CN111403584B - Thermoelectric module suitable for non-airtight packaging and manufacturing method thereof - Google Patents
Thermoelectric module suitable for non-airtight packaging and manufacturing method thereof Download PDFInfo
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- CN111403584B CN111403584B CN201911342180.0A CN201911342180A CN111403584B CN 111403584 B CN111403584 B CN 111403584B CN 201911342180 A CN201911342180 A CN 201911342180A CN 111403584 B CN111403584 B CN 111403584B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/82—Connection of interconnections
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
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Abstract
The invention relates to a thermoelectric module suitable for non-airtight packaging and a manufacturing method thereof, wherein the thermoelectric module comprises an upper substrate, a lower substrate, a galvanic couple pair and flow deflectors which are welded with a semiconductor element and fixedly arranged on the inner sides of the upper substrate and the lower substrate, the lower substrate comprises a galvanic couple region and a wiring region, the wiring region is provided with a wiring pad, the upper substrate is arranged on the galvanic couple region, and protective layers are plated on the surfaces of the flow deflectors and the galvanic couple pair exposed in the air in the galvanic couple region of the upper substrate and the lower substrate. The manufacturing method comprises the steps of sintering the guide vane, welding the couple pair, coating paraffin, plating a protective film and removing the paraffin. The invention has the advantages that: the protective film is arranged to block the corrosion of water vapor or condensed water in the air to semiconductor particles and flow deflectors of the thermoelectric module and avoid short circuit, so that the whole thermoelectric module can normally work in a non-airtight environment even a high-temperature high-humidity environment; the flow guide grooves are arranged, so that condensed water in the upper substrate and the lower substrate can flow out conveniently, and the performance of the thermoelectric module is prevented from being influenced by the condensed water.
Description
Technical Field
The invention relates to the field of thermoelectric modules, in particular to a thermoelectric module suitable for non-airtight packaging and a manufacturing method thereof.
Background
The thermoelectric module generally comprises an upper substrate, a lower substrate, a flow deflector and a semiconductor element, and the working principle is that the upper surface and the lower surface of the substrates respectively cool and heat by utilizing the Peltier effect after being electrified, so the requirements of heating and warming can be met by using the thermoelectric module. When the thermoelectric module is used for cooling or heating, the thermoelectric module is often required to be hermetically sealed to avoid short circuit due to the existence of condensed water.
With the development of society, various communication demands are increasing, the requirements of huge use amount and low cost are met, a new product form is created, COB, non-airtight BOX packaged products and non-traditional airtight packaged products are coming out in succession, the corresponding requirements for thermoelectric modules are increased, and the traditional thermoelectric modules needing airtight packaging cannot meet the current requirements.
Disclosure of Invention
The invention mainly solves the problems that the thermoelectric module is short-circuited and needs to be hermetically packaged due to condensed water or high-humidity environment, and provides the thermoelectric module which is suitable for non-airtight environment and is not influenced by the condensed water and the high-humidity environment and is suitable for non-airtight packaging and the manufacturing method thereof.
The invention solves the technical problem by adopting the technical scheme that the thermoelectric module suitable for non-airtight packaging comprises an upper substrate, a lower substrate, a galvanic couple which is positioned between the upper substrate and the lower substrate and consists of semiconductor elements, and flow deflectors which are welded with the semiconductor elements and fixedly arranged on the inner sides of the upper substrate and the lower substrate, wherein the lower substrate comprises a galvanic couple area and a wiring area, the wiring area is provided with a wiring pad, the upper substrate is arranged on the galvanic couple area, and the flow deflectors exposed in the air in the galvanic couple area of the upper substrate and the lower substrate and the surfaces of the galvanic couple are plated with protective layers.
The wiring pad of the wiring area is electrically connected with the flow deflector of the galvanic couple area, the galvanic couples in the galvanic couple area are connected in series, and the protective layer is used for preventing condensed water, water vapor and the like from corroding and short-circuiting the galvanic couples and the flow deflector in the thermoelectric module.
As a preferable scheme of the above scheme, the inner sides of the upper substrate and the lower substrate are both provided with flow guide grooves, the flow guide grooves comprise transverse flow guide grooves and longitudinal flow guide grooves, the longitudinal flow guide grooves are arranged along the length direction of the upper substrate and the lower substrate, and the transverse flow guide grooves are arranged along the width direction of the upper substrate and the lower substrate. The guiding gutter is convenient for the discharge of the comdenstion water that upper and lower base plate inboard formed, avoids the comdenstion water to be detained in the thermoelectric module, prevents that the comdenstion water from becoming the heat-conducting medium between the upper and lower base plate, influences the thermoelectric module performance.
As a preferable scheme of the above scheme, the longitudinal guiding groove is located at the middle position in the width direction of the upper substrate and the lower substrate, and one end of the longitudinal guiding groove close to the wiring region is higher than one end of the longitudinal guiding groove far away from the wiring region. The condensed water is kept away from the wiring region.
As a preferable scheme of the above scheme, the horizontal guiding gutter is arranged between two adjacent couple pairs, the horizontal guiding gutter is arranged at the edge of the upper substrate and the lower substrate, the horizontal guiding gutter is arranged at the edge of the longitudinal guiding gutter, and one end of the same horizontal guiding gutter, which is positioned at the edge of the upper substrate and the lower substrate, is higher than one end of the same horizontal guiding gutter, which is positioned at the edge of the longitudinal guiding gutter.
As a preferable scheme of the above scheme, protective layers are disposed on the surfaces of the transverse diversion trenches and the longitudinal diversion trenches.
As a preferable mode of the above, the protective layer is parylene.
As a preferable scheme of the above scheme, a circle of soldering tin grooves are arranged on the guide vane near the edge area. The soldering tin groove is used for storing redundant soldering tin during the time setting of the welding couple, and the soldering tin is prevented from overflowing the flow deflector.
The corresponding invention also provides a method for manufacturing a thermoelectric module, for manufacturing a thermoelectric module as claimed in being suitable for non-hermetic packaging, comprising the steps of:
s1: placing the flow deflectors on an upper substrate and a lower substrate, and sintering in a high-temperature furnace;
s2: coating soldering tin on the guide vanes, placing a galvanic couple on the guide vanes of the lower substrate, covering the upper substrate, clamping, and sending the upper substrate and the lower substrate into heating equipment for heating to complete the welding of the galvanic couple;
s3: smearing the outer surfaces of an upper substrate and a lower substrate of an uncooled thermoelectric module and a wiring area by using paraffin; forming paraffin films on the outer surfaces of the upper substrate and the lower substrate of the thermoelectric module and the wiring region;
s4: after the thermoelectric module is cooled, putting the thermoelectric module into vapor deposition equipment for vapor deposition, and plating a layer of protective film on the surface of the thermoelectric module;
s5: paraffin was removed from the thermoelectric module.
The invention has the advantages that: the protective film is arranged to prevent the corrosion of water vapor or condensed water in the air to the semiconductor particles and the flow deflector of the thermoelectric module and avoid short circuit, so that the whole thermoelectric module can normally work in a non-airtight environment, even a high-temperature and high-humidity environment; the flow guide grooves are arranged, so that condensed water in the upper substrate and the lower substrate can flow out conveniently, and the performance of the thermoelectric module is prevented from being influenced by the condensed water.
Drawings
Fig. 1 is a schematic diagram of a thermoelectric module suitable for non-hermetic packaging in an embodiment.
FIG. 2 is a schematic top view of the lower substrate in the embodiment.
Fig. 3 is a schematic top view of the guide vane in the embodiment.
Fig. 4 is a schematic flow chart of a method for manufacturing a thermoelectric module according to an embodiment.
1-upper substrate 2-lower substrate 3-galvanic couple 4-flow deflector 5-wiring pad 6-flow deflector 7-soldering tin groove.
Detailed Description
The technical solution of the present invention is further described below by way of examples with reference to the accompanying drawings.
Example (b):
the thermoelectric module suitable for non-airtight packaging comprises an upper substrate 1, a lower substrate 2, a couple pair 3 which is positioned between the upper substrate and the lower substrate and consists of semiconductor elements, and flow deflectors 4 which are welded with the semiconductor elements and fixedly arranged on the inner sides of the upper substrate and the lower substrate, wherein the lower substrate comprises a couple pair area and a wiring area, the wiring area is provided with a wiring pad 5, the couple pair area is provided with the flow deflectors, the wiring pad of the wiring area is electrically connected with the flow deflectors of the couple pair area, the couple pairs in the couple pair area are connected in series, the length of the lower substrate is greater than that of the upper substrate, the upper substrate just covers the couple pair area of the lower substrate, and the flow deflectors exposed in the air in the couple pair area of the upper substrate and the lower substrate and the surfaces of the couple pairs are plated with protective layers. The protective layer is used for preventing condensed water, water vapor and the like from corroding couple pairs and the flow guide sheet in the thermoelectric module and avoiding short circuit between the couple pairs, and the protective layer is plated on the surface of the thermoelectric module in a parylene vapor deposition mode.
As shown in fig. 2, the inner side of the lower substrate is provided with a guiding gutter 6, the guiding gutter comprises a horizontal guiding gutter and a vertical guiding gutter, the vertical guiding gutter is arranged along the length direction of the lower substrate, and the horizontal guiding gutter is arranged along the width direction of the lower substrate. Vertical guiding gutter is located infrabasal plate width direction's intermediate position, and vertical guiding gutter evenly divide into the infrabasal plate upper portion and lower part, and vertical guiding gutter is the slope setting in the infrabasal plate, and vertical guiding gutter right-hand member is higher than the left end, and when vertical guiding gutter internal storage has the comdenstion water, the comdenstion water flows toward vertical guiding gutter left side under the action of gravity, makes the comdenstion water keep away from the wiring pad.
The transverse diversion trench is arranged between two adjacent couple pairs, the longitudinal diversion trench is used as a boundary, the transverse diversion trench on the upper portion of the lower substrate is arranged on the upper edge of the lower substrate and ends at the longitudinal diversion trench, the transverse diversion trench on the upper portion is arranged to incline to the longitudinal diversion trench, and the upper end of the transverse diversion trench on the upper portion is higher than the lower end of the transverse diversion trench on the upper portion. The transverse diversion trench at the lower part of the lower base plate and the transverse diversion trench at the upper part are symmetrically arranged by taking the longitudinal diversion trench as a symmetry line, and the lower end of the transverse diversion trench at the lower part is higher than the upper end of the transverse diversion trench at the lower part. The arrangement of the diversion trench in the inner side of the upper substrate is mirror symmetry with the arrangement of the diversion trench in the lower basic inner side. The surfaces of the diversion trenches on the upper substrate and the lower substrate are both plated with parylene protection layers. The guiding gutter is convenient for the discharge of the comdenstion water that upper and lower base plate inboard formed, avoids the comdenstion water to be detained in the thermoelectric module, prevents that the comdenstion water from becoming the heat-conducting medium between the upper and lower base plate, influences the thermoelectric module performance.
As shown in fig. 3, the flow deflector is provided with a circle of soldering tin groove near the edge area, and the soldering tin groove is used for storing redundant soldering tin during the time synchronization of the welding couple, so that the soldering tin is prevented from overflowing the flow deflector.
The present embodiment further provides a method for manufacturing a thermoelectric module, as shown in fig. 3, including the steps of:
s1: placing the flow deflectors on the upper substrate and the lower substrate, and sintering in a high-temperature furnace;
s2: coating soldering tin on the guide vanes, placing a galvanic couple on the guide vanes of the lower substrate, covering the upper substrate, clamping, and sending the upper substrate and the lower substrate into heating equipment for heating to complete the welding of the galvanic couple;
s3: smearing the outer surfaces of an upper substrate and a lower substrate of an uncooled thermoelectric module and a wiring area by using paraffin; when the paraffin is coated, the paraffin is melted on the outer surfaces of the upper substrate and the lower substrate of the thermoelectric module and the surface of the wiring area which are still at higher temperature, and after the thermoelectric module is cooled, the paraffin is solidified to form a layer of paraffin film on the surface of the thermoelectric module;
s4: after the thermoelectric module is cooled, putting the thermoelectric module into vapor deposition equipment for vapor deposition, and plating a layer of protective film on the surface of the thermoelectric module;
s5: paraffin on the thermoelectric module is removed, so that the outer surfaces of the upper substrate and the lower substrate of the thermoelectric module and the wiring area are exposed in the air, and the thermoelectric module can be normally cooled, heated and wired.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit or ambit of the invention as defined in the appended claims.
Claims (5)
1. The utility model provides a thermoelectric module suitable for non-airtight encapsulation, includes upper substrate (1), infrabasal plate (2), lies in couple (3) that constitute by semiconductor element between upper substrate and the infrabasal plate and welds and set firmly water conservancy diversion piece (4) with upper substrate and infrabasal plate inboard with semiconductor element, characterized by: the lower substrate comprises a galvanic couple region and a wiring region, the wiring region is provided with a wiring pad (5), the upper substrate is arranged on the galvanic couple region, and the surfaces of the flow deflectors and the galvanic couple exposed in the air in the galvanic couple region of the upper substrate and the galvanic couple region of the lower substrate are plated with protective layers;
the inner sides of the upper substrate and the lower substrate are both provided with diversion trenches (6), the diversion trenches comprise transverse diversion trenches and longitudinal diversion trenches, the longitudinal diversion trenches are arranged along the length directions of the upper substrate and the lower substrate, and the transverse diversion trenches are arranged along the width directions of the upper substrate and the lower substrate; the longitudinal diversion trench is positioned in the middle of the upper substrate and the lower substrate in the width direction, and one end of the longitudinal diversion trench close to the wiring area is higher than one end of the longitudinal diversion trench far away from the wiring area;
the transverse diversion trenches are arranged between two adjacent couple pairs, the transverse diversion trenches are arranged at the edges of the upper substrate and the lower substrate, the transverse diversion trenches are stopped at the longitudinal diversion trenches, and one end of the same transverse diversion trench, which is positioned at the edges of the upper substrate and the lower substrate, is higher than one end of the same transverse diversion trench, which is positioned at the edge of the longitudinal diversion trench.
2. A thermoelectric module adapted for non-hermetic packaging as in claim 1, wherein: and protective layers are arranged on the surfaces of the transverse diversion trenches and the surfaces of the longitudinal diversion trenches.
3. A thermoelectric module adapted for non-hermetic packaging according to claim 1 or 2, wherein: the protective layer is parylene.
4. The thermoelectric module of claim 1 adapted for non-hermetic packaging, wherein: the guide vane is provided with a circle of soldering tin grooves (7) near the edge area.
5. A method of manufacturing a thermoelectric module suitable for non-hermetic packaging according to any one of claims 1 to 4, comprising: the method comprises the following steps:
s1: placing the flow deflectors on an upper substrate and a lower substrate, and sintering in a high-temperature furnace;
s2: coating soldering tin on the guide vane, placing a galvanic couple on the guide vane of the lower substrate, covering the upper substrate, clamping, and feeding into a heating device for heating to complete the galvanic couple welding;
s3: smearing the outer surfaces of an upper substrate and a lower substrate of an uncooled thermoelectric module and a wiring region by using paraffin;
s4: after the thermoelectric module is cooled, putting the thermoelectric module into vapor deposition equipment for vapor deposition, and plating a layer of protective film on the surface of the thermoelectric module;
s5: paraffin was removed from the thermoelectric module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201911342180.0A CN111403584B (en) | 2019-12-23 | 2019-12-23 | Thermoelectric module suitable for non-airtight packaging and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911342180.0A CN111403584B (en) | 2019-12-23 | 2019-12-23 | Thermoelectric module suitable for non-airtight packaging and manufacturing method thereof |
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| CN111403584A CN111403584A (en) | 2020-07-10 |
| CN111403584B true CN111403584B (en) | 2023-03-10 |
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| CN112436086A (en) * | 2020-11-17 | 2021-03-02 | 杭州大和热磁电子有限公司 | Semiconductor refrigeration module |
| CN113659065A (en) * | 2021-07-14 | 2021-11-16 | 杭州大和热磁电子有限公司 | Semiconductor module with double stress release and manufacturing method thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6252154B1 (en) * | 1998-11-25 | 2001-06-26 | Matsushita Electric Works, Ltd. | Thermoelectric module |
| JP2007093106A (en) * | 2005-09-28 | 2007-04-12 | Kyocera Corp | Heat exchanging device |
| CN1979907A (en) * | 2005-12-07 | 2007-06-13 | 雅马哈株式会社 | Thermoelectric module |
| JP2009105305A (en) * | 2007-10-25 | 2009-05-14 | Yamaha Corp | Thermoelectric module |
| JP2009164498A (en) * | 2008-01-10 | 2009-07-23 | Yamaha Corp | Thermoelectric module |
| CN101499466A (en) * | 2008-01-29 | 2009-08-05 | 京瓷株式会社 | Thermoelectric module |
| CN202577452U (en) * | 2012-05-30 | 2012-12-05 | 赵科武 | Device for getting water from air |
| CN203830025U (en) * | 2014-02-20 | 2014-09-17 | 广州五所环境仪器有限公司 | Inner bottom plate guide groove structure of environmental simulation experimental equipment |
| WO2017088768A1 (en) * | 2015-11-26 | 2017-06-01 | 四川捷元科技有限公司 | Absorption type refrigerating unit inclined flow guide condenser, refrigerating unit and refrigerating matrix |
| WO2019223285A1 (en) * | 2018-05-25 | 2019-11-28 | 广东美的暖通设备有限公司 | Heat dissipation apparatus and frequency converter |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100397671C (en) * | 2003-10-29 | 2008-06-25 | 京瓷株式会社 | Thermoelectric inverting model |
| US9601677B2 (en) * | 2010-03-15 | 2017-03-21 | Laird Durham, Inc. | Thermoelectric (TE) devices/structures including thermoelectric elements with exposed major surfaces |
| WO2012063011A2 (en) * | 2010-11-08 | 2012-05-18 | Bg Research Ltd | Heating and cooling low volume biological reaction vessels |
| KR20120066142A (en) * | 2010-12-14 | 2012-06-22 | 삼성전기주식회사 | Thermoelectric module and sealing method thereof |
| US20160372650A1 (en) * | 2015-06-17 | 2016-12-22 | Sheetak Inc. | Thermoelectric device for high temperature applications |
-
2019
- 2019-12-23 CN CN201911342180.0A patent/CN111403584B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6252154B1 (en) * | 1998-11-25 | 2001-06-26 | Matsushita Electric Works, Ltd. | Thermoelectric module |
| JP2007093106A (en) * | 2005-09-28 | 2007-04-12 | Kyocera Corp | Heat exchanging device |
| CN1979907A (en) * | 2005-12-07 | 2007-06-13 | 雅马哈株式会社 | Thermoelectric module |
| JP2009105305A (en) * | 2007-10-25 | 2009-05-14 | Yamaha Corp | Thermoelectric module |
| JP2009164498A (en) * | 2008-01-10 | 2009-07-23 | Yamaha Corp | Thermoelectric module |
| CN101499466A (en) * | 2008-01-29 | 2009-08-05 | 京瓷株式会社 | Thermoelectric module |
| CN202577452U (en) * | 2012-05-30 | 2012-12-05 | 赵科武 | Device for getting water from air |
| CN203830025U (en) * | 2014-02-20 | 2014-09-17 | 广州五所环境仪器有限公司 | Inner bottom plate guide groove structure of environmental simulation experimental equipment |
| WO2017088768A1 (en) * | 2015-11-26 | 2017-06-01 | 四川捷元科技有限公司 | Absorption type refrigerating unit inclined flow guide condenser, refrigerating unit and refrigerating matrix |
| WO2019223285A1 (en) * | 2018-05-25 | 2019-11-28 | 广东美的暖通设备有限公司 | Heat dissipation apparatus and frequency converter |
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