CN111286736A

CN111286736A - Preparation method of metal foil with carrier

Info

Publication number: CN111286736A
Application number: CN201811514599.5A
Authority: CN
Inventors: 苏陟
Original assignee: Guangzhou Fangbang Electronics Co Ltd
Current assignee: Guangzhou Fangbang Electronics Co Ltd
Priority date: 2018-12-10
Filing date: 2018-12-10
Publication date: 2020-06-16

Abstract

The invention relates to the technical field of materials, and discloses a preparation method of a metal foil with a carrier, which comprises the following steps of firstly, forming a carrier layer, then forming a barrier layer on one side of the carrier layer, then forming a stripping layer on the barrier layer, and finally forming a metal foil layer on the stripping layer, thereby obtaining the metal foil with the carrier; alternatively, first, a carrier layer is formed; and then, forming a release layer on one side of the carrier layer, forming a barrier layer on the release layer, and finally forming a metal foil layer on the barrier layer to obtain the metal foil with the carrier, wherein the diffusion depth from the carrier layer to the metal foil layer is less than or equal to 3 microns at the temperature of 20-400 ℃, the diffusion depth from the metal foil layer to the carrier layer direction is less than or equal to 3 microns, and the carrier layer and the metal foil layer are prevented from mutually diffusing to cause bonding at high temperature by arranging the barrier layer, so that the carrier layer and the metal foil layer are easy to peel.

Description

Preparation method of metal foil with carrier

Technical Field

The invention relates to the technical field of materials, in particular to a preparation method of a metal foil with a carrier.

Background

At present, the substrate is a processing material of a Flexible Printed Circuit board (FPC), which is generally composed of a Flexible insulating base film and a metal foil with a carrier. In the prior art, when a substrate is prepared, a side of a metal foil (including a carrier layer and a metal foil layer) with a carrier, which is provided with the metal foil layer, is generally pressed with a flexible insulating base film to obtain the substrate, and when the substrate is used, the carrier layer needs to be peeled off. However, since the metal foil with a carrier and the flexible insulating base film need to be laminated at a high temperature, the carrier layer and the metal foil layer are easily diffused into each other at a high temperature, and the carrier layer and the metal foil layer are bonded to each other, so that the carrier layer and the metal foil layer are difficult to be peeled.

Disclosure of Invention

An object of an embodiment of the present invention is to provide a method for manufacturing a metal foil with a carrier, which can prevent a carrier layer of the metal foil with the carrier from being bonded to a metal foil layer of the metal foil with the carrier due to interdiffusion at a high temperature, so that the carrier layer and the metal foil layer are easily peeled.

In order to solve the above technical problem, an embodiment of the present invention provides a method for preparing a metal foil with a carrier, including the following steps:

forming a carrier layer;

forming a barrier layer on one side of the carrier layer;

forming a release layer on the barrier layer;

forming a metal foil layer on the release layer;

alternatively, the first and second electrodes may be,

forming a carrier layer;

forming a release layer on one side of the carrier layer;

forming a barrier layer on the peeling layer;

forming a metal foil layer on the barrier layer;

wherein, at the temperature of 20-400 ℃, the diffusion depth of the carrier layer to the metal foil layer is less than or equal to 3 μm, and the diffusion depth of the metal foil layer to the direction of the carrier layer is less than or equal to 3 μm.

Preferably, the diffusion depth of the carrier layer to the metal foil layer is less than or equal to 1 μm, and the diffusion depth of the metal foil layer to the carrier layer direction is less than or equal to 1 μm.

Preferably, the carrier layer, the release layer, the barrier layer, and the metal foil layer are sequentially stacked, and the peel strength between the metal foil layer and the barrier layer is greater than the peel strength between the release layer and the barrier layer.

Preferably, the forming of the barrier layer on one side of the carrier layer is specifically:

forming a metal adhesive layer on one side of the carrier layer;

and forming a high-temperature resistant layer on the metal bonding layer.

Preferably, the step of forming a barrier layer on the release layer is specifically:

forming a high temperature resistant layer on the peeling layer;

and forming a metal bonding layer on the high-temperature resistant layer.

As a preferred scheme, the forming of the carrier layer specifically comprises the following steps:

carrying out first electroplating to generate a first metal layer;

performing second electroplating on the surface of the first metal layer to generate a second metal layer, wherein the first metal layer and the second metal layer form a carrier layer; the plating solution for the second electroplating comprises additives, wherein the additives comprise brightener sodium sulfonate, leveling agent thiourea and wetting agent polyethylene glycol.

Preferably, after the carrier layer is formed, the method further comprises the following steps:

and roughening the carrier layer to obtain the roughened carrier layer.

Preferably, after the carrier layer is roughened to obtain a roughened carrier layer, the method further comprises the following steps:

and forming a first oxidation preventing layer on the roughened carrier layer.

Preferably, the carrier layer is formed and then comprises:

annealing the carrier layer under heat treatment conditions;

wherein the heat treatment conditions are as follows: the heat treatment temperature is 200-300 ℃, and the heating time is 30-300 minutes.

Preferably, the forming of the metal foil layer on the peeling layer is specifically:

sputtering a third metal layer on the peeling layer;

electroplating a fourth metal layer on the sputtered third metal layer, wherein the third metal layer and the fourth metal layer form the metal foil layer; or the like, or, alternatively,

the step of forming the metal foil layer on the barrier layer specifically comprises the following steps:

sputtering a third metal layer on the barrier layer;

and electroplating a fourth metal layer on the sputtered third metal layer, wherein the third metal layer and the fourth metal layer form the metal foil layer.

As a preferred scheme, the electroplating of the fourth metal layer on the sputtered third metal layer specifically includes the following steps:

performing third electroplating to generate a fifth metal layer;

performing fourth electroplating on the surface of the fifth metal layer to generate a sixth metal layer, wherein the fifth metal layer and the sixth metal layer form the fourth metal layer; the plating solution for the fourth electroplating comprises additives, wherein the additives comprise brightener sodium sulfonate, leveling agent thiourea and wetting agent polyethylene glycol.

Preferably, the method for preparing the metal foil with the carrier further comprises the steps of: and roughening the surface of the metal foil layer far away from the carrier layer.

Preferably, after the roughening treatment is performed on the side of the metal foil layer away from the carrier layer, the method further comprises the following steps: and forming a second oxidation prevention layer on one surface of the roughened metal foil layer, which is far away from the carrier layer.

The preparation method of the metal foil with the carrier comprises the steps of firstly forming a carrier layer, then forming a barrier layer on one side of the carrier layer, further forming a peeling layer on the barrier layer, and finally forming a metal foil layer on the peeling layer, so that the metal foil with the carrier is obtained; alternatively, first, a carrier layer is formed; and then, forming a release layer on one side of the carrier layer, forming a barrier layer on the release layer, and finally forming a metal foil layer on the barrier layer to obtain the metal foil with the carrier, wherein the diffusion depth of the carrier layer to the metal foil layer is less than or equal to 3 μm at the temperature of 20-400 ℃, and the diffusion depth of the metal foil layer to the direction of the carrier layer is less than or equal to 3 μm, wherein the carrier layer is easily peeled by arranging the release layer so as to peel the carrier layer, and the carrier layer and the metal foil layer are prevented from being mutually diffused to cause bonding at high temperature by arranging the barrier layer.

Drawings

FIG. 1 is a schematic view of a carrier layer, a barrier layer, a release layer, and a metal foil layer sequentially stacked in one embodiment of a metal foil with a carrier according to the present invention;

FIG. 2 is a schematic structural view of one embodiment of a supported metal foil of the present invention comprising a metal tie layer and a refractory layer, wherein the carrier layer, barrier layer, release layer, and metal foil layer are sequentially stacked;

fig. 3 is a schematic structural view of another embodiment of a metal foil with a carrier according to the present invention, which includes a metal bonding layer and a high temperature resistant layer, and in which a carrier layer, a barrier layer, a release layer, and a metal foil layer are sequentially stacked;

FIG. 4 is a schematic view of a carrier layer, a release layer, a barrier layer, and a metal foil layer sequentially stacked in one embodiment of a supported metal foil according to the present invention;

FIG. 5 is a schematic structural view of one embodiment of a supported metal foil of the present invention comprising a metal tie layer and a refractory layer, wherein the carrier layer, a release layer, a barrier layer, and a metal foil layer are sequentially stacked;

fig. 6 is a schematic structural view of another embodiment of a metal foil with a carrier according to the present invention, which includes a metal tie layer and a refractory layer, and in which a carrier layer, a barrier layer, a release layer, and a metal foil layer are sequentially stacked;

FIG. 7 is a schematic view of a carrier layer, a barrier layer, a release layer, and a metal foil layer sequentially stacked in one embodiment of a supported metal foil provided in accordance with the present invention;

fig. 8 is a schematic view of another embodiment of a carrier layer, a barrier layer, a release layer, and a metal foil layer of the present invention in a stacked arrangement;

FIG. 9 is a schematic view of a carrier layer, a release layer, a barrier layer, and a metal foil layer sequentially stacked in one embodiment of a supported metal foil provided in accordance with the present invention;

fig. 10 is a schematic view of another embodiment of a carrier layer, a release layer, a barrier layer, and a metal foil layer of the present invention in a stacked arrangement;

FIG. 11 is a schematic flow chart diagram illustrating one embodiment of a method for preparing a supported metal foil according to the present invention;

FIG. 12 is a schematic flow chart of another embodiment of a method for producing a supported metal foil according to the present invention;

wherein, 1, a carrier layer; 2. a barrier layer; 21. a high temperature resistant layer; 22. a metal bonding layer; 3. a peeling layer; 4. a metal foil layer.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Referring to fig. 1, a metal foil with a carrier according to a preferred embodiment of the present invention includes a carrier layer 1, a barrier layer 2, a peeling layer 3, and a metal foil layer 4;

the carrier layer 1, the barrier layer 2, the peeling layer 3 and the metal foil layer 4 are sequentially stacked; alternatively, the first and second electrodes may be,

referring to fig. 4, the carrier layer 1, the peeling layer 3, the barrier layer 2, and the metal foil layer 4 are sequentially stacked;

wherein, at the temperature of 20-400 ℃, the diffusion depth from the carrier layer 1 to the metal foil layer 4 is less than or equal to 3 μm, and the diffusion depth from the metal foil layer 4 to the direction of the carrier layer 1 is less than or equal to 3 μm.

In the embodiment of the invention, the carrier layer 1, the barrier layer 2, the peeling layer 3 and the metal foil layer 4 are sequentially stacked; or the carrier layer 1, the peeling layer 3, the barrier layer 2 and the metal foil layer 4 are sequentially stacked; at the temperature of 20-400 ℃, the diffusion depth from the carrier layer 1 to the metal foil layer 4 is less than or equal to 3 μm, and the diffusion depth from the metal foil layer 4 to the direction of the carrier layer 1 is less than or equal to 3 μm, wherein, by arranging the release layer 3 to facilitate the release of the carrier layer 1, the carrier layer 1 and the metal foil layer 4 are prevented from mutual diffusion at high temperature to cause bonding by arranging the barrier layer 2, thereby enabling the carrier layer 1 and the metal foil layer 4 to be easily released.

Preferably, the diffusion depth of the carrier layer 1 to the metal foil layer 4 is less than or equal to 1 μm, and the diffusion depth of the metal foil layer 4 to the carrier layer 1 direction is less than or equal to 1 μm.

As shown in fig. 4 and 10, when the carrier layer 1, the release layer 3, the barrier layer 2, and the metal foil layer 4 are sequentially stacked, the peel strength between the metal foil layer 4 and the barrier layer 2 is preferably greater than the peel strength between the release layer 3 and the barrier layer 2. When the carrier layer 1, the peeling layer 3, the barrier layer 2 and the metal foil layer 4 are sequentially stacked, the peeling strength between the metal foil layer 4 and the barrier layer 2 is greater than the peeling strength between the peeling layer 3 and the barrier layer 2, so that when the metal foil with the carrier is used, peeling occurs between the peeling layer 3 and the barrier layer 2, and the barrier layer 2 remains on the metal foil layer 4, so that the barrier layer 2 can play a role of preventing oxidation on the metal foil layer 4, thereby protecting the metal foil layer 4. Of course, the peel strength between the metal foil layer 4 and the barrier layer 2 may also be less than or equal to the peel strength between the peel layer 3 and the barrier layer 2, so that when peeling off the metal foil with the carrier, the barrier layer 2 can be partially or completely left on the peel layer 3, and is peeled off from the metal foil layer 4 along with the carrier layer 1 and the peel layer 3 at the same time, as shown in fig. 4 and 9, which is not described herein again.

As shown in fig. 1 and 8, when the carrier layer 1, the barrier layer 2, the peeling layer 3, and the metal foil layer 4 are sequentially stacked, the peeling strength between the peeling layer 3 and the metal foil layer 4 is greater than or equal to the peeling strength between the peeling layer 3 and the barrier layer 2. Since the peel strength between the peel layer 3 and the metal foil layer 4 is greater than or equal to the peel strength between the peel layer 3 and the barrier layer 2, the peel layer 3 can be partially or entirely left on the metal foil layer 4 when peeling the metal foil with a carrier, so that the metal foil layer 4 can be prevented from being oxidized, thereby effectively protecting the metal foil layer 4. Of course, the peel strength between the peel layer 3 and the metal foil layer 4 may also be smaller than the peel strength between the peel layer 3 and the barrier layer 2, so that when the metal foil with the carrier is peeled, the peel layer 3 can be partially or completely remained on the barrier layer 2, and the carrier layer 1 and the barrier layer 2 are peeled from the metal foil layer 4 at the same time, as shown in fig. 1 and 7, which is not described herein again.

As shown in fig. 2, fig. 3, fig. 5 and fig. 6, the barrier layer 2 includes a high temperature resistant layer 21, and the high temperature resistant layer 21 is an organic high temperature resistant layer 21; alternatively, the high temperature resistant layer 21 is made of any one or more of tungsten, chromium, zirconium, titanium, nickel, molybdenum, cobalt, and graphite. Preferably, the high temperature resistant layer 21 has a single layer alloy structure, or a multilayer structure composed of a single metal layer, or a multilayer structure composed of an alloy layer and a single metal layer. Specifically, the single-layer alloy structure is a single-layer structure made of an alloy material, for example, a single-layer structure made of a tungsten-chromium alloy; the multilayer structure of the single metal layer is a multilayer structure of a plurality of single-layer structures each made of one metal, for example, a multilayer structure of a tungsten metal layer and a chromium metal layer; the multilayer structure composed of the alloy layer and the single metal layer is a multilayer structure composed of a plurality of single-layer structures each composed of one metal or alloy material, such as a multilayer structure composed of a zirconium metal layer and a tungsten-chromium alloy layer.

As shown in fig. 2 and 3, when the carrier layer 1, the barrier layer 2, the release layer 3, and the metal foil layer 4 are sequentially stacked, in order to prevent delamination between the barrier layer 2 and the carrier layer 1, the barrier layer 2 in this embodiment further includes a metal adhesive layer 22, and the metal adhesive layer 22 is disposed between the carrier layer 1 and the high temperature resistant layer 21. For example, the barrier layer 2 includes a metal a that can be bonded to the carrier layer 1 and/or a metal B that is bonded to the high temperature resistant layer 21, thereby preventing peeling between the carrier layer 1 and the barrier layer 2. For example, metal a is copper or zinc; and metal B is nickel, iron or manganese. It is to be understood that the metallic bond layer 22 is made of any one or more of copper, zinc, nickel, iron, and manganese; alternatively, the metallic bond layer 22 is made of one of copper or zinc and one of nickel, iron, and manganese. The structure of the metal bonding layer 22 may include, but is not limited to, the following: (1) the metal bonding layer 22 is a single metal layer composed of metal a, wherein the metal a is copper or zinc; (2) the metal bonding layer 22 is a single metal layer composed of metal B, wherein the metal B is nickel, iron or manganese; (3) the metal bonding layer 22 is composed of a metal A and a metal BA single-layer alloy structure such as a single-layer alloy structure made of a copper-nickel alloy; (4) the metal bonding layer 22 includes a multilayer structure composed of an alloy layer and a single metal layer; wherein the alloy layer of the metal bonding layer 22 is made of metal a and metal B, and the single metal layer of the metal bonding layer 22 is made of metal a or metal B; for example, an alloy layer made of a copper-nickel alloy and a single metal layer made of manganese; (5) the metal adhesive layer 22 has a multilayer structure composed of a single-layer structure of metal a and a single-layer structure of metal B, for example, a multilayer structure composed of a copper metal layer and a nickel metal layer. When the metal adhesive layer 22 is a multi-layered structure composed of a single-layered structure of metal a and a single-layered structure of metal B, the single-layered structure of metal a is disposed between the carrier layer 1 and the single-layered structure of metal B, and since the adhesive force between metal a and the carrier layer 1 is stronger and the adhesive force between metal B and the high temperature-resistant layer 21 is stronger, the barrier layer 2 is not easily separated from the carrier layer 1 by disposing the single-layered structure of metal a between the carrier layer 1 and the single-layered structure of metal B. By providing the metal adhesive layer 22, the barrier layer 2 can be firmly connected with the carrier layer 1, thereby preventing the peeling between the barrier layer 2 and the carrier layer 1. Furthermore, the thickness of the barrier layer 2 is greater than or equal to

Preferably, the thickness of the barrier layer 2 is preferably such that

In the present embodiment, the thickness of the metal foil layer 4 is less than or equal to 9 μm. In order to meet the requirement of circuit board fine circuit production, the thickness of the metal foil layer 4 may be preferably 6 μm, 5 μm, 4 μm or 2 μm, so as to obtain an extremely thin metal foil layer 4 which is advantageous for forming a fine circuit board. In addition, in order to peel off from the carrier layer 1 to obtain the complete ultrathin metal foil layer 4 with few pinholes (especially, a metal foil layer with a thickness of 2 μm, 4 μm, etc.), in the present embodiment, the metal adhesive layer 22 is provided, so that the metal adhesive layer 22 not only enables the barrier layer 2 and the carrier layer 1 to have a strong peel strength, but also effectively ensures that the carrier layer 1 can be stably peeled off from the metal foil layer 4 to obtain the complete ultrathin metal foil layer 4, and the surface of the carrier layer 1 is processed by the metal adhesive layer 22, so that the whole surface of the carrier layer 1 is more uniform and compact, thereby being beneficial to peeling off from the carrier layer 1 to obtain the ultrathin metal foil layer 4 with few pinholes, and further being beneficial to the manufacture of subsequent circuits. In addition, the metal foil layer 4 is a copper foil or an aluminum foil; the carrier layer 1 can be carrier copper, carrier aluminum, or organic film, etc., and a certain thickness is needed because the carrier layer 1 mainly plays a role of carrying, and when the carrier layer 1 is carrier copper or carrier aluminum, the thickness of the carrier layer 1 is preferably 9-50 μm; when the support layer 1 is an organic thin film, the thickness of the support layer 1 is preferably 20 to 100 μm.

With reference to fig. 5 and 6, similarly, when the carrier layer 1, the peeling layer 3, the barrier layer 2 and the metal foil layer 4 are sequentially stacked, in order to prevent the metal foil layer 4 from being oxidized when the metal foil with the carrier is peeled off, the barrier layer 2 can be left on the metal foil layer 4, and the barrier layer 2 may further include a metal adhesive layer 22, where the metal adhesive layer 22 is disposed between the high temperature resistant layer 21 and the metal foil layer 4. For example, the barrier layer 2 includes a metal a that may be bonded to the metal foil layer 4 and/or a metal B that may be bonded to the high temperature resistant layer 21, thereby preventing peeling between the metal foil layer 4 and the barrier layer 2. For example, metal a is copper or zinc; and metal B is nickel, iron or manganese. It is to be understood that the metallic bond layer 22 is made of any one or more of copper, zinc, nickel, iron, and manganese; alternatively, the metallic bond layer 22 is made of one of copper or zinc and one of nickel, iron, and manganese. The structure of the metal bonding layer 22 may include, but is not limited to, the following: (1) the metal bonding layer 22 is a single metal layer composed of metal a, wherein the metal a is copper or zinc; (2) the metal bonding layer 22 is a single metal layer composed of metal B, wherein the metal B is nickel, iron or manganese; (3) the metalThe bonding layer 22 is a single-layer alloy structure composed of a metal a and a metal B, for example, a single-layer alloy structure made of a copper-nickel alloy; (4) the metal bonding layer 22 includes a multilayer structure composed of an alloy layer and a single metal layer; wherein the alloy layer of the metal bonding layer 22 is made of metal a and metal B, and the single metal layer of the metal bonding layer 22 is made of metal a or metal B; for example, an alloy layer made of a copper-nickel alloy and a single metal layer made of manganese; (5) the metal adhesive layer 22 has a multilayer structure composed of a single-layer structure of metal a and a single-layer structure of metal B, for example, a multilayer structure composed of a copper metal layer and a nickel metal layer. When the metal adhesive layer 22 is a multi-layered structure composed of a single-layered structure of metal a and a single-layered structure of metal B, the single-layered structure of metal a is disposed between the metal foil layer 4 and the single-layered structure of metal B, and since the adhesive force between metal a and the metal foil layer 4 is stronger and the adhesive force between metal B and the high temperature-resistant layer 21 is stronger, the barrier layer 2 is not easily separated from the metal foil layer 4 by disposing the single-layered structure of metal a between the metal foil layer 4 and the single-layered structure of metal B. By arranging the metal bonding layer 22, the barrier layer 2 can be firmly connected with the metal foil layer 4, so that the barrier layer 2 and the carrier layer 1 are prevented from being peeled off, and when the metal foil with the carrier is peeled off, the barrier layer 2 can be left on the metal foil layer 4, so that the metal foil layer 4 is prevented from being oxidized, and the metal foil layer 4 is protected. Furthermore, the thickness of the barrier layer 2 is greater than or equal to

Preferably, the thickness of the barrier layer 2 is preferably such that

In the present embodiment, the peeling layer 3 is made of any one or more materials of nickel, silicon, molybdenum, graphite, titanium, and niobium; alternatively, the peeling layer 3 is made of an organic polymer material. Wherein the thickness of the peeling layer 3 is preferably

Since it is difficult to form a uniform metal foil layer 4 when the peeling layer 3 is too thick, a large number of pinholes are easily generated in the metal foil layer 4 (when pinholes are formed in the metal foil layer 4, a disconnection phenomenon is easily generated after it is etched into a wiring); when the peeling layer 3 is too thin, it is liable to cause difficulty in peeling from the metal foil layer 4; therefore, the thickness of the peeling layer 3 is preferably set to be thick

Thereby ensuring that a uniform metal foil layer 4 can be formed, avoiding the generation of a large number of pinholes in the metal foil layer 4, while allowing easy peeling between the peeling layer 3 and the metal foil layer 4.

In the embodiment of the present invention, the roughness Rz of the side of the carrier layer 1 near the metal foil layer 4 is less than or equal to 5 μm; and/or the roughness Rz of the side of the metal foil layer 4 facing away from the carrier layer 1 is less than or equal to 3.0 μm. When the metal foil layer 4 is a copper foil, the larger the roughness of the copper foil is, the larger the adhesion force between the copper foil and other materials is, but when the roughness of the copper foil is too large, the copper foil cannot be applied to a circuit board for high-frequency signal transmission, so that the roughness Rz of a general copper foil is 0.5 to 3.0 μm; when the copper foil is applied at high frequency, the roughness of the copper foil is set to be less than 0.5 μm, so that the copper foil can be applied to a circuit board for high frequency signal transmission on the premise of ensuring the adhesive force between the copper foil and other materials.

In the embodiment of the present invention, it should be noted that the roughness Rz represents the maximum height of the profile: the distance between the peak and valley lines of the profile. The sampling length is a length of a reference line specified by evaluating the surface roughness, the sampling length is selected according to the forming condition and the texture characteristics of the actual surface of the part, and the sampling length is measured according to the total trend of the actual surface profile.

In the embodiment of the present invention, in order to prevent the carrier layer 1 from being oxidized, a first oxidation preventing layer is disposed on a side of the carrier layer 1 close to the barrier layer 2 in the embodiment; the carrier layer 1 is protected by providing a first oxidation preventing layer on the side of the carrier layer 1 adjacent to the barrier layer 2 to prevent oxidation of the carrier layer 1. In order to prevent the metal foil layer 4 from being oxidized, a second oxidation preventing layer is arranged on one side, away from the barrier layer 2, of the metal foil layer 4, and the second oxidation preventing layer is arranged on one side, away from the barrier layer 2, of the metal foil layer 4, so that the metal foil layer 4 is prevented from being oxidized, and the metal foil layer 4 is protected.

In order to solve the same technical problem, as shown in fig. 11 and 12, an embodiment of the present invention further provides a method for manufacturing a metal foil with a carrier, including the steps of:

s11, forming a carrier layer 1;

s12, forming a barrier layer 2 on one side of the carrier layer 1;

s13, forming a release layer 3 on the barrier layer 2;

s14, forming a metal foil layer 4 on the peeling layer 3;

alternatively, the first and second electrodes may be,

s21, forming a carrier layer 1;

s22, forming a peeling layer 3 on one side of the carrier layer 1;

s23, forming a barrier layer 2 on the peeling layer 3;

s24, forming a metal foil layer 4 on the barrier layer 2;

In the embodiment of the present invention, the forming of the barrier layer 2 on one side of the carrier layer 1 is specifically:

s131, forming a metal adhesive layer 22 on one side of the carrier layer 1;

and S132, forming a high temperature resistant layer 21 on the metal bonding layer 22.

In the embodiment of the present invention, the forming of the barrier layer 2 on the peeling layer 3 is specifically:

s231, forming a high temperature resistant layer 21 on the peeling layer 3;

and S232, forming a metal bonding layer 22 on the high-temperature resistant layer 21.

In the embodiment of the present invention, the metal adhesion layer 22 and the high temperature resistant layer 21 may be formed by sputtering, wherein the current of the sputtering method is preferably 6-12A, and the voltage is preferably 300-500V. The metallic bond layer 22 may be made of any one or more of copper, zinc, nickel, iron, and manganese; alternatively, the metallic bond layer 22 is made of one of copper or zinc and one of nickel, iron, and manganese. The high temperature resistant layer 21 may be an organic high temperature resistant layer 21; or, the high temperature resistant layer 21 may be made of any one or more of tungsten, chromium, zirconium, titanium, nickel, molybdenum, cobalt, and graphite, and the high temperature resistant layer 21 may be a single-layer alloy structure or a multi-layer structure consisting of a single metal layer or a multi-layer structure consisting of an alloy layer and a single metal layer.

In an embodiment of the present invention, the forming the carrier layer 1 specifically includes the following steps:

s111, carrying out first electroplating to generate a first metal layer;

s112, performing second electroplating on the surface of the first metal layer to generate a second metal layer, wherein the first metal layer and the second metal layer form a carrier layer;

in the embodiment of the present invention, after the forming of the carrier layer 1, the following steps are further included:

s113, roughening the carrier layer 1 to obtain a roughened carrier layer 1;

s114, forming a first anti-oxidation layer on the roughened carrier layer 1;

the carrier layer 1 may be carrier copper or carrier aluminum, when the carrier layer 1 is carrier copper, the first metal layer and the second metal layer are both copper metal layers, and when the carrier layer 1 is carrier aluminum, the first metal layer and the second metal layer are both aluminum metal layers. The plating solution for the first electroplating may include a copper sulfate solution, wherein the copper content of the plating solution for the first electroplating is: 15-25g/L, and the PH value is 6-9; the plating solution for the second plating may include a copper sulfate solution, wherein the plating solution for the second plating has a copper content of 70 to 80g/L and an acid content of 90 to 100g/L, and further includes additives including brightener sodium sulfonate, leveling agent thiourea, and wetting agent polyethylene glycol, the mass fraction of the brightener sodium sulfonate is preferably 0.1 to 2g/L, the mass fraction of the leveling agent thiourea is preferably 0.01 to 1g/L, and the mass fraction of the wetting agent polyethylene glycol is preferably 0.1 to 5 g/L. The carrier layer 1 is roughened by means of acid electroplating, wherein the plating solution for acid copper plating can comprise a copper sulfate solution, wherein the copper content of the plating solution for acid copper plating is 10-15g/L, the acid content is 90-100g/L, and the molybdenum content is 600-800 PPM. Wherein, the first oxidation prevention layer can be formed in a zinc-nickel alloy plating mode; after the first oxidation preventing layer is formed on the roughened carrier layer 1, the first oxidation preventing layer may be plasma cleaned (plasma), wherein the voltage for plasma cleaning is preferably 1500-.

In the embodiment of the present invention, in order to further prevent the adhesion between the carrier layer 1 and the metal foil layer 4, the carrier layer 1 is formed by:

s115, annealing the carrier layer 1 under the heat treatment condition; wherein the heat treatment conditions are as follows: the heat treatment temperature is 200-300 ℃, and the heating time is 30-300 minutes. Preferably, the heating time is 1 hour. The carrier layer 1 is annealed under heat treatment conditions to suppress crystal growth of the carrier layer 1 in the heating process, thereby delaying diffusion of the carrier layer 1 in the heating process and further preventing adhesion between the carrier layer 1 and the metal foil layer 4.

In the present embodiment, the peeling layer 3 may be made of any one or more materials of nickel, silicon, molybdenum, graphite, titanium, and niobium. In addition, the peeling layer 3 is formed on the barrier layer 2 or the peeling layer 3 is formed on one side of the carrier layer 1, specifically, a sputtering method may be adopted, wherein the sputtering conditions for forming the peeling layer 3 by the sputtering method may include: the current is preferably 6-12A, and the voltage is preferably 300-500V.

Because adopt the electroplating mode to lead to easily the barrier layer 2 with the roughness of peel ply 3 receives the influence of electric current when electroplating, thereby makes the formation the barrier layer 2 with the surface roughness of peel ply 3 is very inhomogeneous, thereby leads to follow-up formation the surface roughness of metal foil layer 4 is also inhomogeneous, is unfavorable for forming good peeling stability and pinhole quantity then, also does not benefit to the preparation of follow-up circuit simultaneously. Based on this, in the embodiment of the present invention, the metal adhesion layer 22, the high temperature resistant layer 21 and the peeling layer 3 are preferably sputtered, the current of the sputtering method is preferably 6-12A, and the voltage is preferably 300-500V. The metal bonding layer 22 and the high temperature resistant layer 21 formed by sputtering constitute the barrier layer 2 to ensure that a uniform and dense barrier layer 2 is obtained, and the uniform and dense peeling layer 3 is formed by sputtering, thereby contributing to improvement of peeling stability of the metal foil with a carrier and being capable of effectively reducing the number of pinholes; in addition, the metal foil layer 4 is preferably formed by electroplating, and before the metal foil layer 4 is formed, the uniform and dense barrier layer 2 and the peeling layer 3 are formed by sputtering, so that the metal foil layer 4 is uniformly electroplated, the surface roughness of the formed metal foil layer 4 is uniform, the subsequent circuit is further facilitated to be manufactured, and the thinner metal foil layer 4 is facilitated to be manufactured.

In the embodiment of the present invention, the forming of the metal foil layer 4 on the peeling layer 3 is specifically:

s141, sputtering a third metal layer on the peeling layer 3;

s142, electroplating a fourth metal layer on the sputtered third metal layer, wherein the third metal layer and the fourth metal layer form the metal foil layer; or the like, or, alternatively,

the forming of the metal foil layer 4 on the barrier layer 2 is specifically as follows:

s241, sputtering a third metal layer on the barrier layer 2;

and S242, electroplating a fourth metal layer on the sputtered third metal layer, wherein the third metal layer and the fourth metal layer form the metal foil layer.

The metal foil layer 4 can be a copper foil or an aluminum foil, and when the metal foil layer 4 is a copper foil, the third metal layer and the fourth metal layer are both copper metal layers; when the metal foil layer 4 is an aluminum foil, the third metal layer and the fourth metal layer are both aluminum metal layers. Because the peel ply 3 has the stripping nature, if adopt the electroplating mode alone, it is inhomogeneous easily to lead to the metal level of electroplating, in order to obtain the even metal foil layer 4 in surface, this embodiment is at first through sputtering the third metal level, electroplates the fourth metal level again to avoid metal foil layer 4 to produce the pinhole, and then obtain the even metal foil layer 4 in surface. Wherein the sputtering conditions for sputtering the third metal layer on the peeling layer 3 or sputtering the third metal layer on the barrier layer 2 are as follows: the current is preferably 6-12A, the voltage is preferably 300-500V, the vacuum degree is preferably 0.1-0.5Pa, the sputtering speed is preferably 4-10m/min, and the winding and unwinding tension is preferably 60-150N.

In the embodiment of the present invention, the electroplating of the fourth metal layer on the sputtered third metal layer specifically includes the following steps:

s31, performing third electroplating to generate fifth metal;

s32, performing fourth electroplating on the surface of the fifth metal layer to generate a sixth metal layer, wherein the fifth metal layer and the sixth metal layer form the fourth metal layer;

wherein the plating solution for the third electroplating may include a copper sulfate solution, wherein the copper content of the plating solution for the third electroplating is: 15-25g/L, and the PH value is 6-9; the plating solution for the fourth electroplating may include a copper sulfate solution, wherein the copper content of the plating solution for the fourth electroplating is 70 to 80g/L, the acid content is 90 to 100g/L, the plating solution for the fourth electroplating includes additives including brightener sodium sulfonate, leveler thiourea, and wetting agent polyethylene glycol, the mass fraction of the brightener sodium sulfonate is preferably 0.1 to 2g/L, the mass fraction of the leveler thiourea is preferably 0.01 to 1g/L, and the mass fraction of the wetting agent polyethylene glycol is preferably 0.1 to 5 g/L. The metal foil layer 4 can be a copper foil or an aluminum foil, and when the metal foil layer 4 is a copper foil, the fifth metal layer and the sixth metal layer are both copper metal layers; when the metal foil layer 4 is an aluminum foil, the fifth metal layer and the sixth metal layer are both aluminum metal layers. In the embodiment of the present invention, in order to avoid the warpage of the metal foil with carrier, in the embodiment, the plating solutions (including the plating solution for the first electroplating, the plating solution for the second electroplating, the plating solution for the third electroplating, and the plating solution for the fourth electroplating) for preparing the carrier layer 1 and the metal foil layer 4 are set to be the same, so that the stress action and the tensile action of the carrier layer 1 and the metal foil layer 4 are the same, the bending degrees of the carrier layer 1 and the metal foil layer 4 are the same, and the warpage of the metal foil with carrier is avoided.

In an embodiment of the present invention, the method for preparing the metal foil with carrier further includes the steps of:

and S41, roughening the side of the metal foil layer 4 away from the carrier layer 1.

And S42, forming a second oxidation prevention layer on one surface of the roughened metal foil layer 4, which is far away from the carrier layer 1.

Wherein, the surface of the metal foil layer 4 far away from the carrier layer 1 is roughened by an acid electroplating mode, wherein the copper content of the acid copper plating solution is 10-15g/L, the acid content is 90-100g/L, and the molybdenum content is 600-800 PPM; wherein, the second oxidation prevention layer can be formed in a zinc-nickel alloy plating mode; after the second oxidation preventing layer is formed, plasma cleaning (plasma) may be performed on the second oxidation preventing layer, wherein the voltage during plasma cleaning is preferably 1500-.

The following examples are provided to illustrate the preparation of the metal foil with carrier, in particular as follows:

example 1

S51, forming a carrier layer 1; specifically, first electroplating is carried out to generate a first metal layer; then, carrying out second electroplating on the surface of the first metal layer to generate a second metal layer, wherein the first metal layer and the second metal layer form a carrier layer; next, the carrier layer 1 is roughened, and a first oxidation preventing layer is formed on the roughened carrier layer 1. Annealing the carrier layer 1 under heat treatment conditions; wherein the heat treatment conditions are as follows: the heat treatment temperature was 250 ℃ and the heating time was 1 hour. Wherein, the carrier layer 1 is carrier copper, the plating solution for the first electroplating comprises copper sulfate solution, and the copper content of the plating solution for the first electroplating is as follows: 20g/L and the PH value is 7; the plating solution for the second electroplating can comprise a copper sulfate solution, wherein the copper content of the plating solution for the second electroplating is 75g/L, the acid content is 95g/L, the plating solution for the second electroplating further comprises additives, the additives comprise brightener sodium sulfonate, leveling agent thiourea and wetting agent polyethylene glycol, the mass fraction of the brightener sodium sulfonate is 0.8g/L, the mass fraction of the leveling agent thiourea is 0.5g/L, and the mass fraction of the wetting agent polyethylene glycol is 3 g/L. In addition, the carrier layer 1 is roughened by means of acid plating, wherein the plating solution for acid copper plating comprises a copper sulfate solution, wherein the copper content of the plating solution for acid copper plating is 13g/L, the acid content is 95g/L, and the molybdenum content is 700 PPM. Wherein, the first oxidation prevention layer is formed in a zinc-nickel alloy plating mode.

S52, forming a barrier layer 2 on one side of the carrier layer 1 by sputtering; specifically, a metal adhesive layer 22 is first formed on one side of the carrier layer 1 by sputtering, and a high temperature resistant layer 21 is formed on the metal adhesive layer 22 by sputtering. The metal bonding layer 22 is a structure formed by a copper metal layer and a nickel metal layer, the copper metal layer is connected with the carrier layer 1, and the nickel metal layer is connected with the high temperature resistant layer 21; the high temperature resistant layer 21 is a single-layer alloy structure made of tungsten-titanium alloy;

s53, forming a peeling layer 3 on the barrier layer 2 by sputtering; wherein the stripping layer 3 is a graphite layer;

s54, forming a metal foil layer 4 on the peeling layer 3; specifically, first, a third metal layer is sputtered on the peeling layer 3, and then a fourth metal layer is electroplated on the sputtered third metal layer, the third metal layer and the fourth metal layer constituting the metal foil layer. The metal foil layer 4 is a copper foil, the third metal layer and the fourth metal layer are both copper metal layers, and the sputtering conditions for sputtering the third metal layer on the peeling layer 3 are as follows: the current is preferably 9A, the voltage is preferably 400V, the vacuum degree is preferably 0.3Pa, the sputtering speed is preferably 7m/min, and the winding and unwinding tension is preferably 100N; in this embodiment, the plating solutions (including the plating solution for the first plating, the plating solution for the second plating, the plating solution for the third plating, and the plating solution for the fourth plating) for preparing the support layer 1 and the metal foil layer 4 are set to be the same.

S55, roughening the surface of the metal foil layer 4 away from the carrier layer 1, and forming a second anti-oxidation layer on the roughened surface of the metal foil layer 4 away from the carrier layer 1 by adopting an acid electroplating mode; wherein the copper content for the acidic copper plating solution is 13g/L, the acid content is 95g/L, and the molybdenum content is 600-800 PPM; in addition, the second oxidation preventing layer is formed in the form of a zinc-nickel alloy plating.

Example 2

This embodiment is different from embodiment 1 in that the high temperature resistant layer 21 has a single layer alloy structure made of a tungsten-nickel alloy. Other processes and steps of this embodiment are the same as those of embodiment 1, and will not be further described herein.

Example 3

This embodiment is different from embodiment 1 in that the high temperature resistant layer 21 has a single layer alloy structure made of a tungsten-molybdenum alloy. Other processes and steps of this embodiment are the same as those of embodiment 1, and will not be further described herein.

Example 4

This embodiment is different from embodiment 1 in that the high temperature resistant layer 21 has a single layer alloy structure made of a chromium-nickel alloy. Other processes and steps of this embodiment are the same as those of embodiment 1, and will not be further described herein.

Example 5

This embodiment is different from embodiment 1 in that the high temperature resistant layer 21 has a single layer alloy structure made of a zirconium-titanium alloy. Other processes and steps of this embodiment are the same as those of embodiment 1, and will not be further described herein.

Example 6

This embodiment is different from embodiment 1 in that the high temperature resistant layer 21 has a single layer alloy structure made of a titanium-nickel alloy. Other processes and steps of this embodiment are the same as those of embodiment 1, and will not be further described herein.

Example 7

This embodiment is different from embodiment 1 in that the high temperature resistant layer 21 has a single layer alloy structure made of a titanium-molybdenum alloy. Other processes and steps of this embodiment are the same as those of embodiment 1, and will not be further described herein.

Example 8

This embodiment is different from embodiment 1 in that the high temperature resistant layer 21 has a single layer alloy structure made of a titanium-cobalt alloy. Other processes and steps of this embodiment are the same as those of embodiment 1, and will not be further described herein.

Example 9

This embodiment is different from embodiment 1 in that the high temperature resistant layer 21 has a single layer alloy structure made of a nickel-molybdenum alloy. Other processes and steps of this embodiment are the same as those of embodiment 1, and will not be further described herein.

Example 10

This embodiment is different from embodiment 1 in that the high temperature resistant layer 21 has a single layer alloy structure made of a molybdenum-cobalt alloy. Other processes and steps of this embodiment are the same as those of embodiment 1, and will not be further described herein.

Example 11

The present embodiment is different from embodiment 1 in that the high temperature resistant layer 21 has a structure made of a tungsten metal layer and a graphite layer, the tungsten metal layer is connected to the metal bonding layer 22, and the graphite layer is connected to the peeling layer 3. Other processes and steps of this embodiment are the same as those of embodiment 1, and will not be further described herein.

Example 12

The present embodiment is different from embodiment 1 in that the high temperature resistant layer 21 has a structure made of a chromium metal layer and a graphite layer, the chromium metal layer is connected to the metal bonding layer 22, and the graphite layer is connected to the peeling layer 3. Other processes and steps of this embodiment are the same as those of embodiment 1, and will not be further described herein.

Example 13

The present embodiment is different from embodiment 1 in that the high temperature resistant layer 21 has a structure made of a nickel metal layer and a graphite layer, the nickel metal layer is connected to the metal bonding layer 22, and the graphite layer is connected to the peeling layer 3. Other processes and steps of this embodiment are the same as those of embodiment 1, and will not be further described herein.

Example 14

This embodiment is different from embodiment 1 in that the high temperature resistant layer 21 is a structure made of a tungsten-nickel alloy and a chromium metal layer, the tungsten-nickel alloy is connected to the metal bonding layer 22, and the chromium metal layer is connected to the peeling layer 3. Other processes and steps of this embodiment are the same as those of embodiment 1, and will not be further described herein.

Example 15

This embodiment is different from embodiment 1 in that the high temperature resistant layer 21 is a structure made of a nickel-molybdenum alloy and a chromium metal layer, the nickel-molybdenum alloy is connected to the metal bonding layer 22, and the chromium metal layer is connected to the peeling layer 3. Other processes and steps of this embodiment are the same as those of embodiment 1, and will not be further described herein.

Example 16

This embodiment is different from embodiment 1 in that the high temperature resistant layer 21 is a structure made of a molybdenum-cobalt alloy and a chromium metal layer, the molybdenum-cobalt alloy is connected to the metal bonding layer 22, and the chromium metal layer is connected to the peeling layer 3. Other processes and steps of this embodiment are the same as those of embodiment 1, and will not be further described herein.

Example 17

This embodiment is different from embodiment 1 in that the high temperature resistant layer 21 is a structure made of a titanium-nickel alloy and a chromium metal layer, the titanium-nickel alloy is connected to the metal bonding layer 22, and the chromium metal layer is connected to the peeling layer 3. Other processes and steps of this embodiment are the same as those of embodiment 1, and will not be further described herein.

Comparative example 1

This embodiment differs from embodiment 1 in that the barrier layer 2 is not produced after the carrier layer 1 is formed, but a release layer 3 is formed directly on the carrier layer 1. Other processes and steps of this embodiment are the same as those of embodiment 1, and will not be further described herein.

Comparative example 2

This embodiment is different from embodiment 1 in that the release layer 3 is formed directly on the metal adhesive layer 22 without forming the high temperature resistant layer 21 after forming the metal adhesive layer 22. Other processes and steps of this embodiment are the same as those of embodiment 1, and will not be further described herein.

Comparative example 3

This embodiment is different from embodiment 1 in that the metal adhesive layer 22 is not formed after the carrier layer 1 is formed, but the high temperature resistant layer 21 is directly formed on the carrier layer 1. Other processes and steps of this embodiment are the same as those of embodiment 1, and will not be further described herein.

Table 1 shows the diffusion depth from the carrier layer 1 to the metal foil layer 4 and the diffusion depth from the metal foil layer 4 to the carrier layer 1, which are measured as a result of a plurality of tests performed on the carrier-attached metal foils prepared in examples 1 to 17 under the normal temperature condition (for example, 16 to 27 ℃, 25 ℃), or a plurality of tests performed under the normal temperature condition after being laminated with the flexible insulating base film at different temperatures (200 ℃ and 340 ℃), respectively.

TABLE 1

Since the carrier layer 1 and the metal foil layer 4 can diffuse into each other to a certain extent under high temperature conditions, and thus the carrier layer 1 and the metal foil layer 4 are bonded to each other to a certain extent, as can be seen from table 1, the diffusion depth of the carrier layer 1 to the metal foil layer 4 and the diffusion depth of the metal foil layer 4 to the carrier layer 1 increase with increasing temperature. In the metal foil with carrier prepared in examples 1 to 17, the diffusion depth from the carrier layer 1 to the metal foil layer 4 and the diffusion depth from the metal foil layer 4 to the carrier layer 1 were less than 3 μm under normal temperature or high temperature conditions, and therefore, when the metal foil with carrier was used, the carrier layer 1 and the metal foil layer 4 were prevented from being diffused into each other at high temperature to cause adhesion, so that the carrier layer 1 and the metal foil layer 4 were easily peeled. The interdiffusion of the carrier-equipped metal foils prepared in comparative examples 1 and 2 occurs more seriously under high temperature conditions, and thus the carrier layer 1 is bonded to the metal foil layer 4 to a greater extent, thereby causing inconvenience in simultaneously peeling the carrier layer 1, the barrier layer 2 and the peeling layer 3 from the metal foil layer 4 when the carrier-equipped metal foils are used; further, since the carrier-attached metal foil prepared in comparative example 3 is provided with the high temperature resistant layer 21, the diffusion depth of the carrier layer 1 to the metal foil layer 4 and the diffusion depth of the metal foil layer 4 to the carrier layer 1 direction are both less than 3 μm under high temperature conditions, but since the carrier-attached metal foil prepared in comparative example 3 is not provided with the metal adhesive layer 22, the diffusion thereof is more severe than that of the carrier-attached metal foils prepared in examples 1 to 17.

To sum up, the metal foil with the carrier and the preparation method thereof provided by the embodiment of the invention are characterized in that the metal foil with the carrier is sequentially stacked by the carrier layer 1, the barrier layer 2, the peeling layer 3 and the metal foil layer 4; or the carrier layer 1, the peeling layer 3, the barrier layer 2 and the metal foil layer 4 are sequentially stacked; at the temperature of 20-400 ℃, the diffusion depth from the carrier layer 1 to the metal foil layer 4 is less than or equal to 3 μm, and the diffusion depth from the metal foil layer 4 to the direction of the carrier layer 1 is less than or equal to 3 μm, wherein, by arranging the release layer 3 to facilitate the release of the carrier layer 1, the carrier layer 1 and the metal foil layer 4 are prevented from mutual diffusion at high temperature to cause bonding by arranging the barrier layer 2, thereby enabling the carrier layer 1 and the metal foil layer 4 to be easily released.

The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and substitutions can be made without departing from the technical principle of the present invention, and these modifications and substitutions should also be regarded as the protection scope of the present invention.

Claims

1. A preparation method of a metal foil with a carrier is characterized by comprising the following steps:

forming a carrier layer;

forming a barrier layer on one side of the carrier layer;

forming a release layer on the barrier layer;

forming a metal foil layer on the release layer;

alternatively, the first and second electrodes may be,

forming a carrier layer;

forming a release layer on one side of the carrier layer;

forming a barrier layer on the peeling layer;

forming a metal foil layer on the barrier layer;

2. The method for producing a metal foil with a carrier according to claim 1, wherein a diffusion depth of the carrier layer to the metal foil layer is 1 μm or less, and a diffusion depth of the metal foil layer to the carrier layer direction is 1 μm or less.

3. The method of manufacturing a carrier-equipped metal foil according to claim 1, wherein the carrier layer, the peeling layer, the barrier layer, and the metal foil layer are sequentially stacked, and a peel strength between the metal foil layer and the barrier layer is larger than a peel strength between the peeling layer and the barrier layer.

4. The method for producing a metal foil with a carrier according to claim 1, wherein the step of forming a barrier layer on one side of the carrier layer is specifically:

forming a metal adhesive layer on one side of the carrier layer;

and forming a high-temperature resistant layer on the metal bonding layer.

5. The method for producing a metal foil with a carrier according to claim 1, wherein the step of forming a barrier layer on the release layer is specifically:

forming a high temperature resistant layer on the peeling layer;

and forming a metal bonding layer on the high-temperature resistant layer.

6. The method for producing a supported metal foil according to claim 1, wherein the forming of the support layer specifically includes the steps of:

carrying out first electroplating to generate a first metal layer;

7. The method for producing a supported metal foil according to claim 1, further comprising, after said forming the support layer, the steps of:

and roughening the carrier layer to obtain the roughened carrier layer.

8. The method of claim 7, further comprising the step of, after roughening the carrier layer to obtain a roughened carrier layer:

and forming a first oxidation preventing layer on the roughened carrier layer.

9. The method of manufacturing a supported metal foil according to claim 1, further comprising, after forming the support layer:

annealing the carrier layer under heat treatment conditions;

10. The method for producing a metal foil with a carrier according to any one of claims 1 to 9, wherein the forming of the metal foil layer on the release layer is specifically:

sputtering a third metal layer on the peeling layer;

sputtering a third metal layer on the barrier layer;

11. The method for preparing a metal foil with a carrier according to claim 10, wherein the step of electroplating a fourth metal layer on the sputtered third metal layer comprises the following steps:

performing third electroplating to generate a fifth metal layer;

12. The method for producing a supported metal foil as claimed in any one of claims 1 to 9, further comprising the steps of: and roughening the surface of the metal foil layer far away from the carrier layer.

13. The method for producing a metal foil with a carrier according to claim 12, further comprising, after the roughening treatment of the surface of the metal foil layer away from the carrier layer: and forming a second oxidation prevention layer on one surface of the roughened metal foil layer, which is far away from the carrier layer.