CN111416004A - 太阳能电池和包括该太阳能电池的太阳能电池板 - Google Patents
太阳能电池和包括该太阳能电池的太阳能电池板 Download PDFInfo
- Publication number
- CN111416004A CN111416004A CN202010016712.8A CN202010016712A CN111416004A CN 111416004 A CN111416004 A CN 111416004A CN 202010016712 A CN202010016712 A CN 202010016712A CN 111416004 A CN111416004 A CN 111416004A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- fingers
- connection portion
- wiring member
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 92
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 239000000969 carrier Substances 0.000 description 41
- 239000013256 coordination polymer Substances 0.000 description 26
- 239000002019 doping agent Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 18
- 238000007789 sealing Methods 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 16
- 238000002161 passivation Methods 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 238000009413 insulation Methods 0.000 description 10
- 101000765037 Mus musculus Class E basic helix-loop-helix protein 40 Proteins 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190002348A KR102622744B1 (ko) | 2019-01-08 | 2019-01-08 | 태양 전지 및 이를 포함하는 태양 전지 패널 |
KR10-2019-0002348 | 2019-01-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111416004A true CN111416004A (zh) | 2020-07-14 |
CN111416004B CN111416004B (zh) | 2023-09-12 |
Family
ID=69147537
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010016712.8A Active CN111416004B (zh) | 2019-01-08 | 2020-01-08 | 太阳能电池和包括该太阳能电池的太阳能电池板 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11575054B2 (zh) |
EP (1) | EP3680939B1 (zh) |
JP (1) | JP7104079B2 (zh) |
KR (1) | KR102622744B1 (zh) |
CN (1) | CN111416004B (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103229307A (zh) * | 2010-11-30 | 2013-07-31 | 夏普株式会社 | 背面电极型太阳能电池单元、带有配线板的背面电极型太阳能电池单元、太阳能电池模块、带有配线板的背面电极型太阳能电池单元的制造方法及太阳能电池模块的制造方法 |
CN104124287A (zh) * | 2014-06-20 | 2014-10-29 | 中山大学 | 一种单晶硅太阳电池背表面栅线电极结构及单晶硅太阳电池 |
CN104282774A (zh) * | 2013-07-03 | 2015-01-14 | 新日光能源科技股份有限公司 | 背接触式太阳能电池及其模块 |
CN105374897A (zh) * | 2014-08-15 | 2016-03-02 | 英稳达科技股份有限公司 | 太阳能电池模组及其制造方法 |
US20170069776A1 (en) * | 2015-09-08 | 2017-03-09 | Lg Electronics Inc. | Solar cell module and method for manufacturing the same |
US20180062016A1 (en) * | 2016-08-26 | 2018-03-01 | Lg Electronics Inc. | Solar cell module and method for manufacturing the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5857237B2 (ja) | 1979-03-09 | 1983-12-19 | 日鉱エンジニアリング株式会社 | 浮上分離装置 |
JP4948219B2 (ja) | 2007-03-23 | 2012-06-06 | 三洋電機株式会社 | 太陽電池 |
JP5857237B2 (ja) | 2010-11-29 | 2016-02-10 | パナソニックIpマネジメント株式会社 | 太陽電池セル及び太陽電池モジュール |
JP5675476B2 (ja) | 2011-04-18 | 2015-02-25 | 株式会社カネカ | 結晶シリコン系太陽電池 |
WO2013183148A1 (ja) * | 2012-06-07 | 2013-12-12 | 三洋電機株式会社 | 太陽電池、太陽電池モジュール、太陽電池の製造方法及び太陽電池モジュールの製造方法 |
TWI464893B (zh) | 2012-12-17 | 2014-12-11 | Motech Ind Inc | 太陽能電池及其模組 |
KR101788166B1 (ko) * | 2016-07-22 | 2017-11-15 | 엘지전자 주식회사 | 태양 전지 모듈 |
US10361322B2 (en) * | 2015-10-08 | 2019-07-23 | Lg Electronics Inc. | Solar cell module |
-
2019
- 2019-01-08 KR KR1020190002348A patent/KR102622744B1/ko active IP Right Grant
-
2020
- 2020-01-07 US US16/736,201 patent/US11575054B2/en active Active
- 2020-01-07 JP JP2020000955A patent/JP7104079B2/ja active Active
- 2020-01-08 CN CN202010016712.8A patent/CN111416004B/zh active Active
- 2020-01-08 EP EP20150696.1A patent/EP3680939B1/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103229307A (zh) * | 2010-11-30 | 2013-07-31 | 夏普株式会社 | 背面电极型太阳能电池单元、带有配线板的背面电极型太阳能电池单元、太阳能电池模块、带有配线板的背面电极型太阳能电池单元的制造方法及太阳能电池模块的制造方法 |
CN104282774A (zh) * | 2013-07-03 | 2015-01-14 | 新日光能源科技股份有限公司 | 背接触式太阳能电池及其模块 |
CN104124287A (zh) * | 2014-06-20 | 2014-10-29 | 中山大学 | 一种单晶硅太阳电池背表面栅线电极结构及单晶硅太阳电池 |
CN105374897A (zh) * | 2014-08-15 | 2016-03-02 | 英稳达科技股份有限公司 | 太阳能电池模组及其制造方法 |
US20170069776A1 (en) * | 2015-09-08 | 2017-03-09 | Lg Electronics Inc. | Solar cell module and method for manufacturing the same |
US20180062016A1 (en) * | 2016-08-26 | 2018-03-01 | Lg Electronics Inc. | Solar cell module and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
US20200220034A1 (en) | 2020-07-09 |
JP2020113760A (ja) | 2020-07-27 |
US11575054B2 (en) | 2023-02-07 |
KR102622744B1 (ko) | 2024-01-09 |
KR20200086121A (ko) | 2020-07-16 |
EP3680939B1 (en) | 2021-08-04 |
JP7104079B2 (ja) | 2022-07-20 |
EP3680939A1 (en) | 2020-07-15 |
CN111416004B (zh) | 2023-09-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8835744B2 (en) | Solar cell module | |
US11538950B2 (en) | Solar cell panel | |
US9577132B2 (en) | Solar cell module | |
CN109494266B (zh) | 太阳能电池板 | |
US20140209151A1 (en) | Solar cell module | |
KR102576589B1 (ko) | 태양 전지 및 이를 포함하는 태양 전지 패널 | |
KR102483986B1 (ko) | 태양 전지 패널 | |
KR20190041268A (ko) | 태양 전지 및 이를 포함하는 태양 전지 패널 | |
KR101909142B1 (ko) | 태양 전지 및 이를 포함하는 태양 전지 패널 | |
CN110931587B (zh) | 太阳能电池和包括该太阳能电池的太阳能电池板 | |
US10879412B2 (en) | Solar cell panel | |
CN109560147B (zh) | 太阳能电池板 | |
KR102398002B1 (ko) | 태양 전지 및 이를 포함하는 태양 전지 패널 | |
CN111416004B (zh) | 太阳能电池和包括该太阳能电池的太阳能电池板 | |
KR101847054B1 (ko) | 태양 전지 패널 | |
KR20200051112A (ko) | 태양 전지 패널 및 이의 제조 방법 | |
US11489083B2 (en) | Solar cell panel | |
KR20210057483A (ko) | 태양 전지 패널 | |
KR101846442B1 (ko) | 태양 전지 및 이를 포함하는 태양 전지 패널 | |
KR101816155B1 (ko) | 태양 전지 패널 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20221028 Address after: No. 3, Yingbin Avenue, Shangrao Economic and Technological Development Zone, Jiangxi Province Applicant after: Shangrao Jingke Green Energy Technology Development Co.,Ltd. Address before: Seoul, South Kerean Applicant before: LG ELECTRONICS Inc. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: No. 3, Yingbin Avenue, Shangrao Economic and Technological Development Zone, Jiangxi Province 334100 Patentee after: Shangrao Xinyuan Yuedong Technology Development Co.,Ltd. Address before: No. 3, Yingbin Avenue, Shangrao Economic and Technological Development Zone, Jiangxi Province 334100 Patentee before: Shangrao Jingke Green Energy Technology Development Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240304 Address after: 213031 Tianhe PV Industrial Park No. 2, Xinbei District, Changzhou, Jiangsu Patentee after: TRINA SOLAR Co.,Ltd. Country or region after: China Address before: No. 3, Yingbin Avenue, Shangrao Economic and Technological Development Zone, Jiangxi Province 334100 Patentee before: Shangrao Xinyuan Yuedong Technology Development Co.,Ltd. Country or region before: China |