CN111416005A - Preparation method of non-B-doped crystalline silicon solar cell - Google Patents
Preparation method of non-B-doped crystalline silicon solar cell Download PDFInfo
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- CN111416005A CN111416005A CN202010331646.3A CN202010331646A CN111416005A CN 111416005 A CN111416005 A CN 111416005A CN 202010331646 A CN202010331646 A CN 202010331646A CN 111416005 A CN111416005 A CN 111416005A
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- 238000000151 deposition Methods 0.000 claims abstract description 28
- 238000002161 passivation Methods 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 230000007547 defect Effects 0.000 claims abstract description 7
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 238000005215 recombination Methods 0.000 claims abstract description 7
- 230000006798 recombination Effects 0.000 claims abstract description 7
- 238000007650 screen-printing Methods 0.000 claims abstract description 7
- 238000005245 sintering Methods 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims description 17
- 238000000137 annealing Methods 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- 229910052736 halogen Inorganic materials 0.000 claims description 8
- 150000002367 halogens Chemical class 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 6
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000011084 recovery Methods 0.000 claims description 4
- 238000005562 fading Methods 0.000 claims 2
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 26
- 238000012360 testing method Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 2
- LBZRRXXISSKCHV-UHFFFAOYSA-N [B].[O] Chemical class [B].[O] LBZRRXXISSKCHV-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The invention provides a preparation method of a non-B-doped crystalline silicon solar cell, belonging to the technical field of photovoltaics. It comprises the following steps: A. manufacturing a battery, namely cleaning a silicon wafer, doping by laser, depositing a passivation layer, grooving by laser, and sintering after screen printing an electrode to form the battery; B. and (4) passivating impurities and crystal boundary defects in the silicon wafer of the battery obtained in the step (A) by adopting anti-attenuation treatment, and reducing recombination. The method reduces the attenuation phenomenon of the battery piece by performing special treatment on the battery piece, has relatively simple process, and is suitable for large-scale production.
Description
Technical Field
The invention belongs to the technical field of photovoltaics, and relates to a preparation method of a non-B-doped crystalline silicon solar cell.
Background
The mechanism and solution of light decay (BO-L ID) caused by boron-oxygen complexes was extensively studied prior to 2000. As early as 1997, professor Jan Schmid by ISFH discovered that the use of Ga as a dopant could solve the light decay behavior of Ga-L ID. in 1999, professor T.Saitoh by Tokyo University of Agriculture and Technology, which extensively studied Ga-doped, boron-doped p-type CZ, MCZ and FZ wafers.
There are various prior art references that use of non-B-doped sheet sources, such as Ga-doped sheet sources, is a solution in addition to BO-L ID attenuation using high temperature light or forward current.
More and more battery factories use non-B-doped sheets, such as Ga-doped sheets, for battery production to cope with the degradation problem caused by B-doped sheet sources. But it is not clear whether the Ga-doped sheet source has a new attenuation.
The applicant finds that the efficiency attenuation phenomenon exists in the battery made of a non-B-doped sheet source such as a Ga-doped silicon sheet source under the condition of high-temperature illumination, and the efficiency attenuation phenomenon is particularly obvious on the back surface of a double-sided battery. The rapid attenuation test is carried out by using 1000W illumination and placing the cell at 145 ℃ for 10 minutes, and the cell is illuminated with light with the front side facing upwards, the front efficiency performance of the Ga-doped sheet source has larger fluctuation compared with that of the B-doped sheet source, and the back efficiency performance has larger fluctuation. The back side is irradiated upwards, the front side of the Ga-doped sheet source shows larger efficiency fluctuation compared with the B-doped sheet source, and the back side shows larger efficiency fluctuation.
Disclosure of Invention
The invention aims to solve the problems and provides a preparation method of a non-B-doped crystalline silicon solar cell.
In order to achieve the purpose, the invention adopts the following technical scheme:
a preparation method of a non-B-doped crystalline silicon solar cell is characterized by comprising the following steps:
A. manufacturing a battery, namely cleaning a silicon wafer, doping by laser, depositing a passivation layer, grooving by laser, and sintering after screen printing an electrode to form the battery;
B. and (4) passivating impurities and crystal boundary defects in the silicon wafer of the battery obtained in the step (A) by adopting anti-attenuation treatment, and reducing recombination.
Further, the anti-attenuation treatment is to place the battery in the step A into a light recovery furnace, the front side or the back side of the battery faces upwards, and heat the front side or the back side of the battery by a halogen lamp for high-temperature annealing.
Furthermore, the heating temperature of the halogen lamp is 100-.
Further, the anti-attenuation treatment is to put the battery in the step A into an electric annealing furnace to carry out high-temperature heating.
Furthermore, the current of the electric annealing furnace is 1-20A, the heating temperature is 50-500 ℃, and the heating time is 1-10000 s.
Further, in the step a, after the silicon wafer is cleaned and the selective emitter is doped with laser, the passivation layer is deposited by polishing the surface of the back surface of the silicon wafer with an acid solution and/or an alkali solution, and then depositing a silicon oxide layer with a thickness of 1-200nm on the front surface and the back surface of the silicon wafer.
Further, depositing the passivation layer may further include depositing one or more aluminum oxide films or silicon nitride films on the silicon oxide layer.
Further, the deposition method is plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition or atomic layer deposition.
Further, the thickness of the deposited passivation layer is 1-200 nm.
Compared with the prior art, the invention has the advantages that:
the invention researches the attenuation problem of non-doped B, discovers the attenuation phenomenon of the cell, and provides a preparation method of the crystalline silicon solar cell with the sheet source, wherein the attenuation phenomenon is reduced by specially processing the cell sheet; the method is relatively simple in process and suitable for large-scale production.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention.
Drawings
FIG. 1 is a box line plot of the Eta-Q L ID attenuation ratio.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Example 1
A preparation method of a non-B-doped crystalline silicon solar cell comprises the following steps:
A. manufacturing a battery, namely cleaning a silicon wafer, doping by laser, depositing a passivation layer, grooving by laser, and sintering after screen printing an electrode to form the battery;
B. and (4) passivating impurities and crystal boundary defects in the silicon wafer of the battery obtained in the step (A) by adopting anti-attenuation treatment, and reducing recombination.
And (4) performing anti-attenuation treatment, namely putting the battery in the step A into a light recovery furnace, enabling the front side or the back side of the battery to face upwards, and heating the front side or the back side of the battery by using a halogen lamp to perform high-temperature annealing. The heating temperature of the halogen lamp is 100-500 ℃, the light intensity is more than 1Sun, and the heating time is 1-10000 s.
In the step A, after the silicon wafer is cleaned and the selective emitter is doped by laser, the passivation layer is deposited by polishing the surface of the back surface of the silicon wafer by using an acid solution and/or an alkali solution, and then a silicon oxide layer with the thickness of 1-200nm is deposited on the front surface and the back surface of the silicon wafer.
Depositing the passivation layer further includes depositing one or more layers of aluminum oxide film or silicon nitride film on the silicon oxide layer. The thickness of the deposited passivation layer is 1-200 nm.
The deposition method is plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition or atomic layer deposition.
Example 2
A preparation method of a non-B-doped crystalline silicon solar cell comprises the following steps:
A. manufacturing a battery, namely cleaning, texturing and diffusing the Ga-doped monocrystalline silicon wafer, polishing the doped back surface of the selective emitter, depositing a passivation layer, grooving by laser, performing screen printing on an electrode, and sintering to obtain the battery;
B. and (4) passivating impurities and crystal boundary defects in the silicon wafer of the battery obtained in the step (A) by adopting anti-attenuation treatment, and reducing recombination.
And (4) performing anti-attenuation treatment, namely putting the battery in the step A into a light recovery furnace, enabling the front side or the back side of the battery to face upwards, and heating the back side of the battery by using a halogen lamp to perform high-temperature annealing.
The halogen lamp has the heating temperature of 300 ℃, the light intensity of more than 1Sun and the heating time of 1000 s.
In the step A, after the silicon wafer is cleaned and the selective emitter is doped by laser, the passivation layer is deposited by polishing the surface of the back surface of the silicon wafer by using an acid solution and/or an alkali solution, and then a 40nm silicon oxide layer is deposited on the front surface and the back surface of the silicon wafer.
Depositing the passivation layer further includes depositing one or more layers of aluminum oxide film or silicon nitride film on the silicon oxide layer. The thickness of the deposited passivation layer is 160 nm. The deposition method is plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition or atomic layer deposition.
Example 3
A preparation method of a non-B-doped crystalline silicon solar cell comprises the following steps:
A. manufacturing a battery, namely cleaning a silicon wafer, doping by laser, depositing a passivation layer, grooving by laser, and sintering after screen printing an electrode to form the battery;
B. and (4) passivating impurities and crystal boundary defects in the silicon wafer of the battery obtained in the step (A) by adopting anti-attenuation treatment, and reducing recombination.
And (4) the anti-attenuation treatment is to put the battery in the step A into an electric annealing furnace and heat the battery at a high temperature.
The current of the electric annealing furnace is 1-20A, the heating temperature is 50-500 ℃, and the heating time is 1-10000 s.
In the step A, after the silicon wafer is cleaned and the selective emitter is doped by laser, the passivation layer is deposited by polishing the surface of the back surface of the silicon wafer by using an acid solution and/or an alkali solution, and then a silicon oxide layer with the thickness of 1-200nm is deposited on the front surface and the back surface of the silicon wafer.
Depositing the passivation layer further includes depositing one or more layers of aluminum oxide film or silicon nitride film on the silicon oxide layer. The thickness of the deposited passivation layer is 1-200 nm.
The deposition method is plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition or atomic layer deposition.
Example 4
A preparation method of a non-B-doped crystalline silicon solar cell comprises the following steps:
A. manufacturing a battery, namely cleaning a silicon wafer, doping by laser, depositing a passivation layer, grooving by laser, and sintering after screen printing an electrode to form the battery;
B. and (4) passivating impurities and crystal boundary defects in the silicon wafer of the battery obtained in the step (A) by adopting anti-attenuation treatment, and reducing recombination.
And (4) the anti-attenuation treatment is to put the battery in the step A into an electric annealing furnace and heat the battery at a high temperature.
The current of the electric annealing furnace is 12A, the heating temperature is 250 ℃, and the heating time is 1800 s.
In the step A, after the silicon wafer is cleaned and the selective emitter is doped by laser, the passivation layer is deposited by polishing the surface of the back surface of the silicon wafer by using an acid solution and/or an alkali solution, and then a 40nm silicon oxide layer is deposited on the front surface and the back surface of the silicon wafer.
Depositing the passivation layer further includes depositing one or more layers of aluminum oxide film or silicon nitride film on the silicon oxide layer. The thickness of the deposited passivation layer is 200 nm.
The deposition method is plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition or atomic layer deposition.
Test example 1
The non-B-doped crystalline silicon solar cell was exposed to 1000W light and placed at 145 ℃ for 10 minutes for a rapid decay test, as shown in fig. 1, the circle marks the efficiency performance of the Ga-doped sheet after treatment in example 2, the rest are the efficiency performance of the Ga-doped sheet without annealing treatment, the abscissa "back" represents the back efficiency under back light, and "back-front" represents the front efficiency under back light.
The results show that the efficiency decay performance of the Ga-doped sheet source after annealing becomes obviously better.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit of the invention.
Claims (9)
1. A preparation method of a non-B-doped crystalline silicon solar cell is characterized by comprising the following steps:
A. manufacturing a battery, namely cleaning a silicon wafer, doping by laser, depositing a passivation layer, grooving by laser, and sintering after screen printing an electrode to form the battery;
B. and (4) passivating impurities and crystal boundary defects in the silicon wafer of the battery obtained in the step (A) by adopting anti-attenuation treatment, and reducing recombination.
2. The method as claimed in claim 1, wherein the anti-fading treatment is carried out by placing the cell of step A into a light recovery furnace with the front or back side of the cell facing upward, and heating the front or back side of the cell with a halogen lamp for high temperature annealing.
3. The method as claimed in claim 2, wherein the halogen lamp is heated at 100-500 deg.C with a light intensity >1Sun for 1-10000 s.
4. The method as claimed in claim 1, wherein the anti-fading treatment is to put the cell of step A into an electric annealing furnace and heat the cell at high temperature.
5. The method for preparing a non-doped B crystalline silicon solar cell according to claim 4, wherein the current of the electric annealing furnace is 1-20A, the heating temperature is 50-500 ℃, and the heating time is 1-10000 s.
6. The method as claimed in claim 2, wherein the step of depositing the passivation layer after the silicon wafer is cleaned and the selective emitter is laser doped is a step of polishing the back surface of the silicon wafer with an acid solution and/or an alkali solution, and then depositing a silicon oxide layer of 1-200nm on the front and back surfaces of the silicon wafer.
7. The method as claimed in claim 6, wherein depositing the passivation layer further comprises depositing one or more aluminum oxide films or silicon nitride films on the silicon oxide layer.
8. The method for preparing a non-doped B crystal silicon solar cell as claimed in claim 7, wherein the deposition method is plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition or atomic layer deposition.
9. The method for preparing a non-doped B crystalline silicon solar cell as claimed in claim 7, wherein the thickness of the deposited passivation layer is 1-200 nm.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538500A (en) * | 2015-01-06 | 2015-04-22 | 横店集团东磁股份有限公司 | PECVD coating and sintering process for protecting crystalline silicon solar cell against LID and PID |
| CN108110085A (en) * | 2017-12-15 | 2018-06-01 | 浙江晶科能源有限公司 | A kind of method for inhibiting crystal silicon cell photo attenuation |
| CN109994553A (en) * | 2019-04-30 | 2019-07-09 | 通威太阳能（成都）有限公司 | Three layers of dielectric passivation film PERC solar cell of one kind and manufacture craft |
| CN110459615A (en) * | 2019-08-19 | 2019-11-15 | 通威太阳能（成都）有限公司 | A kind of composite dielectric passivation layer structure solar cell and its preparation process |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538500A (en) * | 2015-01-06 | 2015-04-22 | 横店集团东磁股份有限公司 | PECVD coating and sintering process for protecting crystalline silicon solar cell against LID and PID |
| CN108110085A (en) * | 2017-12-15 | 2018-06-01 | 浙江晶科能源有限公司 | A kind of method for inhibiting crystal silicon cell photo attenuation |
| CN109994553A (en) * | 2019-04-30 | 2019-07-09 | 通威太阳能（成都）有限公司 | Three layers of dielectric passivation film PERC solar cell of one kind and manufacture craft |
| CN110459615A (en) * | 2019-08-19 | 2019-11-15 | 通威太阳能（成都）有限公司 | A kind of composite dielectric passivation layer structure solar cell and its preparation process |
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