CN106449891A - Preparation method for inhibiting light attenuation of solar cells - Google Patents
Preparation method for inhibiting light attenuation of solar cells Download PDFInfo
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- CN106449891A CN106449891A CN201611084580.2A CN201611084580A CN106449891A CN 106449891 A CN106449891 A CN 106449891A CN 201611084580 A CN201611084580 A CN 201611084580A CN 106449891 A CN106449891 A CN 106449891A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 230000002401 inhibitory effect Effects 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000000137 annealing Methods 0.000 claims abstract description 20
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 9
- 239000011574 phosphorus Substances 0.000 claims abstract description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052796 boron Inorganic materials 0.000 claims abstract description 8
- 238000009792 diffusion process Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 7
- 230000008018 melting Effects 0.000 claims abstract description 7
- 238000002844 melting Methods 0.000 claims abstract description 7
- 230000003287 optical effect Effects 0.000 claims description 19
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 16
- 235000008216 herbs Nutrition 0.000 claims description 12
- 210000002268 wool Anatomy 0.000 claims description 12
- 230000001629 suppression Effects 0.000 claims description 11
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 9
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 238000010792 warming Methods 0.000 claims description 8
- 239000006117 anti-reflective coating Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 239000012467 final product Substances 0.000 claims description 6
- 230000014759 maintenance of location Effects 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 abstract 6
- 239000002210 silicon-based material Substances 0.000 abstract 3
- 238000004140 cleaning Methods 0.000 abstract 2
- 230000003667 anti-reflective effect Effects 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 10
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 5
- 238000005406 washing Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JISVROCKRBFEIQ-UHFFFAOYSA-N [O].O=[C] Chemical compound [O].O=[C] JISVROCKRBFEIQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 230000009918 complex formation Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
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- Thermal Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a preparation method for inhibiting light attenuation of solar cells. The preparation method includes doping boron into polycrystalline silicon materials, then melting the polycrystalline silicon materials and growing and slicing the polycrystalline silicon materials under dark-light treatment conditions to obtain silicon wafers; cleaning the silicon wafers, then placing the silicon wafers in reducing atmosphere and carrying out annealing treatment on the silicon wafers; taking the silicon wafers out of the reducing atmosphere, then cleaning the silicon wafers and making texture surfaces; carrying out phosphorus diffusion and etching after the texture surfaces are made and depositing antireflective films; preparing electrodes and sintering the electrodes to obtain the solar cells. The preparation method for inhibiting light attenuation of the solar cells has the advantages that the preparation method is easy to implement, light attenuation characteristics of boron-doped crystalline silicon can be effectively inhibited, accordingly, the photoelectric conversion efficiency can be greatly enhanced, and the preparation method has a broad application prospect.
Description
Technical field
The present invention relates to a kind of preparation method of suppression solar cell optical attenuation, belongs to technical field of solar batteries.
Background technology
Solar energy causes International Academic in recent years as the renewable peace and quiet energy of a kind of " inexhaustible, nexhaustible "
The very big attention of the widely studied and countries in the world on boundary.Sun electricity in all of photovoltaic products, based on p-type boron-doping crystalline silicon
Pond is topmost commercial product, and its market share has reached more than 80% at present.In order to reduce the cost of photovoltaic generation,
Reduce production cost and improve the approach that battery conversion efficiency is crystal-silicon solar cell most main flow.
For the solar cell of p-type boron-doping crystalline silicon, the boron oxygen complex that battery is generated during illumination use
Photo attenuation phenomenon can be caused, and then cause the photoelectric transformation efficiency degradation of solar cell.And solve this problem at present
The more valuable metallic element such as doped gallium, germanium is usually used, and easily causes concentration of the doped chemical in silicon crystal not
Uniformly.Therefore, find boron oxygen complex in a kind of suppression crystal-silicon solar cell to produce and improve its photoelectric transformation efficiency
Method becomes the problem of urgent need to resolve instantly.
Content of the invention
For above-mentioned the deficiencies in the prior art, the technical problem to be solved is to propose a kind of suppression sun electricity
The preparation method of pond optical attenuation.
For achieving the above object, the present invention is achieved through the following technical solutions：
A kind of preparation method of suppression solar cell optical attenuation, comprises the following steps：
(1) polycrystalline silicon raw material is mixed mix homogeneously after boron, and is put in single crystal growing furnace 1380～1460 DEG C are warming up to, melting
Growth obtains the pulling of silicon single crystal of boron-doping afterwards, cuts into slices and cleans and obtains silicon chip A；
(2) the silicon chip A for obtaining in step (1) is put in reducing atmosphere and is made annealing treatment；
(3) the silicon chip A for obtaining after annealing in step (2) is carried out the preparation of solar cell, including：Silicon chip A is carried out clearly
Wash and making herbs into wool；Phosphorus diffusion is carried out after making herbs into wool；Perform etching and antireflective coating deposition；Finally prepare electrode and sinter, obtain final product.
Further, in described step (1), single crystal growing furnace is warming up to 1420 DEG C.
Further, in described step (1), growth course is processed using half-light.
Further, in described step (2) annealing temperature be 720 DEG C, temperature retention time be 4 hours.
Further, in described step (2), reducing atmosphere is made up of carbon monoxide, nitrogen and methane.
Further, in described step (2), in reducing atmosphere, the volume ratio of carbon monoxide, nitrogen and methane is 2:1:2.
Compared with prior art, the invention has the beneficial effects as follows：
The present invention is processed using half-light during monocrystalline silicon growing, tentatively inhibits the formation of boron oxygen complex.This
Contain carbon monoxide in the bright reducing atmosphere being passed through in annealing process, effectively can be dropped using the reduction characteristic of carbon monoxide
Oxygen content in low-mix boron crystal silicon, so as to effectively reduce the possibility of boron oxygen complex formation.Additionally, the methane for containing in atmosphere
The phosphorus content that can be effectively increased in boron-doping crystalline silicon, as the oxygen content in boron-doping crystalline silicon is reduced, the increase of carbon atom is simultaneously
The formation of oxygen precipitation will not be promoted, the combined strength bination of few son and the leak channel in interface is reduced, and as phosphorus content increases
The formation of boron oxygen complex can effectively be suppressed.The preparation method of suppression solar cell optical attenuation of the present invention is easily achieved,
The light-decay characteristic of boron-doping crystalline silicon is effectively inhibited, photoelectric transformation efficiency is greatly improved, have broad application prospects.
Specific embodiment
Embodiment 1
A kind of preparation method of suppression solar cell optical attenuation, comprises the following steps：
(1) polycrystalline silicon raw material is mixed mix homogeneously after boron, and is put in single crystal growing furnace 1420 DEG C are warming up to, dark after melting
Under optical processing, growth obtains the pulling of silicon single crystal of boron-doping, cuts into slices and cleans and obtains silicon chip A；
(2) the silicon chip A for obtaining in step (1) is put in reducing atmosphere and is made annealing treatment, wherein, annealing temperature is
720 DEG C, temperature retention time is 4 hours, and reducing atmosphere is 2 by carbon monoxide, nitrogen and methane by volume:1:2 compositions；
(3) the silicon chip A for obtaining after annealing in step (2) is carried out the preparation of solar cell, including：Silicon chip A is carried out clearly
Washing and making herbs into wool, the deposition of phosphorus diffusion, etching and antireflective coating is carried out after making herbs into wool, finally prepares electrode and sinter, obtain final product.
Embodiment 2
A kind of preparation method of suppression solar cell optical attenuation, comprises the following steps：
(1) polycrystalline silicon raw material is mixed mix homogeneously after boron, and is put in single crystal growing furnace 1380 DEG C are warming up to, dark after melting
Under optical processing, growth obtains the pulling of silicon single crystal of boron-doping, cuts into slices and cleans and obtains silicon chip A；
(2) the silicon chip A for obtaining in step (1) is put in reducing atmosphere and is made annealing treatment, wherein, annealing temperature is
600 DEG C, temperature retention time is 8 hours, and reducing atmosphere is 2 by carbon monoxide, nitrogen and methane by volume:1:2 compositions；
(3) the silicon chip A for obtaining after annealing in step (2) is carried out the preparation of solar cell, including：Silicon chip A is carried out clearly
Washing and making herbs into wool, the deposition of phosphorus diffusion, etching and antireflective coating is carried out after making herbs into wool, finally prepares electrode and sinter, obtain final product.
Embodiment 3
A kind of preparation method of suppression solar cell optical attenuation, comprises the following steps：
(1) polycrystalline silicon raw material is mixed mix homogeneously after boron, and is put in single crystal growing furnace 1460 DEG C are warming up to, dark after melting
Under optical processing, growth obtains the pulling of silicon single crystal of boron-doping, cuts into slices and cleans and obtains silicon chip A；
(2) the silicon chip A for obtaining in step (1) is put in reducing atmosphere and is made annealing treatment, wherein, annealing temperature is
800 DEG C, temperature retention time is 1 hour, and reducing atmosphere is 2 by carbon monoxide, nitrogen and methane by volume:1:2 compositions；
(3) the silicon chip A for obtaining after annealing in step (2) is carried out the preparation of solar cell, including：Silicon chip A is carried out clearly
Washing and making herbs into wool, the deposition of phosphorus diffusion, etching and antireflective coating is carried out after making herbs into wool, finally prepares electrode and sinter, obtain final product.
Embodiment 4
A kind of preparation method of suppression solar cell optical attenuation, comprises the following steps：
(1) polycrystalline silicon raw material is mixed mix homogeneously after boron, and is put in single crystal growing furnace 1450 DEG C are warming up to, dark after melting
Under optical processing, growth obtains the pulling of silicon single crystal of boron-doping, cuts into slices and cleans and obtains silicon chip A；
(2) the silicon chip A for obtaining in step (1) is put in reducing atmosphere and is made annealing treatment, wherein, annealing temperature is
640 DEG C, temperature retention time is 6 hours, and reducing atmosphere is 2 by carbon monoxide, nitrogen and methane by volume:1:2 compositions；
(3) the silicon chip A for obtaining after annealing in step (2) is carried out the preparation of solar cell, including：Silicon chip A is carried out clearly
Washing and making herbs into wool, the deposition of phosphorus diffusion, etching and antireflective coating is carried out after making herbs into wool, finally prepares electrode and sinter, obtain final product.
Certainly, it is that the preferred embodiments of the disclosure is described in detail above, not the present invention is limited with this
Practical range, the equivalence changes made by all principles under this invention, construction and structure, the protection of the present invention all should be covered by
In the range of.
Claims (6)
1. a kind of suppression solar cell optical attenuation preparation method, it is characterised in that comprise the following steps：
(1) polycrystalline silicon raw material is mixed mix homogeneously after boron, and is put in single crystal growing furnace 1380～1460 DEG C are warming up to, raw after melting
Length obtains the pulling of silicon single crystal of boron-doping, cuts into slices and cleans and obtains silicon chip A；
(2) the silicon chip A for obtaining in step (1) is put in reducing atmosphere and is made annealing treatment；
(3) the silicon chip A for obtaining after annealing in step (2) is carried out the preparation of solar cell, including：Silicon chip A is carried out and
Making herbs into wool, carries out the deposition of phosphorus diffusion, etching and antireflective coating after making herbs into wool, finally prepares electrode and sinters, obtains final product.
2. the preparation method of solar cell optical attenuation is suppressed according to claim 1, it is characterised in that step (1)
Middle single crystal growing furnace is warming up to 1420 DEG C.
3. the preparation method of solar cell optical attenuation is suppressed according to claim 2, it is characterised in that step (1)
Middle growth course is processed using half-light.
4. the preparation method of solar cell optical attenuation is suppressed according to claim 3, it is characterised in that step (2)
Middle annealing temperature is 600～800 DEG C, and temperature retention time is 1～8 hour.
5. the preparation method of solar cell optical attenuation is suppressed according to claim 4, it is characterised in that step (2)
Middle reducing atmosphere is made up of carbon monoxide, nitrogen and methane.
6. the preparation method of solar cell optical attenuation is suppressed according to claim 5, it is characterised in that step (2)
In middle reducing atmosphere, the volume ratio of carbon monoxide, nitrogen and methane is 2:1:2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611084580.2A CN106449891A (en) | 2016-11-30 | 2016-11-30 | Preparation method for inhibiting light attenuation of solar cells |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611084580.2A CN106449891A (en) | 2016-11-30 | 2016-11-30 | Preparation method for inhibiting light attenuation of solar cells |
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| Publication Number | Publication Date |
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| CN106449891A true CN106449891A (en) | 2017-02-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201611084580.2A Pending CN106449891A (en) | 2016-11-30 | 2016-11-30 | Preparation method for inhibiting light attenuation of solar cells |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108110085A (en) * | 2017-12-15 | 2018-06-01 | 浙江晶科能源有限公司 | A kind of method for inhibiting crystal silicon cell photo attenuation |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102005506A (en) * | 2010-10-18 | 2011-04-06 | 浙江大学 | Germanium-doped crystalline silicon solar cell capable of suppressing light attenuation and preparation thereof |
| CN103579411A (en) * | 2012-07-20 | 2014-02-12 | 中美矽晶制品股份有限公司 | Improved solar silicon wafer manufacturing method and solar silicon wafer |
-
2016
- 2016-11-30 CN CN201611084580.2A patent/CN106449891A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102005506A (en) * | 2010-10-18 | 2011-04-06 | 浙江大学 | Germanium-doped crystalline silicon solar cell capable of suppressing light attenuation and preparation thereof |
| CN103579411A (en) * | 2012-07-20 | 2014-02-12 | 中美矽晶制品股份有限公司 | Improved solar silicon wafer manufacturing method and solar silicon wafer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108110085A (en) * | 2017-12-15 | 2018-06-01 | 浙江晶科能源有限公司 | A kind of method for inhibiting crystal silicon cell photo attenuation |
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