CN111403584A - Thermoelectric module suitable for non-airtight packaging and manufacturing method thereof - Google Patents
Thermoelectric module suitable for non-airtight packaging and manufacturing method thereof Download PDFInfo
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- CN111403584A CN111403584A CN201911342180.0A CN201911342180A CN111403584A CN 111403584 A CN111403584 A CN 111403584A CN 201911342180 A CN201911342180 A CN 201911342180A CN 111403584 A CN111403584 A CN 111403584A
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- thermoelectric module
- upper substrate
- lower substrate
- substrate
- galvanic couple
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 104
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000012188 paraffin wax Substances 0.000 claims abstract description 13
- 239000011241 protective layer Substances 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 230000001681 protective effect Effects 0.000 claims abstract description 6
- 238000003466 welding Methods 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims abstract description 4
- 238000005245 sintering Methods 0.000 claims abstract description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 13
- 238000005476 soldering Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000007740 vapor deposition Methods 0.000 claims description 7
- 239000010410 layer Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims 1
- 238000005260 corrosion Methods 0.000 abstract description 2
- 230000007797 corrosion Effects 0.000 abstract description 2
- 239000002245 particle Substances 0.000 abstract description 2
- 230000005679 Peltier effect Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/82—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to a thermoelectric module suitable for non-airtight packaging and a manufacturing method thereof, wherein the thermoelectric module comprises an upper substrate, a lower substrate, a galvanic couple pair and flow deflectors which are welded with a semiconductor element and fixedly arranged on the inner sides of the upper substrate and the lower substrate, the lower substrate comprises a galvanic couple region and a wiring region, the wiring region is provided with a wiring pad, the upper substrate is arranged on the galvanic couple region, and protective layers are plated on the surfaces of the flow deflectors and the galvanic couple pair exposed in the air in the galvanic couple region of the upper substrate and the lower substrate. The manufacturing method comprises the steps of sintering the flow deflector, welding the couple pair, coating paraffin, plating a protective film and removing the paraffin. The invention has the advantages that: the protective film is arranged to block the corrosion of water vapor or condensed water in the air to semiconductor particles and flow deflectors of the thermoelectric module and avoid short circuit, so that the whole thermoelectric module can normally work in a non-airtight environment even a high-temperature high-humidity environment; the flow guide grooves are arranged, so that condensed water in the upper substrate and the lower substrate can flow out conveniently, and the performance of the thermoelectric module is prevented from being influenced by the condensed water.
Description
Technical Field
The present invention relates to the field of thermoelectric modules, and more particularly, to a thermoelectric module suitable for non-hermetic packaging and a method of manufacturing the same.
Background
The thermoelectric module generally comprises an upper substrate, a lower substrate, a flow deflector and a semiconductor element, and the working principle is that the upper surface and the lower surface of the substrates respectively cool and heat by utilizing the Peltier effect after being electrified, so the requirements of heating and warming can be met by using the thermoelectric module. When the thermoelectric module is used for cooling or heating, the thermoelectric module is often required to be hermetically sealed to avoid short circuit due to the existence of condensed water.
With the development of society, various communication demands are increasing, the requirements of huge use amount and low cost are met, a new product form is created, COB, non-airtight BOX packaged products and non-traditional airtight packaged products are coming out in succession, the corresponding requirements for thermoelectric modules are increased, and the traditional thermoelectric modules needing airtight packaging cannot meet the current requirements.
Disclosure of Invention
The invention mainly solves the problems that the thermoelectric module is short-circuited and needs to be hermetically packaged due to condensed water or high-humidity environment, and provides the thermoelectric module which is suitable for non-airtight environment and is not influenced by the condensed water and the high-humidity environment and is suitable for non-airtight packaging and the manufacturing method thereof.
The invention solves the technical problem by adopting the technical scheme that the thermoelectric module suitable for non-airtight packaging comprises an upper substrate, a lower substrate, a galvanic couple which is positioned between the upper substrate and the lower substrate and consists of semiconductor elements, and flow deflectors which are welded with the semiconductor elements and fixedly arranged on the inner sides of the upper substrate and the lower substrate, wherein the lower substrate comprises a galvanic couple area and a wiring area, the wiring area is provided with a wiring pad, the upper substrate is arranged on the galvanic couple area, and the flow deflectors exposed in the air in the galvanic couple area of the upper substrate and the lower substrate and the surfaces of the galvanic couple are plated with protective layers.
The wiring pad of the wiring area is electrically connected with the flow deflector of the galvanic couple area, the galvanic couples in the galvanic couple area are connected in series, and the protective layer is used for preventing condensed water, water vapor and the like from corroding and short-circuiting the galvanic couples and the flow deflector in the thermoelectric module.
As a preferable scheme of the above scheme, the inner sides of the upper substrate and the lower substrate are both provided with flow guide grooves, the flow guide grooves comprise transverse flow guide grooves and longitudinal flow guide grooves, the longitudinal flow guide grooves are arranged along the length direction of the upper substrate and the lower substrate, and the transverse flow guide grooves are arranged along the width direction of the upper substrate and the lower substrate. The guiding gutter is convenient for the discharge of the comdenstion water that upper and lower base plate inboard formed, avoids the comdenstion water to be detained in the thermoelectric module, prevents that the comdenstion water from becoming the heat-conducting medium between the upper and lower base plate, influences the thermoelectric module performance.
As a preferable scheme of the above scheme, the longitudinal guiding groove is located at the middle position in the width direction of the upper substrate and the lower substrate, and one end of the longitudinal guiding groove close to the wiring region is higher than one end of the longitudinal guiding groove far away from the wiring region. The condensed water is far away from the wiring area.
As a preferable scheme of the above scheme, the horizontal guiding gutter is arranged between two adjacent couple pairs, the horizontal guiding gutter is arranged at the edge of the upper substrate and the lower substrate, the horizontal guiding gutter is arranged at the edge of the longitudinal guiding gutter, and one end of the same horizontal guiding gutter, which is positioned at the edge of the upper substrate and the lower substrate, is higher than one end of the same horizontal guiding gutter, which is positioned at the edge of the longitudinal guiding gutter.
As a preferable scheme of the above scheme, the surfaces of the transverse guide grooves and the longitudinal guide grooves are provided with protective layers.
As a preferable mode of the above, the protective layer is parylene.
As a preferable mode of the above scheme, a circle of soldering tin grooves are arranged on the guide vane near the edge area. The soldering tin groove is used for storing redundant soldering tin during the time setting of the welding couple, and the soldering tin is prevented from overflowing the flow deflector.
The corresponding invention also provides a method for manufacturing a thermoelectric module, for manufacturing a thermoelectric module as claimed in being suitable for non-hermetic packaging, comprising the steps of:
s1: placing the flow deflectors on the upper substrate and the lower substrate, and sintering in a high-temperature furnace;
s2: coating soldering tin on the guide vane, placing a galvanic couple on the guide vane of the lower substrate, covering the upper substrate, clamping, and feeding into a heating device for heating to complete the galvanic couple welding;
s3: smearing the outer surfaces of an upper substrate and a lower substrate of an uncooled thermoelectric module and a wiring area by using paraffin; forming paraffin films on the outer surfaces of the upper substrate and the lower substrate of the thermoelectric module and the wiring region;
s4: after the thermoelectric module is cooled, putting the thermoelectric module into vapor deposition equipment for vapor deposition, and plating a layer of protective film on the surface of the thermoelectric module;
s5: paraffin was removed from the thermoelectric module.
The invention has the advantages that: the protective film is arranged to block the corrosion of water vapor or condensed water in the air to semiconductor particles and flow deflectors of the thermoelectric module and avoid short circuit, so that the whole thermoelectric module can normally work in a non-airtight environment even a high-temperature high-humidity environment; the flow guide grooves are arranged, so that condensed water in the upper substrate and the lower substrate can flow out conveniently, and the performance of the thermoelectric module is prevented from being influenced by the condensed water.
Drawings
Fig. 1 is a schematic diagram of a thermoelectric module suitable for non-hermetic packaging in an embodiment.
FIG. 2 is a schematic top view of the lower substrate in the embodiment.
Fig. 3 is a schematic top view of the guide vane in the embodiment.
Fig. 4 is a schematic flow chart illustrating a method for manufacturing a thermoelectric module according to an embodiment.
1-upper substrate 2-lower substrate 3-galvanic couple 4-flow deflector 5-wiring pad 6-flow deflector 7-soldering tin groove.
Detailed Description
The technical solution of the present invention is further described below by way of examples with reference to the accompanying drawings.
Example (b):
the thermoelectric module suitable for non-airtight packaging comprises an upper substrate 1, a lower substrate 2, a couple pair 3 which is positioned between the upper substrate and the lower substrate and consists of semiconductor elements, and flow deflectors 4 which are welded with the semiconductor elements and fixedly arranged on the inner sides of the upper substrate and the lower substrate, wherein the lower substrate comprises a couple pair area and a wiring area, the wiring area is provided with a wiring pad 5, the couple pair area is provided with the flow deflectors, the wiring pad of the wiring area is electrically connected with the flow deflectors of the couple pair area, the couple pairs in the couple pair area are connected in series, the length of the lower substrate is greater than that of the upper substrate, the upper substrate just covers the couple pair area of the lower substrate, and the flow deflectors exposed in the air in the couple pair area of the upper substrate and the lower substrate and the surfaces of the couple pairs are plated. The protective layer is used for preventing condensate water, water vapor and the like from corroding couple pairs and flow deflectors in the thermoelectric module and avoiding short circuit between the couple pairs, and the protective layer is plated on the surface of the thermoelectric module in a parylene vapor deposition mode.
As shown in fig. 2, the inner side of the lower substrate is provided with a guiding gutter 6, the guiding gutter comprises a horizontal guiding gutter and a vertical guiding gutter, the vertical guiding gutter is arranged along the length direction of the lower substrate, and the horizontal guiding gutter is arranged along the width direction of the lower substrate. The vertical diversion trench is located the intermediate position of infrabasal plate width direction, and vertical diversion trench is with infrabasal plate average divide into upper portion and lower part, and vertical diversion trench is the slope setting in the infrabasal plate, and vertical diversion trench right-hand member is higher than the left end, and when vertical diversion trench had the comdenstion water, the comdenstion water flowed toward vertical diversion trench left side under the action of gravity, made the comdenstion water keep away from the wiring pad.
The transverse diversion trench is arranged between two adjacent couple pairs, the longitudinal diversion trench is used as a boundary, the transverse diversion trench on the upper portion of the lower substrate is arranged on the upper edge of the lower substrate and ends at the longitudinal diversion trench, the transverse diversion trench on the upper portion is arranged to incline to the longitudinal diversion trench, and the upper end of the transverse diversion trench on the upper portion is higher than the lower end of the transverse diversion trench on the upper portion. The transverse diversion trench at the lower part of the lower base plate and the transverse diversion trench at the upper part are symmetrically arranged by taking the longitudinal diversion trench as a symmetry line, and the lower end of the transverse diversion trench at the lower part is higher than the upper end of the transverse diversion trench at the lower part. The arrangement of the diversion trench in the inner side of the upper substrate is mirror symmetry with the arrangement of the diversion trench in the lower basic inner side. The surfaces of the diversion trenches on the upper substrate and the lower substrate are both plated with parylene protection layers. The guiding gutter is convenient for the discharge of the comdenstion water that upper and lower base plate inboard formed, avoids the comdenstion water to be detained in the thermoelectric module, prevents that the comdenstion water from becoming the heat-conducting medium between the upper and lower base plate, influences the thermoelectric module performance.
As shown in fig. 3, the baffle is provided with a circle of soldering tin grooves near the edge area, and the soldering tin grooves are used for storing redundant soldering tin during the time setting of the welding couple, so as to prevent the soldering tin from overflowing the baffle.
The present embodiment further provides a method for manufacturing a thermoelectric module, which is used for manufacturing the thermoelectric module, as shown in fig. 3, and includes the following steps:
s1: placing the flow deflectors on the upper substrate and the lower substrate, and sintering in a high-temperature furnace;
s2: coating soldering tin on the guide vane, placing a galvanic couple on the guide vane of the lower substrate, covering the upper substrate, clamping, and feeding into a heating device for heating to complete the galvanic couple welding;
s3: smearing the outer surfaces of an upper substrate and a lower substrate of an uncooled thermoelectric module and a wiring area by using paraffin; when the paraffin is coated, the paraffin is melted on the outer surfaces of the upper substrate and the lower substrate of the thermoelectric module and the surface of the wiring area which are still at higher temperature, and after the thermoelectric module is cooled, the paraffin is solidified to form a paraffin film on the surface of the thermoelectric module;
s4: after the thermoelectric module is cooled, putting the thermoelectric module into vapor deposition equipment for vapor deposition, and plating a layer of protective film on the surface of the thermoelectric module;
s5: paraffin on the thermoelectric module is removed, so that the outer surfaces of the upper substrate and the lower substrate of the thermoelectric module and the wiring area are exposed in the air, and the thermoelectric module can be normally cooled, heated and wired.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit or ambit of the invention as defined in the appended claims.
Claims (8)
1. The utility model provides a thermoelectric module suitable for non-airtight encapsulation, includes upper substrate (1), infrabasal plate (2), lies in couple (3) that constitute by semiconductor element between upper substrate and the infrabasal plate and welds and set firmly water conservancy diversion piece (4) with upper substrate and infrabasal plate inboard with semiconductor element, characterized by: the lower substrate comprises a galvanic couple region and a wiring region, the wiring region is provided with a wiring pad (5), the upper substrate is arranged on the galvanic couple region, and the surfaces of the flow deflectors exposed in the air and the galvanic couples in the galvanic couple region of the upper substrate and the lower substrate are plated with protective layers.
2. A thermoelectric module adapted for non-hermetic packaging as in claim 1, wherein: the upper substrate and the lower substrate are both provided with guide grooves (6) on the inner sides, the guide grooves comprise transverse guide grooves and longitudinal guide grooves, the longitudinal guide grooves extend along the length direction of the upper substrate and the lower substrate, and the transverse guide grooves extend along the width direction of the upper substrate and the lower substrate.
3. A thermoelectric module adapted for non-hermetic packaging as in claim 2, wherein: the longitudinal diversion trench is positioned in the middle of the upper substrate and the lower substrate in the width direction, and one end, close to the wiring area, of the longitudinal diversion trench is higher than one end, far away from the wiring area, of the longitudinal diversion trench.
4. A thermoelectric module adapted for non-hermetic packaging as in claim 2, wherein: the transverse diversion trenches are arranged between two adjacent couple pairs, the transverse diversion trenches are arranged at the edges of the upper substrate and the lower substrate, the transverse diversion trenches are stopped at the longitudinal diversion trenches, and one end of the same transverse diversion trench, which is positioned at the edges of the upper substrate and the lower substrate, is higher than one end of the same transverse diversion trench, which is positioned at the edge of the longitudinal diversion trench.
5. A thermoelectric module adapted for non-hermetic packaging as in claim 2, wherein: and protective layers are arranged on the surfaces of the transverse diversion trenches and the surfaces of the longitudinal diversion trenches.
6. A thermoelectric module adapted for non-hermetic packaging as in claim 1 or 5, wherein: the protective layer is parylene.
7. A thermoelectric module adapted for non-hermetic packaging as in claim 1, wherein: the guide vane is provided with a circle of soldering tin grooves (7) near the edge area.
8. A method of manufacturing a thermoelectric module suitable for non-hermetic packaging according to any one of claims 1 to 7, comprising: the method comprises the following steps:
s1: placing the flow deflectors on the upper substrate and the lower substrate, and sintering in a high-temperature furnace;
s2: coating soldering tin on the guide vane, placing a galvanic couple on the guide vane of the lower substrate, covering the upper substrate, clamping, and feeding into a heating device for heating to complete the galvanic couple welding;
s3: smearing the outer surfaces of an upper substrate and a lower substrate of an uncooled thermoelectric module and a wiring area by using paraffin;
s4: after the thermoelectric module is cooled, putting the thermoelectric module into vapor deposition equipment for vapor deposition, and plating a layer of protective film on the surface of the thermoelectric module;
s5: paraffin was removed from the thermoelectric module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911342180.0A CN111403584B (en) | 2019-12-23 | 2019-12-23 | Thermoelectric module suitable for non-airtight packaging and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911342180.0A CN111403584B (en) | 2019-12-23 | 2019-12-23 | Thermoelectric module suitable for non-airtight packaging and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN111403584A true CN111403584A (en) | 2020-07-10 |
| CN111403584B CN111403584B (en) | 2023-03-10 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112436086A (en) * | 2020-11-17 | 2021-03-02 | 杭州大和热磁电子有限公司 | Semiconductor refrigeration module |
| CN113659065A (en) * | 2021-07-14 | 2021-11-16 | 杭州大和热磁电子有限公司 | Semiconductor module with double stress release and manufacturing method thereof |
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| CN113659065A (en) * | 2021-07-14 | 2021-11-16 | 杭州大和热磁电子有限公司 | Semiconductor module with double stress release and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111403584B (en) | 2023-03-10 |
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