CN114823824A - Transparent display panel and transparent display device - Google Patents
Transparent display panel and transparent display device Download PDFInfo
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- CN114823824A CN114823824A CN202210378404.9A CN202210378404A CN114823824A CN 114823824 A CN114823824 A CN 114823824A CN 202210378404 A CN202210378404 A CN 202210378404A CN 114823824 A CN114823824 A CN 114823824A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- Microelectronics & Electronic Packaging (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses a transparent display panel and a transparent display device, wherein the transparent display panel comprises a panel main body and a photoelectric sensing structure arranged on one side of the panel main body, which is far away from a first substrate, the photoelectric sensing structure comprises a second substrate, and a second thin film transistor and a photoelectric sensor which are electrically connected, the photoelectric sensor is arranged on one side of the second thin film transistor, which is far away from the second substrate, and the photoelectric sensor is arranged corresponding to a light-transmitting area of the panel main body, so that the light can be sensed in the light-transmitting area, the whole optical light sensing of the transparent display device is realized, the application scenes of the transparent display device are increased, and the application function diversification is promoted.
Description
Technical Field
The invention relates to the technical field of display, in particular to a transparent display panel and a transparent display device.
Background
With the progress of image realization technology, in recent years, the demand for transparent display devices has increased, and there is a demand for transparent display in the field of in-vehicle central control HUDs, televisions, and the like, in which at least a partial region on which information is displayed is transparent to transmit light so that an object or background behind the transparent display panel is visible to a user in front of the panel. However, the application scenario for the transparent display device is single at present. The application function of the compound is diversified and needs to be further improved.
Disclosure of Invention
The embodiment of the invention provides a transparent display panel and a transparent display device, and aims to solve the technical problem that the application scene of the conventional transparent display panel and the conventional transparent display device is single.
In order to solve the above problems, the technical scheme provided by the invention is as follows:
the present invention provides a transparent display panel, comprising:
the panel comprises a panel main body and a plurality of pixel units, wherein the panel main body comprises a first substrate and a plurality of pixel units arranged on the first substrate, each pixel unit comprises a luminous area and a light-transmitting area, the luminous area is provided with a first thin film transistor and a luminous device which are electrically connected, and the luminous device is arranged on one side, far away from the first substrate, of the first thin film transistor; and
the photoelectric sensing structure is arranged on one side, away from the first substrate, of the panel body and comprises a second substrate, a second thin film transistor and a photoelectric sensing device, wherein the second thin film transistor and the photoelectric sensing device are arranged on one side, close to the first substrate, of the second substrate and are electrically connected, the photoelectric sensing device is arranged on one side, away from the second substrate, of the second thin film transistor, and the photoelectric sensing device and the light transmitting area are correspondingly arranged.
According to the transparent display panel provided by the invention, the panel main body is provided with the digging hole in the light-transmitting area, the digging hole penetrates through the panel main body, and the photoelectric sensor is arranged corresponding to the digging hole.
According to the transparent display panel provided by the present invention, the second thin film transistor includes:
the semiconductor layer is arranged on one side, close to the first substrate, of the second substrate;
the first grid insulating layer covers one side of the semiconductor layer, which is far away from the second substrate;
the first grid electrode is arranged on one side, far away from the second substrate, of the first grid electrode insulating layer;
the second grid electrode insulating layer covers one side of the first grid electrode, which is far away from the second substrate;
the second grid electrode is arranged on one side, far away from the second substrate, of the second grid electrode insulating layer;
the interlayer dielectric layer covers one side of the second grid electrode, which is far away from the second substrate; and
the source drain metal layer is arranged on one side, far away from the second substrate, of the interlayer dielectric layer;
the photoelectric sensing device comprises a first electrode layer, an active layer and a second electrode layer, wherein the second electrode layer and the source and drain electrode metal layer are arranged on the same layer, and one of a first pole and a second pole of the second electrode layer is electrically connected with the source and drain electrode metal layer.
According to the transparent display panel provided by the invention, the material of the active layer is a high-transmittance semiconductor material with photosensitive property; the first electrode layer is a transparent electrode.
According to the transparent display panel provided by the present invention,
the first electrode layer and the first grid or the second grid are arranged on the same layer;
the active layer is arranged on one side, far away from the second substrate, of the second gate insulating layer;
the second electrode layer is arranged on one side, far away from the second substrate, of the active layer;
wherein the photoelectric sensing structure further comprises:
a first protective layer disposed in a gap between the first pole and the second pole; and
and the second protective layer covers the active layer and one side of the first protective layer, which is far away from the second substrate.
According to the transparent display panel provided by the invention, the first electrode layer and the first grid or the second grid are arranged on the same layer;
the second electrode layer is arranged on one side, far away from the second substrate, of the second gate insulating layer;
the active layer is disposed in a gap between the first pole and the second pole;
wherein the photoelectric sensing structure further comprises:
and the second protective layer covers one side of the second electrode layer and one side of the active layer, which are far away from the second substrate.
According to the transparent display panel provided by the invention, the active layer is arranged on one side of the second grid insulating layer, which is far away from the second substrate;
the second electrode layer is arranged on one side, far away from the second substrate, of the active layer;
wherein the photoelectric sensing structure further comprises:
a first protective layer disposed in a gap between the first pole and the second pole; and
the second protective layer covers the second electrode layer and one side, far away from the second substrate, of the first protective layer;
the first electrode layer is arranged on one side, far away from the second substrate, of the second protective layer.
According to the transparent display panel provided by the invention, the second electrode layer is arranged on one side of the second gate insulating layer, which is far away from the second substrate;
the active layer is disposed in a gap between the first pole and the second pole;
wherein the photoelectric sensing structure further comprises:
the second protective layer covers one side, far away from the second substrate, of the second electrode layer and the active layer;
the first electrode layer is arranged on one side, far away from the second substrate, of the second protective layer.
According to the transparent display panel provided by the invention, the transparent display panel further comprises an optical adhesive assembling layer, the optical adhesive assembling layer is arranged between the panel main body and the photoelectric sensing structure, and the optical adhesive assembling layer is a transparent adhesive layer.
The invention provides a transparent display device, comprising the transparent display panel;
and the protective cover plate is arranged on one side of the transparent display panel, which is far away from the photoelectric sensing structure.
The invention has the beneficial effects that: according to the transparent display panel and the transparent display device provided by the invention, the photoelectric sensing structure is arranged on one side of the panel main body, which is far away from the first substrate, and comprises the second thin film transistor and the photoelectric sensor part which are electrically connected, the photoelectric sensor part is arranged on one side of the second thin film transistor, which is far away from the second substrate, and the photoelectric sensor is arranged corresponding to the light-transmitting area of the panel main body, so that the light-transmitting area can be subjected to light sensing, the whole-surface optical light sensing of the transparent display device is realized, the functions of safety identification, biological sensing, optical compensation, light energy collection and the like can be increased, the application scenes of the transparent display device are enriched, and the application function diversification is promoted.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic cross-sectional structure diagram of a first transparent display panel according to an embodiment of the present invention;
FIG. 2 is a graph illustrating transmittance versus visible wavelength according to an embodiment of the present invention;
fig. 3 is a schematic cross-sectional structure diagram of a second transparent display panel according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a third transparent display panel according to an embodiment of the present invention;
fig. 5 is a schematic cross-sectional structure diagram of a fourth transparent display panel according to an embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view of a fifth transparent display panel according to an embodiment of the present invention
Fig. 7 is a simplified structural diagram of a transparent display device according to an embodiment of the present invention.
Description of reference numerals:
100. a transparent display panel; 200. a protective cover plate;
10. a panel main body; 10a, a light emitting region; 10b, a light-transmitting area; 101b, digging a hole; 101. a first substrate; 1010. a second PI layer; 1011. a second buffer layer; 102. a first thin film transistor; 103. a second planarizing layer; 104. an anode; 105. a light emitting device; 106. a pixel defining layer; 107. a second encapsulation layer; 1071. a first inorganic encapsulation layer; 1072. an organic encapsulation layer; 1073. a second inorganic encapsulation layer;
11. a photoelectric sensing structure; 111. a second substrate; 1110. a substrate; 1111. a first PI layer; 1112. a first buffer layer; 112. a second thin film transistor; 1120. a semiconductor layer; 1121. a first gate insulating layer; 1122. a first gate electrode; 1123. a second gate insulating layer; 1124. a second gate electrode; 1125. an interlayer dielectric layer; 1126. a passivation layer; 1127. a source drain metal layer; 113. a photoelectric sensor device; 1130. a first electrode layer; 1131. an active layer; 1132. a second electrode layer; 1132a, a first pole; 1132b, a second pole; 1133. a first protective layer; 1134. a second protective layer; 114. a first planarizing layer; 115. a first encapsulation layer;
12. and an optical cement assembling layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. Furthermore, it should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, and are not intended to limit the present invention. In the present invention, unless otherwise specified, the use of directional terms such as "upper" and "lower" generally means upper and lower in the actual use or operation of the device, particularly in the orientation of the figures of the drawings; while "inner" and "outer" are with respect to the outline of the device.
Referring to fig. 1, the present invention provides a transparent display panel 100, wherein the transparent display panel 100 includes a panel main body 10 and a photo sensor structure 11; the panel main body 10 includes a first substrate 101 and a plurality of pixel units disposed on the first substrate 101, each of the pixel units includes a light emitting region 10a and a light transmitting region 10b, the light emitting region 10a is disposed with a first thin film transistor 102 and a light emitting device 105 electrically connected, and the light emitting device 105 is disposed on a side of the first thin film transistor 102 away from the first substrate 101.
The photo-sensing structure 11 is disposed on a side of the panel body 10 away from the first substrate 101, the photo-sensing structure 11 includes a second substrate 111, and an electrically connected second thin film transistor 112 and a photo-sensing device 113 disposed on a side of the second substrate 111 close to the first substrate 101, the photo-sensing device 113 is disposed on a side of the second thin film transistor 112 away from the second substrate 111, and the photo-sensing device 113 is disposed corresponding to the light-transmitting region 10 b.
It should be noted that the photoelectric sensing structure 11 is a light sensing array, that is, the photoelectric sensing structure 11 includes a plurality of second thin film transistors 112 and the photoelectric sensing device 113 arranged in an array, the photoelectric sensing structure 11 may be a fingerprint identification sensor, a camera, a structured light sensor, a time-of-flight sensor, a distance sensor, a light sensor, etc., the photoelectric sensing device 113 may collect signals through the light transmitting region 10b, so that the transparent display panel 100 can sense light in the light transmitting region 10b while realizing transparent display, so as to realize off-screen sensing schemes such as off-screen fingerprint identification, off-screen camera, off-screen lower portion identification, off-screen distance sensing, etc., increase functions such as safety identification, bio-sensing, optical compensation, and light energy collection, and enrich application scenarios of the transparent display device, application function diversification is promoted.
Further, the panel body 10 is formed with a cut hole 101b in the light-transmitting region 10b, the cut hole 101b penetrates through the panel body 10, and the photoelectric sensor 113 is disposed corresponding to the cut hole 101 b. The cut-out hole 101b is arranged between two adjacent pixel units, and the cut-out hole 101b reduces the loss of the external light penetrating through the light-transmitting area 10b under the condition that the display of the pixel units in the light-emitting area 10a is not influenced, so that the transmittance of the external light is further increased.
The cutout 101b may be disposed between two adjacent pixel units, or disposed between two adjacent sub-pixels, and the specific position depends on the size of the pitch between each sub-pixel or each pixel unit, which is not limited in the embodiment of the present invention.
Specifically, the orthographic projection of the photoelectric sensor 113 on the panel body 10 is located in the light-transmitting region 10b, and further, the orthographic projection of the photoelectric sensor 113 on the panel body 10 is located in the orthographic projection of the cutout hole 101b on the panel body 10.
Specifically, the cut hole 101b may penetrate through an organic film layer including, but not limited to, the pixel defining layer 106 and an inorganic film layer including, but not limited to, a passivation layer, an interlayer dielectric layer, a gate insulating layer, etc. on the panel body 10. The shape of the dug hole 101b is not limited in the embodiment of the invention, and the dug hole 101b is as large as possible under the condition that normal display is not influenced.
In the exemplary embodiment of the present invention, the first substrate 101 and the second substrate 111 may be flexible substrate, but a rigid substrate may also be used; specifically, the second substrate 111 includes a base plate 1110, a first PI (polyimide) layer 1111, and a first buffer layer 1112, and the first PI layer 1111 is to block an influence of heat generated when a film layer is deposited upward on the photo sensor device 113; the first substrate 101 includes a second PI layer 1010 and a second buffer layer 1011, and the second buffer layer 1011 is disposed on a side of the first substrate 101 away from the photo-sensor device 113.
Specifically, the second thin film transistor 112 includes a semiconductor layer 1120, a first gate insulating layer 1121, a first gate electrode 1122, a second gate insulating layer 1123, a second gate electrode 1124, an interlayer dielectric layer 1125, and a source drain metal layer 1127; the semiconductor layer 1120 is disposed on a side of the second substrate 111 close to the first substrate 101; the first gate insulating layer 1121 covers a side of the semiconductor layer 1120 away from the second substrate 111; the first gate electrode 1122 is disposed on a side of the first gate insulating layer 1121 away from the second substrate 111; the second gate insulating layer 1123 covers the first gate 1122 on the side away from the second substrate 111; the second gate 1124 is disposed on a side of the second gate insulating layer 1123 away from the second substrate 111; the interlayer dielectric layer 1125 covers the second gate 1124 at a side far from the second substrate 111; the source-drain metal layer 1127 is disposed on a side of the interlayer dielectric layer 1125 away from the second substrate 111.
The photo sensor device 113 includes a first electrode layer 1130, an active layer 1131, and a second electrode layer 1132, in order to reduce the manufacturing process and reduce the production cost, the second electrode layer 1132 is disposed in the same layer as the source drain metal layer 1127, one of a first electrode 1132a and a second electrode 1132b of the second electrode layer 1132 is electrically connected to the source drain metal layer 1127, the first electrode 1132a may serve as one of a source and a drain of the photo sensor device 113, and the second electrode 1132b may serve as the other of the source and the drain of the photo sensor device 113.
Specifically, the orthographic projection of the active layer 1131 on the panel main body 10 is located in the light-transmitting region 10b, and further, the orthographic projection of the active layer 1131 on the panel main body 10 is located in the orthographic projection of the cutout hole 101b on the panel main body 10, so that the external light can be completely incident into the active layer 1131.
Specifically, the active layer 1131 may have a one-layer or multi-layer structure, or may have a heterojunction structure. In order to increase the transmittance of the external light incident on the photoelectric sensing device 113, the active layer 1131 is made of a high transmittance semiconductor material with photosensitive characteristics, and optionally, the active layer 1131 may be made of one or more of Indium Zinc Oxide (IZO), Indium Gallium Zinc Oxide (IGZO), and aluminum zinc oxide (ALZO).
Specifically, the first electrode layer 1130 is used as a gate electrode of the photo-sensor device 113, and similarly, in order to increase the transmittance of the external light incident on the photo-sensor device 113, the first electrode layer 1130 is a transparent electrode, and the material of the first electrode layer 1130 may be Indium Tin Oxide (ITO), Indium Gallium Zinc Oxide (IGZO), or the like. The second electrode layer 1132 serves as a source and a drain of the photo sensor device, and the second electrode layer 1132 may be an opaque metal, for example, molybdenum, titanium, aluminum, silver, copper, or the like; the transparent electrode may be, for example, Indium Tin Oxide (ITO), Indium Gallium Zinc Oxide (IGZO), or the like.
An inorganic insulating layer may be disposed between any two of the first electrode layer 1130, the active layer 1131, and the second electrode layer 1132, and a material of the inorganic insulating layer may be one or a combination of silicon nitride, silicon oxide, and silicon oxynitride.
Referring to fig. 2, the inventors have experimentally verified the transmittance of the photoelectric sensing device 113 provided in the embodiment of the present invention, and now the experimental results are described as follows:
the parameters of each film layer of the photoelectric sensing device 113 selected in the experiment are specifically: the first electrode layer 1130 is made of indium tin oxide and has a thickness of 150 nm; the second electrode layer 1132 is made of indium tin oxide and has a thickness of 150 nm; the active layer 1131 is made of aluminum zinc oxide, and the thickness of the active layer is 10 nanometers; the inorganic insulating layer is made of silicon oxide and has a thickness of 200 nm. In this case, the light absorption region of the photoelectric sensor device 113 is mainly concentrated in the ultraviolet-blue region, and the photoelectric sensor device 113 has a blue light transmittance of > 70% and a red and green light transmittance of > 90%, thereby realizing transparent sensitization in the visible light range.
Further, the photoelectric sensing structure 11 further includes a first planarization layer 114 and a first encapsulation layer 115, wherein the first planarization layer 114 is disposed on a side of the photoelectric sensing device 113 away from the second substrate 111, and the first encapsulation layer 115 is disposed on a side of the first planarization layer 114 away from the second substrate 111. The first Encapsulation layer 115 may adopt TFE (Thin-Film Encapsulation). The material of the first planarizing layer 114 is an organic resin material, and the first planarizing layer 114 can improve the problem that the dark current of the photoelectric sensing device 113 is high.
Further, the second thin film transistor 112 further includes a passivation layer 1126, the passivation layer 1126 is disposed on a side of the interlayer dielectric layer 1125 away from the second substrate 111, and a material of the passivation layer 1126 may be an inorganic film layer.
Specifically, the structure of the first thin film transistor 102 is similar to that of the second thin film transistor 112, and includes a semiconductor layer, a first gate insulating layer, a first gate, a second gate insulating layer, a second gate, an interlayer dielectric layer, a passivation layer, and a source/drain metal layer, where the specific positions of the layers may refer to the description of the second thin film transistor 112, which is the prior art, and therefore, the description thereof is omitted here.
The panel main body 10 further includes a second planarization layer 103 and a pixel defining layer 106, the second planarization layer 103 covers one side of the first thin film transistor 102 away from the first substrate 101, the anode 104 is disposed on one side of the second planarization layer 103 away from the first substrate 101, and the anode 104 is electrically connected to the source and drain metal layers of the first thin film transistor 102 through a via hole penetrating through the second planarization layer 103; the pixel defining layer 106 defines a plurality of pixel openings, and the light emitting device 105 is disposed in the pixel openings; the panel body 10 further includes a second encapsulation layer 107, the second encapsulation layer 107 is disposed on a side of the pixel defining layer 106 and the light emitting device 105 away from the first substrate 101, and in the cutout 101b, and the second encapsulation layer may adopt a stacked structure of a first inorganic encapsulation layer 1071, an organic encapsulation layer 1072, and a second inorganic encapsulation layer 1073.
In an embodiment, with continuing reference to fig. 1, fig. 3 is similar to fig. 1, the photoelectric sensing device 113 employs a bottom gate thin film transistor, and fig. 3 is different from fig. 1 in that the photoelectric sensing structure 11 further includes a first protection layer 1133 and a second protection layer 1134, and the first electrode layer 1130 is disposed at the same layer as the first gate 1122 or the second gate 1124; the active layer 1131 is disposed on a side of the second gate insulating layer 1123 away from the second substrate 111; the second electrode layer 1132 is disposed on a side of the active layer 1131 away from the second substrate 111, and the first protective layer 1133 is disposed in a gap between the first pole 1132a and the second pole 1132 b; the second protection layer 1134 covers the active layer 1131 and the first protection layer 1133 on the side away from the second substrate 111.
In an embodiment, referring to fig. 3, fig. 3 is similar to fig. 1, the photoelectric sensing device 113 in fig. 3 also adopts a bottom gate thin film transistor, and the first electrode layer 1130 is disposed on the same layer as the first gate 1122 or the second gate 1124; the second electrode layer 1132 is arranged on one side of the second gate insulating layer 1123 away from the second substrate 111; fig. 3 is different from fig. 1 in that the active layer 1131 is disposed in a gap between the first pole 1132a and the second pole 1132 b; the photo-sensing structure 11 further includes a second protection layer 1134, and the second protection layer 1134 covers the second electrode layer 1132 and the side of the active layer 1131 away from the second substrate 111.
In an embodiment, referring to fig. 4, fig. 4 is similar to fig. 1, and fig. 4 is different from fig. 1 in that the photoelectric sensing device 113 in fig. 4 employs a top gate type thin film transistor, specifically, the photoelectric sensing structure 11 further includes a first protective layer 1133 and a second protective layer 1134, and the active layer 1131 is disposed on a side of the second gate insulating layer 1123 away from the second substrate 111; the second electrode layer 1132 is arranged on one side of the active layer 1131 far away from the second substrate 111; the first protective layer 1133 is disposed in a gap between the first pole 1132a and the second pole 1132 b; the second protective layer 1134 covers the second electrode layer 1132 and the first protective layer 1133 at a side away from the second substrate 111; the first electrode layer 1130 is disposed on a side of the second protective layer 1134 away from the second substrate 111.
In an embodiment, referring to fig. 5, fig. 5 is similar to fig. 4, the photoelectric sensing device 113 in fig. 5 also adopts a top gate type thin film transistor, and fig. 5 is different from fig. 4 in that the photoelectric sensing structure 11 further includes a second protection layer 1134, and the second electrode layer 1132 is disposed on a side of the second gate insulating layer 1123 away from the second substrate 111; the active layer 1131 is disposed in a gap between the first pole 1132a and the second pole 1132 b; the second protective layer 1134 covers the second electrode layer 1132 and the side of the active layer 1131 away from the second substrate 111; the first electrode layer 1130 is disposed on a side of the second protective layer 1134 away from the second substrate 111.
The panel main body 10 is directly fabricated on one side of the photo-electric sensing structure 11, that is, after the photo-electric sensing structure 11 is fabricated, the film layers of the panel main body 10 are directly fabricated on the first planarization layer 114 of the photo-electric sensing structure 11, and the transparent display panel 100 fabricated by the fabrication method has a high integration level.
In an embodiment, referring to fig. 6, the difference between fig. 6 and fig. 1 is that the transparent display panel 100 further includes an optical adhesive assembly layer 12, the optical adhesive assembly layer 12 is disposed between the panel main body 10 and the photoelectric sensing structure 11, and the optical adhesive assembly layer 12 is a transparent adhesive layer. It can be understood that, by assembling the panel main body 10 and the photoelectric sensing structure 11 into an integral structure through the optical adhesive assembling layer 12, a large-sized display panel can be manufactured; moreover, the panel main body 10 and the photoelectric sensing structure 11 are separated, and the panel main body and the photoelectric sensing structure can be assembled together after being independently prepared, so that the process difficulty can be reduced, and the yield can be improved.
Similarly, the transparent display panel 100 in fig. 3 to 5 can also assemble the panel main body 10 and the photoelectric sensing structure 11 through the optical adhesive assembly layer 12, which is not described herein again.
Further, an embodiment of the present invention further provides a method for manufacturing a display panel, including the following steps:
providing a substrate 1110;
sequentially depositing a first PI layer 1111 and a first buffer layer 1112 on the substrate 1110;
forming a second thin film transistor 112 on the first buffer layer 1112;
forming a photo-sensor device 113 on the second thin film transistor 112;
depositing a first planarization layer 114 and a first encapsulation layer 115 over the photo-sensing device 113;
depositing a second PI layer 1010 and a second buffer layer 1011 on the first planarization layer 114;
forming a first thin film transistor 102 on the second buffer layer 1011;
forming a pixel defining layer 106 and a light emitting device 105 on the first thin film transistor 102;
forming a cutout hole 101b penetrating the panel body 10; and
a second encapsulation layer 107 is deposited on the pixel defining layer 106 and the light emitting device 105, and within the cutout 101 b.
It should be noted that, in the above-described manufacturing method of the transparent display panel 100, after the photoelectric sensing structure 11 is formed, the panel main body 10 is directly manufactured on the first planarization layer 114 of the photoelectric sensing structure 11, and of course, after the photoelectric sensing structure 11 and the panel main body 10 are respectively formed, the photoelectric sensing structure 11 and the panel main body 10 may be assembled into the transparent display panel 100 through the optical adhesive assembling layer 12, and during assembly, the photoelectric sensing device 113 of the photoelectric sensing structure 11 should be arranged corresponding to the light-transmitting region 10b of the panel main body 10.
Referring to fig. 7, an embodiment of the present invention further provides a transparent display device, where the transparent display device includes the transparent display panel 100 and a protective cover 200 in the above embodiment, and the protective cover 200 is disposed on a side of the transparent display panel 100 away from the photoelectric sensing structure 11; the specific structure of the transparent display panel 100 has been described in detail above, and therefore, the detailed description thereof is omitted.
The specific type of the transparent display device is not particularly limited, and any transparent display device commonly used in the art may be used, specifically, for example, an OLED display, a mobile device such as a mobile phone, a wearable device such as a watch, a VR device, and the like.
Specifically, the protective cover 200 is a transparent protective cover, and optionally, the protective cover 200 may be an ultra-thin glass cover.
The beneficial effects are that: according to the transparent display panel and the transparent display device provided by the embodiment of the invention, the photoelectric sensing structure is arranged on one side of the panel main body, which is far away from the first substrate, and comprises the second thin film transistor and the photoelectric sensor part which are electrically connected, the photoelectric sensor part is arranged on one side of the second thin film transistor, which is far away from the second substrate, and the photoelectric sensor is arranged corresponding to the light-transmitting area of the panel main body, so that the light-transmitting area can be used for carrying out light sensing, the whole-surface optical light sensing of the transparent display device is realized, the functions of safety identification, biological sensing, optical compensation, light energy collection and the like can be added, the application scene of the transparent display device is enriched, and the application function diversification is promoted.
In summary, although the present invention has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, therefore, the scope of the present invention shall be determined by the appended claims.
Claims (10)
1. A transparent display panel, comprising:
the panel comprises a panel main body and a plurality of pixel units, wherein the panel main body comprises a first substrate and a plurality of pixel units arranged on the first substrate, each pixel unit comprises a luminous area and a light-transmitting area, the luminous area is provided with a first thin film transistor and a luminous device which are electrically connected, and the luminous device is arranged on one side, far away from the first substrate, of the first thin film transistor; and
the photoelectric sensing structure is arranged on one side, away from the first substrate, of the panel body and comprises a second substrate, a second thin film transistor and a photoelectric sensing device, wherein the second thin film transistor and the photoelectric sensing device are arranged on one side, close to the first substrate, of the second substrate and are electrically connected, the photoelectric sensing device is arranged on one side, away from the second substrate, of the second thin film transistor, and the photoelectric sensing device and the light transmitting area are correspondingly arranged.
2. The transparent display panel according to claim 1, wherein the panel main body is formed with a cutout in the light-transmitting region, the cutout penetrating the panel main body, and the photoelectric sensor is provided corresponding to the cutout.
3. The transparent display panel according to claim 1 or 2, wherein the second thin film transistor comprises:
the semiconductor layer is arranged on one side, close to the first substrate, of the second substrate;
the first grid insulating layer covers one side of the semiconductor layer, which is far away from the second substrate;
the first grid electrode is arranged on one side, far away from the second substrate, of the first grid electrode insulating layer;
the second grid electrode insulating layer covers one side of the first grid electrode, which is far away from the second substrate;
the second grid electrode is arranged on one side, far away from the second substrate, of the second grid electrode insulating layer;
the interlayer dielectric layer covers one side of the second grid electrode, which is far away from the second substrate; and
the source drain metal layer is arranged on one side, far away from the second substrate, of the interlayer dielectric layer;
the photoelectric sensing device comprises a first electrode layer, an active layer and a second electrode layer, the second electrode layer and the source and drain electrode metal layer are arranged on the same layer, and one of a first electrode and a second electrode of the second electrode layer is electrically connected with the source and drain electrode metal layer.
4. The transparent display panel according to claim 3, wherein the material of the active layer is a high transmittance semiconductor material having photosensitive characteristics; the first electrode layer is a transparent electrode.
5. The transparent display panel according to claim 4,
the first electrode layer and the first grid or the second grid are arranged on the same layer;
the active layer is arranged on one side, far away from the second substrate, of the second gate insulating layer;
the second electrode layer is arranged on one side, far away from the second substrate, of the active layer;
wherein the photoelectric sensing structure further comprises:
a first protective layer disposed in a gap between the first pole and the second pole; and
and the second protective layer covers the active layer and one side of the first protective layer, which is far away from the second substrate.
6. The transparent display panel according to claim 4,
the first electrode layer and the first grid or the second grid are arranged on the same layer;
the second electrode layer is arranged on one side, far away from the second substrate, of the second gate insulating layer;
the active layer is disposed in a gap between the first pole and the second pole;
wherein the photoelectric sensing structure further comprises:
and the second protective layer covers one side of the second electrode layer and one side of the active layer, which are far away from the second substrate.
7. The transparent display panel according to claim 4,
the active layer is arranged on one side, far away from the second substrate, of the second gate insulating layer;
the second electrode layer is arranged on one side, far away from the second substrate, of the active layer;
wherein the photoelectric sensing structure further comprises:
a first protective layer disposed in a gap between the first pole and the second pole; and
the second protective layer covers the second electrode layer and one side, far away from the second substrate, of the first protective layer;
the first electrode layer is arranged on one side, far away from the second substrate, of the second protective layer.
8. The transparent display panel according to claim 4,
the second electrode layer is arranged on one side, far away from the second substrate, of the second gate insulating layer;
the active layer is disposed in a gap between the first pole and the second pole;
wherein the photoelectric sensing structure further comprises:
the second protective layer covers one side, far away from the second substrate, of the second electrode layer and the active layer;
the first electrode layer is arranged on one side, far away from the second substrate, of the second protective layer.
9. The transparent display panel of claim 1, further comprising an optical adhesive assembly layer disposed between the panel body and the photoelectric sensing structure, wherein the optical adhesive assembly layer is a transparent adhesive layer.
10. A transparent display device comprising the transparent display panel according to any one of claims 1 to 9;
and the protective cover plate is arranged on one side of the transparent display panel, which is far away from the photoelectric sensing structure.
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