CN206494987U - A kind of blowning installation drawn for silicon core - Google Patents
A kind of blowning installation drawn for silicon core Download PDFInfo
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- CN206494987U CN206494987U CN201720154782.3U CN201720154782U CN206494987U CN 206494987 U CN206494987 U CN 206494987U CN 201720154782 U CN201720154782 U CN 201720154782U CN 206494987 U CN206494987 U CN 206494987U
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- inlet channel
- silicon core
- air
- blowning installation
- blowing nozzle
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Abstract
A kind of blowning installation drawn for silicon core, is related to artificial crystal, and the utility model sets a blowing nozzle around each silicon core（6）, multiple gas holes are opened up on blowing nozzle（11）, make uniformly to blow to every silicon core along multiple directions from the gas that gas hole is blown out, the utility model solves the problem of silicon core inhomogeneous cooling is even in the prior art.The Quick uniform cooling of silicon core can improve the draw rate of crystal, increase the diameter of drawn silicon core, and the increasing of silicon core diameter, again accelerate the speed of growth of its later stage in reduction furnace, which thereby enhance production efficiency.
Description
【Technical field】
The utility model is related to artificial crystal, and in particular to one kind is used to improve silicon core crystallization rate when silicon core is drawn
Blowning installation.
【Background technology】
It is general to carry out seeding using seed crystal in the silicon core pulling process of prior art.Treat to carry out silicon again after the completion of seeding
The drawing of core.In the process, seed crystal needs to clamp by seedholder.Treat that high frequency coil is local melting by the termination of fuel rod
Into after liquid, seedholder drives seed crystal to decline, through the drawing hole of high frequency coil after insertion fuel rod upper end solution in.With
Seed crystal is driven to rise by seedholder afterwards, seed crystal drives solution to rise and recrystallize, the silicon core of length needed for ultimately forming.
In seed crystal with melting during liquid rises, lay equal stress on when melting liquid and leaving gradually cool down after the drawing hole of high frequency coil
New crystallization.Now drive the lifting speed for the upper axle that seed crystal rises slower, when drawing a diameter of ￠ 8mm silicon core, upper axle is carried
Lifting speed is 14mm/min, when drawing a diameter of ￠ 10mm silicon core, and the lifting speed of upper axle is 12mm/min, drawing silicon core
Diameter is general all between 8~￠ of ￠ 10mm.The silicon core diameter drawn is bigger, and the speed of growth of its later stage in reduction furnace is got over
It hurry up, production efficiency is higher, so how to improve the production efficiency of silicon core and the diameter of increase silicon core just into the technology of this area
One of demand.
For above-mentioned technical problem, applicant proposed " device that silicon core crystallization rate is improved during a kind of drawing silicon core "
Patent application（It is on 04 21st, 2014, Publication No. the 201410175547.5, applying date that number of patent application, which is,
CN105002556A）.This application is by means of a blowning installation（Concrete structure refers to accompanying drawing 1）, effectively raise the knot of silicon core
Brilliant speed, this application is used as reference in this application.
Although above-mentioned patent application solves the problem of silicon core crystallization rate is slow, but due to even during drawing silicon core
The continuous unstability blown, can cause the silicon core crystallization rate newly drawn inconsistent, influence crystal mass.
【The content of the invention】
Through research, applicant thinks that the main cause for causing the silicon core crystallization rate newly drawn inconsistent is that blowning installation blows
Air flow method to silicon core is uneven, so as to cause the difference of silicon core crystallization rate.
The utility model provides a kind of blowning installation that silicon core crystallization rate is improved when being drawn for silicon core, by improving
The structure of blowning installation, makes finally to blow to the more uniform stabilization of gas of silicon core, so as to solve the silicon core crystallization newly drawn
The problem of velocity uniformity.
Principle of the present utility model includes two aspects：One is in the cooling procedure of silicon core, along different directions to every
Silicon core is blown, and the cooling of silicon core is more homogenized；Two be to entering blowning installation by the way of Multi-stage inlet pipe
Gas carries out repeatedly buffering reallocation, to realize the homogenization of gas distribution and flowing.
For achieving the above object, the utility model is adopted the following technical scheme that：
Set around each silicon core and open up multiple gas holes on a blowing nozzle, blowing nozzle, make what is blown out from gas hole
Gas uniformly blows to silicon core along multiple directions.
For steady air flow, one or more annular inlet passageways can be set in the upstream of blowing nozzle, pass through connecting tube
Blowing nozzle is connected with annular inlet passageway, is interconnected between annular inlet passageway by multiple air admission holes, makes to enter and blows
The air-flow of device of air is repeatedly distributed in inlet channel and air blowing ring, realizes the homogenization of blowout air-flow.
In a preferred embodiment, described inlet channel can be the circular passage of multiple parallel stackeds, cooling gas
Enter through air inlet pipe after blowning installation, enter the second inlet channel through the first inlet channel, then enter into the 3rd through connecting tube
Gas passage, finally blows to silicon core through gas hole.
Wherein, the first inlet channel and the second inlet channel are arranged in same air blowing ring, and the first inlet channel is set
In the top of the air blowing ring, the second inlet channel is arranged on the lower section of the air blowing ring, the first inlet channel and the second inlet channel
It is interconnected by multiple air admission holes.
Blowing nozzle is arranged on the lower section of the air blowing ring, and the 3rd inlet channel is located inside the blowing nozzle, passes through connecting tube
Second inlet channel is connected with the inlet channel of phase the 3rd, gas hole is arranged on blowing nozzle, be uniformly looped around around silicon core, it is right
The crystal region of eka-silicon core.
It is relative with the first inlet channel and the second inlet channel end in the opening A of air blowing ring annular for the ease of maintenance
The position answered is provided with sewage draining exit, provided with closure screw at sewage draining exit.
Several fixed columns are also provided with the air blowing ring, core is led for installing.
Due to using technical scheme as described above, the utility model has the advantages that：
Using the technical solution of the utility model, the problem of silicon core inhomogeneous cooling is even in the prior art is solved.Silicon core
Quick uniform cooling can improve the draw rate of crystal, increase the diameter of drawn silicon core, and the increasing of silicon core diameter, again
Accelerate the speed of growth of its later stage in reduction furnace, which thereby enhance production efficiency.
【Brief description of the drawings】
Fig. 1 is above-mentioned blowning installation of the prior art；
Fig. 2 is the dimensional structure diagram of the preferred embodiment of the utility model one；
Fig. 3 is the schematic diagram of Fig. 2 embodiment other directions；
Fig. 4 is the overlooking the structure diagram of Fig. 2 embodiments；
Fig. 5 is A-A cross section structure diagrams in Fig. 4 structures；
Fig. 6 is B-B cross section structure diagrams in Fig. 4 structures；
Fig. 7 is C-C cross section structure diagrams in Fig. 4 structures.
The corresponding relation between label and part in accompanying drawing 2-7 is：
1st, air inlet pipe；2nd, cover plate A；3rd, fixed column；4th, air blowing ring；5th, connecting tube；6th, blowing nozzle；7th, screw is blocked；8th, open
Mouth A；9th, cover plate B；10th, be open B；11st, gas hole；12nd, cover plate C；13rd, the first inlet channel；14th, the second inlet channel；15th, enter
Stomata；16th, the 3rd inlet channel.
【Embodiment】
As described above, central scope of the present utility model is to enter row buffering to gas by the way of Multi-stage inlet to disperse,
To realize the homogenization of gas；Every silicon core is blown along different directions simultaneously, the cooling of silicon core is more homogenized.
Below in conjunction with a preferred embodiment, the utility model is described in more detail.
Fig. 1 is the air blowing dress disclosed in the patent application of " device that silicon core crystallization rate is improved during a kind of drawing silicon core "
Put schematic diagram.The blowning installation includes air inlet pipe, air blowing ring and gas hole, and air-flow directly blows to silicon by air blowing ring through gas hole
Core.
A preferred embodiment of the utility model blowning installation is described in detail in accompanying drawing 2-7.
As shown in Fig. 2 blowning installation of the present utility model includes air inlet pipe 1, air blowing ring 4, connecting tube 5 and blowing nozzle 6.
As shown in figure 5, the first inlet channel 13 is provided with the top of the air blowing ring 4, in the lower section of air blowing ring 4 provided with the
Two inlet channels 14.First inlet channel 13 is connected with the second inlet channel 14 by air admission hole 15.
Air inlet pipe 1 is arranged on the outer edge surface of air blowing ring 4, the air inlet pipe inside one end connection furnace chamber of the air inlet pipe 1
Road, the other end connects the first inlet channel 13.
Several blowing nozzles 6 are provided with the lower section of air blowing ring 4, the blowing nozzle 6 connects the second air inlet by connecting tube 5 and led to
Road 14.On the quantity and position consistency of the drawing hole set on quantity, position and the high frequency coil of the blowing nozzle 6, blowing nozzle 6
Gas hole 11 to the crystal region of eka-silicon core.
As shown in figure 3, the blowing nozzle 6 is annular opening structure, i.e., provided with opening B10.Blowing nozzle 6 enters provided with the 3rd
Gas passage 16, is connected with the gas hole 11 being arranged on the inner edge surface of blowing nozzle 6.
The A8 that is open also is provided with air blowing ring 4.At the opening, the first inlet channel 13 and the two ends of the second inlet channel 14
Sewage draining exit is respectively equipped with corresponding position, provided with closure screw 7 at sewage draining exit.
As shown in Fig. 2 being provided with several fixed columns 3 above the air blowing ring 4, the fixed column 3 can be used for installation and lead
Core（Lead core and separately declare patent）.
As shown in figure 5, the first inlet channel 13 is is arranged on the top of air blowing ring 4, the upper groove to lower recess, on this
The openend of groove is provided with cover plate A2, upper groove and cover plate A2 the first inlet channels 13 of formation.First inlet channel 13 is annular
Opening（C-shaped）Structure, its two ends are respectively equipped with sewage draining exit.
Second inlet channel 14 is the lower section for being arranged on air blowing ring 4, the low groove being recessed upwards, in the opening of the low groove
End is provided with cover plate B9, low groove and cover plate B9 the second inlet channels 14 of formation.Second inlet channel 14 is annular opening（C-shaped）Knot
Structure, its two ends are respectively equipped with sewage draining exit.
As shown in fig. 6, in order that the second inlet channel 14 is connected with the first inlet channel 13, being provided with the bottom of low groove
Several air admission holes 15.
As shown in figure 5, during work, gas enters the first inlet channel 13 by air inlet pipe 1 first, and enters via air admission hole 15
Enter the second inlet channel 14.Gas phase is for the first inlet channel in peptizaiton through air admission hole 15, the second inlet channel 14
Gas in 13 is more uniformly distributed.
As illustrated in figs. 5-7, blowing nozzle 6 is also configured as C-shaped configuration, and the groove to lower recess is provided with the top of blowing nozzle 6,
The openend of the groove is provided with cover plate C12, and both constitute the 3rd inlet channel 16, and the 3rd inlet channel 16 passes through connecting tube 5
Connect the second inlet channel 14.Several gas holes 11 are provided with the inner edge surface of blowing nozzle 6, the air inlet of gas hole 11 and the 3rd is led to
Road 16 is connected, and the crystal region with silicon core is corresponding.
Gas in air blowing ring 4 can select any one in helium, neon, argon gas, Krypton, xenon or radon gas.
In the embodiment, the gas for cooling down silicon core enters after blowning installation through air inlet pipe 1, by the first air inlet
Passage 13 enters the second inlet channel 14, then the 3rd inlet channel 16 is entered back into through air admission hole 15, eventually through gas hole 11
Blow to silicon core.The gas for blowing to silicon core more uniformly, stably, ensures that the homogenization of silicon core crystallization.
, will by control system after the fuel rod upper end in body of heater melts by using exemplified by silicon core furnace drawing silicon core
The seed crystal driven by seedholder is inserted into the melting in liquid of fuel rod upper end slowly through the drawing hole on high frequency coil,
Melt after liquid combines together after termination and the fuel rod upper end of seed crystal, control to be driven by seedholder by control system
Seed crystal is slowly lifted, and gradually starts to crystallize and formed required silicon core after liquid leaves the drawing hole on high frequency coil when melting.Now
Air intake valve is opened by control system, argon gas is entered in the first inlet channel 13 on air blowing ring 4 by air inlet pipe 1, then
It is dispersed into by air admission hole 15 to the second inlet channel 14.Gas in second inlet channel 14 is entered by connecting tube 5
In 3rd inlet channel 16, then gas is blown to by gas hole 11 crystal region of silicon core, realize the quick cooling to crystal region.
By taking the silicon core for drawing a diameter of 10mm as an example, after blowning installation of the present utility model, the lifting speed of upper axle
" i.e. the draw rate of silicon core " is 14mm/min；A diameter of 14mm silicon core is drawn, the lifting speed of upper axle is 10mm/min.By
This substantially increases the draw rate of crystal.Because the crystallization rate of silicon core is accelerated, also increase silicon core draws diameter.
Claims (7)
1. a kind of blowning installation drawn for silicon core, including air inlet pipe（1）, blowing nozzle（6）And gas hole（11）, its feature exists
In：Around each silicon core, one blowing nozzle is set（6）, blowing nozzle（6）On open up multiple gas holes（11）, make from gas hole
（11）The gas of blowout uniformly blows to every silicon core along multiple directions.
2. blowning installation as claimed in claim 1, it is characterised in that：In the blowing nozzle（6）Upstream set one or many
Individual inlet channel, passes through connecting tube（5）By blowing nozzle（6）It is connected with inlet channel, leads between described multiple inlet channels
Cross multiple air admission holes（15）It is interconnected, makes the air-flow into blowning installation in described inlet channel and blowing nozzle（6）It is interior heavy
New distribution.
3. blowning installation as claimed in claim 2, it is characterised in that：Described inlet channel is the annular of multiple parallel stackeds
Passage, cooling gas is through air inlet pipe（1）After, by the first inlet channel（13）Into the second inlet channel（14）, then pass through
Connecting tube（5）Into the 3rd inlet channel（16）, after by gas hole（11）Blow to silicon core.
4. blowning installation as claimed in claim 3, it is characterised in that：First inlet channel（13）With the second inlet channel（14）
It is arranged at the air blowing ring of annular（4）It is interior, the first inlet channel（13）It is arranged on air blowing ring（4）Top, the second air inlet lead to
Road（14）It is arranged on air blowing ring（4）Lower section, pass through multiple air admission holes（15）It is interconnected.
5. blowning installation as claimed in claim 4, it is characterised in that：Several described blowing nozzles（6）It is arranged on air blowing ring
（4）Lower section, the 3rd inlet channel（16）Positioned at blowing nozzle（6）Inside, passes through connecting tube（5）By itself and the second inlet channel（14）
It is connected, gas hole（11）It is arranged on blowing nozzle（6）On, to the crystal region of eka-silicon core.
6. blowning installation as claimed in claim 4, it is characterised in that：Air blowing ring（4）With an opening A（8）, opening A（8）
With the first inlet channel（13）And second inlet channel（14）The corresponding position in end is provided with sewage draining exit, is provided with sewage draining exit
Block screw（7）.
7. blowning installation as claimed in claim 4, it is characterised in that：The air blowing ring（4）It is provided with several fixed columns
（3）, core is led for installing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720154782.3U CN206494987U (en) | 2017-02-21 | 2017-02-21 | A kind of blowning installation drawn for silicon core |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720154782.3U CN206494987U (en) | 2017-02-21 | 2017-02-21 | A kind of blowning installation drawn for silicon core |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206494987U true CN206494987U (en) | 2017-09-15 |
Family
ID=59805296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720154782.3U Withdrawn - After Issue CN206494987U (en) | 2017-02-21 | 2017-02-21 | A kind of blowning installation drawn for silicon core |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206494987U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106676625A (en) * | 2017-02-21 | 2017-05-17 | 洛阳金诺机械工程有限公司 | Blowing device for drawing silicon cores |
-
2017
- 2017-02-21 CN CN201720154782.3U patent/CN206494987U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106676625A (en) * | 2017-02-21 | 2017-05-17 | 洛阳金诺机械工程有限公司 | Blowing device for drawing silicon cores |
| CN106676625B (en) * | 2017-02-21 | 2023-05-26 | 洛阳金诺机械工程有限公司 | Air blowing device for drawing silicon core |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201222 Address after: D10, 4th floor, building 1, yinkun science and Technology Park, No.6 Fenghua Road, high tech Development Zone, Luoyang City, Henan Province Patentee after: LUOYANG AUTOMATION INSTITUTE Co.,Ltd. Address before: 471000 No.2, Jinxin Road, national high tech Development Zone, Luoyang City, Henan Province Patentee before: LUOYANG JINNUO MECHANICAL ENGINEERING Co.,Ltd. |
|
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20170915 Effective date of abandoning: 20230526 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20170915 Effective date of abandoning: 20230526 |