CN111344840B - 半导体装置以及半导体装置的制造方法 - Google Patents

半导体装置以及半导体装置的制造方法 Download PDF

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CN111344840B
CN111344840B CN201880072262.5A CN201880072262A CN111344840B CN 111344840 B CN111344840 B CN 111344840B CN 201880072262 A CN201880072262 A CN 201880072262A CN 111344840 B CN111344840 B CN 111344840B
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film
semiconductor device
cold spray
metal
main electrode
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CN111344840A (zh
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柳本辰则
佐藤香织
菊池正雄
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

本发明涉及半导体装置，具备：第1主电极及第2主电极，分别配设于半导体基板的第1主面上及第2主面上；保护膜，配设于所述第1主电极的端缘部上；以及第1金属膜，配设于所述第1主电极上的由所述保护膜包围的区域，在所述第1金属膜中，中心部分的膜厚比与所述保护膜相接的部分的膜厚更厚，并且在表面具有凹凸。

Description

半导体装置以及半导体装置的制造方法
技术领域
本发明涉及半导体装置，特别涉及IGBT(Insulated Gate Bipolar Transistor，绝缘栅双极晶体管)、MOSFET(Metal Oxide Semiconductor Field Effect Transistor，金属氧化物半导体场效应晶体管)等半导体装置。
背景技术
在逆变器、转换器等构成电力变换器的电力用半导体装置中，具有包括IGBT以及MOSFET等开关器件、和与该开关器件逆并联地连接的续流二极管的结构的例子较多，一般将以硅(Si)半导体为材料的IGBT用作开关器件，将pin二极管用作续流二极管。近年来，正在开发使用作为带隙比Si半导体宽的宽带隙半导体的碳化硅(SiC)的电力用半导体装置。SiC由于绝缘破坏强度高到Si的约10倍且能够将漂移层的厚度降低到Si的约1/10，所以能够实现低导通电压，并且即便在高温下也能够动作，所以以SiC为半导体材料的电力用半导体装置相比于以往的以Si为半导体材料的电力用半导体装置，能够实现小型化以及高效化。
在将主电流在半导体装置的厚度方向上流过的表背导通型的半导体装置、例如IGBT、MOSFET以及二极管等电力变换用的半导体装置安装到陶瓷基板的情况下，半导体装置的背面电极与陶瓷基板的金属图案进行钎焊，半导体装置的表面电极通过利用导线键合的接线以及利用与金属端子的钎焊的接线，形成通电路径。然而，在半导体装置模块(以下称为模块)中所占的半导体装置所占的成本大，为了模块的小型化以及低成本化，对各半导体装置通电的电流密度以及在布线中流过的电流密度存在上升的倾向。由于电流密度上升，因此在半导体装置动作时从半导体装置发出的热量增加到以往以上，半导体装置温度以及布线温度上升。
在以往的对铝(Al)合金的表面电极接合Al导线的布线中，存在由于电流密度的上升以及温度的上升而接合部的寿命降低的可能性。因此，正在开发应用基于电传导性比Al导线高的铜(Cu)导线的布线的模块、以及将Cu的板材钎焊到半导体装置的表面电极的模块。
在这些模块的半导体装置的表面电极中，为了提高与Cu导线的接合性而形成Cu电极，或者为了提高焊料的密接性而形成在镍(Ni)镀敷上实施金(Au)镀敷的电极。
例如，在专利文献1中，公开在半导体装置的表面电极以及背面电极中使用湿式镀敷来形成金属膜的半导体装置。
然而，利用湿式镀敷的成膜由于成膜速度慢并且膜的成品率差，所以时间以及成本增加。因此，如专利文献2公开的利用成膜速度快的冷喷涂法的成膜方法受到关注。
现有技术文献
专利文献
专利文献1：日本特开2007-19412号公报
专利文献2：日本特开2012-49469号公报
发明内容
在专利文献2公开的技术中，将利用控制了粒径的粉体的冷喷涂实施2次来成膜，所以生产性低且非高效，无法削减成膜时间以及成膜成本。另外，在用这样的制造方法制造的半导体装置中，通过冷喷涂法成膜的膜的致密度低，在膜内发生大量的缺陷，想要在该膜上通过键合(bonding)接合Cu导线时，在键合时施加载荷时膜会变形，存在得不到充分的接合性这样的课题。
本发明是为了解决如上述的问题而完成的，其目的在于提供一种提高半导体装置的主电极中的导线接合部的接合的可靠性的半导体装置。
本发明的半导体装置具备：第1主电极及第2主电极，分别配设于半导体基板的第1主面上及第2主面上；保护膜，配设于所述第1主电极的端缘部上；以及第1金属膜，配设于所述第1主电极上的由所述保护膜包围的区域，所述第1金属膜是冷喷涂膜，中心部分的膜厚比与所述保护膜相接的部分的膜厚更厚，并且在表面具有凹凸。
根据本发明所涉及的半导体装置，第1金属膜在第1金属膜的中心部分的膜厚和与保护膜相接的部分的膜厚中具有差，并且在第1金属膜的表面存在凹凸。因此，由于对第1主电极键合例如Cu导线时的载荷，凸部先变形，由于键合载荷引起的向半导体装置的损害被吸收，并且Cu导线陷入到凹部，从而接合的比表面积增加，Cu导线的键合的接合质量提高，导线接合部的接合的可靠性提高。另外，第1金属膜的膜厚具有厚度分布，并且在其表面具有凹凸，所以第1金属膜的表面积宽，在将本发明所涉及的半导体装置嵌入到模块的情况下，密封树脂不易剥离。
附图说明
图1是安装有本发明所涉及的实施方式1的半导体装置的半导体装置模块的剖面图。
图2是安装有本发明所涉及的实施方式1的半导体装置的半导体装置模块的俯视图。
图3是本发明所涉及的实施方式1的半导体装置的俯视图。
图4是本发明所涉及的实施方式1的半导体装置的剖面图。
图5是说明本发明所涉及的实施方式1的半导体装置的制造工序的剖面图。
图6是形成有保护膜的阶段的半导体晶片的俯视图。
图7是示出在保护膜上重叠掩模的状态的俯视图。
图8是说明本发明所涉及的实施方式1的半导体装置的制造工序的剖面图。
图9是说明本发明所涉及的实施方式1的半导体装置的制造工序的剖面图。
图10是说明本发明所涉及的实施方式2的半导体装置的制造工序的剖面图。
图11是说明本发明所涉及的实施方式2的半导体装置的制造工序的剖面图。
图12是本发明所涉及的实施方式2的半导体装置的剖面图。
图13是本发明所涉及的实施方式2的变形例的半导体装置的剖面图。
图14是示意地示出冷喷涂膜的表面状态的图。
图15是安装有本发明所涉及的实施方式3的半导体装置的半导体装置模块的剖面图。
图16是安装有本发明所涉及的实施方式3的半导体装置的半导体装置模块的俯视图。
图17是安装有本发明所涉及的实施方式3的半导体装置的半导体装置模块的部分剖面图。
图18是示意地示出冷喷涂膜的表面状态的图。
具体实施方式
<实施方式1>
<装置结构>
图1是安装有本发明所涉及的实施方式1的半导体装置的半导体装置模块(以下称为模块)100的剖面图。另外，图2是从上方观察模块100的部分俯视图，省略了关闭开口部的罩以及密封树脂等。此外，图2中的A-B-A线中的箭头所示方向的剖面是图1的剖面。
如图1所示，在模块100中，在基体板101的上表面，利用焊料(基板下焊料)107b接合绝缘基板103，在绝缘基板103的上表面，利用焊料(芯片下焊料)107a接合包括开关器件104a以及续流二极管104b的半导体装置104。基体板101收纳于上表面侧以及底面侧成为开口部的壳体102的底面侧的开口部，与底面侧的开口部相同的形状以及相同的面积的基体板101构成壳体102的底面。
在壳体102内收纳的基体板101处，利用布线106，对半导体装置104和在壳体102内设置的多个端子108进行接线。布线106包括主布线106a以及栅极布线106b。
在壳体102内收纳基体板101，壳体102和基体板101用树脂材料等接合，从而成为有底无盖的壳体102，通过从壳体102的上表面侧的开口部导入树脂等密封材料105，用密封材料105覆盖基体板101、绝缘基板103、半导体装置104、布线106以及端子108。
在此，在基体板101中，能够使用作为复合材料的AlSiC板以及Cu板，但在使用半导体装置104时，如果具有充分的绝缘性能和强度，则也可以不设置基体板101，而用绝缘基板103构成壳体102的底面。即，也可以成为在绝缘基板103的下表面，设置有下侧导体图案103e，下侧导体图案103e作为壳体102的底面露出的结构。
壳体102包括聚苯硫醚树脂(PPS)、聚对苯二甲酸丁二醇酯树脂(PBT)或者聚对苯二甲酸乙二醇酯树脂(PET)。
绝缘基板103在绝缘材料103d的上表面设置有上侧导体图案103a、103b以及103c，在下表面设置有下侧导体图案103e，绝缘材料103d也可以包括Al2O3、AlN以及Si3N4等陶瓷材料，或者在环氧材料或者液晶聚合物等粘合剂材料中混入二氧化硅、氧化铝以及BN(氮化硼)等填料而成的有机绝缘材料。
另外，上侧导体图案103a、103b、103c以及下侧导体图案103e虽然也可以包括Cu材料，但还可以对Cu材料实施Ni镀敷或者银(Ag)镀敷，另外还可以对Al材料实施Ni镀敷或者Ag镀敷。
在半导体装置104中，作为开关器件104a使用SiC-MOSFET，作为续流二极管104b使用SiC-SBD(Shottky Barrier Diode，肖特基势垒二极管)。也可以将包括Si半导体的Si-IGBT作为开关器件104a，将Si-FWD(Free Wheeling Diode，续流二极管)作为续流二极管104b。
开关器件104a以及续流二极管104b利用作为以锡(Sn)为基材的焊料材料的芯片下焊料107a与绝缘基板103的上侧导体图案103a(与漏电极电连接)接合，但也可以利用Ag烧结材料与上侧导体图案103a接合。
密封材料105使用混入填料的环氧材料，但在模块100的使用时具有充分的绝缘性即可，也可以使用硅凝胶。
在半导体装置104(开关器件104a以及续流二极管104b)的上表面电极109的最表面，形成通过冷喷涂法形成的冷喷涂膜(未图示)，在本实施方式1中，形成Cu粉体的冷喷涂膜。
另外，半导体装置104上部的主布线106a是Cu导线，使用键合导线，通过楔形键合(wedge bonding)，对开关器件104a的上表面电极109、续流二极管104b的上表面电极109、以及与源电极电连接的上侧导体图案103b进行接线。通过使用键合导线，接线的自由度变高。此外，作为布线材料，有导电性即可，也可以是例如Al导线。另外，也可以并非导线形状而是板材(未图示)，其接合也可以并非楔形键合，而利用焊料或者含有Ag的粘接剂或者Ag烧结材料，对半导体装置104的上表面电极109和板材进行接合。
通过在Cu的冷喷涂膜上利用楔形键合接合Cu导线，相比于以往的基于Al合金电极与Al导线的通过楔形键合的接合，不仅接合部的接合可靠性大幅提高，而且相对Al的电气电阻率是2.82×10-8Ωm，Cu的电气电阻率是1.68×10-8Ωm，在同一线径中流过电流的情况下，相比于Al布线，能够将发热抑制得较低。此外，Cu导线的线径例如设为150μm～600μm程度。
在开关器件104a的上表面，设置有未图示的栅极焊盘，栅极焊盘和上侧导体图案103c(与栅电极电连接)通过栅极布线106b被接线，上侧导体图案103c和端子108通过栅极布线106b被接线。栅极布线106b也是Cu导线，而相比于以往的Al导线，得到接合部的大幅的接合可靠性。Cu由于其强度大于Al，所以组装时的导线的变形也不易发生，流过的电流也比主布线106a少，所以也可以比主布线106a的线形细。在该情况下，线径例如设为50μm～200μm程度。
根据同样的理由，与在模块100内设置的温度探测用的二极管(未图示)的阴电极以及阳电极连接的布线也可以与栅极布线106b同样地其线形比主布线106a更细。
图3是从上表面侧观察开关器件104a的俯视图，图4是图3中的C-C线处的箭头所示方向的剖面图。
如图4所示，开关器件104a具备半导体基板201、设置于半导体基板201的第1主面201a上的Al合金电极202、设置于Al合金电极202上的冷喷涂膜208(第1冷喷涂膜)、设置于半导体基板201的第2主面201b上的阻挡金属(barrier metal)204、设置于阻挡金属204上的Ni电极205、以及设置于Ni电极205上的Au电极206。此外，冷喷涂膜208还有时称为第1金属膜。
半导体基板201是SiC基板或者Si基板，在其表面内设置有省略图示的扩散层，作为掌控MOSFET或者IGBT的动作的活性层发挥功能。
在Al合金电极202上，以包围冷喷涂膜208的方式，设置有保护膜203。此外，如图3所示，保护膜203还以包围设置于栅极焊盘GP的冷喷涂膜208的方式设置。
另外，Al合金电极202与省略图示的半导体基板201的表面内的扩散层一起构成第1主电极210，阻挡金属204、Ni电极205以及Au电极206与省略图示的半导体基板201的表面内的扩散层一起构成第2主电极220。
Al合金电极202是与半导体基板201的表面内的扩散层进行电气导通的电极，一般利用纯Al、AlSi合金、AlCu合金以及AlSiCu合金，合金中的Si、Cu的混合比例以合金中的重量比是5wt％以下。
阻挡金属204是防止阻碍器件动作的元素从外部侵入的膜，一般利用钛(Ti)、钼(Mo)、钨(W)、钒(V)、铬(Cr)以及Al等金属膜、或者它们的氧化物以及氮化物。
Ni电极205与阻挡金属204直接接合，在钎焊时与焊料反应而形成合金层以及金属间化合物。Au电极206是为了在测定半导体装置的特性时消除接触电阻的影响、进而防止Ni的氧化来提高焊料的密接性而设置的。
保护膜203是为了半导体装置表面的物理性的保护和绝缘距离的增加而设置的，使用作为有机物的聚酰亚胺，但也可以使用作为无机物的SiO2或者SiN。
冷喷涂膜208在Al合金电极202上成膜，通过从冷喷涂装置排出的金属粉体具有的热能和动能由于碰撞到作为被接合面的Al合金电极202而产生的摩擦热(能量)，在金属粉体以及Al合金电极202各自的最表面产生变形而相互缠绕。另外，各个最表面的金属氧化膜被去除，通过在金属粉体和Al合金电极202的界面处产生的反应形成的膜上，从冷喷涂装置连续地排出金属粉体，连续地碰撞到先前形成的冷喷涂膜上，从而膜厚增加，最终地成为冷喷涂膜208。
此外，如以下所述控制对冷喷涂装置供给的金属粉体的粒径。即，是通过了JIS(日本工业标准)的试验用筛网的网孔为100μm(149网格)的筛网的粒子，其制法是通过电解法生成的Cu粉体，其形状接近树枝(树枝状晶体)形状。此外，粒子的制法也可以使用高压旋转水雾化法，在该情况下，形状成为接近球形状的形状。另外，在粒子的制法中，也可以使用水雾化法。Cu粉体无论是接近树枝状晶体形状的形状还是接近球形状的形状，通过碰撞到被接合面而成为不保留原型的薄的扁平状。
通过了网孔为100μm的筛网的粒子虽然具有粒径100μm以下的粒径分布，但最好为通过利用激光衍射法解析衍射散射图案来进行测定，并在将横轴设为粒径并将纵轴设为频度(个数)的情况下的粒径分布测定结果中，频度(个数)成为最大的粒径是20μm程度。即，最好具有如下分布：粒径为20μm程度的粒子形成分布的峰值，以形成该峰值的粒子为中心，存在粒径比其小的粒子以及粒径比其大的粒子。如后说明，根据得到粒子间隔致密的冷喷涂膜这样的观点，最好粒径为20μm以下的粒子尽可能多，最好控制粒子的制造条件以得到这样的分布的金属粉体。此外，形成峰值的粒子不限定于20μm的粒径，包含相对粒径20μm加减10％程度的范围的粒径。
通过设为这样的粒径分布，能够使冷喷涂膜208成为如下膜构造：越是靠Al合金电极202侧，粉体粒子间隔越致密，随着远离Al合金电极202，粉体粒子间隔变大，随着接近最表面，粉体粒子间隔再次变得致密。在后面对其进一步进行说明。
此外，筛网的网孔也可以小于100μm，例如，在使用网孔为53μm(270网格)的筛网的情况下，得到粒径为53μm以下的粒子，但其收获率低，为了更廉价地形成冷喷涂膜，筛网的网孔最好为100μm程度。
因此，在形成冷喷涂膜的情况下，例如使用粒径100μm以下的金属粉体即可，更优选地使用粒径60μm以下的金属粉体即可。其原因为，粒径大的粒子、例如大于60μm的粒子在从后述冷喷涂装置的喷嘴排出时得不到为了形成冷喷涂膜而充分的动能，即使碰撞到先前形成的冷喷涂膜，也不会产生粒子彼此的接合，由于排出气体的流动而弹向膜外，不对成膜作出贡献。因此，为了形成均匀的膜，粒径优选为60μm以下。此外，下限的粒径最好大于例如1.0μm，但无需为了控制下限的粒径而利用筛网挑选。另外，根据以下说明的理由，无需使金属粉体的粒径变得均匀，无需为了均匀而利用筛网挑选。
即，施加到具有预定的网孔的筛网的金属粉体具有该网孔以下的粒径分布。在使用这样的金属粉体通过冷喷涂进行成膜时，从重量轻的更微细的粒子起优先地开始碰撞到Al合金电极202，而形成冷喷涂膜，之后，重量更重且粒径更大的粒子碰撞到先前形成的冷喷涂膜，所以用Al合金电极202保护的半导体装置不会被破坏。进而，从更微细的粒子起碰撞到Al合金电极202而形成冷喷涂膜，所以成为越是靠被接合面、即Al合金电极202的表面侧，包括粒径越小的粒子的致密的冷喷涂膜。在该致密的冷喷涂膜上，以上述网孔以下的粒径分布，金属粉体依次碰撞，所以形成从粉体粒子间隔最致密的膜向更粗的膜这样膜质不同的冷喷涂膜。此外，在粒径大的粒子之间，粒径更小的粒子碰撞，从而形成粉体粒子间隔比较致密的膜，所以冷喷涂膜的上层也成为比较致密的膜。其结果，冷喷涂膜208具有如下膜构造：越是靠Al合金电极202侧，粉体粒子间隔越致密，随着远离Al合金电极202，粉体粒子间隔变大，随着接近最表面，粉体粒子间隔再次变得致密。
在此，图18示意地示出冷喷涂膜208的膜构造。如图18所示，冷喷涂膜208成为Al合金电极202表面侧附近的由微细的粒子形成的冷喷涂膜241、在冷喷涂膜241的上部由粒径大的粒子形成的冷喷涂膜242、以及在冷喷涂膜242的上部由粒径大的粒子和微细的粒子形成的冷喷涂膜243的多层构造。
根据图18可知，冷喷涂膜208的膜厚方向上的中央部的空隙(粒子间的隙间)的数量(密度)比接近Al合金电极202的区域中的空隙的数量(密度)多，并且比最表面附近的空隙的数量(密度)多。在此，在冷喷涂膜208的膜厚是例如60μm的情况下，冷喷涂膜208的膜厚方向上的最表面附近是指从最表面起15～20μm的区域，接近Al合金电极202的区域是指从Al合金电极202起6～13μm的区域，中央部是指上述2个区域之间且厚度27～39μm的区域。
此外，在图18中，为便于说明，用球形成为扁平状态的形状表示粒子，并且将粒径表示得较大，与保护膜203的比例等不正确。实际的冷喷涂膜208的最表面并非由扁平的粒子形成凸凹，而成为微小的凹凸连续的状态。
通过采用这样的膜构造，Al合金电极202和冷喷涂膜208的接合性提高，并且冷喷涂膜208和Cu导线的接合性也提高。
另外，粒径大的粒子在从后述冷喷涂装置的喷嘴排出时，得不到为了形成冷喷涂膜而充分的动能，即使碰撞到先前形成的冷喷涂膜，粒子彼此也不会接合，由于排出气体的流动被弹到膜外。
在此，Al合金电极202的厚度是5μm，但能够针对冷喷涂膜的成膜防止向半导体装置的损害即可，因此既可以比5μm薄，也可以相反地比5μm厚。另外，在Al合金电极202上，既可以通过湿式的镀敷法形成Ni镀敷膜，也可以通过真空蒸镀形成Ni溅射膜。
在本实施方式中，作为对冷喷涂装置供给的金属粉体，使用Cu粉体，但为能够与被接合面形成金属接合的金属即可，也可以是Cu合金粉体、Al粉体、Ni粉体、Sn粉体，还可以是将它们混合而成的粉体。此外，冷喷涂膜208的厚度能够通过喷射的照射时间、照射速度(气体压力)以及照射温度控制，在本实施方式1中，具有在对Cu导线进行键合时，能够保护冷喷涂膜208下的装置构造的充分的厚度即可，将30μm作为一个例子，但如果能够保护在利用Cu导线的键合中的半导体装置的损害，则具有10μm程度的厚度就充分。
另外，在冷喷涂膜208变得过厚时，形成半导体装置的半导体晶片翘曲、破裂，所以最好为100μm以下。另外，成膜的冷喷涂膜208的最表面不平滑且不均匀，产生有凹凸。例如，在通过湿式的镀敷形成的Cu膜中，膜中的结晶尺寸是5μm程度，但关于冷喷涂膜，由于主要通过20μm程度的粒子形成膜，所以冷喷涂膜208的最表面相比于通过湿式镀敷形成的Cu膜不平滑且不均匀，产生有凹凸。关于凹凸，例如根据通过激光显微镜在100μm×100μm的范围中测定出的线粗糙度导出的算术平均Ra最好为1μm以上10μm以下。此处的凹凸的大小通过非接触式的白光干涉仪(white interferometer)测定。
这样，通过在冷喷涂膜208的最表面存在不均匀的凹凸，由于对Cu导线进行键合时的载荷，凸部先变形，由键合载荷引起的向半导体装置的损害被吸收，并且由于Cu导线陷入到凹部而接合的比表面积增加，Cu导线的键合的接合质量提高。
此外，冷喷涂膜中的粒子尺寸例如是对冷喷涂膜进行剖面观察并通过电子线背散射衍射法(Electron Back Scatter Diffraction Patterns：EBSD)测定出的值。
另外，即使在从冷喷涂装置的喷嘴排出的粉体中有粒径为30μm以上的粒子，由于在向半导体装置碰撞时变形，所以即使在形成30μm的膜厚的冷喷涂膜208的情况下，也可以不一定使粉体的粒径成为30μm以下。
另外，在本实施方式中，在绝缘基板103上搭载有SiC的半导体装置，密封材料105为环氧材料，但由于SiC和密封树脂的线膨胀系数、弹性模量的差异，还存在由于半导体装置的动作中的发热所引起的热应力在半导体装置和密封材料105的界面中从半导体装置的端部起产生剥离的可能性。但是，在冷喷涂膜208的最表面有凹凸，所以还具有在将密封材料105导入到壳体102时，密封树脂卡合到冷喷涂膜208的凹凸，通过锚固效应不易剥离这样的效果。
通常，在形成Cu等金属膜的情况下，在使用溅射蒸镀法的情况下，膜厚是2～3μm，膜厚分布是纳米级，是平坦的。另外，在通过镀敷法形成金属膜的情况下，金属膜的膜厚是几μm～30μm，膜厚分布是亚微米级，是平坦的。
另一方面，如后所述，在本实施方式中，通过冷喷涂法，使用掩模形成金属膜，所以保护膜203的附近的膜厚比冷喷涂膜208的中心部分的厚度更薄。通过使该厚度的差成为1μm以上10μm以下，一边确保对Cu导线进行键合的中心部分的厚度，一边利用从该中心部分起的厚度分布，使冷喷涂膜208的表面积、即凹凸的面积变大，密封树脂更不易剥离。这样，冷喷涂膜208成为如下膜形状：具有厚度从其中心部分到端缘部分变薄的膜厚分布，并且冷喷涂膜208的表面具有1μm以上10μm以下的凹凸。在此，冷喷涂膜208的中心部分的膜厚是指，中心部分的1mm×1mm的范围中的测定值的平均值，保护膜203的附近的膜厚是指，从保护膜203起50μm的范围中的测定值的平均值。在此，在图14中，用实线231示出测定的冷喷涂膜208的平均值，并且将中心部分的膜厚和保护膜203的附近的膜厚的差表示为膜厚差232。
此外，在冷喷涂膜208的厚度的差232成为10μm以上时，中心部的膜厚过厚，中心部的膜内的内部应力变大，存在在冷喷涂膜208内部产生不良现象的可能性，在小于1μm时，接近平坦，所以密封树脂的剥离的抑制效果降低。因此，冷喷涂膜208的表面的凹凸最好为1μm以上10μm以下。在图14中，示意性地示出冷喷涂膜208的表面的凹凸，将突出部的高度233表示为一个例子。在冷喷涂膜208的厚度的差232是10μm程度的情况下，冷喷涂膜208的表面的凹凸突出部的高度233成为1μm以下程度。
在此，冷喷涂膜208的厚度能够通过超声波探伤法测定。即，利用从超声波探测器对成膜后的半导体装置发出的超声波通过Cu膜所需的时间、和直至在与Al合金电极202的界面中超声波被反射而返回为止的时间的差进行测定。
在Cu导线的键合中，接合部被挤压而比原来的线径更扩展，扩展的部分与保护膜203接触，从而存在保护膜203损伤的可能性，所以键合中心最好键合到从保护膜203离开100μm以上的位置，其结果，冷喷涂膜208键合到厚的部位，抑制由于键合时的载荷以及超声波振动在半导体装置中发生不良现象的效果提高。
<制造方法>
接下来，使用图5～图9，说明实施方式1所涉及的半导体装置的制造方法。此外，在以下的说明中为了简化而说明续流二极管104b的制造方法。
如图5所示，在设置有省略图示的扩散层的半导体基板201的第1主面201a上，例如用物理气相生长法(PVD)或者化学气相生长法(CVD)等真空成膜法，形成作为第1主电极210的Al合金电极202。之后，将半导体基板201从第2主面201b侧磨削，设为预定的厚度。
接下来，在磨削后的第2主面201b上，按照阻挡金属204、Ni电极205以及Au电极206的顺序，用例如真空成膜法形成，作为第2主电极220。
接下来，在Al合金电极202上，涂敷感光性聚酰亚胺(PI)并选择性地曝光，从而形成厚度2～10μm的保护膜203，但在保护膜203包括有机物的情况下，在形成Ni电极205以及Au电极206后成膜。之后，在保护膜203上，重叠冷喷涂用的掩模404。
图6示出从上表面侧观察形成了保护膜203的阶段的半导体晶片301的情况的俯视图。如图6所示，保护膜203在由切割线304包围的四边形的半导体装置形成区域302内，沿着切割线304设置，在切割线304上不形成保护膜203。
另外，图7是示出在保护膜203上重叠掩模404的状态的俯视图。掩模404覆盖保护膜203以及切割线304，半导体装置形成区域302的形成冷喷涂膜的部分成为开口部OP，材质是使用例如不锈钢(SUS)板，设为由冷喷涂装置排出的粉体不贯通掩模的厚度、例如0.5～5mm、优选1mm程度。此外，也可以成为在SUS板上在与保护膜203面对的部分，涂有与保护膜203同种的有机物的结构。由此，由于保护膜203和SUS板直接相接，保护膜203受伤的可能性可降低。
图8示出在重叠掩模404的半导体晶片301的上部配置冷喷涂装置420，从冷喷涂装置420的喷嘴422的前端朝向成为被接合面的Al合金电极202排出粉体423的状态。通过排出粉体423，在Al合金电极202上形成冷喷涂膜208。此外，粉体423是粒径100μm以下的金属粉体，在本实施方式中，作为能够与作为布线材料的Cu导线楔形键合的材料，使用Cu粉体。此外，粉体423也可以是Ni、Ag、Pd、Au等金属粉体。另外，在并非与Cu导线楔形键合，而是利用以Sn为基材的焊料材料，用焊料接合布线材料的情况下，是能够进行焊料接合的材料即可，也可以是以Sn为基材的焊料的粉体。
在此，说明冷喷涂装置420的概要。如图8所示，冷喷涂装置420经由设置于具有排出粉体423的喷嘴422的喷射枪421的与喷嘴422相反的一侧的配管424，与粉体供给装置(未图示)以及高压气体发生装置(未图示)连接。从粉体供给装置供给到配管424的粉体423在通过安装有加热器(未图示)的喷射枪421时被加热成高温。从高压气体发生装置对配管424供给高压气体，对被加热成高温的粉体423施力，从喷射枪421的前端的喷嘴422排出到作为被接合面的Al合金电极202上。
高压气体是非活性气体即可，例如是氮气，但也可以使用氩或者氦气。另外，高压气体的压力设为如下压力：在从喷嘴422的前端排出时，例如喷射压力成为0.1～10MPa，以1～1000ml/min的流速，粉体供给量成为1～100g/min。通过在这样的条件下喷涂粉体423，能够针对任意的排出时间，形成任意的膜厚的冷喷涂膜208。
另外，通过成为如上述的压力设定，如先前说明，能够从更微细的粒子起优先地开始碰撞到Al合金电极202而形成冷喷涂膜，之后，重量更重且粒径更大的粒子碰撞到先前形成的冷喷涂膜。
此外，加热器温度能够在150～700℃的范围中调整，根据排出的材料任意地选择。
另外，喷嘴422的前端和掩模404的距离设定为5mm程度，但只要在1mm～300mm之间，就能够形成冷喷涂膜208。该距离是用于如先前说明那样排除粒径大的粒子的距离，在从冷喷涂装置的喷嘴排出时，粒径大到得不到为了形成冷喷涂膜而充分的动能的程度的粒子由于排出气体的流动而从喷嘴422的前端与掩模404之间被弹到膜外。
在形成冷喷涂膜208之后，去掉掩模404，用鼓风机从半导体晶片301上去除未对成膜作出贡献的粉体。之后，为了使成膜的冷喷涂膜208不氧化而在具有还原性的液体中、或者在稍微地溶解Cu的酸性的液体中，通过超声波清洗，去掉未对成膜作出贡献的粉体。另外，也可以去除形成于冷喷涂膜208的最表面的氧化膜，之后，形成如苯并三唑那样的防锈覆膜而防止氧化。
进而，在如氮气那样的非活性气体气氛下使半导体晶片301干燥，在冷喷涂膜208内，缓和在粉体423的碰撞时发生的残留应力，并且使粒子彼此的接合界面再结晶化，形成更致密的金属膜。
将形成了冷喷涂膜208的半导体晶片301，用切割装置沿着切割线切割，如图9所示，单片化为续流二极管104b。
此外，利用氮气的干燥以及再结晶化也可以并非切割工序前而在切割后的工序中实施，例如，在模块100的装配工序中实施时高效，在芯片的管芯键合(chip die bonding)时利用回流热来干燥时高效。
<实施方式2>
在以上说明的实施方式1中，示出在半导体装置104的表面电极中形成有冷喷涂膜208的结构，但在实施方式2中，使用图10～图12，说明在背面电极中形成有冷喷涂膜的半导体装置的制造方法。此外，在图10～图12中，对与使用图5～图9说明的实施方式1相同的结构，附加同一符号，省略重复的说明。此外，在以下的说明中，为了简化，说明续流二极管104b的制造方法。
如图10所示，在设置有省略图示的扩散层的半导体基板201的第1主面201a上，形成作为第1主电极210的Al合金电极202。之后，将半导体基板201从第2主面201b侧磨削，设为预定的厚度。
接下来，在磨削后的第2主面201b上，按照阻挡金属204、Ni电极205以及Au电极206的顺序形成，作为第2主电极220。
接下来，在Al合金电极202上形成保护膜203，但在保护膜203包括有机物的情况下，在形成Ni电极205以及Au电极206后成膜。之后，在保护膜203上重叠冷喷涂用的掩模504a。
保护膜203的俯视时形状与使用图6说明的保护膜203相同，沿着切割线304设置，在切割线304上不形成。
另外，掩模504a的俯视时形状与使用图7说明的掩模404相同，半导体装置形成区域302的形成冷喷涂膜的部分成为开口部OP，覆盖切割线304上。此外，掩模504a的材质也与掩模404相同。
另外，在Au电极206上，重叠冷喷涂用的掩模504b。掩模504b的俯视时形状与使用图7说明的掩模404相同，半导体装置形成区域302的形成冷喷涂膜的部分成为开口部OP，覆盖切割线304上。此外，掩模504b的材质也与掩模404相同。
这样，将半导体晶片301从表面侧以及背面侧分别用掩模504a和504b夹住，将半导体晶片301的周围机械性地固定，在表面侧和背面侧同时在相对的位置以同一条件形成冷喷涂膜。
图11示出在分别重叠掩模504a以及504b的半导体晶片301的表面以及背面的上部，分别配置冷喷涂装置420，从各个冷喷涂装置420的喷嘴422的前端朝向成为被接合面的Al合金电极202以及Au电极206排出粉体423的状态。通过排出粉体423，在Al合金电极202以及Au电极206上，分别形成冷喷涂膜208a(第1冷喷涂膜)以及冷喷涂膜208b(第2冷喷涂膜)。此外，有时也将冷喷涂膜208a称为第1金属膜，将冷喷涂膜208b称为第2金属膜。
此外，粉体423是粒径100μm以下的金属粉体，在本实施方式中，作为能够与作为布线材料的Cu导线进行楔形键合的材料，使用Cu粉体。
此外，粉体423也可以是Ni、Ag、Pd、Au等金属粉体。另外，在并非与Cu导线进行楔形键合，而是利用以Sn为基材的焊料材料，用焊料接合布线材料的情况下，是能够进行焊料接合的材料即可，也可以是以Sn为基材的焊料的粉体。
此外，背面侧的冷喷涂膜208b在不与Cu导线接合的情况下，其金属只要是与Ni的反应性良好且焊料的密接性优良的材料，则无需是Cu，是例如Ni、Au、Ag、Pd、Sn等与以Sn为基材的焊料的反应性良好的金属材料即可。另外，在半导体装置104与绝缘基板103上的导体图案通过Ag烧结进行接合的情况下，也可以作为冷喷涂膜208b的金属，使用与Ag的反应性良好的Au、Ag、Pd等。
另外，冷喷涂膜208a以及208b最好为相同的金属材料且相同的膜厚。通过采用这样的结构，抑制半导体晶片301的翘曲的效果提高，能够抑制在制造中半导体晶片301破裂。
在此，相同的膜厚意味着在冷喷涂膜208a以及208b各自的中心部分的1mm×1mm的范围中测定出的平均值(平均膜厚)相同。而且，如先前使用图14的说明，中心部分的膜厚和保护膜203的附近的膜厚的膜厚差232成为10μm以下，并且冷喷涂膜208的最表面具有1μm程度的凹凸，所以如果冷喷涂膜208a和208b的膜厚的平均值的差是10μm以下，则设为相同的膜厚。
此外，冷喷涂装置420的结构在实施方式1中已说明，所以省略说明。
如上所述，通过在半导体晶片301的表面侧以及背面侧，分别形成同一膜厚的冷喷涂膜208a以及208b，抑制半导体晶片301向某一方面侧翘曲。
在形成冷喷涂膜208a以及208b之后，去掉掩模504a以及504b，用鼓风机从半导体晶片301上去除未对成膜作出贡献的粉体。之后，为了使成膜的冷喷涂膜208a以及208b不氧化而在具有还原性的液体中、或者在稍微溶解Cu的酸性的液体中，通过超声波清洗，去掉未对成膜作出贡献的粉体。另外，也可以去除在冷喷涂膜208a以及208b的最表面形成的氧化膜，之后，形成如苯并三唑那样的防锈覆膜而防止氧化。
将形成了冷喷涂膜208a以及208b的半导体晶片301，用切割装置沿着切割线切割，如图12所示，单片化为续流二极管104b。
这样形成的续流二极管104b在表面侧以及背面侧分别具有冷喷涂膜208a以及208b，在哪个面都能够接合Cu导线。此外，不接合Cu导线的一方的面通过焊料接合到绝缘基板103上的导体图案，但通过具有冷喷涂膜，接合部的可靠性大幅提高。
此外，在上述制造方法中，用掩模504b覆盖切割线304上，所以在图12所示的续流二极管104b中，冷喷涂膜208b的端面的位置存在于从与切割线相当的半导体基板201的端面离开预定距离的场所，但在切割工序中能够充分地切断在背面侧成膜的冷喷涂膜208b的情况下，并非一定需要背面侧的冷喷涂用的掩模504b，也可以在半导体晶片301的背面整个面形成冷喷涂膜208b。
在该情况下，如图13所示，在续流二极管104b的背面整个面形成冷喷涂膜208b。此外，在本实施方式中，说明了在半导体晶片的表面侧以及背面侧同时形成冷喷涂膜的方法，但也可以各个单面逐次成膜，成膜顺序也没有特别限定。另外，膜厚也可以并非一定相同。
<变形例>
在以上说明的实施方式2中，采用在Au电极206上形成冷喷涂膜208b的结构，但也可以设为不设置Au电极206而在Ni电极205上成膜的结构。在该情况下，可不使用昂贵的Au，所以能够廉价地制造半导体装置。
在Ni电极205上形成冷喷涂膜208b时，通过从冷喷涂装置排出的金属粉体具有的热能和动能由于碰撞到作为被接合面的Ni电极205而产生的摩擦热(能量)，在金属粉体以及Ni电极205各自的最表面处产生变形而相互缠绕。另外，各个最表面的金属氧化膜被去除，在通过在金属粉体和Ni电极205的界面处产生的反应形成的膜上，从冷喷涂装置连续地排出金属粉体，连续地碰撞到先前形成的冷喷涂膜上，从而膜厚增加，最终地成为冷喷涂膜208b。
在此，在Ni电极205上成膜的冷喷涂膜208b和在Al合金电极202上成膜的冷喷涂膜208a都具有相同的粒径分布，但背面侧的冷喷涂膜208b在不与Cu导线接合的情况下，其金属只要是与Ni的反应性良好且焊料的密接性优良的材料，则无需是Cu，是例如Ni、Au、Ag、Pd、Sn等与以Sn为基材的焊料的反应性良好的金属材料即可。另外，在半导体装置104与绝缘基板103上的导体图案通过Ag烧结进行接合的情况下，也可以作为冷喷涂膜208b的金属，使用与Ag的反应性良好的Au、Ag、Pd等。
<实施方式3>
图15是安装有本发明所涉及的实施方式3的半导体装置的半导体装置模块(以下称为模块)300的剖面图。图16是从上方观察模块300的部分俯视图，省略关闭开口部的罩以及密封树脂等。此外，图A-B-A线中的箭头方向的剖面是图15的剖面。此外，在图15以及图16中，对与使用图1以及图2说明的模块100相同的结构，附加同一符号，省略重复的说明。
如图15所示，模块300在半导体装置104的上部的主布线并非Cu导线而包括基于Cu板的板状布线108a这一点上与实施方式1的模块100不同。
即，板状布线108a是在壳体102内设置的端子的一部分，其一方的端部还作为端子发挥功能，所以称为板上端子。通过使用板状布线108a，能够增加半导体装置104的与上表面电极109的接触面积，能够降低接触电阻。
板状布线108a通过利用端子接合焊料107c(有时称为焊料107c)接合开关器件104a的上表面电极109和续流二极管104b的上表面电极109，对两个器件进行接线。板状布线108a在与开关器件104a的上表面电极109对应的位置以及与续流二极管104b的上表面电极109对应的位置具有开口部OP，通过在该开口部OP填充焊料107c，各上表面电极109和板状布线108a导通。此外，焊料107c也可以是与芯片下焊料107a不同的组成的焊料材料，并且还可以并非焊料而使用含有Ag的粘接剂或者Ag烧结材料接合板状布线108a的板状端子和上表面电极109。此外，在各上表面电极109的端缘部，设置有保护膜203。
另外，开关器件104a的栅电极109a经由栅极布线106b与上侧导体图案103c连接，并且栅极布线106b与信号用端子108b也接线。另外，开关器件104a的上表面电极109经由信号检测布线106c与上侧导体图案103f连接，并且信号检测布线106c与信号用端子108c也接线。
板状布线108a具有能够使电流流过的电传导性即可，也可以是热膨胀率比Cu小的板材，还可以是成为在作为Fe-Ni合金的殷钢的表背面实施Cu镀敷而成的Cu-Invar-Cu的多层构造的板材。
另外，板状布线108a与主端子是一体的，但也可以是独立地设置主端子和板状布线，用焊接、钎焊、超声波接合等接合方法接合而成为一体的构造。
另外，也可以如图1所示，设置与源电极电连接的上侧导体图案103b，用焊料连接上侧导体图案103b和板状布线108a，如图1所示，将上侧导体图案103b和端子108用布线106连接，还可以用板状布线连接。
图17示出在图15的模块300中由虚线包围的区域A的部分放大图。如图17所示，布线路径长度越短，越能够降低电感，所以板状布线108a和保护膜203的距离最好尽可能短。另一方面，为了缓和在保护膜203的上部集中的电场强度，板状布线108a和保护膜203的距离最好为300μm以上。在本实施方式3中，保护膜203和板状布线108a的板状端子的距离设定为300μm至700μm的范围。
半导体装置104在动作中发热，温度分布成：半导体装置104的中心部成为高温，温度按照同心圆状变低。冷喷涂膜208如使用图14的说明，相比于端部，中心部的膜厚更厚，所以具有能够在经由板状布线108a的板状端子对来自半导体装置104的上部的热进行散热的路径中，高效地散热这样的性能。
另外，通过利用热传导率比焊料材料优良的Cu材料形成冷喷涂膜208，还得到能够从冷喷涂膜208的厚膜部的上部高效地散热这样的效果。
另外，冷喷涂膜208表面如使用图14在实施方式1中的说明，在表面具有凹凸，所以相比于表面平滑的情况，与焊料材料的接合面积变大而接合强度提高。
由于半导体装置104的动作所致的发热，起因于半导体装置104、冷喷涂膜208、端子接合焊料107c以及板状布线108a的板状端子的各种材料的线膨胀率的差，在剪切方向上发生应力，由于该应力，对于线膨胀率大的端子接合焊料107c的膨胀收缩，劣化从与线膨胀率小的半导体装置104的接合界面起发展。
半导体装置104、冷喷涂膜208、端子接合焊料107c、板状布线108a的板状端子各自的线膨胀率是4.2×10-6/K、16.8×10-6/K、20～25×10-6/K、16.8×10-6/K。
此外，端子接合焊料107c根据组成而线膨胀率不同。在半导体装置104与端子接合焊料107c之间存在Cu的冷喷涂膜208，所以冷喷涂膜208成为应力缓冲层而降低在端子接合焊料107c中发生的应力。另外，冷喷涂膜208具有中心部的膜厚比端部更厚的特点，能够降低端子接合焊料107c的外观上的线膨胀率。
另外，如使用图18的说明，冷喷涂膜208具有如下特点：膜厚方向上的中央部的空隙的数量(密度)比接近Al合金电极202的区域中的空隙的数量多，并且比最表面附近的空隙的数量多。因此，还得到如下效果：能够在冷喷涂膜208中心部分的空隙多的区域中缓和由于在半导体装置104动作时的反复发热而发生的应力。
虽然详细说明了本发明，但上述说明在所有方案中仅为例示，本发明不限于此。应被理解为不脱离本发明的范围而能够设想未例示的无数的变形例。
此外，本发明能够在该发明的范围内，自由地组合各实施方式或者将各实施方式适宜地变形、省略。

Claims (15)

1.一种半导体装置，具备：
第1主电极及第2主电极，分别配设于半导体基板的第1主面上及第2主面上；
保护膜，配设于所述第1主电极的端缘部上；以及
第1金属膜，配设于所述第1主电极上的由所述保护膜包围的区域，
所述第1金属膜是冷喷涂膜，中心部分的膜厚比与所述保护膜相接的部分的膜厚更厚且在表面具有凹凸。
2.根据权利要求1所述的半导体装置，其中，
所述第1金属膜的中心部分的膜厚和与所述保护膜相接的部分的膜厚的差是1μm以上且10μm以下。
3.根据权利要求1所述的半导体装置，其中，
所述凹凸是突出部的高度为1μm以下的凹凸。
4.根据权利要求1所述的半导体装置，其中，
所述第1金属膜具有如下膜构造：越接近所述第1主电极，粉体粒子间隔越致密，随着远离所述第1主电极，粉体粒子间隔变大，随着接近最表面，粉体粒子间隔变得致密。
5.根据权利要求1所述的半导体装置，其中，
还具备第2金属膜，该第2金属膜配设于所述第2主电极上，
所述第2金属膜是与所述第1金属膜相同的金属材料，具有平均膜厚相同的膜厚。
6.根据权利要求1至5中的任意一项所述的半导体装置，其中，
具备布线，该布线与所述第1金属膜的上部连接，
所述布线包括导线。
7.根据权利要求1至5中的任意一项所述的半导体装置，其中，
具备布线，该布线与所述第1金属膜的上部连接，
所述布线包括板材。
8.一种半导体装置的制造方法，该半导体装置具备分别配设于半导体基板的第1主面上以及第2主面上的第1主电极以及第2主电极，所述制造方法具备：
(a)以覆盖在保护膜上的方式重叠掩模的工序，所述保护膜是在所述第1主电极上选择性地形成的；以及
(b)形成第1冷喷涂膜的工序，其中，利用冷喷涂装置，经由所述掩模在所述第1主电极上喷射金属粉体，由此使得该第1冷喷涂膜的中心部分的膜厚比与所述保护膜相接的部分的膜厚更厚且在表面具有凹凸。
9.根据权利要求8所述的半导体装置的制造方法，其中，
所述工序(b)包括：
在所述第2主电极上喷射所述金属粉体，由此与所述第1冷喷涂膜同时形成第2冷喷涂膜的工序。
10.根据权利要求8或者9所述的半导体装置的制造方法，其中，
所述工序(b)包括：
所述金属粉体具有粒径分布，设定所述金属粉体的喷射压力，以使得形成所述粒径分布的峰值的粒径以下的粒子先到达被接合面，具有超过形成所述峰值的粒径的粒径的粒子后到达被接合面的工序。
11.根据权利要求10所述的半导体装置的制造方法，其中，
所述喷射压力被设定为0.1～10MPa的范围的压力。
12.根据权利要求10所述的半导体装置的制造方法，其中，
形成所述峰值的粒径包括以20μm为中心的前后10％的范围的粒径。
13.根据权利要求8所述的半导体装置的制造方法，其中，
所述工序(b)包括：
以使得从所述冷喷涂装置排出所述金属粉体的喷嘴的前端和所述掩模的距离成为1mm～300mm的范围的方式设定所述喷嘴位置的工序。
14.根据权利要求9所述的半导体装置的制造方法，其中，
所述工序(b)包括：
用与所述第1冷喷涂膜相同的金属材料，以成为相同的膜厚的方式，形成所述第2冷喷涂膜的工序。
15.根据权利要求8所述的半导体装置的制造方法，其中，
所述金属粉体是Cu或者Cu合金。
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