CN111328175B - 匹配箱的阻抗调节方法、系统、装置及射频电源系统 - Google Patents
匹配箱的阻抗调节方法、系统、装置及射频电源系统 Download PDFInfo
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- CN111328175B CN111328175B CN202010290812.XA CN202010290812A CN111328175B CN 111328175 B CN111328175 B CN 111328175B CN 202010290812 A CN202010290812 A CN 202010290812A CN 111328175 B CN111328175 B CN 111328175B
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- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000003990 capacitor Substances 0.000 claims abstract description 108
- 230000001105 regulatory effect Effects 0.000 claims description 9
- 238000004590 computer program Methods 0.000 claims description 6
- 238000004364 calculation method Methods 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 13
- 238000010606 normalization Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 230000009471 action Effects 0.000 description 3
- 239000004576 sand Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2242/00—Auxiliary systems
- H05H2242/20—Power circuits
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- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Transmitters (AREA)
- Plasma Technology (AREA)
Abstract
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Priority Applications (1)
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CN202010290812.XA CN111328175B (zh) | 2020-04-14 | 2020-04-14 | 匹配箱的阻抗调节方法、系统、装置及射频电源系统 |
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CN202010290812.XA CN111328175B (zh) | 2020-04-14 | 2020-04-14 | 匹配箱的阻抗调节方法、系统、装置及射频电源系统 |
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CN111328175A CN111328175A (zh) | 2020-06-23 |
CN111328175B true CN111328175B (zh) | 2022-03-22 |
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CN202010290812.XA Active CN111328175B (zh) | 2020-04-14 | 2020-04-14 | 匹配箱的阻抗调节方法、系统、装置及射频电源系统 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN115865031B (zh) * | 2022-12-12 | 2023-09-29 | 华中科技大学 | 一种用于射频系统的搜索记忆式阻抗匹配调节方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6946847B2 (en) * | 2002-02-08 | 2005-09-20 | Daihen Corporation | Impedance matching device provided with reactance-impedance table |
US7489145B2 (en) * | 2005-12-14 | 2009-02-10 | Daihen Corporation | Plasma processing system |
CN101217096B (zh) * | 2007-01-04 | 2010-09-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种快速rf自动阻抗匹配方法 |
JP5632626B2 (ja) * | 2010-03-04 | 2014-11-26 | 東京エレクトロン株式会社 | 自動整合装置及びプラズマ処理装置 |
CN102611373B (zh) * | 2011-01-19 | 2014-08-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 步进电机的控制方法、装置及阻抗匹配器 |
CN105097397B (zh) * | 2014-05-22 | 2018-05-08 | 北京北方华创微电子装备有限公司 | 阻抗匹配装置及半导体加工设备 |
KR102460246B1 (ko) * | 2016-03-04 | 2022-10-27 | 램 리써치 코포레이션 | 단계적 방식으로 임피던스 매칭 네트워크를 튜닝하기 위한 시스템들 및 방법들 |
KR101989518B1 (ko) * | 2018-04-24 | 2019-06-14 | 주식회사 뉴파워 프라즈마 | 가상 임피던스 자동 매칭 방법 |
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- 2020-04-14 CN CN202010290812.XA patent/CN111328175B/zh active Active
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Effective date of registration: 20211209 Address after: 518000 functional supporting area B, Taohuayuan Zhichuang Town, Tiegang community, Xixiang street, Bao'an District, Shenzhen, Guangdong 101201301 Applicant after: SHENZHEN HENGYUNCHANG VACUUM TECHNOLOGY CO.,LTD. Address before: 518102 zone 2, 10th floor, building F, Xinghui Science Park, Gushu 2nd Road, Xixiang street, Bao'an District, Shenzhen, Guangdong Applicant before: SHENZHEN HENGYUNCHANG VACUUM TECHNOLOGY CO.,LTD. Applicant before: Shenzhen BAISHIDA Semiconductor Equipment Co.,Ltd. |
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Inventor after: Yue Weiping Inventor after: Lin Weiqun Inventor after: Yao Zhiyi Inventor before: Yue Weiping Inventor before: Zhang Guidong Inventor before: Lin Weiqun Inventor before: Yao Zhiyi |
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Address after: 518102 Room 101, 201, 301, Building B, Functional Support Area, Taohuayuan Zhichuang Town, Tiegang Community, Xixiang Street, Baoan District, Shenzhen, Guangdong Province Patentee after: Shenzhen Hengyunchang Vacuum Technology Co.,Ltd. Address before: 518000 functional supporting area B, Taohuayuan Zhichuang Town, Tiegang community, Xixiang street, Bao'an District, Shenzhen, Guangdong 101201301 Patentee before: SHENZHEN HENGYUNCHANG VACUUM TECHNOLOGY CO.,LTD. |