the display contrast is improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display substrate, a preparation method thereof and a display device.
Background
The mirror surface display is realized mainly by using a semi-transparent semi-reflective film material, and can be used for vehicle-mounted rearview mirrors, cosmetic mirrors and the like. This way both a conventional mirror effect and an image display can be achieved.
Disclosure of Invention
At least one embodiment of the invention provides a display substrate, a preparation method thereof and a display device, and display contrast is improved.
To achieve the above object, at least one embodiment of the present invention provides a display substrate, including: the display substrate comprises a substrate, a driving structure layer and a light emitting structure layer, wherein the driving structure layer and the light emitting structure layer are stacked on the substrate, a reflecting layer is arranged in the driving structure layer or the light emitting structure layer, and in addition, the orthographic projection of a light emitting area of the light emitting structure layer is at least partially positioned outside the orthographic projection of the reflecting layer on a plane parallel to the display substrate.
In one embodiment, an encapsulation layer is disposed in the light emitting structure layer, and the reflective layer is disposed on a side of the encapsulation layer away from the substrate.
In one embodiment, a protective layer is disposed between the reflective layer and the encapsulation layer.
In one embodiment, the orthographic projection of the reflective layer covers all of the display area of the display substrate except the light emitting area on a plane parallel to the display substrate.
In one embodiment, an area of an orthogonal projection of the reflective layer on a plane parallel to the display substrate is 10% to 40% of an area of a display region of the display substrate.
In one embodiment, the reflective layer is made using at least one of: molybdenum, aluminum, titanium/aluminum/titanium multilayer composites.
In an embodiment, an anode layer is disposed in the light emitting structure layer, and the reflective layer and the anode layer are disposed on the same layer.
In one embodiment, the anode layer and the reflective layer are a single structure, and the distance between adjacent single structures is 3 μm.
In one embodiment, the light emitting structure layer further includes a pixel defining layer disposed on the anode layer, the pixel defining layer being made of acryl.
An embodiment of the invention provides a display device, which includes the display substrate.
An embodiment of the present invention provides a method for manufacturing a display substrate, including:
forming a substrate;
and sequentially forming a driving structure layer and a light-emitting structure layer, wherein the driving structure layer or the light-emitting structure layer comprises a reflecting layer, and the orthographic projection of a light-emitting area of the light-emitting structure layer is at least partially positioned outside the orthographic projection of the reflecting layer on a plane parallel to the display substrate.
In one embodiment, the forming the light emitting structure layer includes:
sequentially forming an anode layer, a pixel defining layer, an organic light emitting layer, a cathode layer and a packaging layer;
forming a protective layer on the packaging layer by patterning, and exposing the integrated circuit binding region, the flexible circuit board binding region and a first voltage lead;
and patterning the protective layer to form the reflecting layer, exposing the integrated circuit binding region and the flexible circuit board binding region, and overlapping the reflecting layer with the first voltage lead.
In one embodiment, the reflective layer is formed through the same patterning process when the anode in the light emitting structure layer is formed.
Compared with the related art, an embodiment of the present invention provides a display substrate, including: the light-emitting device comprises a substrate, a driving structure layer and a light-emitting structure layer, wherein the driving structure layer and the light-emitting structure layer are stacked on the substrate, a reflecting layer is arranged in the driving structure layer or the light-emitting structure layer, and the orthographic projection of the reflecting layer is positioned outside a light-emitting area of the light-emitting structure layer. According to the scheme provided by the embodiment, the reflecting layer is arranged outside the light-emitting area, direct display in the light-emitting area is realized, total reflection display is carried out in the non-light-emitting area, the transmittance of the display area is higher, and the contrast of the display screen is improved.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the example serve to explain the principles of the invention and not to limit the invention.
FIG. 1 is a schematic structural diagram of a display substrate according to a first embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a display substrate according to a first embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating a substrate after a substrate pattern is formed according to a first embodiment of the present invention;
FIG. 4 is a diagram illustrating an active layer and a gate electrode pattern formed according to the first embodiment of the present invention;
fig. 5 is a schematic view after a third insulating layer, a source electrode, and a drain electrode are patterned according to the first embodiment of the present invention;
FIG. 6 is a schematic diagram illustrating an anode pattern formed according to the first embodiment of the present invention;
FIG. 7 is a schematic view showing a pixel defining layer, an organic light emitting layer and a cathode pattern according to the first embodiment of the present invention;
FIG. 8 is a diagram illustrating a patterned package layer according to a first embodiment of the present invention;
FIG. 9 is a schematic view illustrating a protective layer pattern according to a first embodiment of the present invention;
FIG. 10 is a schematic view illustrating a reflective layer pattern according to a first embodiment of the present invention;
FIG. 11 is a schematic view of a display substrate according to a second embodiment of the present invention;
FIG. 12 is a schematic view of a second embodiment of the present invention after forming an anode pattern;
FIG. 13 is a schematic view showing the spacing between the anode and the reflective layer according to the second embodiment of the present invention;
FIG. 14 is a diagram illustrating a pixel defining layer, an organic light emitting layer and a cathode pattern according to a second embodiment of the present invention;
FIG. 15 is a flowchart illustrating a method for fabricating a substrate according to a third embodiment of the present invention.
Description of reference numerals:
1-a glass carrier plate; 10 a-a first substrate; 10 b-a second substrate;
11-a buffer layer; 12-an active layer; 13 — a first insulating layer;
14 — a first gate electrode; 15 — a second gate electrode; 16 — a second insulating layer;
17-a capacitive electrode; 18-a third insulating layer; 19-source electrode;
20-a drain electrode; 21 — a fourth insulating layer; 31-an anode;
32-pixel definition layer; 33 — an organic light-emitting layer; 34-a cathode;
38-encapsulation layer; 39-protective layer; 40-a reflective layer;
101-thin film transistor; 100-a display area; 200-non-display area;
201-integrated circuit pads; 202-flexible circuit board solder pads; 203-cathode lead.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that the embodiments and features of the embodiments in the present application may be arbitrarily combined with each other without conflict.
The steps illustrated in the flow charts of the figures may be performed in a computer system such as a set of computer-executable instructions. Also, while a logical order is shown in the flow diagrams, in some cases, the steps shown or described may be performed in an order different than here.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
The related art mirror display has the following problems: the transmittance of the display area is reduced and is affected by the external reflected light, resulting in a low contrast ratio of the display on the mirror display screen.
An embodiment of the present invention provides a display substrate, including: the light-emitting device comprises a substrate, a driving structure layer and a light-emitting structure layer, wherein the driving structure layer and the light-emitting structure layer are stacked on the substrate, a reflecting layer is arranged in the driving structure layer or the light-emitting structure layer, and the orthographic projection of the reflecting layer is positioned outside a light-emitting area of the light-emitting structure layer. The driving structure layer mainly includes a plurality of Thin Film Transistors (TFTs), and the light emitting structure layer mainly includes an anode, a pixel defining layer, an organic light emitting layer, a cathode, and an encapsulation layer. According to the scheme provided by the embodiment, the display is directly performed on part or all of the light-emitting area, the total reflection display is performed on the non-light-emitting area, the transmittance of the display area is higher, the contrast of the display screen is improved, and the advantages of excellent black level, color gamut, visual angle, flexibility and the like are achieved.
The application is further illustrated by the following specific examples.
First embodiment
Fig. 1 is a schematic structural diagram of a display substrate according to a first embodiment of the present invention, illustrating a structure of the display substrate on a plane perpendicular to the display substrate. As shown in fig. 1, the display substrate includes a driving structure layer and a light emitting structure layer disposed on a substrate in a plane perpendicular to the display substrate, the driving structure layer includes a plurality of thin film transistors, and only one light emitting unit and one thin film transistor are illustrated in fig. 1 as an example. Specifically, the substrate includes a first substrate 10a, a second substrate 10b disposed on the first substrate 10a, and a buffer layer 11 disposed on the second substrate 10b, and the driving structure layer mainly includes a thin film transistor 101 disposed on the buffer layer 11. The light emitting structure layer mainly includes an anode 31 connected to a drain electrode of the thin film transistor 101, a pixel defining layer 32 defining a pixel opening area, an organic light emitting layer 33 disposed in the pixel opening area, a cathode 34 disposed on the organic light emitting layer 33, an encapsulation layer 38 covering the entire substrate, a protective layer 39 disposed on the encapsulation layer 38, and a reflective layer 40 disposed on the protective layer 39. The reflective layer 40 covers the display region of the display substrate, and at least partially exposes a light emitting region of the light emitting structure layer, i.e., a pixel opening region defined by the pixel defining layer 32. The display substrate may further include a Touch Screen Panel (TSP, not shown in fig. 1) disposed on the reflective layer 40, and the Touch Screen Panel and the reflective layer 40 are bonded by an Optical Adhesive (OCA). In addition, a Bottom Film (not shown in fig. 1) disposed on a side of the substrate away from the light emitting structure layer and a top Film (not shown in fig. 1) covering the touch layer may be further included.
Fig. 2 is a schematic structural diagram of a display substrate according to a first embodiment of the invention. As shown in fig. 2, the display substrate includes a display area 100 and a non-display area 200 annularly surrounding the periphery of the display area 100. The reflective layer 40 covers the remaining area of the display area 100 except for the light emitting area. When the reflective layer 40 is formed, an integrated circuit Bonding Pad (IC Bonding Pad)201 and a Flexible circuit board Bonding Pad (FPC Bonding Pad)202 are exposed, and in addition, the reflective layer 40 is lapped to a first voltage lead VSS (low level lead or cathode lead) 203, thereby preventing the reflective layer 40 from being electrostatically accumulated.
The following further illustrates the technical solution of the embodiment of the present invention through the manufacturing process of the display substrate of this embodiment. The "patterning process" in this embodiment includes processes such as film deposition, photoresist coating, mask exposure, development, etching, and photoresist stripping, the "photolithography process" in this embodiment includes processes such as film coating, mask exposure, and development, and the evaporation, deposition, coating, and coating in this embodiment are well-established preparation processes in the related art.
FIGS. 3 to 10 are schematic views illustrating a manufacturing process of the display substrate of this embodiment. The preparation process of the display substrate comprises the following steps:
(1) a base pattern is formed. Forming the base pattern includes: firstly, a layer of flexible material is coated on the glass carrier 1, and is cured to form a film, so as to form a first substrate 10 a. Subsequently, a layer of flexible material is coated on the first substrate 10a, and cured to form a film, forming a second substrate 10 b. Finally, a buffer film is deposited on the second substrate 10b to form a pattern of the buffer layer 11 covering the entire second substrate 10 b. The flexible substrate may be made of Pressure Sensitive Adhesive (PSA), Polyimide (PI), polyethylene terephthalate (PET), or a surface-treated polymer film, as shown in fig. 3. The buffer film may be formed of silicon nitride (SiNx), silicon oxide (SiOx), or the like, and may have a single-layer structure or a multilayer structure of silicon nitride/silicon oxide.
(2) An active layer, a gate electrode, and a capacitor electrode pattern are formed on a substrate. Forming an active layer, a gate electrode, and a capacitive electrode pattern on a substrate includes:
a. on the basis of forming the structure, depositing an active layer film, patterning the active layer film through a patterning process, and forming an active layer 12 pattern arranged on the second substrate 10b in the display area;
b. subsequently, a first insulating film and a first metal film are sequentially deposited, and the first metal film is patterned through a patterning process to form a first insulating layer 13 covering the active layer 12, a first gate electrode 14 disposed on the first insulating layer 13, a second gate electrode 15, and a gate line (not shown) pattern. The first gate electrode 14, the second gate electrode 15, and the gate line are formed only in the display region, and the first insulating layer 13 is formed in the non-display region.
c. Subsequently, a second insulating film and a second metal film are sequentially deposited, and the second metal film is patterned through a patterning process to form a second insulating layer 16 covering the first gate electrode 14 and the second gate electrode 15 and a capacitor electrode 17 pattern disposed on the second insulating layer 16, where the position of the capacitor electrode 17 corresponds to the position of the second gate electrode 15, and the capacitor electrode 17 and the second gate electrode 15 form a capacitor, as shown in fig. 4.
(3) Source and drain electrode patterns are formed.
Forming the source and drain electrode patterns includes:
on the basis of forming the structure, depositing a third insulating film, patterning the third insulating film through a patterning process, forming a third insulating layer 18 pattern with two first via holes in the display area, etching the third insulating layer 18, the second insulating layer 16 and the first insulating layer 13 in the two first via holes to expose the active layer 12;
depositing a third metal film, patterning the third metal film through a patterning process, forming a source electrode 19, a drain electrode 20, and a data line (not shown) pattern in the display region, wherein the source electrode 19 and the drain electrode 20 are respectively connected to the active layer 12 through two first via holes, as shown in fig. 5.
Through the above process, the preparation of the driving structure layer of the display region is completed on the substrate. The driving structure layer comprises an active layer 12, a first gate electrode 14, a second gate electrode 15, a capacitor electrode 17, a source electrode 19, a drain electrode 20, a gate line and a data line, wherein the gate line and the data line are vertically crossed to define a sub-pixel, and a thin film transistor formed by the active layer 12, the first gate electrode 14, the source electrode 19 and the drain electrode 20 is arranged in the sub-pixel. The first insulating layer and the second insulating layer are also referred to as a gate insulating layer (GI), and the third insulating layer is also referred to as an interlayer Insulating Layer (ILD).
(4) An anode pattern is formed. Forming the anode pattern includes: on the basis of forming the structure, a fourth insulating film is coated, a fourth insulating layer 21 pattern covering the source electrode 19 and the drain electrode 20 is formed in the display area through a mask exposure and development photoetching process, a second through hole is formed in the fourth insulating layer 21, and the drain electrode 20 is exposed through the second through hole. Subsequently, a transparent conductive film is deposited, and the transparent conductive film is patterned through a patterning process to form a pattern of an anode electrode 31 in the display region, and the anode electrode 31 is connected to the drain electrode 20 through a second via hole, as shown in fig. 6. The fourth insulating layer is also called a Planarization Layer (PLN), and the transparent conductive film may be an indium tin oxide ITO or an indium zinc oxide IZO or an ITO/Al (aluminum)/ITO multilayer composite material.
(5) A pixel defining layer, an organic light emitting layer, and a cathode pattern are formed.
Forming the pixel defining layer, the organic light emitting layer and the cathode pattern includes: a Pixel defining film is coated on the substrate on which the aforementioned pattern is formed, a Pixel Defining Layer (PDL)32 is formed in the display region by a photolithography process, and the Pixel defining Layer 32 defines a Pixel opening region exposing the anode electrode 31 at each sub-Pixel, wherein the Pixel defining Layer 32 may be polyimide, acryl, polyethylene terephthalate, or the like.
An organic light emitting material and a cathode metal are sequentially evaporated to form a pattern of an organic light emitting layer 33 and a cathode 34, the organic light emitting layer 33 is connected to the anode 31 in a pixel opening region defined by the pixel defining layer 32, and the cathode 34 is disposed on the organic light emitting layer 33, as shown in fig. 7. The organic light emitting layer 33 mainly includes an emission layer (EML). In practice, the organic light emitting layer 33 may include a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer sequentially disposed to improve efficiency of injecting electrons and holes into the light emitting layer, and the cathode 34 may be made of one of metal materials such as Mg, Ag, Al, Cu, Li, or an alloy thereof.
(6) And forming an encapsulation layer pattern. Forming the encapsulation layer pattern includes: depositing a first inorganic film on the substrate with the pattern to form a first inorganic layer pattern, and then forming an organic layer on the display area by adopting an ink-jet printing mode, wherein the organic layer is only formed on the first inorganic layer of the display area. Finally, a second inorganic thin film is deposited, covering the display area and the non-display area, forming a second inorganic layer pattern, as shown in fig. 8. Thus, the encapsulation layer 38 including an inorganic/organic/inorganic three-layer structure is completed, the middle organic layer is formed only in the display region, and the upper and lower inorganic layers cover the display region and the non-display region. The first inorganic film is, for example, silicon oxynitride (SiON), and the second inorganic film is, for example, silicon nitride (SiNx).
(7) Forming a protective layer pattern.
Forming the protective layer pattern includes: a third inorganic film is deposited and patterned through a patterning process to form a protective layer 39 pattern exposing the IC Bonding Pad and the FPC Bonding Pad and exposing the first voltage lead VSS as shown in fig. 9. The third inorganic film is, for example, silicon nitride (SiNx). The protective layer 39 is used to protect the encapsulation layer 38 and the layers thereunder.
(8) Forming a reflective layer pattern
Forming the reflective layer pattern includes: depositing a reflective layer metal film, patterning the reflective layer metal film through a patterning process to form a pattern of a reflective layer 40 provided with a via hole, wherein the reflective layer 40 is overlapped with the first voltage lead VSS, the via hole exposes a position of the protective layer 39 corresponding to the pixel opening region, and in addition, when the reflective layer 40 is formed, the IC Bonding Pad and the FPC Bonding Pad are also exposed, as shown in fig. 10.
The area ratio of the opening of the reflective layer 40 to the display region of the display substrate is: 10% to 40%, i.e. the area of the orthographic projection of the reflective layer 40 on a plane parallel to the display substrate is 60% to 90% of the area of the display substrate. General end-point pixel aperture ratio of its light emitting layer: 20% to 30% (the aperture ratio of the pixel defining layer of the light-emitting layer), therefore, the opening of the reflective layer 40 may be larger or smaller than the light-emitting region. The reflective layer 40 has a small aperture ratio, which is beneficial to enhancing the mirror effect, but the brightness is lost; the metal reflecting layer has large aperture opening ratio, the mirror effect is weakened, but the brightness is brighter, and basically no loss exists. Thus, the aperture ratio may be selected according to performance requirements. The shape of the opening is not limited, and may be square, circular, a shape conforming to the pixel opening region, or the like, as required.
In one embodiment, the orthographic projection of the reflective layer 40 covers all of the display area of the display substrate except the light emitting areas on a plane parallel to the display substrate, i.e., all of the light emitting areas are exposed.
The material of the reflective layer 40 is, for example, one or a combination of Molybdenum (MO), aluminum (Al), titanium (Ti), Ti/Al/Ti multi-layer composite material, and the like.
(9) Finally, the glass carrier 1 is peeled off to complete the preparation of the display substrate, as shown in fig. 1.
In this embodiment, the reflective layer 40 is disposed outside the light-emitting region, so that direct display in the light-emitting region (pixel opening region) is realized, and total reflection display is realized in the non-light-emitting region through the reflective layer 40, thereby improving the contrast of the display screen.
The preparation process of the embodiment can be realized by utilizing the existing mature preparation equipment, the improvement on the existing process is small, and the preparation process can be well compatible with the existing preparation process, so that the preparation process has the advantages of low manufacturing cost, easiness in process realization, high production efficiency, high yield and the like. The embodiment effectively solves the problem of low contrast caused by total reflection, has practical application value in improving the contrast of the OLED panel, and has good application prospect.
It should be noted that the structure and the manufacturing process thereof shown in this embodiment are only an exemplary illustration. In practical implementation, the corresponding structure can be changed and the patterning process can be increased or decreased according to actual needs. For example, the thin film transistor may have not only a top gate structure but also a bottom gate structure, and may have not only a double gate structure but also a single gate structure. For another example, the thin film transistor may be a Low Temperature Polysilicon (LTPS) thin film transistor or an Indium Gallium Zinc Oxide (IGZO) thin film transistor, and other electrodes, leads, and structural film layers may be further disposed in the driving structure layer and the light emitting structure layer. For another example, the protective layer 39 may not be provided, and so on. For another example, the reflective layer 40 may be disposed in the encapsulation layer 38, such as between an organic layer and a second inorganic layer, and so forth. The embodiments of the present invention are not limited specifically herein.
Second embodiment
Fig. 11 is a schematic structural diagram of a second embodiment of the display substrate of the present invention, illustrating the structure of the display substrate on a plane perpendicular to the display substrate. As shown in fig. 11, the display substrate includes a driving structure layer and a light emitting structure layer disposed on a substrate in a plane perpendicular to the display substrate, the driving structure layer includes a plurality of thin film transistors, and only one light emitting unit and one thin film transistor are illustrated in fig. 12 as an example. Specifically, the substrate includes a first substrate 10a, a second substrate 10b disposed on the first substrate 10a, and a buffer layer 11 disposed on the second substrate 10b, and the driving structure layer mainly includes a thin film transistor 101 disposed on the buffer layer 11. The light emitting structure layer mainly includes an anode 31 connected to the drain electrode of the thin film transistor 101, a reflective layer 40 which is in a same layer as the anode 31 and is an integral structure, a pixel defining layer 32 defining a pixel opening area, an organic light emitting layer 33 disposed in the pixel opening area, a cathode 34 disposed on the organic light emitting layer 33, and an encapsulation layer (not shown in fig. 11) covering the entire substrate. The light emitting region of the light emitting structure layer, i.e., the pixel opening region defined by the pixel defining layer 32, is located outside the orthographic projection of the reflective layer 40. The display substrate may further include a touch layer (not shown in fig. 11) disposed on the encapsulation layer, and the touch layer and the encapsulation layer are attached by an optical adhesive (OCA). In addition, a bottom film (not shown in fig. 11) disposed on a side of the substrate away from the light emitting structure layer and a top film (not shown in fig. 11) covering the touch layer may be further included.
The following further illustrates the technical solution of the embodiment of the present invention through the manufacturing process of the display substrate of this embodiment.
The preparation process of the display substrate comprises the following steps:
(1) forming a substrate pattern, forming an active layer, a gate electrode, a capacitor electrode pattern on the substrate, and forming a source electrode and a drain electrode pattern. Please refer to fig. 3 to 5 in the first embodiment, which are not repeated herein.
(2) An anode and a reflective layer pattern are formed. Forming the anode and reflective layer patterns includes: on the basis of forming the structure, a fourth insulating film is coated, a fourth insulating layer 21 pattern covering the source electrode 19 and the drain electrode 20 is formed in the display area through a mask exposure and development photoetching process, a second through hole is formed in the fourth insulating layer 21, and the drain electrode 20 is exposed through the second through hole. Subsequently, a transparent conductive film is deposited, and the transparent conductive film is patterned through a patterning process to form an anode electrode 31 and a reflective layer 40 pattern in the display region, and the anode electrode 31 is connected to the drain electrode 20 through a second via hole, as shown in fig. 12. The fourth insulating layer is also called a Planarization Layer (PLN), and the transparent conductive film may be an indium tin oxide ITO or an indium zinc oxide IZO or an ITO/Al (aluminum)/ITO multilayer composite material. The reflective layer 40 and the anode 31 may or may not be of an integral structure, and when the reflective layer 40 and the anode 31 form an integral structure, the distance between adjacent integral structures formed by the reflective layer 40 and the anode 31 is less than 10 micrometers, for example, 2 to 5 micrometers (in the related art, the distance between adjacent anodes is 10 micrometers), and in an embodiment, the distance between adjacent integral structures is 3 micrometers. Other values close to 3 μm are also possible. In the solution provided in this embodiment, the anode 31 is extended, and the extended portion is used as the reflective layer 40, so that the process is slightly modified, and the implementation is convenient. As shown by the positions indicated by the two arrows in fig. 13, the pitch of the adjacent integrated structures of the reflective layer 40 and the anode 31 is 3 μm.
(3) A pixel defining layer, an organic light emitting layer, and a cathode pattern are formed.
Forming the pixel defining layer, the organic light emitting layer and the cathode pattern includes: a pixel defining film is coated on the substrate on which the aforementioned pattern is formed, a Pixel Defining Layer (PDL)32 is patterned in the display region by a photolithography process, and the pixel defining layer 32 defines a pixel opening region exposing the anode electrode 31 at each sub-pixel, wherein the pixel defining layer 32 may use high transmittance acryl or the like to increase the anode metal reflectivity.
An organic light emitting material and a cathode metal are sequentially evaporated to form a pattern of an organic light emitting layer 33 and a cathode 34, the organic light emitting layer 33 is connected to the anode 31 in a pixel opening region defined by the pixel defining layer 32, and the cathode 34 is disposed on the organic light emitting layer 33, as shown in fig. 14. The organic light emitting layer 33 mainly includes an emission layer (EML). In practice, the organic light emitting layer 33 may include a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer sequentially disposed to improve efficiency of injecting electrons and holes into the light emitting layer, and the cathode 34 may be made of one of metal materials such as Mg, Ag, Al, Cu, Li, or an alloy thereof.
And forming a packaging layer pattern, and stripping the glass carrier plate 1 to finish the preparation of the display substrate.
The scheme provided by the embodiment has obvious advantages without adding a Mask (Mask). Compared with the common mirror surface LCD technology, the flexible OLED mirror surface display substrate has the advantages of excellent black level, contrast, color gamut, visual angle, flexibility and the like.
It should be noted that the structure and the manufacturing process thereof shown in this embodiment are only an exemplary illustration. In practical implementation, the corresponding structure can be changed and the patterning process can be increased or decreased according to actual needs. For example, the thin film transistor may have not only a top gate structure but also a bottom gate structure, and may have not only a double gate structure but also a single gate structure. For another example, the thin film transistor may be a Low Temperature Polysilicon (LTPS) thin film transistor or an Indium Gallium Zinc Oxide (IGZO) thin film transistor, and other electrodes, leads, and structural film layers may be further disposed in the driving structure layer and the light emitting structure layer.
It should be noted that the reflective layer 40 may be disposed not only in the same layer as the anode 31, but also in other layers, such as in the same layer as the second gate electrode 15, in the same layer as the capacitor electrode 17, and so on.
Third embodiment
Based on the technical concept of the embodiment of the invention, the embodiment of the invention also provides a preparation method of the display substrate. As shown in fig. 15, includes:
sequentially forming an anode layer, a pixel defining layer, an organic light emitting layer, a cathode layer and a packaging layer;
forming a protective layer on the packaging layer by patterning, and exposing the integrated circuit binding region, the flexible circuit board binding region and a first voltage lead;
and patterning the protective layer to form the reflecting layer, exposing the integrated circuit binding region and the flexible circuit board binding region, and overlapping the reflecting layer with the first voltage lead.
In one embodiment, the reflective layer is formed through the same patterning process when the anode in the light emitting structure layer is formed.
In this embodiment, the structure, material, related parameters, and detailed preparation process of each film layer have been described in detail in the foregoing embodiments, and are not described herein again.
The embodiment provides a method for manufacturing a display substrate, which improves the contrast of a display screen by disposing a reflective layer outside a light-emitting region. The preparation method of the embodiment can be realized by utilizing the existing mature preparation equipment, has small improvement on the existing process, and can be well compatible with the existing preparation process, so that the preparation method has the advantages of low manufacturing cost, easiness in process realization, high production efficiency, high yield and the like. The method provided by the embodiment solves the problem of low contrast of the mirror display screen in the related art, and has practical application value and good application prospect.
Fourth embodiment
Based on the technical idea of the embodiment of the invention, the embodiment of the invention further provides a display device, which comprises the display substrate of the embodiment. The display device may be: any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like.
The following points need to be explained:
(1) the drawings of the embodiments of the invention only relate to the structures related to the embodiments of the invention, and other structures can refer to common designs.
(2) The thickness of layers or regions in the figures used to describe embodiments of the invention may be exaggerated or reduced for clarity, i.e., the figures are not drawn on a true scale. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.
(3) Without conflict, embodiments of the present invention and features of the embodiments may be combined with each other to arrive at new embodiments.
Although the embodiments of the present invention have been described above, the above description is only for the convenience of understanding the present invention, and is not intended to limit the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (13)
1. A display substrate, comprising: the display substrate comprises a substrate, a driving structure layer and a light emitting structure layer, wherein the driving structure layer and the light emitting structure layer are stacked on the substrate, a reflecting layer is arranged in the driving structure layer or the light emitting structure layer, and in addition, the orthographic projection of a light emitting area of the light emitting structure layer is at least partially positioned outside the orthographic projection of the reflecting layer on a plane parallel to the display substrate.
2. The display substrate of claim 1, wherein an encapsulation layer is disposed in the light emitting structure layer, and the reflective layer is disposed on a side of the encapsulation layer away from the substrate.
3. The display substrate of claim 2, wherein a protective layer is disposed between the reflective layer and the encapsulation layer.
4. The display substrate according to claim 2, wherein an orthographic projection of the reflective layer covers all of the display area of the display substrate except the light emitting area on a plane parallel to the display substrate.
5. The display substrate according to claim 2, wherein an area of an orthogonal projection of the reflective layer on a plane parallel to the display substrate is 60% to 90% of an area of a display region of the display substrate.
6. The display substrate of any of claims 2 to 5, wherein the reflective layer is made using at least one of: molybdenum, aluminum, titanium/aluminum/titanium multilayer composites.
7. The display substrate of claim 1, wherein an anode layer is disposed in the light emitting structure layer, and the reflective layer is disposed on the same layer as the anode layer.
8. The display substrate of claim 7, wherein the anode layer and the reflective layer are integrally formed, and the distance between adjacent integrally formed anode layers and reflective layers is 2-5 μm.
9. The display substrate according to claim 7 or 8, wherein the light emitting structure layer further comprises a pixel defining layer disposed on the anode layer, the pixel defining layer being made of acryl.
10. A display device comprising the display substrate according to any one of claims 1 to 9.
11. A method for preparing a display substrate is characterized in that,
forming a substrate;
and sequentially forming a driving structure layer and a light-emitting structure layer, wherein the driving structure layer or the light-emitting structure layer comprises a reflecting layer, and the orthographic projection of a light-emitting area of the light-emitting structure layer is at least partially positioned outside the orthographic projection of the reflecting layer on a plane parallel to the display substrate.
12. The method of claim 11, wherein the forming the light emitting structure layer comprises:
sequentially forming an anode layer, a pixel defining layer, an organic light emitting layer, a cathode layer and a packaging layer;
forming a protective layer on the packaging layer by patterning, and exposing the integrated circuit binding region, the flexible circuit board binding region and a first voltage lead;
and patterning the protective layer to form the reflecting layer, exposing the integrated circuit binding region and the flexible circuit board binding region, and overlapping the reflecting layer with the first voltage lead.
13. The method of claim 11, wherein the reflective layer is formed by a same patterning process when the anode in the light emitting structure layer is formed.
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| CN201911056324.6A CN110767841B (en) | 2019-10-31 | Display substrate, preparation method thereof and display device |
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| CN201911056324.6A CN110767841B (en) | 2019-10-31 | Display substrate, preparation method thereof and display device |
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