CN113078199A - Display substrate, preparation method of display substrate and display module - Google Patents
Display substrate, preparation method of display substrate and display module Download PDFInfo
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- CN113078199A CN113078199A CN202110333809.6A CN202110333809A CN113078199A CN 113078199 A CN113078199 A CN 113078199A CN 202110333809 A CN202110333809 A CN 202110333809A CN 113078199 A CN113078199 A CN 113078199A
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
- H10K59/65—OLEDs integrated with inorganic image sensors
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Abstract
The embodiment of the application provides a display substrate, a preparation method of the display substrate and a display module. The display substrate is provided with a plurality of sub-pixels distributed in an array, and comprises: the light emitting device comprises a substrate, a driving device, a light emitting device layer and a luminous flux gain structure. And in the sub-pixel circuit area, the orthographic projection of the luminous flux gain structure on the transparent substrate layer and the orthographic projection dislocation distribution of the functional layers on the transparent substrate layer are distributed, and the orthographic projection of the luminous flux gain structure on the transparent substrate layer and the orthographic projection dislocation distribution of the first electrode layer on the transparent substrate layer are distributed. Light incident into the display substrate from an external environment exits the display substrate from the back side of the display substrate opposite to the light exit side through the luminous flux gain structure, and the light transmittance of the display area of the display substrate is improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display substrate, a preparation method of the display substrate and a display module.
Background
Since the Organic Light-Emitting Diode (OLED) display substrate has the advantages of high image quality, power saving, thin body, and wide application range, it is widely used in various consumer electronic products such as mobile phones, televisions, personal digital assistants, digital cameras, notebook computers, and desktop computers.
However, the light transmittance of the display area of the general display substrate is low, and the requirement of the photosensitive module under the screen, which is set corresponding to the display area, on the light transmittance cannot be met, so that the photosensitive process and the quality of the photosensitive module under the screen are affected, and the application performance of the photosensitive module under the screen is further affected.
Therefore, a display substrate, a method for manufacturing the display substrate, and a display module are urgently needed.
Disclosure of Invention
A first aspect of an embodiment of the present application provides a display substrate having a plurality of light emitting elements distributed in an array, the display substrate including:
a substrate comprising a transparent substrate layer;
the driver device layer is arranged on one side of the substrate and comprises a plurality of signal lines distributed in rows and columns, the row signal lines and the column signal lines are crossed to define a plurality of sub-pixel circuit areas, each sub-pixel circuit area is provided with a pixel circuit, and each pixel circuit comprises a plurality of functional layers which are insulated from each other through interlayer insulating layers;
the light-emitting device layer is arranged on one side, back to the substrate, of the driving device layer and comprises a plurality of sub-pixels distributed in an array mode, and each sub-pixel is correspondingly connected with each pixel circuit to form a light-emitting component; the sub-pixel comprises a first electrode layer, a light-emitting layer and a second electrode layer which are arranged in a stacked mode;
and in the sub-pixel circuit area, the orthographic projection of the luminous flux gain structure on the transparent substrate layer and the orthographic projection dislocation distribution of the functional layers on the transparent substrate layer are distributed, and the orthographic projection of the luminous flux gain structure on the transparent substrate layer and the orthographic projection dislocation distribution of the first electrode layer on the transparent substrate layer are distributed.
Through set up luminous flux gain structure in sub-pixel circuit region, the light that incides display substrate from external environment goes into the dorsal part outgoing display substrate that the display substrate carried on the back with the light-emitting side from the display substrate through luminous flux gain structure, the insulating layer has been avoided among the display substrate to the hindrance of light propagation, the light transmissivity that the display substrate distributes and has light-emitting component's display area has been improved, the sensitization process and the sensitization quality of sensitization module under the screen that the improvement set up in the dorsal part of display substrate, and then optimize the application property of sensitization module under the screen.
A second aspect of an embodiment of the present application provides a method for manufacturing a display substrate, including:
the array substrate mother board comprises a transparent substrate layer and a driver device layer which are arranged in a stacked mode, wherein the driver device layer comprises a plurality of signal lines which are distributed in rows and columns, a plurality of sub-pixel circuit areas are defined by the line signal lines and the column signal lines in a crossed mode, pixel circuits are arranged corresponding to the sub-pixel circuit areas, and each pixel circuit comprises a plurality of functional layers which are arranged in an insulated mode through interlayer insulating layers;
patterning the array substrate motherboard to form holes in at least part of the sub-pixel circuit regions, wherein the holes penetrate at least to the surface of the transparent substrate layer adjacent to the driving device layer;
the holes are filled with a light transmissive material to form a light flux gain structure.
The display area of the display substrate obtained by the preparation method of the display substrate provided by the second aspect of the embodiment of the application has larger light transmittance, and the practical application of the under-screen photosensitive module correspondingly arranged with the display area of the display substrate is facilitated.
The third aspect of the embodiment of the application provides a display module assembly, and the display module assembly includes: in the display substrate in the first aspect of the embodiment of the present application, the display substrate has a light exit side and a back side opposite to the light exit side; and the under-screen functional module is arranged on the back side of the display substrate and is arranged corresponding to the sub-pixel area with the luminous flux gain structure.
The sub-pixel circuit area of the display substrate in the display module that the third aspect of this application embodiment provided has luminous flux gain structure, has increased the luminousness in display substrate display area, improves the sensitization quality of function module under the screen, does benefit to the practical application of function module under the screen.
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Other features, objects and advantages of the invention will become apparent from the following detailed description of non-limiting embodiments thereof, when read in conjunction with the accompanying drawings, in which like reference characters designate the same or similar parts throughout the figures thereof, and which are not to scale.
FIG. 1 is a schematic top view of a display substrate according to an embodiment of the present disclosure;
FIG. 2 is a simplified diagram of a portion of the structure of a portion of the display area of FIG. 1;
FIG. 3 is a top view of a light emitting device layer in an embodiment of a display substrate provided herein;
FIG. 4 is a schematic view of a partial layer structure of a display substrate according to an embodiment of the present disclosure;
FIG. 5 is a schematic view of a partial layer structure of a display substrate according to another embodiment of the display substrate provided in the present application;
FIG. 6 is a schematic view of a partial layer structure of a display substrate according to still another embodiment of the display substrate provided in the present application;
fig. 7 is a schematic top view of a partial structure of a pixel circuit of a light emitting device in different functional layers, a first electrode layer and a light flux gain structure in yet another embodiment of a display substrate provided by the present application;
FIG. 8 is an enlarged partial view of FIG. 7;
fig. 9 is a flowchart of a method for manufacturing a display substrate according to an embodiment of the present disclosure.
In the figure:
a display substrate-1; display area-AA; a pore region-H; partial display area-AA 1; a sub-pixel circuit region-B; a first sub-pixel circuit region-B1;
a substrate-11; a transparent substrate-111; a buffer layer-112;
a driver device layer-12; a semiconductor layer-121; a source region-S; a channel region-W; a drain region-D; a first interlayer insulating layer-121 a; a first metal layer-122; a second interlayer insulating layer-122 a; a second metal layer-123; a third interlayer insulating layer-123 a; a fourth interlayer insulating layer-123 b; a third metal layer-124;
a row signal line-12 x; a column signal line-12 y; a pixel circuit-12 a;
a planarization layer-13;
a sub-pixel-14; the first sub-pixel 14 a; a first electrode layer-141; a light-emitting layer-142; a second electrode layer-143;
pixel definition layer-15;
light flux gain structure-16; a first media unit-161; a second media unit-162.
Detailed Description
Features and exemplary embodiments of various aspects of the present invention will be described in detail below, and in order to make objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention. It will be apparent to one skilled in the art that the present invention may be practiced without some of these specific details. The following description of the embodiments is merely intended to provide a better understanding of the present invention by illustrating examples of the present invention.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The inventors of the present invention have found in an intensive study that, as the pixel density of a display substrate in the display field is gradually increased, it is difficult to further increase the light transmittance of the display substrate by only optimizing the layout of a driving device layer in the display substrate and/or reducing the line width and the line distance of a conductive structure in the driving device layer. Along with the improvement of pixel density, the holistic luminousness in display area of display substrate descends gradually, influences the sensitization process and the practical application performance of the sensitization module under the screen that sets up in display substrate and the dorsal part that the light-emitting side carried on the back mutually and set up with the display area correspondence.
The present application has been made in view of the discovery and analysis of the above-described technical problems.
A first aspect of an embodiment of the present application provides a display substrate having a plurality of light emitting elements distributed in an array. The display substrate includes a base, a driving device layer, a light emitting device layer, and a luminous flux gain structure. The substrate comprises a transparent substrate layer. The driver device layer is arranged on one side of the substrate and comprises a plurality of signal lines distributed in rows and columns, a plurality of sub-pixel circuit areas are defined by the row signal lines and the column signal lines in a crossed mode, pixel circuits are arranged in the sub-pixel circuit areas, and each pixel circuit comprises a plurality of functional layers which are arranged through interlayer insulating layers in an insulating mode. The light-emitting device layer is arranged on one side, back to the substrate, of the driving device layer and comprises a plurality of sub-pixels distributed in an array mode, and the sub-pixels are correspondingly connected with the pixel circuits to form the light-emitting assembly. The sub-pixel includes a first electrode layer, a light emitting layer, and a second electrode layer which are stacked. The luminous flux gain structure is disposed at least in part of the sub-pixel circuit region. The luminous flux gain structure extends from the transparent substrate layer to a side of the light emitting device layer facing away from the driving device layer in a thickness direction of the display substrate. In the sub-pixel circuit area, the orthographic projection of the luminous flux gain structure on the transparent substrate layer and the orthographic projection dislocation distribution of the functional layers on the transparent substrate layer are distributed, and the orthographic projection of the luminous flux gain structure on the transparent substrate layer and the orthographic projection dislocation distribution of the first electrode layer on the transparent substrate layer are distributed.
In the display substrate provided by the first aspect of the embodiment of the present application, a light flux gain structure extending from the transparent substrate layer to a side of the light emitting device layer facing away from the driving device layer is disposed in the sub-pixel circuit region of the display substrate. Under the condition of not influencing the layout design of the driving device layer and the position layout of the first electrode layer of the sub-pixels, the whole light transmittance of the display substrate is improved, particularly the light transmittance of a display area of the display substrate is improved, the light sensing quality and the light sensing process of the lower screen light sensing module (for example, a fingerprint identification module) which is integrally arranged on the back side of the display substrate opposite to the display side are facilitated, and the actual application performance of the lower screen light sensing module is facilitated to be improved.
A first aspect of embodiments of the present application provides a display substrate, and a display panel according to embodiments of the present application may be presented in various forms, some of which are described below.
As shown in fig. 1, in some alternative embodiments, the display substrate 1 includes a display area AA and a hole area H. The hole area H comprises a hole for arranging a camera, and the partial display area AA1 corresponds to the fingerprint identification module.
The display substrate is provided with a plurality of light-emitting components distributed in an array. In some examples, the display substrate has a plurality of light emitting elements emitting light of different colors, for example, the display substrate includes a blue light emitting element, a green light emitting element, and a red light emitting element. The display substrate includes a base, a driving device layer, a light emitting device layer, and a luminous flux gain structure.
The substrate comprises a transparent substrate layer. In some examples, the display substrate is a rigid display substrate and the transparent substrate layer is made of a transparent material such as glass or rigid light-transmissive plastic. In other examples, the display substrate is a flexible display substrate and the transparent substrate layer is made of an organic polymer, such as a transparent polyimide material.
Fig. 2 is a simplified schematic diagram of a portion of the structure of a portion of the display area AA1 in fig. 1. Fig. 2 schematically shows a positional relationship among the row signal line 12x, the column signal line 12y, the pixel circuit 12a, and the sub-pixel 14 in the display substrate. The thinning structure of the pixel circuit 12a in the driver device layer is simplified, and the layer structure between the light emitting device layer and the driver device layer is omitted.
As shown in fig. 2, the driver device layer is disposed on one side of the substrate, the driver device layer includes a plurality of signal lines arranged in rows and columns, the row signal lines 12x and the column signal lines 12y intersect to define a plurality of sub-pixel circuit regions B, each sub-pixel circuit region B is provided with a pixel circuit 12a, and the pixel circuit 12a includes a plurality of functional layers insulated from each other by an interlayer insulating layer. The light emitting device layer is arranged on one side of the driving device layer, which faces away from the substrate, and comprises a plurality of sub-pixels 14 distributed in an array, and each sub-pixel 14 is correspondingly connected with each pixel circuit 12a to form a light emitting component. The sub-pixel includes a first electrode layer, a light emitting layer, and a second electrode layer which are stacked.
It is understood that there are various signal lines in the driving device layer, such as a reference voltage line (Vref), a power voltage line (ELvdd), a scan line (scan), and a data line (data). It should be noted that fig. 2 schematically shows that the row signal lines 12x and the column signal lines 12y intersect to define a plurality of sub-pixel circuit regions B, and the types, positions, and wiring patterns of the row signal lines 12x and the column signal lines 12y are not to be construed as limiting.
Each sub-pixel 14 is connected to each pixel circuit 12a to form a light emitting element, and the pixel circuit 12a drives the sub-pixel 14 connected to the corresponding sub-pixel to emit light. In some examples, the pixel circuit 12a is provided in the first sub-pixel circuit region B1 as shown in fig. 2. The pixel circuits 12a in the first sub-pixel circuit region B1 are connected to the first sub-pixels 14a, respectively, to constitute a first light-emitting element. The light emitting device herein includes a sub-pixel 14 and a pixel circuit 12a in a sub-pixel circuit region B corresponding to the sub-pixel 14, and the light emitting device of the display substrate can emit light independently when receiving external power.
Herein, the pixel circuit 12a refers to a set of circuit structures for driving the corresponding sub-pixel 14 to emit light, which may include a transistor and a capacitor configured in a preset connection relationship. One of the first electrode layer and the second electrode layer of the sub-pixel 14 is an anode layer, and the other is a cathode layer. In the following embodiments, a first electrode layer disposed on a side of the light emitting layer facing the driving device layer is taken as an anode layer, and a second electrode layer disposed on a side of the light emitting layer opposite to the driving device layer is taken as a cathode layer. In some examples, a compensation layer, a hole transport layer, and a hole injection layer are stacked between the light emitting layer and the first electrode layer. A hole blocking layer, an electron transport layer and an electron injection layer are stacked between the light-emitting layer and the second electrode layer.
The luminous flux gain structure 16 is at least arranged in a partial sub-pixel circuit area B, in the thickness direction of the display substrate, the luminous flux gain structure extends from the transparent substrate layer to the side, back to the drive device layer, of the light-emitting device layer, in the sub-pixel circuit area B, the orthographic projection of the luminous flux gain structure 16 on the transparent substrate layer and the orthographic projection dislocation distribution of the functional layers on the transparent substrate layer are distributed, and the orthographic projection of the luminous flux gain structure 16 on the transparent substrate layer and the orthographic projection dislocation distribution of the first electrode layer on the transparent substrate layer are distributed. In these embodiments, the light flux gain structure 16 is disposed at least in part in the sub-pixel circuit region, extends from the transparent substrate layer to a side of the light emitting device layer facing away from the driving device layer, and penetrates at least a portion of the insulating film layer between a side of the transparent substrate layer facing toward the driving device layer and a side of the light emitting device layer facing away from the driving device layer. The insulating film layer includes an interlayer insulating layer disposed between the functional layers of the pixel circuit 12a, a buffer layer disposed between the transparent substrate layer and the driving device layer in the substrate, a planarization layer disposed on a side of the driving device layer opposite to the transparent substrate layer, and a pixel defining layer.
In some alternative embodiments, the light incident on the transparent substrate layer corresponding to the area of the light flux gain structure 16 exits the light emitting surface of the light emitting device layer through the light flux gain structure 16. It will be appreciated that the area corresponding to the light flux gain structure 16 serves as a new light path area of the display substrate. Light is not affected by reflection and refraction of the plurality of stacked insulating film layers while propagating through the light flux gain structure 16 inside the display substrate in the thickness direction of the display substrate, exits the display substrate with less light loss and substantially unchanged light propagation path,
in some examples, fingerprint identification module sets up the dorsal part that carries on the back at display substrates and display side mutually, and fingerprint identification module work when the user presses the finger to the display screen on, sends highlight "illumination" fingerprint by the display screen, and light takes place to reflect at the interface of finger and display screen contact and forms the reverberation. More reverberation passes through luminous flux gain structure 16 and is followed the dorsal part outgoing of display substrates, and the camera of incidenting in the fingerprint identification module, because setting up of luminous flux anti-reflection structure increases the transmissivity of reverberation at the display substrates for the pattern that the fingerprint reflection was shot to the camera is clearer, has improved fingerprint identification's efficiency and precision.
As shown in fig. 3 and 4, in some optional embodiments, the light emitting device layer further includes a pixel defining layer 15 disposed on a side of the driving device layer opposite to the substrate 11, the pixel defining layer 15 includes a plurality of pixel openings, the sub-pixels 14 are located in the pixel openings, and a forward projection of the pixel defining layer 15 on the transparent substrate layer covers a forward projection of the light flux gain structure 16 on the transparent substrate layer. The different colored sub-pixels 14 are illustrated in fig. 3 with different hatching. In some examples, the light emitting device layer includes a blue sub-pixel 14, a green sub-pixel 14, and a red sub-pixel 14.
As shown in fig. 4, in some embodiments, the base 11 of the display substrate includes a transparent substrate layer 111 and a buffer layer 112 in the base 11 disposed between the transparent substrate layer 111 and the driving device layer 12. In some examples, the buffer layer 112 has a plurality of buffer sublayers arranged in a stack, the buffer sublayers being formed of at least one of SiOx material and SiNx material. The driving device layer 12 is disposed on a side of the buffer layer 112 facing away from the transparent substrate layer 111. The functional layer includes a semiconductor layer 121, a first metal layer 122, a second metal layer 123, and a third metal layer 124.
The semiconductor layer 121 is disposed on a side of the buffer layer 112 facing away from the light-transmitting substrate 11. The semiconductor layer 121 includes a plurality of active structures including a source region S, a drain region D, and a channel region W disposed coplanar on a plane perpendicular to a thickness direction of the display substrate. The source region S and the drain region D are conductive regions, the channel region W is a semiconductive region, and the conductivity of the active structure in the source region S and the drain region D is greater than the conductivity of the active structure in the channel region W. The semiconductor layer 121 may be a Silicon semiconductor layer 121, such as a polysilicon (p-Si) layer, and in the embodiment, the semiconductor layer 121 is a Low Temperature Polysilicon (LTPS) layer. The semiconductor layer 121 is not limited to the material of the above example, and may be another silicon semiconductor layer 121 such as single crystal silicon, and may also be an oxide semiconductor layer 121 such as Indium Gallium Zinc Oxide (IGZO).
The first metal layer 122 is disposed on a side of the semiconductor layer 121 opposite to the buffer layer 112 and is insulated from the semiconductor layer 121 by a first interlayer insulating layer 121 a. In some examples, the first metal layer 122 includes conductive structures such as gates, gate traces, and the like. The second metal layer 123 is disposed on a side of the first metal layer 122 opposite to the buffer layer 112 and is insulated from the first metal layer 122 by a second interlayer insulating layer 122 a. The second metal layer 123 includes a capacitor, a connection line with the source/drain, and a signal line. The third metal layer 124 is disposed on a side of the second metal layer 123 opposite to the buffer layer 112, and is insulated from the second metal layer 123 by a third interlayer insulating layer 123a and a fourth interlayer insulating layer 123b which are stacked. And, the third metal layer 124 is connected to the source and drain electrodes through first via holes penetrating the first to fourth interlayer insulating layers 121a to 123 b. The third metal layer 124 is connected to at least a part of the conductive structure in the first metal layer 122 through a second via hole penetrating the second to fourth interlayer insulating layers 122a to 123 b. The third metal layer 124 is connected to at least a part of the conductive structures in the second metal layer 123 through third vias penetrating through the third interlayer insulating layer 123a and the fourth interlayer insulating layer 123 b.
In these embodiments, the light flux gain structure 16 extends from the transparent substrate layer 111 to the side of the light emitting device layer facing away from the driving device layer 12 at least in part of the sub-pixel circuit area. And penetrates at least the buffer layer 112, the planarization layer 13, and the interlayer insulating layer between the buffer layer 112 and the planarization layer 13 in the thickness direction of the display substrate. In the sub-pixel circuit region, the orthographic projection of the luminous flux gain structures 16 on the transparent substrate layer 111 and the orthographic projection of the functional layers on the transparent substrate layer 111 are distributed in a staggered mode, and the orthographic projection of the luminous flux gain structures 16 on the transparent substrate layer 111 and the orthographic projection of the first electrode layer 141 on the transparent substrate layer 111 are distributed in a staggered mode. In some examples, the light emitting device layer includes a pixel defining layer 15 having a plurality of pixel openings, and the pixel defining layer 15 is disposed on a side of the driving device layer 12 facing away from the substrate 11. The sub-pixels 14 having the first electrode layer 141, the light-emitting layer 142, and the second electrode layer 143 stacked are located at the corresponding pixel openings. The display substrate further includes a planarization layer 13 disposed between the light emitting device layer and the driving device layer 12, the planarization layer 13 is disposed on a side of the pixel definition layer 15 facing the driving device layer and has a plurality of first openings, and the first electrode layer 141 is connected to the pixel circuits through the first openings.
Referring also to fig. 4, in some alternative embodiments, the luminous flux gain structure 16 is made of a light-transmissive organic material forming the pixel defining layer 15. In these embodiments, the pixel defining layer 15 is formed using a light-transmissive organic glue, and the light flux gain structure 16 is also formed using a light-transmissive organic glue.
As an expanded embodiment of the above-described embodiment, the end of the light flux gain structure 16 facing away from the transparent substrate layer 111 is arranged flush with the end of the pixel defining layer 15 facing away from the driving device layer 12. In these embodiments, before the pixel definition layer 15 is fabricated, a hole penetrating at least to the surface of the transparent substrate layer 111 adjacent to the driving device layer 12 may be formed in a region corresponding to the light flux gain structure 16, the hole may be filled with a light-transmissive organic glue when the pixel definition layer 15 is fabricated, a pre-pixel definition layer may be formed, the pre-pixel definition layer covers the transparent substrate in an orthographic projection of the transparent substrate, and the pre-pixel definition layer 15 is patterned to form the pixel definition layer 15. In some examples, the side of the light flux gain structure 16 facing away from the transparent substrate 111 is contiguous with the pixel defining layer 15.
As shown in fig. 5, in some optional embodiments, the display substrate further includes a planarization layer 13 disposed between the light emitting device layer and the driving device layer 12, the planarization layer 13 is disposed on a side of the pixel defining layer facing the driving device layer 12 and has a plurality of first openings, and the first electrode layer 141 is connected to the pixel circuit through the first openings. The light flux gain structure 16 includes a first dielectric unit 161 and a second dielectric unit 162, which are stacked and disposed on a side of the first dielectric unit 161 facing away from the transparent substrate layer 111, the first dielectric unit 161 being made of a light-transmissive organic material forming the planarization layer 13, and the second dielectric unit 162 being made of a light-transmissive organic material forming the pixel defining layer 15. In these embodiments, the planarization layer 13 and the pixel defining layer 15 are formed by using a light-transmissive organic glue.
As an expanded example of the above embodiment, an end of the second dielectric unit 162 facing away from the transparent substrate layer 111 is disposed flush with an end of the pixel defining layer 15 facing away from the driving device layer 12. In some examples, the side of the second dielectric unit 162 of the light flux gain structure 16 facing away from the transparent substrate is contiguous with the pixel defining layer 15. In these embodiments, when the display substrate is manufactured, a hole penetrating at least to the surface of the transparent substrate layer 111 adjacent to the driving device layer 12 may be formed in a region corresponding to the light flux gain structure 16 on a provided array substrate motherboard, when the planarization layer 13 is manufactured, the hole is partially filled with the first light-transmissive organic glue to form the first dielectric unit 161, and a pre-planarization layer is formed by using the first light-transmissive organic glue, and an orthographic projection of the pre-planarization layer on the transparent substrate covers the transparent substrate. The pre-planarization layer 13 is patterned to form the planarization layer 13. When the pixel definition layer 15 is manufactured, on the array substrate motherboard on which the planarization layer 13 is formed, the second transparent organic glue is further filled into the unfilled portion of the hole to form a second dielectric unit 162, and a pre-manufactured pixel definition layer is manufactured on the side of the planarization layer 13 opposite to the transparent substrate 111 by using the second transparent organic glue. The pre-pixel defining layer is patterned to form a pixel defining layer 15. An orthographic projection of the pre-formed pixel definition layer on the transparent substrate covers the transparent substrate.
As shown in fig. 6, in some alternative embodiments, the light flux gain structure 16 is formed by extending the transparent substrate layer 111 to the end of the pixel defining layer 15 facing away from the driving device layer 12, and the light flux gain structure 16 is formed by using a light-transmissive organic material. In these embodiments, the pixel defining layer 15 is made of a material that is opaque or has low light transmittance. The interference of the sub-pixel 14 to the light emission color development of the adjacent sub-pixel 14 can be further prevented, color mixing can be avoided, and the light emission display effect can be further improved. The light flux gain structure 16 is made of a light-transmitting organic material, so that the light transmittance of the display substrate in the area corresponding to the light flux gain structure 16 is improved, and the application of the photosensitive module under the screen is facilitated.
In some alternative embodiments, the thickness of the light flux gain structure in the thickness direction of the display substrate ranges from 6.5 μm to 7.0 μm. It will be appreciated that the thickness of the light flux gain structure in the thickness direction of the display substrate may be measured from the end of the light flux gain structure facing towards the transparent substrate to the end of the light flux gain structure facing away from the transparent substrate. In these embodiments, the light flux gain structure is formed using a light-transmissive organic material, and the thickness of the light flux gain structure in the thickness direction of the display substrate is greater than or equal to the thickness of the driver device layer in the display substrate. On the one hand, the stress absorption effect can be achieved, deformation or cracking of the driving device layer due to stress action is prevented, and on the other hand, the production efficiency of the display substrate in the embodiment of the application can be improved.
As shown in fig. 7 and 8, the functional layers in the pixel circuit include a semiconductor layer 121, a first metal layer 122, a second metal layer 123, and a third metal layer 124. In some optional embodiments, the shortest distance D1 between the boundary line of the orthographic projection of the light flux gain structure 16 on the transparent substrate layer and the boundary line of the orthographic projection of the functional layers on the transparent substrate layer has a value range of D1 ≥ 1.5 μm; and the shortest distance D2 between the boundary line of the orthographic projection of the luminous flux gain structure 16 on the transparent substrate layer and the boundary line of the orthographic projection of the first electrode layer on the transparent substrate layer has the value range of D2 which is more than or equal to 1.5 mu m. In these embodiments, in directions perpendicular to the thickness direction of the display substrate, the distances between each light flux anti-reflection structure and the plurality of functional layers and the distances between each light flux anti-reflection structure and the first electrode layer are controlled, so that a conductive material (e.g., metal oxide, etc.) falling into a hole-digging region corresponding to the light flux gain structure 16 during the process of preparing the display substrate is prevented from contacting the functional layers and/or the first electrode layer to cause short circuit, and the stability of the performance of the display substrate is ensured.
In some alternative embodiments, the smallest dimension d1 of the orthographic projection of the light flux gain structure 16 on the transparent substrate layer in directions in a first plane perpendicular to the thickness direction of the display substrate has a value in the range d1>2 μm. In some examples, in the process of manufacturing the display substrate according to the embodiment of the present application, a photolithography process is used to perform photolithography processing on a region corresponding to a light flux anti-reflection structure of a provided array substrate motherboard, where the light flux anti-reflection structure is mostly of a special-shaped structure, and in order to ensure that an insulating layer in the region corresponding to the light flux anti-reflection structure can be removed by etching, a minimum dimension of the region corresponding to the light flux anti-reflection structure in each direction of a first plane perpendicular to a thickness direction of the display substrate needs to be greater than a minimum value of an etching capability of the photolithography process. And then, the minimum dimension d1 of the orthographic projection of the luminous flux gain structure 16 on the transparent substrate layer in each direction of the first plane perpendicular to the thickness direction of the display substrate is enabled to accord with the minimum value of the etching capability of the photoetching process, so that the area corresponding to the luminous flux gain structure can be etched to obtain a hole, and the smooth formation of the luminous flux structure is further ensured.
As shown in fig. 9, a second aspect of the embodiments of the present application provides a method for manufacturing a display substrate, including:
s10, providing an array substrate motherboard, wherein the array substrate motherboard comprises a transparent substrate layer and a driver device layer which are arranged in a stacked mode, the driver device layer comprises a plurality of signal lines which are distributed in rows and columns, the row signal lines and the column signal lines are crossed to define a plurality of sub-pixel circuit areas, pixel circuits are arranged corresponding to the sub-pixel circuit areas, and each pixel circuit comprises a plurality of functional layers which are arranged in an insulated mode through interlayer insulating layers;
s20, carrying out patterning processing on the array substrate motherboard to form holes in at least partial sub-pixel circuit areas in the plurality of sub-pixel circuit areas, wherein the holes penetrate at least to the surface of the transparent substrate layer adjacent to the driving device layer;
and S30, filling the holes with a light-transmitting material to form a light flux gain structure.
In some embodiments, in the step of patterning the array substrate motherboard, the predetermined patterned region (the region corresponding to the light flux gain structure in the sub-pixel circuit region) of the array substrate motherboard and the orthographic projection of the plurality of functional layers on the transparent substrate layer are distributed in a staggered manner. And the predetermined patterned region and the predetermined first electrode layer region are also distributed by dislocation. In some examples, a planarization layer is formed on a side of the driving device layer opposite to the transparent substrate layer, a first electrode layer is formed on a side of the planarization layer opposite to the transparent substrate layer, and then a pixel defining layer with a plurality of pixel openings is formed by using a light-transmitting material and the holes are filled, so that the pixel defining layer and the light flux gain structure are formed synchronously.
The third aspect of the embodiments of the present application provides a display module. The display module assembly includes: a display substrate in the first aspect of the embodiments of the present application, having a light exit side and a back side opposite to the light exit side; and the under-screen functional module is arranged on the back side of the display substrate and is arranged corresponding to the sub-pixel circuit area with the luminous flux gain structure.
In accordance with the above-described embodiments of the present invention, these embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to the particular use contemplated. The invention is limited only by the claims and their full scope and equivalents.
Claims (10)
1. A display substrate having a plurality of light emitting elements arranged in an array, the display substrate comprising:
a substrate comprising a transparent substrate layer;
the driving device layer is arranged on one side of the substrate and comprises a plurality of signal lines distributed in rows and columns, a plurality of sub-pixel circuit areas are defined by the line signal lines and the column signal lines in a crossed mode, a pixel circuit is arranged in each sub-pixel circuit area, and each pixel circuit comprises a plurality of functional layers which are arranged in an insulated mode through interlayer insulating layers;
the light-emitting device layer is arranged on one side, back to the substrate, of the driving device layer and comprises a plurality of sub-pixels distributed in an array mode, and each sub-pixel is correspondingly connected with each pixel circuit to form the light-emitting assembly; the sub-pixel comprises a first electrode layer, a light-emitting layer and a second electrode layer which are arranged in a stacked mode;
the luminous flux gain structure is at least arranged in a part of the sub-pixel circuit area, in the thickness direction of the display substrate, the luminous flux gain structure extends from the transparent substrate layer to one side, back to the driving device layer, of the light-emitting device layer, in the sub-pixel circuit area, the orthographic projection of the luminous flux gain structure on the transparent substrate layer and the orthographic projection dislocation distribution of the functional layers on the transparent substrate layer are distributed, and the orthographic projection of the luminous flux gain structure on the transparent substrate layer and the orthographic projection dislocation distribution of the first electrode layer on the transparent substrate layer are distributed.
2. The display substrate of claim 1, wherein light incident on the transparent substrate layer exits the light emitting device layer light emitting surface via the light flux gain structure corresponding to the area of the light flux gain structure.
3. A display substrate according to claim 1, wherein the light emitting device layer further comprises a pixel definition layer disposed on a side of the driving device layer facing away from the base, the pixel definition layer comprising a plurality of pixel openings, the sub-pixels being located at the pixel openings, an orthographic projection of the pixel definition layer on the transparent substrate layer covering an orthographic projection of the luminous flux gain structure on the transparent substrate layer.
4. A display substrate according to claim 3, wherein the light flux gain structure is comprised of a light transmissive organic material forming the pixel defining layer;
preferably, an end of the light flux gain structure facing away from the transparent substrate layer is disposed flush with an end of the pixel defining layer facing away from the driving device layer.
5. The display substrate according to claim 3, further comprising a planarization layer disposed between the light emitting device layer and the driving device layer, the planarization layer being disposed on a side of the pixel defining layer facing the driving device layer and having a plurality of first openings through which the first electrode layer is connected with the pixel circuits,
the luminous flux gain structure comprises a first dielectric unit and a second dielectric unit, wherein the first dielectric unit and the second dielectric unit are arranged in a stacked mode, the second dielectric unit is arranged on one side, opposite to the transparent substrate layer, of the first dielectric unit, the first dielectric unit is made of light-transmitting organic materials forming the planarization layer, and the second dielectric unit is made of light-transmitting organic materials forming the pixel defining layer;
preferably, an end of the second dielectric unit facing away from the transparent substrate layer is flush with an end of the pixel defining layer facing away from the driving device layer.
6. A display substrate according to claim 3, wherein a light flux gain structure extends from the transparent substrate layer to an end of the pixel definition layer facing away from the driving device layer, the light flux gain structure being made of a light-transmissive organic material.
7. The display substrate according to any one of claims 4 to 6, wherein the light flux gain structure has a thickness ranging from 6.5 μm to 7.0 μm in a thickness direction of the display substrate.
8. The array substrate of claim 1, wherein the shortest distance D1 between the boundary line of the orthographic projection of the luminous flux gain structure on the transparent substrate layer and the boundary line of the orthographic projection of the functional layers on the transparent substrate layer ranges from D1 ≥ 1.5 μm; the value range of the shortest distance D2 between the orthographic projection boundary line of the luminous flux gain structure on the transparent substrate layer and the orthographic projection boundary line of the first electrode layer on the transparent substrate layer is D2 which is more than or equal to 1.5 mu m;
preferably, a minimum dimension d1 of an orthographic projection of the light flux gain structure on the transparent substrate layer in each direction of a first plane perpendicular to a thickness direction of the display substrate has a value range of d1>2 μm.
9. A method for preparing a display substrate is characterized by comprising the following steps:
providing an array substrate motherboard, wherein the array substrate motherboard comprises a transparent substrate layer and a driving device layer which are arranged in a stacked mode, the driving device layer comprises a plurality of signal lines which are distributed in rows and columns, a plurality of sub-pixel circuit areas are defined by the line signal lines and the column signal lines in a crossed mode, each sub-pixel circuit area is provided with a pixel circuit, and each pixel circuit comprises a plurality of functional layers which are arranged in an insulated mode through interlayer insulating layers;
patterning the array substrate motherboard to form holes in at least a portion of the plurality of sub-pixel circuit regions, the holes penetrating at least to a surface of the transparent substrate layer adjacent to the driver device layer;
and filling the holes with a light-transmitting material to form a light flux gain structure.
10. The utility model provides a display module assembly, its characterized in that, display module assembly includes:
a display substrate according to any one of claims 1 to 8 having a light exit side and a back side opposite the light exit side;
and the under-screen functional module is arranged on the back side of the display substrate and is arranged corresponding to the sub-pixel circuit area with the luminous flux gain structure.
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| CN113571667A (en) * | 2021-07-27 | 2021-10-29 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof and display device |
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| CN115020619A (en) * | 2022-07-08 | 2022-09-06 | 武汉华星光电半导体显示技术有限公司 | Display panel and mobile terminal |
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