CN111383924B - 具有使用激光烧蚀的部分emi屏蔽去除的半导体器件 - Google Patents

具有使用激光烧蚀的部分emi屏蔽去除的半导体器件 Download PDF

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CN111383924B
CN111383924B CN201911337139.4A CN201911337139A CN111383924B CN 111383924 B CN111383924 B CN 111383924B CN 201911337139 A CN201911337139 A CN 201911337139A CN 111383924 B CN111383924 B CN 111383924B
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over
conductive layer
layer
substrate
laser
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CN111383924A (zh
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金昌伍
K.W.邱
曹成源
B.W.蔡
J.W.李
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Stats Chippac Pte Ltd
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Stats Chippac Pte Ltd
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Abstract

半导体器件具有基板。第一部件和第二部件设置在基板上方。第一部件包括天线。凸缘设置在基板上方的第一部件和第二部件之间。密封剂沉积在基板和凸缘上方。导电层形成在密封剂上方并与凸缘接触。使用激光烧蚀去除第一部件上方的导电层的第一部分。

Description

具有使用激光烧蚀的部分EMI屏蔽去除的半导体器件
技术领域
本发明总体上涉及半导体器件，并且更特别地涉及半导体器件以及形成半导体器件的方法，所述半导体器件具有使用激光烧蚀部分地去除的电磁干扰（EMI）屏蔽层。
背景技术
半导体器件通常存在于现代电子产品中。半导体器件执行各式各样的功能，诸如信号处理、高速计算、发射和接收电磁信号、控制电子设备、将太阳光转化为电力以及为电视显示器创建视觉图像。在通信、功率转换、网络、计算机、娱乐和消费者产品的领域中存在半导体器件。半导体器件也存在于军事应用、航空、汽车、工业控制器和办公装备中。
半导体器件通常包括用于处理射频（RF）信号的一些电路。最近的技术进步允许使用系统级封装（SiP）技术与小尺寸、低高度、高时钟频率和良好便携性集成的高速数字和RF半导体封装。SiP器件包括一起集成在单个半导体封装中的多个半导体部件，例如，半导体管芯、半导体封装、集成无源器件和分立有源或无源电部件。
图1图示了现有技术的SiP器件30。SiP器件30包括设置在PCB或其它基板32上的多个部件。基板32包括一个或多个绝缘层34，其中导电层36形成在绝缘层34上方、之间以及形成为穿过绝缘层34。
半导体管芯40被集成为SiP器件30的部分。半导体管芯40包括具有在有源表面上方形成的接触焊盘44的有源表面42。焊料凸块46用于将半导体管芯40的接触焊盘44电和机械地耦合到基板32的导电层36。半导体管芯40通过导电层36电耦合到半导体封装50。
半导体封装50包括半导体管芯52以提供有源功能性。半导体管芯52在半导体管芯的有源表面上方具有接触焊盘54。半导体管芯52设置于引线框56的管芯焊盘上方并且由接合线57耦合到引线框的触点或引线。半导体管芯52、接合线57和引线框56在集成到SiP器件30中之前被模塑在密封剂58中。一旦完成，就利用用于机械和电耦合的焊料59将半导体封装50安装在基板32上。在一个实施例中，焊料59是在安装半导体封装50之前印刷到基板32上的焊料膏。
在集成之后，在半导体管芯40、半导体封装50和基板32上方沉积第二密封剂60，以在环境上保护SiP器件30。焊料凸块62设置在基板32与半导体管芯40和半导体封装50相对的侧上。凸块62后续地用于将SiP器件30安装到较大的电子器件的基板上。SiP器件30包括一起操作以实现期望的电功能性的多个半导体器件。
半导体器件通常易受电磁干扰（EMI）、射频干扰（RFI）、谐波失真或其它器件间干扰（诸如电容性、电感性或导电性耦合）（也称为串扰）的影响，所述干扰可干扰其操作。数字电路的高速切换也生成干扰。
因为SiP器件30中的高速数字和RF电路，屏蔽免遭电磁干扰（EMI）是重要的。共形EMI屏蔽已经作为减少EMI的影响的优选方法涌现。来自击中SiP器件30的附近器件的EMI可以导致SiP器件的部件内的故障。来自SiP器件30的EMI也可能导致附近器件中的故障。图1图示了共形EMI屏蔽64。EMI屏蔽64是由在沉积密封剂60之后共形地涂覆在SiP器件30的顶表面和侧表面上方的溅射来形成的金属的薄层。EMI屏蔽64减小进入和离开SiP器件30的EMI辐射的大小以减少干扰。在一些实施例中，EMI屏蔽64通过基板32中的导电层36耦合到接地，所述导电层36延伸到基板的边缘。
EMI屏蔽64提供EMI干扰的减少。然而，在整个SiP器件30上方的共形涂覆EMI屏蔽64导致需要充当收发器天线的SiP器件中的器件或模块的问题。EMI屏蔽64降低所有电磁辐射的大小，包括对于通信或其它目的而言期望的辐射。为了使用天线发射和接收，半导体管芯40或半导体封装50必须利用EMI屏蔽64外部的天线耦合到电子器件的分离元件。然而，使收发器部件连同受益于EMI保护的其它部件集成在SiP器件内会允许电子器件的速度、尺寸及功率要求的进一步改进。因此，存在对于半导体封装的部分EMI屏蔽的需要。
附图说明
图1图示了具有共形施加的电磁干扰（EMI）屏蔽层的SiP器件；
图2a-2h图示了形成具有EMI屏蔽的SiP器件的过程；
图3a-3d图示了使用单个激光器从载体上的多个SiP器件部分地去除EMI屏蔽的过程；
图4a和4b图示了形成有部分屏蔽的SiP器件；
图5a和5b图示了使用多激光器设置从多个单元部分地去除EMI屏蔽的过程；
图6a-6d图示了使用单个激光器从单个自由旋转SiP器件部分地去除EMI屏蔽的过程；
图7图示了从围绕仅一个轴旋转的单个单元部分地去除EMI屏蔽的过程；
图8a-8f图示了使用薄层掩模和激光去除的组合来部分地去除EMI屏蔽的过程；
图9a-9c图示了用于去除EMI屏蔽的替代配置；以及
图10a和10b图示了将SiP器件集成到电子设备中。
具体实施方式
参考附图在以下描述中的一个或多个实施例中描述了本发明，其中相同的标号表示相同或相似的元件。虽然根据用于实现本发明的目标的最佳模式描述了本发明，但是本领域技术人员将领会的是，意图覆盖可以包括在由所附权利要求及其等同物限定的本发明的精神和范围内的替代、修改和等同物，所附权利要求及其等同物如通过以下公开和附图所支持的那样。如本文中所使用的术语“半导体管芯”指代词语的单数和复数形式两者，并且因此可指代单个半导体器件及多个半导体器件两者。
图2a是在形成部分EMI屏蔽和分割成单独SiP器件之前由锯道102分离的SiP器件的面板100的横截面图。两个SiP器件被图示，但是几百或几千个SiP器件通常使用下面图示的相同步骤在单个面板中形成。类似于图1中的基板32，在基板110上方形成面板100。基板110包括与一个或多个导电层114交错的一个或多个绝缘层112。在一个实施例中，绝缘层112是芯绝缘板，其中导电层114在顶表面和底表面（例如，覆铜层压基板）上方图案化。导电层114还包括通过绝缘层112电耦合的导电通孔。基板110可以包括在彼此上方交错的任何数量的导电和绝缘层。可以在基板110的任一侧上方形成焊料掩模或钝化层。
在基板110的底表面上方的导电层114的接触焊盘上形成焊料凸块116。凸块116可选地在稍后的处理步骤中形成。在用于将SiP器件集成到电子器件中的其它实施例中使用其它类型的互连结构，诸如柱形凸块、导电引脚、铜柱、连接盘栅格阵列（LGA）焊盘或线接合。
在其它实施例中，任何合适类型的基板或引线框用于基板110。在一个实施例中，面板100形成在稍后去除的牺牲基板110上方。去除牺牲基板暴露了密封器件上的互连结构（例如，半导体管芯124上的凸块46），以用于后续集成到较大系统中。
实现SiP器件的意图的功能性所期望的任何部件被安装到基板110或设置在基板110上方并且电连接到导电层114。图2a作为示例图示了安装在基板110上的半导体封装50和半导体管芯124。半导体管芯124是使用天线128在通过空中电波发送或接收的电磁辐射信号与半导体管芯内的电信号之间进行转换的收发器设备。半导体管芯124的收发器功能性将通过不具有形成在天线128上方的共形EMI屏蔽层来促进，所述共形EMI屏蔽层可能阻挡期望的信号。另一方面，半导体封装50是将受益于EMI屏蔽的示例器件。
在一个实施例中，半导体管芯124是用于自动驾驶车辆中的对象检测的雷达设备，并且半导体封装50包括用于支持雷达功能性的存储器和逻辑电路。在其它实施例中，可以将任何期望的部件并入到SiP器件中。部件可以包括任何类型的半导体封装、半导体管芯、集成无源器件、分立有源或无源部件或其它电部件的任何组合。
每个SiP器件中的部件（例如，半导体管芯124和半导体封装50）由合适的互连结构（例如，焊料凸块46）安装在基板110上并连接至基板110，然后被封装。使用膏印刷、压缩模塑、转移模塑、液体密封剂模塑、真空层压、旋涂或另一合适的施加器来在半导体管芯124、半导体封装50和基板110上方沉积密封剂或模塑化合物130。密封剂130可以是聚合物复合材料，诸如环氧树脂、环氧丙烯酸酯或具有或不具有填料的任何合适的聚合物。密封剂130是不导电的、提供结构支撑、并且在环境上保护SiP器件免受外部元件和污染物影响。
在图2b中，通过半导体管芯124和半导体封装50之间的每个SiP器件形成沟槽140。通过利用光刻掩模、激光烧蚀、锯切、反应离子蚀刻或另一合适的开槽过程的化学蚀刻来形成沟槽140。在一个实施例中，沟槽140连续地延伸进入和离开图2b的页面的面板100的整个长度。在其它实施例中，沟槽140较短，例如，仅直接在半导体管芯124和半导体封装50之间形成并且不延伸到SiP器件的边缘。沟槽140完全穿过密封剂130向下形成到基板110。在一些实施例中，导电层114的一部分暴露在沟槽140内。导电层114可以被图案化以包括延伸达沟槽140的长度的带，以减小导电层和后续地沉积到沟槽中的导电材料之间的电阻。
图2c图示了面板100的部分横截面。利用导电材料填充沟槽140以形成凸缘150。使用任何合适的金属沉积技术形成凸缘150。可通过利用导电油墨或膏填充沟槽140或在沟槽内镀敷导电材料来形成凸缘150。在其它实施例中，预形成凸缘150并将其插入到沟槽140中。凸缘150是在半导体管芯124和封装50之间延伸以减小从天线128朝向封装50（或反之亦然）直接辐射的EMI的大小的金属层。在一些实施例中，凸缘150通过导电层114和凸块116电耦合到接地节点以帮助EMI阻挡能力。在其它实施例中，凸缘150在没有到导电层114或接地节点的连接的情况下减少EMI。
图2d图示了具有一次形成的八个SiP器件的面板100的一部分的立体图。八个SiP器件中的每一个包括将器件分成两个不同区的凸缘150。凸缘150被图示为在相邻的锯道102之间的中间。然而，凸缘可形成用于EMI屏蔽的任何期望尺寸和形状的分隔件。器件的每个列或行共同共享凸缘150，因为沟槽140和凸缘150形成为用于面板100的整个长度或宽度。在其它实施例中，每个器件具有分离的凸缘150，所述凸缘150可以延伸或可以不延伸到锯道102。
在图2e中，使用锯片、水射流或激光切割工具154在锯道102处分割面板100，以穿过密封剂130和基板110切割并且将每个器件分离成单独SiP器件156，如图2f中所示。分割在锯道102所处于的每个单元之间创建间隙。间隙允许在图2g和图2h中的SiP器件156的侧表面上方沉积共形屏蔽层，所述图2g和图2h示出了相同处理步骤的两个不同视图。
共形屏蔽层160形成在SiP器件156上方并且完全覆盖每个SiP器件的顶表面和侧表面。通过喷涂、镀敷、溅射或任何其它合适的金属沉积过程形成屏蔽层160。屏蔽层160可以由铜、铝、铁或用于EMI屏蔽的任何其它合适的材料形成。在一些实施例中，在图2e中的分割期间，面板100设置在具有可选的热释放或界面层的载体上。分割的SiP器件156保留在相同的载体上以用于施加屏蔽层160。因此，在形成屏蔽层160期间，相邻SiP器件156之间的空间等于切割工具154的锯切口的宽度。屏蔽层160的厚度足够低，以至于相邻SiP器件156的屏蔽层不接触并且封装在载体上保持为分割的。在其它实施例中，SiP器件156在分割之后并且在形成屏蔽层160之前设置在分离的载体上。
屏蔽层160完全覆盖SiP器件156的每个暴露表面，包括顶表面和所有四个侧表面。密封剂130的所有暴露表面在形成屏蔽层160中被涂覆在导电材料中。具有基板110和凸块116的SiP器件156的底表面通常不被屏蔽层160覆盖，这是因为溅射方法是自上而下的并且仅覆盖侧向或朝上面向的表面，或者是因为载体上的界面层完全覆盖底表面并且作为掩模操作。
屏蔽层160形成为直接接触凸缘150的顶表面和侧表面以形成连续的EMI屏蔽。每个SiP器件156由凸缘150分成两侧：开放侧156a和屏蔽侧156b。开放侧156a被称为开放侧是因为开放侧将具有至少部分地去除使得部件“开放”以发送和接收无线电信号的屏蔽层160。期望地发射或接收电磁辐射的任何器件（例如，半导体管芯124）被放置在开放侧156a内。被屏蔽保护免受EMI的任何器件（例如，半导体封装50）被放置在屏蔽侧156b内。开放侧156a和屏蔽侧156b上的器件可跨越由凸缘150穿过导电层114创建的边界或由SiP器件156集成到其中的较大电子器件的下面的基板而彼此电耦合。
图3a-3d图示了使用从单元上方引导的单个激光器180去除屏蔽层160的方法。在一个实施例中，激光器180是具有扫描仪182的组件的部分。激光器180和扫描仪182是计算机控制的，并且能够在与载体平行的平面中移动，SiP器件156被放置在所述载体上。控制器使扫描仪182在特别的SiP器件156之上移动，以及然后，在图3a和图3b中，操作激光器组件以去除开放侧156a的顶表面上的屏蔽层160。在其它实施例中，激光器180和扫描仪182保持静止，并且容纳SiP器件156的载体在激光器组件下移动以将烧蚀过程推进到不同的SiP器件。
扫描仪182接收来自激光器180的光束并将光束向下引导到SiP器件156。扫描仪182使激光束在周围移动以均匀地击中要去除的屏蔽层160的所有区域。扫描仪182可以以任何合适的扫描图案（例如，“S”扫描图案或分形扫描图案）移动来自激光器180的光束，以从期望的表面区域去除屏蔽层160。
两步去除过程用于在开放侧156a的顶表面上的屏蔽层160。首先，使用金属剥离过程去除屏蔽层160，由此来自激光器180的光束被散焦并且能量从屏蔽层160的期望部分剥离。金属剥离是一种类型的激光烧蚀。在剥离过程去除期望的屏蔽层160之后，利用设置在低功率水平的激光器180作为清洁过程来执行软激光烧蚀以去除剩余的金属残留物。在其它实施例中，利用激光器180在顶表面上执行单步激光烧蚀过程。
仅SiP器件156的顶表面（与基板110相对）具有在图3a和图3b中去除的屏蔽层。仅部分地去除屏蔽层160以保持与凸缘150的顶部电接触和物理接触，因此维持围绕屏蔽侧156b的侧和屏蔽侧156b的顶部上方的连续屏蔽。在一些实施例中，在图3a和图3b中完成处理之后完成SiP器件156。在一些实施例中，仅打开开放侧156a的顶部足以用于SiP器件156的期望使用。
图3c和图3d示出了在开放侧156a的侧表面上方去除屏蔽层160的进一步处理。激光器180和扫描仪182的组件再次从单元移动到单元，以在SiP器件156的侧表面上执行激光烧蚀。在另一实施例中，不同的激光器用于顶表面和侧表面的烧蚀。可以在移动到另一个器件上之前在每个单独的SiP器件156上执行顶表面和侧表面两者的处理，或者可以在处理任何侧表面之前处理所有SiP器件156的顶表面。
扫描仪182位于开放侧156a的侧表面的平面中，并且用于将来自激光器180的光束沿着侧表面的高度向下引导。激光器180的光束烧蚀屏蔽层160达SiP器件156的整个高度，在所述SiP器件156光束被引导。由扫描仪182使激光器180的光束跨侧表面扫过，以从侧表面完全去除屏蔽层160。在一些实施例中，密封剂130和基板110的一部分连同屏蔽层160被去除。
一旦屏蔽层160的所有期望部分从SiP器件156的侧表面去除，扫描仪182就被移动到要处理的下一个SiP器件。在一些实施例中，针对SiP器件156的每个单独的侧表面重新定位扫描仪182。为了从开放侧156a上方完全去除屏蔽层160，以括号字符（即，]）的形状引导激光器180的光束，垂直地切割穿过SiP器件156的边缘。屏蔽层160保持物理接触凸缘150的侧，以一直维持封闭侧156b周围的连续屏蔽。
图4a和图4b示出了在屏蔽层160从开放侧156a的顶表面和侧表面去除之后的SiP器件156。由在顶上和三个侧上的屏蔽层160和在第四侧上的凸缘150，封装50被完全EMI屏蔽。屏蔽层160在凸缘的整个高度和宽度上接触凸缘150。半导体管芯124具有在SiP模块156的侧表面和顶表面上清除的屏蔽层160，并且因此能够在封装50被完全保护的同时发送和接收无线电信号。
图5a和图5b图示了使用双激光器设置来部分地去除EMI屏蔽层160的方法。在图5a中，在图2h中形成屏蔽层160之后，SiP器件156设置在载体190上。载体190类似于面板100设置于其上的用于屏蔽层160的分割和镀敷的载体。然而，SiP器件156设置在分离的载体上，以允许器件更分散。
在图5b中，双激光器系统用于在开放侧156a上方部分地去除EMI屏蔽160。激光器200通过扫描仪202发射光束，并且激光器204通过扫描仪206发射光束。激光器被定向在SiP器件156的彼此相对的侧上。激光器200能够击中面向图5b的观察者的SiP器件156的表面，并且激光器204能够击中面向远离观察者的SiP器件的表面。激光器200和204都能够击中定向到图5b中的右边和顶部的SiP器件156的表面。激光器200和204可以同时操作以增加吞吐量。
组合地，激光器200和204能够在开放侧156a上击中屏蔽层160的所有部分。扫描仪202和206以任何合适的图案跨SiP器件156的表面扫过，以通过激光烧蚀去除开放侧156a上方的屏蔽层160。每个激光器去除屏蔽层160的总去除面积的近似一半。在已经通过针对给定SiP器件156的烧蚀去除屏蔽层160的所有期望区域之后，移动载体190，使得不同SiP器件设置在激光器200和204之间。完成的器件看起来与图4a和图4b中的SiP器件156基本上相同。
图6a-6d图示了使用一次在单个封装上操作的一个激光器在开放侧156a上方去除EMI屏蔽层160的方法。为了烧蚀，SiP器件156由拾取和放置机器、或者能够围绕任何和所有轴自由旋转SiP器件的另一工具一次一个地拾取。在图6a中，SiP模块156保持在激光器210以及具有朝向激光器定向的顶表面220的扫描仪212下。扫描仪212旋转移动激光束以在开放侧156a上方从顶表面220的部分完全烧蚀屏蔽层160。在一些实施例中使用金属剥离和软激光烧蚀的组合。在单元被拾取和放置机器拾取之前，单元的整个面板的顶表面220可以被烧蚀，正如在图3b中一样。
在图6b中，拾取和放置机器转动封装156以朝向激光器210定向侧表面222。扫描仪212将来自激光器210的光束引导到覆盖表面222并从表面完全去除屏蔽层160。表面222平行于凸缘150的平面定向，因此从表面222完全去除屏蔽层160不暴露凸缘150。在其它实施例中，屏蔽层160的一部分留在表面222上。
在图6c中，SiP器件156再次被拾取和放置机器转动，现在具有朝向激光器210定向的侧表面224。跨表面224的部分在开放侧156a上方扫描激光器210的光束，以通过烧蚀去除屏蔽层160。屏蔽层160被去除直到开放侧156a的边缘，其中屏蔽层接触凸缘150。屏蔽层160保持完全接触凸缘150以改进EMI阻挡。在其它实施例中，凸缘150完全或部分暴露。
最后，在图6d中，利用朝向激光器210定向的侧表面226转动SiP器件156。屏蔽层160在开放侧156a上方从表面226去除。所有侧表面222-226可具有通过金属剥离和软激光烧蚀的组合或通过单个烧蚀步骤去除的屏蔽层160。在SiP器件156的表面220-226全部在开放侧156a上方被烧蚀的情况下，SiP器件156看起来类似于图4a和图4b中的SiP器件。虽然表面220-226被图示为以一个特定的顺序被烧蚀，但是SiP器件156以任何合适的图案旋转来以任何期望的顺序烧蚀表面。
图7示出了使用在单个SiP器件156上操作的单个激光器的激光烧蚀的方法。在图7中，使用容纳SiP器件156的方法，其仅允许器件围绕垂直定向的单个轴230旋转。首先，类似于图6a中所示的步骤，使用由激光器240和扫描仪进行的烧蚀从顶表面220去除屏蔽层160。在顶表面220被烧蚀之后，扫描仪被致动离开激光束的路径，并且来自激光器240的光束被反射镜244反射到扫描仪242。扫描仪242设置到SiP器件156的侧，以允许扫描仪将光束从激光器240引导到SiP器件的侧表面。
在图7中，烧蚀开始于表面224朝向扫描仪242定向。屏蔽层160从表面224去除，并且然后SiP器件156围绕轴230旋转，使得表面222朝向扫描仪定向。扫描仪242扫描来自激光器240的光束以从表面222去除屏蔽层160。在所说明的实施例中，扫描仪242使用具有从左到右进行的垂直扫过的S图案。激光大约是在表面222的烧蚀完成的中间。一旦在表面222上完成了屏蔽层160的烧蚀，SiP器件156就将再次围绕轴230旋转以在表面226上执行烧蚀。在一些实施例中，扫描仪242仅用于在垂直方向上扫描激光束，并且在水平方向上的扫描是通过围绕轴230旋转SiP模块156来执行的。一旦在所有期望的表面上完成烧蚀，SiP模块156看起来与图4a和图4b中的模块基本上相同。
图8a-8f图示了将薄层掩模与激光烧蚀组合以去除开放侧156a上方的屏蔽层160的方法。在2018年8月29日提交的美国专利申请No.16/116,485中较充分地解释了使用薄层掩模来执行部分屏蔽层去除，所述申请通过引用并入本文中。图8a和图8b分别示出了具有设置在每个SiP器件156的开放侧156a上方的薄层252的面板100的横截面和立体图。薄层252是粘性带、金属箔薄层、金属箔带、聚酰亚胺薄层或任何其它合适的薄层掩模。在其它实施例中，金属、塑料或硅树脂掩模用于薄层252。
薄层252选项中的任一个可包括粘合剂以提供薄层到密封剂130的机械附接。粘合剂可以是紫外线（UV）释放、热释放或以其它方式配置成允许薄层252的便利去除。薄层252也可以是通过任何适当的薄膜沉积技术沉积的任何合适的绝缘、钝化或光刻胶层。薄层252被施加在密封剂130上的面板100的顶表面上方并且与凸缘150平行地延伸。凸缘150保持从薄层252暴露，使得屏蔽层160将接触凸缘，以形成连续的EMI屏蔽。
在将面板100分割成单独单元之前，在开放侧156a上方的条带中施加薄层252。在其它实施例中，在分割之后施加薄层252。薄层252与凸缘150平行地沿面板100的整个长度延伸，并且从每个凸缘垂直地跨面板100延伸到相邻的锯道102。因此，每个SiP器件156的开放侧156a被薄层252完全覆盖。在其它实施例中，仅每个开放侧156a的一部分被薄层252覆盖。薄层252可以直接作为小的薄层的补片施加在每个半导体管芯124上方，而不延伸到凸缘150或任何锯道102。
在图8c和图8d中，以与图2h中的方式基本相同的方式沉积屏蔽层160。整个SiP器件156（包括薄层252）被覆盖在屏蔽层160中。在图8e和图8f中，通过去除薄层252而不是利用如以上实施例中的激光剥离或激光烧蚀从开放侧156a的顶表面去除屏蔽层160。薄层252的机械剥离还去除在薄层的顶部上的屏蔽层160的部分，因此在开放侧156a上方的屏蔽层中创建开口。然后使用任何以上激光烧蚀方法在SiP器件156的侧表面上方去除屏蔽层160。
图9a-9c示出了用于去除屏蔽层160的三个非限制性配置。虽然以上实施例全部示出了在开放侧156a的所有表面上方完全去除屏蔽层160，但是一些实施例将受益于仅部分地去除屏蔽层。在开放侧156a上方留下屏蔽层160的一部分可以帮助引导来自开放侧的广播，并且帮助减少来自某些方向的开放侧156a中的EMI。
在图9a中，仅从顶表面220和侧表面222的中心而不是那些表面的端去除屏蔽层160。另外，屏蔽层160不从侧表面224和226去除。在开放侧156a的端处保留的屏蔽层160的部分保护开放侧免受EMI，同时仍然允许有意地通过其发射信号。
图9b示出了仅保留在表面220和222的中间部分上的屏蔽层160，同时在端处和在表面224和226上去除屏蔽层160。图9c示出了仅在开放侧156a的一端处去除的屏蔽层160。可以以任何期望的图案从开放侧156a上方去除屏蔽层160。
图10a和图10b图示了在通过以上描述的过程中的任何过程形成部分屏蔽层之后将SiP器件156并入电子器件中。图10a图示了作为电子器件的部分安装到PCB或其它基板342上的来自图4a和图4b的SiP器件156的部分横截面。凸块116被回流到PCB 342的导电层344上以将SiP器件156物理地附接以及电连接到PCB。在其它实施例中，使用热压或其它合适的附接和连接方法。可以通过柱形凸块、焊区、引脚、接合线或任何其它合适的互连结构而不是凸块来提供互连。在一些实施例中，在SiP器件156和PCB 342之间使用粘合剂或底部填充层。半导体管芯124和封装50通过导电层114和凸块116电耦合到导电层344和彼此。
图10b图示了包括PCB 342的电子器件340，所述PCB 342具有安装在PCB的表面上的多个半导体封装，包括SiP器件156。取决于应用，电子器件340可以具有一种类型的半导体封装或多种类型的半导体封装。
电子器件340可以是使用半导体封装来执行一个或多个电功能的独立系统。可替代地，电子设备340可以是较大系统的子部件。例如，电子器件340可以是平板计算机、蜂窝电话、数字相机、通信系统或其它电子设备的一部分。电子器件340还可以是图形卡、网络接口卡或插入到计算机中的其它信号处理卡。半导体封装可包括微处理器、存储器、ASIC、逻辑电路、模拟电路、RF电路、分立有源或无源器件或其它半导体管芯或电部件。
在图10b中，PCB 342提供用于安装在PCB上的半导体封装的结构支撑和电互连的通用基板。使用蒸发、电解镀敷、无电镀镀敷、屏幕印刷或其它合适的金属沉积过程在PCB342的表面上方或层内形成导电信号迹线344。信号迹线344提供半导体封装、安装的部件和其它外部系统或部件之间的电通信。迹线344还根据需要向半导体封装提供功率和接地连接。
在一些实施例中，半导体器件具有两个封装级。第一级封装是用于将半导体管芯机械和电附接到中间基板的技术。第二级封装涉及将中间基板机械和电附接到PCB 342。在其它实施例中，半导体器件可以仅具有第一级封装，其中管芯被直接机械和电安装到PCB342。
为了说明的目的，在PCB 342上示出了若干种类型的第一级封装，包括接合线封装346和倒装芯片348。附加地，若干种类型的第二级封装，包括球栅阵列（BGA）350、凸块芯片载体（BCC）352、LGA 356、多芯片模块（MCM）358、四方扁平无引线封装（QFN）360和晶片级芯片尺寸封装（WLCSP）366被示出为连同SiP器件156一起安装在PCB 342上。导电迹线344将设置在PCB 342上的各种封装和部件电耦合到SiP器件156，从而将SiP器件内的部件用于PCB上的其它部件。
取决于系统要求，利用第一和第二级封装形式的任何组合配置的半导体封装的任何组合以及其它电子部件可以连接到PCB 342。在一些实施例中，电子器件340包括单个附接的半导体封装，而其它实施例要求多个互连的封装。通过在单个基板上方组合一个或多个半导体封装，制造商可将预先制作的部件并入到电子器件和系统中。因为半导体封装包括复杂的功能性，所以可以使用较便宜的部件和流水线制造过程来制造电子器件。所产生器件不太可能出故障且制造较便宜，从而导致消费者的较低成本。
虽然已详细说明了本发明的一个或多个实施例，但技术人员将领会的是，可在不脱离如所附权利要求中所阐述的本发明的范围的情况下对那些实施例进行修改和调整。

Claims (17)

1.一种制造半导体器件的方法，包括：
提供基板；
在所述基板上方设置第一部件和第二部件，其中所述第一部件包括天线；
在所述基板上方在所述第一部件和所述第二部件之间设置凸缘；
在所述基板和凸缘上方沉积密封剂；
在所述密封剂上方并与所述凸缘接触来形成EMI屏蔽层；
使用激光烧蚀去除所述第一部件的第一表面上方的所述EMI屏蔽层的第一部分；
在去除所述EMI屏蔽层的所述第一部分之后旋转所述半导体器件；以及
在旋转所述半导体器件之后去除所述密封剂的第二表面上方的所述EMI屏蔽层的第二部分。
2.根据权利要求1所述的方法，还包括通过金属剥离类型的激光烧蚀去除在所述密封剂的第一部分上方的所述EMI屏蔽层的所述第一部分。
3.根据权利要求2所述的方法，还包括在所述金属剥离类型的激光烧蚀之后在所述密封剂的所述第一部分上方执行软激光烧蚀以去除剩余金属残留物。
4.根据权利要求1所述的方法，还包括：
使用第一激光器去除所述EMI屏蔽层的所述第一部分；以及
使用第二激光器去除所述EMI屏蔽层的第二部分。
5.根据权利要求4所述的方法，还包括：
使用垂直于所述密封剂的第一表面定向的第一激光束从所述密封剂的所述第一表面去除所述EMI屏蔽层的所述第一部分；以及
使用平行于所述密封剂的第二表面并且垂直于所述密封剂的所述第一表面定向的第二激光束从所述密封剂的所述第二表面去除所述EMI屏蔽层的第二部分。
6.一种制造半导体器件的方法，包括：
提供基板；
在所述基板上方设置凸缘；
在所述基板和凸缘上方沉积密封剂；
在所述密封剂上方并且耦合到所述凸缘来形成导电层，其中所述导电层为EMI屏蔽层；
使用金属剥离类型的激光烧蚀去除所述导电层的第一部分，接着使用软激光烧蚀以去除剩余金属残留物；
在去除所述导电层的所述第一部分之后旋转所述半导体器件；以及
在旋转所述半导体器件之后使用激光烧蚀去除所述导电层的第二部分。
7.根据权利要求6所述的方法，其中所述导电层的所述第二部分与所述导电层的所述第一部分不连续。
8.根据权利要求6所述的方法，还包括去除在嵌入在所述密封剂中的天线上方的所述导电层的所述第一部分。
9.根据权利要求6所述的方法，还包括利用与所述导电层平行定向的激光束来执行激光烧蚀。
10.一种制造半导体器件的方法，包括：
提供基板；
在所述基板上方沉积密封剂；
在所述密封剂上方形成导电层，其中所述导电层为EMI屏蔽层；
使用第一激光烧蚀过程去除所述导电层的第一部分，其中所述导电层的所述第一部分形成在所述密封剂的第一表面上方；以及
使用第二激光烧蚀过程去除所述导电层的第二部分，其中所述导电层的所述第二部分形成在所述密封剂的垂直于所述第一表面的第二表面上方。
11.根据权利要求10所述的方法，还包括：
在所述基板上方设置凸缘；
在所述凸缘上方沉积所述密封剂；以及
与所述凸缘接触来形成所述导电层。
12.根据权利要求10所述的方法，其中所述第一激光烧蚀过程包括：
剥离所述导电层的所述第一部分；以及
利用减少的功率烧蚀所述导电层的所述第一部分。
13.根据权利要求10所述的方法，还包括与所述导电层的所述第一部分同时地去除所述导电层的所述第二部分。
14.一种制造半导体器件的方法，包括：
提供半导体封装；
在所述半导体封装上方形成屏蔽层；
使用第一激光器去除在所述半导体封装的第一表面上方的所述屏蔽层的第一部分；以及
使用第二激光器去除在所述半导体封装的第二表面上方的所述屏蔽层的第二部分，其中所述第二表面不平行于所述第一表面。
15.根据权利要求14所述的方法，还包括与所述屏蔽层的所述第一部分同时地去除所述屏蔽层的所述第二部分。
16.根据权利要求14所述的方法，还包括去除在所述半导体封装中的天线上方的所述屏蔽层的所述第一部分。
17.根据权利要求14所述的方法，还包括形成与所述半导体封装的凸缘接触的所述屏蔽层。
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