CN113571667A - Display substrate, preparation method thereof and display device - Google Patents

Display substrate, preparation method thereof and display device Download PDF

Info

Publication number
CN113571667A
CN113571667A CN202110852573.7A CN202110852573A CN113571667A CN 113571667 A CN113571667 A CN 113571667A CN 202110852573 A CN202110852573 A CN 202110852573A CN 113571667 A CN113571667 A CN 113571667A
Authority
CN
China
Prior art keywords
substrate
display
pixel opening
region
orthographic projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202110852573.7A
Other languages
Chinese (zh)
Other versions
CN113571667B (en
Inventor
李晓虎
焦志强
王路
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to CN202110852573.7A priority Critical patent/CN113571667B/en
Publication of CN113571667A publication Critical patent/CN113571667A/en
Application granted granted Critical
Publication of CN113571667B publication Critical patent/CN113571667B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

A display substrate comprises a substrate, a display structure layer and at least one derivation structure, wherein the display structure layer comprises a plurality of pixel opening areas and non-pixel opening areas, the derivation structure comprises a first derivation structure and a second derivation structure, orthographic projection of the first derivation structure is at least partially overlapped with orthographic projection of the at least one pixel opening area, orthographic projection of the second derivation structure is at least partially overlapped with orthographic projection of the non-pixel opening area, and the derivation structure is configured to conduct at least part of light rays incident to the first derivation structure to the second derivation structure and emit the light rays from the non-pixel opening area of the display structure layer to the side close to the substrate. According to the scheme provided by the embodiment, at least part of light rays incident to the pixel opening region are guided out to the non-pixel opening region, support is provided for realizing display and imaging in the same region, and the screen occupation ratio is improved.

Description

Display substrate, preparation method thereof and display device
Technical Field
The present disclosure relates to display technologies, and more particularly, to a display substrate, a method for manufacturing the same, and a display device.
Background
At present, the requirement of the mobile phone on the screen occupation ratio is higher and higher, but the mobile phone needs to be provided with a front camera and a plurality of sensors due to the functional requirements of the mobile phone, so that the screen is provided with holes (such as the middle hole 101 shown in fig. 1) for installing components such as the camera and the light sensor, but the completeness of the screen is damaged, the hole digging area cannot display, and the screen occupation ratio is influenced.
Disclosure of Invention
The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.
The embodiment of the disclosure provides a display substrate, a preparation method thereof and a display device, and the screen ratio is improved.
The embodiment of the present disclosure provides a display substrate, which includes a substrate, a display structure layer disposed on the substrate, and at least one derivation structure disposed on a side of the display structure layer away from the substrate, where the display structure layer includes a plurality of pixel opening regions and a non-pixel opening region surrounding the pixel opening regions, the derivation structure includes a first derivation structure located on a side of the at least one pixel opening region away from the substrate and a second derivation structure located on a side of the non-pixel opening region away from the substrate, a forward projection of the first derivation structure on the substrate at least partially overlaps a forward projection of the at least one pixel opening region on the substrate, a forward projection of the second derivation structure on the substrate and a forward projection of the non-pixel opening region on the substrate at least partially overlap, the leading-out structure is configured to conduct at least part of light rays incident to the first leading-out structure to the second leading-out structure and exit from the non-pixel opening area of the display structure layer close to the substrate side.
In an exemplary embodiment, an orthographic projection of the first lead-out structure on the substrate comprises an orthographic projection of at least one of the pixel opening regions.
In an exemplary embodiment, the light guiding structure includes an optical waveguide film layer and a light output optical structure, which are sequentially disposed on a side of the display structure layer away from the substrate, the optical waveguide film layer includes a first region and a second region surrounding the first region, the first guiding structure includes the optical waveguide film layer located in the first region, the second guiding structure includes the optical waveguide film layer located in the second region and the light output optical structure, and an orthographic projection of the light output optical structure on the substrate does not overlap with an orthographic projection of the optical waveguide film layer located in the first region on the substrate.
In an exemplary embodiment, an orthographic projection of the light output optical structure on a plane parallel to the substrate is annular, and an orthographic projection of the first lead-out structure overlaps a region within an inner ring of the annular shape.
In an exemplary embodiment, an orthographic projection of the light output optical structure is outside an orthographic projection of the plurality of pixel opening regions on a plane parallel to the substrate.
In an exemplary embodiment, the light output optical structure comprises at least one of: a mirror array, a prism array, a lens array, and a reflection grating.
In an exemplary embodiment, the light output optical structure has a refractive index equal to or greater than a refractive index of the second region of the optical waveguide film layer.
In an exemplary embodiment, the first region of the optical waveguide film layer has a refractive index greater than a refractive index of a film layer adjacent to the optical waveguide film layer and located on a side of the optical waveguide film layer adjacent to the substrate.
In an exemplary embodiment, the first and second regions of the optical waveguide film layer have the same refractive index.
An embodiment of the present disclosure provides a display device, including: the display substrate according to any of the above embodiments.
In an exemplary embodiment, the display device further includes a sensor disposed on a side of the substrate away from the display structure layer, a forward projection of the sensor overlaps with a forward projection of the derivation structure, and the derivation structure is configured to conduct at least a part of light incident to the first derivation structure to the second derivation structure and exit from a side of the non-pixel opening region of the display structure layer close to the substrate to the sensor.
The embodiment of the disclosure provides a preparation method of a display substrate, which includes:
forming a display structure layer on a substrate; the display structure layer comprises a plurality of pixel opening areas and a non-pixel opening area surrounding the pixel opening areas;
forming at least one derivation structure on the display structure layer, wherein the derivation structure includes a first derivation structure located on a side of the at least one pixel opening region away from the substrate and a second derivation structure located on a side of the non-pixel opening region away from the substrate, an orthographic projection of the first derivation structure on the substrate at least partially overlaps with an orthographic projection of the at least one pixel opening region on the substrate, an orthographic projection of the second derivation structure on the substrate at least partially overlaps with an orthographic projection of the non-pixel opening region on the substrate, and the derivation structure is configured to conduct at least part of light incident on the first derivation structure to the second derivation structure and emit the light from the non-pixel opening region of the display structure layer close to the substrate side.
The embodiment of the disclosure includes a display substrate, a manufacturing method thereof and a display device, wherein the display substrate includes a substrate, a display structure layer disposed on the substrate, and at least one derivation structure disposed on a side of the display structure layer away from the substrate, the display structure layer includes a plurality of pixel opening regions and a non-pixel opening region surrounding the pixel opening regions, the derivation structure includes a first derivation structure located on a side of the pixel opening region away from the substrate and a second derivation structure located on a side of the non-pixel opening region away from the substrate, an orthographic projection of the first derivation structure on the substrate at least partially overlaps with an orthographic projection of the pixel opening region on the substrate, and an orthographic projection of the second derivation structure on the substrate and an orthographic projection of the non-pixel opening region on the substrate at least partially overlap, the leading-out structure is configured to conduct at least part of light rays incident to the first leading-out structure to the second leading-out structure and exit from the non-pixel opening area of the display structure layer close to the substrate side. According to the scheme provided by the embodiment, at least part of light rays incident to the pixel opening region are guided out to the non-pixel opening region, support is provided for realizing display and imaging in the same region, and the screen occupation ratio is improved.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and drawings.
Other aspects will be apparent upon reading and understanding the attached drawings and detailed description.
Drawings
The accompanying drawings are included to provide a further understanding of the disclosed embodiments and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention.
Fig. 1 is a schematic view of a display substrate according to an embodiment;
FIG. 2 is a schematic plan view of a display substrate provided in accordance with an exemplary embodiment;
FIG. 3 is a schematic cross-sectional view of a display substrate provided in accordance with an exemplary embodiment;
FIG. 4 is a schematic illustration of light transmission provided in an exemplary embodiment;
FIG. 5 is a schematic drawing of a plane of a derived structure provided by an exemplary embodiment;
FIG. 6 is a schematic drawing of a plane of a derived structure provided by another exemplary embodiment;
FIG. 7 is a schematic cross-sectional view of a display structure layer provided in accordance with an exemplary embodiment; and
FIG. 8 is a scanning electron microscope schematic diagram of a light output optical structure provided in an exemplary embodiment.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In the case of conflict, the embodiments of the present disclosure and the features of the embodiments may be arbitrarily combined with each other.
The steps illustrated in the flow charts of the figures may be performed in a computer system such as a set of computer-executable instructions. Also, while a logical order is shown in the flow diagrams, in some cases, the steps shown or described may be performed in an order different than here.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs.
In the drawings, the size of each component, the thickness of layers, or regions may be exaggerated for clarity. Therefore, the embodiments of the present disclosure are not necessarily limited to the dimensions, and the shapes and sizes of the respective components in the drawings do not reflect a true scale. Further, the drawings schematically show ideal examples, and the embodiments of the present disclosure are not limited to the shapes or numerical values shown in the drawings.
The ordinal numbers such as "first", "second", "third", etc., in this disclosure are provided to avoid confusion among the constituent elements, and do not indicate any order, number, or importance.
In the present disclosure, for convenience, terms indicating orientation or positional relationship such as "middle", "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like are used to explain positional relationship of constituent elements with reference to the drawings, only for convenience of description and simplification of description, and do not indicate or imply that the device or element referred to must have a specific orientation, be configured in a specific orientation, and be operated, and thus, should not be construed as limiting the present disclosure. The positional relationship of the components is changed as appropriate in accordance with the direction in which each component is described. Therefore, the words described in the disclosure are not limited thereto, and may be replaced as appropriate.
In this disclosure, the terms "mounted," "connected," and "connected" are to be construed broadly unless otherwise specifically stated or limited. For example, it may be a fixed connection, or a removable connection, or an integral connection; can be a mechanical connection, or an electrical connection; either directly or indirectly through intervening components, or both may be interconnected. The specific meaning of the above terms in the present disclosure can be understood by those of ordinary skill in the art as appropriate.
In the present disclosure, a transistor refers to an element including at least three terminals of a gate electrode, a drain electrode, and a source electrode. The transistor has a channel region between a drain electrode (drain electrode terminal, drain region, or drain electrode) and a source electrode (source electrode terminal, source region, or source electrode), and current can flow through the drain electrode, the channel region, and the source electrode. In the present disclosure, the channel region refers to a region through which current mainly flows.
In the present disclosure, "parallel" means a state in which an angle formed by two straight lines is-10 ° or more and 10 ° or less, and therefore, includes a state in which the angle is-5 ° or more and 5 ° or less. The term "perpendicular" refers to a state in which the angle formed by two straight lines is 80 ° or more and 100 ° or less, and therefore includes a state in which the angle is 85 ° or more and 95 ° or less.
In the present disclosure, "film" and "layer" may be interchanged with one another. For example, the "conductive layer" may be sometimes replaced with a "conductive film". Similarly, the "insulating film" may be replaced with an "insulating layer".
The embodiment of the present disclosure provides a display substrate, which includes a substrate, a display structure layer disposed on the substrate, and at least one guiding structure disposed on a side of the display structure layer away from the substrate, wherein the display structure layer includes a plurality of pixel opening regions and a non-pixel opening region surrounding the pixel opening regions,
the derivation structure comprises a first derivation structure located on the side, away from the substrate, of the at least one pixel opening region and a second derivation structure located on the side, away from the substrate, of the non-pixel opening region, the orthographic projection of the first derivation structure on the substrate at least partially overlaps with the orthographic projection of the at least one pixel opening region on the substrate, the orthographic projection of the second derivation structure on the substrate at least partially overlaps with the orthographic projection of the non-pixel opening region on the substrate, and the derivation structure is configured to conduct at least part of light rays incident to the first derivation structure to the second derivation structure and emit the light rays from the side, close to the substrate, of the non-pixel opening region of the display structure layer.
The display substrate includes a plurality of sub-pixels, each of which includes a pixel opening region. Taking the organic light emitting display substrate as an example, the pixel opening region is a region defined by the pixel defining layer for accommodating the light emitting material.
The display substrate provided by the embodiment can conduct the external incident light from the pixel opening region to the non-pixel opening region through the guiding structure, so that the light can be conducted to the sensor located on the side of the substrate far away from the display structure layer, such as an image sensor and a light sensor. According to the scheme provided by the embodiment, light rays in the pixel opening area can be conducted to the non-pixel opening area and then reach the sensor, the situation that the external light rays are transmitted to the sensor only through transparency is avoided, display and imaging are supported for the same area, the screen occupation ratio is improved, and the full-face screen is realized.
In an exemplary embodiment, the display substrate may be an Organic Light Emitting Diode (OLED), a Quantum-dot Light Emitting Diode (QLED), or a mini Light Emitting Diode (MiniLED), a micro Light Emitting Diode (micro led) display substrate.
In an exemplary embodiment, the display structure layer may include: the light emitting device comprises a driving structure layer, a light emitting structure layer and an encapsulation layer. The driving structure layer may include a plurality of thin film transistors, and the light emitting structure layer may include an anode, a pixel defining layer, a light emitting layer, and a cathode. The encapsulation layer may include a three-layer encapsulation structure, two inorganic encapsulation layers, and an organic encapsulation layer between the two inorganic encapsulation layers.
In an exemplary embodiment, an orthographic projection of the first lead-out structure on the substrate comprises an orthographic projection of at least one of the pixel opening regions.
In an exemplary embodiment, the light guiding structure includes an optical waveguide film layer and a light output optical structure, which are sequentially disposed on a side of the display structure layer away from the substrate, the optical waveguide film layer includes a first region and a second region surrounding the first region, the first guiding structure includes the optical waveguide film layer located in the first region, the second guiding structure includes the optical waveguide film layer located in the second region and the light output optical structure, and an orthographic projection of the light output optical structure on the substrate does not overlap with an orthographic projection of the optical waveguide film layer located in the first region on the substrate.
Along with the development of the comprehensive screen technology, the camera technology under the screen places the camera below the display screen, and meanwhile, the display screen in the camera area can still display, so that the comprehensive screen display technology is truly. Fig. 2 is a schematic plan view of a display substrate according to an embodiment of the disclosure. As shown in fig. 2, in a plane parallel to the base, embodiments of the present disclosure provide that the Display substrate includes a Display area 50 including an Under Display Camera (UDC) area 51. Only one under-screen camera region is shown in fig. 2, but implementations of the disclosure are not so limited and one or more under-screen camera regions may be provided. An image sensor can be arranged outside the display substrate, and on a plane parallel to the substrate, the orthographic projection of the under-screen camera area and the orthographic projection of the image sensor are overlapped. One or more of the lead-out structures may be provided in the area of the sub-screen camera. According to the scheme provided by the embodiment, imaging and displaying in the same area are realized by arranging the leading-out structure, and the screen ratio is improved.
In an exemplary embodiment, the display area 50 may further include other sensor areas (such as an infrared sensor area, etc.), and one or more of the deriving structures may be disposed in the sensor area. The lead-out structure may not be provided in a non-sensor area of the display area.
Fig. 3 is a schematic cross-sectional view of a display substrate according to an exemplary embodiment. As shown in fig. 3, the display substrate provided in this embodiment includes a plurality of pixel opening regions a1, and in a direction perpendicular to the substrate 10, the display substrate may include: the display structure layer 100 may include a fan-out electrode 11 disposed on the substrate 10, a buffer layer 12 disposed on a side of the fan-out electrode 11 away from the substrate 10, an active layer 13 disposed on a side of the buffer layer 12 away from the substrate 10, a first insulating layer 14 disposed on a side of the active layer 13 away from the substrate 10, a first gate electrode 15 and a connecting electrode 16 disposed on a side of the first insulating layer 14 away from the substrate 10, the connecting electrode 16 being connected to the fan-out electrode 11 through a via hole, a second insulating layer 17 disposed on a side of the first gate electrode 15 and the connecting electrode 16 away from the substrate 10, a capacitor electrode 18 disposed on a side of the second insulating layer 17 away from the substrate 10, and a third insulating layer 19 disposed on a side of the capacitor electrode 18 away from the substrate, a source electrode 20 and a drain electrode 21 disposed on a side of the third insulating layer 19 remote from the substrate, the source electrode 20 electrically connects the active layer 13 and the connection electrode 16 through a via hole, the drain electrode 21 is electrically connected to the active layer 13 through a via hole, a fourth insulating layer 22 disposed on a side of the source electrode 20 and the drain electrode 21 away from the substrate, an anode 23 disposed on a side of the fourth insulating layer 22 away from the substrate, the anode 23 is electrically connected to the drain electrode 21 through a via hole, a pixel defining layer 24 disposed on a side of the anode 23 away from the substrate 10, an organic light emitting layer 25 disposed on a side of the pixel defining layer 24 away from the substrate 10, a cathode 26 disposed on a side of the organic light emitting layer 25 away from the substrate 10, and a first encapsulating layer 27, a second encapsulating layer 28 and a third encapsulating layer 29 sequentially disposed on a side of the cathode 26 away from the substrate 10. The lead-out structure 200 may include an optical waveguide film layer 30 and a light output optical structure 31 sequentially disposed on a side of the third encapsulation layer 29 away from the substrate 10. The pixel defining layer 24 defines a pixel opening area exposing the anode electrode 23. The optical waveguide film layer 30 includes a first region B1 and a second region B2 surrounding the first region B1, and an orthogonal projection of the light output optical structure 31 may not overlap an orthogonal projection of the optical waveguide film layer 30 on the substrate at the first region B1 on a plane parallel to the substrate 10. The optical waveguide film layer 30 is configured to guide at least a part of the light incident to the first region B1 from the side of the optical waveguide film layer 30 away from the substrate 10 to the light output optical structure 31, and the light output optical structure 31 is configured to reflect at least a part of the light incident from the optical waveguide film layer 30 to the non-pixel opening region of the display structure layer and exit from the side of the non-pixel opening region of the display structure layer 100 close to the substrate 10. The first lead-out structure comprises the optical waveguide film layer 30 at the first region B1, and the second lead-out structure comprises the optical waveguide film layer 30 and a light output optical structure 31 at the second region B2.
As shown in fig. 4, the external light enters the first region B1 of the optical waveguide film layer 30, and enters the light output optical structure 31 after being reflected for multiple times in the first region B1, and the light output optical structure 31 reflects the light from the optical waveguide film layer 30 and enters the image sensor 300 through the non-pixel opening region of the display structure layer 100, so that image formation and display can be realized in the same region. The light incident on the optical waveguide film 30 within a certain angle range may be totally reflected in the second region of the optical waveguide film 30 until entering the light output optical structure 31, and reflected by the light output optical structure 31 to the non-pixel opening region of the display structure layer.
In an exemplary embodiment, an orthogonal projection of the first region B1 on a plane parallel to the substrate 10 includes at least one of the pixel opening regions. In the embodiment, the light-guiding structure may guide the external light incident on the pixel opening region included in the first region B1 to the non-pixel opening region.
In an exemplary embodiment, an orthographic projection of the light output optical structure 31 may be outside an orthographic projection of the plurality of pixel opening regions on a plane parallel to the substrate 10. The light output optical structure 31 is located outside the orthographic projection of the pixel opening region, so that the light reflected by the light output optical structure 31 can be prevented from being shielded by the film layer of the pixel opening region of the display structure layer 100, and the intensity of the reflected light is improved.
In an exemplary embodiment, the orthographic projection of the light output optical structure 31 may be annular in shape in a plane parallel to the substrate 10, the orthographic projection of the first lead-out structure overlapping an area within the inner ring of the annular shape. For example, the region within the inner ring of the ring shape may comprise an orthographic projection of the first lead-out structure. The ring shape may be a closed ring shape. The ring shape may be a circular ring, a square ring, or an irregular ring, etc. The annular light output optical structure can collect light as much as possible, and the strength of the guided light is improved. In the embodiment, the light output optical structure 31 collects light from the pixel opening region in the ring and transmits the collected light to the non-pixel opening region. The disclosed embodiments are not so limited and the orthographic projection of the light output optical structure 31 may not be annular.
In an exemplary embodiment, one or more pixel opening regions may be included within the ring of orthographic projections of the light output optical structure 31. I.e. UDC areas, there may be one derived structure for each sub-pixel, or one derived structure for a plurality of sub-pixels. As shown in fig. 5, the display structure layer may include a red sub-pixel R, a green sub-pixel G and a blue sub-pixel B, and the ring formed by the orthographic projection of the light output optical structure 31 may include a pixel opening region of one red sub-pixel R, or may include pixel opening regions of two green sub-pixels G, or may include a pixel opening region of one blue sub-pixel B. As shown in fig. 6, the orthographic projection of the light output optical structure 31 may comprise one red sub-pixel R and two green sub-pixels G in a ring, or may comprise one red sub-pixel R, four green sub-pixels G and one blue sub-pixel B, etc. Here, by way of example only, more pixel opening areas may be included within the ring formed by the orthographic projection of the light output optical structure 31. Light incident into the annulus is conducted by the optical waveguide film layer 30 to the light output optical structure 31 and reflected to the sensor.
In an exemplary embodiment, the refractive index of the first region B1 of the optical waveguide film layer 30 may be greater than the refractive index of a film layer adjacent to the optical waveguide film layer 30 and located on a side of the optical waveguide film layer 30 close to the substrate 10. In this embodiment, the film adjacent to the optical waveguide film 30 and located on the side close to the substrate is the third encapsulation layer 29, and the refractive index of the first region B1 of the optical waveguide film 30 may be greater than the refractive index of the third encapsulation layer 29. In the solution provided in this embodiment, when the incident angle of the light is larger than a certain angle, the light is totally reflected at the optical waveguide film 30, so that the light is limited in the optical waveguide film 30, and enters the optical output structure 31 after being totally reflected for multiple times.
In an exemplary embodiment, the refractive index of the light output optical structure 31 may be greater than or equal to the refractive index of the second region B2 of the optical waveguide film layer 30. The solution provided in this embodiment can avoid total reflection of the light entering the light output optical structure 31 from the optical waveguide film layer 30, and increase the light entering the light output optical structure 31. The light may be reflected at the output optical structure 31 by total reflection to the display structure layer.
In an exemplary embodiment, the refractive index of the first region B1 and the refractive index of the second region B2 of the optical waveguide film layer 30 may be the same or different. The refractive indexes of the first region B1 and the second region B2 are the same, so that light can be prevented from being refracted when entering the second region B2 from the first region B1.
In an exemplary embodiment, when a plurality of lead-out structures 200 are present, the optical waveguide film layers 30 of the plurality of lead-out structures 200 may be continuous or separated from each other. That is, the optical waveguide film layer 30 of the plurality of lead-out structures 200 may be one continuous film layer covering the UDC region, or one optical waveguide film layer 30 may be provided separately for each lead-out structure 200, as shown in fig. 5, or the optical waveguide film layers 30 of the plurality of lead-out structures 200 may be continuous, the optical waveguide film layers 30 of the plurality of lead-out structures 200 are separated from each other, or the like.
In an exemplary embodiment, the light output optical structure 31 may include, but is not limited to, at least one of a mirror array, a prism array, a lens array, and a reflective grating. The prism may be a triangular prism. The lens may be a convex lens or a concave lens. As shown in fig. 3, the light output optical structure includes a prism array of a plurality of triangular prisms.
In an exemplary embodiment, the material of the optical waveguide film layer 30 may be an inorganic material, such as silicon nitride (SiNx) or silicon oxide (SiOx) or silicon oxynitride (SiOxNx), or an organic material, such as Polyimide (PI), polyethylene terephthalate (PET)
In an exemplary embodiment, the light output optical structure 31 may be fabricated using, but is not limited to, silicon nitride (SiNx) or silicon oxide (SiOx) or silicon oxynitride SiOxNx, etc.
In an exemplary embodiment, additional film layers may be disposed between the third encapsulation layer 29 and the optical waveguide film layer 30.
In an exemplary embodiment, the side of the guiding structure away from the substrate may be provided with other film layers, for example, a touch control structure layer may be provided. At this time, the refractive index of the optical waveguide film layer 30 in the first region B1 is greater than the refractive index of the film layer adjacent to the optical waveguide film layer 30 and located on the side of the optical waveguide film layer 30 away from the substrate 10.
In an exemplary embodiment, the substrate 10 may be a flexible substrate such as Polyimide (PI), polyethylene terephthalate (PET), or a surface-treated polymer film, or a rigid substrate.
In an exemplary embodiment, the fan-out electrode 11 and the anode 23 may be transparent electrodes, and may be made of Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), or the like.
In an exemplary embodiment, the buffer layer 12, the first insulating layer 14, the second insulating layer 17, and the third insulating layer 19 may be made of silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiOxNx), or the like, and may be a single layer or a multilayer structure of silicon nitride/silicon oxide. The fourth insulating layer 22 may be made of an organic material.
In an exemplary embodiment, the connection electrode 16, the gate electrode 15, the capacitor electrode 18, the source electrode 20, and the drain electrode 21 may be made of a metal material, such as any one or more of silver (Ag), copper (Cu), aluminum (Al), titanium (Ti), and molybdenum (Mo), or an alloy material of the above metals, such as aluminum neodymium alloy (AlNd) or molybdenum niobium alloy (MoNb), and may have a single-layer structure or a multi-layer composite structure, such as Ti/Al/Ti, and the like. The cathode 26 may employ any one or more of magnesium (Mg), silver (Ag), aluminum (Al), copper (Cu), and lithium (Li), or an alloy made of any one or more of the above metals.
In an exemplary embodiment, the first and third encapsulation layers 27 and 29 may be made of an inorganic material, such as silicon nitride (SiNx) or silicon oxide (SiOx) or silicon oxynitride (SiOxNx), etc., and the second encapsulation layer 28 may be made of an organic material, such as Polyimide (PI), polyethylene terephthalate (PET), etc.
In an exemplary embodiment, the pixel defining layer 24 may be made of polyimide, acryl, polyethylene terephthalate, or the like.
The display structure layer structure shown in fig. 3 is only an example, and the embodiments of the present disclosure are not limited thereto, and the display structure layer may be other structures.
The following further illustrates the technical solution of this embodiment through the manufacturing process of the display substrate of this embodiment. The "patterning process" in this embodiment includes processes of depositing a film, coating a photoresist, exposing a mask, developing, etching, and stripping the photoresist, and is a well-established manufacturing process in the related art. The "photolithography process" referred to in this embodiment includes coating film coating, mask exposure, and development, and is a well-established production process in the related art. The deposition may be performed by a known process such as sputtering, evaporation, chemical vapor deposition, etc., the coating may be performed by a known coating process, and the etching may be performed by a known method, which is not particularly limited herein. In the description of the present embodiment, it is to be understood that "thin film" refers to a layer of a material deposited or coated on a substrate. The "thin film" may also be referred to as a "layer" if it does not require a patterning process or a photolithography process throughout the fabrication process. If a patterning process or a photolithography process is required for the "thin film" in the entire manufacturing process, the "thin film" is referred to as a "thin film" before the patterning process, and the "layer" after the patterning process. The "layer" after the patterning process or the photolithography process includes at least one "pattern". Wherein, the element to be detected is exemplified by a Micro LED.
The embodiment of the disclosure provides a preparation method of a display substrate, which includes:
forming a display structure layer on a substrate; the display structure layer comprises a plurality of pixel opening areas and a non-pixel opening area surrounding the pixel opening areas;
forming at least one derivation structure on the display structure layer, wherein the derivation structure includes a first derivation structure located on a side of the at least one pixel opening region away from the substrate and a second derivation structure located on a side of the non-pixel opening region away from the substrate, an orthographic projection of the first derivation structure on the substrate at least partially overlaps with an orthographic projection of the at least one pixel opening region on the substrate, an orthographic projection of the second derivation structure on the substrate at least partially overlaps with an orthographic projection of the non-pixel opening region on the substrate, and the derivation structure is configured to conduct at least part of light incident on the first derivation structure to the second derivation structure and emit the light from the non-pixel opening region of the display structure layer close to the substrate side.
In an exemplary embodiment, the forming of the display structure layer on the substrate may include:
depositing a first metal film on a substrate, and patterning the first metal film through a patterning process to form a fan-out electrode 11;
depositing a buffer layer film on the substrate on which the patterns are formed, and forming a buffer layer 12 through a composition process;
depositing an active layer film on the substrate on which the patterns are formed, and forming active layer 13 patterns through a composition process;
sequentially depositing a first insulating film and a second metal film on the substrate on which the patterns are formed, patterning the second metal film through a patterning process to form a first insulating layer 14 covering the active layer 13, a first gate electrode 15 and a connecting electrode 16, wherein the first gate electrode 15 and the connecting electrode 16 are arranged on the first insulating layer 14, and the connecting electrode 16 is connected with the fan-out electrode 11 through a via hole;
depositing a second insulating film and a third metal film in sequence, and patterning the third metal film through a patterning process to form a second insulating layer 17 covering the first gate electrode 15 and a capacitor electrode 18 pattern arranged on the second insulating layer 17;
depositing a third insulating film, and patterning the third insulating film through a patterning process to form a third insulating layer 19 pattern provided with a via hole;
depositing a fourth metal film, and patterning the fourth metal film through a patterning process to form a source electrode 20 and a drain electrode 21;
and coating a fourth insulating film, forming a fourth insulating layer 22 pattern covering the source electrode 20 and the drain electrode 21 by a mask exposure and development photolithography process, wherein the fourth insulating layer 22 is provided with a via hole to expose the drain electrode 21. Depositing a transparent conductive film, patterning the transparent conductive film through a patterning process to form an anode 23 pattern, wherein the anode 23 is connected with the drain electrode 21 through a via hole;
coating a pixel definition film on the substrate with the patterns, and forming the patterns of the pixel definition layer 24 by a photoetching process;
depositing organic luminescent material and cathode metal on the substrate with the pattern to form organic luminescent layer 25 and cathode 26 pattern;
depositing a first inorganic film on the substrate with the pattern to form a pattern of a first packaging layer 27; forming a second packaging layer 28 pattern by adopting an ink-jet printing mode; a second inorganic thin film is deposited to pattern a third encapsulation layer 29 as shown in fig. 7.
In an exemplary embodiment, forming at least one export structure on the display structure layer comprises:
attaching a lead-out structure to the display structure layer;
or,
coating an optical waveguide film layer film on the substrate with the display structure layer, and forming an optical waveguide film layer 30 pattern through a mask, exposure and development process; or, depositing an optical waveguide film layer film on the substrate with the display structure layer, and forming an optical waveguide film layer 30 pattern through a composition process; the optical waveguide film layer film may be an organic material such as PI, PET, or the like, or may be an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx) or silicon oxynitride (SiOxNx) or the like.
On the substrate on which the aforementioned pattern is formed, a light output optical structure film is deposited and patterned by a patterning process to form a pattern of light output optical structures 31. The light output optical structure film may be an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx) or silicon oxynitride (SiOxNx) or the like. Fig. 8 is a Scanning Electron Microscope (SEM) image of the light output optical structure 31. As shown in fig. 8, the light output optical structure 31 may be a prism array.
In an exemplary embodiment, the light output optical structure 31 may be fabricated using an embossing process.
An embodiment of the present disclosure provides a display device, including the display substrate according to any one of the above embodiments.
In an exemplary embodiment, the display device further includes a sensor disposed on a side of the substrate away from the display structure layer, a forward projection of the sensor overlaps with a forward projection of the derivation structure, and the derivation structure is configured to conduct at least a part of light incident to the first derivation structure to the second derivation structure and exit from a side of the non-pixel opening region of the display structure layer close to the substrate to the sensor.
In an exemplary embodiment, the sensor includes, but is not limited to, at least one of: image sensors, light sensors, etc.
The display device may be: any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like.
Although the embodiments of the present invention have been described above, the above description is only for the convenience of understanding the present invention, and is not intended to limit the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (12)

1. A display substrate is characterized in that the display substrate comprises a substrate, a display structure layer arranged on the substrate and at least one derivation structure arranged on the side of the display structure layer far away from the substrate, the display structure layer comprises a plurality of pixel opening areas and a non-pixel opening area surrounding the pixel opening areas, the derivation structure comprises a first derivation structure positioned on the side of the pixel opening area far away from the substrate and a second derivation structure positioned on the side of the non-pixel opening area far away from the substrate, the orthographic projection of the first derivation structure on the substrate at least partially overlaps with the orthographic projection of the at least one pixel opening area on the substrate, the orthographic projection of the second derivation structure on the substrate and the orthographic projection of the non-pixel opening area on the substrate at least partially overlap, the leading-out structure is configured to conduct at least part of light rays incident to the first leading-out structure to the second leading-out structure and exit from the non-pixel opening area of the display structure layer close to the substrate side.
2. The display substrate of claim 1, wherein an orthographic projection of the first deriving structure on the substrate comprises an orthographic projection of at least one of the pixel opening regions.
3. The display substrate according to claim 1, wherein the light guiding structure comprises a light waveguide film layer and a light output optical structure sequentially disposed on a side of the display structure layer away from the substrate, the light waveguide film layer comprises a first region and a second region surrounding the first region, the first light guiding structure comprises the light waveguide film layer located in the first region, the second light guiding structure comprises the light waveguide film layer located in the second region and the light output optical structure, and an orthographic projection of the light output optical structure on the substrate does not overlap with an orthographic projection of the light waveguide film layer located in the first region on the substrate.
4. A display substrate according to claim 3, wherein the orthographic projection of the light output optical structure is annular in shape in a plane parallel to the base, and wherein the orthographic projection of the first derivation structure overlaps with an area within the inner annulus of the annular shape.
5. A display substrate according to claim 3, wherein an orthographic projection of the light output optical structure is outside an orthographic projection of the plurality of pixel opening regions in a plane parallel to the base.
6. A display substrate according to claim 3, wherein the light output optical structure comprises at least one of: a mirror array, a prism array, a lens array, and a reflection grating.
7. A display substrate according to claim 3, wherein the light output optical structure has a refractive index equal to or greater than the refractive index of the second region of the optical waveguide film layer.
8. The display substrate of claim 3, wherein the first region of the optical waveguide film layer has a refractive index greater than a refractive index of a film layer adjacent to the optical waveguide film layer and on a side of the optical waveguide film layer adjacent to the substrate.
9. The display substrate according to any one of claims 3 to 8, wherein the first region and the second region of the optical waveguide film layer have the same refractive index.
10. A display device, comprising: a display substrate as claimed in any one of claims 1 to 9.
11. The display device according to claim 10, further comprising a sensor disposed on a side of the substrate away from the display structure layer, wherein an orthographic projection of the sensor overlaps with an orthographic projection of the derivation structure, and wherein the derivation structure is configured to guide at least a portion of the light incident on the first derivation structure to the second derivation structure and exit from a non-pixel opening region of the display structure layer to the sensor near the side of the substrate.
12. A method for preparing a display substrate is characterized by comprising the following steps:
forming a display structure layer on a substrate; the display structure layer comprises a plurality of pixel opening areas and a non-pixel opening area surrounding the pixel opening areas;
forming at least one derivation structure on the display structure layer, wherein the derivation structure includes a first derivation structure located on a side of the at least one pixel opening region away from the substrate and a second derivation structure located on a side of the non-pixel opening region away from the substrate, an orthographic projection of the first derivation structure on the substrate at least partially overlaps with an orthographic projection of the at least one pixel opening region on the substrate, an orthographic projection of the second derivation structure on the substrate at least partially overlaps with an orthographic projection of the non-pixel opening region on the substrate, and the derivation structure is configured to conduct at least part of light incident on the first derivation structure to the second derivation structure and emit the light from the non-pixel opening region of the display structure layer close to the substrate side.
CN202110852573.7A 2021-07-27 2021-07-27 Display substrate, preparation method thereof and display device Active CN113571667B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110852573.7A CN113571667B (en) 2021-07-27 2021-07-27 Display substrate, preparation method thereof and display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110852573.7A CN113571667B (en) 2021-07-27 2021-07-27 Display substrate, preparation method thereof and display device

Publications (2)

Publication Number Publication Date
CN113571667A true CN113571667A (en) 2021-10-29
CN113571667B CN113571667B (en) 2023-04-28

Family

ID=78168118

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110852573.7A Active CN113571667B (en) 2021-07-27 2021-07-27 Display substrate, preparation method thereof and display device

Country Status (1)

Country Link
CN (1) CN113571667B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114068843A (en) * 2021-11-05 2022-02-18 湖北长江新型显示产业创新中心有限公司 Display panel and display device

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010020237A (en) * 2008-07-14 2010-01-28 Sony Corp Image detection display apparatus and electronic equipment
CN110767841A (en) * 2019-10-31 2020-02-07 京东方科技集团股份有限公司 Display substrate, preparation method thereof and display device
CN111106155A (en) * 2019-12-30 2020-05-05 武汉天马微电子有限公司 Display panel and display device
CN111430445A (en) * 2020-05-09 2020-07-17 京东方科技集团股份有限公司 Display substrate, preparation method thereof and display device
CN112103323A (en) * 2020-09-22 2020-12-18 京东方科技集团股份有限公司 Display panel, manufacturing method thereof and display device
US20210005840A1 (en) * 2019-07-04 2021-01-07 Chengdu Boe Optoelectronics Technology Co., Ltd. Display substrate, method for manufacturing the same and display device
CN112420959A (en) * 2020-11-19 2021-02-26 京东方科技集团股份有限公司 Organic light-emitting display substrate, manufacturing method thereof, display panel and display device
CN112436098A (en) * 2020-11-20 2021-03-02 京东方科技集团股份有限公司 Display panel, display device and manufacturing method of display panel
CN112909204A (en) * 2021-02-02 2021-06-04 武汉华星光电半导体显示技术有限公司 Display panel, manufacturing method thereof and display device
CN112928225A (en) * 2021-01-26 2021-06-08 京东方科技集团股份有限公司 Display substrate and display device
CN113078199A (en) * 2021-03-29 2021-07-06 昆山国显光电有限公司 Display substrate, preparation method of display substrate and display module

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010020237A (en) * 2008-07-14 2010-01-28 Sony Corp Image detection display apparatus and electronic equipment
US20210005840A1 (en) * 2019-07-04 2021-01-07 Chengdu Boe Optoelectronics Technology Co., Ltd. Display substrate, method for manufacturing the same and display device
CN110767841A (en) * 2019-10-31 2020-02-07 京东方科技集团股份有限公司 Display substrate, preparation method thereof and display device
CN111106155A (en) * 2019-12-30 2020-05-05 武汉天马微电子有限公司 Display panel and display device
CN111430445A (en) * 2020-05-09 2020-07-17 京东方科技集团股份有限公司 Display substrate, preparation method thereof and display device
CN112103323A (en) * 2020-09-22 2020-12-18 京东方科技集团股份有限公司 Display panel, manufacturing method thereof and display device
CN112420959A (en) * 2020-11-19 2021-02-26 京东方科技集团股份有限公司 Organic light-emitting display substrate, manufacturing method thereof, display panel and display device
CN112436098A (en) * 2020-11-20 2021-03-02 京东方科技集团股份有限公司 Display panel, display device and manufacturing method of display panel
CN112928225A (en) * 2021-01-26 2021-06-08 京东方科技集团股份有限公司 Display substrate and display device
CN112909204A (en) * 2021-02-02 2021-06-04 武汉华星光电半导体显示技术有限公司 Display panel, manufacturing method thereof and display device
CN113078199A (en) * 2021-03-29 2021-07-06 昆山国显光电有限公司 Display substrate, preparation method of display substrate and display module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114068843A (en) * 2021-11-05 2022-02-18 湖北长江新型显示产业创新中心有限公司 Display panel and display device
CN114068843B (en) * 2021-11-05 2023-12-22 湖北长江新型显示产业创新中心有限公司 Display panel and display device

Also Published As

Publication number Publication date
CN113571667B (en) 2023-04-28

Similar Documents

Publication Publication Date Title
US10319792B2 (en) Display device
CN113113454B (en) Display panel and display device
JP6807178B2 (en) Display device, manufacturing method of display device
US20150115293A1 (en) Light emitting diode display panel
CN112928225B (en) Display substrate and display device
EP4053901A1 (en) Display substrate, preparation method therefor, and display device
CN112616321B (en) Display substrate, manufacturing method thereof and display device
CN111799311B (en) Display substrate, preparation method thereof and display device
CN115768197B (en) Display substrate, preparation method thereof and display device
US20210014393A1 (en) Light emitting device, exposure system, imaging display device, imaging device, electronic device, and lighting device
CN116828919B (en) Display panel, manufacturing method thereof and display device
US20230012412A1 (en) Display substrate and method of manufacturing the same, and display device
JP2013251173A (en) Display device manufacturing method and display device
CN218447107U (en) Display substrate and display device
JP2021136208A (en) Light emitting device, display device, exposure system, and display imaging device
CN114639713A (en) Display panel and display device
US11616215B2 (en) Display apparatus
CN113571667B (en) Display substrate, preparation method thereof and display device
KR20220036437A (en) Display device
CN115552615A (en) Display substrate, preparation method thereof and display device
CN113707673B (en) Display substrate, preparation method thereof and display device
CN220326166U (en) Display substrate and display device
CN218831234U (en) Display device
US20220271098A1 (en) Display Panel, Manufacturing Method Thereof, and Display Apparatus
CN116709862A (en) Display panel and display device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant