CN111341858A - 一种叠层富硅碳化硅薄膜太阳能电池及制备方法 - Google Patents
一种叠层富硅碳化硅薄膜太阳能电池及制备方法 Download PDFInfo
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Abstract
本发明公开了一种叠层富硅碳化硅薄膜太阳能电池及制备方法，从下至上依次包括ITO导电玻璃、硼掺杂非晶碳化硅薄膜、叠层富硅碳化硅薄膜、磷掺杂非晶碳化硅薄膜、铝电极，其中，叠层富硅碳化硅薄膜由多层不同硅碳比的富硅碳化硅薄膜组成，且通过激光晶化技术形成具有不同光学带隙的镶嵌型硅量子点薄膜吸收层。本发明设计具有不同硅碳比的叠层富硅碳化硅薄膜吸收层，更有效地控制各个子层的光学带隙，能够拓宽光谱响应范围，更有效的提高光吸收率，从而有利于获得比较高的光电转化效率。
Description
技术领域
本发明属于光电技术领域，尤其涉及一种叠层富硅碳化硅薄膜太阳能电池及制备方法。
背景技术
硅基太阳能电池，由于其原材料丰富、制造工艺成熟等优势，被认为是未来希望大规模使用的太阳能电池的首选，硅基太阳能电池也是当前和未来发展的主流。在传统晶硅材料太阳能电池中，单晶硅的光学带隙为1.1eV，正好落在太阳光谱的峰值附近，但由于其间接带隙的能带结构，使其对可见光波段的吸收系数较低。同时，由于长波长侧的透射损失与短波长侧的热弛豫损失，以及结损失、复合损失等，导致单结晶体硅太阳能电池的光电转换效率理论计算值只有30％，称为Shockley-Queisser转换效率极限。为了突破这一极限，发展高效率、低成本的第三代硅基太阳能电池，关键就是减少长波长和短波长的光学损失。利用能带工程，通过调控半导体的能带结构，增加具有不同带隙的材料数目以匹配太阳光谱，实现宽光谱响应，是解决上述能量损失的有效方法。基于此，随着纳米技术的不断发展，硅基纳米结构在新一代太阳能电池中的应用引起了国内外研究者的广泛关注。
现有技术中已有的一种基于纳米硅量子点材料的叠层太阳能电池结构，电池结构为p-i-n型结构，叠层吸收层的设计是采用了具有不同量子点尺寸的硅量子点薄膜，p层和n层的设计是采用硼掺杂非晶硅薄膜和磷掺杂非晶硅薄膜。不同的硅量子点尺寸薄膜具有不同的光学带隙，这样可以有效地拓宽吸收层的光响应范围，从而有利于太阳能电池光电转化效率的提升。不同尺寸的硅量子点薄膜是通过限制性热退火晶化工艺生长的，子层与子层之间是通过SiO2介质层对硅量子点尺寸进行条件性的限制。
但是，叠层硅量子点薄膜吸收层中硅量子点的大小和均匀度难以控制，从而影响到各个子层的光学带隙，导致太阳能电池光电转换效率的降低。叠层硅量子点薄膜吸收层中子层与子层之间存在SiO2介质层，从而影响载流子在纵向方向上的输运，导致太阳能电池光电转换效率的降低。在形成硅量子点材料的过程中，需要高温热处理的工艺，无法实现制备过程低能耗。
发明内容
发明目的：针对以上问题，本发明提出一种叠层富硅碳化硅薄膜太阳能电池及制备方法，具有不同硅碳比的叠层富硅碳化硅薄膜吸收层，可有效地控制各个子层的光学带隙，拓宽光谱响应范围，提高光吸收率。
技术方案：为实现本发明的目的，本发明所采用的技术方案是：一种叠层富硅碳化硅薄膜太阳能电池，从下至上依次包括ITO导电玻璃、硼掺杂非晶碳化硅薄膜、叠层富硅碳化硅薄膜、磷掺杂非晶碳化硅薄膜、铝电极，其中，叠层富硅碳化硅薄膜由多层不同硅碳比的富硅碳化硅薄膜组成，且通过激光晶化技术形成具有不同光学带隙的镶嵌型硅量子点薄膜吸收层。
进一步地，所述ITO导电玻璃包括ITO导电层和玻璃。
一种叠层富硅碳化硅薄膜太阳能电池制备方法，包括步骤：
(1)选择ITO导电玻璃作为衬底；
(2)通过等离子体增强气相沉积工艺，在ITO导电玻璃衬底上生长一层硼掺杂非晶碳化硅薄膜；
(3)通过等离子体增强气相沉积工艺，在硼掺杂非晶碳化硅薄膜上，依次生长不同硅碳比的叠层富硅碳化硅薄膜；
(4)通过等离子体增强气相沉积工艺，在叠层富硅碳化硅薄膜层上生长一层磷掺杂非晶碳化硅薄膜；
(5)通过KrF准分子脉冲激光晶化技术，在叠层富硅碳化硅薄膜中形成具有不同光学带隙的镶嵌型硅量子点薄膜吸收层；
(6)在磷掺杂非晶碳化硅薄膜层上蒸镀整面铝电极。
进一步地，所述步骤3中，通过通入一定气体流量比的硅烷和甲烷混合气体，沉积生长获得对应硅碳比的富硅碳化硅薄膜。
进一步地，所述步骤3中，每个固定硅碳比的富硅碳化硅薄膜厚度相同。
进一步地，所述步骤2中，通过通入一定气体流量比的硅烷、甲烷和硼烷混合气体，沉积生长获得p型非晶碳化硅薄膜。
进一步地，所述步骤4中，通过通入一定气体流量比的硅烷、甲烷和磷烷混合气体，沉积生长获得n型非晶碳化硅薄膜。
有益效果：本发明设计了具有不同硅碳比的叠层富硅碳化硅薄膜吸收层，更有效地控制各个子层的光学带隙，能够拓宽光谱响应范围，更有效的提高光吸收率，从而有利于获得比较高的光电转化效率。
本发明采用碳化硅介质，与SiO2介质层相比，碳化硅介质更有利于硅量子点载流子纵向的输运性能，从而有利于获得比较高的光电转化效率。镶嵌在碳化硅中的硅量子点更有利于载流子纵向的输运性能，有助于提高电池的光电转化效率。
本发明采用激光晶化硅量子点工艺，避免了高温热退火晶化工艺过程中的高能耗，从而有利于降低太阳能电池的制备成本。本发明的叠层富硅碳化硅薄膜太阳能电池的光电转化效率能够达到6.2％，达到了目前商用硅基薄膜太阳能电池的应用标准。
附图说明
图1是本发明所述的叠层富硅碳化硅薄膜太阳能电池结构示意图；
图2是本发明所述的叠层富硅碳化硅薄膜太阳能电池顶层电极示意图。
具体实施方式
下面结合附图和实施例对本发明的技术方案作进一步的说明。
如图1所示，本发明所述的叠层富硅碳化硅薄膜太阳能电池，其结构从下至上依次包括：ITO导电玻璃1；硼掺杂非晶碳化硅(B-doped a-SiC)薄膜2，薄膜厚度为10nm；叠层富硅碳化硅薄膜3，薄膜厚度为60nm；磷掺杂非晶碳化硅(P-doped a-SiC)薄膜4，薄膜厚度为10nm；铝Al电极5。其中，叠层富硅碳化硅薄膜由三层不同硅碳比的富硅碳化硅薄膜组成。
本发明所述的叠层富硅碳化硅薄膜太阳能电池，其制备方法为：
(1)选择ITO导电玻璃1作为衬底使用，ITO导电玻璃1又包括ITO导电层11和玻璃12，ITO导电层11置于顶层，太阳光可以从底层玻璃12射入；
(2)通过等离子体增强气相沉积工艺(PECVD)制备，在ITO导电玻璃1衬底上生长一层硼掺杂非晶碳化硅(B-doped a-SiC)薄膜2，薄膜厚度为10nm；
通过等离子体增强气相沉积工艺(PECVD)制备，在生长过程中，射频源的频率为13.56MHz，射频功率和生长衬底温度分别控制在30W和250℃，生长时真空室内的背景真空度在10mTorr以下，通入硅烷(SiH4)、甲烷(CH4)和硼烷(B2H6)混合气体，气体流量比值SiH4:CH4:B2H6＝5sccm:5sccm:3sccm，沉积时间为5分钟，生长后获得厚度约为10nm的p型非晶碳化硅薄膜。
(3)通过PECVD制备工艺在硼掺杂非晶碳化硅薄膜2上，至下而上依次生长硅碳比(Si:C)为5:5、10:5和20:5的叠层富硅碳化硅薄膜3，每个固定硅碳比的富硅碳化硅薄膜厚度为20nm，整个叠层富硅碳化硅薄膜3的厚度为60nm；
通过PECVD方法制备，在生长过程中，射频源的频率为13.56MHz，射频功率和生长衬底温度分别控制在20W和250℃，生长时真空室内的背景真空度在10mTorr以下。通入硅烷(SiH4)和甲烷(CH4)混合气体，气体流量比值SiH4:CH4＝5sccm:5sccm，沉积时间为8分钟，生长后获得厚度约为20nm、硅碳比为5:5的富硅碳化硅薄膜31。接着，通入气体流量比值SiH4:CH4＝10sccm:5sccm的硅烷和甲烷的混合气体，沉积时间为8分钟，获得厚度约为20nm、硅碳比为10:5的富硅碳化硅薄膜32。最后，通入气体流量比值SiH4:CH4＝20sccm:5sccm的硅烷和甲烷的混合气体，沉积时间为8分钟，获得厚度约为20nm、、硅碳比为20:5的富硅碳化硅薄膜33。最后形成厚度为60nm的叠层富硅碳化硅薄膜3。
(4)通过PECVD制备工艺在叠层富硅碳化硅薄膜层3上生长一层磷掺杂非晶碳化硅(P-doped a-SiC)薄膜4，薄膜厚度为10nm；
通过等离子体增强气相沉积工艺(PECVD)制备，在生长过程中，射频源的频率为13.56MHz，射频功率和生长衬底温度分别控制在30W和250℃，生长时真空室内的背景真空度在10mTorr以下，通入硅烷(SiH4)、甲烷(CH4)和磷烷(PH3)混合气体，气体流量比值SiH4:CH4:PH3＝5sccm:5sccm:3sccm，沉积时间为5分钟，生长后获得厚度约为10nm的n型非晶碳化硅薄膜。
(5)通过KrF准分子脉冲激光晶化技术，获得具有不同光学带隙的镶嵌于碳化硅中的硅量子点薄膜吸收层；
KrF准分子脉冲激光器选择波长为248nm，脉冲宽度选择为30ns，激光脉冲能量密度选择为200mJ/cm2，晶化时间为10个脉冲。最终在叠层富硅碳化硅薄膜3中形成镶嵌型硅量子点材料。
(6)在磷掺杂非晶碳化硅薄膜层4上蒸镀一整面铝电极5，厚度为200nm。
测试叠层富硅碳化硅薄膜吸收层的光学带隙参数，如表1所示。
表1
| 不同硅碳比的碳化硅薄膜材料+镶嵌型硅量子点 | 光学带隙 |
| Si:C＝5:5的碳化硅薄膜材料+镶嵌型硅量子点 | 2.01eV |
| Si:C＝10:5的碳化硅薄膜材料+镶嵌型硅量子点 | 1.90eV |
| Si:C＝20:5的碳化硅薄膜材料+镶嵌型硅量子点 | 1.85eV |
由表1可知，本发明所述的叠层富硅碳化硅薄膜太阳能电池可有效拓宽光谱响应范围，更有效的提高光吸收率，从而有利于获得比较高的光电转化效率。
Claims (7)
1.一种叠层富硅碳化硅薄膜太阳能电池，其特征在于，从下至上依次包括ITO导电玻璃(1)、硼掺杂非晶碳化硅薄膜(2)、叠层富硅碳化硅薄膜(3)、磷掺杂非晶碳化硅薄膜(4)、铝电极(5)，其中，叠层富硅碳化硅薄膜(3)由多层不同硅碳比的富硅碳化硅薄膜组成，且通过激光晶化技术形成具有不同光学带隙的镶嵌型硅量子点薄膜吸收层。
2.根据权利要求1所述的叠层富硅碳化硅薄膜太阳能电池，其特征在于，所述ITO导电玻璃(1)包括ITO导电层(11)和玻璃(12)。
3.一种叠层富硅碳化硅薄膜太阳能电池制备方法，其特征在于，包括步骤：
(1)选择ITO导电玻璃(1)作为衬底；
(2)通过等离子体增强气相沉积工艺，在ITO导电玻璃(1)衬底上生长一层硼掺杂非晶碳化硅薄膜(2)；
(3)通过等离子体增强气相沉积工艺，在硼掺杂非晶碳化硅薄膜(2)上，依次生长不同硅碳比的叠层富硅碳化硅薄膜(3)；
(4)通过等离子体增强气相沉积工艺，在叠层富硅碳化硅薄膜层(3)上生长一层磷掺杂非晶碳化硅薄膜(4)；
(5)通过KrF准分子脉冲激光晶化技术，在叠层富硅碳化硅薄膜(3)中形成具有不同光学带隙的镶嵌型硅量子点薄膜吸收层；
(6)在磷掺杂非晶碳化硅薄膜层(4)上蒸镀整面铝电极(5)。
4.根据权利要求3所述的叠层富硅碳化硅薄膜太阳能电池，其特征在于，所述步骤3中，通过通入一定气体流量比的硅烷和甲烷混合气体，沉积生长获得对应硅碳比的富硅碳化硅薄膜。
5.根据权利要求3所述的叠层富硅碳化硅薄膜太阳能电池，其特征在于，所述步骤3中，每个固定硅碳比的富硅碳化硅薄膜厚度相同。
6.根据权利要求3所述的叠层富硅碳化硅薄膜太阳能电池，其特征在于，所述步骤2中，通过通入一定气体流量比的硅烷、甲烷和硼烷混合气体，沉积生长获得p型非晶碳化硅薄膜。
7.根据权利要求3所述的叠层富硅碳化硅薄膜太阳能电池，其特征在于，所述步骤4中，通过通入一定气体流量比的硅烷、甲烷和磷烷混合气体，沉积生长获得n型非晶碳化硅薄膜。
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