CN111379022A - Device for cooling silicon core drawing area during drawing of silicon core - Google Patents
Device for cooling silicon core drawing area during drawing of silicon core Download PDFInfo
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- CN111379022A CN111379022A CN202010238872.7A CN202010238872A CN111379022A CN 111379022 A CN111379022 A CN 111379022A CN 202010238872 A CN202010238872 A CN 202010238872A CN 111379022 A CN111379022 A CN 111379022A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 167
- 238000001816 cooling Methods 0.000 title claims abstract description 34
- 238000007664 blowing Methods 0.000 claims abstract description 28
- 238000002425 crystallisation Methods 0.000 claims abstract description 19
- 230000008025 crystallization Effects 0.000 claims abstract description 19
- 239000007789 gas Substances 0.000 claims description 68
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 32
- 239000000112 cooling gas Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 13
- 238000003466 welding Methods 0.000 claims description 11
- 238000009826 distribution Methods 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 239000013078 crystal Substances 0.000 abstract description 19
- 239000000110 cooling liquid Substances 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000002994 raw material Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 238000004080 punching Methods 0.000 description 4
- 239000000155 melt Substances 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A device for cooling a silicon core drawing area when drawing silicon cores relates to the field of artificial crystals, a cooling liquid passage cools the lower part of a gate valve, so that the reliability of the use of the gate valve is improved, the service life of the gate valve is effectively improved, then a throttle valve (10) is respectively arranged at the air inlet end of each air blowing pipe (3), the air blowing amount of drawing holes with different crystallization temperatures can be adjusted, thus the crystallization temperature of each crystallization area can be ensured to be consistent, further, the simultaneous drawing of a plurality of silicon cores is realized, the quality of the silicon cores is effectively ensured, and the like, the rapid and uniform cooling of the silicon cores can improve the drawing speed of the crystals and increase the diameter of the drawn silicon cores, the diameter of the silicon cores is increased, the later growth speed in a reducing furnace is accelerated, so that the production efficiency is improved, and the like, the device has the advantages of simple structure, good use effect, and the like, is suitable for wide popularization and application.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the field of artificial crystals, in particular to a device for cooling a silicon core drawing area during drawing of a silicon core.
[ background of the invention ]
As is known, in the preparation of silicon core, a seed crystal is generally used for seeding, and after seeding is completed, the silicon core is pulled. In this process, the seed crystal needs to be held by the seed chuck. After the high-frequency coil melts the end of the raw material rod into liquid, the seed crystal chuck drives the seed crystal to descend, the seed crystal penetrates through the drawing hole of the high-frequency coil and then is inserted into the solution at the upper end of the raw material rod, the seed crystal is driven to ascend through the seed crystal chuck, the seed crystal drives the solution to ascend and recrystallize, and finally the silicon core with the required length is formed.
In the process that the seed crystal lifts with the melt, the melt is gradually cooled and recrystallized after leaving the drawing hole of the high-frequency coil. At the moment, the lifting speed of the upper shaft for driving the seed crystal to rise is lower, taking the drawing of the silicon core with the diameter of &8mm as an example, when the silicon core with the diameter of &8mm is drawn, the lifting speed of the upper shaft is about 14mm/min, when the silicon core with the diameter of &10mm is drawn, the lifting speed of the upper shaft is about 12mm/min, and the diameter of the drawn silicon core is generally between &8 and &15 mm. The larger the diameter of the drawn silicon core is, the faster the silicon core grows in the reducing furnace in the later period, and the higher the production efficiency is, so that how to improve the production efficiency of the silicon core and increase the diameter of the silicon core becomes one of the technical requirements in the field.
Meanwhile, in order to improve the drawing efficiency of the silicon core, the silicon core is taken and placed under the condition that the silicon core furnace is not stopped, a gate valve is mostly arranged between a lower furnace chamber and a middle furnace chamber of the silicon core furnace, after a group of silicon cores are drawn, the gate valve is closed, the lower furnace chamber below the gate valve is kept in a vacuum state, then doors of the middle furnace chamber and the upper furnace chamber are opened, the prepared silicon core is taken out, then the upper furnace door and the middle furnace door are closed, the middle furnace chamber and the upper furnace chamber are vacuumized and filled with argon, then the gate valve is opened, a new round of drawing of the silicon core is started, and the like. However, the existing gate valve has the defects that the gate valve is difficult to open and close under long-term high-temperature work due to overlarge heat of the lower furnace chamber, and can be damaged in severe cases.
In order to solve the above problems, there are related patent applications (the patent name "a device for increasing the crystallization rate of silicon core when silicon core is drawn"; patent application No. 201720154782.3, application date of 2017, 02 and 21, publication No. CN 206494987U). The application effectively improves the crystallization speed of the silicon core by means of a blowing device, and the application is used as reference in the application.
Although the problem that the silicon core crystallization speed is low is solved by the application, in the process of drawing the silicon core, because the gas flow of each gas blowing pipe is not adjustable (namely the gas blowing quantity of each gas blowing pipe is the same), because the temperature of the drawing hole corresponding to each gas blowing pipe is not consistent, when the gas blowing quantities are the same, the crystallization speed of the newly drawn silicon core is inconsistent, the quality of the silicon core is influenced, and in severe cases, part of the silicon core is scrapped. Most importantly, the above patent cannot cool the gate valve at the same time, and how to provide a device for cooling the silicon core drawing area when the silicon core is drawn is a long-term technical appeal for those skilled in the art.
[ summary of the invention ]
In view of the defects in the background art, the invention discloses a device for cooling a silicon core drawing area during drawing of a silicon core.
In order to achieve the purpose, the invention adopts the following technical scheme:
a device for cooling a silicon core drawing area during silicon core drawing comprises a plate body and air blowing pipes, wherein a downward-recessed upper groove is formed in the upper surface of the plate body, a plurality of upward-extending silicon core perforation fixing columns are arranged at intervals on the upper portion of the bottom surface of the upper groove, silicon core perforations penetrating to the lower surface of the plate body are respectively arranged on the silicon core perforation fixing columns, a plurality of cooling air passages are arranged in the bottom surface of the upper groove, an air outlet of each cooling air passage is respectively connected with an air inlet end of the air blowing pipe arranged below the plate body, an air outlet end of each air blowing pipe respectively corresponds to a crystallization area of a silicon core, an air inlet of each cooling air passage respectively penetrates to the outer edge surface of the plate body, each air inlet is respectively connected with an air outlet end of a throttle valve, an air inlet end of each throttle valve is respectively connected with an air distribution outlet of a main air passage arranged below the plate body, the inner edge surface of the upper groove is provided with water inlets and water outlets at intervals, the water inlets and the water outlets are respectively connected with a water inlet pipe and a water outlet pipe, an upper cover plate is arranged on the upper surface of the upper groove, and the upper cover plate is provided with a plurality of through holes which correspond to the silicon core through holes one to form the device for cooling the silicon core drawing area during the silicon core drawing.
The device for cooling the silicon core drawing area during the silicon core drawing comprises a plurality of silicon core perforation fixing columns, wherein one silicon core perforation fixing column is arranged in the middle of the silicon core perforation fixing columns, and the rest of the silicon core perforation fixing columns are uniformly distributed on the periphery of the middle silicon core perforation fixing column.
The device for cooling the silicon core drawing area during the drawing of the silicon core is characterized in that a guide plate is arranged between the middle silicon core perforation fixed column and the silicon core perforation fixed column on the periphery of the middle silicon core perforation fixed column, and the guide plate is positioned between the water inlet and the water outlet.
The device for cooling the silicon core drawing area during the drawing of the silicon core is characterized in that a sleeve is arranged in the silicon core through hole.
The device for cooling the silicon core drawing area during the drawing of the silicon core is characterized in that a plurality of welding fixing columns protruding upwards are arranged on the bottom surface of an upper groove at the periphery of the silicon core perforation fixing column.
The device for cooling the silicon core drawing area during the drawing of the silicon core is characterized in that the middle of the welding and fixing column is provided with a vent hole penetrating to the lower surface of the plate body.
The device for cooling the silicon core drawing area during the drawing of the silicon core is characterized in that the cooling gas channel is structurally characterized in that a cooling gas channel which is sunken downwards is arranged on the bottom surface of the upper groove, and a cooling gas channel cover plate is arranged at an upper port of the cooling gas channel.
The device for cooling the silicon core drawing area during the drawing of the silicon core is characterized in that the cooling gas passage is replaced by a metal pipe.
The device for cooling the silicon core drawing area during the drawing of the silicon core is characterized in that a sunken main air passage is arranged below a plate body, a plurality of gas diversion channels and a main air inlet are respectively arranged on the inner edge surface of the main air passage, a gas diversion outlet of each gas diversion channel is respectively arranged on the outer edge surface of the plate body, and a main air passage cover plate is arranged at the opening end of the main air passage.
The device for cooling the silicon core drawing area during drawing of the silicon core is characterized in that a quartz plate is arranged below the plate body through a connecting rod, a plurality of silicon core limiting holes are formed in the quartz plate, and each silicon core limiting hole corresponds to a silicon core through hole.
Due to the adoption of the technical scheme, the invention has the following beneficial effects:
the cooling liquid passage cools the lower part of the gate valve, so that the use reliability of the gate valve is improved, the service life of the gate valve is effectively prolonged, and the like, then the air inlet end of each air blowing pipe is respectively provided with a throttle valve, the air blowing quantity of drawing holes with different crystallization temperatures can be adjusted, so that the crystallization temperature of each crystallization area can be ensured to be consistent, and further a plurality of silicon cores can be drawn simultaneously, the quality and the like of the silicon cores are effectively ensured, the drawing speed of crystals can be improved by rapidly and uniformly cooling the silicon cores, the diameter of the drawn silicon cores is increased, the diameter of the silicon cores is increased, the later growth speed of the silicon cores in a reducing furnace is accelerated, and the production efficiency and the like are improved.
[ description of the drawings ]
FIG. 1 is a schematic front view of the present invention;
FIG. 2 is a schematic top view of the present invention;
FIG. 3 is a schematic bottom view of the present invention;
FIG. 4 is a schematic structural diagram of a plate body according to the present invention;
FIG. 5 is a schematic view of the arrangement of the cooling gas passage cover plate according to the present invention;
FIG. 6 is a schematic view of the overall airway structure of the present invention;
FIG. 7 is a schematic view of the arrangement structure of the total gas channel cover plate in the present invention;
in the figure: 1. a plate body; 2. a gas distributing nozzle; 3. an air blowing pipe; 4. a connecting rod; 5. a quartz plate; 6. connecting holes; 7. welding a fixing column; 8. perforating a silicon core; 9. an upper cover plate; 10. a throttle valve; 11. a water inlet; 12. a water outlet; 13. an air outlet; 14. a cooling gas channel; 15. a gas split outlet; 16. an air inlet; 17. a cooling gas channel cover plate; 18. a total airway; 19. a total air inlet; 20. a main air passage cover plate; 21. a platform; 22. a baffle.
[ detailed description ] embodiments
The present invention will be explained in more detail by the following examples, which are intended to disclose all changes and modifications within the scope of the present invention, and the present invention is not limited to the following examples;
with reference to the accompanying drawings 1-7, the device for cooling the silicon core drawing area during the silicon core drawing comprises a plate body 1 and an air blowing pipe 3, wherein a downward-concave upper groove is arranged on the plate body 1, the upper groove is in a circular structure, a plurality of upward-extending silicon core perforation fixing columns are arranged at intervals on the upper part of the bottom surface of the upper groove, the plurality of silicon core perforation fixing columns are distributed in such a way that a silicon core perforation fixing column is arranged in the middle, the rest of the silicon core perforation fixing columns are uniformly distributed on the periphery of the middle silicon core perforation fixing column, the distribution of the silicon core perforation fixing columns is consistent with the distribution of drawing holes on a high-frequency coil, namely the number and the positions of the silicon core perforation fixing columns are consistent with the drawing holes on the high-frequency coil, the embodiment given by the accompanying drawings 2 of the invention is that the silicon core perforation fixing columns are eight, namely the number of the drawing holes of the high-frequency, the silicon core punching fixing column can be used for drawing 1-8 silicon cores, each silicon core punching fixing column is provided with a silicon core punching hole 8 penetrating to the lower surface of the plate body 1, and further, in order to prolong the service life of the plate body, a replaceable sleeve is arranged in each silicon core punching hole 8.
Furthermore, a plurality of welding fixing columns 7 protruding upwards are arranged on the bottom surface of the upper groove on the periphery of the silicon core perforation fixing column, and the middle parts of the welding fixing columns 7 are provided with air holes penetrating to the lower surface of the plate body 1.
Further, a plurality of cooling gas passages are arranged on the bottom surface of the upper groove, the cooling gas passages are formed by arranging a cooling gas channel 14 which is sunken downwards on the bottom surface of the upper groove, and a cooling gas channel cover plate 17 is arranged at the upper end opening of the cooling gas channel 14 in a welding mode. Or the cooling gas passage is replaced by a metal pipe, preferably a stainless steel pipe during implementation, the stainless steel pipe can be round or square, and can be welded on the bottom surface of the upper groove or be annularly embedded in a metal pipe fixing groove on the bottom surface of the upper groove, a gas outlet 13 of each cooling gas passage is respectively connected with a gas inlet end of a gas blowing pipe 3 arranged below the plate body 1, a gas outlet end of each gas blowing pipe 3 respectively corresponds to a crystallization area of a silicon core, a gas inlet 16 of each cooling gas passage respectively penetrates through the outer edge surface of the plate body 1, each gas inlet 16 is respectively connected with a gas outlet end of a throttle valve 10 through a gas distribution nozzle 2, a gas distribution outlet 15 of a main gas passage arranged below the plate body 1 is respectively connected with a gas inlet 19 of the main gas passage, and the gas source can select helium gas and neon gas, When the system is implemented specifically, the main gas inlet 19 may be connected to the gas outlet end of the main throttle valve 6, and the gas inlet end of the main throttle valve 6 is connected to a gas source through a pipeline.
Further, a water inlet 11 and a water outlet 12 are arranged on the inner edge surface of the upper groove at intervals, the water inlet 11 and the water outlet 12 are respectively connected with a water inlet pipe and a water outlet pipe, an upper cover plate 9 is arranged on the upper groove, a cooling liquid passage is formed between the upper cover plate 9 and the upper groove in a welding mode, a plurality of through holes which correspond to the silicon core through holes 8 in a one-to-one mode are arranged on the upper cover plate 9, each through hole is respectively welded with a silicon core through hole fixing column, in the implementation process, when the welding fixing columns 7 are arranged, the through holes which correspond to the upper cover plate 9 are also respectively arranged on the upper cover plate, and then the through holes and the welding fixing columns 7 are welded to form the device for cooling the.
Further, a guide plate 22 for guiding cooling liquid is arranged between the middle silicon core perforation fixing column and the silicon core perforation fixing column on the periphery of the middle silicon core perforation fixing column, the guide plate 22 is located between the water inlet 11 and the water outlet 12, the arrangement of the guide plate 22 is shown in fig. 4 and 5, the main purpose of the guide plate is to prevent the cooling liquid from directly flowing out of the water outlet 12 after entering from the water inlet 11, namely, the guide plate has the function of shunting the cooling medium entering into the channel into the whole upper groove.
Further, the structure of the main gas path is that a recessed main gas path 18 is arranged below the plate body 1, a plurality of gas distribution channels and a main gas inlet 19 are respectively arranged on the inner edge surface of the main gas path 18, the gas distribution outlet 15 of each gas distribution channel is respectively arranged on the outer edge surface of the plate body 1, and a main gas path cover plate 20 is arranged at the open end of the main gas path 18 in a welded manner. The alternative structure of the main gas circuit is that a metal pipe is arranged below the plate body 1, two ends of the metal pipe are closed, then a main gas inlet 19 and a gas branch outlet 15 are arranged on the metal pipe, and the metal pipe can be welded below the plate body 1.
Further, the silicon core drawn by the air blowing pipe 3 shakes due to the fact that air blown out of the air blowing pipe 3, and the shaking situation becomes more and more obvious along with the increase of the length of the silicon core drawn, therefore, a quartz plate 5 is arranged below the plate body 1 through a connecting rod 4, a plurality of silicon core limiting holes are formed in the quartz plate 5, each silicon core limiting hole corresponds to a silicon core through hole 8, and therefore the silicon core can be guaranteed not to shake during drawing.
Further, in practice, a platform 21 may be provided on the outer edge surface of the plate body 1, and then the gas distribution outlet 15 and the gas inlet 16 may be provided on the platform 21.
During specific implementation, the device is arranged below a gate valve and used for cooling gas of the silicon cores, the cooling gas after being divided by the main gas channel 18 enters the cooling gas channel 14 after the gas blowing amount is adjusted by the throttle valve 10, then enters the gas blowing pipe 3 through the cooling gas channel 14, and finally is blown to the crystallization area of the silicon cores through the gas blowing pipe 3, so that the crystallization uniformity of each silicon core is ensured.
As mentioned above, the main idea of the invention is to use the throttle valve 10 to control the air blowing amount of the air outlet of each air blowing pipe 3 respectively, so as to meet the requirement of consistent crystallization temperature of the drawing holes with different temperatures, thereby realizing the simultaneous drawing of a plurality of silicon cores and ensuring the drawing qualification rate of each silicon core. The gate valve positioned on the device is cooled through the cooling liquid channel, so that the stable work of the gate valve is ensured.
Taking a silicon core furnace for drawing a silicon core as an example, after the upper end of a raw material rod in the furnace body is melted, seed crystals driven by a seed crystal chuck slowly penetrate through drawing holes in a high-frequency coil through a control system and are inserted into a molten liquid at the upper end of the raw material rod, after the end of the seed crystals and the molten liquid at the upper end of the raw material rod are integrated, the seed crystals driven by the seed crystal chuck are slowly lifted through the control of the control system, and after the molten liquid leaves the drawing holes in the high-frequency coil, the crystallization is gradually started to form the required silicon core. At the moment, the air inlet valve is opened through the control system, argon enters the main air passage 18, then the argon enters each air blowing pipe 3 after being regulated by each throttle valve 10, and then the argon blows the gas to the crystallization area of the silicon core through the air blowing pipes 3, so that the crystallization area is rapidly cooled. And meanwhile, the water inlet valve is opened, cooling water enters the cooling liquid passage from the water inlet 11 and is discharged from the water outlet 12 after the cooling liquid passage bypasses, and during specific implementation, the cooling water can be replaced by cooling gas, namely, a water source is replaced by a gas source.
The details of the above are not described in detail since they are prior art.
The embodiments selected for the purpose of disclosing the invention are presently considered to be suitable, however, it should be understood that the invention is intended to cover all variations and modifications of the embodiments falling within the spirit and scope of the present inventive concept.
Claims (10)
1. The utility model provides a device that is used for silicon core drawing to cool off silicon core drawing district when drawing, includes plate body (1) and gas blow pipe (3), characterized by: an upper groove which is concave downwards is arranged on the plate body (1), a plurality of silicon core perforation fixing columns which extend upwards are arranged at intervals on the upper part of the bottom surface of the upper groove, silicon core perforations (8) which penetrate to the lower surface of the plate body (1) are respectively arranged on each silicon core perforation fixing column, a plurality of cooling gas passages are arranged on the bottom surface of the upper groove, a gas outlet (13) of each cooling gas passage is respectively connected with a gas inlet end of a gas blowing pipe (3) arranged below the plate body (1), a gas outlet end of each gas blowing pipe (3) is respectively corresponding to a crystallization area of a silicon core, a gas inlet (16) of each cooling gas passage respectively penetrates to the outer edge surface of the plate body (1), each gas inlet (16) is respectively connected with a gas outlet end of a throttle valve (10), a gas inlet end of each throttle valve (10) is respectively connected with a gas distribution outlet (15) of a main gas passage arranged, the device is characterized in that a main air inlet (19) of the main air path is connected with an air source, water inlets (11) and water outlets (12) are arranged on the inner edge surface of the upper groove at intervals, the water inlets (11) and the water outlets (12) are respectively connected with a water inlet pipe and a water outlet pipe, an upper cover plate (9) is arranged on the upper groove, and a plurality of through holes which correspond to the silicon core through holes (8) one to one are formed in the upper cover plate (9) to form a device for cooling a silicon core drawing area during silicon core drawing.
2. The device for cooling the silicon core drawing area in the silicon core drawing process as claimed in claim 1, wherein: the silicon core perforation fixing columns are distributed in such a way that one silicon core perforation fixing column is arranged in the middle, and the rest of the silicon core perforation fixing columns are uniformly distributed on the periphery of the middle silicon core perforation fixing column.
3. The device for cooling the silicon core drawing area in the silicon core drawing process as claimed in claim 2, wherein: a guide plate (22) is arranged between the middle silicon core perforation fixing column and the silicon core perforation fixing column on the periphery of the middle silicon core perforation fixing column, and the guide plate (22) is positioned between the water inlet (11) and the water outlet (12).
4. The device for cooling the silicon core drawing area in the silicon core drawing process as claimed in claim 1, wherein: a sleeve is arranged in the silicon core through hole (8).
5. The device for cooling the silicon core drawing area in the silicon core drawing process as claimed in claim 1, wherein: and a plurality of welding fixing columns (7) protruding upwards are arranged on the bottom surface of the upper groove at the periphery of the silicon core through hole fixing column.
6. The device for cooling the silicon core drawing area in the silicon core drawing process as claimed in claim 5, wherein: the middle part of the welding fixing column (7) is provided with a vent hole which penetrates to the lower surface of the plate body (1).
7. The device for cooling the silicon core drawing area in the silicon core drawing process as claimed in claim 1, wherein: the structure of the cooling gas channel is that a cooling gas channel (14) which is sunken downwards is arranged on the bottom surface of the upper groove, and a cooling gas channel cover plate (17) is arranged at the upper port of the cooling gas channel (14).
8. The device for cooling the silicon core drawing area in the silicon core drawing process as claimed in claim 1, wherein: the alternative structure of the cooling gas passage is that the cooling gas passage is a metal tube.
9. The device for cooling the silicon core drawing area in the silicon core drawing process as claimed in claim 1, wherein: the structure of total gas circuit is for being equipped with sunken total air flue (18) below plate body (1), is equipped with a plurality of gas reposition of redundant personnel passageways and a total air inlet (19) respectively on the inner edge face of total air flue (18), and the gas reposition of redundant personnel export (15) of every gas reposition of redundant personnel passageway set up respectively on the outer edge face of plate body (1), is equipped with total air flue apron (20) at the open end of total air flue (18).
10. The device for cooling the silicon core drawing area in the silicon core drawing process as claimed in claim 1, wherein: the silicon chip limiting structure is characterized in that a quartz plate (5) is arranged below the plate body (1) through a connecting rod (4), a plurality of silicon chip limiting holes are formed in the quartz plate (5), and each silicon chip limiting hole corresponds to a silicon chip through hole (8).
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| CN202010238872.7A CN111379022A (en) | 2020-03-30 | 2020-03-30 | Device for cooling silicon core drawing area during drawing of silicon core |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113481589A (en) * | 2021-07-08 | 2021-10-08 | 牛伟 | Cooling device for simultaneously drawing multiple silicon cores by using crushed silicon materials |
| CN116607207A (en) * | 2023-07-20 | 2023-08-18 | 山东豪迈机械制造有限公司 | Manufacturing equipment and manufacturing method of tubular silicon core |
| WO2023179627A1 (en) * | 2022-03-21 | 2023-09-28 | 洛阳长缨新能源科技有限公司 | Crystal cooling apparatus for simultaneously drawing multiple crystals and artificial crystal preparation device |
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| WO2023179627A1 (en) * | 2022-03-21 | 2023-09-28 | 洛阳长缨新能源科技有限公司 | Crystal cooling apparatus for simultaneously drawing multiple crystals and artificial crystal preparation device |
| CN116607207A (en) * | 2023-07-20 | 2023-08-18 | 山东豪迈机械制造有限公司 | Manufacturing equipment and manufacturing method of tubular silicon core |
| CN116607207B (en) * | 2023-07-20 | 2023-10-10 | 山东豪迈机械制造有限公司 | Manufacturing equipment and manufacturing method of tubular silicon core |
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