KR101396940B1 - Organic Thin Film Transistor for Electrophoretic Display device and method for fabricating the same - Google Patents

Abstract

The present invention relates to an organic thin film transistor and a method of manufacturing the same. A source electrode and a drain electrode formed on the plastic substrate; An organic semiconductor layer, an organic insulating layer, and a first gate electrode stacked on top of the source electrode and the drain electrode and on a plastic substrate therebetween; A protective layer formed on the plastic substrate including the organic semiconductor layer, the organic insulating layer, and the first gate electrode, and exposing a portion of the first gate electrode and the drain electrode; A second gate electrode formed on the passivation layer and electrically connected to the first gate electrode and the drain electrode, and a pixel electrode connection pattern; And a pixel electrode electrically connected to the pixel electrode connection pattern.

Organic semiconductor, buffer layer, photoacryl, pixel electrode, electrophoretic display element

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic thin film transistor (TFT) and an electrophoretic display device,

The present invention relates to an organic thin film transistor and a manufacturing method thereof, and more particularly, to an organic thin film transistor applicable to an electrophoretic display device and a manufacturing method thereof.

Semiconductor electronic devices are used as basic unit elements and components essential in all electronic products such as industrial devices, home appliances, computers, and communication devices in all industries, households and general lives of modern society.

The development and development of transistor devices, one of the core technologies of such semiconductor devices, have been carried out. Most of these transistor devices use silicon, which is an inorganic semiconductor.

Such silicones are inherently unbreakable, fragile, and expensive to fabricate as devices.

These characteristics are likely to be obstacles to achieving the accessibility and portability of information and communications required by future society.

Therefore, in order to carry out a large amount of information communication in a mobility manner as well as a simple voice, it is necessary to have a device which is strong against bending or impact, which is likely to occur during the movement, and should be light to avoid inconvenience.

In order to satisfy such needs, it is advantageous to use plastic from the substrate to the semiconductor element.

On the other hand, in the case of a liquid crystal display device, which is one of the key fields in the field of information and communication, which is the most studied information display device, glass is used as a substrate, and a research for replacing this with a light- It is actively proceeding.

Therefore, it is necessary to replace the organic semiconductor transistor which can bend with a transistor made of a conventional silicon material, and research on plastic display using plastic as a substrate in a liquid crystal display device, an organic electroluminescence display and the like is being researched.

Since smart cards, electronic paper, electronic books, etc. basically use plastic substrates, development of organic thin film transistors that can easily fabricate transistors on plastic is essential.

Conventionally, an organic thin film transistor uses a conductive polymer material as an active layer, and research on this has continued in recent years.

Recently, a lot of research is being carried out all over the world, and the organic thin film transistor is almost the same in structure as a thin film transistor using silicon.

However, in the fabrication process, the organic thin film transistor is advantageous in that it is simpler and less expensive than a thin film transistor using silicon.

From this point of view, a method of manufacturing an organic thin film transistor according to the related art will be described with reference to FIG.

1 is a cross-sectional view of an organic thin film transistor for explaining an organic thin film transistor manufacturing method according to the prior art.

1, a conventional organic thin film transistor includes a plastic substrate 11, a source electrode 13 and a drain electrode 15 formed on the plastic substrate 11 and spaced apart from each other by a predetermined distance, An organic semiconductor layer 17 formed on the surface of the plastic substrate 11 including the source electrode 13 and the drain electrode 15; a gate insulating film 19 formed on the organic semiconductor layer 17; And a gate electrode 21 formed on the insulating film 19 and positioned above the channel region between the source electrode 13 and the drain electrode 15. [

Further, in order to construct a lower array substrate of a display device using the organic thin film transistor having the above structure, for example, an electrophoretic display device as a display device, a gate insulating film (not shown) including the gate electrode 21 of the organic thin film transistor And a pixel electrode 25 formed on the passivation layer 23 and electrically connected to the drain electrode 15 through a contact hole (not shown) .

A method for fabricating an organic thin film transistor according to the related art will now be described with reference to FIG.

As shown in FIG. 1, a conductive material is deposited on a plastic substrate 11 and selectively patterned through a photolithography process and an etching process to form source electrodes 13 spaced apart from each other by a predetermined distance, for example, And the drain electrode 15 are formed.

An organic semiconductor layer 17 made of an organic material is formed on the surface of the plastic substrate 11 including the source electrode 13 and the drain electrode 15. At this time, the organic semiconductor layer 17 is used as an active layer of the device.

Then, a gate insulating film 19 is deposited on the organic semiconductor layer 17 as an inorganic material.

Next, a gate conductive material is deposited on the gate insulating layer 19, and then selectively patterned through a photolithography process and an etching process to form a gate insulating layer 19 located above the channel region between the source electrode 13 and the drain electrode 15 The gate electrode 21 is formed to complete the fabrication of the organic thin film transistor.

Next, in order to form a lower array substrate such as a display device using the organic thin film transistor manufactured as described above, for example, a display device or an electrophoretic display device, the gate electrode 21 of the organic thin film transistor A protective film 23 is deposited on the gate insulating film 19 including the gate insulating film 19.

Then, the protective film 23 is selectively patterned through a photolithography process and an etching process to form a contact hole (not shown) exposing a part of the drain electrode 15.

Subsequently, a conductive material for forming a gate is deposited on the protective film 23 including the contact hole (not shown), and selectively patterned through a photolithography process and an etching process to be electrically connected to the drain electrode 15 The pixel electrode 25 is formed to complete the process of manufacturing the lower array substrate of the display device.

However, as described above, the organic thin film transistor and the manufacturing method according to the related art have the following problems.

According to the organic thin film transistor and the manufacturing method of the related art, since the organic semiconductor layer of a plurality of organic thin film transistors is used without additional patterning, current is leaked to the adjacent organic thin film transistor when each organic thin film transistor is operated, There is a problem of reducing performance.

Therefore, when the conventional organic thin film transducer is applied to a display device, that is, a plurality of display devices using a plastic substrate, the performance of the organic thin film transistor is deteriorated to deteriorate the characteristics of the display device.

It is an object of the present invention to provide an organic thin film transistor which is suitable for a display device to which a plastic substrate is applied by minimizing a decrease in electrical characteristics of the organic thin film transistor, And a method for manufacturing the same.

It is another object of the present invention to provide an electrophoretic display device using an organic thin film transducer and a method of manufacturing the same.

According to an aspect of the present invention, there is provided an organic thin film transistor comprising: a plastic substrate; A source electrode and a drain electrode formed on the plastic substrate; An organic semiconductor layer, an organic insulating layer, and a first gate electrode stacked on top of the source electrode and the drain electrode and on a plastic substrate therebetween; A protective layer formed on the plastic substrate including the organic semiconductor layer, the organic insulating layer, and the first gate electrode, and exposing a portion of the first gate electrode and the drain electrode; A second gate electrode formed on the passivation layer and electrically connected to the first gate electrode and the drain electrode, and a pixel electrode connection pattern; And a pixel electrode electrically connected to the pixel electrode connection pattern.

According to an aspect of the present invention, there is provided a method of fabricating an organic thin film transistor, including: forming a source electrode and a drain electrode on a plastic substrate; Depositing an organic semiconductor layer, an organic insulating film, and a first gate electrode on the plastic substrate between the source electrode and the drain electrode, and between the drain electrode and the drain electrode; Forming a protective film exposing a portion of the first gate electrode and the drain electrode on a plastic substrate including the laminated organic semiconductor layer, the organic insulating film, and the first gate electrode; Forming a pixel electrode connection pattern and a second gate electrode electrically connected to the first gate electrode and the drain electrode on the passivation layer; And forming a pixel electrode electrically connected to the pixel electrode connection pattern.

According to an aspect of the present invention, there is provided a method of fabricating an electrophoretic display device using an organic thin film transistor, the method comprising: forming a source electrode and a drain electrode on a plastic substrate; Depositing an organic semiconductor layer, an organic insulating layer and a first gate electrode on the upper portion of the source electrode and the drain electrode and on the plastic substrate therebetween; Forming a protective film exposing a portion of the first gate electrode and the drain electrode on a plastic substrate including the laminated organic semiconductor layer, the organic insulating film, and the first gate electrode; Forming a pixel electrode connection pattern and a second gate electrode electrically connected to the first gate electrode and the drain electrode on the passivation layer; Forming a pixel electrode electrically connected to the pixel electrode connection pattern; And forming an electrophoretic film on the plastic substrate including the pixel electrode.

The organic thin film transistor and the manufacturing method thereof according to the present invention have the following effects.

INDUSTRIAL APPLICABILITY The organic thin film transistor and the method of manufacturing the same according to the present invention can fabricate a display device such as an electrophoretic display device by fabricating an organic thin film transistor on a plastic substrate, thereby realizing a flexible display.

In addition, since the organic semiconductor layer of a plurality of organic thin film transistors is used by patterning, leakage of current to the adjacent organic thin film transistor is suppressed when the organic thin film transistor is operated, so that the performance of the organic thin film transistor can be maintained.

Accordingly, the present invention can be applied to a variety of display devices by reducing the performance of such an organic thin film transistor when applied to a display device using an organic thin film transporter, that is, a plurality of display devices using a plastic substrate.

Hereinafter, an organic thin film transistor and a method of manufacturing the same according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings.

2 is a cross-sectional view of an organic thin film transistor according to the present invention.

3A to 3F are cross-sectional views illustrating a method of manufacturing an organic thin film transistor according to the present invention.

As shown in FIG. 2, the organic thin film transistor according to the present invention includes a plastic substrate 101 divided into a thin film transistor region and a capacitor region; A source electrode 107 and a drain electrode 109 formed on the plastic substrate 101 and separated by a predetermined distance; An organic semiconductor pattern 113, a first organic insulating film 115 and a first gate electrode pattern 117 stacked on the surface of the plastic substrate 101 including the source electrode 107 and the drain electrode 109; A first protective film 119 and a second protective film 121 formed on a plastic substrate 101 including the organic semiconductor pattern 113, the first organic insulating film 115 and the first gate electrode pattern 117; A second gate electrode pattern 125 and an electrode connection pattern 127 formed on the second protective layer 121 and electrically connected to the first gate electrode 117 and the drain electrode 109; And a pixel electrode 131 formed on the electrode connection pattern 127.

Here, on the plastic substrate 101, an overcoat layer 103 and a buffer layer 105 made of an inorganic material such as SiNx are laminated.

In addition, the pixel electrode 131 is formed over the entire region of the organic thin film transistor and the capacitor region. At this time, an interlayer insulating layer 129 is formed between the pixel electrode 131 and the second gate electrode pattern 125 located in the organic thin film transistor region.

The capacitor lower electrode 111 is formed at the same time as the source electrode 107 and the drain electrode 109 in the capacitor region of the plastic substrate 101. The electrode connection pattern 127 located in the capacitor region And a part thereof is used as the upper electrode of the capacitor.

The method of fabricating an organic thin film transistor according to the present invention will now be described with reference to FIGS. 3A to 3F.

3A, an overcoat layer 103 is deposited on a plastic substrate 101 made of a plastic material and is cured. Then, an overcoat layer 103 is formed on the overcoat layer 103 A buffer layer 105 made of an inorganic material such as SiNx is deposited.

Next, a metal material for forming source / drain electrodes is deposited on the buffer layer 105, and the metal material layer is selectively patterned through a photolithography process and an etching process using a first mask (not shown) A source electrode 107 and a drain electrode 109 are formed. At this time, when the source electrode 107 and the drain electrode 109 are formed, a capacitor lower electrode 111 is also formed in the capacitor region.

The photolithography process will be briefly described as follows.

Although not shown in the drawing, a photoresist film is first applied on the metal material layer, soft baking is performed, and then the photoresist film is exposed using a source / drain mask.

Then, a portion of the exposed photoresist film is developed and removed to form a first photoresist pattern. Then, the metal material layer is selectively etched using the first photoresist pattern as a mask to form a source electrode 107 and a drain electrode 109 do.

At this time, Au / Cr, Au / ITO (Indium Tin Oxide), Au / Mo, and Au / Ti are selected as the metal material.

After the first photoresist pattern (not shown) is removed, an organic semiconductor layer (not shown) made of organic material and an organic insulating layer (not shown) are formed on the buffer layer 105 including the source electrode 107 and the drain electrode 109 And a first gate metal layer (not shown) are sequentially stacked.

At this time, the first gate metal layer (not shown) may be formed of a metal material such as chromium (Cr), copper (Cu), molybdenum (Mo), aluminum (Al), aluminum alloy, tungsten At least one of them.

Also, pentacene or thiophene oligomer is used as the organic semiconductor.

Next, a photoresist film (not shown) is coated on the first gate metal layer (not shown), and then an exposure process and a development process are performed by a photolithography process technique using a second mask (not shown) Thereby forming a second photoresist pattern (not shown).

3B, the first gate metal layer (not shown) is selectively patterned by a wet etching process using the second photoresist pattern (not shown) as a mask to form a first gate electrode 117 do.

Subsequently, the organic insulating film (not shown) and the organic semiconductor layer (not shown) are selectively patterned by a dry etching process using the second photoresist pattern (not shown) as a mask to form the organic semiconductor pattern 113 and the organic insulating film Pattern 115 is formed.

3C, the second photoresist pattern (not shown) is removed and a plastic substrate (not shown) including the organic semiconductor pattern 113, the organic insulating film pattern 115 and the first gate electrode 117 A first protective layer 119 made of an organic material is sequentially deposited on the entire surface of the first protective layer 121 and the second protective layer 121. At this time, since the second protective layer 121 is formed of a photosensitive material such as photo acryl, it is necessary to apply a separate photoresist to apply the photolithography process.

Then, the second protective film 121 is selectively patterned by performing a photolithography process and an etching process using a third mask (not shown).

The first protective layer 119 is selectively patterned using the selectively patterned second protective layer 121 as a mask to expose a portion of the first gate electrode 117 and the drain electrode 109, And a contact hole 123a and a second contact hole 123b are formed.

Next, a conductive metal layer (not shown) is deposited on the second protective film 121 including the first contact hole 123a and the second contact hole 123b. At this time, the conductive metal layer may include at least one of metal materials such as Cu / Ti, AlNd, copper (Cu), molybdenum (Mo), aluminum (Al), aluminum alloy, tungsten .

Then, as shown in FIG. 3D, the photoresist layer is selectively patterned through a photolithography process and an etching process using a fourth mask (not shown) after the photoresist layer is coated on the conductive metal layer Thereby forming a photoresist pattern (not shown).

A second gate electrode 125 electrically connected to the first gate electrode 117 by selectively patterning the conductive metal layer (not shown) using the third photoresist pattern (not shown) as a mask, And a pixel electrode connection pattern 127 electrically connected to the electrode 109 is formed. At this time, the second protective layer 121 serves to prevent an electric field influence of the gate electrode when applied to an electrophoretic display device.

After the third photoresist pattern (not shown) is removed, a second passivation layer 121 including the second gate electrode 125 and the pixel electrode connection pattern 127 is coated with a photosensitive material such as photo- ).

Then, as shown in FIG. 3E, the gate protection layer pattern 129 is formed by selectively patterning the gate protection layer (not shown) through a photolithography process and an etching process using a fifth mask (not shown). At this time, the gate protection film pattern 129 exposes a part of the pixel electrode connection pattern 127.

Then, a transparent conductive material such as ITO or IZO is deposited on the gate protection layer 129 and the pixel electrode connection pattern 127.

Next, a photoresist layer is coated on the transparent conductive material layer, and then the photoresist layer is selectively patterned through a photolithography process and an etching process using a sixth mask (not shown) to form a fourth photoresist pattern (not shown).

3F, the pixel electrode 131 is formed by selectively patterning the transparent conductive material layer using the fourth photoresist pattern as a mask so as to be electrically connected to the pixel electrode connection pattern 127. As a result, Thereby completing the thin film transistor manufacturing process.

An electrophoretic display device using the organic thin film transistor manufactured as described above and a method of manufacturing the same will be described with reference to FIG.

4 is a cross-sectional view of an electrophoretic display device for explaining a method of manufacturing an electrophoretic display device using an organic thin film transistor according to the present invention.

As shown in FIG. 4, the electrophoretic display device using the organic thin film transistor according to the present invention includes a plastic substrate 101 divided into a thin film transistor region and a capacitor region; A source electrode 107 and a drain electrode 109 formed on the plastic substrate 101 and separated by a predetermined distance; An organic semiconductor pattern 113, a first organic insulating film 115 and a first gate electrode pattern 117 stacked on the surface of the plastic substrate 101 including the source electrode 107 and the drain electrode 109; A first protective layer 119 and a second protective layer 121 formed on the plastic substrate 101 including the organic semiconductor pattern 113, the first organic insulating layer 115 and the first gate electrode pattern 117; A second gate electrode pattern 125 and a pixel electrode connection pattern 127 formed on the second protective layer 121 and electrically connected to the first gate electrode 117 and the drain electrode 109; A pixel electrode 131 formed on the pixel electrode connection pattern 127; And an electrophoretic film 135 formed on the plastic substrate 101 including the pixel electrode 131.

Although not shown in the figure, an electrophoretic film 135 is laminated on a plastic substrate 101 applied to an electrophoretic display device having the above-described structure, and a transparent electrode or other electrode material layer An upper plate (not shown) made of a material is stacked to constitute an electrophoretic display element.

Here, on the plastic substrate 101, an overcoat layer 103 and a buffer layer 105 made of an inorganic material such as SiNx are laminated.

In addition, the pixel electrode 131 is formed over the entire region of the organic thin film transistor and the capacitor region. At this time, an interlayer insulating layer 129 is formed between the pixel electrode 131 and the second gate electrode pattern 125 located in the organic thin film transistor region.

The capacitor lower electrode 111 is formed at the same time as the source electrode 107 and the drain electrode 109 in the capacitor region of the plastic substrate 101. The electrode connection pattern 127 located in the capacitor region And a part thereof is used as the upper electrode of the capacitor.

The method of fabricating an organic thin film transistor according to the present invention will now be described with reference to FIGS. 3A to 3F and FIG.

3A, an overcoat layer 103 is deposited on a plastic substrate 101 made of a plastic material and cured. Then, SiNx and SiNx are deposited on the overcoat layer 103, A buffer layer 105 made of the same inorganic material is deposited.

Next, a metal material for forming source / drain electrodes is deposited on the buffer layer 105, and the metal material layer is selectively patterned through a photolithography process and an etching process using a first mask (not shown) A source electrode 107 and a drain electrode 109 are formed. At this time, when the source electrode 107 and the drain electrode 109 are formed, a capacitor lower electrode 111 is also formed in the capacitor region.

The photolithography process will be briefly described as follows.

Although not shown in the drawing, a photoresist film is first applied on the metal material layer, soft baking is performed, and then the photoresist film is exposed using a source / drain mask.

Then, a portion of the exposed photoresist film is developed and removed to form a first photoresist pattern. Then, the metal material layer is selectively etched using the first photoresist pattern as a mask to form a source electrode 107 and a drain electrode 109 do.

At this time, Au / Cr, Au / ITO (Indium Tin Oxide), Au / Mo, and Au / Ti are selected as the metal material.

After the first photoresist pattern (not shown) is removed, an organic semiconductor layer (not shown) made of organic material and an organic insulating layer (not shown) are formed on the buffer layer 105 including the source electrode 107 and the drain electrode 109 And a first gate metal layer (not shown) are sequentially stacked.

At this time, the first gate metal layer (not shown) may be formed of a metal material such as chromium (Cr), copper (Cu), molybdenum (Mo), aluminum (Al), aluminum alloy, tungsten As shown in FIG.

Next, a photoresist film (not shown) is coated on the first gate metal layer (not shown), and then an exposure process and a development process are performed by a photolithography process technique using a second mask (not shown) Thereby forming a second photoresist pattern (not shown).

Referring to FIG. 3B, the first gate metal layer (not shown) is selectively patterned by a wet etching process using the second photoresist pattern (not shown) as a mask to form a first gate electrode 117.

Subsequently, the organic insulating film (not shown) and the organic semiconductor layer (not shown) are selectively patterned by a dry etching process using the second photoresist pattern (not shown) as a mask to form the organic semiconductor pattern 113 and the organic insulating film Pattern 115 is formed.

3C, the second photoresist pattern (not shown) is removed and a plastic substrate 101 including the organic semiconductor pattern 113, the organic insulating film pattern 115, and the first gate electrode 117 is formed. A first protective film 119 made of an organic material is sequentially deposited on the entire surface of the second protective film 121. At this time, since the second protective layer 121 is formed of a photosensitive material such as photo acryl, it is necessary to apply a separate photoresist to apply the photolithography process.

Next, the second protective film 121 is selectively patterned by performing a photolithography process and an etching process using a third mask (not shown).

The first protective layer 119 is selectively patterned using the selectively patterned second protective layer 121 as a mask to expose a portion of the first gate electrode 117 and the drain electrode 109, And a contact hole 123a and a second contact hole 123b are formed.

Next, a conductive metal layer (not shown) is deposited on the second protective film 121 including the first contact hole 123a and the second contact hole 123b. At this time, the conductive metal layer may include at least one of metal materials such as Cu / Ti, AlNd, copper (Cu), molybdenum (Mo), aluminum (Al), aluminum alloy, tungsten .

3D, a photoresist layer is coated on the conductive metal layer (not shown), and then the photoresist layer is selectively patterned through a photolithography process and an etching process using a fourth mask (not shown) to form a third photoresist pattern (Not shown).

A second gate electrode 125 electrically connected to the first gate electrode 117 by selectively patterning the conductive metal layer (not shown) using the third photoresist pattern (not shown) as a mask, And a pixel electrode connection pattern 127 electrically connected to the electrode 109 is formed. At this time, the second protective layer 121 serves to prevent an electric field influence of the gate electrode when applied to an electrophoretic display device.

After the third photoresist pattern (not shown) is removed, a second passivation layer 121 including the second gate electrode 125 and the pixel electrode connection pattern 127 is coated with a photosensitive material such as photo- ).

Referring to FIG. 3E, a gate protection film pattern 129 is formed by selectively patterning the gate protection film (not shown) through a photolithography process and an etching process using a fifth mask (not shown). At this time, the gate protection film pattern 129 exposes a part of the pixel electrode connection pattern 127.

Then, a transparent conductive material such as ITO or IZO is deposited on the gate protection layer 129 and the pixel electrode connection pattern 127.

Next, a photoresist layer is coated on the transparent conductive material layer, and then the photoresist layer is selectively patterned through a photolithography process and an etching process using a sixth mask (not shown) to form a fourth photoresist pattern (not shown).

Referring to FIG. 3F, the pixel electrode 131 is formed by selectively patterning the transparent conductive material layer using the fourth photoresist pattern as a mask so as to be electrically connected to the pixel electrode connection pattern 127, The manufacturing process is completed.

4, an electrophoretic film 135 is laminated on a plastic substrate 101 including the pixel electrode 131. [

The electrophoretic film 135 forms a capsule 133 with an electronic ink in a polymer binder. The electronic ink distributed in the capsule 133 includes a white ink 133a and a black ink 133b.

The white ink 133a and the black ink 133b distributed in the electrophoretic film 135 have positive and negative charge characteristics, respectively. That is, the white ink 133a is positively charged and the black ink 133b is negatively charged.

In addition, the electrophoretic film 135 is stacked on the plastic substrate 101 by a contact layer (not shown) as a unit.

Therefore, since the pixel electrode portion of the uppermost layer exists in a sufficient area even after the patterning, the electrophoretic film 135 does not have much difficulty in bonding.

Although not shown in the drawing, a common wiring (not shown) or other electrode material made of ITO, which is a transparent material, is formed on the electrophoretic film 135 to complete the electrophoretic display device.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments.

Therefore, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concept of the present invention defined in the following claims are also within the scope of the present invention.

1 is a cross-sectional view of an organic thin film transistor for explaining an organic thin film transistor manufacturing method according to the prior art.

2 is a cross-sectional view of an organic thin film transistor according to the present invention.

3A to 3F are cross-sectional views illustrating a method of manufacturing an organic thin film transistor according to the present invention.

4 is a cross-sectional view of an electrophoretic display device to which an organic thin film transistor according to the present invention is applied.

DESCRIPTION OF THE REFERENCE SYMBOLS

101: plastic substrate 103: overcoat layer

105: buffer layer 107: source electrode

109: drain electrode 111: capacitor lower electrode

113: organic semiconductor pattern 115: organic insulating film pattern

117: first gate electrode 119: first protective film

121: second protective film 125: second gate electrode

127: pixel electrode connection pattern 129: gate protection film

131: pixel electrode

Claims (22)

A plastic substrate; A source electrode and a drain electrode formed on the plastic substrate; An organic semiconductor layer, an organic insulating layer, and a first gate electrode stacked on top of the source electrode and the drain electrode and on a plastic substrate therebetween; A protective layer formed on the plastic substrate including the organic semiconductor layer, the organic insulating layer, and the first gate electrode, and exposing a portion of the first gate electrode and the drain electrode; A second gate electrode formed on the passivation layer and electrically connected to the first gate electrode and the drain electrode, and a pixel electrode connection pattern; And And a pixel electrode electrically connected to the pixel electrode connection pattern. The organic thin film transistor according to claim 1, wherein an overcoat layer and a buffer layer are formed between the plastic substrate and the source / drain electrodes. The organic thin film transistor according to claim 1, wherein the organic semiconductor is pentacene or a thiophene oligomer. The semiconductor device according to claim 1, wherein the first gate electrode is formed of a metal material such as chromium (Cr), copper (Cu), molybdenum (Mo), aluminum (Al), aluminum alloy, tungsten The organic thin film transistor comprising: The method as claimed in claim 1, wherein the second gate electrode and the pixel electrode connection pattern are formed of Cu / Ti, AlNd, copper (Cu), molybdenum (Mo), aluminum (Al), aluminum alloy, tungsten Ti, and the like. ≪ RTI ID = 0.0 > 11. < / RTI > The organic thin film transistor of claim 1, wherein the passivation layer comprises a double passivation layer formed of different materials. The organic thin film transistor of claim 6, wherein the first passivation layer is an organic material and the second passivation layer is a photo-sensitive photosensitive material. Forming a source electrode and a drain electrode on the plastic substrate; Depositing an organic semiconductor layer, an organic insulating layer and a first gate electrode on the upper portion of the source electrode and the drain electrode and on the plastic substrate therebetween; Forming a protective film exposing a portion of the first gate electrode and the drain electrode on a plastic substrate including the laminated organic semiconductor layer, the organic insulating film, and the first gate electrode; Forming a pixel electrode connection pattern and a second gate electrode electrically connected to the first gate electrode and the drain electrode on the passivation layer; And And forming a pixel electrode electrically connected to the pixel electrode connection pattern. 9. The method of claim 8, further comprising forming an overcoat layer and a buffer layer between the plastic substrate and the source / drain electrodes. 9. The method of claim 8, wherein the organic semiconductor is pentacene or a thiophene oligomer. The method according to claim 9, wherein the first gate electrode is formed of a metal material such as Cr, Cu, Mo, Al, Al alloy, tungsten, Wherein the organic thin film transistor is formed on the substrate. The organic light emitting display according to claim 8, wherein the second gate electrode and the pixel electrode connection pattern are formed of a material selected from the group consisting of Cu / Ti, AlNd, Cu, molybdenum, aluminum, aluminum alloy, tungsten Or Ti, or a metal material such as Ti. 9. The method of claim 8, wherein the passivation layer comprises a double passivation layer formed of different materials. 14. The method of claim 13, wherein the first passivation layer is an organic material and the second passivation layer is a photosensitive photoacid. 9. The method of claim 8, wherein the organic semiconductor layer, the organic insulating layer, and the first gate electrode are formed by a wet etching process and a dry etching process. Forming a source electrode and a drain electrode on the plastic substrate; Depositing an organic semiconductor layer, an organic insulating layer and a first gate electrode on the upper portion of the source electrode and the drain electrode and on the plastic substrate therebetween; Forming a protective film exposing a portion of the first gate electrode and the drain electrode on a plastic substrate including the laminated organic semiconductor layer, the organic insulating film, and the first gate electrode; Forming a pixel electrode connection pattern and a second gate electrode electrically connected to the first gate electrode and the drain electrode on the passivation layer; Forming a pixel electrode electrically connected to the pixel electrode connection pattern; And And forming an electrophoretic film on a plastic substrate including the pixel electrode. The method of claim 1, wherein the electrophoretic film is formed on the plastic substrate. 17. The method of claim 16, further comprising forming an overcoat layer and a buffer layer between the plastic substrate and the source / drain electrodes. 17. The method of claim 16, wherein the organic semiconductor is pentacene or a thiophene oligomer. The semiconductor device according to claim 16, wherein the first gate electrode is formed of a metal material such as chromium (Cr), copper (Cu), molybdenum (Mo), aluminum (Al), aluminum alloy, tungsten Wherein the organic thin film transistor is formed on the substrate. 17. The method of claim 16, wherein the second gate electrode and the pixel electrode connection pattern are formed of at least one of Cu / Ti, AlNd, Cu, Mo, Al, Al alloy, tungsten Ti, and the like. The method of claim 1, wherein the organic thin film transistor is formed of a metal material. 17. The organic thin film transistor according to claim 16, wherein the protective film is a double protective film composed of different materials, wherein the first protective film is an organic material and the second protective film is a photosensitive photo- Wherein the electrophoretic display element is formed on a substrate. 17. The method of claim 16, wherein the organic semiconductor layer, the organic insulating layer, and the first gate electrode are formed by a wet etching process and a dry etching process.

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