CN108110085A - A kind of method for inhibiting crystal silicon cell photo attenuation - Google Patents
A kind of method for inhibiting crystal silicon cell photo attenuation Download PDFInfo
- Publication number
- CN108110085A CN108110085A CN201711352636.2A CN201711352636A CN108110085A CN 108110085 A CN108110085 A CN 108110085A CN 201711352636 A CN201711352636 A CN 201711352636A CN 108110085 A CN108110085 A CN 108110085A
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- photo attenuation
- crystal silicon
- cell photo
- minutes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 85
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 85
- 239000010703 silicon Substances 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000013078 crystal Substances 0.000 title claims abstract description 35
- 230000002401 inhibitory effect Effects 0.000 title claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 14
- 239000011261 inert gas Substances 0.000 claims abstract description 11
- 235000008216 herbs Nutrition 0.000 claims abstract description 6
- 210000002268 wool Anatomy 0.000 claims abstract description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract 2
- 238000000137 annealing Methods 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims description 5
- 239000008103 glucose Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000005416 organic matter Substances 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims 1
- 230000005764 inhibitory process Effects 0.000 abstract description 17
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 abstract description 7
- 150000001721 carbon Chemical group 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000001629 suppression Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 206010054949 Metaplasia Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- GZCGUPFRVQAUEE-SLPGGIOYSA-N aldehydo-D-glucose Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C=O GZCGUPFRVQAUEE-SLPGGIOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000039 congener Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 150000002303 glucose derivatives Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
This application discloses it is a kind of inhibit crystal silicon cell photo attenuation method, including：The organic solution with preset concentration is uniformly distributed on silicon chip after making herbs into wool；Dry the silicon chip；In inert gas atmosphere, anneal to the silicon chip, the carbon atom in the organic solution is decomposited to come and diffuse into the silicon chip.The method of above-mentioned inhibition crystal silicon cell photo attenuation, can inhibit the generation of boron oxygen pair, reduce the photo attenuation amplitude of solar battery sheet.
Description
Technical field
The invention belongs to photovoltaic apparatus technical field, more particularly to a kind of side for inhibiting crystal silicon cell photo attenuation
Method.
Background technology
At present, boron-doping P-type crystal silicon solar cell is the product for occupying photovoltaic market more than 70%.However, this kind of sun
Energy battery is present with the phenomenon that efficiency declines when in use, which is referred to as photo attenuation (Light-induced
degradation：LID), it is 2% to 3% that polycrystalline cell decay ratio is opposite, and monocrystalline attenuation ratio is up to 3% to 5%.Light
Induced attenuation is as the B-O in silicon to caused by (boron oxygen to), the B-O is to easily capturing few son so that minority carrier life time declines, and causes
Battery conversion efficiency declines, i.e. photo attenuation phenomenon.
In order to improve photo attenuation problem, the concentration of boron or oxygen can be reduced at silicon chip end, be combined into so as to reduce B and O
The probability of complex, to reach the amplitude for reducing photo attenuation, such as casting silicon chip during silicon reduced using zone-melting process
Oxygen content in piece uses instead and mixes Ga replacements and mix B to reduce Boron contents, but production cost can be significantly increased, and is unfavorable for scale
Metaplasia is produced, and in addition the congeners of doped silicon can also inhibit its photo attenuation, such as carbon dope element in crystalline silicon, and carbon
Segregation coefficient is much smaller than 1, carbon atom is caused to be unevenly distributed during ingot casting, so as to affect the optical attenuation of each region silicon chip
Amplitude differs, and practicability substantially reduces.
The content of the invention
To solve the above problems, the present invention provides a kind of methods for inhibiting crystal silicon cell photo attenuation, can inhibit
The generation of boron oxygen pair reduces the photo attenuation amplitude of solar battery sheet.
A kind of method for inhibiting crystal silicon cell photo attenuation provided by the invention, including：
The organic solution with preset concentration is uniformly distributed on silicon chip after making herbs into wool；
Dry the silicon chip；
In inert gas atmosphere, anneal to the silicon chip, the carbon atom in the organic solution is decomposited
Come and diffuse into the silicon chip.
Preferably, in the method for above-mentioned inhibition crystal silicon cell photo attenuation, the organic solution is molten for glucose
Liquid.
Preferably, in the method for above-mentioned inhibition crystal silicon cell photo attenuation, the scope of the preset concentration is
0.5mol/L to 1.0mol/L.
Preferably, in the method for above-mentioned inhibition crystal silicon cell photo attenuation, the drying silicon chip is：
At a temperature of 100 DEG C to 150 DEG C, the silicon chip is dried, continues 5 minutes to 10 minutes.
Preferably, in the method for above-mentioned inhibition crystal silicon cell photo attenuation, the inert gas is nitrogen.
Preferably, it is described that annealing bag is carried out to the silicon chip in the method for above-mentioned inhibition crystal silicon cell photo attenuation
It includes：
At a temperature of 300 DEG C to 400 DEG C, first time annealing is carried out to the silicon chip, continues 5 minutes to 10 minutes；
At a temperature of 400 DEG C to 500 DEG C, second is carried out to the silicon chip and is annealed, continues 20 minutes to 30 minutes.
By foregoing description, the method for above-mentioned inhibition crystal silicon cell photo attenuation provided by the invention, due to bag
It includes and the organic solution with preset concentration is uniformly distributed on the silicon chip after making herbs into wool；Dry the silicon chip；In inert gas gas
It in atmosphere, anneals to the silicon chip, the carbon atom in the organic solution is decomposited to come and diffuse into the silicon chip,
Therefore the generation of boron oxygen pair can be inhibited, reduce the photo attenuation amplitude of solar battery sheet.
Description of the drawings
It in order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention, for those of ordinary skill in the art, without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is the schematic diagram of the method for the first inhibition crystal silicon cell photo attenuation provided by the embodiments of the present application.
Specific embodiment
The core concept of the present invention is to provide a kind of method for inhibiting crystal silicon cell photo attenuation, can inhibit boron oxygen
To generation, reduce the photo attenuation amplitude of solar battery sheet.
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment belongs to the scope of protection of the invention.
The method of the first inhibition crystal silicon cell photo attenuation provided by the embodiments of the present application is as shown in Figure 1, Fig. 1 is this
Apply for the schematic diagram of the method for the first inhibition crystal silicon cell photo attenuation that embodiment provides, this method includes following step
Suddenly：
S1：The organic solution with preset concentration is uniformly distributed on silicon chip after making herbs into wool；
Carbon atom can must be at high temperature decomposited used herein of organic matter, can be, but not limited to using dropwise addition
Mode be uniformly coated on the matte of silicon chip, ensure that follow-up carbon atom is evenly distributed in silicon chip.
S2：Dry the silicon chip；
Here using the effect of baking step in the moisture in organic solution is evaporated, leave behind organic matter and stablize point
It is distributed in the surface of silicon chip.
S3：It in inert gas atmosphere, anneals to the silicon chip, the carbon atom in the organic solution is decomposed
Out and diffuse into the silicon chip.
It should be noted that this inert gas atmosphere can prevent it is anti-with the oxygen in air in organic matter decomposable process
It answers and generates carbon monoxide, because carbon monoxide explosive in high temperature, needed before annealing by the air clean in stove.
By foregoing description, the side of the first inhibition crystal silicon cell photo attenuation provided by the embodiments of the present application
Method is uniformly distributed the organic solution with preset concentration due to being included on the silicon chip after making herbs into wool；Dry the silicon chip；Lazy
In property gas atmosphere, anneal to the silicon chip, the carbon atom in the organic solution is decomposited and comes and diffuse into institute
It states in silicon chip, therefore the generation of boron oxygen pair can be inhibited, reduce the photo attenuation amplitude of solar battery sheet.
The method of second of inhibition crystal silicon cell photo attenuation provided by the embodiments of the present application is in the first above-mentioned suppression
On the basis of the method for crystal silicon cell photo attenuation processed, following technical characteristic is further included：
The organic solution is glucose solution.
This glucose solution cost is relatively low, and phosphorus content is high, and easily decomposes, therefore here as preferred embodiment, certainly
Other kinds of organic solution can also be used, is not intended to limit herein.
The method of the third inhibition crystal silicon cell photo attenuation provided by the embodiments of the present application is in the first above-mentioned suppression
On the basis of the method for crystal silicon cell photo attenuation processed, following technical characteristic is further included：
The scope of the preset concentration is 0.5mol/L to 1.0mol/L.
This concentration range will not both cause meaningless waste, it may have and higher decomposition efficiency, resultant effect is relatively good,
Certainly this is also only a kind of preferred embodiment, it is also an option that other schemes, are not intended to limit herein.
The method of 4th kind of inhibition crystal silicon cell photo attenuation provided by the embodiments of the present application is in the first above-mentioned suppression
On the basis of the method for crystal silicon cell photo attenuation processed, following technical characteristic is further included：
The drying silicon chip is：
At a temperature of 100 DEG C to 150 DEG C, the silicon chip is dried, continues 5 minutes to 10 minutes.
This temperature range is higher than the boiling point of water, therefore is easier water is made to become vapor to come out, and can tie
Air-extractor is closed, vapor is taken away, leaves behind glucose on silicon chip.
The method of 5th kind of inhibition crystal silicon cell photo attenuation provided by the embodiments of the present application is in the first above-mentioned suppression
On the basis of the method for crystal silicon cell photo attenuation processed, following technical characteristic is further included：
The inert gas is nitrogen.
It should be noted that nitrogen is a kind of relatively conventional inert gas, it is easily obtained and cost is relatively low, may be used also certainly
To select other inert gases such as argon gas, it is not intended to limit herein.
It is provided by the embodiments of the present application 6th kind inhibition crystal silicon cell photo attenuation method, be it is above-mentioned the first extremely
5th kind inhibition crystal silicon cell photo attenuation method in it is any on the basis of, further include following technical characteristic：
It is described to the silicon chip carry out annealing include：
At a temperature of 300 DEG C to 400 DEG C, first time annealing is carried out to the silicon chip, continues 5 minutes to 10 minutes；
At a temperature of 400 DEG C to 500 DEG C, second is carried out to the silicon chip and is annealed, continues 20 minutes to 30 minutes.
In twice annealing flow mentioned here, for the first time annealing purpose be by breakdown of glucose be carbon atom, second
The purpose of secondary annealing is to diffuse into carbon atom in silicon chip, after the program adds one of carbon dope technique, can inhibit battery
The boron oxygen pair of piece it is compound, so as to reduce cell piece optical attenuation amplitude.
It should also be noted that, the above method is all effective to p-type battery and N-type cell in theory, but due to N
Type battery light decay amplitude is smaller, and the effect that this method embodies is weaker.
The foregoing description of the disclosed embodiments enables professional and technical personnel in the field to realize or use the present invention.
A variety of modifications of these embodiments will be apparent for those skilled in the art, it is as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and the principles and novel features disclosed herein phase one
The most wide scope caused.
Claims (6)
- A kind of 1. method for inhibiting crystal silicon cell photo attenuation, which is characterized in that including：The organic solution with preset concentration is uniformly distributed on silicon chip after making herbs into wool；Dry the silicon chip；In inert gas atmosphere, anneal to the silicon chip, the carbon atom in the organic solution is decomposited to come simultaneously It diffuses into the silicon chip.
- 2. the method according to claim 1 for inhibiting crystal silicon cell photo attenuation, which is characterized in that the organic matter is molten Liquid is glucose solution.
- 3. the method according to claim 1 for inhibiting crystal silicon cell photo attenuation, which is characterized in that the preset concentration Scope be 0.5mol/L to 1.0mol/L.
- 4. the method according to claim 1 for inhibiting crystal silicon cell photo attenuation, which is characterized in that described in the drying Silicon chip is：At a temperature of 100 DEG C to 150 DEG C, the silicon chip is dried, continues 5 minutes to 10 minutes.
- 5. the method according to claim 1 for inhibiting crystal silicon cell photo attenuation, which is characterized in that the inert gas For nitrogen.
- 6. inhibit the method for crystal silicon cell photo attenuation according to claim 1-5 any one of them, which is characterized in that described Annealing is carried out to the silicon chip to be included：At a temperature of 300 DEG C to 400 DEG C, first time annealing is carried out to the silicon chip, continues 5 minutes to 10 minutes；At a temperature of 400 DEG C to 500 DEG C, second is carried out to the silicon chip and is annealed, continues 20 minutes to 30 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711352636.2A CN108110085A (en) | 2017-12-15 | 2017-12-15 | A kind of method for inhibiting crystal silicon cell photo attenuation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711352636.2A CN108110085A (en) | 2017-12-15 | 2017-12-15 | A kind of method for inhibiting crystal silicon cell photo attenuation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108110085A true CN108110085A (en) | 2018-06-01 |
Family
ID=62217404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711352636.2A Pending CN108110085A (en) | 2017-12-15 | 2017-12-15 | A kind of method for inhibiting crystal silicon cell photo attenuation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108110085A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111416005A (en) * | 2020-04-24 | 2020-07-14 | 天合光能股份有限公司 | Preparation method of non-B-doped crystalline silicon solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102171141A (en) * | 2008-09-30 | 2011-08-31 | 赢创德固赛有限公司 | Production of solar-grade silicon from silicon dioxide |
| CN106449891A (en) * | 2016-11-30 | 2017-02-22 | 桂林融通科技有限公司 | Preparation method for inhibiting light attenuation of solar cells |
| CN106711285A (en) * | 2016-12-28 | 2017-05-24 | 东方环晟光伏（江苏）有限公司 | Method for eliminating light induced degradation of boron-doped crystalline silicon cell and device thereof |
-
2017
- 2017-12-15 CN CN201711352636.2A patent/CN108110085A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102171141A (en) * | 2008-09-30 | 2011-08-31 | 赢创德固赛有限公司 | Production of solar-grade silicon from silicon dioxide |
| CN106449891A (en) * | 2016-11-30 | 2017-02-22 | 桂林融通科技有限公司 | Preparation method for inhibiting light attenuation of solar cells |
| CN106711285A (en) * | 2016-12-28 | 2017-05-24 | 东方环晟光伏（江苏）有限公司 | Method for eliminating light induced degradation of boron-doped crystalline silicon cell and device thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111416005A (en) * | 2020-04-24 | 2020-07-14 | 天合光能股份有限公司 | Preparation method of non-B-doped crystalline silicon solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2014523125A (en) | Method for processing a heterojunction solar cell | |
| KR102120147B1 (en) | Solar cell and method of manufacturing the same | |
| TW201911588A (en) | Solar cell and manufacturing method thereof | |
| CN105789382A (en) | Method for improving light degradation of boron-doped crystalline silicon solar cell | |
| Lee et al. | Optimization of fabrication process of high-efficiency and low-cost crystalline silicon solar cell for industrial applications | |
| EA015668B1 (en) | Multicrystalline p-type silicon wafers, having a high lifetime of minor carriage carrier and a method for production thereof | |
| Hallam et al. | Overcoming the challenges of hydrogenation in silicon solar cells | |
| Pollock et al. | Detailed investigation of surface passivation methods for lifetime measurements on p-type silicon wafers | |
| CN108110085A (en) | A kind of method for inhibiting crystal silicon cell photo attenuation | |
| EP3190628B1 (en) | Solar cell and manufacturing method of solar cell | |
| Ning et al. | Research progress of light and elevated temperature-induced degradation in silicon solar cells: A review | |
| Matsumoto et al. | P-type polycrystalline Si Films prepared by aluminum-induced crystallization and doping method | |
| Cai et al. | Effect of post-PECVD photo-assisted anneal on multicrystalline silicon solar cells | |
| Hahn et al. | Hydrogenation in crystalline silicon materials for photovoltaic application | |
| Chu et al. | High‐efficiency thin‐film polycrystalline‐silicon solar cells | |
| EP1176644B1 (en) | Method to activate CdTe thin film solar cells | |
| CN107611005A (en) | The preparation method and its product of a kind of polysilicon membrane and the solar cell comprising the polysilicon membrane | |
| CN103474501A (en) | Selective emitter gallium antimonide infrared battery and manufacturing method thereof | |
| CN107833932A (en) | Cadmium sulfide/silicon nano hole column solar cell and preparation method thereof | |
| CN107170895B (en) | Bulk heterojunction perovskite photoelectric detector and preparation method thereof | |
| Jeong et al. | Lifetime enhancement in EFG multicrystalline silicon [solar cells] | |
| Romeo et al. | High efficiency CdTe/CdS thin film solar cells prepared by treating CdTe Films with a Freon gas in substitution of CdCl2 | |
| Choi et al. | Chemical HF treatment for rear surface passivation of crystalline silicon solar cells | |
| Kaulachs et al. | Perovskite CHNHPbICl Solar Cells and their Degradation (Part 1: A Short Review) | |
| Wolfson et al. | Ion-implanted thin-film solar cells on sheet silicon |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180601 |