CN1113451C - 振荡器 - Google Patents
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- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/023—Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
- H03K3/0231—Astable circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
- H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
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- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
- H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/013—Modifications of generator to prevent operation by noise or interference
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/003—Circuit elements of oscillators
- H03B2200/004—Circuit elements of oscillators including a variable capacitance, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/006—Functional aspects of oscillators
- H03B2200/0098—Functional aspects of oscillators having a balanced output signal
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
- H03B2201/02—Varying the frequency of the oscillations by electronic means
- H03B2201/0208—Varying the frequency of the oscillations by electronic means the means being an element with a variable capacitance, e.g. capacitance diode
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2202/00—Aspects of oscillators relating to reduction of undesired oscillations
- H03B2202/08—Reduction of undesired oscillations originated from the oscillator in circuit elements external to the oscillator by means associated with the oscillator
- H03B2202/082—Reduction of undesired oscillations originated from the oscillator in circuit elements external to the oscillator by means associated with the oscillator by avoiding coupling between these circuit elements
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Abstract
一种振荡器,由一个谐振器(RES)通过耦合通路(COP)耦合至放大器(AMP)组成。为抑制由该耦合通路(COP)中的寄生谐振引起的不希望的振荡,该耦合通路(COP)中包括一个电阻(RS)。为进一步改善噪声表现,该耦合通路(COP)中可包括一个串联电容。该串联电容将有效地扩大该振荡器调谐的频率范围。
Description
技术领域
本发明涉及一种由谐振器耦合至放大器组成的振荡器。该振荡器可用于,例如,接收机,以提供VHF和/或UHF频带的混频载波。
背景技术
美国专利US-A5,434,544描述了一种包含了耦合至放大级的谐振器的振荡器。该文件声称实用的谐振器一般有不同的谐振频率,这是因为谐振器的元件有不希望有的电抗。例如,用于UHF电视调谐器配备有变容二极管的LC电路有三个谐振频率,其中的一个是所希望的,其他两个是寄生的。
为抑制不希望有的频率下的振荡,建议使用以下方式。放大级包括一个放大晶体管,其输出电流经过负载信号通路流入负载晶体管的发射极。该放大级由通过该信号通路传至负载晶体管的基极的无源电容性自举信号获得一个带通特性。因此,该振荡器在放大级的通带内振荡。通过将放大级的通带调节至接近希望的振荡频率而抑制不希望有的振荡。
发明内容
本发明的目的是提供一种上述类型的振荡器,它相对于现有技术在噪声方面有较好的性能。
根据本发明的一种振荡器,包括:一个谐振器;一个放大器,它包括由两个串联连接的集成电容形式组成的一个正反馈回路,该串联连接的集成电容两端有两个节点;和,一个耦合通路,它连接在该谐振器和所述集成放大器的所述节点间,所述耦合通路包括一个串联电阻。
根据本发明的一种接收机,包括用于将接收的信号变频为中频的变频器和为变频器提供混频载波的如上所述的振荡器。
本发明还包括根据上述振荡器的有益的扩展的功能。
本发明考虑以下几个方面。在任何实用的振荡器中,寄生电抗不仅存在于谐振器自身中,还存在于谐振器与放大器之间的耦合通路中。例如,如果放大器由集成电路实现,耦合通路将包括形成寄生电感的引线框和连接线。它还将包括连接线和封装板,它们形成寄生电容。在任一情况下,谐振器和放大器之间的耦合通路中的寄生电抗将引起寄生谐振。这种寄生谐振,以下称为寄生耦合通路谐振,可超过谐振器提供的所希望的谐振。进一步,该寄生耦合通路谐振的频率与希望的谐振较为接近,特别是,振荡器在较高的频率,例如,在1GHz级,工作时,和/或振荡器可调谐时。
在背景技术中,不希望有的振荡是由放大器的带通特性来抑制,该放大器放大所需的谐振而不放大寄生谐振。如果寄生耦合通路谐振超过希望的谐振,特别是,如果寄生耦合谐振的频率与希望的谐振较为接近时,带通特性需要相对陡。为使带通特性陡,放大器中由负载晶体管和无源电容自举信号传输器组成的正反馈回路需要有一个增益,增益值大约接近1的。但是,这种情况下,实际上处于正反馈环中的负载晶体管的噪声将被放大到相对较大的程度。结果,在背景技术中,对抗不希望有的振荡伴随有噪声性能上的损失。如果寄生通路谐振占优和,特别是,与所需要的谐振的频率相近,该损失可以特别严重。
根据本发明,谐振器与放大器之间的通路包含一个串联电阻。已经发现这种串联电阻抑制寄生通路谐振的程度明显大过对所需谐振的抑制。结果,放大器不再需要有相对明显的带通特性以抑制不希望的振荡。结果,如果放大器包含一个位于正反馈回路中用于实现带通特性的负载晶体管,则该回路不再需要有接近1值的增益。因此,与背景技术相比,负载晶体管中的噪声将被放大的很小。该通路中的串联电阻还很大程度上抑制了寄生通路谐振,以致放大器不再需要一个带通特性以抑制不希望的振荡。这种情况下,放大器不再需要包含在正反馈回路中的负载晶体管。取而代之的是,可以使用噪声较小的负载电路,例如,单个电阻。
在任何情况下,与背景技术相比,本发明使得振荡器中的放大器有更好的噪声特性。这将为振荡器的噪声特性带来益处,相对于通路中的串联电阻本身是一个噪声源这一缺点,益处还是更多的。已经发现,在许多应用中,带来的益处远远超过其缺点。因此,与背景技术相比,本发明使振荡器在噪声特性方面由较好的表现。
以下是本发明的另一个优点。振荡器的特性还取决于振荡回路的增益,该回路由放大器和谐振器组成。如果振荡回路增益太小,振荡器可能不振荡。如果振荡回路增益太大,放大器中的晶体管可能饱和,这将对振荡信号产生不利影响。实际应用中,如果谐振器是可调谐的,振荡回路增益将可变化,结果,特性将不稳定。已经发现,在许多应用中,谐振器与放大器之间的通路中的串联电阻有效地减小由于调谐所带来的振荡回路增益的变化。结果,本发明使得振荡器在所希望的调谐范围内使振荡器的调谐非常稳定。
本发明可全部或部分由集成电路实现。例如,集成电路可包含振荡器的放大器,该放大器有一个正反馈通路。振荡器的谐振器可在集成电路的外部并联接至该正反馈电路。这种实现方式的优点在于它节省成本,这是因为该集成电路有较少的管脚和联接谐振器和放大器的外部部件。请注意,这种节省成本的实现方式中,如果不采用本发明中的谐振器与放大器间的通路中的串联电阻,将存在产生不希望的振荡的潜在风险。因此,本发明可采用既可靠又节约成本的集成电路。
本发明可应用于包含变频器的接收机中,该变频器用于将接收到的信号转变为中频。这将需要一个振荡器,为变频器提供变频载波。由于本发明可由既可靠又节约成本的集成电路实现,使得接收机成本较低。进一步,由于本发明使振荡器有较好的噪声特性,使得接收机的接收质量较好。以上的优点使本发明特别适合用于数字接收机,例如,数字图象广播(DVB)接收机。
附图说明
以下将结合附图说明本发明和其他可选择的技术特征:
图1是说明本发明基本特征的框图;
图2是图1所示的振荡器的附加技术特征的框图;
图3是根据本发明的振荡器的电路图;和
图4a和4b是说明图3的振荡器的串联电阻的作用的图表。
具体实施方式
首先,对参考标记作一些说明。在所有附图中,同种部件使用相同字母标记标识。一幅图中可能有多个同种部件。这种情况下,用字母后加数字来区别同种的部件。同种部件的个数为运行参数时,该数字放入括号中。适当的情况下,说明书和权利要求书中的一些参考符号的数字将被省略。
图1用实线示出本法明的基本特征。一个振荡器OSC由一个谐振器RES通过耦合通路COP耦合至一个放大器AMP组成。该耦合通路包括一个电阻并联RS。
图1还将以下用虚线示出。该振荡器组成接收器REC的一个部件。它为变频器MIX提供混频载波Smix,将接收的信号Srf变频为中波IF。
图2示出以下附加特征。谐振器RES和放大器AMP之间的耦合通路COP还包括一个串联电容CS。图2的特征基于以下考虑。振荡器的噪声特性依赖于耦合至放大器AMP的谐振器RES的相频特性。相频特性越陡接近所需要的谐振,噪声特性越好。串联电容CS有效地增加了相频特性的陡度。结果,串联电容CS帮助进一步改善噪声性能。
图2的特征的另一个优点如下。可要求该振荡器是可调谐的。实际应用中,可调谐振荡器由带有由例如调谐控制电压的方法调谐的可变电抗的电元件的谐振器实现。振荡器的调谐范围不仅由电元件的的调谐范围决定,还由振荡器的结构和其中的其他元件的特性决定。如图2所示,如果在谐振器RES和放大器AMP之间的耦合通路中加入串联电容CS,调谐范围将比未加入电容时的宽。因此,图2的特征使得振荡器在较宽范围内可调。
图3示出包括如上所述的图1和图2的特征的本法明的一个例子。图3中的振荡器中,放大器AMP组成集成电路IC的一部分并包括一个集成电容C1-C4形式的正反馈通路。它还包括三个集成晶体管Ti1-Ti3,两个集成电阻Ri1-Ri2和为集成晶体管Ti1-Ti3提供偏压的的集成偏压电路BIAS。谐振器RES由两个线圈L1和L2,两个电容C1和C2,一个电阻R1,和可调电压Vtun施于其上的可变电抗器VAR组成。谐振器RES通过耦合通路COP耦合至放大器AMP的节点N1和N2上。
图3中的振荡器中,耦合通路COP包括一对串联电阻RS1和RS2,一对串联电容CS1和CS2。它还包括一些寄生电容Cpar和寄生电感Lpar。寄生电容Cpar1可以由例如印刷电路板上的两条线路间的电容得到。寄生电容Cpar2可由例如组成耦合通路COP一部分的集成电路IC的两个连接管脚P1,P2间的电容得到。寄生电感Lpar1,Lpar2可由例如集成电路IC的引线框形成和寄生电感Lpar3,Lpar4由连接线形成。
图3的振荡器的运行方式解释如下。谐振器RES和耦合通路COP在节点N1和N2之间形成阻抗。放大器AMP也在该节点间形成阻抗。上述两个阻抗都可视为电阻和电抗间的并联。在满足以下两个条件后,振荡器可在一定频率下振荡。第一,两个阻抗的电抗必须极性相反和数值相同。第二,谐振器RES和耦合通路COP组成的电阻,以下称为振荡回路电阻(tank resistance),必须有大于放大器AMP形成的电阻的绝对值的值。该振荡回路电阻有负极性和有效地避免抑制谐振器RES。因此,以下将称为非抑制电阻。应注意,图3的振荡器中,非抑制电阻的阻值基本上与频率无关,这与US-A5,434,544中描述的振荡器不同。后一个振荡器有一个放大器,该放大器提供一个阻值与频率有关的非抑制电阻。
图3的振荡器的电视机的应用中,串联电阻RS1和RS2在10欧姆级可到达最佳效果。例如,图3的振荡器应用于VHF-A,VHF-B和UHF频带的调谐,串联电阻RS1和RS2分别为47,27和15欧姆。串联电容CS1和CS2最好是微微法级。采用这些数值,UHF频带的调谐可扩大至从最大值接近900MHz,如不使用串联电容,至接近1070MHz。进一步,由于串联电容CS1和CS2也有效地加宽了VHF-A和VHF-B带宽中的调谐范围,谐振器RES的实现就不再至关重要了。即,谐振器RES的元件不必满足元件分布的非常严格的要求以便在整个VHF-A和VHF-B带宽中调谐。进一步,在上述任一带宽中,串联电容CS1和CS2在噪声方面都有改进。
图4a和4b示出谐振器RES和放大器AMP之间的耦合通路COP中的串联电阻RS1和RS2的效果。两幅图都示出了节点N1和N2间的振荡回路电阻(Rtank)作为谐振器RES的不同调谐状态的频率(F)的函数。当串联电阻RS为零值时,即没有串联电阻,得到图4a和当串联电阻RS为5欧姆时得到图4b。两幅图中,有希望的谐振频率位于其中的一个频率频率FRwant和寄生谐振位于其中的两个频率范围FRpar1和FRpar2。应注意,谐振器RES为图3的振荡器的UHF电视机应用而设计。
图4a中,频率范围FRpar2中的寄生谐振频率时的振荡回路电阻高于频率范围FRwant中的希望频率时的振荡回路电阻。为了满足希望的谐振频率的振荡条件,放大器AMP形成的非抑制电阻必须有小于振荡回路电阻的绝对值。但是,这种情况下,非抑制电阻的绝对值将必定小于寄生谐振频率时的振荡回路电阻。结果,振荡器OSC有在寄生谐振频率而不是希望的谐振频率下振荡的危险。
图4b中,频率范围FRwant中的希望的谐振频率时的振荡回路电阻总高于频率范围FRpar1和FRpar2中的谐振频率时的振荡回路电阻。放大器AMP可按以下方式制造,使得非抑制电阻的绝对值小于希望谐振频率下的振荡回路电阻而大于寄生谐振频率时的振荡回路电阻。此时,只有在希望的谐振的频率下才满足振荡条件。但是,即使非抑制电阻的绝对值小于寄生谐振频率时的振荡回路电阻,振荡器也将在希望的谐振频率下振荡,因为在此频率下振荡回路电阻较高。
附图和以上说明是为了说明而不是限制本法明。可以有多个本法明的权利要求范围内的改变。对于这方面,有以下说明。
存在不同单元的功能和功能性元件的多个物理分布。这方面,附图是示意性的,每一个只表示本法明的一个可能的实施例。
括号中的标号不能现为权利要求的限制。
Claims (3)
1.一种振荡器(OSC),包括:
一个谐振器(RES);
一个放大器(AMP),它包括由两个串联连接的集成电容(Ci1,Ci2;Ci3,Ci4)形式组成的一个正反馈回路,该串联连接的集成电容(Ci1,Ci2;Ci3,Ci4)两端有两个节点(N1;N2);和
一个耦合通路(COP),它连接在该谐振器(RES)和所述集成放大器(AMP)的所述节点(N1;N2)间,所述耦合通路(COP)包括一个串联电阻(RS1;RS2)。
2.如权利要求1所述的振荡器(OSC),其特征在于,所述耦合通路(COP)还包括一个串联电容(CS1;CS2)。
3.一种接收机,包括用于将接收的信号(Srf)变频为中频(IF)的变频器(MIX)和为变频器(MIX)提供混频载波(Smix)的如权利要求1所述的振荡器(OSC)。
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Application Number | Priority Date | Filing Date | Title |
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EP97203021 | 1997-09-30 | ||
EP97203021.7 | 1997-09-30 |
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CN1244312A CN1244312A (zh) | 2000-02-09 |
CN1113451C true CN1113451C (zh) | 2003-07-02 |
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CN98802019A Expired - Fee Related CN1113451C (zh) | 1997-09-30 | 1998-08-19 | 振荡器 |
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US (1) | US6097258A (zh) |
EP (1) | EP0941574B1 (zh) |
JP (1) | JP2001508985A (zh) |
KR (1) | KR20000069168A (zh) |
CN (1) | CN1113451C (zh) |
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WO (1) | WO1999017438A1 (zh) |
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MXPA02001187A (es) * | 1999-08-02 | 2002-08-20 | Qualcomm Inc | Metodo y aparato para oscilador de banda multiple controlado por voltaje con inmunidad al ruido. |
DE10137091A1 (de) * | 2001-07-30 | 2003-02-13 | Sick Ag | Induktiver Näherungssensor |
JP2003124743A (ja) * | 2001-10-16 | 2003-04-25 | Oki Electric Ind Co Ltd | 電圧制御発振回路 |
JP4365575B2 (ja) * | 2002-11-20 | 2009-11-18 | アルプス電気株式会社 | テレビジョンチューナの発振回路 |
DE102006023353A1 (de) * | 2006-05-17 | 2007-11-22 | Atmel Duisburg Gmbh | Integrierter Schwingkreis |
US7656235B2 (en) | 2006-06-29 | 2010-02-02 | Mediatek Inc. | Communication system and oscillation signal provision method |
DE102007024532B4 (de) * | 2006-06-29 | 2015-10-15 | Mediatek Inc. | Kommunikationssystem und Verfahren zur Bereitstellung eines Oszillationssignals |
ITMI20090125A1 (it) * | 2009-02-03 | 2010-08-04 | Milano Politecnico | Oscillatore elettronico con ridotto rumore di fase |
CN105897296A (zh) * | 2015-01-26 | 2016-08-24 | 泉州市铁通电子设备有限公司 | 一种矿山超低频双向通信设备 |
JP6517966B2 (ja) * | 2018-02-22 | 2019-05-22 | ラピスセミコンダクタ株式会社 | 発振回路 |
US11018625B1 (en) | 2020-02-28 | 2021-05-25 | Nxp B.V. | Frequency reference generator |
US10903790B1 (en) * | 2020-05-28 | 2021-01-26 | Nxp B.V. | Frequency reference generator |
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US4350971A (en) * | 1979-09-13 | 1982-09-21 | Lucas Industries Limited | Circuit for use in the detection of the condition of an isolated switch contact |
GB2228154B (en) * | 1989-02-09 | 1993-04-21 | Plessey Co Plc | On-chip integrated oscillator circuits |
FR2671242B1 (fr) * | 1990-12-27 | 1995-09-01 | Thomson Csf | Oscillateur a tres faible bruit de phase. |
BE1007477A3 (nl) * | 1993-09-06 | 1995-07-11 | Philips Electronics Nv | Oscillator. |
-
1998
- 1998-08-19 DE DE69820586T patent/DE69820586T2/de not_active Expired - Fee Related
- 1998-08-19 CN CN98802019A patent/CN1113451C/zh not_active Expired - Fee Related
- 1998-08-19 WO PCT/IB1998/001269 patent/WO1999017438A1/en not_active Application Discontinuation
- 1998-08-19 JP JP51987799A patent/JP2001508985A/ja active Pending
- 1998-08-19 EP EP98936622A patent/EP0941574B1/en not_active Expired - Lifetime
- 1998-08-19 KR KR1019997004715A patent/KR20000069168A/ko not_active Application Discontinuation
- 1998-09-24 US US09/159,989 patent/US6097258A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
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CN1244312A (zh) | 2000-02-09 |
DE69820586D1 (de) | 2004-01-29 |
JP2001508985A (ja) | 2001-07-03 |
EP0941574B1 (en) | 2003-12-17 |
US6097258A (en) | 2000-08-01 |
WO1999017438A1 (en) | 1999-04-08 |
KR20000069168A (ko) | 2000-11-25 |
EP0941574A1 (en) | 1999-09-15 |
DE69820586T2 (de) | 2004-09-16 |
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