CN111307366A - Combined sensor, manufacturing method thereof and electronic device - Google Patents
Combined sensor, manufacturing method thereof and electronic device Download PDFInfo
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- CN111307366A CN111307366A CN202010222767.4A CN202010222767A CN111307366A CN 111307366 A CN111307366 A CN 111307366A CN 202010222767 A CN202010222767 A CN 202010222767A CN 111307366 A CN111307366 A CN 111307366A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/148—Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R3/00—Circuits for transducers, loudspeakers or microphones
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- Acoustics & Sound (AREA)
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Abstract
The invention discloses a combined sensor, a manufacturing method thereof and electronic equipment. Wherein the combination sensor includes: the packaging body comprises a substrate and a cover plate, wherein the substrate and the cover plate are in bonding connection through a bonding structure and enclose to form an accommodating cavity; the environment sensor comprises an environment sensing chip and a first integrated circuit chip which is electrically connected with the environment sensing chip, and the environment sensing chip and the first integrated circuit chip are both arranged in the accommodating cavity; and the acoustic sensor comprises a microphone chip and a second integrated circuit chip electrically connected with the microphone chip, and the microphone chip and the second integrated circuit chip are arranged in the accommodating cavity. The technical scheme of the invention can effectively reduce the thickness of the combined sensor and realize the miniaturization of the combined sensor.
Description
Technical Field
The present invention relates to the field of sensor technologies, and in particular, to a combination sensor, a manufacturing method thereof, and an electronic device.
Background
With the trend of "light, thin, short, and small" of consumer electronics products such as mobile phones, watches, and earphones, the development direction of the core component sensor is also toward miniaturization and integration. The environment sensor (such as an air pressure sensor) and the acoustic sensor (such as a microphone sensor) are standard matching devices of such electronic products, and the environment sensor and the acoustic sensor are integrated and packaged into a combined sensor, so that more information can be collected, and more functions can be realized. However, at present, such a combined sensor is usually packaged in a separate housing, because the packaging scheme using a separate housing requires that the height of the housing is greater than the sum of the thickness of the chip and the thickness of the package substrate. However, this increases the overall thickness of the combination sensor, which is disadvantageous for miniaturization.
The above is only for the purpose of assisting understanding of the technical aspects of the present invention, and does not represent an admission that the above is prior art.
Disclosure of Invention
The invention provides a combined sensor, a manufacturing method thereof and electronic equipment, aiming at effectively reducing the thickness of the combined sensor and realizing the miniaturization of the combined sensor.
In order to achieve the above object, the present invention provides a combination sensor, including: the packaging body comprises a substrate and a cover plate, wherein the substrate and the cover plate are in bonding connection through a bonding structure and enclose to form an accommodating cavity; the environment sensor comprises an environment sensing chip and a first integrated circuit chip which is electrically connected with the environment sensing chip, and the environment sensing chip and the first integrated circuit chip are both arranged in the accommodating cavity; and the acoustic sensor comprises a microphone chip and a second integrated circuit chip electrically connected with the microphone chip, and the microphone chip and the second integrated circuit chip are arranged in the accommodating cavity.
Optionally, the accommodating cavity includes a first sub-accommodating cavity, a second sub-accommodating cavity, a third sub-accommodating cavity and a fourth sub-accommodating cavity that are independent of each other, the environment sensing chip is disposed in the first sub-accommodating cavity, the microphone chip is disposed in the second sub-accommodating cavity, the first integrated circuit chip is disposed in the third sub-accommodating cavity, and the second integrated circuit chip is disposed in the fourth sub-accommodating cavity.
Optionally, the environmental sensor is an air pressure sensor, and the cover plate is further provided with a first through hole communicated with the first sub-accommodating cavity; and/or the cover plate is also provided with a second through hole communicated with the second sub-accommodating cavity.
Optionally, defining a thickness direction of the substrate as an up-down direction, a direction toward the cover plate as an up direction, and a direction away from the cover plate as a down direction, where an upper surface of the substrate is provided with a first electrode layer, and an upper surface of the first electrode layer is provided with a first bonding structure; a second electrode layer is arranged on the lower surface of the cover plate, and a second bonding structure corresponding to the first bonding structure is arranged on the lower surface of the second electrode layer; the first bonding structure is bonded with the second bonding structure and surrounds the substrate and the cover plate together to form the accommodating cavity.
Optionally, a first insulating layer is further disposed on an upper surface of the first electrode layer, a conductive layer is disposed on an upper surface of the first insulating layer, and a second insulating layer is disposed on an upper surface of the conductive layer; the combined sensor also comprises a first metal wire, a second metal wire, a third metal wire and a fourth metal wire, wherein the first metal wire, the second metal wire, the third metal wire and the fourth metal wire penetrate through the upper surface and the lower surface of the second insulating layer and are electrically abutted with the conductive layer; the environment sensing chip is attached to the upper surface of the second insulating layer and is electrically connected to the first metal wiring; the microphone chip is attached to the upper surface of the second insulating layer and is electrically connected to the second metal wire; the first integrated circuit chip is attached to the upper surface of the second insulating layer and is electrically connected to the third metal routing; the second integrated circuit chip is attached to the upper surface of the second insulating layer and is electrically connected to the fourth metal routing.
Optionally, a pad structure is further disposed on the upper surface of the substrate, the combination sensor further includes a fifth metal trace and a sixth metal trace, the fifth metal trace and the sixth metal trace both sequentially penetrate through the first insulating layer and the second insulating layer and are electrically abutted to the pad structure, an end of the fifth metal trace departing from the pad structure is electrically connected to the first integrated circuit chip, and an end of the sixth metal trace departing from the pad structure is electrically connected to the second integrated circuit chip; the lower surface of the substrate is also provided with exposure holes corresponding to the pad structures so as to expose the pad structures.
Optionally, the pad structure is disposed corresponding to the first integrated circuit chip and the second integrated circuit chip.
The invention also provides a manufacturing method of the combined sensor, which comprises the following steps:
providing a substrate and a cover plate;
manufacturing an environment sensor and an acoustic sensor on the upper surface of the substrate, wherein the environment sensor comprises an environment sensing chip and a first integrated circuit chip electrically connected with the environment sensing chip, and the acoustic sensor comprises a microphone chip and a second integrated circuit chip electrically connected with the microphone chip;
and connecting the cover plate to the substrate in a bonding manner to form a packaging body with an accommodating cavity in an enclosing manner, wherein the environment sensor and the acoustic sensor are both positioned in the accommodating cavity.
Optionally, before the step of fabricating the environmental sensor and the acoustic sensor on the upper surface of the substrate, the method includes:
manufacturing a first electrode layer on the upper surface of the substrate;
manufacturing a first bonding structure on the upper surface of the first electrode layer;
manufacturing a second electrode layer on the lower surface of the cover plate, and manufacturing a second bonding structure on the lower surface of the second electrode layer;
the step of bonding the cover plate to the base plate includes:
and aligning the first bonding structure of the substrate to the second bonding structure of the cover plate, and performing bonding packaging.
Optionally, after the step of fabricating the first electrode layer on the upper surface of the substrate, the method further includes:
depositing a first insulating layer on the upper surface of the first electrode layer, and manufacturing a conducting layer on the upper surface of the first insulating layer;
depositing a second insulating layer on the upper surface of the conducting layer, and corroding the second insulating layer to obtain a first wire passing hole, a second wire passing hole, a third wire passing hole and a fourth wire passing hole exposing the conducting layer;
electroplating a first metal wire, a second metal wire, a third metal wire and a fourth metal wire in the first wire hole, the second wire hole, the third wire hole and the fourth wire hole respectively;
in the step of fabricating an environmental sensor and an acoustic sensor on the upper surface of the substrate, the method includes:
respectively attaching the environment sensing chip, the microphone chip, the first integrated circuit chip and the second integrated circuit chip to the upper surface of the second insulating layer, electrically connecting the environment sensing chip and the first metal wiring through a wire, electrically connecting the microphone chip and the second metal wiring through a wire, and electrically connecting the first integrated circuit chip and the third metal wiring; and electrically connecting the second integrated circuit chip with the fourth metal wire.
Optionally, after the step of depositing a first insulating layer on the upper surface of the first electrode layer and fabricating a conductive layer on the upper surface of the first insulating layer, the method further includes:
an electroplating area exposing the first electrode layer is formed on the upper surface of the first insulating layer;
manufacturing a photoresist structure on the upper surface of the first insulating layer, wherein the photoresist structure is provided with a photoetching hole, and the photoetching hole corresponds to and is communicated with the electroplating area;
the step of fabricating a first bonding structure on the upper surface of the first electrode layer comprises:
and manufacturing a first bonding structure in the electroplating area and the photoetching hole, and removing the insulating glue layer on the inner side of the first bonding structure.
Optionally, after the step of fabricating the first electrode layer on the upper surface of the substrate, the method further includes:
manufacturing a pad structure on the upper surface of the substrate;
etching the lower surface of the substrate corresponding to the pad structure to expose the pad structure;
depositing a second insulating layer on the upper surface of the conductive layer, and etching the second insulating layer to obtain a first wire passing hole, a second wire passing hole, a third wire passing hole and a fourth wire passing hole exposing the conductive layer, and further comprising:
etching the upper surface of the second insulating layer to obtain a fifth wiring hole and a sixth wiring hole which penetrate through the first insulating layer and expose the pad structure;
manufacturing a fifth metal wire and a sixth metal wire in the fifth wire hole and the sixth wire hole respectively;
in the step of fabricating an environmental sensor and an acoustic sensor on the upper surface of the substrate, the method further includes:
electrically connecting the first integrated circuit chip with the fifth metal wire; and electrically connecting the second integrated circuit chip with the sixth metal wire.
Optionally, the accommodating cavity includes a first sub-accommodating cavity, a second sub-accommodating cavity, a third sub-accommodating cavity and a fourth sub-accommodating cavity which are independent of each other;
in the step of fabricating an environmental sensor and an acoustic sensor on the upper surface of the substrate, the method includes:
and the substrate is respectively provided with a surface mounting environment sensing chip, a microphone chip, a first integrated circuit chip and a second integrated circuit chip which are positioned in the first sub-containing cavity, the second sub-containing cavity, the third sub-containing cavity and the fourth sub-containing cavity.
Optionally, the environmental sensor is an air pressure sensor, and after the step of bonding and connecting the cover plate to the substrate, the method further includes:
and a first through hole and a second through hole are formed in the surface of the cover plate, the first through hole is communicated with the first sub-accommodating cavity, and the second through hole is communicated with the second sub-accommodating cavity.
The invention also proposes an electronic device comprising a combination sensor comprising: the packaging body comprises a substrate and a cover plate, wherein the substrate and the cover plate are in bonding connection through a bonding structure and enclose to form an accommodating cavity; the environment sensor comprises an environment sensing chip and a first integrated circuit chip which is electrically connected with the environment sensing chip, and the environment sensing chip and the first integrated circuit chip are both arranged in the accommodating cavity; and the acoustic sensor comprises a microphone chip and a second integrated circuit chip electrically connected with the microphone chip, and the microphone chip and the second integrated circuit chip are arranged in the accommodating cavity.
According to the technical scheme, the environmental sensor and the acoustic sensor are integrated on the chip, the chip is attached to the surface of the substrate, the chip is electrically connected, the cover plate is bonded and connected to the substrate through the bonding structure, a packaging body with an accommodating cavity is formed in a surrounding mode, and the integrated environmental sensor and the integrated acoustic sensor are arranged in the accommodating cavity. The packaging body is equivalent to the shell, so that the shell can be omitted, the thickness of the combined sensor can be further reduced, and the miniaturization of the combined sensor can be realized. Meanwhile, the influence of external signals on the environment sensor and the acoustic sensor is reduced, the introduction of noise is reduced, and the power consumption is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic diagram of the internal structure of an embodiment of the combinational sensor of the present invention;
FIG. 2 is a schematic cross-sectional view of a combi sensor;
FIG. 3 is a schematic view of a perspective structure of the combinational sensor;
FIG. 4 is a schematic view of a combined sensor from another perspective;
FIG. 5 is a flowchart illustrating steps of a method for fabricating a combinational sensor according to an embodiment of the present invention;
FIG. 6 is a flowchart illustrating an embodiment of step S10 in FIG. 5;
FIG. 7 is a schematic flow chart illustrating steps of another embodiment of a method for fabricating the combi sensor of FIG. 5;
FIG. 8 is a flowchart illustrating another embodiment of step S10 in FIG. 5;
FIG. 9 is a schematic flow chart illustrating steps of another embodiment of a method for fabricating the combi sensor of FIG. 5;
fig. 10 is a schematic structural diagram after step S13 in fig. 6;
FIG. 11 is a schematic diagram of the middle structure of step S11 in FIG. 7;
fig. 12 is a schematic structural diagram after step S11 in fig. 7;
fig. 13 is a schematic structural diagram after step S111 in fig. 7;
fig. 14 is a schematic structural diagram after step S115 in fig. 8;
fig. 15 is a schematic structural diagram after step S12a in fig. 8.
Fig. 16 is a schematic structural diagram after step S112a in fig. 9;
fig. 17 is a schematic structural diagram after step S113 and step S112b in fig. 9;
fig. 18 is a schematic structural diagram after step S22 in fig. 9.
The reference numbers illustrate:
the implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, the descriptions related to "first", "second", etc. in the present invention are only for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "connected," "secured," and the like are to be construed broadly, and for example, "secured" may be a fixed connection, a removable connection, or an integral part; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In addition, the technical solutions in the embodiments of the present invention may be combined with each other, but it must be based on the realization of those skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination of technical solutions should not be considered to exist, and is not within the protection scope of the present invention.
The present invention provides a combinational sensor 100.
Referring to fig. 1 to 4, in an embodiment of the combination sensor 100 of the present invention, the combination sensor 100 includes: the packaging structure comprises a packaging body 10, wherein the packaging body 10 comprises a substrate 12 and a cover plate 19, and the cover plate 19 is in bonding connection with the substrate 12 through a bonding structure and encloses to form an accommodating cavity 11; the environment sensor 30, the environment sensor 30 includes an environment sensing chip 31 and a first integrated circuit chip 32 electrically connected to the environment sensing chip 31, and the environment sensing chip 31 and the first integrated circuit chip 32 are both disposed in the accommodating cavity 11; and the acoustic sensor 40, the acoustic sensor 40 includes a microphone chip 41 and a second integrated circuit chip 42 electrically connected to the microphone chip 41, and the microphone chip 41 and the second integrated circuit chip 42 are both disposed in the accommodating cavity 11.
Specifically, the substrate 12 and the cover plate 19 are made of an insulating material, such as the silicon substrate 12; the two are connected in a bonding structure, wherein the bonding structure can be a gold-tin bonding structure, and the two are bonded and connected to form the accommodating cavity 11. The environmental sensor 30 and the acoustic sensor 40 are integrated on a chip, and are electrically connected in the chip, so that the influence of external signals on the environmental sensor 30 and the acoustic sensor 40 is reduced, the introduction of noise is reduced, and the power consumption is reduced. And the integrated environmental sensor 30 and acoustic sensor 40 are attached to the upper surface of the substrate 12 and are both disposed in the accommodating cavity 11, so that the arrangement of the housing can be omitted, which is beneficial to further reducing the thickness of the combined sensor 100, thereby realizing miniaturization thereof. Here, the environment sensing chip 31 and the microphone chip 41 are MEMS chips, wherein the environment sensor 30 may be an air pressure sensor, a temperature sensor, a humidity sensor or an optical sensor, the corresponding environment sensing chip 31 may be an air pressure sensing chip, a temperature sensing chip, a humidity sensing chip or an optical sensing chip for sensing various parameter changes of the external environment, and a first integrated circuit (ASIC) chip is used for processing a signal output by the environment sensing chip 31, so that the environment sensor 30 has a function of detecting changes of the external environment. The microphone chip 41 of the acoustic sensor 40 is typically made of monocrystalline silicon, polycrystalline silicon, or other silicon nitride materials, and is used for sensing and detecting a sound source, and converting a sound signal into an electrical signal for transmission, and the second integrated circuit chip 42 is used for processing a signal output by the microphone chip 41 and providing a voltage for the microphone chip 41, so that the acoustic sensor 40 provides an acoustic function for the electronic device.
It should be noted that an insulating glue layer is disposed on the periphery of the first bonding structure 123 and the second bonding structure 194 to shield external electromagnetic interference. The positions of the environment sensor chip 31, the microphone chip 41, the first integrated circuit chip 32, and the second integrated circuit chip 42 can be as shown in fig. 1, but naturally, the positions of the environment sensor chip, the microphone chip, and the first integrated circuit chip 32 can be interchanged, or other arrangements can be adopted, and all of them are within the scope of the present invention.
Therefore, it can be understood that, according to the technical solution of the present invention, the environmental sensor 30 and the acoustic sensor 40 are integrated on a chip, the chip is attached to the surface of the substrate 12, and the electrical connection is realized in the chip, after the cover plate 19 is bonded and connected to the substrate 12 by using a bonding structure, the package 10 having the accommodating cavity 11 is enclosed, and the integrated environmental sensor 30 and the acoustic sensor 40 are both disposed in the accommodating cavity 11. Here, the package 10 functions as a housing, so that the provision of the housing can be omitted, which is advantageous for further reducing the thickness of the combination sensor 100 and realizing miniaturization thereof. Meanwhile, the influence of external signals on the environmental sensor 30 and the acoustic sensor 40 is reduced, noise introduction is reduced, and power consumption is reduced.
It should be noted that, while the conventional combi-sensor 100 has a housing, the thickness thereof is generally 1mm or more, the thickness of the combi-sensor 100 of the present invention can be controlled within 0.8mm without providing a housing, and thus the thickness of the combi-sensor 100 of the present invention can be effectively reduced.
In an embodiment of the present invention, the accommodating cavity 11 includes an accommodating cavity 111, a second sub-accommodating cavity 112, a third sub-accommodating cavity 113, and a fourth sub-accommodating cavity 114 that are independent of each other, the environment sensing chip 31 is disposed in the accommodating cavity 111, the microphone chip 41 is disposed in the second sub-accommodating cavity 112, the first integrated circuit chip 32 is disposed in the third sub-accommodating cavity 113, and the second integrated circuit chip 42 is disposed in the fourth sub-accommodating cavity 114.
Here, the environmental sensor chip 31, the microphone chip 41, the first integrated circuit chip 32 and the second integrated circuit chip 42 are arranged in a partitioned manner and are respectively arranged in the independent accommodating cavities 11, so that the effects of isolation and shielding can be achieved, the electromagnetic interference between the environmental sensor 30 and the acoustic sensor 40 is reduced, and the introduction of noise is reduced.
In an embodiment of the present invention, the environmental sensor 30 is an air pressure sensor, and the cover plate 19 further has a first through hole 191 communicating with the accommodating cavity 111. Here, the environmental sensor 30 is an air pressure sensor, and correspondingly, the environmental sensor chip 31 is an MEMS air pressure chip, and the air pressure sensor is mainly described as an example below. The first through hole 191 is mainly used to sense the air pressure change of the external environment.
Further, the cover plate 19 is further opened with a second through hole 192 communicating with the second sub-cavity. Here, the second through hole 192 is mainly used to sense and detect an external sound source.
Referring to fig. 2 again, the thickness direction of the substrate 12 is defined as the up-down direction, the direction toward the cover plate 19 is the up direction, and the direction away from the cover plate 19 is the down direction.
In an embodiment of the present invention, the upper surface of the substrate 12 is provided with a first electrode layer 121, and the upper surface of the first electrode layer 121 is provided with a first bonding structure 123; the lower surface of the cover plate 19 is provided with a second electrode layer 193, and the lower surface of the second electrode layer 193 is provided with a second bonding structure 194 corresponding to the first bonding structure 123; the first bonding structure 123 is bonded to the second bonding structure 194, and encloses the accommodating cavity 11 together with the substrate 12 and the cover plate 19.
Here, the first electrode layer 121 and the second electrode layer 193 are both made of a metal layer, such as a copper layer, and the first electrode layer 121 and the second electrode layer 193 are disposed opposite to each other. The first bonding structure 123 and the second bonding structure 194 are disposed opposite to each other, one of the two bonding structures may be a gold bonding structure, and the other bonding structure is a tin bonding structure, so that the package 10 can be obtained by the cover plate 19 and the substrate 12 through the gold-tin bonding structure, and the first bonding structure 123, the second bonding structure 194, the substrate 12 and the cover plate 19 enclose to form an accommodating cavity 11 for accommodating the environmental sensor 30 and the acoustic sensor 40.
It should be noted that the thickness of the first bonding structure 123 is generally controlled to be in the range of 0.4mm-0.6mm, which can be beneficial to reduce the overall thickness of the combinational sensor 100.
Further, in an embodiment of the invention, a first insulating layer 124 is further disposed on an upper surface of the first electrode layer 121, a conductive layer 125 is disposed on an upper surface of the first insulating layer 124, and a second insulating layer 126 is disposed on an upper surface of the conductive layer 125; the combined sensor 100 further includes a first metal trace 13, a second metal trace 14, a third metal trace 15 and a fourth metal trace 16, where the first metal trace 13, the second metal trace 14, the third metal trace 15 and the fourth metal trace 16 all penetrate through the upper and lower surfaces of the second insulating layer 126 and are all electrically connected to the conductive layer 125; the environmental sensing chip 31 is attached to the upper surface of the second insulating layer 126 and electrically connected to the first metal trace 13; the microphone chip 41 is attached to the upper surface of the second insulating layer 126 and electrically connected to the second metal trace 14; the first ic chip 32 is attached to the upper surface of the second insulating layer 126 and electrically connected to the third metal trace 15; the second ic chip 42 is attached to the upper surface of the second insulating layer 126 and electrically connected to the fourth metal trace 16.
Specifically, the first insulating layer 124 and the second insulating layer 126 can be made of silicon material, and the conductive layer 125 is usually made of copper layer. The upper surface of the second insulating layer 126 is provided with a first wire running hole 1261, a second wire running hole 1262, a third wire running hole 1263 and a fourth wire running hole 1264 which run through the lower surface and expose the conductive layer 125, each wire running hole is correspondingly provided with a first metal wire 13, a second metal wire 14, a third metal wire 15 and a fourth metal wire 16, so that the lower end of each metal wire is electrically abutted to the conductive layer 125, and the upper end of each metal wire is exposed on the upper surface of the second insulating layer 126. The environmental sensing chip 31 is mounted on the upper surface of the second insulating layer 126 by chip glue, and is electrically connected to the first metal trace 13 by a wire; the microphone chip 41 is mounted on the upper surface of the second insulating layer 126 by chip adhesive, and is electrically connected to the second metal trace 14 by a wire; the first ic chip 32 is attached to the upper surface of the second insulating layer 126, and the lead at the bottom thereof is electrically connected to the third metal trace 15; the second ic chip 42 is attached to the upper surface of the second insulating layer 126, and the bottom lead thereof is electrically connected to the fourth metal trace 16. Therefore, the environmental sensor 30 and the acoustic sensor 40 can be assembled, and the chips in the combined sensor 100 are electrically connected through the metal wires below, so that the wires are regularly arranged, the mutual interference is avoided, and the safety is ensured. In addition, each chip is separately distributed in a subarea way, so that through holes do not need to be arranged for wiring, and the electromagnetic interference between the chips is effectively avoided.
It is understood that there are generally two conductive layers 125, one conductive layer 125 is correspondingly disposed below the environment sensing chip 31 and the first integrated circuit chip 32, and is electrically connected to the environment sensing chip 31 and the first integrated circuit chip 32 through metal traces; the other conductive layer 125 is correspondingly disposed below the microphone chip 41 and the second integrated circuit chip 42, and is electrically connected to the microphone chip 41 and the second integrated circuit chip 42 through metal traces. Therefore, the electrical connection can be more effectively realized, the length of the connecting wire is shorter, and the setting operation of the metal wiring is more convenient.
Further, the upper surface of the substrate 12 is further provided with a pad structure 122, the combinational sensor 100 further includes a fifth metal trace 17 and a sixth metal trace 18, the fifth metal trace 17 and the sixth metal trace 18 sequentially penetrate through the first insulating layer 124 and the second insulating layer 126 and are electrically abutted to the pad structure 122, an end of the fifth metal trace 17 away from the pad structure 122 is electrically connected to the first integrated circuit chip 32, and an end of the sixth metal trace 18 away from the pad structure 122 is electrically connected to the second integrated circuit chip 42; the lower surface of the substrate 12 corresponding to the pad structure 122 is further opened with an exposing hole to expose the pad structure 122.
Specifically, the pad structure 122 is generally made of a copper material, the second insulating layer 126 has a fifth wire hole 1265 and a sixth wire hole 1266 corresponding to the upper surface of the pad structure 122, and the fifth wire hole 1265 and the sixth wire hole 1266 both penetrate through the first insulating layer 124 and both expose the pad structure 122. The fifth metal trace 17 and the sixth metal trace 18 are disposed in the fifth wire hole 1265 and the sixth wire hole 1266, lower ends of the fifth metal trace 17 and the sixth metal trace 18 are electrically connected to the pad structure 122, upper ends of the fifth metal trace 17 and the sixth metal trace 18 are exposed on an upper surface of the second insulating layer 126, and leads electrically connected to bottoms of the first integrated circuit chip 32 and the second integrated circuit chip 42 are disposed in a distributed manner. Correspondingly, the lower surface of the substrate 12 is provided with exposure holes corresponding to the pad structure 122 structure, so that the pad structure 122 is exposed, charges carried by static electricity can be quickly conducted away through the pad structure 122, and the antistatic capability of the combination sensor 100 is effectively improved.
Optionally, the pad structure 122 is disposed corresponding to the first integrated circuit chip 32 and the second integrated circuit chip 42.
Here, the pad structure 122 is correspondingly disposed below the first integrated circuit chip 32 and the second integrated circuit chip 42, so that the charges carried by static electricity can be more quickly led out of the outside, and the antistatic capability of the combinational sensor 100 is more effectively improved; meanwhile, the length of the metal wiring is short, and the setting operation of the metal wiring is convenient.
Referring to fig. 5, in an embodiment of the method for manufacturing the combinational sensor 100 of the present invention, the method for manufacturing the combinational sensor 100 includes the following steps:
step S10, providing the base plate 12 and the cover plate 19;
step S20, fabricating an environmental sensor 30 and an acoustic sensor 40 on the upper surface of the substrate 12, where the environmental sensor 30 includes an environmental sensor chip 31 and a first integrated circuit chip 32 electrically connected to the environmental sensor chip 31, and the acoustic sensor 40 includes a microphone chip 41 and a second integrated circuit chip 42 electrically connected to the microphone chip 41;
step S30, bonding the cover plate 19 to the base plate 12 to form a receiving cavity 11, where the environmental sensor 30 and the acoustic sensor 40 are both located in the receiving cavity 11.
Specifically, the package 10 having the accommodating cavity 11 is first manufactured by a packaging method, which generally adopts a gold-tin bonding packaging method, but of course, other reasonable and effective packaging methods may also be adopted. And then the environment sensor 30 and the acoustic sensor 40 are manufactured in the accommodating cavity 11, when the environment sensor 30 and the acoustic sensor 40 are manufactured, the environment sensor 30 and the acoustic sensor 40 are integrated on a chip, and the chip is electrically connected, so that the influence of external signals on the environment sensor 30 and the acoustic sensor 40 can be reduced, the introduction of noise is reduced, and the power consumption is reduced. Since the integrated environmental sensor 30 and the acoustic sensor 40 are both located in the accommodating cavity 11 of the package 10, the fabrication of the housing can be omitted, which is beneficial to further reducing the thickness of the combined sensor 100 and realizing the miniaturization thereof.
Referring to fig. 6, fig. 2, and fig. 10 to fig. 15, in an embodiment of the present invention, before the step S20, the method further includes:
step S11, forming a first electrode layer 121 on the upper surface of the substrate 12;
step S12, forming a first bonding structure 123 on the upper surface of the first electrode layer 121;
step S13, forming a second electrode layer 193 on the lower surface of the cover plate 19, and forming a second bonding structure 194 on the lower surface of the second electrode layer 193;
accordingly, step S30 includes
Step S30a, aligning the first bonding structure 123 of the substrate 12 with the second bonding structure 194 of the cover plate 19, and performing bonding packaging to obtain the package 10.
Specifically, the substrate 12 and the cover plate 19 may be formed of the silicon substrate 12, and the first electrode layer 121 and the second electrode layer 193 may be formed of copper layers opposite to each other. During manufacturing, a copper layer is deposited on the upper surface of the substrate 12, a dielectric material layer is pressed on the upper surface of the copper layer, the dielectric material layer is an insulating layer, then, a part of the dielectric material layer is removed by etching through a light etching process, the copper layer is etched, and then, the dielectric material layer is removed, so that the first electrode layer 121 is obtained. A second electrode layer 193 is formed on the lower surface of the cover plate 19 in the same manner. The first bonding structure 123 and the second bonding structure are disposed correspondingly, one of the two bonding structures is a gold bonding structure, and the other of the two bonding structures is a tin bonding structure. Finally, aligning the first bonding structure 123 with the second bonding structure 194, and adhesively bonding the first bonding structure 123 and the second bonding structure 194 together by pressing and heating, thereby obtaining the package 10. It is understood that, after the fabrication, the first bonding structure 123, the second bonding structure 194, the substrate 12 and the cover plate 19 are enclosed to form the receiving cavity 11 of the package 10.
Referring to fig. 7 and 13, after step S11, the method further includes:
step S111, depositing a first insulating layer 124 on the upper surface of the first electrode layer 121, and forming a conductive layer 125 on the upper surface of the first insulating layer 124;
step S112, depositing a second insulating layer 126 on the upper surface of the conductive layer 125, and etching the second insulating layer 126 to obtain a first wire hole, a second wire hole 1262, a third wire hole 1263, and a fourth wire hole 1264 exposing the conductive layer 125;
step S113, respectively electroplating a first metal wire 13, a second metal wire 14, a third metal wire 15 and a fourth metal wire 16 in the first wire hole 1261, the second wire hole 1262, the third wire hole 1263 and the fourth wire hole 1264;
accordingly, referring to fig. 18, step S20 includes:
step S21, respectively attaching the environment sensing chip 31, the microphone chip 41, the first integrated circuit chip 32, and the second integrated circuit chip 42 to the upper surface of the second insulating layer 126, electrically connecting the environment sensing chip 31 and the first metal trace 13 through a wire, electrically connecting the microphone chip 41 and the second metal trace 14 through a wire, and electrically connecting the first integrated circuit chip 32 and the third metal trace 15; electrically connecting the second integrated circuit chip 42 and the fourth metal trace 16.
Here, the first insulating layer 124 and the second insulating layer 126 may be made of silicon-based materials, the conductive layer 125 may be made of copper, and the first wire hole, the second wire hole 1262, the third wire hole 1263 and the fourth wire hole 1264 are formed by etching the second insulating layer 126 by using a photo etching process, and the underlying conductive layer 125 is exposed. The first metal trace 13, the second metal trace 14, the third metal trace 15 and the fourth metal trace 16 may be made of copper or tin, and the lower ends thereof are electrically abutted to the lower conductive layer 125, and the upper ends thereof are exposed on the upper surface of the second insulating layer 126 for electrically connecting the air pressure sensor and the microphone sensor. When the environmental sensor 30 and the acoustic sensor 40 are manufactured, the lower surfaces of the environmental sensor chip 31 and the microphone chip 41 are subjected to dispensing operation to manufacture chip glue, then the environmental sensor chip 31 is attached to the upper surface of the second insulating layer 126 by adopting a mounting process, a WB wire bonding process is performed, and the environmental sensor chip 31 is electrically connected to the upper end of the first metal wire 13 through a wire; attaching the microphone chip 41 to the upper surface of the second insulating layer 126 by the same method, and electrically connecting the microphone chip 41 to the upper end of the second metal trace 14 through a wire; then, the first integrated circuit chip 32 and the second integrated circuit chip 42 are mounted on the upper surface of the second insulating layer 126 corresponding to the third metal trace 15 and the fourth metal trace 16, and heat treatment is performed, so that the electrical conduction between the first integrated circuit chip 32 and the second integrated circuit chip 42 and the third metal trace 15 and the fourth metal trace 16 can be realized. Therefore, the mounting operation of the environmental sensor 30 and the acoustic sensor 40 can be completed, and the chips in the combined sensor 100 are electrically connected through the following metal wires, so that the wires are regularly arranged, the interference between the wires is avoided, and the safety of the combined sensor is ensured. In addition, each chip is separately distributed in a subarea way, so that through holes do not need to be arranged for wiring, and the electromagnetic interference between the chips is effectively avoided.
Further, referring to fig. 8 and 14, after step S111, the method further includes:
step S114, forming a plating region 1241 exposing the first electrode layer 121 on the upper surface of the first insulating layer 124;
in step S115, a photoresist structure 127 is formed on the upper surface of the first insulating layer 124, wherein the photoresist structure 127 is provided with a photolithography hole 1271, and the photolithography hole 1271 corresponds to and communicates with the plating region 1241.
Accordingly, step S12 includes:
step S12a, a first bonding structure 123 is formed in the plating region 1241 and the photolithography aperture 1271, and the insulating layer on the inner side of the first bonding structure 123 is removed.
Specifically, the first insulating layer 124 is etched by a photolithography process, so as to obtain a plating region 1241 exposing the first electrode layer 121. And (3) uniformly coating a photoresist layer on the upper surface of the first insulating layer 124 to serve as a protection region of the non-electroplating first bonding structure 123 region, and photoetching the photoresist layer by adopting an alignment process to obtain a photoresist structure 127 with a photoetching hole 1271, wherein the photoetching hole 1271 corresponds to and is communicated with the electroplating region 1241 below. After the gold (or tin) is electroplated in the photo-etching hole 1271 and the electroplating region 1241, and the photoresist structure 127 on the inner side is removed, the first bonding structure 123 and the photoresist on the outer side can be manufactured, and the photoresist mainly plays a role in shielding external interference.
It should be noted that the thickness of the photoresist structure 127 is generally controlled within a range of 0.5mm to 0.8mm, which can be beneficial to reduce the overall thickness of the combi sensor 100.
Further, referring to fig. 9, 11 to 18, after step S11, the method further includes:
in step S11a, a pad structure 122 is formed on the upper surface of the substrate 12.
In step S11b, etching is performed on the lower surface of the substrate 12 corresponding to the pad structure 122 to expose the pad structure 122.
Specifically, the manufacturing method of the pad structure 122 may refer to the manufacturing method of the first electrode layer 121, that is, a copper layer is deposited on the upper surface of the substrate 12, a dielectric material layer is pressed on the upper surface of the copper layer, the dielectric material layer is an insulating layer, then, a portion of the dielectric material layer is removed by etching through a light etching process, the copper layer is etched, and then, the dielectric material layer is removed, so that the first electrode layer 121 and the pad structure 122 can be obtained at the same time. Then, the lower surface of the substrate 12 is etched by using a photolithography process, and an external bonding pad region exposing the bonding pad structure 122 is etched for connecting external parts.
Correspondingly, referring to fig. 9, fig. 16 to fig. 18, after step S112, the method further includes:
step S112a, etching the upper surface of the second insulating layer 126 to obtain a fifth wire hole 1265 and a sixth wire hole 1266 penetrating through the first insulating layer 124 and exposing the pad structure 122;
in step S112b, a fifth metal wire 17 and a sixth metal wire 18 are respectively manufactured in the fifth wire hole 1265 and the sixth wire hole 1266.
Specifically, the upper surface of the second insulating layer 126 is etched by using a photolithography process, so as to obtain a fifth wire hole 1265 and a sixth wire hole 1266 penetrating through the first insulating layer 124 and exposing the pad structure 122, and then metal is plated in the fifth wire hole 1265 and the sixth wire hole 1266, so as to obtain a fifth metal wire 17 and a sixth metal wire 18, respectively. It can be understood that the fifth metal trace 17 and the sixth metal trace 18 are disposed corresponding to the first integrated circuit chip 32 and the second integrated circuit chip 42, and both penetrate through the first insulating layer 124 and the second insulating layer 126, and both lower ends thereof electrically abut against the pad structure 122, and upper ends thereof are exposed on the upper surface of the second insulating layer 126 for electrically connecting the first integrated circuit chip 32 and the second integrated circuit chip 42.
Correspondingly, after step S21, the method further includes:
step S22, electrically connecting the first ic chip 32 and the fifth metal trace 17; electrically connecting the second integrated circuit chip 42 and the sixth metal trace 18.
After the first ic chip 32 and the second ic chip 42 are mounted and heat treatment is performed, the upper ends of the fifth metal trace 17 and the sixth metal trace 18 are electrically connected to the first ic chip 32 and the second ic chip 42, respectively. Thus, the charges carried by the static electricity can be quickly conducted away through the pad structure 122, and the antistatic capability of the combinational sensor 100 is effectively improved.
Further, in an embodiment of the present invention, the accommodating cavity 11 includes an accommodating cavity 111, a second sub-accommodating cavity 112, a third sub-accommodating cavity 113, and a fourth sub-accommodating cavity 114 that are independent from each other; step S20 includes:
the environment sensing chip 31, the microphone chip 41, the first integrated circuit chip 32 and the second integrated circuit chip 42 are respectively attached to the accommodating cavity 111, the second sub-accommodating cavity 112, the third sub-accommodating cavity 113 and the fourth sub-accommodating cavity 114.
When the package 10 is manufactured, the first bonding structure 123, the second bonding structure 194, the substrate 12 and the cover plate 19 together enclose to form an accommodating cavity 111, a second sub-accommodating cavity 112, a third sub-accommodating cavity 113 and a fourth sub-accommodating cavity 114, which are independent of each other. The environment sensing chip 31, the microphone chip 41, the first integrated circuit chip 32 and the second integrated circuit chip 42 are arranged in a partitioning mode and are respectively arranged in the independent accommodating cavities 11, so that the effects of isolation and shielding can be achieved, electromagnetic interference between the environment sensor 30 and the acoustic sensor 40 is reduced, and introduction of noise is reduced.
Further, in an embodiment of the present invention, the environmental sensor 30 is an air pressure sensor, and after the step S20, the method further includes:
a first through hole 191 and a second through hole 192 are formed in the surface of the package body 10, the first through hole 191 is communicated with the accommodating cavity 111, and the second through hole 192 is communicated with the second sub-accommodating cavity 112.
The first through hole 191 is mainly formed at the top of the package body 10 and is communicated with the accommodating cavity 111 for sensing the air pressure change of the external environment. The second through hole 192 is generally opened at the top of the package body 10 and is communicated with the second sub-cavity for sensing and detecting an external sound source.
The present invention also proposes an electronic device, which includes the combination sensor 100 as described above, and the specific structure of the combination sensor 100 refers to the foregoing embodiments. Since all technical solutions of all the foregoing embodiments are adopted, at least all beneficial effects brought by the technical solutions of the foregoing embodiments are achieved, and no further description is given here.
It should be noted that the electronic device is generally a mobile phone, a watch, an earphone, a bracelet, and the like, and the combination sensor 100 is generally installed in a housing of the electronic device, so that the electronic device can realize more functions.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (15)
1. A combination sensor, comprising:
the packaging body comprises a substrate and a cover plate, wherein the substrate and the cover plate are in bonding connection through a bonding structure and enclose to form an accommodating cavity;
the environment sensor comprises an environment sensing chip and a first integrated circuit chip which is electrically connected with the environment sensing chip, and the environment sensing chip and the first integrated circuit chip are both arranged in the accommodating cavity; and
the acoustic sensor comprises a microphone chip and a second integrated circuit chip electrically connected with the microphone chip, and the microphone chip and the second integrated circuit chip are arranged in the accommodating cavity.
2. The combination sensor of claim 1, wherein the receiving cavity comprises a first sub-receiving cavity, a second sub-receiving cavity, a third sub-receiving cavity and a fourth sub-receiving cavity, the environment sensing chip is disposed in the first sub-receiving cavity, the microphone chip is disposed in the second sub-receiving cavity, the first ic chip is disposed in the third sub-receiving cavity, and the second ic chip is disposed in the fourth sub-receiving cavity.
3. The combination sensor of claim 2, wherein the environmental sensor is an air pressure sensor, and the cover plate further defines a first through hole communicating with the first sub-receiving cavity;
and/or the cover plate is also provided with a second through hole communicated with the second sub-accommodating cavity.
4. A combination sensor according to any one of claims 1 to 3, wherein the thickness direction of the substrate is defined as an up-down direction, the direction toward the cover plate is an up direction, the direction away from the cover plate is a down direction, the upper surface of the substrate is provided with a first electrode layer, and the upper surface of the first electrode layer is provided with a first bonding structure;
a second electrode layer is arranged on the lower surface of the cover plate, and a second bonding structure corresponding to the first bonding structure is arranged on the lower surface of the second electrode layer;
the first bonding structure is bonded with the second bonding structure and surrounds the substrate and the cover plate together to form the accommodating cavity.
5. The combination sensor according to claim 4, wherein an upper surface of the first electrode layer is further provided with a first insulating layer, an upper surface of the first insulating layer is provided with a conductive layer, and an upper surface of the conductive layer is provided with a second insulating layer;
the combined sensor also comprises a first metal wire, a second metal wire, a third metal wire and a fourth metal wire, wherein the first metal wire, the second metal wire, the third metal wire and the fourth metal wire penetrate through the upper surface and the lower surface of the second insulating layer and are electrically abutted with the conductive layer;
the environment sensing chip is attached to the upper surface of the second insulating layer and is electrically connected to the first metal wiring;
the microphone chip is attached to the upper surface of the second insulating layer and is electrically connected to the second metal wire;
the first integrated circuit chip is attached to the upper surface of the second insulating layer and is electrically connected to the third metal routing;
the second integrated circuit chip is attached to the upper surface of the second insulating layer and is electrically connected to the fourth metal routing.
6. The combination sensor of claim 5, wherein the upper surface of the substrate is further provided with a pad structure, the combination sensor further comprises a fifth metal trace and a sixth metal trace, the fifth metal trace and the sixth metal trace both sequentially penetrate through the first insulating layer and the second insulating layer and are both electrically abutted against the pad structure, an end of the fifth metal trace away from the pad structure is electrically connected to the first integrated circuit chip, and an end of the sixth metal trace away from the pad structure is electrically connected to the second integrated circuit chip;
the lower surface of the substrate is also provided with exposure holes corresponding to the pad structures so as to expose the pad structures.
7. The combinational sensor of claim 6, wherein the pad structures are disposed corresponding to the first integrated circuit chip and the second integrated circuit chip.
8. A method for manufacturing a combined sensor is characterized by comprising the following steps:
providing a substrate and a cover plate;
manufacturing an environment sensor and an acoustic sensor on the upper surface of the substrate, wherein the environment sensor comprises an environment sensing chip and a first integrated circuit chip electrically connected with the environment sensing chip, and the acoustic sensor comprises a microphone chip and a second integrated circuit chip electrically connected with the microphone chip;
and connecting the cover plate to the substrate in a bonding manner to form a packaging body with an accommodating cavity in an enclosing manner, wherein the environment sensor and the acoustic sensor are both positioned in the accommodating cavity.
9. The method of fabricating a combi sensor according to claim 8, wherein the step of fabricating the environmental sensor and the acoustic sensor on the upper surface of the substrate is preceded by the steps of:
manufacturing a first electrode layer on the upper surface of the substrate;
manufacturing a first bonding structure on the upper surface of the first electrode layer;
manufacturing a second electrode layer on the lower surface of the cover plate, and manufacturing a second bonding structure on the lower surface of the second electrode layer;
the step of bonding the cover plate to the base plate includes:
and aligning the first bonding structure of the substrate to the second bonding structure of the cover plate, and performing bonding packaging.
10. The method of fabricating a combinational sensor according to claim 9, further comprising, after the step of fabricating the first electrode layer on the upper surface of the substrate:
depositing a first insulating layer on the upper surface of the first electrode layer, and manufacturing a conducting layer on the upper surface of the first insulating layer;
depositing a second insulating layer on the upper surface of the conducting layer, and corroding the second insulating layer to obtain a first wire passing hole, a second wire passing hole, a third wire passing hole and a fourth wire passing hole exposing the conducting layer;
electroplating a first metal wire, a second metal wire, a third metal wire and a fourth metal wire in the first wire hole, the second wire hole, the third wire hole and the fourth wire hole respectively;
in the step of fabricating an environmental sensor and an acoustic sensor on the upper surface of the substrate, the method includes:
respectively attaching the environment sensing chip, the microphone chip, the first integrated circuit chip and the second integrated circuit chip to the upper surface of the second insulating layer, electrically connecting the environment sensing chip and the first metal wiring through a wire, electrically connecting the microphone chip and the second metal wiring through a wire, and electrically connecting the first integrated circuit chip and the third metal wiring; and electrically connecting the second integrated circuit chip with the fourth metal wire.
11. The method of fabricating a combinational sensor according to claim 10, further comprising, after the steps of depositing a first insulating layer on the upper surface of the first electrode layer and fabricating a conductive layer on the upper surface of the first insulating layer:
an electroplating area exposing the first electrode layer is formed on the upper surface of the first insulating layer;
manufacturing a photoresist structure on the upper surface of the first insulating layer, wherein the photoresist structure is provided with a photoetching hole, and the photoetching hole corresponds to and is communicated with the electroplating area;
the step of fabricating a first bonding structure on the upper surface of the first electrode layer comprises:
and manufacturing a first bonding structure in the electroplating area and the photoetching hole, and removing the insulating glue layer on the inner side of the first bonding structure.
12. The method of fabricating a combinational sensor described in claim 10, further comprising, after the step of fabricating the first electrode layer on the upper surface of the substrate:
manufacturing a pad structure on the upper surface of the substrate;
etching the lower surface of the substrate corresponding to the pad structure to expose the pad structure;
depositing a second insulating layer on the upper surface of the conductive layer, and etching the second insulating layer to obtain a first wire passing hole, a second wire passing hole, a third wire passing hole and a fourth wire passing hole exposing the conductive layer, and further comprising:
etching the upper surface of the second insulating layer to obtain a fifth wiring hole and a sixth wiring hole which penetrate through the first insulating layer and expose the pad structure;
manufacturing a fifth metal wire and a sixth metal wire in the fifth wire hole and the sixth wire hole respectively;
in the step of fabricating an environmental sensor and an acoustic sensor on the upper surface of the substrate, the method further includes:
electrically connecting the first integrated circuit chip with the fifth metal wire; and electrically connecting the second integrated circuit chip with the sixth metal wire.
13. The method for manufacturing a combination sensor according to any one of claims 8 to 12, wherein the accommodating cavities comprise a first sub-accommodating cavity, a second sub-accommodating cavity, a third sub-accommodating cavity and a fourth sub-accommodating cavity which are independent of each other;
in the step of fabricating an environmental sensor and an acoustic sensor on the upper surface of the substrate, the method includes:
and the substrate is respectively provided with a surface mounting environment sensing chip, a microphone chip, a first integrated circuit chip and a second integrated circuit chip which are positioned in the first sub-containing cavity, the second sub-containing cavity, the third sub-containing cavity and the fourth sub-containing cavity.
14. The method of claim 13, wherein the environmental sensor is a gas pressure sensor, and wherein the step of bonding the cover plate to the base plate further comprises:
and a first through hole and a second through hole are formed in the surface of the cover plate, the first through hole is communicated with the first sub-accommodating cavity, and the second through hole is communicated with the second sub-accommodating cavity.
15. An electronic device characterized in that it comprises a combi-sensor according to any of claims 1 to 7.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010222767.4A CN111307366A (en) | 2020-03-25 | 2020-03-25 | Combined sensor, manufacturing method thereof and electronic device |
| PCT/CN2020/135386 WO2021189963A1 (en) | 2020-03-25 | 2020-12-10 | Combined sensor and manufacturing method therefor, and electronic device |
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| CN202010222767.4A CN111307366A (en) | 2020-03-25 | 2020-03-25 | Combined sensor, manufacturing method thereof and electronic device |
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| CN202010222767.4A Pending CN111307366A (en) | 2020-03-25 | 2020-03-25 | Combined sensor, manufacturing method thereof and electronic device |
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| WO (1) | WO2021189963A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111982392A (en) * | 2020-08-12 | 2020-11-24 | 青岛歌尔智能传感器有限公司 | Combined sensor, manufacturing method thereof and electronic device |
| CN112179409A (en) * | 2020-09-22 | 2021-01-05 | 青岛歌尔智能传感器有限公司 | Combined sensor, manufacturing method thereof and electronic device |
| WO2021189963A1 (en) * | 2020-03-25 | 2021-09-30 | 青岛歌尔智能传感器有限公司 | Combined sensor and manufacturing method therefor, and electronic device |
| WO2022000645A1 (en) * | 2020-06-30 | 2022-01-06 | 瑞声声学科技(深圳)有限公司 | Microphone |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9809448B2 (en) * | 2013-03-13 | 2017-11-07 | Invensense, Inc. | Systems and apparatus having MEMS acoustic sensors and other MEMS sensors and methods of fabrication of the same |
| US9617144B2 (en) * | 2014-05-09 | 2017-04-11 | Invensense, Inc. | Integrated package containing MEMS acoustic sensor and environmental sensor and methodology for fabricating same |
| US10351419B2 (en) * | 2016-05-20 | 2019-07-16 | Invensense, Inc. | Integrated package containing MEMS acoustic sensor and pressure sensor |
| CN106744647A (en) * | 2016-12-20 | 2017-05-31 | 苏州晶方半导体科技股份有限公司 | MEMS chip encapsulating structure and method for packing |
| CN207869502U (en) * | 2017-11-30 | 2018-09-14 | 广州兴森快捷电路科技有限公司 | Embedded components circuit board |
| CN109348389B (en) * | 2018-12-07 | 2024-05-24 | 歌尔微电子股份有限公司 | Combined sensor and electronic device |
| CN210183545U (en) * | 2019-08-02 | 2020-03-24 | 歌尔科技有限公司 | Combined sensor device |
| CN211504517U (en) * | 2020-03-25 | 2020-09-15 | 青岛歌尔智能传感器有限公司 | Combined sensor and electronic device |
| CN111307366A (en) * | 2020-03-25 | 2020-06-19 | 青岛歌尔智能传感器有限公司 | Combined sensor, manufacturing method thereof and electronic device |
-
2020
- 2020-03-25 CN CN202010222767.4A patent/CN111307366A/en active Pending
- 2020-12-10 WO PCT/CN2020/135386 patent/WO2021189963A1/en active Application Filing
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021189963A1 (en) * | 2020-03-25 | 2021-09-30 | 青岛歌尔智能传感器有限公司 | Combined sensor and manufacturing method therefor, and electronic device |
| WO2022000645A1 (en) * | 2020-06-30 | 2022-01-06 | 瑞声声学科技(深圳)有限公司 | Microphone |
| CN111982392A (en) * | 2020-08-12 | 2020-11-24 | 青岛歌尔智能传感器有限公司 | Combined sensor, manufacturing method thereof and electronic device |
| CN112179409A (en) * | 2020-09-22 | 2021-01-05 | 青岛歌尔智能传感器有限公司 | Combined sensor, manufacturing method thereof and electronic device |
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| WO2021189963A1 (en) | 2021-09-30 |
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