CN111463188A - 应用于功率转换器的封装结构 - Google Patents

应用于功率转换器的封装结构 Download PDF

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Publication number
CN111463188A
CN111463188A CN202010369001.9A CN202010369001A CN111463188A CN 111463188 A CN111463188 A CN 111463188A CN 202010369001 A CN202010369001 A CN 202010369001A CN 111463188 A CN111463188 A CN 111463188A
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Prior art keywords
power
electrode
power transistor
metal
package structure
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CN202010369001.9A
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English (en)
Inventor
方迟清
叶佳明
赵晨
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Hangzhou Silergy Semiconductor Technology Ltd
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Hangzhou Silergy Semiconductor Technology Ltd
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Priority to CN202010369001.9A priority Critical patent/CN111463188A/zh
Publication of CN111463188A publication Critical patent/CN111463188A/zh
Priority to TW110114295A priority patent/TWI779569B/zh
Priority to US17/243,949 priority patent/US11742268B2/en
Pending legal-status Critical Current

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Abstract

本发明提供了一种适用于功率变换器的封装结构，其中，第一功率晶体管和控制和驱动电路集成于同一颗晶片，可以更好地实现第一功率晶体管的高频开关动作，提高第一功率晶体管的工作频率，降低开关损耗。第二功率晶体管集成于独立的第二晶片中，第一晶片和第二晶片分立于封装结构中，对第二功率晶体管的控制和驱动动作不会对第一晶片产生干扰或者其他负面影响，提高了可靠性。第一晶片和第二晶片之间可以通过大面积的连接结构进行连接，实现了较低的互连电阻，提升了大电流处理能力。

Description

应用于功率转换器的封装结构
技术领域
本发明涉及半导体技术领域，更具体地，涉及一种应用于功率转换器的封装结构。
背景技术
功率变换器是一种将输入电压转换为恒定的输出电压或者输出电流的转换电路。根据输入电压和输出电压之间的大小关系，功率变换器可以设置为不同的功率拓扑结构，例如降压型，升压型或者升降压型。相同的是，功率变换器包括主功率开关和整流开关，以及电感和输出电容。四个基本器件之间不同的连接方式来获得不同的功率级拓扑结构。控制和驱动电路控制主功率开关工作在高频状态，根据输出电压的反馈信息，控制主功率开关的导通占空比，从而在输出端获得恒定的输出电压。
电子技术的发展，使得对小型化和集成化的要求越来越高。通过现有的制造工艺，可以将主功率开关、整流开关和控制和驱动电路分别制造，然后通过封装工艺将主功率开关、整流开关和控制和驱动电路封装于一颗芯片中。这样的方式，不可避免的芯片面积会比较大。另一种方式为将主功率开关、整流开关和控制和驱动电路全部集成，这样可以减小芯片的面积，但是对制造工艺的要求非常高。
发明内容
有鉴于此，本发明的目的在于提供一种能够兼顾小型化和制造工艺难度的新型的应用于功率变换器的封装结构。
根据本发明的一方面，提供一种应用于功率转换器的封装结构，包括：
第一晶片，至少包括第一功率晶体管和第一控制和驱动电路；
第二晶片，至少包括第二功率晶体管；
连接装置，用以在所述封装结构内部，通过所述连接装置将所述第一功率晶体管和第二功率晶体管依次串联耦接在所述封装结构的引线框架的高电平引脚和低电平引脚之间；
所述第一功率晶体管和所述第二功率晶体管的公共连接点通过低互连电阻的金属连接结构耦接至所述引线框架的输出引脚。
优选的，所述第二功率晶体管被配置为具有垂直电流流向的功率器件。
优选的，所述第一功率晶体管与所述高电平引脚之间的连接，所述第二功率晶体管与所述低电平引脚之间的连接，通过低互连电阻的金属连接结构或者通过堆叠式的直接连接方式来实现。
优选的，低互连电阻的金属连接结构被配置为片状的金属夹结构或者重布线金属结构。
优选的，所述第一功率晶体管的控制电极和第一功率电极和第二功率电极位于所述第一晶片的同一表面。
优选的，所述第二功率晶体管的第一功率电极和所述第二功率电极位于所述第二晶片的不同表面。
优选的，所述第一晶片和第二晶片并行排列。
优选的，所述连接装置包括金属夹结构，以通过焊接层与所述第一功率晶体管的第二功率电极和所述第二功率晶体管的第一功率电极电耦接，并连接至引线框架的相应引脚。
优选的，所述连接装置包括金属重布线结构，所述第一功率晶体管的第二电极和所述第二功率晶体管的第一电极，通过焊接工艺，与所述金属重布线层连接，并经由所述金属重布线结构连接至引线框架的相应引脚。
优选的，所述第一功率晶体管的第一功率电极和第二功率电极的电位区域位于所述第一晶片的相对两侧区域，所述第一功率晶体管的第二功率电极的电位区域位于靠近第二晶片的一侧。
优选的，所述连接装置包括低互连电阻的金属连接结构，以在所述封装结构内部将所述第二功率晶体管的第一功率电极和所述第一功率晶体管的第二功率电极进行连接，以容纳大电流和降低互连电阻。
优选的，所述低互连电阻的金属连接结构包括与所述第一功率晶体管的第二功率电极相连的第一部分和与所述第二功率晶体管的第一功率电极相连的第二部分，所述第一部分和第二部分相接触。
优选的，所述第一部分被配置为图案化的重布线金属结构，以将所述第一功率晶体管的第二功率电极引出。
优选的，所述第二部分被配置为金属夹结构。
优选的，所述图案化的重布线金属结构包括电气引线和指状结构；所述指状结构与电极引出结构相连接，所述电气引线与所述指状结构相连接，以将相应的电位引出。
优选的，其特征在于，所述图案化的重布线金属结构包括第一金属层，焊接结构和第二金属层；所述第一金属层的第一表面与相同电位的电极引出相连接，所述焊接结构与所述第一金属层的第二表面相连接，并将所述电极电位重新布设于第一晶片的相应区域；所述第二金属层的第一表面与所述焊接结构相连接，并通过第二表面与外部连接。
优选的，所述第一晶片和第二晶片堆叠排列。
优选的，所述第二晶片正装，所述第一晶片倒装，部分堆叠于所述第二晶片上方。
优选的，所述第一功率晶体管的第二功率电极区域和所述第二功率晶体管的第一功率电极区域沿所述封装结构的垂直方向重叠。
优选的，所述连接装置包括金属连接结构，其第一表面通过可焊接结构与所述第一功率晶体管的第二功率电极电连接，第二表面通过可焊接结构与所述第二功率晶体管的第一功率电极电连接，并通过所述金属连接结构连接至引线框架的相应引脚。
优选的，所述第一控制和驱动电路中的驱动电极通过金属连接结构连接至所述第二功率晶体管的控制电极，所述控制电极与所述第一功率电极位于同一表面。
优选的，所述金属连接结构配置为金属凸块或者金属重布线结构。
优选的，所述第一功率晶片的第一功率电极通过金属凸块或者金属重布线结构连接至引线框架的相应引脚。
优选的，所述第二功率晶体管的第一功率电极和所述第二功率电极位于所述第二晶片的同一表面。
优选的，所述第一功率晶体管与所述高电平引脚之间的连接，所述第二功率晶体管与所述低电平引脚之间的连接，以及所述第二功率晶体管的第一功率电极和所述第二功率电极之间的连接通过低互连电阻的金属连接结构或者通过堆叠式的直接连接方式来实现。
优选的，所述第二功率晶体管的控制电极与第一功率电极位于不同表面，所述第一控制和驱动电路中的驱动电极和所述第一功率电极通过金属连接结构连接至所述引线框架的同一引脚。
优选的，还包括塑封体，以包覆所述第一晶片，第二晶片，所述连接装置和引线框架，并将所述引脚部分裸露于所述塑封体外。
通过依据本发明的封装结构，第一功率晶体管和控制和驱动电路集成于同一颗晶片，可以更好地实现第一功率晶体管的高频开关动作，提高第一功率晶体管的工作频率，降低开关损耗。第二功率晶体管集成于独立的第二晶片中，第一晶片和第二晶片分立于封装结构中，对第二功率晶体管的控制和驱动动作不会对第一晶片产生干扰或者其他负面影响，提高了可靠性。第一晶片和第二晶片之间可以通过大面积的连接结构进行连接，实现了较低的互连电阻，提升了大电流处理能力。
附图说明
通过以下参照附图对本发明实施例的描述，本发明的上述以及其他目的、特征和优点将更为清楚，在附图中：
图1A所示的降压型功率变换器的原理图；
图1B所示为依据本发明第一实施例的应用于功率变换器的封装结构；
图1C所示为图1B所示的依据本发明应用于功率变换器的封装结构沿A——A’的第一示例剖面图；
图1D所示为图1B所示的依据本发明应用于功率变换器的封装结构沿A——A’的第二示例剖面图；
图2A所示为依据本发明第二实施例的应用于功率变换器的封装结构示意图；
图2B所示为图2A所示的依据本发明应用于功率变换器的封装结构沿B——B’的示例剖面图；
图3A所示为依据本发明一实施例的第一晶片的功率电极引出结构示意图；
图3B所示为图3A所示的第一晶片的功率电极引出结构沿C——C’的剖面图；
图4A所示为依据本发明另一实施例的第一晶片的功率电极引出结构示意图；
图4B所示的图4A所示的依据本发明实施例的第一晶片的功率电极引出结构沿轴线D——D’的剖面图。
具体实施方式
以下将参照附图更详细地描述本发明。在各个附图中，相同的元件采用类似的附图标记来表示。为了清楚起见，附图中的各个部分没有按比例绘制。此外，可能未示出某些公知的部分。
应当理解，在描述结构时，当将一层、一个区域称为位于另一层、另一个区域“上面”或“上方”时，可以指直接位于另一层、另一个区域上面，或者在其与另一层、另一个区域之间还包含其它的层或区域。并且，如果将结构翻转，该一层、一个区域将位于另一层、另一个区域“下面”或“下方”。
如果为了描述直接位于另一层、另一个区域上面的情形，本文将采用“A直接在B上面”或“A在B上面并与之邻接”的表述方式。在本申请中，“A直接位于B中”表示A位于B中，并且A与B直接邻接。
在下文中描述了本发明的许多特定的细节，例如结构、材料、尺寸、处理工艺和技术，以便更清楚地理解本发明。但正如本领域的技术人员能够理解的那样，可以不按照这些特定的细节来实现本发明。
本发明提供了一种适用于功率变换器的封装结构，包括：第一晶片，至少包括第一功率晶体管和第一控制和驱动电路；第二晶片，至少包括第二功率晶体管；连接装置，用以在所述封装结构内部，通过所述连接装置将所述第一功率晶体管和第二功率晶体管依次串联耦接在所述封装结构的引线框架的高电平引脚和低电平引脚之间；所述第一功率晶体管和所述第二功率晶体管的公共连接点通过低互连电阻的金属连接结构耦接至所述引线框架的输出引脚。
通过这种封装结构，第一方面，第一功率晶体管和控制和驱动电路集成于同一颗晶片，控制电极和驱动信号的连接可以直接通过晶片内部的连接结构进行，例如金属层等。因此不再需要类似现有技术中心的晶片外部的实现方式，例如金属打线方式，更甚者，或者是在封装外部的引脚连接的实现方式。这样的实现方式，可以更好地实现第一功率晶体管的高频开关动作，提高第一功率晶体管的工作频率，降低开关损耗。第二方面，第二功率晶体管集成于独立的第二晶片中，第一晶片和第二晶片分立于封装结构中，对第二功率晶体管的控制和驱动动作不会对第一晶片产生干扰或者其他负面影响，提高了可靠性。同时，当第二晶片仅作为第二功率晶体管时，晶片的面积可以做的更大，从而降低导通电阻，进一步的降低导通损耗。第三方面，所述第二功率晶体管被配置为具有垂直电流流向的功率器件。第二功率晶体管被配置为第一功率电极和第二功率电极之间的电流流向为垂直方向，例如，第二晶片可以为VDMOS晶体管，或者source down LDMOS晶体管。与第一晶片中的第一功率晶体管的类型不相同，例如，第一功率晶体管可以为LDMOS晶体管。不同类型的功率晶体管的选择，可以方便的在封装结构内部完成第一功率晶体管和第二功率晶体管相互之间的连接，并通过封装结构的引脚串联连接在高电位(例如输入电压源)和低电位(例如地电位)之间，抗干扰能力增强。
另一方面，第二功率晶体管的第一功率电极和第二功率电极也可以位于第二晶片的同一表面。
第一功率晶体管与高电平引脚之间的连接，第二功率晶体管与所述低电平引脚之间的连接，以及第二功率晶体管的第一功率电极和所述第二功率电极之间的连接通过低互连电阻的金属连接结构或者通过堆叠式的直接连接方式来实现。
以下以功率变换器为降压型功率级拓扑结构，以及主功率晶体管(第一功率晶体管)和整流功率晶体管(第二功率晶体管)为MOSFET晶体管为例来进行本实施例的说明。对应的，第一功率电极为MOSFET晶体管的漏极，第二功率电极为MOSFET晶体管的源极，控制电极为MOSFET晶体管的栅极。
参考图1A所示的降压型功率变换器的原理图。在降压型拓扑结构中，第一功率晶体管Q1的漏极接收输入电压Vin，第一功率晶体管Q1的源极和第二功率晶体管Q2的漏极相连接后与电感L的一端相连接，第二功率晶体管Q2的源极连接至地电位。控制和驱动电路5根据接收到的输出电压Vout的信息和基准电压信息Vref生成的主管驱动信号GH至第一功率晶体管Q1的栅极，进而控制第一功率晶体管Q1的开关动作，以及整流管驱动信号GL至第二功率晶体管Q2的栅极，进而控制第而功率晶体管Q2的开关动作。通过这种逐周期的高频控制，使得输出电压Vout维持为与基准电压Vref相一致。
参考图1B，所示为依据本发明第一实施例的应用于功率变换器的封装结构。
依据该实施例的封装结构包括：
第一晶片1，将主功率晶体管和控制和驱动电路单颗集成；其第一功率电极11(漏极)、第二功率电极12(源极)以及控制和驱动电极(13)均位于第一晶片的同一表面(上表面)上。
第二晶片2，将整流功率晶体管单颗集成；其第一功率电极21(漏极)和第二功率电极22(源极)位于第二晶片的不同表面上，使得流过第一功率电极21(漏极)和第二功率电极22(源极)的电流流向为垂直方向；这里，第一功率电极21(漏极)位于第二晶片的上表面，第二功率电极22(源极)位于第二晶片的下表面(图中未示出)；控制和驱动电极(13)可以位于第二晶片的上表面或者下表面。在本实施例中，控制和驱动电极(13)与第一功率电极21(漏极)均位于第二晶片的上表面。
引线框架，包括位于内部区域的基底31和位于外缘区域的引脚31。基底31用以给第一晶片1和第二晶片2提供机械支撑以及必要的电性连接。这里，第一晶片1和第二晶片2并行排列，均位于基底31的上表面上。
连接装置，用以在封装结构内部，将需要进行电性连接的不同电极进行连接。包括但不限于第一连接结构41和第二连接结构42。在降压型拓扑结构中，第一功率晶体管的漏极接收输入电压，第一功率晶体管的源极和第二功率晶体管的漏极相连接后与电感的一端相连接，第二功率晶体管的源极连接至地电位。
为了实现上述连接关系，第一功率晶体管的漏极通过第一连接结构41连接至相应的引脚32，引脚32用以接收输入电压源，从而实现了第一功率晶体管的漏极和输入电压源之间的连接通路。第一连接结构41配置为片状连接结构，具有较大的面积以及较低的导通电阻以容纳较大的电流。第一连接结构41可以为铜夹等结构，通过位于铜夹和第一功率晶体管的漏极区域的焊接层进行连接，并通过铜夹连接至对应的引线框架的引脚。
第一功率晶体管的源极和第二功率晶体管的漏极通过第二连接结构42相连接。位于第二晶片2的下表面的源极(图中未示出)，可以理解，通过另一导电连接结构连接至相应的引脚32。
如图1B所示，将第一晶片1的控制和驱动电极13和第一功率晶体管的电极(源极和漏极)位于同一表面(上表面)。布设控制和驱动电极13和第一功率晶体管的电极，使得第一功率晶体管的电极和控制和驱动电极13位于第一晶片1的上表面的相对两侧。当需要增加第一功率晶体管的性能时，例如耐压或者电流，可以沿着远离控制和驱动电极的方向衍生，方便拓展而不必受控制和驱动电极13的位置的影响，以及可以不改变原有控制和驱动电极13的位置。
在该实施例中，第二晶片2的控制电极23(栅极)和第一晶片1的控制和驱动电极13均位于远离基底31的一侧。因此，第一晶片1中的控制和驱动电路所产生的驱动信号GL对应的控制和驱动电极可以在封装结构内部，通过金属连接结构，例如键合引线，连接至第二晶片2的控制电极23。
参考图1C，所示为图1B所示的依据本发明应用于功率变换器的封装结构沿A——A’的第一示例剖面图。
在该示例中，第一功率晶体管的源极和第二功率晶体管的漏极通过第二连接结构42相连接。第二连接结构42被配置为铜夹结构42。第二晶片2上表面的漏极电极通过焊接层25与铜夹结构42相连接。第一晶片1上表面的源极电极通过焊接层15也与铜夹结构42相连接。因此，通过铜夹结构42将第一功率晶体管的源极和第二功率晶体管的漏极连接在一起，并通过铜夹结构42引出至相应的引脚32。
位于第二晶片2的下表面的源极电极可以通过导电层24引出。一种实现方式为，导电层24可以直接与图案化的基底31相连接，进而引出至相应的引脚32。可以理解，导电层可以设置为包括焊接层和金属层，或者仅包括可粘接导电层等不同形式的导电结构。另一种实现方式为，导电层24可以设置为重布线层结构，以将源极电极引出至相应的引脚32。重布线层结构和基底31之间可以设置粘接层，以将第二晶片2安装固定于基底31上。第一晶片1的下表面可以通过设置绝缘的粘接层14安装固定于基底31上。
大面积的成片状的铜夹结构，可以承受较大的电流，并且具有较小的导通电阻，降低损耗。
参考图1D，所示为图1B所示的依据本发明应用于功率变换器的封装结构沿A——A’的第二示例剖面图。
与图1C所示的第一示例不同的是，第二连接结构42被配置为重布线金属结构42。
第二晶片2上表面的漏极电极通过金属凸块层25与重布线金属结构42相连接。
第一晶片1上表面的源极电极通过金属凸块层15也与重布线金属结构42相连接。因此，通过重布线金属结构42将第一功率晶体管的源极和第二功率晶体管的漏极连接在一起，并通过重布线金属结构42引出至相应的引脚32。
类似的，大面积的成片状的重布线金属结构，可以承受较大的电流，并且具有较小的导通电阻，降低损耗。
应当理解，图1C和图1D所示的封装结构仅示出了源极电极和引脚之间实现电连接关系的示意图，焊接层25的上下表面，导电层24的上下表面均可以布设所需要的其他层。
以上依据本发明第一实施例的封装结构，还包括塑封体，用以将引线框架，第一晶片，第二晶片，连接装置进行塑封，并将引线框架的引脚裸露所述塑封体外，以通过引脚实现外部连接。
参考图2A，所示为依据本发明第二实施例的应用于功率变换器的封装结构。
与图1A所示的实施例不同的是，在该实施例中，第一晶片1和第二晶片2堆叠排列，显然进一步的降低了封装面积。
具体的，第二晶片2正装于基底31之上，第一晶片1倒装于第二晶片2之上。并且，根据第一晶片1的电极分布区域，沿着垂直方向，第一晶片1和第二晶片2部分重叠。
第二功率晶体管的第一功率电极21(漏极)区域和第一功率晶体管的第二功率电极12(源极)区域沿着封装结构的垂直方向重叠。
第一功率晶体管的第二功率电极12(源极)区域倒扣于第二功率晶体管的第一功率电极21(漏极)区域上方，使得第一功率晶体管的第二功率电极12(源极)和第二功率晶体管的第一功率电极21(漏极)直接相连接。
一种实现方式为，设置位于第一功率晶体管的第二功率电极12(源极)和第二功率晶体管的第一功率电极21(漏极)之间的第一连接结构41，将两者进行连接后，并连接至引线框架的相应引脚32。
第二晶片2的控制电极23和相应的第一晶片1的控制和驱动电极13之间的连接，可以在封装结构内部，通过金属连接结构将两者进行连接。例如，布设第二晶片2的控制电极23对应的焊垫和相应的第一晶片1的控制和驱动电极13对应的焊垫的位置，使之沿垂直方向重叠。这样，两者之间通过金属凸块进行电连接，实现工艺简易，连接的可靠性也比较高。如果第二晶片2的控制电极23对应的焊垫和相应的第一晶片1的控制和驱动电极13对应的焊垫无法满足上述的垂直位置关系，也可以通过重布线层工艺来实现两者之间的连接。
剩余的第一晶片1的控制和驱动电极13，通过倒装封装工艺布设于图案化的引脚32上。
第一晶片1的第一功率电极11与对应的引脚32的之间的连接，可以通过连接在第一晶片1的第一功率电极11和图案化的引脚32之间的金属凸块进行连接；或者可以通过重布线层工艺来实现。
图2A所示的封装结构，相比于图1A所示的封装结构，一方面，封装面积可以进一步的减小；另一方面，晶片与引脚的之间，以及晶片之间的相互连接，均可以不再用金属打线的连接方式，可靠性更高。
参考图2B，所示为图2A所示的依据本发明应用于功率变换器的封装结构沿B——B’的示例剖面图。
在该示例中，第一功率晶体管的源极和第二功率晶体管的漏极通过第二连接结构42相连接。第二连接结构42被配置为铜夹结构42。第二晶片2上表面的漏极电极通过焊接层25与铜夹结构42相连接。第一晶片1上表面的源极电极通过焊接层15也与铜夹结构42相连接。因此，通过铜夹结构42将第一功率晶体管的源极和第二功率晶体管的漏极连接在一起，并通过铜夹结构42引出至相应的引脚32。
第一晶片1的第一功率电极11和引脚32的之间的连接通过第一连接结构41来实现。第一连接结构41可以设置为金属凸块，一端与引脚32相连接，另一端与第一功率电极11对应的焊垫或者金属层相连接，从而将第一功率电极11通过引脚32向外引出。
位于第二晶片2的下表面的源极电极可以通过导电层24引出。一种实现方式为，导电层24可以直接与图案化的基底31相连接，进而引出至相应的引脚32。可以理解，导电层可以设置为包括焊接层和金属层，或者仅包括可粘接导电层等不同形式的导电结构。另一种实现方式为，导电层24可以设置为重布线层结构，以将源极电极引出至相应的引脚32。重布线层结构和基底31之间可以设置粘接层，以将第二晶片2安装固定于基底31上。第一晶片1的下表面可以通过设置绝缘的粘接层14安装固定于基底31上。
可以推知的，第二连接结构42也可以被配置为重布线金属结构42。
第二晶片2上表面的漏极电极通过金属凸块层25与重布线金属结构42相连接。
第一晶片1上表面的源极电极通过金属凸块层15也与重布线金属结构42相连接。因此，通过重布线金属结构42将第一功率晶体管的源极和第二功率晶体管的漏极连接在一起，并通过重布线金属结构42引出至相应的引脚32。
大面积的成片状的铜夹结构或者重布线金属结构，可以承受较大的电流，并且具有较小的导通电阻，降低损耗。
应当理解，图2B所示的封装结构仅示出了源极电极和引脚之间实现电连接关系的示意图，焊接层15和焊接层25的上下表面，导电层24的上下表面均可以布设所需要的其他层。
以上依据本发明第二实施例的封装结构，还包括塑封体，用以将引线框架，第一晶片，第二晶片，连接装置进行塑封，并将引线框架的引脚裸露所述塑封体外，以通过引脚实现外部连接。
以上所描述的实施例中，第二晶片的栅极和漏极位于同一表面。可以理解，第二晶片的栅也可以位于与漏极不同的表面，而与源极处于相同的表面。此时，可以通过将栅极引出至相应的引脚，以及将对应的控制和驱动电极引出至该引脚，从而封装外部实现两者之间的电性连接。
第二晶片的源极电极和相应的引脚之间的连接，可以将背面的源极电极直接贴装于大面积的图案化的引脚上，作为引脚连接结构，这将有利于芯片的散热。在塑封过程中，也可以将引脚连接结构的背面裸露，以进一步的提高散热能力。
另外，在上述实施例中，第二功率级晶体管的控制和驱动电路集成于第一晶片中。可以理解，第二功率级晶体管的控制和驱动电路可以独立为一单独的晶片。在封装结构内部或者通过封装结构的引脚，将两者对应的电极进行电性连接。
如图1B和2A所示的以上所描述的实施例中，第一晶片的第一功率电极和第二功率电极的区域已经进行了划分，并分别占据位于第一晶片上表面的上方的不同的大片的面积区域，以方便后续不同电极之间的相互连接以及电极和引线框架的引脚之间的连接。
以下将根据具体实施例对实现上述第一晶片1的第一功率电极和第二功率电极的区域设置的具体实现方式进行说明。
参考图3A，所示为依据本发明一实施例的第一晶片的功率电极引出结构示意图。仍以MOSFET晶体管为例，第一功率电极为漏极，第二功率电极为源极。
在该实施例中，第一晶片包括多个晶胞单元；每一晶胞单元以连续的漏-栅-源的形式连续设置并彼此并联。方便说明，图中仅示出漏极和源极的排列。漏极和源极交叉并行排列。
图案化的第一连接结构33配置为将所有的漏极连接在一起。具体的，第一连接结构33包括多个第一指状结构332和第一电气引线331。第一功率电极接合区域31是第一指状结构332和第一晶片的漏极电极相接合的区域，据此使得第一连接结构33具有与漏极相同的电位。
类似的，图案化的第二连接结构34配置为将所有的源极连接在一起。具体的，第二连接结构33包括多个第二指状结构342和第二电气引线341。第二功率电极接合区域32是第二指状结构342和第一晶片的源极电极相接合的区域，据此使得第二连接结构34具有与源极相同的电位。
通过图案化的第一连接结构33和第二连接结构34，将漏极和源极分别排布于不同的区域。
一种实现为，图案化的第一连接结构33和第二连接结构34被配置为重布线金属结构。
参考图3B，所示为图3A所示的第一晶片的功率电极引出结构沿C——C’的剖面图。
第一晶片1的源极焊垫通过金属凸块5连接至第二指状结构342，两者的接合区域即为第二功率电极接合区域32。也可以为金属凸块5之外的连接结构，比如，焊接层或者焊球等其他的连接结构。
通过图3A和图3B所示的功率电极引出结构，源极电位和漏极电位被排列于相对两侧区域。通过第二电气引线341引出的源极电位位于靠近第二晶片的区域。第一晶片的源极和第二晶片的漏极的连接，可以通过上述所述大面积的片状连接结构，例如铜夹，将第二连接结构34的第二电气引线341和第二晶片的漏极相连接。第一晶片的漏极和引脚的连接，也可以通过大面积的片状连接结构，例如铜夹，将第一电气引线331和引脚相连接。
第一晶片的功率电极引出结构，也可以通过分层式的具有不同高度的第一连接结构和第二连接结构来实现。例如，连接至漏极焊垫的第一连接结构具有相对较高的高度。连接至源极焊垫的图案化的第二连接结构的高度相对较低，也可以实现将源极和漏极排列于相对的两侧区域。
参考图4A，所示为依据本发明另一实施例的第一晶片的功率电极引出结构示意图，以及图4B所示的图4A所示的依据本发明实施例的第一晶片的功率电极引出结构沿轴线D——D’的剖面图。
仍以MOSFET晶体管为例，第一功率电极为漏极，第二功率电极为源极。
所述图案化的重布线金属结构包括第一金属层，焊接结构和第二金属层；所述第一金属层的第一表面与相同电位的电极引出相连接，所述焊接结构与所述第一金属层的第二表面相连接，并将所述电极电位重新布设于第一晶片的相应区域；所述第二金属层的第一表面与所述焊接结构相连接，并通过第二表面与外部连接。
具体的，图案化的重布线金属结构包括第一金属层401，焊接结构402和第二金属层403。
按照第一晶片1上的焊锡球的矩阵排列方式，图案化的重布线金属结构(漏极重分布单元)通过第一金属层402(漏极)的第一表面与漏极焊锡球401相连接，并通过第二表面上的焊接结构403(例如焊锡球结构)与位于上部区域的第二金属层404相连接，将漏极电极性引至第一晶片的上半侧区域。类似的，重布线金属结构(源极重分布单元)通过第一金属层406(源极)的第一表面与源极焊锡球405相连接，并通过第二表面上的焊接结构407(例如焊锡球结构)与位于下部区域的第二金属层408相连接，将源极电极性引至第一晶片的下半区域，从而将漏极电极性和源极电极性分割为两个独立并且相互不重叠的区域。
第二金属层的面积和厚度可以设置为较大的数值，在实现电气连接的同时，也减小了电流传导路径的电阻，降低了功率损耗。
除了上述已示例说明的晶圆外的连接结构，例如第一连接结构和第二连接结构来实现漏极电位和源极电位的重新排列，也可以在晶圆层面以将漏极电位和源极电位进行了重布设，例如通过晶圆的金属层来实现。
因此，依据本发明的不同电极电位之间的连接结构，以及电极电位和引脚之间的连接结构是指可以将不同电位连接在一起的连接构件，可以包括一个或者多个不同的部分，各部分之间可以是一体，也可以是分立的；可以是相同或者不相同的材料；可以包括晶圆外的部分以及晶圆内的部分。
应当说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
依照本发明实施例如上文所述，这些实施例并没有详尽叙述所有的细节，也不限制该发明仅为所述的具体实施例。显然，根据以上描述，可作很多的修改和变化。本说明书选取并具体描述这些实施例，是为了更好地解释本发明的原理和实际应用，从而使所属技术领域技术人员能很好地利用本发明以及在本发明基础上的修改使用。本发明仅受权利要求书及其全部范围和等效物的限制。

Claims (27)

1.一种应用于功率转换器的封装结构，包括：
第一晶片，至少包括第一功率晶体管和第一控制和驱动电路；
第二晶片，至少包括第二功率晶体管；
连接装置，用以在所述封装结构内部，通过所述连接装置将所述第一功率晶体管和第二功率晶体管依次串联耦接在所述封装结构的引线框架的高电平引脚和低电平引脚之间；
所述第一功率晶体管和所述第二功率晶体管的公共连接点通过低互连电阻的金属连接结构耦接至所述引线框架的输出引脚。
2.根据权利要求1所述的封装结构，其特征在于，所述第二功率晶体管被配置为具有垂直电流流向的功率器件。
3.根据权利要求1所述的封装结构，其特征在于，所述第一功率晶体管与所述高电平引脚之间的连接，所述第二功率晶体管与所述低电平引脚之间的连接，通过低互连电阻的金属连接结构或者通过堆叠式的直接连接方式来实现。
4.根据权利要求3所述的封装结构，其特征在于，低互连电阻的金属连接结构被配置为片状的金属夹结构或者重布线金属结构。
5.根据权利要求1所述的封装结构，其特征在于，所述第一功率晶体管的控制电极和第一功率电极和第二功率电极位于所述第一晶片的同一表面。
6.根据权利要求5所述的封装结构，其特征在于，所述第二功率晶体管的第一功率电极和所述第二功率电极位于所述第二晶片的不同表面。
7.根据权利要求6所述的封装结构，其特征在于，所述第一晶片和第二晶片并行排列。
8.根据权利要求7所述的封装结构，其特征在于，所述连接装置包括金属夹结构，以通过焊接层与所述第一功率晶体管的第二功率电极和所述第二功率晶体管的第一功率电极电耦接，并连接至引线框架的相应引脚。
9.根据权利要求7所述的封装结构，其特征在于，所述连接装置包括金属重布线结构，所述第一功率晶体管的第二电极和所述第二功率晶体管的第一电极，通过焊接工艺，与所述金属重布线层连接，并经由所述金属重布线结构连接至引线框架的相应引脚。
10.根据权利要求5所述的封装结构，其特征在于，所述第一功率晶体管的第一功率电极和第二功率电极的电位区域位于所述第一晶片的相对两侧区域，所述第一功率晶体管的第二功率电极的电位区域位于靠近第二晶片的一侧。
11.根据权利要求10所述的封装结构，其特征在于，所述连接装置包括低互连电阻的金属连接结构，以在所述封装结构内部将所述第二功率晶体管的第一功率电极和所述第一功率晶体管的第二功率电极进行连接，以容纳大电流和降低互连电阻。
12.根据权利要求11所述的封装结构，其特征在于，所述低互连电阻的金属连接结构包括与所述第一功率晶体管的第二功率电极相连的第一部分和与所述第二功率晶体管的第一功率电极相连的第二部分，所述第一部分和第二部分相接触。
13.根据权利要求12所述的封装结构，其特征在于，所述第一部分被配置为图案化的重布线金属结构，以将所述第一功率晶体管的第二功率电极引出。
14.根据权利要求13所述的封装结构，其特征在于，所述第二部分被配置为金属夹结构。
15.根据权利要求13所述的封装结构，其特征在于，所述图案化的重布线金属结构包括电气引线和指状结构；所述指状结构与电极引出结构相连接，所述电气引线与所述指状结构相连接，以将相应的电位引出。
16.根据权利要求13所述的封装结构，其特征在于，所述图案化的重布线金属结构包括第一金属层，焊接结构和第二金属层；所述第一金属层的第一表面与相同电位的电极引出相连接，所述焊接结构与所述第一金属层的第二表面相连接，并将所述电极电位重新布设于第一晶片的相应区域；所述第二金属层的第一表面与所述焊接结构相连接，并通过第二表面与外部连接。
17.根据权利要求6所述的封装结构，其特征在于，所述第一晶片和第二晶片堆叠排列。
18.根据权利要求17所述的封装结构，其特征在于，所述第二晶片正装，所述第一晶片倒装，部分堆叠于所述第二晶片上方。
19.根据权利要求18所述的封装结构，其特征在于，所述第一功率晶体管的第二功率电极区域和所述第二功率晶体管的第一功率电极区域沿所述封装结构的垂直方向重叠。
20.根据权利要求19所述的封装结构，其特征在于，所述连接装置包括金属连接结构，其第一表面通过可焊接结构与所述第一功率晶体管的第二功率电极电连接，第二表面通过可焊接结构与所述第二功率晶体管的第一功率电极电连接，并通过所述金属连接结构连接至引线框架的相应引脚。
21.根据权利要求19所述的封装结构，其特征在于，所述第一控制和驱动电路中的驱动电极通过金属连接结构连接至所述第二功率晶体管的控制电极，所述控制电极与所述第一功率电极位于同一表面。
22.根据权利要求21所述的封装结构，其特征在于，所述金属连接结构配置为金属凸块或者金属重布线结构。
23.根据权利要求19所述的封装结构，其特征在于，所述第一功率晶片的第一功率电极通过金属凸块或者金属重布线结构连接至引线框架的相应引脚。
24.根据权利要求5所述的封装结构，其特征在于，所述第二功率晶体管的第一功率电极和所述第二功率电极位于所述第二晶片的同一表面。
25.根据权利要求24所述的封装结构，其特征在于，所述第一功率晶体管与所述高电平引脚之间的连接，所述第二功率晶体管与所述低电平引脚之间的连接，以及所述第二功率晶体管的第一功率电极和所述第二功率电极之间的连接通过低互连电阻的金属连接结构或者通过堆叠式的直接连接方式来实现。
26.根据权利要求1所述的封装结构，其特征在于，所述第二功率晶体管的控制电极与第一功率电极位于不同表面，所述第一控制和驱动电路中的驱动电极和所述第一功率电极通过金属连接结构连接至所述引线框架的同一引脚。
27.根据权利要求1所述的封装结构，其特征在于，还包括塑封体，以包覆所述第一晶片，第二晶片，所述连接装置和引线框架，并将所述引脚部分裸露于所述塑封体外。
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