CN111435644B - Gate-all-around transistor and preparation method thereof - Google Patents

Gate-all-around transistor and preparation method thereof Download PDF

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CN111435644B
CN111435644B CN201910027378.3A CN201910027378A CN111435644B CN 111435644 B CN111435644 B CN 111435644B CN 201910027378 A CN201910027378 A CN 201910027378A CN 111435644 B CN111435644 B CN 111435644B
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layer
semiconductor
insulating layer
gate
semiconductor substrate
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CN111435644A (en
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刘强
俞文杰
任青华
陈治西
刘晨鹤
赵兰天
陈玲丽
王曦
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Shanghai Institute of Microsystem and Information Technology of CAS
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    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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    • H01L29/107—Substrate region of field-effect devices
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

The invention provides a gate all around transistor and a preparation method thereof, wherein the method comprises the following steps: 1) providing an SOI substrate, wherein a groove is formed in an insulating layer of the SOI substrate; 2) forming a semiconductor nanowire structure which is suspended and spans the groove; 3) rounding and thinning the semiconductor nanowire structure; 4) forming a fully-enclosed gate dielectric layer on the surface of the semiconductor nanowire, and forming a gate electrode layer on the surface of the gate dielectric layer; 5) performing an ion implantation process to form a source region and a drain region by using the gate electrode layer as a mask; 6) removing the gate dielectric layer outside the gate electrode layer; 7) and forming a source electrode and a drain electrode in the source region and the drain region. According to the invention, the gate electrode layer is used as a mask to carry out self-aligned implantation of the source region and the drain region, so that the process stability and the implantation precision can be effectively improved, and the process cost can be effectively reduced. When the semiconductor nanowire is prepared, isotropic wet etching is not needed, and the generation of concave cavities can be effectively avoided.

Description

Gate-all-around transistor and preparation method thereof
Technical Field
The invention belongs to the field of semiconductor integrated circuit design and manufacture, and particularly relates to a gate-all-around transistor and a preparation method thereof.
Background
With the continuous scaling of microelectronic devices, it is expected that the existing FinFET technology will face a larger technical bottleneck at the 5 nm and 3 nm nodes, and the device performance is no longer greatly improved with the continuous reduction of the device size. There is a need for new device technologies, such as new device materials (e.g., strained silicon, silicon germanium, iii-v semiconductors, etc.), and new device structures (e.g., nanowire ring-gate transistors, etc.).
The nanowire gate-all-around transistor can limit a conducting channel to the center of the nanowire instead of the interface of the nanowire and the gate oxide layer, so that scattering of current carriers is greatly reduced, and the nanowire gate-all-around transistor is expected to be an important future development direction and further continues the development of the Mole's law.
The nanowire gate-all-around transistor has various preparation schemes, and one simple preparation method is to etch a hollow nanowire structure based on an SOI (silicon on insulator) substrate and prepare a corresponding gate-all-around transistor. Fig. 1 to 12 show a representative method for manufacturing a nanowire gate-all-around transistor, in which fig. 2 shows a schematic cross-sectional structure at a-a 'in fig. 1, fig. 3 shows a schematic cross-sectional structure at B-B' in fig. 1, and fig. 4 to 12 have the same correspondence. The method mainly comprises the following steps:
as shown in fig. 1 to fig. 3, step 1) is performed to provide an SOI substrate, where the SOI substrate includes a silicon substrate 101, an oxide layer 102, and a top silicon layer 103, and a silicon nanowire 104 is etched in the top silicon layer 103 and the oxide layer 102 through a photolithography process and an etching process;
as shown in fig. 4 to 6, step 2) is performed, and the oxide layer 102 under the silicon nanowire is removed by wet etching to form a hollow hole 105;
as shown in fig. 7 to 9, step 3) is performed to thin the silicon nanowire;
as shown in fig. 10 to 12, step 4) is performed to sequentially deposit a gate dielectric layer 106 and a gate electrode 107 to form a gate-all-around transistor.
The above solution has the following disadvantages:
firstly, when the nanowire structure is etched in step 1), the top silicon of the adjacent region of the nanowire and a part of the silicon oxide under the top silicon need to be etched away. As shown in fig. 2, during the etching process, it is necessary to keep the oxide layer 102 from being etched through, and the remaining silicon oxide layer can still keep a certain thickness to prevent a large parasitic capacitance or breakdown between the gate electrode and the substrate electrode (as shown by 108 in fig. 11) as shown in fig. 11, which brings a certain requirement to the accuracy of the etching process.
Secondly, in order to prepare the silicon nanowire with the suspended structure, the oxide layer under the nanowire needs to be etched, and a wet etching is usually adopted, but since the wet etching is an isotropic etching, a part of the silicon oxide in the exposed region except under the silicon nanowire is also etched, and an unnecessary concave cavity 109 is formed, as shown in fig. 8.
This concave cavity can have the following adverse effects:
as shown in fig. 13 and 14, wherein fig. 13 is a top view of the cross section at C-C' in fig. 11, and fig. 14 is an enlarged view of the dashed box in fig. 13, the concave cavity is finally filled with the gate dielectric layer 106 and the gate electrode 107. In order to ensure good step coverage, an ALD process is generally used to prepare the gate dielectric layer 106 and the gate electrode 107. Even with ALD processes, however, when filling a semi-enclosed structure with dishing, premature contact interconnection of the film to the film occurs easily during filling of the plated film, and eventually an enclosed cavity within the gate metal is formed in the reentrant structure, rather than being completely filled.
As shown in fig. 8, 13 and 14, the corresponding concave cavity 109 in fig. 8 is also filled with the gate dielectric layer 106 and the gate electrode 107, so that the gate electrode under the nanowire is longer than the gate electrode above the nanowire. This results in: an unnecessary overlapping area is arranged between the bottom layer gate and the source drain, a silicon channel in the area is influenced by asymmetric gate potential, and current carriers in the silicon channel are scattered to a certain extent; the resistance between the gate electrode and the source-drain electrode becomes large; the source-drain parasitic capacitance becomes large, and the high-frequency characteristic of the device becomes poor; when the silicon channel of the overlapping region is heavily doped, hot electrons are easily generated between the bottom gate and the silicon channel of the overlapping region, the gate leakage current is increased, and the gate oxide is broken down.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present invention is to provide a ring-gate transistor and a method for manufacturing the same, which are used to solve the problem of low process stability in the process of manufacturing the ring-gate transistor in the prior art.
In order to achieve the above and other related objects, the present invention provides a method for manufacturing a gate all around transistor, including: 1) providing a patterned SOI substrate, wherein the SOI substrate comprises a semiconductor substrate, an insulating layer and a top semiconductor layer, a groove is formed in the insulating layer below the top semiconductor layer, and the groove does not penetrate through the insulating layer; 2) the top semiconductor layer is etched in a patterned mode to form a semiconductor nanowire structure which is suspended and stretches across the groove, and the nanowire structure comprises semiconductor bosses located on two sides of the groove and a plurality of semiconductor nanowires connected to the semiconductor bosses; 3) rounding and thinning the semiconductor nanowire structure; 4) forming a fully-enclosed gate dielectric layer on the surface of the semiconductor nanowire, forming a gate electrode layer on the surface of the gate dielectric layer, and graphically etching the gate electrode layer to expose preparation areas of a source region and a drain region; 5) taking the gate electrode layer as a mask, and carrying out an ion implantation process on the preparation regions of the source region and the drain region to form the source region and the drain region; 6) removing the gate dielectric layer outside the gate electrode layer; 7) and forming a source electrode and a drain electrode in the source region and the drain region.
Optionally, step 1) comprises: step 1-1), providing a first semiconductor substrate and a second semiconductor substrate, forming a first insulating layer on the surface of the first semiconductor substrate, and forming a second insulating layer on the surface of the second semiconductor substrate; step 1-2), performing stripping ion implantation on the first semiconductor substrate based on the first insulating layer, and defining a stripping interface in the first semiconductor substrate; step 1-3), the first insulating layer is etched in a patterned mode, and a groove penetrating through the first semiconductor substrate is formed; step 1-4), bonding the first insulating layer and the second insulating layer, wherein the second insulating layer closes the groove to form a cavity; and 1-5), carrying out an annealing process to strengthen the bonding strength of the first insulating layer and the second insulating layer, and stripping the first semiconductor substrate from a stripping interface, wherein the part combined with the first insulating layer is used as a top semiconductor layer of the SOI substrate.
Optionally, step 1) comprises: step 1-1), providing a first semiconductor substrate and a second semiconductor substrate, and forming a first insulating layer on the surface of the first semiconductor substrate; step 1-2), carrying out stripping ion implantation on the second semiconductor substrate, and defining a stripping interface in the second semiconductor substrate; step 1-3), the first insulating layer is etched in a patterning mode, so that a groove is formed in the first insulating layer, and the groove does not penetrate through the first insulating layer; step 1-4), bonding the second semiconductor substrate and the first insulating layer, wherein the second semiconductor substrate seals the groove to form a cavity; and 1-5), carrying out an annealing process to strengthen the bonding strength of the first insulating layer and the second semiconductor substrate, and stripping the second semiconductor substrate from a stripping interface, wherein the part combined with the first insulating layer is used as a top semiconductor layer of the SOI substrate.
Optionally, the thickness of the top semiconductor layer is no greater than 50 nanometers and the depth of the recess is no greater than 50 nanometers.
Optionally, the bonding atmosphere in step 1-4) includes hydrogen, a mixture of hydrogen and nitrogen, a mixture of oxygen and nitrogen, oxygen, or vacuum, and during the annealing process in step 1-5), the mixture in the cavity is absorbed by or diffused out of the top semiconductor layer to reduce the pressure in the cavity.
Optionally, the annealing process includes annealing at a first temperature to peel the second semiconductor substrate from the peeling interface, and annealing at a second temperature to strengthen the bonding strength between the first insulating layer and the second semiconductor substrate, wherein the first temperature is in a range of 200 to 900 ℃, and the second temperature is in a range of 900 to 1200 ℃.
Optionally, step 3) is to oxidize the semiconductor nanowire structure to form an oxide layer on the surface thereof, and then to remove the oxide layer, so as to reduce the diameter of the semiconductor nanowire and round the semiconductor nanowire.
Optionally, the oxidizing is to perform rapid annealing in an oxygen atmosphere and control the semiconductor nanowire to perform slight oxidation so as to improve the control accuracy of the size and the shape of the nanowire, and the method for removing the oxide layer includes one of wet etching or atomic layer etching.
Optionally, in step 4), an atomic layer deposition process is used to form a fully-enclosed gate dielectric layer on the surface of the semiconductor nanowire, and an atomic layer deposition process is used to form a gate electrode layer on the surface of the gate dielectric layer.
Optionally, the step 4) of performing patterned etching on the gate electrode layer includes one of wet etching, reactive ion etching, and atomic layer etching.
The present invention also provides a gate all around transistor, comprising: a semiconductor substrate; the insulating layer is provided with a groove, and the groove does not penetrate through the insulating layer; the semiconductor nanowire structure is suspended and stretches across the groove, and comprises semiconductor bosses positioned on two sides of the groove and a plurality of semiconductor nanowires connected to the semiconductor bosses; the gate dielectric layer surrounds the surface of the semiconductor nanowire and exposes two end parts of the semiconductor nanowire; the gate electrode layer surrounds the surface of the gate dielectric layer; a source region and a drain region formed at both ends of the semiconductor nanowire and the semiconductor boss; and source and drain electrodes formed on the source and drain regions.
Optionally, the thickness of the insulating layer is not greater than 150 nm, and the depth of the groove is not greater than 50 nm.
As described above, the gate-all-around transistor and the manufacturing method thereof of the present invention have the following beneficial effects:
1) according to the gate-all-around transistor, the gate electrode layer is used as a mask to carry out self-aligned injection of the source region and the drain region, so that the process stability and the injection precision can be effectively improved, and the process cost can be effectively reduced.
2) According to the invention, the SOI substrate with the graphical structure is firstly manufactured, the hollowed-out semiconductor nanowire can be directly prepared by the SOI substrate through dry etching, and when the semiconductor nanowire is prepared, isotropic wet etching is not required, so that the generation of an inwards concave cavity can be effectively avoided.
3) The gate-all-around transistor has the advantages of smaller sub-threshold slope, smaller off-state current density, larger on-state current density, good high-frequency characteristic and good radiation resistance, and is particularly suitable for integrated circuits, sensors, memories and the like with low power consumption, high frequency and high reliability. Because the channel region is completely surrounded by the gate structure, the transistor has good single event effect resistance and total dose effect resistance at the same time, and is suitable for aerospace electronic chips.
Drawings
Fig. 1 to 14 are schematic structural diagrams showing steps of a method for manufacturing a nanowire wrap-around transistor in the prior art.
Fig. 15 to 21 and fig. 29 to 50 are schematic structural diagrams showing steps of a method for manufacturing a gate-all-around transistor according to embodiment 1 of the present invention.
Fig. 22 to fig. 50 are schematic structural diagrams showing steps of a method for manufacturing a gate-all-around transistor in embodiment 2 of the present invention.
Description of the element reference numerals
201 first silicon substrate
202 first insulating layer
203 groove
204 cavity
301 second silicon substrate
302 second insulating layer
401 top silicon layer
501 silicon nanowires
502 silicon boss
601 gate dielectric layer
602 gate electrode layer
603 source region
604 drain region
605 source electrode
606 drain electrode
607 passivation layer
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 15-50. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example 1
As shown in fig. 15 to 21 and fig. 29 to 50, the present embodiment provides a method for manufacturing a gate-all-around transistor, where the method includes:
as shown in fig. 15, step 1) is performed to provide a first silicon substrate 201 and a second silicon substrate 301, form a first insulating layer 202 on the surface of the first silicon substrate 201, and form a second insulating layer 302 on the surface of the second silicon substrate 301. In other embodiments, the first silicon substrate and the second silicon substrate may be made of other semiconductor materials, for example, the material of the first semiconductor substrate and the second semiconductor substrate may be one of germanium, silicon germanium, gallium nitride, aluminum nitride, gallium arsenide, silicon carbide, zinc oxide, gallium oxide, and indium phosphide, and is not limited to the examples listed here.
For example, a thermal oxidation process is used to form silicon dioxide layers on the surfaces of the first silicon substrate 201 and the second silicon substrate 301 as the first insulating layer 202 and the second insulating layer 302, in this embodiment, the thermal oxidation process is a dry thermal oxidation process, and the temperature range of oxidation is 900 to 1200 ℃, and may be 1000 ℃.
The thicknesses of the first insulating layer 202 and the second insulating layer 302 may be 10 nm to 100 nm, respectively, and the thicknesses of the first insulating layer 202 and the second insulating layer 302 may be determined according to the temperature and time of the thermal oxidation process. For example, in the present embodiment, the thickness of the first insulating layer 202 is not greater than 50 nm, such that the depth of the groove 203 is not greater than 50 nm, and the total thickness of the first insulating layer 202 and the second insulating layer 302 is not greater than 150 nm. The above parameter settings may ensure that a sufficient thickness of the insulating layer is maintained below the recess 203, for example, the thickness of the insulating layer below the recess 203 is above 50 nm.
In addition, the first insulating layer 202 can protect the surface of silicon from being damaged during subsequent H or He ion implantation.
As shown in fig. 16, step 2) is then performed to perform a lift-off ion implantation on the first silicon substrate 201 based on the first insulating layer 202, so as to define a lift-off interface in the first silicon substrate 201.
As an example, the stripping ions may be H ions, and the ion implantation parameters depend on the desired implantation depth. Of course, in other embodiments, He ions may be used as the stripping ions for implantation, and the examples are not limited to the examples listed here. The thickness of the subsequent top silicon layer 401 is defined by the depth of the lift-off interface.
As shown in fig. 17, step 3) is then performed to pattern etch the first insulating layer 202, so as to form a groove 203 penetrating to the first silicon substrate 201.
In this embodiment, the patterned etching is anisotropic dry etching to improve the control accuracy of the groove 203.
As shown in fig. 18 to 20, in step 4), the first insulating layer 202 and the second insulating layer 302 are bonded, and the second insulating layer 302 closes the groove 203 to form a cavity 204.
As shown in fig. 21, then, step 5) is performed, an annealing process is performed to enhance the bonding strength between the first insulating layer 202 and the second insulating layer 302, and the first silicon substrate 201 is peeled from the peeling interface, and the portion bonded to the first insulating layer 202 serves as a top silicon layer 401 of the SOI substrate; wherein, the bonding atmosphere in the step 4) includes hydrogen, a mixture of hydrogen and nitrogen, a mixture of oxygen and nitrogen, oxygen, or vacuum, and during the annealing process in the step 5), the mixture in the cavity 204 is absorbed by the top silicon layer 401 or diffused out of the top silicon layer 401 to reduce the pressure in the cavity 204. In the preparation process of the invention, the atmosphere adopted in bonding is selected to be hydrogen/nitrogen or oxygen/nitrogen mixed gas, so that in the subsequent processes of intelligent stripping and high-temperature reinforced bonding, the gas in the insulating layer cavity 204 can be diffused out of silicon or absorbed by silicon, for example, the hydrogen can be diffused out of a semiconductor layer, the oxygen can be absorbed by the semiconductor layer, and the air pressure in the cavity 204 is reduced, so that the cavity 204 structure has an internal pressure close to the external atmospheric pressure in the high-temperature environment, the pressure on the cavity 204 structure is small, and the structure is not easily damaged by the difference of the internal and external air pressures, thereby obtaining the SOI substrate with the graphical structure of the thin-layer top silicon layer 401. For example, in this embodiment, the thickness of the top silicon layer 401 is not greater than 50 nm, and the thin top silicon layer 401 is prepared, so that the application range of the SOI substrate with the patterned structure of the present invention can be effectively expanded, for example, the present invention can be used for etching to form a hollowed silicon nanowire, thereby reducing the etching difficulty of the silicon nanowire and improving the quality of the silicon nanowire.
Specifically, the annealing process includes annealing at a first temperature to peel the first silicon substrate 201 from the peeling interface, and annealing at a second temperature to strengthen the bonding strength between the first insulating layer 202 and the second insulating layer 302, wherein the first temperature is in a range of 200-900 ℃, and the second temperature is in a range of 900-1200 ℃.
The parameters of the above process for different first and second semiconductor substrates are as follows:
Figure BDA0001942994090000071
the top silicon surface is then CMP polished to obtain a top silicon layer 401 with a smooth surface.
As shown in fig. 29 to fig. 32, where fig. 29 to fig. 31 correspond to the schematic structure of the dashed-line frame region in fig. 21, fig. 30 shows the schematic structure of the cross-section at C-C 'in fig. 29, and fig. 31 shows the schematic structure of the cross-section at D-D' in fig. 29, and then step 6) is performed to pattern etch the top silicon layer to form a silicon nanowire 501 structure suspended in the air and crossing over the groove.
Specifically, the patterned etching is anisotropic dry etching, and the nanowire structure includes silicon bosses 502 located on two sides of the groove and a plurality of silicon nanowires 501 connected to the silicon bosses 502.
As shown in fig. 33-35, step 7) is performed next to round and thin the silicon nanowire structure.
The silicon nanowire structure is oxidized to form an oxide layer on the surface thereof, and then the oxide layer is removed to reduce the diameter of the silicon nanowire and round the silicon nanowire, as an example. Specifically, the oxidation is to perform rapid annealing in an oxygen atmosphere and control the silicon nanowires to perform slight oxidation so as to improve the control precision of the size and the shape of the nanowires, and the method for removing the oxide layer comprises one of wet etching or atomic layer etching. For example, in order to reduce the process cost, when wet etching is selected, because the oxide layer on the surface of the silicon nanowire is thin, the wet etching time is short, and the insulating layer below is hardly damaged. For another example, when the atomic layer etching is adopted, the etching precision can be effectively improved, so that the damage of the lower insulating layer can be avoided.
As shown in fig. 36 to 44, step 8) is performed to form a fully-enclosed gate dielectric layer 601 on the surface of the silicon nanowire, form a gate electrode layer 602 on the surface of the gate dielectric layer 601, and pattern-etch the gate electrode layer 602 to expose the preparation regions of the source region 603 and the drain region 604.
As shown in fig. 42 to 44, step 9) is then performed, and an ion implantation process is performed on the preparation regions of the source region 603 and the drain region 604 using the gate electrode layer 602 as a mask to form the source region 603 and the drain region 604. The source region 603 and the drain region 604 are formed at both ends of the silicon and the semiconductor mesa.
For example, an atomic layer deposition process may be used to form a fully-enclosed gate dielectric layer 601 on the surface of the silicon nanowire, and an atomic layer deposition process may be used to form a gate electrode layer 602 on the surface of the gate dielectric layer 601.
The patterned etching of the gate electrode layer 602 includes one of wet etching, reactive ion etching, and atomic layer etching.
In the nanowire gate-all-around transistor, in setting the impurity species and concentration, the transistor may be set to:
1) silicon at the source region 603 and the drain region 604 and silicon at the channel respectively form PN junctions for blocking carriers, namely the doping types of the source region 603, the channel region and the drain region 604 are source region N +/channel region P-/drain region N + or source region P +/channel region N-/drain region P +;
2) the transistor may also be a junction-less transistor, that is, the silicon of the source region 603 and the drain region 604 and the silicon of the channel region are doped in the same type, without PN junction, and the doping types are: the source region N +/channel region N-drain region/N + or the source region P +/channel region P-/drain region P +. Wherein the doping of the channel region can be completed by selecting a wafer meeting the doping conditions when the substrate is prepared.
As shown in fig. 45 to 47, step 10) is performed next to remove the gate dielectric layer 601 except where it is surrounded by the gate electrode layer 602.
As shown in fig. 48 to fig. 50, step 11) is finally performed to form a passivation layer 607, openings exposing the source region 603 and the drain region 604 are formed in the passivation layer 607, and a source electrode 605 and a drain electrode 606 are formed in the source region 603 and the drain region 604 to form the gate-all-around transistor.
Example 2
As shown in fig. 22 to fig. 50, the present embodiment provides a method for manufacturing a gate all around transistor, where the method includes:
as shown in fig. 22, step 1) is performed to provide a first silicon substrate 201 and a second silicon substrate 301, and a first insulating layer 202 is formed on a surface of the first silicon substrate 201. In other embodiments, the first silicon substrate and the second silicon substrate may be made of other silicon materials, for example, the material of the first semiconductor substrate and the second semiconductor substrate may be one of germanium, silicon germanium, gallium nitride, aluminum nitride, gallium arsenide, silicon carbide, zinc oxide, gallium oxide, and indium phosphide, and is not limited to the examples listed here.
For example, a thermal oxidation process is adopted to form a silicon dioxide layer on the surface of the first silicon substrate 201 as the first insulating layer 202, in this embodiment, the thermal oxidation process is a dry thermal oxidation process, and the temperature range of the oxidation is 900 to 1200 ℃, and may be specifically 1000 ℃.
As shown in fig. 24, step 2) is then performed to perform lift-off ion implantation on the second silicon substrate 301, so as to define a lift-off interface in the second silicon substrate 301.
As an example, the stripping ions may be H ions, and the ion implantation parameters depend on the desired implantation depth. Of course, in other embodiments, He ions may be used as the stripping ions for implantation, and the examples are not limited to the examples listed here. The thickness of the subsequent top silicon layer 401 is defined by the depth of the lift-off interface.
As shown in fig. 23, step 3) is then performed to pattern etch the first insulating layer 202, so as to form a groove 203 in the first insulating layer 202, where the groove 203 does not penetrate through the first insulating layer 202.
In this embodiment, the patterned etching is anisotropic dry etching to improve the control accuracy of the groove 203.
For example, in the present embodiment, the thickness of the first insulating layer 202 is not greater than 150 nm, and the depth of the groove 203 is not greater than 50 nm. The above parameter settings may ensure that a sufficient thickness of the insulating layer is maintained below the recess 203, for example, the thickness of the insulating layer below the recess 203 is above 50 nm.
As shown in fig. 25 to 26, step 4) is then performed to bond the second silicon substrate 301 and the first insulating layer 202, and the second silicon substrate 301 closes the groove 203 to form a cavity 204.
As shown in fig. 27, then, step 5) is performed, an annealing process is performed to enhance the bonding strength between the first insulating layer 202 and the second silicon substrate 301, and the second silicon substrate 301 is peeled from the peeling interface, and the portion bonded to the first insulating layer 202 serves as a top silicon layer 401 of the SOI substrate; wherein, the bonding atmosphere in the step 4) includes hydrogen, a mixture of hydrogen and nitrogen, a mixture of oxygen and nitrogen, oxygen, or vacuum, and during the annealing process in the step 5), the mixture in the cavity 204 is absorbed by the top silicon layer 401 or diffused out of the top silicon layer 401 to reduce the pressure in the cavity 204.
In the preparation process of the invention, the atmosphere adopted in bonding is selected to be hydrogen/nitrogen or oxygen/nitrogen mixed gas, so that in the subsequent processes of intelligent stripping and high-temperature reinforced bonding, the gas in the insulating layer cavity 204 can be diffused out of silicon or absorbed by silicon, for example, the hydrogen can be diffused out of a semiconductor layer, the oxygen can be absorbed by the semiconductor layer, and the air pressure in the cavity 204 is reduced, so that the cavity 204 structure has an internal pressure close to the external atmospheric pressure in the high-temperature environment, the pressure on the cavity 204 structure is small, and the structure is not easily damaged by the difference of the internal and external air pressures, thereby obtaining the SOI substrate with the graphical structure of the thin-layer top silicon layer 401. For example, in this embodiment, the thickness of the top silicon layer 401 is not greater than 50 nm, and the thin top silicon layer 401 is prepared, so that the application range of the SOI substrate with the patterned structure of the present invention can be effectively expanded, for example, the present invention can be used for etching to form a hollowed silicon nanowire, thereby reducing the etching difficulty of the silicon nanowire and improving the quality of the silicon nanowire.
Specifically, the annealing process includes annealing at a first temperature to peel the second silicon substrate 301 from the peeling interface, and annealing at a second temperature to strengthen the bonding strength between the first insulating layer 202 and the second silicon substrate 301, wherein the first temperature is in a range of 200-900 ℃, and the second temperature is in a range of 900-1200 ℃.
The parameters of the above process for different first and second semiconductor substrates are as follows:
Figure BDA0001942994090000101
the top silicon surface is then CMP polished to obtain a top silicon layer 401 with a smooth surface.
It should be noted that the above-mentioned manufacturing method is suitable for wafer-level manufacturing, as shown in fig. 28.
As shown in fig. 29 to fig. 32, wherein fig. 29 to fig. 31 correspond to the schematic structure of the dashed-line frame region in fig. 27, fig. 30 shows the schematic structure of the cross-section at C-C 'in fig. 29, fig. 31 shows the schematic structure of the cross-section at D-D' in fig. 29, and finally step 6) is performed to pattern etch the top silicon layer to form a silicon nanowire 501 structure suspended in the air and crossing over the groove.
Specifically, the patterned etching is anisotropic dry etching, and the nanowire structure includes silicon bosses 502 located on two sides of the groove and a plurality of silicon nanowires 501 connected to the silicon bosses 502.
It should be noted that the above-mentioned manufacturing method is suitable for wafer-level manufacturing, as shown in fig. 32.
As shown in fig. 33-35, step 7) is performed next to round and thin the silicon nanowire structure.
The silicon nanowire structure is oxidized to form an oxide layer on the surface thereof, and then the oxide layer is removed to reduce the diameter of the silicon nanowire and round the silicon nanowire, as an example. Specifically, the oxidation is to perform rapid annealing in an oxygen atmosphere and control the silicon nanowires to perform slight oxidation so as to improve the control accuracy of the size and the shape of the nanowires, and the method for removing the oxide layer includes one of wet etching or atomic layer etching. For example, in order to reduce the process cost, when wet etching is selected, because the oxide layer on the surface of the silicon nanowire is thin, the wet etching time is short, and the insulating layer below is hardly damaged. For another example, when the atomic layer etching is adopted, the etching precision can be effectively improved, so that the damage of the lower insulating layer can be avoided.
As shown in fig. 36 to 44, step 8) is performed to form a fully-enclosed gate dielectric layer 601 on the surface of the silicon nanowire, form a gate electrode layer 602 on the surface of the gate dielectric layer 601, and pattern-etch the gate electrode layer 602 to expose the preparation regions of the source region 603 and the drain region 604.
As shown in fig. 42 to 44, step 9) is then performed, and an ion implantation process is performed on the preparation regions of the source region 603 and the drain region 604 using the gate electrode layer 602 as a mask to form the source region 603 and the drain region 604. The source region 603 and the drain region 604 are formed at both end portions of the silicon nanowire and the semiconductor mesa.
For example, an atomic layer deposition process may be used to form a fully-enclosed gate dielectric layer 601 on the surface of the silicon nanowire, and an atomic layer deposition process may be used to form a gate electrode layer 602 on the surface of the gate dielectric layer 601.
The patterned etching of the gate electrode layer 602 includes one of wet etching, reactive ion etching, and atomic layer etching.
In the nanowire gate-all-around transistor, in setting the impurity species and concentration, the transistor may be set to:
1) silicon at the source region 603 and the drain region 604 and silicon at the channel respectively form PN junctions for blocking carriers, namely the doping types of the source region 603, the channel region and the drain region 604 are source region N +/channel region P-/drain region N + or source region P +/channel region N-/drain region P +;
2) the transistor may also be a junction-less transistor, that is, the silicon of the source region 603 and the drain region 604 and the silicon of the channel region are doped in the same type, without PN junction, and the doping types are: the source region N +/the channel region N-drain region/N + or the source region P +/the channel region P-/the drain region P +. Wherein the doping of the channel region can be completed by selecting a wafer meeting the doping conditions when the substrate is prepared.
As shown in fig. 45 to 47, step 10) is performed next to remove the gate dielectric layer 601 except where it is surrounded by the gate electrode layer 602.
As shown in fig. 48 to fig. 50, step 11) is finally performed to form a passivation layer 607, form openings in the passivation layer 607 to expose the source region 603 and the drain region 604, and form a source electrode 605 and a drain electrode 606 in the source region 603 and the drain region 604, so as to form the gate-all-around transistor.
As described above, the method for manufacturing a gate-all-around transistor of the present invention has the following beneficial effects:
1) according to the gate-all-around transistor, the gate electrode layer 602 is used as a mask to perform self-aligned implantation on the source region 603 and the drain region 604, so that the process stability and the implantation precision can be effectively improved, and the process cost can be effectively reduced.
2) According to the invention, the SOI substrate with the graphical structure is firstly manufactured, the hollowed-out semiconductor nanowire can be directly prepared by the SOI substrate through dry etching, and when the semiconductor nanowire is prepared, isotropic wet etching is not required, so that the generation of an inwards concave cavity can be effectively avoided.
3) The gate-all-around transistor has the advantages of smaller subthreshold slope, smaller off-state current density, larger on-state current density, good high-frequency characteristic and good radiation resistance, and is particularly suitable for integrated circuits, sensors, memories and the like with low power consumption, high frequency and high reliability. Because the channel region is completely surrounded by the gate structure, the transistor has good single event effect resistance and total dose effect resistance at the same time, and is suitable for aerospace electronic chips.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (10)

1. A preparation method of a ring gate transistor is characterized by comprising the following steps:
1) providing a patterned SOI substrate, wherein the SOI substrate comprises a semiconductor substrate, an insulating layer and a top semiconductor layer, a groove is formed in the insulating layer below the top semiconductor layer, and the groove does not penetrate through the insulating layer;
2) the top semiconductor layer is etched in a patterned mode to form a semiconductor nanowire structure which is suspended and stretches across the groove, the nanowire structure comprises semiconductor bosses located on two sides of the groove and semiconductor nanowires connected to the semiconductor bosses, and the width of the groove is smaller than the length of the semiconductor nanowires;
3) rounding and thinning the semiconductor nanowire structure;
4) forming a fully-enclosed gate dielectric layer on the surface of the semiconductor nanowire, forming a gate electrode layer on the surface of the gate dielectric layer, and graphically etching the gate electrode layer to expose preparation areas of a source region and a drain region;
5) taking the gate electrode layer as a mask, and carrying out an ion implantation process on the preparation regions of the source region and the drain region to form the source region and the drain region;
6) removing the part of the gate dielectric layer except the part surrounded by the gate electrode layer; a passivation layer is formed on the side wall of the gate, the projection of the passivation layer on the substrate extends to the peripheral region of the projection of the groove on the substrate, and the groove is filled with the gate dielectric layer and the gate electrode layer together;
7) and forming a source electrode and a drain electrode in the source region and the drain region.
2. The method for manufacturing a gate-all-around transistor according to claim 1, wherein: the step 1) comprises the following steps:
step 1-1), providing a first semiconductor substrate and a second semiconductor substrate, forming a first insulating layer on the surface of the first semiconductor substrate, and forming a second insulating layer on the surface of the second semiconductor substrate;
step 1-2), performing stripping ion implantation on the first semiconductor substrate based on the first insulating layer, and defining a stripping interface in the first semiconductor substrate;
step 1-3), the first insulating layer is etched in a patterned mode, and a groove penetrating through the first semiconductor substrate is formed;
step 1-4), bonding the first insulating layer and the second insulating layer, wherein the second insulating layer closes the groove to form a cavity;
and 1-5) carrying out an annealing process to strengthen the bonding strength of the first insulating layer and the second insulating layer, and peeling the first semiconductor substrate from a peeling interface, wherein the part combined with the first insulating layer is used as a top semiconductor layer of the SOI substrate.
3. The method for manufacturing a gate-all-around transistor according to claim 1, wherein: the step 1) comprises the following steps:
step 1-1), providing a first semiconductor substrate and a second semiconductor substrate, and forming a first insulating layer on the surface of the first semiconductor substrate;
step 1-2), carrying out stripping ion implantation on the second semiconductor substrate, and defining a stripping interface in the second semiconductor substrate;
step 1-3), the first insulating layer is etched in a patterning mode, so that a groove is formed in the first insulating layer, and the groove does not penetrate through the first insulating layer;
step 1-4), bonding the second semiconductor substrate and the first insulating layer, wherein the second semiconductor substrate seals the groove to form a cavity;
and 1-5) carrying out an annealing process to strengthen the bonding strength of the first insulating layer and the second semiconductor substrate and peeling the second semiconductor substrate from a peeling interface, wherein the part combined with the first insulating layer is used as a top semiconductor layer of the SOI substrate.
4. The method for manufacturing a gate-all-around transistor according to claim 2 or 3, wherein: the thickness of the top semiconductor layer is not greater than 50 nanometers, and the depth of the groove is not greater than 50 nanometers.
5. The method for manufacturing a gate-all-around transistor according to claim 2 or 3, wherein: the bonding atmosphere of step 1-4) comprises hydrogen, a mixture of hydrogen and nitrogen, a mixture of oxygen and nitrogen, oxygen or vacuum, and during the annealing process of step 1-5), the mixture in the cavity is absorbed by or diffused out of the top semiconductor layer to reduce the pressure in the cavity.
6. The method for manufacturing a gate-all-around transistor according to claim 3, wherein: the annealing process comprises annealing at a first temperature to peel the second semiconductor substrate from a peeling interface and annealing at a second temperature to strengthen the bonding strength of the first insulating layer and the second semiconductor substrate, wherein the first temperature ranges from 200 ℃ to 900 ℃, and the second temperature ranges from 900 ℃ to 1200 ℃.
7. The method of manufacturing a gate-all-around transistor according to claim 1, wherein: and 3) oxidizing the semiconductor nanowire structure to form an oxide layer on the surface of the semiconductor nanowire structure, and then removing the oxide layer to reduce the diameter of the semiconductor nanowire and round the semiconductor nanowire.
8. The method of manufacturing a gate-all-around transistor according to claim 7, wherein: the oxidation is to perform rapid annealing in an oxygen atmosphere and control the semiconductor nanowire to perform slight oxidation so as to improve the control precision of the size and the shape of the nanowire, and the method for removing the oxide layer comprises one of wet etching or atomic layer etching.
9. The method for manufacturing a gate-all-around transistor according to claim 1, wherein: and 4) forming a fully-surrounded gate dielectric layer on the surface of the semiconductor nanowire by adopting an atomic layer deposition process, and forming a gate electrode layer on the surface of the gate dielectric layer by adopting atomic layer deposition.
10. The method for manufacturing a gate-all-around transistor according to claim 1, wherein: and 4) the step of patterning and etching the gate electrode layer comprises one of wet etching, reactive ion etching and atomic layer etching.
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