WO2021189963A1 - Combined sensor and manufacturing method therefor, and electronic device - Google Patents
Combined sensor and manufacturing method therefor, and electronic device Download PDFInfo
- Publication number
- WO2021189963A1 WO2021189963A1 PCT/CN2020/135386 CN2020135386W WO2021189963A1 WO 2021189963 A1 WO2021189963 A1 WO 2021189963A1 CN 2020135386 W CN2020135386 W CN 2020135386W WO 2021189963 A1 WO2021189963 A1 WO 2021189963A1
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- WIPO (PCT)
- Prior art keywords
- sensor
- chip
- integrated circuit
- accommodating cavity
- metal trace
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/148—Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
- H04R3/00—Circuits for transducers
Definitions
- This application relates to the field of sensor technology, and in particular to a combined sensor, a manufacturing method thereof, and electronic equipment.
- the main purpose of the present application is to provide a combined sensor, a manufacturing method thereof, and electronic equipment, aiming to effectively reduce the thickness of the combined sensor and realize the miniaturization of the combined sensor.
- the combined sensor proposed in the present application includes: a package body, the package body includes a substrate and a cover plate, the substrate and the cover plate are bonded and connected by a bonding structure, and are enclosed to form an accommodating cavity
- the environmental sensor includes an environmental sensor chip and a first integrated circuit chip electrically connected to the environmental sensor chip, the environmental sensor chip and the first integrated circuit chip are both set in the An accommodating cavity
- an acoustic sensor the acoustic sensor including a microphone chip and a second integrated circuit chip electrically connected to the microphone chip, the microphone chip and the second integrated circuit chip are both provided in the container ⁇ In the cavity.
- the accommodating cavity includes a first sub-accommodating cavity, a second sub-accommodating cavity, a third sub-accommodating cavity, and a fourth sub-accommodating cavity that are independent of each other, and the environmental sensor chip is provided with
- the first sub-accommodating cavity the microphone chip is arranged in the second sub-accommodating cavity
- the first integrated circuit chip is arranged in the third sub-accommodating cavity
- the second The integrated circuit chip is arranged in the fourth sub-accommodating cavity.
- the environmental sensor is an air pressure sensor
- the cover plate is further provided with a first through hole communicating with the first sub-accommodating cavity; and/or, the cover plate is also provided with a first through hole communicating with the The second through hole of the second sub-accommodating cavity.
- the thickness direction of the substrate is the up-down direction
- the direction facing the cover plate is the upward direction
- the direction away from the cover plate is the downward direction
- the upper surface of the substrate is provided with a first An electrode layer
- the upper surface of the first electrode layer is provided with a first bonding structure
- the lower surface of the cover plate is provided with a second electrode layer
- the lower surface of the second electrode layer is provided with the first bonding structure
- a second bonding structure corresponding to a bonding structure
- the first bonding structure is bonded to the second bonding structure, and is enclosed with the substrate and the cover plate to form the accommodation Cavity.
- the upper surface of the first electrode layer is further provided with a first insulating layer, the upper surface of the first insulating layer is provided with a conductive layer, and the upper surface of the conductive layer is provided with a second insulating layer
- the combined sensor also includes a first metal trace, a second metal trace, a third metal trace, and a fourth metal trace, the first metal trace, the second metal trace, the first metal trace
- the three metal traces and the fourth metal trace both penetrate the upper and lower surfaces of the second insulating layer, and both electrically abut the conductive layer;
- the environmental sensor chip is mounted on the second insulating layer
- the upper surface of the layer is electrically connected to the first metal trace;
- the microphone chip is mounted on the upper surface of the second insulating layer and is electrically connected to the second metal trace;
- the first integrated circuit chip is mounted on the upper surface of the second insulating layer and is electrically connected to the third metal trace;
- the second integrated circuit chip is mounted on the upper surface of the second insul
- the upper surface of the substrate is further provided with a pad structure
- the combined sensor further includes a fifth metal trace and a sixth metal trace, the fifth metal trace and the sixth metal trace
- the traces all penetrate the first insulating layer and the second insulation layer in sequence, and are electrically abutted with the pad structure, and the fifth metal trace is electrically away from the end of the pad structure.
- the end of the sixth metal trace away from the pad structure is electrically connected to the second integrated circuit chip; the lower surface of the substrate corresponds to the pad structure Exposure holes are also opened to expose the pad structure.
- the pad structure is arranged corresponding to the first integrated circuit chip and the second integrated circuit chip.
- This application also proposes a method for manufacturing a combined sensor, which includes the following steps:
- the environmental sensor includes an environmental sensor chip and a first integrated circuit chip electrically connected to the environmental sensor chip.
- the acoustic sensor includes a microphone chip and A second integrated circuit chip electrically connected to the microphone chip;
- the cover plate is connected to the substrate by bonding to form a package with a containing cavity, and the environmental sensor and the acoustic sensor are both located in the containing cavity.
- the method before the step of fabricating an environmental sensor and an acoustic sensor on the upper surface of the substrate, the method includes:
- the step of bonding the cover plate to the substrate includes:
- the method further includes:
- a second insulating layer is deposited on the upper surface of the conductive layer, and the second insulating layer is etched to obtain a first via hole, a second wire hole, a third wire hole, and a fourth wire hole that expose the conductive layer.
- the first metal trace, the second metal trace, and the third metal trace are electroplated in the first trace hole, the second trace hole, the third trace hole, and the fourth trace hole, respectively.
- the step of fabricating an environmental sensor and an acoustic sensor on the upper surface of the substrate includes:
- the environment sensor chip, the microphone chip, the first integrated circuit chip, and the second integrated circuit chip on the upper surface of the second insulating layer, and connect the environment sensor chip with
- the first metal trace is electrically connected through a wire
- the microphone chip and the second metal trace are electrically connected through a wire
- the first integrated circuit chip is electrically connected to the third metal trace.
- the method further includes:
- An electroplating area exposing the first electrode layer is opened on the upper surface of the first insulating layer;
- the photoresist structure is provided with a photoetching hole, and the photoetching hole corresponds to and communicates with the electroplating area;
- the step of fabricating a first bonding structure on the upper surface of the first electrode layer includes:
- a first bonding structure is fabricated in the electroplating area and the photoetching hole, and the insulating glue layer inside the first bonding structure is removed.
- the method further includes:
- a second insulating layer is deposited on the upper surface of the conductive layer, and the second insulating layer is etched to obtain a first via hole, a second wire hole, a third wire hole, and a fourth wire hole that expose the conductive layer. After the steps of routing holes, it also includes:
- the step of fabricating an environmental sensor and an acoustic sensor on the upper surface of the substrate further includes:
- the first integrated circuit chip is electrically connected with the fifth metal trace; the second integrated circuit chip is electrically connected with the sixth metal trace.
- the accommodating cavity includes a first sub-accommodating cavity, a second sub-accommodating cavity, a third sub-accommodating cavity, and a fourth sub-accommodating cavity that are independent of each other;
- the step of fabricating an environmental sensor and an acoustic sensor on the upper surface of the substrate includes:
- the environmental sensor is an air pressure sensor
- the method further includes:
- a first through hole and a second through hole are opened on the surface of the cover plate, the first through hole communicates with the first sub-accommodating cavity, and the second through hole communicates with the second sub-accommodating cavity.
- the application also proposes an electronic device.
- the electronic device includes a combined sensor.
- the combined sensor includes a package.
- the package includes a substrate and a cover.
- the substrate and the cover are bonded by a bonding structure.
- the environment sensor includes an environment sensor chip and a first integrated circuit chip electrically connected to the environment sensor chip, the environment sensor chip and the The first integrated circuit chips are all disposed in the accommodating cavity; and an acoustic sensor, the acoustic sensor includes a microphone chip and a second integrated circuit chip electrically connected to the microphone chip, the microphone chip and the first Both integrated circuit chips are arranged in the accommodating cavity.
- the technical solution of the present application integrates the environmental sensor and the acoustic sensor on the chip, mounts the chip on the surface of the substrate, and realizes electrical connection in the chip.
- the cover plate is bonded and connected to the substrate by a bonding structure, It is enclosed to form a package body with a containing cavity, and the integrated environmental sensor and acoustic sensor are both arranged in the containing cavity.
- the packaging body is equivalent to the function of the shell, so that the setting of the shell can be omitted, which is beneficial to further reduce the thickness of the combined sensor and realize its miniaturization.
- it also reduces the impact of external signals on environmental sensors and acoustic sensors, reduces noise introduction, and reduces power consumption.
- FIG. 1 is a schematic diagram of the internal structure of an embodiment of a combined sensor according to the present application.
- Figure 2 is a schematic sectional view of the combined sensor
- Figure 3 is a schematic view of the structure of the combined sensor from a perspective
- Figure 4 is a schematic view of the structure of the combined sensor from another perspective
- FIG. 5 is a schematic flowchart of steps of an embodiment of a method for manufacturing a combined sensor according to the present application
- FIG. 6 is a schematic diagram of the step flow of an embodiment of step S10 in FIG. 5;
- FIG. 7 is a schematic flow chart of the steps of another embodiment of the manufacturing method of the combined sensor in FIG. 5; FIG.
- FIG. 8 is a schematic diagram of the step flow of another embodiment of step S10 in FIG. 5;
- FIG. 9 is a schematic flowchart of steps of another embodiment of the manufacturing method of the combined sensor in FIG. 5; FIG.
- FIG. 10 is a schematic diagram of the structure after step S13 in FIG. 6;
- FIG. 11 is a schematic diagram of an intermediate structure of step S11 in FIG. 7;
- FIG. 12 is a schematic diagram of the structure after step S11 in FIG. 7;
- FIG. 13 is a schematic diagram of the structure after step S111 in FIG. 7;
- FIG. 14 is a schematic diagram of the structure after step S115 in FIG. 8;
- Fig. 15 is a schematic diagram of the structure after step S12a in Fig. 8.
- FIG. 16 is a schematic diagram of the structure after step S112a in FIG. 9;
- FIG. 17 is a schematic diagram of the structure after step S113 and step S112b in FIG. 9;
- FIG. 18 is a schematic diagram of the structure after step S22 in FIG. 9.
- the terms “connected”, “fixed”, etc. should be understood in a broad sense.
- “fixed” can be a fixed connection, a detachable connection, or a whole; It can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be an internal communication between two components or an interaction relationship between two components, unless specifically defined otherwise.
- “fixed” can be a fixed connection, a detachable connection, or a whole; It can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be an internal communication between two components or an interaction relationship between two components, unless specifically defined otherwise.
- This application proposes a combined sensor 100.
- the combined sensor 100 includes: a package body 10, the package body 10 includes a substrate 12 and a cover plate 19, the cover plate 19 and the substrate 12 are bonded by a bonding structure
- the environment sensor 30 includes an environment sensor chip 31 and a first integrated circuit chip 32 electrically connected to the environment sensor chip 31, and the environment sensor chip 31 and the first integrated circuit chip 32 are electrically connected to the environment sensor chip 31.
- An integrated circuit chip 32 is arranged in the accommodating cavity 11; and an acoustic sensor 40, which includes a microphone chip 41 and a second integrated circuit chip 42 electrically connected to the microphone chip 41, the microphone chip 41 and the second integrated circuit
- the chips 42 are all arranged in the accommodating cavity 11.
- the material of the substrate 12 and the cover plate 19 are generally insulating materials, such as silicon substrate 12; the two are connected by a bonding structure, wherein the bonding structure can be a gold-tin bonding structure, and the two are connected after bonding.
- the accommodating cavity 11 is formed together.
- the environmental sensor 30 and the acoustic sensor 40 are integrated on the chip and are electrically connected in the chip to reduce the influence of external signals on the environmental sensor 30 and the acoustic sensor 40, reduce the introduction of noise, and reduce the power consumption.
- the integrated environmental sensor 30 and acoustic sensor 40 are mounted on the upper surface of the substrate 12, and they are both arranged in the accommodating cavity 11, so that the setting of the housing can be omitted, which is beneficial to further reduce the cost of the combined sensor 100 Thickness, so as to achieve its miniaturization.
- the environmental sensor chip 31 and the microphone chip 41 are both MEMS chips, where the environmental sensor 30 can be an air pressure sensor, a temperature sensor, a humidity sensor or an optical sensor, and the corresponding environmental sensor chip 31 can be an air pressure sensor chip, a temperature sensor, or an optical sensor.
- the sensor chip, humidity sensor chip or optical sensor chip is used to sense changes in various parameters of the external environment.
- the first integrated circuit (ASIC) chip is used to process the signal output by the environmental sensor chip 31, so as to make the environment
- the sensor 30 has a function of detecting changes in the external environment.
- the microphone chip 41 of the acoustic sensor 40 is generally made of monocrystalline silicon, polycrystalline silicon or other silicon nitride materials, which are used to sense and detect sound sources, and can convert sound signals into electrical signals for transmission.
- the second integrated circuit chip 42 is used to The signal output by the microphone chip 41 is processed and provides a voltage for the microphone chip 41, so that the acoustic sensor 40 provides an acoustic function for the electronic device.
- an insulating glue layer is provided on the periphery of the first bonding structure 123 and the second bonding structure 194 to shield external electromagnetic interference.
- the setting positions of the environment sensor chip 31, the microphone chip 41, the first integrated circuit chip 32, and the second integrated circuit chip 42 can be referred to as shown in FIG. , Are all within the protection scope of this application.
- the technical solution of the present application integrates the environmental sensor 30 and the acoustic sensor 40 on the chip, mounts the chip on the surface of the substrate 12, and realizes electrical connection in the chip, and uses a bonding structure to connect
- a package body 10 with a containing cavity 11 is enclosed and formed, and the integrated environmental sensor 30 and the acoustic sensor 40 are both arranged in the containing cavity 11.
- the package body 10 functions as a shell, so that the setting of the shell can be omitted, which is beneficial to further reduce the thickness of the combined sensor 100 and realize its miniaturization.
- the influence of external signals on the environmental sensor 30 and the acoustic sensor 40 is also reduced, the introduction of noise is reduced, and the power consumption is reduced.
- the existing combined sensor 100 has a housing, and its thickness is generally above 1 mm. However, since the combined sensor 100 of the present application does not need to be provided with a housing, its overall thickness can be controlled within 0.8 mm. The thickness of the combined sensor 100 of the application is effectively reduced.
- the accommodating cavity 11 includes a accommodating cavity 111, a second sub-accommodating cavity 112, a third sub-accommodating cavity 113, and a fourth sub-accommodating cavity 114 that are independent of each other.
- the sensor chip 31 is arranged in the accommodating cavity 111
- the microphone chip 41 is arranged in the second sub-accommodating cavity 112
- the first integrated circuit chip 32 is arranged in the third sub-accommodating cavity 113
- the second integrated circuit chip 42 is disposed in the fourth sub-accommodating cavity 114.
- the environment sensor chip 31, the microphone chip 41, the first integrated circuit chip 32, and the second integrated circuit chip 42 are arranged in zones, and are respectively arranged in the independent accommodating cavity 11, so that the effect of isolation and shielding can be achieved, thereby reducing
- the electromagnetic interference between the environmental sensor 30 and the acoustic sensor 40 reduces the introduction of noise.
- the environment sensor 30 is an air pressure sensor
- the cover plate 19 is also provided with a first through hole 191 communicating with the accommodating cavity 111.
- the environmental sensor 30 is an air pressure sensor.
- the environmental sensor chip 31 is a MEMS air pressure chip. The following description mainly takes an air pressure sensor as an example.
- the first through hole 191 is mainly used to sense the air pressure change of the external environment.
- the cover plate 19 is further provided with a second through hole 192 communicating with the second sub-chamber.
- the second through hole 192 is mainly used for sensing and detecting external sound sources.
- the thickness direction of the substrate 12 is defined as the up-down direction, the direction facing the cover plate 19 is the upward direction, and the direction away from the cover plate 19 is the downward direction.
- the upper surface of the substrate 12 is provided with a first electrode layer 121
- the upper surface of the first electrode layer 121 is provided with a first bonding structure 123
- the lower surface of the cover plate 19 is provided with a second electrode
- the lower surface of the second electrode layer 193 is provided with a second bonding structure 194 corresponding to the first bonding structure 123
- the first bonding structure 123 is bonded to the second bonding structure 194, and is connected to the substrate 12 and the cover plate 19 enclose together to form the accommodating cavity 11.
- both the first electrode layer 121 and the second electrode layer 193 are made of metal layers, such as a copper layer, and the first electrode layer 121 and the second electrode layer 193 are arranged opposite to each other.
- the first bonding structure 123 and the second bonding structure 194 are arranged oppositely, and one of the two may be a gold bonding structure, and the other of the two may be a tin bonding structure. In this way, the cover plate 19 and the substrate 12 pass through the gold-tin bonding structure.
- the package body 10 can be obtained, and the first bonding structure 123, the second bonding structure 194, the substrate 12, and the cover 19 are enclosed to form an accommodating cavity 11 for accommodating the environmental sensor 30 and the acoustic sensor 40.
- the thickness of the first bonding structure 123 is generally controlled within a range of 0.4 mm-0.6 mm, which can help reduce the overall thickness of the combined sensor 100.
- the upper surface of the first electrode layer 121 is further provided with a first insulating layer 124, and the upper surface of the first insulating layer 124 is provided with a conductive layer 125.
- the upper surface is provided with a second insulating layer 126;
- the combined sensor 100 further includes a first metal wiring 13, a second metal wiring 14, a third metal wiring 15 and a fourth metal wiring 16, the first metal wiring 13,
- the second metal trace 14, the third metal trace 15 and the fourth metal trace 16 all penetrate the upper and lower surfaces of the second insulating layer 126, and all electrically abut the conductive layer 125;
- the environmental sensor chip 31 is mounted on The upper surface of the second insulating layer 126 is electrically connected to the first metal trace 13;
- the microphone chip 41 is mounted on the upper surface of the second insulating layer 126 and is electrically connected to the second metal trace 14;
- the integrated circuit chip 32 is mounted on the upper surface of the second insulating layer 126 and is electrically connected to the third metal trace 15;
- the first insulating layer 124 and the second insulating layer 126 can be made of silicon material, and the conductive layer 125 is usually a copper layer.
- the upper surface of the second insulating layer 126 is provided with a first wiring hole 1261, a second wiring hole 1262, a third wiring hole 1263, and a fourth wiring hole 1264 penetrating the lower surface and exposing the conductive layer 125, each
- a first metal trace 13, a second metal trace 14, a third metal trace 15 and a fourth metal trace 16 are provided in the trace hole, so that the lower end of each metal trace is electrically connected to the conductive layer 125 Abutting, and the upper end of each metal trace is exposed on the upper surface of the second insulating layer 126.
- the environmental sensor chip 31 is mounted on the upper surface of the second insulating layer 126 through die glue, and is electrically connected to the first metal trace 13 through a wire; the microphone chip 41 is mounted on the second insulating layer 126 through die glue The first integrated circuit chip 32 is mounted on the upper surface of the second insulating layer 126, and the lead at the bottom is electrically connected to the third metal wiring 15; The second integrated circuit chip 42 is mounted on the upper surface of the second insulating layer 126, and the lead at the bottom thereof is electrically connected to the fourth metal trace 16. In this way, the assembly of the environmental sensor 30 and the acoustic sensor 40 can be completed. Since the chips in the combined sensor 100 are electrically connected through the metal wires below, this can make the wire arrangement more regular and avoid mutual interference. , To ensure its safety. In addition, since each chip is distributed independently, it is unnecessary to open through holes for wiring, effectively avoiding mutual electromagnetic interference.
- two conductive layers 125 are generally provided.
- One conductive layer 125 is correspondingly provided under the environmental sensor chip 31 and the first integrated circuit chip 32, and is electrically connected to the environmental sensor chip 31 and the first integrated circuit chip 32 through metal traces.
- An integrated circuit chip 32; another conductive layer 125 is correspondingly disposed under the microphone chip 41 and the second integrated circuit chip 42, and is electrically connected to the microphone chip 41 and the second integrated circuit chip 42 through metal traces. In this way, the electrical connection can be realized more effectively, and the length of the connecting wire is shorter, and the setting operation of the metal wiring is more convenient.
- the upper surface of the substrate 12 is further provided with a pad structure 122
- the combined sensor 100 further includes a fifth metal wiring 17 and a sixth metal wiring 18, and a fifth metal wiring 17 and a sixth metal wiring 18 all penetrate the first insulating layer 124 and the second insulating layer 126 in sequence, and both electrically abut the pad structure 122.
- the end of the fifth metal trace 17 away from the pad structure 122 is electrically connected to the first insulating layer 124 and the second insulating layer 126.
- the integrated circuit chip 32, the end of the sixth metal trace 18 away from the pad structure 122 is electrically connected to the second integrated circuit chip 42; the lower surface of the substrate 12 is also provided with exposure holes corresponding to the pad structure 122 to expose the pads Structure 122.
- the material of the pad structure 122 is generally copper
- the second insulating layer 126 is provided with a fifth wiring hole 1265 and a sixth wiring hole 1266 corresponding to the upper surface of the pad structure 122, and the fifth wiring hole 1265 and The sixth wiring holes 1266 all penetrate the first insulating layer 124 and all expose the pad structure 122.
- the fifth metal wiring 17 and the sixth metal wiring 18 are distributed in the fifth wiring hole 1265 and the sixth wiring hole 1266, and the lower ends of the fifth metal wiring 17 and the sixth metal wiring 18 are electrically equal
- the upper ends of the bonding pad structure 122 are exposed on the upper surface of the second insulating layer 126, and the leads electrically connected to the bottoms of the first integrated circuit chip 32 and the second integrated circuit chip 42 are distributed.
- the bottom surface of the substrate 12 is provided with exposure holes corresponding to the structure of the pad structure 122, so that the pad structure 122 is exposed, so that the electrostatic charge carried by the pad structure 122 can be quickly conducted away, and the antistatic ability of the combined sensor 100 is effectively improved. .
- the pad structure 122 is arranged corresponding to the first integrated circuit chip 32 and the second integrated circuit chip 42.
- the bonding pad structure 122 is correspondingly arranged under the first integrated circuit chip 32 and the second integrated circuit chip 42, which can more quickly export the electrostatic charge to the outside, and more effectively improve the antistatic ability of the combined sensor 100; at the same time, the metal The length of the trace is short, and the setting operation of the metal trace is more convenient.
- the present application also proposes a manufacturing method of the combined sensor 100. Please refer to FIG. 5.
- the manufacturing method of the combined sensor 100 includes the following steps:
- Step S10 providing the base plate 12 and the cover plate 19;
- Step S20 an environment sensor 30 and an acoustic sensor 40 are fabricated on the upper surface of the substrate 12.
- the environment sensor 30 includes an environment sensor chip 31 and a first integrated circuit chip 32 electrically connected to the environment sensor chip 31, and the acoustic sensor 40 Including a microphone chip 41 and a second integrated circuit chip 42 electrically connected to the microphone chip 41;
- Step S30 bonding the cover plate 19 to the base plate 12 to enclose and form an accommodating cavity 11, and the environmental sensor 30 and the acoustic sensor 40 are both located in the accommodating cavity 11.
- the package body 10 with the accommodating cavity 11 is first produced by the packaging method.
- the packaging method usually adopts the packaging method of gold-tin bonding. Of course, other reasonable and effective packaging methods can also be used.
- the environmental sensor 30 and the acoustic sensor 40 are manufactured in the accommodating cavity 11.
- the environmental sensor 30 and the acoustic sensor 40 are integrated on the chip, and electrical connections are realized in the chip, which can reduce the impact of external signals on the environmental sensor.
- the influence of 30 and the acoustic sensor 40 reduces the introduction of noise and reduces power consumption. Since the integrated environment sensor 30 and the acoustic sensor 40 are both located in the accommodating cavity 11 of the package body 10, the manufacture of the shell can be omitted, which is beneficial to further reduce the thickness of the combined sensor 100 and realize its miniaturization.
- the method before step S20, the method further includes:
- Step S11 forming a first electrode layer 121 on the upper surface of the substrate 12;
- Step S12 forming a first bonding structure 123 on the upper surface of the first electrode layer 121;
- Step S13 forming a second electrode layer 193 on the lower surface of the cover plate 19, and forming a second bonding structure 194 on the lower surface of the second electrode layer 193;
- step S30 includes
- step S30a the first bonding structure 123 of the substrate 12 is aligned with the second bonding structure 194 of the cover 19 to perform bonding and packaging, and the package body 10 is obtained.
- both the substrate 12 and the cover plate 19 can adopt a silicon substrate 12, and both the first electrode layer 121 and the second electrode layer 193 can adopt a copper layer, and they are arranged opposite to each other.
- a copper layer is first deposited on the upper surface of the substrate 12, and a dielectric material layer is pressed on the upper surface of the copper layer.
- the dielectric material layer is an insulating layer.
- a light etching process is used to etch away part of the dielectric material layer and etched.
- the copper layer is etched, and then the dielectric material layer is removed to obtain the first electrode layer 121.
- the second electrode layer 193 is fabricated on the lower surface of the cover plate 19 in the same way.
- the first bonding structure 123 and the second bonding structure are arranged correspondingly, and one of the two is a gold bonding structure, and the other of the two is a tin bonding structure. Finally, the first bonding structure 123 is aligned with the second bonding structure 194, and the first bonding structure 123 and the second bonding structure 194 are adhesively bonded together by pressing and heating to obtain the package. ⁇ 10 ⁇ Body 10. It can be understood that after the manufacturing is completed, the first bonding structure 123, the second bonding structure 194, the substrate 12 and the cover 19 are formed into the accommodating cavity 11 of the package body 10.
- step S11 it also includes:
- Step S111 depositing a first insulating layer 124 on the upper surface of the first electrode layer 121, and forming a conductive layer 125 on the upper surface of the first insulating layer 124;
- a second insulating layer 126 is deposited on the upper surface of the conductive layer 125, and the second insulating layer 126 is etched to obtain a first via hole and a second wiring hole 1262 that expose the conductive layer 125.
- Step S113 electroplating the first metal wiring 13 and the fourth wiring hole 1264 in the first wiring hole 1261, the second wiring hole 1262, the third wiring hole 1263, and the fourth wiring hole 1264.
- Step S20 includes:
- Step S21 Mount the environmental sensor chip 31, the microphone chip 41, the first integrated circuit chip 32, and the second integrated circuit chip 42 on the upper surface of the second insulating layer 126, and The environment sensor chip 31 and the first metal wiring 13 are electrically connected through wires, the microphone chip 41 and the second metal wiring 14 are electrically connected through wires, and the first The integrated circuit chip 32 is electrically connected to the third metal trace 15; the second integrated circuit chip 42 is electrically connected to the fourth metal trace 16.
- both the first insulating layer 124 and the second insulating layer 126 can be made of silicon-based materials, and the conductive layer 125 can be a copper layer.
- the first via, the second via 1262, the third via 1263, and the fourth The holes 1264 are obtained by etching the second insulating layer 126 using a light etching process, and all expose the conductive layer 125 below.
- the first metal trace 13, the second metal trace 14, the third metal trace 15 and the fourth metal trace 16 can be made of copper or tin, and their lower ends are electrically contacted with the conductive layer below. 125. The upper ends are all exposed on the upper surface of the second insulating layer 126 for electrically connecting the air pressure sensor and the microphone sensor.
- the lower surfaces of the environmental sensor chip 31 and the microphone chip 41 are firstly dispensed to produce a chip glue, and then the upper surface of the second insulating layer 126 is pasted using a patch process.
- the environment sensor chip 31 is mounted, and the WB wire bonding process is performed, and the environment sensor chip 31 is electrically connected to the upper end of the first metal trace 13 through a wire; the same method is used to paste on the upper surface of the second insulating layer 126 Upper microphone chip 41, and electrically connect the microphone chip 41 to the upper end of the second metal trace 14 through a wire; then, perform the process on the upper surface of the second insulating layer 126 corresponding to the third metal trace 15 and the fourth metal trace 16
- the first integrated circuit chip 32 and the second integrated circuit chip 42 are mounted and heated to realize the first integrated circuit chip 32, the second integrated circuit chip 42 and the third metal trace 15 and the fourth metal trace 16's electrical conduction.
- the mounting operation of the environmental sensor 30 and the acoustic sensor 40 can be completed. Since the chips in the combined sensor 100 are electrically connected through the metal wires below, this can make the wire arrangement more regular and avoid mutual interference. Interference occurs between them, ensuring its safety. In addition, since each chip is distributed independently, it is unnecessary to open through holes for wiring, effectively avoiding mutual electromagnetic interference.
- the method further includes:
- Step S114 an electroplating area 1241 exposing the first electrode layer 121 is opened on the upper surface of the first insulating layer 124;
- a photoresist structure 127 is fabricated on the upper surface of the first insulating layer 124.
- the photoresist structure 127 is provided with a photolithography hole 1271, and the photoresist hole 1271 corresponds to and is connected to the electroplating area 1241. Pass.
- step S12 includes:
- step S12a a first bonding structure 123 is fabricated in the electroplating area 1241 and the photolithography hole 1271, and the insulating glue layer inside the first bonding structure 123 is removed.
- the first insulating layer 124 is etched by a light etching process to obtain the electroplating area 1241 where the first electrode layer 121 is exposed.
- the photoresist layer is leveled on the upper surface of the first insulating layer 124 to serve as the protective area of the non-electroplating first bonding structure 123 area, and the photoresist layer is photoetched by the overetching process to obtain a photoresist layer with photoetching holes 1271
- the photoresist structure 127, wherein the photoetching hole 1271 corresponds to and communicates with the plating area 1241 below.
- the photoetching hole 1271 and the electroplating area 1241 are electroplated with gold (or tin), and the inner photoresist structure 127 is removed, the first bonding structure 123 and the outer photoresist can be fabricated.
- the photoresist is mainly Play a role in shielding external interference.
- the thickness of the photoresist structure 127 is generally controlled within a range of 0.5 mm-0.8 mm, which can help reduce the overall thickness of the combined sensor 100.
- step S11 the method further includes:
- Step S11a forming a pad structure 122 on the upper surface of the substrate 12.
- step S11b etching is performed on the lower surface of the substrate 12 corresponding to the pad structure 122 to expose the pad structure 122.
- the manufacturing method of the pad structure 122 can refer to the manufacturing method of the first electrode layer 121 described above, that is, a copper layer is deposited on the upper surface of the substrate 12, and a dielectric material layer is pressed on the upper surface of the copper layer. It is an insulating layer. Afterwards, a part of the dielectric material layer is etched by a light etching process, and the copper layer is etched, and then the dielectric material layer is removed, and the first electrode layer 121 and the pad structure 122 can be obtained at the same time. Afterwards, the lower surface of the substrate 12 is etched by a light etching process to etch out the outer pad area of the exposed pad structure 122, which is used to connect external parts.
- step S112 the method further includes:
- Step S112a etching the upper surface of the second insulating layer 126 to obtain a fifth wiring hole 1265 and a sixth wiring hole 1266 that penetrate the first insulating layer 124 and expose the pad structure 122;
- Step S112b forming a fifth metal wiring 17 and a sixth metal wiring 18 in the fifth wiring hole 1265 and the sixth wiring hole 1266, respectively.
- the upper surface of the second insulating layer 126 is etched using a light etching process to obtain the fifth wiring hole 1265 and the sixth wiring hole 1266 that penetrate the first insulating layer 124 and expose the pad structure 122, and then The fifth wire hole 1265 and the sixth wire hole 1266 are electroplated to obtain the fifth metal wire 17 and the sixth metal wire 18 respectively.
- the fifth metal wiring 17 and the sixth metal wiring 18 are both provided corresponding to the first integrated circuit chip 32 and the second integrated circuit chip 42, and both penetrate the first insulating layer 124 and the second insulating layer 126.
- the lower ends are electrically contacted with the bonding pad structure 122, and the upper ends are exposed on the upper surface of the second insulating layer 126 for electrically connecting the first integrated circuit chip 32 and the second integrated circuit chip 42.
- step S21 it further includes:
- Step S22 electrically connecting the first integrated circuit chip 32 and the fifth metal wiring 17; electrically connecting the second integrated circuit chip 42 and the sixth metal wiring 18.
- the upper ends of the fifth metal trace 17 and the sixth metal trace 18 are respectively connected to the first integrated circuit chip 32 and the second integrated circuit chip 32 and the second integrated circuit chip.
- the integrated circuit chip 42 is electrically conductive. In this way, the electric charge carried by static electricity can be quickly conducted away through the pad structure 122, and the antistatic ability of the combined sensor 100 can be effectively improved.
- the accommodating cavity 11 includes a accommodating cavity 111, a second sub-accommodating cavity 112, a third sub-accommodating cavity 113, and a fourth sub-accommodating cavity that are independent of each other.
- Set cavity 114; Step S20 includes:
- the environmental sensor chips 31, 31 are mounted in the accommodating cavity 111, the second sub accommodating cavity 112, the third sub accommodating cavity 113, and the fourth sub accommodating cavity 114, respectively.
- the first bonding structure 123, the second bonding structure 194, the substrate 12, and the cover 19 are jointly enclosed to form a mutually independent accommodating cavity 111, a second sub-accommodating cavity 112, and a third sub-accommodating cavity.
- the environment sensor chip 31, the microphone chip 41, the first integrated circuit chip 32 and the second integrated circuit chip 42 are arranged in partitions, and are respectively arranged in the independent accommodating cavity 11, so that the effect of isolation and shielding can be achieved, thereby reducing the environment.
- the electromagnetic interference between the sensor 30 and the acoustic sensor 40 reduces the introduction of noise.
- the environmental sensor 30 is an air pressure sensor, and after step S20, the method further includes:
- a first through hole 191 and a second through hole 192 are opened on the surface of the package body 10, the first through hole 191 communicates with the accommodating cavity 111, and the second through hole 192 communicates with the second sub-container. ⁇ cavity 112.
- the first through hole 191 is mainly opened on the top of the package body 10 and communicated with the accommodating cavity 111 for sensing the air pressure change of the external environment.
- the second through hole 192 is generally opened on the top of the package body 10 and communicated with the second sub-cavity for sensing and detecting external sound sources.
- the present application also proposes an electronic device that includes the combined sensor 100 as described above, and the specific structure of the combined sensor 100 refers to the foregoing embodiment. Since all the technical solutions of all the foregoing embodiments are adopted, it has at least all the beneficial effects brought about by the technical solutions of the foregoing embodiments, which will not be repeated here.
- the electronic devices are generally mobile phones, watches, earphones, bracelets, etc.
- the combined sensor 100 is generally installed in the housing of the electronic device, so that the electronic device can achieve more functions.
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Abstract
Description
本申请要求:2020年03月25日申请的、申请号为202010222767.4、名称为“组合传感器及其制作方法、以及电子设备”的中国专利申请的优先权,在此将其引入作为参考。This application claims: the priority of the Chinese patent application filed on March 25, 2020, with application number 202010222767.4, titled "combined sensor and its manufacturing method, and electronic equipment", which is hereby incorporated by reference.
本申请涉及传感器技术领域,特别涉及一种组合传感器及其制作方法、以及电子设备。This application relates to the field of sensor technology, and in particular to a combined sensor, a manufacturing method thereof, and electronic equipment.
随着手机、手表、耳机等消费类电子产品朝着“轻、薄、短、小”的发展趋势,其核心零部件传感器的发展方向也朝着小型化和集成化的方向发展。其中,环境传感器(如气压传感器)和声学传感器(如麦克风传感器)是这类电子产品的标配器件,通过将环境传感器和声学传感器集成封装成组合传感器,有利于采集更多的信息,实现更多的功能。但是,目前,该类组合传感器通常是采用独立的壳体封装形式,因为采用了独立壳体的封装方案因此需要壳体的高度大于芯片厚度和封装基板厚度之和。但是这样会使得组合传感器的整体厚度增加,不利于实现其小型化。With the development trend of "light, thin, short, and small" consumer electronics products such as mobile phones, watches, earphones, etc., the development direction of its core component sensors is also moving towards miniaturization and integration. Among them, environmental sensors (such as air pressure sensors) and acoustic sensors (such as microphone sensors) are standard components of such electronic products. By integrating environmental sensors and acoustic sensors into a combined sensor, it is helpful to collect more information and achieve better Many functions. However, at present, this type of combined sensor usually adopts an independent shell packaging form, because the packaging solution of an independent shell is adopted, so the height of the shell is required to be greater than the sum of the thickness of the chip and the thickness of the packaging substrate. However, this will increase the overall thickness of the combined sensor, which is not conducive to its miniaturization.
上述内容仅用于辅助理解本申请的技术方案,并不代表承认上述内容是现有技术。The above content is only used to assist the understanding of the technical solution of the application, and does not mean that the above content is recognized as prior art.
本申请的主要目的是提供一种组合传感器及其制作方法、以及电子设备,旨在有效减小组合传感器的厚度,实现组合传感器的小型化。The main purpose of the present application is to provide a combined sensor, a manufacturing method thereof, and electronic equipment, aiming to effectively reduce the thickness of the combined sensor and realize the miniaturization of the combined sensor.
为实现上述目的,本申请提出的组合传感器,包括:封装体,所述封装体包括基板和盖板,所述基板与所述盖板通过键合结构键合连接,且围合形成容置腔;环境传感器,所述环境传感器包括环境传感芯片和与所述环境传感芯片电性连接的第一集成电路芯片,所述环境传感芯片和所述第一集成电路芯片均设于所述容置腔内;以及声学传感器,所述声学传感器包括麦克风芯片和与所述麦克风芯片电性连接的第二集成电路芯片,所述麦克风芯片和所述第二集成电路芯片均设于所述容置腔内。In order to achieve the above objective, the combined sensor proposed in the present application includes: a package body, the package body includes a substrate and a cover plate, the substrate and the cover plate are bonded and connected by a bonding structure, and are enclosed to form an accommodating cavity Environmental sensor, the environmental sensor includes an environmental sensor chip and a first integrated circuit chip electrically connected to the environmental sensor chip, the environmental sensor chip and the first integrated circuit chip are both set in the An accommodating cavity; and an acoustic sensor, the acoustic sensor including a microphone chip and a second integrated circuit chip electrically connected to the microphone chip, the microphone chip and the second integrated circuit chip are both provided in the container置内内。 In the cavity.
在一实施例中,所述容置腔包括相互独立的第一子容置腔、第二子容置腔、第三子容置腔及第四子容置腔,所述环境传感芯片设于所述第一子容置腔内,所述麦克风芯片设于所述第二子容置腔内,所述第一集成电路芯片设于所述第三子容置腔内,所述第二集成电路芯片设于所述第四子容置腔内。In one embodiment, the accommodating cavity includes a first sub-accommodating cavity, a second sub-accommodating cavity, a third sub-accommodating cavity, and a fourth sub-accommodating cavity that are independent of each other, and the environmental sensor chip is provided with In the first sub-accommodating cavity, the microphone chip is arranged in the second sub-accommodating cavity, the first integrated circuit chip is arranged in the third sub-accommodating cavity, and the second The integrated circuit chip is arranged in the fourth sub-accommodating cavity.
在一实施例中,所述环境传感器为气压传感器,所述盖板还开设有连通所述第一子容置腔的第一通孔;和/或,所述盖板还开设有连通所述第二子容置腔的第二通孔。In an embodiment, the environmental sensor is an air pressure sensor, and the cover plate is further provided with a first through hole communicating with the first sub-accommodating cavity; and/or, the cover plate is also provided with a first through hole communicating with the The second through hole of the second sub-accommodating cavity.
在一实施例中,定义所述基板的厚度方向为上下方向,且朝向所述盖板的方向为上方向,背向所述盖板的方向为下方向,所述基板的上表面设置有第一电极层,所述第一电极层的上表面设置有第一键合结构;所述盖板的下表面设置有第二电极层,所述第二电极层的下表面设置有与所述第一键合结构相对应的第二键合结构;所述第一键合结构与所述第二键合结构键合连接,并与所述基板和所述盖板共同围合形成所述容置腔。In one embodiment, it is defined that the thickness direction of the substrate is the up-down direction, the direction facing the cover plate is the upward direction, the direction away from the cover plate is the downward direction, and the upper surface of the substrate is provided with a first An electrode layer, the upper surface of the first electrode layer is provided with a first bonding structure; the lower surface of the cover plate is provided with a second electrode layer, and the lower surface of the second electrode layer is provided with the first bonding structure; A second bonding structure corresponding to a bonding structure; the first bonding structure is bonded to the second bonding structure, and is enclosed with the substrate and the cover plate to form the accommodation Cavity.
在一实施例中,所述第一电极层的上表面还设置有第一绝缘层,所述第一绝缘层的上表面设置有导电层,所述导电层的上表面设置有第二绝缘层;所述组合传感器还包括第一金属走线、第二金属走线、第三金属走线及第四金属走线,所述第一金属走线、所述第二金属走线、所述第三金属走线及所述第四金属走线均贯穿所述第二绝缘层的上下表面,且均与所述导电层电性抵接;所述环境传感芯片贴装于所述第二绝缘层的上表面,并电性连接于所述第一金属走线;所述麦克风芯片贴装于所述第二绝缘层的上表面,并电性连接于所述第二金属走线;所述第一集成电路芯片贴装于所述第二绝缘层的上表面,并电性连接于所述第三金属走线;所述第二集成电路芯片贴装于所述第二绝缘层的上表面,并电性连接于所述第四金属走线。In an embodiment, the upper surface of the first electrode layer is further provided with a first insulating layer, the upper surface of the first insulating layer is provided with a conductive layer, and the upper surface of the conductive layer is provided with a second insulating layer The combined sensor also includes a first metal trace, a second metal trace, a third metal trace, and a fourth metal trace, the first metal trace, the second metal trace, the first metal trace The three metal traces and the fourth metal trace both penetrate the upper and lower surfaces of the second insulating layer, and both electrically abut the conductive layer; the environmental sensor chip is mounted on the second insulating layer The upper surface of the layer is electrically connected to the first metal trace; the microphone chip is mounted on the upper surface of the second insulating layer and is electrically connected to the second metal trace; The first integrated circuit chip is mounted on the upper surface of the second insulating layer and is electrically connected to the third metal trace; the second integrated circuit chip is mounted on the upper surface of the second insulating layer , And electrically connected to the fourth metal trace.
在一实施例中,所述基板的上表面还设置有焊盘结构,所述组合传感器还包括第五金属走线和第六金属走线,所述第五金属走线和所述第六金属走线均依次贯穿所述第一绝缘层和所述第二绝缘层,且均与所述焊盘结构电性抵接,所述第五金属走线背离所述焊盘结构的端部电性连接于所述第一集成电路芯片,所述第六金属走线背离所述焊盘结构的端部电性连接于所述第二集成电路芯片;所述基板的下表面对应所述焊盘结构还开设有显露孔,以显露所述焊盘结构。In an embodiment, the upper surface of the substrate is further provided with a pad structure, the combined sensor further includes a fifth metal trace and a sixth metal trace, the fifth metal trace and the sixth metal trace The traces all penetrate the first insulating layer and the second insulation layer in sequence, and are electrically abutted with the pad structure, and the fifth metal trace is electrically away from the end of the pad structure. Connected to the first integrated circuit chip, the end of the sixth metal trace away from the pad structure is electrically connected to the second integrated circuit chip; the lower surface of the substrate corresponds to the pad structure Exposure holes are also opened to expose the pad structure.
在一实施例中,所述焊盘结构对应于所述第一集成电路芯片和所述第二集成电路芯片设置。In an embodiment, the pad structure is arranged corresponding to the first integrated circuit chip and the second integrated circuit chip.
本申请还提出了一种组合传感器的制作方法,所述组合传感器的制作方法包括以下步骤:This application also proposes a method for manufacturing a combined sensor, which includes the following steps:
提供基板和盖板;Provide base plate and cover plate;
在所述基板的上表面制作环境传感器和声学传感器,所述环境传感器包括环境传感芯片和与所述环境传感芯片电性连接的第一集成电路芯片,所述声学传感器包括麦克风芯片和与所述麦克风芯片电性连接的第二集成电路芯片;An environmental sensor and an acoustic sensor are fabricated on the upper surface of the substrate. The environmental sensor includes an environmental sensor chip and a first integrated circuit chip electrically connected to the environmental sensor chip. The acoustic sensor includes a microphone chip and A second integrated circuit chip electrically connected to the microphone chip;
将所述盖板键合连接于所述基板,以围合形成具有容置腔的封装体,所述环境传感器和所述声学传感器均位于所述容置腔内。The cover plate is connected to the substrate by bonding to form a package with a containing cavity, and the environmental sensor and the acoustic sensor are both located in the containing cavity.
在一实施例中,在所述基板的上表面制作环境传感器和声学传感器的步骤之前,包括:In an embodiment, before the step of fabricating an environmental sensor and an acoustic sensor on the upper surface of the substrate, the method includes:
在所述基板的上表面制作第一电极层;Fabricating a first electrode layer on the upper surface of the substrate;
在所述第一电极层的上表面制作第一键合结构;Fabricating a first bonding structure on the upper surface of the first electrode layer;
在所述盖板的下表面制作第二电极层,并在所述第二电极层的下表面制作第二键合结构;Fabricating a second electrode layer on the bottom surface of the cover plate, and fabricating a second bonding structure on the bottom surface of the second electrode layer;
将所述盖板键合连接于所述基板的步骤包括:The step of bonding the cover plate to the substrate includes:
将所述基板的第一键合结构对准所述盖板的所述第二键合结构,进行键合封装。Aligning the first bonding structure of the substrate with the second bonding structure of the cover plate to perform bonding and packaging.
在一实施例中,在所述基板的上表面制作第一电极层的步骤之后,还包括:In an embodiment, after the step of fabricating the first electrode layer on the upper surface of the substrate, the method further includes:
在所述第一电极层的上表面沉积第一绝缘层,并在所述第一绝缘层的上表面制作导电层;Depositing a first insulating layer on the upper surface of the first electrode layer, and fabricating a conductive layer on the upper surface of the first insulating layer;
在所述导电层的上表面沉积第二绝缘层,并腐蚀所述第二绝缘层,得到显露所述导电层的第一过线孔、第二走线孔、第三走线孔及第四走线孔;A second insulating layer is deposited on the upper surface of the conductive layer, and the second insulating layer is etched to obtain a first via hole, a second wire hole, a third wire hole, and a fourth wire hole that expose the conductive layer. Wire hole
分别在所述第一走线孔、所述第二走线孔、所述第三走线孔及所述第四走线孔内电镀制作第一金属走线、第二金属走线、第三金属走线及第四金属走线;The first metal trace, the second metal trace, and the third metal trace are electroplated in the first trace hole, the second trace hole, the third trace hole, and the fourth trace hole, respectively. Metal trace and the fourth metal trace;
在所述基板的上表面制作环境传感器和声学传感器的步骤中,包括:The step of fabricating an environmental sensor and an acoustic sensor on the upper surface of the substrate includes:
在所述第二绝缘层的上表面分别贴装所述环境传感芯片、所述麦克风芯片、所述第一集成电路芯片及所述第二集成电路芯片,并将所述环境传感芯片与所述第一金属走线通过导线电性连接,将所述麦克风芯片与所述第二金属走线通过导线电性连接,并将所述第一集成电路芯片与所述第三金属走线电性连接;将所述第二集成电路芯片与所述第四金属走线电性连接。Mount the environment sensor chip, the microphone chip, the first integrated circuit chip, and the second integrated circuit chip on the upper surface of the second insulating layer, and connect the environment sensor chip with The first metal trace is electrically connected through a wire, the microphone chip and the second metal trace are electrically connected through a wire, and the first integrated circuit chip is electrically connected to the third metal trace. Sexual connection; electrically connecting the second integrated circuit chip and the fourth metal trace.
在一实施例中,在所述第一电极层的上表面沉积第一绝缘层,并在所述第一绝缘层的上表面制作导电层的步骤之后,还包括:In an embodiment, after the step of depositing a first insulating layer on the upper surface of the first electrode layer and forming a conductive layer on the upper surface of the first insulating layer, the method further includes:
在所述第一绝缘层的上表面开设有显露所述第一电极层的电镀区域;An electroplating area exposing the first electrode layer is opened on the upper surface of the first insulating layer;
在所述第一绝缘层的上表面制作光刻胶结构,所述光刻胶结构设置有光刻孔,所述光刻孔与所述电镀区域对应且相连通;Fabricating a photoresist structure on the upper surface of the first insulating layer, the photoresist structure is provided with a photoetching hole, and the photoetching hole corresponds to and communicates with the electroplating area;
在所述第一电极层的上表面制作第一键合结构的步骤包括:The step of fabricating a first bonding structure on the upper surface of the first electrode layer includes:
在所述电镀区域和所述光刻孔内制作第一键合结构,并去掉所述第一键合结构内侧的绝缘胶层。A first bonding structure is fabricated in the electroplating area and the photoetching hole, and the insulating glue layer inside the first bonding structure is removed.
在一实施例中,在所述基板的上表面制作第一电极层的步骤之后,还包括:In an embodiment, after the step of fabricating the first electrode layer on the upper surface of the substrate, the method further includes:
在所述基板的上表面制作焊盘结构;Fabricating a pad structure on the upper surface of the substrate;
在所述基板对应于所述焊盘结构的下表面进行蚀刻,以显露所述焊盘结构;Etching the bottom surface of the substrate corresponding to the pad structure to expose the pad structure;
在所述导电层的上表面沉积第二绝缘层,并腐蚀所述第二绝缘层,得到显露所述导电层的第一过线孔、第二走线孔、第三走线孔及第四走线孔的步骤之后,还包括:A second insulating layer is deposited on the upper surface of the conductive layer, and the second insulating layer is etched to obtain a first via hole, a second wire hole, a third wire hole, and a fourth wire hole that expose the conductive layer. After the steps of routing holes, it also includes:
蚀刻所述第二绝缘层的上表面,得到贯穿所述第一绝缘层且显露所述焊盘结构的第五走线孔和第六走线孔;Etching the upper surface of the second insulating layer to obtain a fifth wiring hole and a sixth wiring hole that penetrate the first insulating layer and expose the pad structure;
分别在所述第五走线孔和所述第六走线孔内制作第五金属走线和第六金属走线;Making a fifth metal wiring and a sixth metal wiring in the fifth wiring hole and the sixth wiring hole respectively;
在所述基板的上表面制作环境传感器和声学传感器的步骤中,还包括:The step of fabricating an environmental sensor and an acoustic sensor on the upper surface of the substrate further includes:
将所述第一集成电路芯片与所述第五金属走线电性连接;将所述第二集成电路芯片与所述第六金属走线电性连接。The first integrated circuit chip is electrically connected with the fifth metal trace; the second integrated circuit chip is electrically connected with the sixth metal trace.
在一实施例中,所述容置腔包括相互独立的第一子容置腔、第二子容置腔、第三子容置腔及第四子容置腔;In an embodiment, the accommodating cavity includes a first sub-accommodating cavity, a second sub-accommodating cavity, a third sub-accommodating cavity, and a fourth sub-accommodating cavity that are independent of each other;
在所述基板的上表面制作环境传感器和声学传感器的步骤中,包括:The step of fabricating an environmental sensor and an acoustic sensor on the upper surface of the substrate includes:
分别在所述基板位于所述第一子容置腔内、所述第二子容置腔内、所述第三子容置腔内及所述第四子容置腔内的表面贴装环境传感芯片、麦克风芯片、第一集成电路芯片及第二集成电路芯片。Respectively in the surface mount environment where the substrate is located in the first sub-accommodating cavity, the second sub-accommodating cavity, the third sub-accommodating cavity, and the fourth sub-accommodating cavity Sensor chip, microphone chip, first integrated circuit chip and second integrated circuit chip.
在一实施例中,所述环境传感器为气压传感器,将所述盖板键合连接于所述基板的步骤之后,还包括:In an embodiment, the environmental sensor is an air pressure sensor, and after the step of bonding and connecting the cover plate to the substrate, the method further includes:
在所述盖板的表面开设第一通孔和第二通孔,所述第一通孔连通所述第一子容置腔,所述第二通孔连通所述第二子容置腔。A first through hole and a second through hole are opened on the surface of the cover plate, the first through hole communicates with the first sub-accommodating cavity, and the second through hole communicates with the second sub-accommodating cavity.
本申请还提出了一种电子设备,所述电子设备包括组合传感器,所述组合传感器包括:封装体,所述封装体包括基板和盖板,所述基板与所述盖板通过键合结构键合连接,且围合形成容置腔;环境传感器,所述环境传感器包括环境传感芯片和与所述环境传感芯片电性连接的第一集成电路芯片,所述环境传感芯片和所述第一集成电路芯片均设于所述容置腔内;以及声学传感器,所述声学传感器包括麦克风芯片和与所述麦克风芯片电性连接的第二集成电路芯片,所述麦克风芯片和所述第二集成电路芯片均设于所述容置腔内。The application also proposes an electronic device. The electronic device includes a combined sensor. The combined sensor includes a package. The package includes a substrate and a cover. The substrate and the cover are bonded by a bonding structure. The environment sensor includes an environment sensor chip and a first integrated circuit chip electrically connected to the environment sensor chip, the environment sensor chip and the The first integrated circuit chips are all disposed in the accommodating cavity; and an acoustic sensor, the acoustic sensor includes a microphone chip and a second integrated circuit chip electrically connected to the microphone chip, the microphone chip and the first Both integrated circuit chips are arranged in the accommodating cavity.
本申请的技术方案,通过将环境传感器和声学传感器集成在芯片上,将芯片贴装在基板的表面,并在芯片中实现电性连接,采用键合结构将盖板键合连接于基板后,便围合形成了具有容置腔的封装体,集成后的环境传感器和声学传感器均设置于该容置腔内。这里封装体相当于壳体的作用,如此便可省去壳体的设置,这样有利于进一步减小组合传感器的厚度,实现其小型化。同时,也降低了外部信号对环境传感器和声学传感器的影响,减小了噪音引入,降低了功耗。The technical solution of the present application integrates the environmental sensor and the acoustic sensor on the chip, mounts the chip on the surface of the substrate, and realizes electrical connection in the chip. After the cover plate is bonded and connected to the substrate by a bonding structure, It is enclosed to form a package body with a containing cavity, and the integrated environmental sensor and acoustic sensor are both arranged in the containing cavity. Here, the packaging body is equivalent to the function of the shell, so that the setting of the shell can be omitted, which is beneficial to further reduce the thickness of the combined sensor and realize its miniaturization. At the same time, it also reduces the impact of external signals on environmental sensors and acoustic sensors, reduces noise introduction, and reduces power consumption.
为了更清楚地说明本申请实施例或相关技术中的技术方案,下面将对实施例或相关技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图示出的结构获得其他的附图。In order to more clearly describe the technical solutions in the embodiments of the present application or related technologies, the following will briefly introduce the accompanying drawings that need to be used in the description of the embodiments or related technologies. Obviously, the accompanying drawings in the following description are merely present For some of the embodiments of the application, for those of ordinary skill in the art, without creative work, other drawings may be obtained based on the structure shown in these drawings.
图1为本申请组合传感器一实施例的内部结构示意图;FIG. 1 is a schematic diagram of the internal structure of an embodiment of a combined sensor according to the present application;
图2为组合传感器的剖视结构示意图;Figure 2 is a schematic sectional view of the combined sensor;
图3为组合传感器一视角的结构示意图;Figure 3 is a schematic view of the structure of the combined sensor from a perspective;
图4为组合传感器又一视角的结构示意图;Figure 4 is a schematic view of the structure of the combined sensor from another perspective;
图5为本申请组合传感器的制作方法一实施例的步骤流程示意图;FIG. 5 is a schematic flowchart of steps of an embodiment of a method for manufacturing a combined sensor according to the present application;
图6为图5中步骤S10一实施例的步骤流程示意图;FIG. 6 is a schematic diagram of the step flow of an embodiment of step S10 in FIG. 5;
图7为图5中组合传感器的制作方法另一实施例的步骤流程示意图;FIG. 7 is a schematic flow chart of the steps of another embodiment of the manufacturing method of the combined sensor in FIG. 5; FIG.
图8为图5中步骤S10另一实施例的步骤流程示意图;FIG. 8 is a schematic diagram of the step flow of another embodiment of step S10 in FIG. 5;
图9为图5中组合传感器的制作方法另一实施例的步骤流程示意图;FIG. 9 is a schematic flowchart of steps of another embodiment of the manufacturing method of the combined sensor in FIG. 5; FIG.
图10为图6中步骤S13后的结构示意图;FIG. 10 is a schematic diagram of the structure after step S13 in FIG. 6;
图11为图7中步骤S11的中间结构示意图;FIG. 11 is a schematic diagram of an intermediate structure of step S11 in FIG. 7;
图12为图7中步骤S11后的结构示意图;FIG. 12 is a schematic diagram of the structure after step S11 in FIG. 7;
图13为图7中步骤S111后的结构示意图;FIG. 13 is a schematic diagram of the structure after step S111 in FIG. 7;
图14为图8中步骤S115后的结构示意图;FIG. 14 is a schematic diagram of the structure after step S115 in FIG. 8;
图15为图8中步骤S12a后的结构示意图。Fig. 15 is a schematic diagram of the structure after step S12a in Fig. 8.
图16为图9中步骤S112a后的结构示意图;FIG. 16 is a schematic diagram of the structure after step S112a in FIG. 9;
图17为图9中步骤S113和步骤S112b后的结构示意图;FIG. 17 is a schematic diagram of the structure after step S113 and step S112b in FIG. 9;
图18为图9中步骤S22后的结构示意图。FIG. 18 is a schematic diagram of the structure after step S22 in FIG. 9.
附图标号说明:Attached icon number description:
本申请目的的实现、功能特点及优点将结合实施例,参照附图做进一步说明。The realization, functional characteristics, and advantages of the purpose of this application will be further described in conjunction with the embodiments and with reference to the accompanying drawings.
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本申请的一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of this application.
需要说明,本申请实施例中所有方向性指示(诸如上、下、左、右、前、后……)仅用于解释在某一特定姿态(如附图所示)下各部件之间的相对位置关系、运动情况等,如果该特定姿态发生改变时,则该方向性指示也相应地随之改变。It should be noted that all the directional indicators (such as up, down, left, right, front, back...) in the embodiments of this application are only used to explain the relationship between the components in a specific posture (as shown in the figure). If the relative position relationship, movement situation, etc. change, the directional indication will change accordingly.
另外,在本申请中如涉及“第一”、“第二”等的描述仅用于描述目的,而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本申请的描述中,“多个”的含义是至少两个,例如两个,三个等,除非另有明确具体的限定。In addition, the descriptions related to "first", "second", etc. in this application are only for descriptive purposes, and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present application, "a plurality of" means at least two, such as two, three, etc., unless specifically defined otherwise.
在本申请中,除非另有明确的规定和限定,术语“连接”、“固定”等应做广义理解,例如,“固定”可以是固定连接,也可以是可拆卸连接,或成一体;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通或两个元件的相互作用关系,除非另有明确的限定。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本申请中的具体含义。In this application, unless otherwise clearly specified and limited, the terms "connected", "fixed", etc. should be understood in a broad sense. For example, "fixed" can be a fixed connection, a detachable connection, or a whole; It can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be an internal communication between two components or an interaction relationship between two components, unless specifically defined otherwise. For those of ordinary skill in the art, the specific meanings of the above-mentioned terms in this application can be understood according to specific circumstances.
另外,本申请各个实施例之间的技术方案可以相互结合,但是必须是以本领域普通技术人员能够实现为基础,当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在,也不在本申请要求的保护范围之内。In addition, the technical solutions between the various embodiments of the present application can be combined with each other, but they must be based on what can be achieved by a person of ordinary skill in the art. When the combination of technical solutions is contradictory or cannot be achieved, it should be considered that the combination of such technical solutions It does not exist and is not within the scope of protection required by this application.
本申请提出一种组合传感器100。This application proposes a combined sensor 100.
请参阅图1至图4,在本申请组合传感器100一实施例中,组合传感器100包括:封装体10,封装体10包括基板12和盖板19,盖板19与基板12通过键合结构键合连接,且围合形成容置腔11;环境传感器30,环境传感器30包括环境传感芯片31和与环境传感芯片31电性连接的第一集成电路芯片32,环境传感芯片31和第一集成电路芯片32均设于容置腔11内;以及声学传感器40,声学传感器40包括麦克风芯片41和与麦克风芯片41电性连接的第二集成电路芯片42,麦克风芯片41和第二集成电路芯片42均设于容置腔11内。1 to 4, in an embodiment of the combined sensor 100 of the present application, the combined sensor 100 includes: a package body 10, the package body 10 includes a substrate 12 and a cover plate 19, the cover plate 19 and the substrate 12 are bonded by a bonding structure The environment sensor 30 includes an environment sensor chip 31 and a first integrated circuit chip 32 electrically connected to the environment sensor chip 31, and the environment sensor chip 31 and the first integrated circuit chip 32 are electrically connected to the environment sensor chip 31. An integrated circuit chip 32 is arranged in the accommodating cavity 11; and an acoustic sensor 40, which includes a microphone chip 41 and a second integrated circuit chip 42 electrically connected to the microphone chip 41, the microphone chip 41 and the second integrated circuit The chips 42 are all arranged in the accommodating cavity 11.
具体地,这里基板12和盖板19的材质一般均采用绝缘材质,比如硅基板12;二者通过键合结构结合连接,其中键合结构可以为金锡键合结构,二者键合连接之后便围合形成了容置腔11。环境传感器30和声学传感器40集成在芯片上,并在芯片中实现电性连接,以降低外部信号对环境传感器30和声学传感器40的影响,减小了噪音引入,降低了功耗。并且将集成后的环境传感器30和声学传感器40贴装在基板12的上表面,且均设置于该容置腔11内,这样可以省去壳体的设置,有利于进一步减小组合传感器100的厚度,从而实现其小型化。这里环境传感芯片31和麦克风芯片41均为MEMS芯片,其中,环境传感器30可以为气压传感器、温度传感器、湿度传感器为或光学传感器,对应的环境传感芯片31可以是气压传感芯片、温度传感芯片、湿度传感芯片或光学传感芯片,用来感应外界环境的各种参数变化,第一集成电路(ASIC)芯片用于对环境传感芯片31输出的信号进行处理,从而使得环境传感器30具备检测外界环境变化的功能。声学传感器40的麦克风芯片41材质一般为单晶硅、多晶硅或者其他氮化硅材料,用来感知和检测声源,可将声音信号转换为电信号进行传输,第二集成电路芯片42用于对麦克风芯片41输出的信号进行处理并为麦克风芯片41提供电压,从而使得声学传感器40为电子设备提供声功能。Specifically, the material of the substrate 12 and the cover plate 19 are generally insulating materials, such as silicon substrate 12; the two are connected by a bonding structure, wherein the bonding structure can be a gold-tin bonding structure, and the two are connected after bonding. The accommodating cavity 11 is formed together. The environmental sensor 30 and the acoustic sensor 40 are integrated on the chip and are electrically connected in the chip to reduce the influence of external signals on the environmental sensor 30 and the acoustic sensor 40, reduce the introduction of noise, and reduce the power consumption. And the integrated environmental sensor 30 and acoustic sensor 40 are mounted on the upper surface of the substrate 12, and they are both arranged in the accommodating cavity 11, so that the setting of the housing can be omitted, which is beneficial to further reduce the cost of the combined sensor 100 Thickness, so as to achieve its miniaturization. Here, the environmental sensor chip 31 and the microphone chip 41 are both MEMS chips, where the environmental sensor 30 can be an air pressure sensor, a temperature sensor, a humidity sensor or an optical sensor, and the corresponding environmental sensor chip 31 can be an air pressure sensor chip, a temperature sensor, or an optical sensor. The sensor chip, humidity sensor chip or optical sensor chip is used to sense changes in various parameters of the external environment. The first integrated circuit (ASIC) chip is used to process the signal output by the environmental sensor chip 31, so as to make the environment The sensor 30 has a function of detecting changes in the external environment. The microphone chip 41 of the acoustic sensor 40 is generally made of monocrystalline silicon, polycrystalline silicon or other silicon nitride materials, which are used to sense and detect sound sources, and can convert sound signals into electrical signals for transmission. The second integrated circuit chip 42 is used to The signal output by the microphone chip 41 is processed and provides a voltage for the microphone chip 41, so that the acoustic sensor 40 provides an acoustic function for the electronic device.
需要说明的是,在第一键合结构123和第二键合结构194的外围设有绝缘胶层,以屏蔽外界电磁干扰。并且,环境传感芯片31、麦克风芯片41、第一集成电路芯片32及第二集成电路芯片42设置位置可参照图1所示,当然地,其设置位置可以互换,或者是其他的设置方式,均在本申请的保护范围内。It should be noted that an insulating glue layer is provided on the periphery of the first bonding structure 123 and the second bonding structure 194 to shield external electromagnetic interference. In addition, the setting positions of the environment sensor chip 31, the microphone chip 41, the first integrated circuit chip 32, and the second integrated circuit chip 42 can be referred to as shown in FIG. , Are all within the protection scope of this application.
因此,可以理解的,本申请的技术方案,通过将环境传感器30和声学传感器40集成在芯片上,将芯片贴装在基板12的表面,并在芯片中实现电性连接,采用键合结构将盖板19键合连接于基板12后,便围合形成了具有容置腔11的封装体10,集成后的环境传感器30和声学传感器40均设置于该容置腔11内。这里封装体10相当于壳体的作用,如此便可省去壳体的设置,这样有利于进一步减小组合传感器100的厚度,实现其小型化。同时,也降低了外部信号对环境传感器30和声学传感器40的影响,减小了噪音引入,降低了功耗。Therefore, it is understandable that the technical solution of the present application integrates the environmental sensor 30 and the acoustic sensor 40 on the chip, mounts the chip on the surface of the substrate 12, and realizes electrical connection in the chip, and uses a bonding structure to connect After the cover plate 19 is bonded and connected to the base plate 12, a package body 10 with a containing cavity 11 is enclosed and formed, and the integrated environmental sensor 30 and the acoustic sensor 40 are both arranged in the containing cavity 11. Here, the package body 10 functions as a shell, so that the setting of the shell can be omitted, which is beneficial to further reduce the thickness of the combined sensor 100 and realize its miniaturization. At the same time, the influence of external signals on the environmental sensor 30 and the acoustic sensor 40 is also reduced, the introduction of noise is reduced, and the power consumption is reduced.
需要说明的是,现有的组合传感器100由于存在壳体,其厚度一般在1mm以上,而本申请的组合传感器100,由于不用设置壳体,则其整体厚度可以控制在0.8mm以内,故本申请的组合传感器100的厚度得到了有效地减小。It should be noted that the existing combined sensor 100 has a housing, and its thickness is generally above 1 mm. However, since the combined sensor 100 of the present application does not need to be provided with a housing, its overall thickness can be controlled within 0.8 mm. The thickness of the combined sensor 100 of the application is effectively reduced.
在本申请的一实施例中,容置腔11包括相互独立的容置腔111、第二子容置腔112、第三子容置腔113及第四子容置腔114,所述环境传感芯片31设于所述容置腔111内,所述麦克风芯片41设于所述第二子容置腔112内,所述第一集成电路芯片32设于所述第三子容置腔113内,所述第二集成电路芯片42设于所述第四子容置腔114内。In an embodiment of the present application, the accommodating cavity 11 includes a accommodating cavity 111, a second sub-accommodating cavity 112, a third sub-accommodating cavity 113, and a fourth sub-accommodating cavity 114 that are independent of each other. The sensor chip 31 is arranged in the accommodating cavity 111, the microphone chip 41 is arranged in the second sub-accommodating cavity 112, and the first integrated circuit chip 32 is arranged in the third sub-accommodating cavity 113 Inside, the second integrated circuit chip 42 is disposed in the fourth sub-accommodating cavity 114.
这里将环境传感芯片31、麦克风芯片41、第一集成电路芯片32及第二集成电路芯片42分区设置,分别设置在独立的容置腔11内,这样可以达到隔离和屏蔽的效果,从而减少环境传感器30和声学传感器40之间的电磁干扰,减少噪音引入。Here, the environment sensor chip 31, the microphone chip 41, the first integrated circuit chip 32, and the second integrated circuit chip 42 are arranged in zones, and are respectively arranged in the independent accommodating cavity 11, so that the effect of isolation and shielding can be achieved, thereby reducing The electromagnetic interference between the environmental sensor 30 and the acoustic sensor 40 reduces the introduction of noise.
在本申请的一实施例中,环境传感器30为气压传感器,盖板19还开设有连通容置腔111的第一通孔191。这里环境传感器30为气压传感器,相应的,环境传感芯片31为MEMS气压芯片,下面主要以气压传感器为例进行描述。第一通孔191主要用于感应外界环境的气压变化。In an embodiment of the present application, the environment sensor 30 is an air pressure sensor, and the cover plate 19 is also provided with a first through hole 191 communicating with the accommodating cavity 111. Here, the environmental sensor 30 is an air pressure sensor. Correspondingly, the environmental sensor chip 31 is a MEMS air pressure chip. The following description mainly takes an air pressure sensor as an example. The first through hole 191 is mainly used to sense the air pressure change of the external environment.
在一实施例中,盖板19还开设有连通第二子容腔的第二通孔192。这里第二通孔192主要用于感知和检测外界的声源。In an embodiment, the cover plate 19 is further provided with a second through hole 192 communicating with the second sub-chamber. Here, the second through hole 192 is mainly used for sensing and detecting external sound sources.
请再次参阅图2,定义基板12的厚度方向为上下方向,且朝向盖板19的方向为上方向,背向盖板19的方向为下方向,下面描述以此为准。Please refer to FIG. 2 again. The thickness direction of the substrate 12 is defined as the up-down direction, the direction facing the cover plate 19 is the upward direction, and the direction away from the cover plate 19 is the downward direction. The following description shall prevail.
在本申请的一实施例中,基板12的上表面设置有第一电极层121,第一电极层121的上表面设置有第一键合结构123;盖板19的下表面设置有第二电极层193,第二电极层193的下表面设置有与第一键合结构123相对应的第二键合结构194;第一键合结构123与第二键合结构194键合连接,并与基板12和盖板19共同围合形成容置腔11。In an embodiment of the present application, the upper surface of the substrate 12 is provided with a first electrode layer 121, the upper surface of the first electrode layer 121 is provided with a first bonding structure 123; the lower surface of the cover plate 19 is provided with a second electrode The lower surface of the second electrode layer 193 is provided with a second bonding structure 194 corresponding to the first bonding structure 123; the first bonding structure 123 is bonded to the second bonding structure 194, and is connected to the substrate 12 and the cover plate 19 enclose together to form the accommodating cavity 11.
这里第一电极层121和第二电极层193均采用金属层,比如铜层,第一电极层121和第二电极层193相对设置。第一键合结构123和第二键合结构194相对设置,且二者中的之一可以为金键合结构,其中的另一为锡键合结构,这样,盖板19和基板12通过金锡键合结构便可得到封装体10,并且,第一键合结构123、第二键合结构194、基板12及盖板19围合形成了容置腔11,用于容置环境传感器30和声学传感器40。Here, both the first electrode layer 121 and the second electrode layer 193 are made of metal layers, such as a copper layer, and the first electrode layer 121 and the second electrode layer 193 are arranged opposite to each other. The first bonding structure 123 and the second bonding structure 194 are arranged oppositely, and one of the two may be a gold bonding structure, and the other of the two may be a tin bonding structure. In this way, the cover plate 19 and the substrate 12 pass through the gold-tin bonding structure. The package body 10 can be obtained, and the first bonding structure 123, the second bonding structure 194, the substrate 12, and the cover 19 are enclosed to form an accommodating cavity 11 for accommodating the environmental sensor 30 and the acoustic sensor 40.
需要说明的是,第一键合结构123的厚度一般控制在0.4mm-0.6mm范围内,这样可以有利于减小组合传感器100的整体厚度。It should be noted that the thickness of the first bonding structure 123 is generally controlled within a range of 0.4 mm-0.6 mm, which can help reduce the overall thickness of the combined sensor 100.
在一实施例中,在本申请的一实施例中,第一电极层121的上表面还设置有第一绝缘层124,第一绝缘层124的上表面设置有导电层125,导电层125的上表面设置有第二绝缘层126;组合传感器100还包括第一金属走线13、第二金属走线14、第三金属走线15及第四金属走线16,第一金属走线13、第二金属走线14、第三金属走线15及第四金属走线16均贯穿第二绝缘层126的上下表面,且均与导电层125电性抵接;环境传感芯片31贴装于第二绝缘层126的上表面,并电性连接于第一金属走线13;麦克风芯片41贴装于第二绝缘层126的上表面,并电性连接于第二金属走线14;第一集成电路芯片32贴装于第二绝缘层126的上表面,并电性连接于第三金属走线15;第二集成电路芯片42贴装于述第二绝缘层126的上表面,并电性连接于第四金属走线16。In an embodiment, in an embodiment of the present application, the upper surface of the first electrode layer 121 is further provided with a first insulating layer 124, and the upper surface of the first insulating layer 124 is provided with a conductive layer 125. The upper surface is provided with a second insulating layer 126; the combined sensor 100 further includes a first metal wiring 13, a second metal wiring 14, a third metal wiring 15 and a fourth metal wiring 16, the first metal wiring 13, The second metal trace 14, the third metal trace 15 and the fourth metal trace 16 all penetrate the upper and lower surfaces of the second insulating layer 126, and all electrically abut the conductive layer 125; the environmental sensor chip 31 is mounted on The upper surface of the second insulating layer 126 is electrically connected to the first metal trace 13; the microphone chip 41 is mounted on the upper surface of the second insulating layer 126 and is electrically connected to the second metal trace 14; The integrated circuit chip 32 is mounted on the upper surface of the second insulating layer 126 and is electrically connected to the third metal trace 15; the second integrated circuit chip 42 is mounted on the upper surface of the second insulating layer 126 and is electrically connected Connected to the fourth metal trace 16.
具体地,这里第一绝缘层124和第二绝缘层126的材质均可采用硅材料,导电层125通常采用铜层。第二绝缘层126的上表面开设有贯穿其下表面且显露导电层125的第一走线孔1261、第二走线孔1262、第三走线孔1263及第四走线孔1264,每一走线孔内对应设置有第一金属走线13、第二金属走线14、第三金属走线15及第四金属走线16,这样每一金属走线的下端均与导电层125电性抵接,且每一金属走线的上端均显露于第二绝缘层126的上表面。环境传感芯片31通过芯片胶贴装于第二绝缘层126的上表面,并通过导线电性连接于第一金属走线13;麦克风芯片41通过芯片胶贴装于第二绝缘层126的上表面,并通过导线电性连接于第二金属走线14;第一集成电路芯片32贴装于第二绝缘层126的上表面,且其底部的引线电性连接于第三金属走线15;第二集成电路芯片42贴装于述第二绝缘层126的上表面,其底部的引线电性连接于第四金属走线16。这样便可完成环境传感器30和声学传感器40的装配,由于组合传感器100中芯片之间是通过下面的金属走线进行电性连接,这样可以使得走线排布较为规整,避免相互之间产生干扰,保证了其安全性。并且,由于每一芯片是分区独立分布,这样就不必要开设通孔进行走线,有效地避免了相互之间的电磁干扰。Specifically, the first insulating layer 124 and the second insulating layer 126 can be made of silicon material, and the conductive layer 125 is usually a copper layer. The upper surface of the second insulating layer 126 is provided with a first wiring hole 1261, a second wiring hole 1262, a third wiring hole 1263, and a fourth wiring hole 1264 penetrating the lower surface and exposing the conductive layer 125, each Correspondingly, a first metal trace 13, a second metal trace 14, a third metal trace 15 and a fourth metal trace 16 are provided in the trace hole, so that the lower end of each metal trace is electrically connected to the conductive layer 125 Abutting, and the upper end of each metal trace is exposed on the upper surface of the second insulating layer 126. The environmental sensor chip 31 is mounted on the upper surface of the second insulating layer 126 through die glue, and is electrically connected to the first metal trace 13 through a wire; the microphone chip 41 is mounted on the second insulating layer 126 through die glue The first integrated circuit chip 32 is mounted on the upper surface of the second insulating layer 126, and the lead at the bottom is electrically connected to the third metal wiring 15; The second integrated circuit chip 42 is mounted on the upper surface of the second insulating layer 126, and the lead at the bottom thereof is electrically connected to the fourth metal trace 16. In this way, the assembly of the environmental sensor 30 and the acoustic sensor 40 can be completed. Since the chips in the combined sensor 100 are electrically connected through the metal wires below, this can make the wire arrangement more regular and avoid mutual interference. , To ensure its safety. In addition, since each chip is distributed independently, it is unnecessary to open through holes for wiring, effectively avoiding mutual electromagnetic interference.
可以理解,导电层125一般设置有两个,一个导电层125对应设置于环境传感芯片31和第一集成电路芯片32的下方,并通过金属走线电性连接于环境传感芯片31和第一集成电路芯片32;另一个导电层125对应设置于麦克风芯片41和第二集成电路芯片42的下方,并通过金属走线电性连接于麦克风芯片41和第二集成电路芯片42。如此可以更有效地实现其电性连接,且使得连接导线长度较短,金属走线的设置操作较为方便。It can be understood that two conductive layers 125 are generally provided. One conductive layer 125 is correspondingly provided under the environmental sensor chip 31 and the first integrated circuit chip 32, and is electrically connected to the environmental sensor chip 31 and the first integrated circuit chip 32 through metal traces. An integrated circuit chip 32; another conductive layer 125 is correspondingly disposed under the microphone chip 41 and the second integrated circuit chip 42, and is electrically connected to the microphone chip 41 and the second integrated circuit chip 42 through metal traces. In this way, the electrical connection can be realized more effectively, and the length of the connecting wire is shorter, and the setting operation of the metal wiring is more convenient.
在一实施例中,基板12的上表面还设置有焊盘结构122,组合传感器100还包括第五金属走线17和第六金属走线18,第五金属走线17和第六金属走线18均依次贯穿第一绝缘层124和第二绝缘层126,且均与焊盘结构122电性抵接,第五金属走线17背离焊盘结构122的端部电性连接于所述第一集成电路芯片32,第六金属走线18背离焊盘结构122的端部电性连接于第二集成电路芯片42;基板12的下表面对应焊盘结构122还开设有显露孔,以显露焊盘结构122。In an embodiment, the upper surface of the substrate 12 is further provided with a pad structure 122, the combined sensor 100 further includes a fifth metal wiring 17 and a sixth metal wiring 18, and a fifth metal wiring 17 and a sixth metal wiring 18 all penetrate the first insulating layer 124 and the second insulating layer 126 in sequence, and both electrically abut the pad structure 122. The end of the fifth metal trace 17 away from the pad structure 122 is electrically connected to the first insulating layer 124 and the second insulating layer 126. The integrated circuit chip 32, the end of the sixth metal trace 18 away from the pad structure 122 is electrically connected to the second integrated circuit chip 42; the lower surface of the substrate 12 is also provided with exposure holes corresponding to the pad structure 122 to expose the pads Structure 122.
具体地,焊盘结构122的材质一般是铜材质,第二绝缘层126对应焊盘结构122的上表面开设有第五走线孔1265和第六走线孔1266,第五走线孔1265和第六走线孔1266均贯穿第一绝缘层124,并均显露出焊盘结构122。第五金属走线17和第六金属走线18分布设置于第五走线孔1265和第六走线孔1266内,且第五金属走线17和第六金属走线18的下端均电性抵接于焊盘结构122,其上端均显露于第二绝缘层126的上表面,并分布电性连接于第一集成电路芯片32和第二集成电路芯片42底部的引线。相应地,基板12的下表面对应焊盘结构122结构开设有显露孔,使得焊盘结构122显露,这样可以通过焊盘结构122快速导走静电携带的电荷,有效提升组合传感器100的抗静电能力。Specifically, the material of the pad structure 122 is generally copper, and the second insulating layer 126 is provided with a fifth wiring hole 1265 and a sixth wiring hole 1266 corresponding to the upper surface of the pad structure 122, and the fifth wiring hole 1265 and The sixth wiring holes 1266 all penetrate the first insulating layer 124 and all expose the pad structure 122. The fifth metal wiring 17 and the sixth metal wiring 18 are distributed in the fifth wiring hole 1265 and the sixth wiring hole 1266, and the lower ends of the fifth metal wiring 17 and the sixth metal wiring 18 are electrically equal The upper ends of the bonding pad structure 122 are exposed on the upper surface of the second insulating layer 126, and the leads electrically connected to the bottoms of the first integrated circuit chip 32 and the second integrated circuit chip 42 are distributed. Correspondingly, the bottom surface of the substrate 12 is provided with exposure holes corresponding to the structure of the pad structure 122, so that the pad structure 122 is exposed, so that the electrostatic charge carried by the pad structure 122 can be quickly conducted away, and the antistatic ability of the combined sensor 100 is effectively improved. .
在一实施例中,焊盘结构122对应于第一集成电路芯片32和第二集成电路芯片42设置。In an embodiment, the pad structure 122 is arranged corresponding to the first integrated circuit chip 32 and the second integrated circuit chip 42.
这里将焊盘结构122对应设置于第一集成电路芯片32和第二集成电路芯片42的下方,可以更加快速地将静电携带的电荷导出外部,更有效提升组合传感器100的抗静电能力;同时金属走线的长度较短,金属走线的设置操作较为方便。Here, the bonding pad structure 122 is correspondingly arranged under the first integrated circuit chip 32 and the second integrated circuit chip 42, which can more quickly export the electrostatic charge to the outside, and more effectively improve the antistatic ability of the combined sensor 100; at the same time, the metal The length of the trace is short, and the setting operation of the metal trace is more convenient.
本申请还提出一种组合传感器100的制作方法,请参阅图5,在本申请组合传感器100的制作方法一实施例中,组合传感器100的制作方法包括以下步骤:The present application also proposes a manufacturing method of the combined sensor 100. Please refer to FIG. 5. In an embodiment of the manufacturing method of the combined sensor 100 of the present application, the manufacturing method of the combined sensor 100 includes the following steps:
步骤S10,提供基板12和盖板19;Step S10, providing the base plate 12 and the cover plate 19;
步骤S20,在所述基板12的上表面制作环境传感器30和声学传感器40,环境传感器30包括环境传感芯片31和与环境传感芯片31电性连接的第一集成电路芯片32,声学传感器40包括麦克风芯片41和与麦克风芯片41电性连接的第二集成电路芯片42;Step S20, an environment sensor 30 and an acoustic sensor 40 are fabricated on the upper surface of the substrate 12. The environment sensor 30 includes an environment sensor chip 31 and a first integrated circuit chip 32 electrically connected to the environment sensor chip 31, and the acoustic sensor 40 Including a microphone chip 41 and a second integrated circuit chip 42 electrically connected to the microphone chip 41;
步骤S30,将所述盖板19键合连接于所述基板12,以围合形成容置腔11,所述环境传感器30和所述声学传感器40均位于所述容置腔11内。Step S30, bonding the cover plate 19 to the base plate 12 to enclose and form an accommodating cavity 11, and the environmental sensor 30 and the acoustic sensor 40 are both located in the accommodating cavity 11.
具体地,首先采用封装方法制作具有容置腔11的封装体10,其封装方法通常采用金锡键合的封装方法,当然地,也可采用其他合理且有效的封装方法。之后在容置腔11内进行制作环境传感器30和声学传感器40,在制作时,将环境传感器30和声学传感器40集成在芯片上,并在芯片中实现电性连接,可以降低外部信号对环境传感器30和声学传感器40的影响,减小了噪音引入,降低了功耗。由于集成制作后的环境传感器30和声学传感器40均位于封装体10的容置腔11内,则可以省去壳体的制作,这样有利于进一步减小组合传感器100的厚度,实现其小型化。Specifically, the package body 10 with the accommodating cavity 11 is first produced by the packaging method. The packaging method usually adopts the packaging method of gold-tin bonding. Of course, other reasonable and effective packaging methods can also be used. Afterwards, the environmental sensor 30 and the acoustic sensor 40 are manufactured in the accommodating cavity 11. During the manufacturing, the environmental sensor 30 and the acoustic sensor 40 are integrated on the chip, and electrical connections are realized in the chip, which can reduce the impact of external signals on the environmental sensor. The influence of 30 and the acoustic sensor 40 reduces the introduction of noise and reduces power consumption. Since the integrated environment sensor 30 and the acoustic sensor 40 are both located in the accommodating cavity 11 of the package body 10, the manufacture of the shell can be omitted, which is beneficial to further reduce the thickness of the combined sensor 100 and realize its miniaturization.
请参阅图6、图2、图10至图15,在本申请的一实施例中,步骤S20之前,还包括:Please refer to FIG. 6, FIG. 2, and FIG. 10 to FIG. 15. In an embodiment of the present application, before step S20, the method further includes:
步骤S11,在基板12的上表面制作第一电极层121;Step S11, forming a first electrode layer 121 on the upper surface of the substrate 12;
步骤S12,在第一电极层121的上表面制作第一键合结构123;Step S12, forming a first bonding structure 123 on the upper surface of the first electrode layer 121;
步骤S13,在盖板19的下表面制作第二电极层193,并在第二电极层193的下表面制作第二键合结构194;Step S13, forming a second electrode layer 193 on the lower surface of the cover plate 19, and forming a second bonding structure 194 on the lower surface of the second electrode layer 193;
相应地,步骤S30包括Correspondingly, step S30 includes
步骤S30a,将基板12的第一键合结构123对准盖板19的所述第二键合结构194,进行键合封装,得到封装体10。In step S30a, the first bonding structure 123 of the substrate 12 is aligned with the second bonding structure 194 of the cover 19 to perform bonding and packaging, and the package body 10 is obtained.
具体的,这里基板12和盖板19均可采用硅基板12,第一电极层121和第二电极层193均可以采用铜层,且二者相对设置。在制作时,先在基板12的上表面沉积一层铜层,在铜层的上表面压介质材料层,介质材料层为绝缘层,之后采用光照刻蚀工艺腐蚀去掉部分介质材料层,并刻蚀铜层,之后去掉介质材料层,便可得到第一电极层121。按照同样的方法在盖板19的下表面制作得到第二电极层193。第一键合结构123和第二接合结构相对应设置,且二者中的之一为金键合结构,二者中的之另一为锡键合结构。最后,将第一键合结构123对准第二键合结构194,通过下压加热的方式将第一键合结构123和第二键合结构194粘合键合连接在一起,便可得到封装体10。可以理解的,在制作完成后,第一键合结构123、第二键合结构194、基板12及盖板19围成形成了封装体10的容置腔11。Specifically, here, both the substrate 12 and the cover plate 19 can adopt a silicon substrate 12, and both the first electrode layer 121 and the second electrode layer 193 can adopt a copper layer, and they are arranged opposite to each other. During production, a copper layer is first deposited on the upper surface of the substrate 12, and a dielectric material layer is pressed on the upper surface of the copper layer. The dielectric material layer is an insulating layer. Then, a light etching process is used to etch away part of the dielectric material layer and etched. The copper layer is etched, and then the dielectric material layer is removed to obtain the first electrode layer 121. The second electrode layer 193 is fabricated on the lower surface of the cover plate 19 in the same way. The first bonding structure 123 and the second bonding structure are arranged correspondingly, and one of the two is a gold bonding structure, and the other of the two is a tin bonding structure. Finally, the first bonding structure 123 is aligned with the second bonding structure 194, and the first bonding structure 123 and the second bonding structure 194 are adhesively bonded together by pressing and heating to obtain the package.体10。 Body 10. It can be understood that after the manufacturing is completed, the first bonding structure 123, the second bonding structure 194, the substrate 12 and the cover 19 are formed into the accommodating cavity 11 of the package body 10.
请参阅图7和图13,步骤S11之后,还包括:Please refer to Figure 7 and Figure 13, after step S11, it also includes:
步骤S111,在所述第一电极层121的上表面沉积第一绝缘层124,并在所述第一绝缘层124的上表面制作导电层125;Step S111, depositing a first insulating layer 124 on the upper surface of the first electrode layer 121, and forming a conductive layer 125 on the upper surface of the first insulating layer 124;
步骤S112,在所述导电层125的上表面沉积第二绝缘层126,并腐蚀所述第二绝缘层126,得到显露所述导电层125的第一过线孔、第二走线孔1262、第三走线孔1263及第四走线孔1264;In step S112, a second insulating layer 126 is deposited on the upper surface of the conductive layer 125, and the second insulating layer 126 is etched to obtain a first via hole and a second wiring hole 1262 that expose the conductive layer 125. The third wiring hole 1263 and the fourth wiring hole 1264;
步骤S113,分别在所述第一走线孔1261、所述第二走线孔1262、所述第三走线孔1263及所述第四走线孔1264内电镀制作第一金属走线13、第二金属走线14、第三金属走线15及第四金属走线16;Step S113, electroplating the first metal wiring 13 and the fourth wiring hole 1264 in the first wiring hole 1261, the second wiring hole 1262, the third wiring hole 1263, and the fourth wiring hole 1264. The second metal trace 14, the third metal trace 15, and the fourth metal trace 16;
相应的,请参阅图18,步骤S20包括:Correspondingly, please refer to FIG. 18. Step S20 includes:
步骤S21,在所述第二绝缘层126的上表面分别贴装所述环境传感芯片31、所述麦克风芯片41、所述第一集成电路芯片32及所述第二集成电路芯片42,并将所述环境传感芯片31与所述第一金属走线13通过导线电性连接,将所述麦克风芯片41与所述第二金属走线14通过导线电性连接,并将所述第一集成电路芯片32与所述第三金属走线15电性连接;将所述第二集成电路芯片42与所述第四金属走线16电性连接。Step S21: Mount the environmental sensor chip 31, the microphone chip 41, the first integrated circuit chip 32, and the second integrated circuit chip 42 on the upper surface of the second insulating layer 126, and The environment sensor chip 31 and the first metal wiring 13 are electrically connected through wires, the microphone chip 41 and the second metal wiring 14 are electrically connected through wires, and the first The integrated circuit chip 32 is electrically connected to the third metal trace 15; the second integrated circuit chip 42 is electrically connected to the fourth metal trace 16.
这里第一绝缘层124和第二绝缘层126均可采用硅基材料,导电层125采用铜层,第一过线孔、第二走线孔1262、第三走线孔1263及第四走线孔1264是通过采用光照刻蚀工艺刻蚀第二绝缘层126得到的,且均显露下面的导电层125。第一金属走线13、第二金属走线14、第三金属走线15及第四金属走线16的材质可以采用铜材质或锡材质,并且其下端均电性抵接于下面的导电层125,上端均显露于第二绝缘层126的上表面,用于电性连接气压传感器和麦克风传感器。在制作环境传感器30和声学传感器40时,先对环境传感芯片31和麦克风芯片41的下表面进行点胶操作,制作得到芯片胶,然后采用贴片工艺在第二绝缘层126的上表面贴上环境传感芯片31,并进行WB打线工艺,将环境传感芯片31通过导线电性连接于第一金属走线13的上端;采用同样的方法进行在第二绝缘层126的上表面贴上麦克风芯片41,并将麦克风芯片41通过导线电性连接于第二金属走线14的上端;之后在第二绝缘层126对应第三金属走线15和第四金属走线16的上表面进行贴装第一集成电路芯片32和第二集成电路芯片42,并进行加热处理,便可实现第一集成电路芯片32和第二集成电路芯片42与第三金属走线15和第四金属走线16的电性导通。如此,便可完成环境传感器30和声学传感器40的贴装操作,由于组合传感器100中芯片之间是通过下面的金属走线进行电性连接,这样可以使得走线排布较为规整,避免相互之间产生干扰,保证了其安全性。并且,由于每一芯片是分区独立分布,这样就不必要开设通孔进行走线,有效地避免了相互之间的电磁干扰。Here, both the first insulating layer 124 and the second insulating layer 126 can be made of silicon-based materials, and the conductive layer 125 can be a copper layer. The first via, the second via 1262, the third via 1263, and the fourth The holes 1264 are obtained by etching the second insulating layer 126 using a light etching process, and all expose the conductive layer 125 below. The first metal trace 13, the second metal trace 14, the third metal trace 15 and the fourth metal trace 16 can be made of copper or tin, and their lower ends are electrically contacted with the conductive layer below. 125. The upper ends are all exposed on the upper surface of the second insulating layer 126 for electrically connecting the air pressure sensor and the microphone sensor. When manufacturing the environmental sensor 30 and the acoustic sensor 40, the lower surfaces of the environmental sensor chip 31 and the microphone chip 41 are firstly dispensed to produce a chip glue, and then the upper surface of the second insulating layer 126 is pasted using a patch process. The environment sensor chip 31 is mounted, and the WB wire bonding process is performed, and the environment sensor chip 31 is electrically connected to the upper end of the first metal trace 13 through a wire; the same method is used to paste on the upper surface of the second insulating layer 126 Upper microphone chip 41, and electrically connect the microphone chip 41 to the upper end of the second metal trace 14 through a wire; then, perform the process on the upper surface of the second insulating layer 126 corresponding to the third metal trace 15 and the fourth metal trace 16 The first integrated circuit chip 32 and the second integrated circuit chip 42 are mounted and heated to realize the first integrated circuit chip 32, the second integrated circuit chip 42 and the third metal trace 15 and the fourth metal trace 16's electrical conduction. In this way, the mounting operation of the environmental sensor 30 and the acoustic sensor 40 can be completed. Since the chips in the combined sensor 100 are electrically connected through the metal wires below, this can make the wire arrangement more regular and avoid mutual interference. Interference occurs between them, ensuring its safety. In addition, since each chip is distributed independently, it is unnecessary to open through holes for wiring, effectively avoiding mutual electromagnetic interference.
在一实施例中,请参阅图8和图14,步骤S111之后,还包括:In an embodiment, referring to FIG. 8 and FIG. 14, after step S111, the method further includes:
步骤S114,在所述第一绝缘层124的上表面开设有显露所述第一电极层121的电镀区域1241;Step S114, an electroplating area 1241 exposing the first electrode layer 121 is opened on the upper surface of the first insulating layer 124;
步骤S115,在所述第一绝缘层124的上表面制作光刻胶结构127,所述光刻胶结构127设置有光刻孔1271,所述光刻孔1271与所述电镀区域1241对应且相连通。In step S115, a photoresist structure 127 is fabricated on the upper surface of the first insulating layer 124. The photoresist structure 127 is provided with a photolithography hole 1271, and the photoresist hole 1271 corresponds to and is connected to the electroplating area 1241. Pass.
相应的,步骤S12包括:Correspondingly, step S12 includes:
步骤S12a,在所述电镀区域1241和所述光刻孔1271内制作第一键合结构123,并去掉所述第一键合结构123内侧的绝缘胶层。In step S12a, a first bonding structure 123 is fabricated in the electroplating area 1241 and the photolithography hole 1271, and the insulating glue layer inside the first bonding structure 123 is removed.
具体地,采用光照蚀刻工艺对第一绝缘层124进行蚀刻,得到显露第一电极层121的电镀区域1241。在第一绝缘层124的上表面匀光刻胶层,以作为非电镀第一键合结构123区域的保护区域,采用套刻工艺对光刻胶层进行光刻,得到具有光刻孔1271的光刻胶结构127,其中光刻孔1271与下方的电镀区域1241对应且相连通。之后才光刻孔1271和电镀区域1241内电镀金(或锡),并去掉内侧的光刻胶结构127后,便可制作得到第一键合结构123和外侧的光刻胶,光刻胶主要起到屏蔽外界干扰的作用。Specifically, the first insulating layer 124 is etched by a light etching process to obtain the electroplating area 1241 where the first electrode layer 121 is exposed. The photoresist layer is leveled on the upper surface of the first insulating layer 124 to serve as the protective area of the non-electroplating first bonding structure 123 area, and the photoresist layer is photoetched by the overetching process to obtain a photoresist layer with photoetching holes 1271 The photoresist structure 127, wherein the photoetching hole 1271 corresponds to and communicates with the plating area 1241 below. After the photoetching hole 1271 and the electroplating area 1241 are electroplated with gold (or tin), and the inner photoresist structure 127 is removed, the first bonding structure 123 and the outer photoresist can be fabricated. The photoresist is mainly Play a role in shielding external interference.
需要说明的是,光刻胶结构127的厚度一般控制在0.5mm-0.8mm范围内,这样可以有利于减小组合传感器100的整体厚度。It should be noted that the thickness of the photoresist structure 127 is generally controlled within a range of 0.5 mm-0.8 mm, which can help reduce the overall thickness of the combined sensor 100.
在一实施例中,请参阅图9、图11至图18,步骤S11之后,还包括:In an embodiment, please refer to FIG. 9 and FIG. 11 to FIG. 18. After step S11, the method further includes:
步骤S11a,在所述基板12的上表面制作焊盘结构122。Step S11a, forming a pad structure 122 on the upper surface of the substrate 12.
步骤S11b,在所述基板12对应于焊盘结构122的下表面进行蚀刻,以显露所述焊盘结构122。In step S11b, etching is performed on the lower surface of the substrate 12 corresponding to the pad structure 122 to expose the pad structure 122.
具体地,焊盘结构122的制作方法可参照上述第一电极层121的制作方法,即先在基板12的上表面沉积一层铜层,在铜层的上表面压介质材料层,介质材料层为绝缘层,之后采用光照刻蚀工艺腐蚀去掉部分介质材料层,并刻蚀铜层,之后去掉介质材料层,便可同时得到第一电极层121和焊盘结构122。之后采用光照刻蚀工艺对基板12的下表面进行蚀刻,蚀刻出显露焊盘结构122的外接焊盘区域,用于连接外部零件。Specifically, the manufacturing method of the pad structure 122 can refer to the manufacturing method of the first electrode layer 121 described above, that is, a copper layer is deposited on the upper surface of the substrate 12, and a dielectric material layer is pressed on the upper surface of the copper layer. It is an insulating layer. Afterwards, a part of the dielectric material layer is etched by a light etching process, and the copper layer is etched, and then the dielectric material layer is removed, and the first electrode layer 121 and the pad structure 122 can be obtained at the same time. Afterwards, the lower surface of the substrate 12 is etched by a light etching process to etch out the outer pad area of the exposed pad structure 122, which is used to connect external parts.
相应的,请参阅图9、图16至图18,步骤S112之后,还包括:Correspondingly, please refer to FIG. 9 and FIG. 16 to FIG. 18. After step S112, the method further includes:
步骤S112a,蚀刻所述第二绝缘层126的上表面,得到贯穿所述第一绝缘层124且显露所述焊盘结构122的第五走线孔1265和第六走线孔1266;Step S112a, etching the upper surface of the second insulating layer 126 to obtain a fifth wiring hole 1265 and a sixth wiring hole 1266 that penetrate the first insulating layer 124 and expose the pad structure 122;
步骤S112b,分别在所述第五走线孔1265和所述第六走线孔1266内制作第五金属走线17和第六金属走线18。Step S112b, forming a fifth metal wiring 17 and a sixth metal wiring 18 in the fifth wiring hole 1265 and the sixth wiring hole 1266, respectively.
具体地,采用光照刻蚀工艺对第二绝缘层126的上表面进行蚀刻,得到贯穿第一绝缘层124且显露焊盘结构122的第五走线孔1265和第六走线孔1266,之后在第五走线孔1265和第六走线孔1266中电镀金属分别得到第五金属走线17和第六金属走线18。可以理解的,第五金属走线17和第六金属走线18均对应于第一集成电路芯片32和第二集成电路芯片42设置,且均贯穿第一绝缘层124和第二绝缘层126,其下端均电性抵接于焊盘结构122,其上端均显露于第二绝缘层126的上表面,以用于电性连接第一集成电路芯片32和第二集成电路芯片42。Specifically, the upper surface of the second insulating layer 126 is etched using a light etching process to obtain the fifth wiring hole 1265 and the sixth wiring hole 1266 that penetrate the first insulating layer 124 and expose the pad structure 122, and then The fifth wire hole 1265 and the sixth wire hole 1266 are electroplated to obtain the fifth metal wire 17 and the sixth metal wire 18 respectively. It can be understood that the fifth metal wiring 17 and the sixth metal wiring 18 are both provided corresponding to the first integrated circuit chip 32 and the second integrated circuit chip 42, and both penetrate the first insulating layer 124 and the second insulating layer 126. The lower ends are electrically contacted with the bonding pad structure 122, and the upper ends are exposed on the upper surface of the second insulating layer 126 for electrically connecting the first integrated circuit chip 32 and the second integrated circuit chip 42.
相应的,步骤S21之后,还包括:Correspondingly, after step S21, it further includes:
步骤S22,将所述第一集成电路芯片32与所述第五金属走线17电性连接;将所述第二集成电路芯片42与所述第六金属走线18电性连接。Step S22, electrically connecting the first integrated circuit chip 32 and the fifth metal wiring 17; electrically connecting the second integrated circuit chip 42 and the sixth metal wiring 18.
在贴装第一集成电路芯片32和第二集成电路芯片42后,并进行加热处理后,第五金属走线17和第六金属走线18的上端分别与第一集成电路芯片32和第二集成电路芯片42电性导通。如此,可以通过焊盘结构122快速导走静电携带的电荷,有效提升组合传感器100的抗静电能力。After the first integrated circuit chip 32 and the second integrated circuit chip 42 are mounted and heated, the upper ends of the fifth metal trace 17 and the sixth metal trace 18 are respectively connected to the first integrated circuit chip 32 and the second integrated circuit chip 32 and the second integrated circuit chip. The integrated circuit chip 42 is electrically conductive. In this way, the electric charge carried by static electricity can be quickly conducted away through the pad structure 122, and the antistatic ability of the combined sensor 100 can be effectively improved.
在一实施例中,在本申请的一实施例中,所述容置腔11包括相互独立的容置腔111、第二子容置腔112、第三子容置腔113及第四子容置腔114;步骤S20包括:In an embodiment, in an embodiment of the present application, the accommodating cavity 11 includes a accommodating cavity 111, a second sub-accommodating cavity 112, a third sub-accommodating cavity 113, and a fourth sub-accommodating cavity that are independent of each other. Set cavity 114; Step S20 includes:
分别在所述容置腔111内、所述第二子容置腔112内、所述第三子容置腔113内及所述第四子容置腔114内贴装环境传感芯片31、麦克风芯片41、第一集成电路芯片32及第二集成电路芯片42。The environmental sensor chips 31, 31 are mounted in the accommodating cavity 111, the second sub accommodating cavity 112, the third sub accommodating cavity 113, and the fourth sub accommodating cavity 114, respectively. The microphone chip 41, the first integrated circuit chip 32, and the second integrated circuit chip 42.
在制作封装体10时,第一键合结构123、第二键合结构194、基板12及盖板19共同围合形成了相互独立的容置腔111、第二子容置腔112、第三子容置腔113及第四子容置腔114。将环境传感芯片31、麦克风芯片41、第一集成电路芯片32及第二集成电路芯片42分区设置,分别设置在独立的容置腔11内,这样可以达到隔离和屏蔽的效果,从而减少环境传感器30和声学传感器40之间的电磁干扰,减少噪音引入。When the package body 10 is manufactured, the first bonding structure 123, the second bonding structure 194, the substrate 12, and the cover 19 are jointly enclosed to form a mutually independent accommodating cavity 111, a second sub-accommodating cavity 112, and a third sub-accommodating cavity. The sub-accommodating cavity 113 and the fourth sub-accommodating cavity 114. The environment sensor chip 31, the microphone chip 41, the first integrated circuit chip 32 and the second integrated circuit chip 42 are arranged in partitions, and are respectively arranged in the independent accommodating cavity 11, so that the effect of isolation and shielding can be achieved, thereby reducing the environment. The electromagnetic interference between the sensor 30 and the acoustic sensor 40 reduces the introduction of noise.
在一实施例中,在本申请的一实施例中,环境传感器30为气压传感器,步骤S20之后,还包括:In an embodiment, in an embodiment of the present application, the environmental sensor 30 is an air pressure sensor, and after step S20, the method further includes:
在所述封装体10的表面开设第一通孔191和第二通孔192,所述第一通孔191连通所述容置腔111,所述第二通孔192连通所述第二子容置腔112。A first through hole 191 and a second through hole 192 are opened on the surface of the package body 10, the first through hole 191 communicates with the accommodating cavity 111, and the second through hole 192 communicates with the second sub-container.置cavity 112.
这里第一通孔191主要开设于封装体10的顶部,并连通于容置腔111,用于感应外界环境的气压变化。第二通孔192一般开设于封装体10的顶部,并连通于第二子容腔,用于感知和检测外界的声源。Here, the first through hole 191 is mainly opened on the top of the package body 10 and communicated with the accommodating cavity 111 for sensing the air pressure change of the external environment. The second through hole 192 is generally opened on the top of the package body 10 and communicated with the second sub-cavity for sensing and detecting external sound sources.
本申请还提出了一种电子设备,所述电子设备包括如前所述的组合传感器100,该组合传感器100的具体结构参照前述实施例。由于采用了前述所有实施例的全部技术方案,因此至少具有前述实施例的技术方案所带来的所有有益效果,在此不再一一赘述。The present application also proposes an electronic device that includes the combined sensor 100 as described above, and the specific structure of the combined sensor 100 refers to the foregoing embodiment. Since all the technical solutions of all the foregoing embodiments are adopted, it has at least all the beneficial effects brought about by the technical solutions of the foregoing embodiments, which will not be repeated here.
需要说明的是,电子设备一般为手机、手表、耳机、手环等,组合传感器100一般是安装于电子设备的壳体内,以使得电子设备实现更多的功能。It should be noted that the electronic devices are generally mobile phones, watches, earphones, bracelets, etc., and the combined sensor 100 is generally installed in the housing of the electronic device, so that the electronic device can achieve more functions.
以上所述仅为本申请的优选实施例,并非因此限制本申请的专利范围,凡是在本申请的申请构思下,利用本申请说明书及附图内容所作的等效结构变换,或直接/间接运用在其他相关的技术领域均包括在本申请的专利保护范围内。The above are only the preferred embodiments of this application, and do not limit the scope of this application. Under the application concept of this application, equivalent structural transformations made by using the content of the specification and drawings of this application, or direct/indirect use Other related technical fields are included in the scope of patent protection of this application.
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- 2020-12-10 WO PCT/CN2020/135386 patent/WO2021189963A1/en not_active Ceased
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| CN111307366A (en) | 2020-06-19 |
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