CN111276471A - Backlight module, manufacturing method thereof and display device - Google Patents
Backlight module, manufacturing method thereof and display device Download PDFInfo
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- CN111276471A CN111276471A CN202010122720.0A CN202010122720A CN111276471A CN 111276471 A CN111276471 A CN 111276471A CN 202010122720 A CN202010122720 A CN 202010122720A CN 111276471 A CN111276471 A CN 111276471A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- 229910000679 solder Inorganic materials 0.000 claims abstract description 245
- 239000000758 substrate Substances 0.000 claims abstract description 194
- 238000005476 soldering Methods 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims description 58
- 229920002120 photoresistant polymer Polymers 0.000 claims description 22
- 229910000831 Steel Inorganic materials 0.000 claims description 16
- 239000010959 steel Substances 0.000 claims description 16
- 238000009736 wetting Methods 0.000 claims description 14
- 230000000903 blocking effect Effects 0.000 claims description 12
- 238000009713 electroplating Methods 0.000 claims description 11
- 238000003466 welding Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 3
- 230000004907 flux Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 6
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- 239000002904 solvent Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 2
- 229910007637 SnAg Inorganic materials 0.000 description 2
- -1 SnAgCu Inorganic materials 0.000 description 2
- 229910008599 TiW Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 238000009792 diffusion process Methods 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
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- 229910052759 nickel Inorganic materials 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Planar Illumination Modules (AREA)
Abstract
The invention provides a backlight module, a manufacturing method thereof and a display device, relates to the technical field of display, and aims to solve the problem that the light mixing of a local area or a large area is not uniform in the conventional backlight module. The manufacturing method of the backlight module comprises the following steps: forming a plurality of first pad groups on a substrate, each first pad group including at least two first pads; forming a solder layer, wherein the solder layer comprises solder patterns which are connected with the first bonding pads in a one-to-one correspondence manner; performing first reflow soldering to form a solder pattern into a solder bump structure; placing a corresponding light-emitting chip on one side, back to the substrate, of the solder bump structure corresponding to each first bonding pad group, wherein the second bonding pads included in the light-emitting chip are connected with the corresponding solder bump structures in a one-to-one correspondence manner; and performing second reflow soldering to ensure that the second bonding pads and the corresponding first bonding pads included in the light-emitting chip are electrically connected in a one-to-one correspondence mode through the corresponding solder bump structures. The manufacturing method of the backlight module is used for manufacturing the backlight module.
Description
Technical Field
The invention relates to the technical field of display, in particular to a backlight module, a manufacturing method of the backlight module and a display device.
Background
The traditional miniature light emitting diode (Mini LED) backlight module mainly comprises a substrate and Mini LED chips distributed on the substrate in an array mode, when the backlight module is manufactured, firstly, solder paste is printed on the substrate, then the Mini LED chips are placed on the printed solder paste, and then the Mini LED chips are fixed on the substrate through a reflow soldering process.
However, in the reflow soldering process, the solder flux and the solvent in the solder paste volatilize and the solder paste melts, which easily causes pulling of the light emitting chip, so that the light emitting chip placed on the solder paste is inclined, and the light emitting chip and the surface of the substrate form a certain angle, thereby causing the backlight module to have uneven light mixing in a local or large area.
Disclosure of Invention
The invention aims to provide a backlight module, a manufacturing method thereof and a display device, which are used for solving the problems that in the conventional backlight module, soldering flux and solvent in solder paste volatilize and the solder paste is melted in a reflow soldering process to easily pull a light-emitting chip, so that the light-emitting chip placed on the solder paste is inclined, the light-emitting chip forms a certain angle with the surface of a substrate, and further the backlight module has uneven light mixing in a local or large area.
In order to achieve the above purpose, the invention provides the following technical scheme:
a first aspect of the present invention provides a method for manufacturing a backlight module, the method comprising:
forming a plurality of first pad groups on a substrate, each of the first pad groups including at least two first pads;
forming a solder layer on one side of the plurality of first bonding pad groups, which faces away from the substrate, wherein the solder layer comprises solder patterns connected with the first bonding pads in a one-to-one correspondence manner, and the orthographic projection of the solder patterns on the substrate is positioned inside the orthographic projection of the corresponding first bonding pads on the substrate;
performing first reflow soldering on the solder layer to form the solder pattern into a solder bump structure;
placing a corresponding light-emitting chip on one side, back to the substrate, of the solder bump structure corresponding to each first bonding pad group, wherein the second bonding pads included in the light-emitting chip are connected with the corresponding solder bump structures in a one-to-one correspondence manner;
and carrying out second reflow soldering on the solder bump structures provided with the light-emitting chips, so that the second bonding pads included in the light-emitting chips are electrically connected with the first bonding pads in the corresponding first bonding pad groups in a one-to-one correspondence manner through the corresponding solder bump structures.
Optionally, the step of forming a solder layer on a side of the plurality of first pad groups facing away from the substrate specifically includes:
manufacturing a photoresist layer on one side of the plurality of first bonding pad groups, which faces away from the substrate;
performing a composition process on the photoresist layer, and forming openings corresponding to the first bonding pads one to one on the photoresist layer, wherein the orthographic projections of the openings on the substrate are positioned inside the orthographic projections of the corresponding first bonding pads on the substrate;
forming the solder pattern inside each opening by using an electroplating process;
and removing the residual photoresist layer.
Optionally, the step of forming a solder layer on a side of the plurality of first pad groups facing away from the substrate specifically includes:
attaching a steel mesh with windows to one side of the substrate, where the first bonding pads are formed, wherein the windows on the steel mesh correspond to the first bonding pads one to one, and the orthographic projection of the windows on the substrate is located inside the orthographic projection of the corresponding first bonding pads on the substrate;
printing solder on one side of the steel mesh, which is opposite to the substrate, so that the solder forms corresponding solder patterns in the windows;
the steel mesh is removed.
Optionally, the manufacturing method further includes:
after the solder layer is subjected to first reflow soldering to form a solder bump structure, a reflecting layer is manufactured on one side of the substrate where the solder bump structure is formed, the reflecting layer comprises openings corresponding to the solder bump structures one to one, the orthographic projection of the openings on the substrate surrounds the orthographic projection of the corresponding solder bump structures on the substrate, and in the direction perpendicular to the substrate, the height of the surface of the reflecting layer, back to the substrate, is lower than or equal to the height of the surface of the solder bump structure, back to the substrate.
Optionally, the manufacturing method further includes:
before forming a solder layer on one side of the first bonding pad groups, which faces away from the substrate, a seed layer is manufactured on one side of the first bonding pad groups, which faces away from the substrate, wherein the seed layer comprises seed patterns in one-to-one correspondence with the first bonding pads, and the orthographic projection of the seed patterns on the substrate is positioned inside the orthographic projection of the corresponding first bonding pads on the substrate;
the seed pattern comprises an adhesion sub-pattern, a blocking sub-pattern and a bump wetting sub-pattern which are sequentially stacked along the direction far away from the substrate.
Based on the above technical solution of the method for manufacturing a backlight module, a second aspect of the present invention provides a backlight module manufactured by the above method, where the backlight module includes:
a substrate;
a plurality of first pad groups disposed on the substrate, each of the first pad groups including at least two first pads;
the solder bump structures are arranged on one side, back to the substrate, of the first pad group, the solder bump structures are electrically connected with the first pads in a one-to-one correspondence mode, and the orthographic projections of the solder bump structures on the substrate are located inside the orthographic projections of the corresponding first pads on the substrate;
the light-emitting chips are arranged on one side, back to the substrate, of the solder bump structure, the light-emitting chips are in one-to-one correspondence with the first bonding pad groups, and the second bonding pads of the light-emitting chips are electrically connected with the first bonding pads in the corresponding first bonding pad groups in a one-to-one correspondence mode through the corresponding solder bump structures.
Optionally, the backlight module further includes:
the reflecting layer is arranged on one side of the substrate, on which the solder bump structures are formed, and comprises openings in one-to-one correspondence with the solder bump structures, orthographic projections of the openings on the substrate surround orthographic projections of the corresponding solder bump structures on the substrate, and in a direction perpendicular to the substrate, the height of the reflecting layer, back to the surface of the substrate, is lower than or equal to the height of the solder bump structures, back to the surface of the substrate.
Optionally, the inner side wall of the opening is attached to the corresponding side wall of the solder bump structure.
Optionally, the backlight module further includes:
the seed layer is arranged between the plurality of first welding pad groups and the solder bump structure, the seed layer comprises seed patterns which are in one-to-one correspondence with the first welding pads, and the orthographic projection of the seed patterns on the substrate is positioned inside the orthographic projection of the corresponding first welding pads on the substrate; the seed pattern comprises an adhesion sub-pattern, a blocking sub-pattern and a bump wetting sub-pattern which are sequentially stacked along the direction far away from the substrate.
Based on the above technical solution of the backlight module, a third aspect of the invention provides a display device, which includes the backlight module.
According to the technical scheme provided by the invention, the inclination proportion and probability of the light-emitting chip are reduced by arranging the solder bump structure, so that the light mixing uniformity of the backlight module is effectively improved. Moreover, the solder bump structure has small pulling on the light-emitting chip, and the light-emitting chip can basically keep the original placement position, so that the risks of electric leakage, short circuit and the like of the fixed light-emitting chip are well reduced.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a first flowchart of a method for manufacturing a backlight module according to an embodiment of the invention;
fig. 2 is a second flowchart of a method for manufacturing a backlight module according to an embodiment of the invention;
fig. 3 is a schematic structural diagram of a backlight module according to an embodiment of the invention;
fig. 4 is a schematic top view of a backlight module according to an embodiment of the invention.
Detailed Description
In order to further explain the backlight module, the manufacturing method thereof and the display device provided by the embodiment of the invention, the following detailed description is made with reference to the accompanying drawings.
In the related art, when the Mini LED is used as a light source structure in the backlight module, the backlight module has more and more Mini LEDs, and as the size of the Mini LED chip is continuously reduced, higher requirements are provided for the process difficulty of manufacturing the backlight module.
When a traditional micro light-emitting diode (Mini LED) backlight module is manufactured, firstly, solder paste is printed on a substrate, then a Mini LED chip is placed on the printed solder paste, and then the Mini LED chip is fixed on the substrate through a reflow soldering process, so that the manufacturing method has the following problems at present:
(1) in the traditional solder paste printing process, solder paste is easy to pull in the reflow soldering process, so that a light-emitting chip placed on the solder paste is easy to incline, and the backlight module has uneven light mixing in local or large area; in addition, due to the problems of printing and die bonding precision, the light emitting chip cannot be guaranteed to be placed right above the solder paste before reflow soldering, and the inclination or rotation of the light emitting chip can aggravate the movement and inclination of the chip after reflow soldering.
(2) The solder paste comprises alloy components, the alloy basically covers the whole bonding pad after reflow soldering of the solder paste, the periphery of the light-emitting chip is generally overflowed, the reflectivity of the solder paste alloy is not high, soldering flux possibly remains after reflow soldering, the reflectivity below the light-emitting chip is reduced, and therefore the brightness of the backlight module is affected.
(3) The size of a bonding pad of the light-emitting chip and the interval between the anode and the cathode are very small, the volume ratio of the solder paste for printing is only 50%, the requirement on the printing quality is high, and the conditions of continuous tin, missing printing, less printing, uneven solder paste and the like are easily caused in the actual process of printing the solder paste.
(4) In the conventional backlight module, even if the reflection structure is arranged between the light emitting chip and the substrate, the window opening of the reflection structure is much larger than that of the chip under the consideration of the influence of precision and process, namely, the reflection structure has a certain distance from the light emitting chip, and the light which is directly emitted and reflected to the bottom of the light emitting chip is basically absorbed and cannot be utilized, so that the brightness of the backlight module is reduced.
Referring to fig. 1 to 3, an embodiment of the invention provides a method for manufacturing a backlight module, the method including:
step S101, forming a plurality of first pad groups on a substrate 10, each of the first pad groups including at least two first pads 20;
step S102, forming a solder layer on a side of the plurality of first pad groups facing away from the substrate 10, where the solder layer includes solder patterns connected to the first pads 20 in a one-to-one correspondence manner, and an orthogonal projection of the solder pattern on the substrate 10 is located inside an orthogonal projection of the corresponding first pad 20 on the substrate 10;
step S103, performing a first reflow of the solder layer to form the solder pattern into a solder bump structure 31;
step S104, placing a corresponding light emitting chip 50 on a side of the solder bump structure 31 corresponding to each first pad group, which faces away from the substrate 10, wherein the second pads 40 included in the light emitting chip 50 are connected to the corresponding solder bump structures 31 in a one-to-one correspondence manner;
step S105, performing a second reflow on the solder bump structure 31 on which the light emitting chip 50 is placed, so that the second bonding pad 40 included in the light emitting chip 50 is electrically connected to the first bonding pad 20 in the corresponding first bonding pad group in a one-to-one correspondence manner through the corresponding solder bump structure 31.
Specifically, the substrate 10 may be a flexible circuit board or a printed circuit board, or may be a glass substrate.
As each first bonding pad group is correspondingly welded with one light-emitting chip 50, the setting position of the first bonding pad group is the setting position of the light-emitting chip 50, and exemplarily, the first bonding pad groups are distributed in an array manner, so that the light-emitting chips 50 welded on the first bonding pad groups can be distributed in an array manner; in addition, the number of the first bonding pads 20 included in the first bonding pad group is the same as the number of the second bonding pads 40 included in the light emitting chip 50 to be bonded, and the first bonding pads 20 and the second bonding pads 40 are connected in a one-to-one correspondence manner, so that the number of the first bonding pads 20 included in the first bonding pad group can be determined according to the number of the second bonding pads 40 included in the light emitting chip 50 to be actually used; for example, when the light emitting chip 50 employs a Mini LED chip, since the Mini LED chip includes two second pads 40, the first pad group may be configured to include two first pads 20. It is to be noted that the light emitting chip 50 can be specifically selected from a Mini LED chip and an LED chip, but is not limited thereto.
The first pad 20 may be made of various materials, for example: the first bonding pad 20 is made of copper metal or aluminum metal, but not limited thereto.
After the first pad group is formed, a solder layer may be formed on a side of the first pad groups facing away from the substrate 10 by evaporation, sputtering, stencil printing, or electroplating, where the solder layer may include a plurality of independent solder patterns, the solder patterns are connected to the first pads 20 in a one-to-one correspondence, and an orthogonal projection of the solder pattern on the substrate 10 may be located inside an orthogonal projection of the corresponding first pad 20 on the substrate 10, so that a risk that the solder pattern exceeds the corresponding first pad 20 when a reflow process is performed subsequently can be reduced.
The solder used In the solder layer may be selected from Sn, SnAg, SnAgCu, In alloy or other alloys, and the specific size of the solder pattern may be designed according to the actually used manufacturing process and the size of the second pad 40 of the corresponding light emitting chip 50, and for example, the size of the solder pattern may enable the thickness of the formed solder bump structure 31 In the direction perpendicular to the substrate 10 to reach several micrometers to several tens of micrometers after reflow soldering.
After the solder layer is formed, the solder layer is subjected to a first reflow process in which each solder pattern is melted and a flux and a solvent included in the solder pattern are volatilized, so that the solder pattern is formed into a solder bump structure 31.
Since the solder bump structures 31 formed by reflow soldering have a fixed shape and no surface tack, when the flip-chip light-emitting chip 50 is placed, in order to ensure that the light-emitting chip 50 does not slide on the solder bump structures 31, a flux may be printed on the surface of each solder bump structure 31 opposite to the substrate 10, and then the light-emitting chip 50 may be placed on the printed flux by a transfer method.
It should be noted that the light emitting chips 50 correspond to the first pad groups one to one, the second pads 40 included in the light emitting chips 50 correspond to the first pads 20 included in the corresponding first pad groups one to one, the solder bump structures 31 correspond to the first pads 20 one to one, and after the light emitting chips 50 are placed, the second pads 40 in the light emitting chips 50 correspond to the solder bump structures 31 disposed on the first pads 20 in the corresponding first pad groups one to one.
After the light emitting chip 50 is placed, a second reflow process is performed, in the second reflow process, the solder bump structures 31 are melted again, so that the second pads 40 included in the light emitting chip 50 and the first pads 20 in the corresponding first pad group can be soldered together by the corresponding solder bump structures 31 in a one-to-one correspondence manner, and the second pads 40 and the corresponding first pads 20 are electrically connected. It is worth noting that, since the solder bump structure 31 has undergone the first reflow soldering, when the solder bump structure 31 is subjected to the second reflow soldering, the light emitting chip 50 is pulled slightly, and the light emitting chip 50 can basically keep its original placement position, thereby solving the height unevenness problem of the light emitting chip 50, and ensuring that the light emitting angles of the light emitting chips 50 are consistent.
When the backlight module is manufactured by adopting the manufacturing method provided by the embodiment of the invention, the inclination proportion and probability of the light-emitting chip 50 are reduced by arranging the solder bump structure 31, so that the light mixing uniformity of the backlight module is effectively improved. Moreover, the solder bump structure 31 has less pulling on the light emitting chip 50, and the light emitting chip 50 can basically keep the original placement position, thereby well reducing the risks of electric leakage, short circuit and the like of the fixed light emitting chip 50.
In some embodiments, the step of forming a solder layer on a side of the plurality of first pad groups facing away from the substrate 10 specifically includes:
manufacturing a photoresist layer on one side of the plurality of first bonding pad groups, which faces away from the substrate 10;
performing a patterning process on the photoresist layer, and forming first openings corresponding to the first pads 20 on the photoresist layer one to one, wherein an orthographic projection of the first openings on the substrate 10 is located inside an orthographic projection of the corresponding first pads 20 on the substrate 10;
forming the solder pattern inside each first opening by using an electroplating process;
and removing the residual photoresist layer.
Specifically, after the plurality of first pad groups are formed on the substrate 10, a photoresist layer may be continuously formed on a side of the plurality of first pad groups facing away from the substrate 10, where the photoresist layer can cover the entire area of the substrate 10; and then, carrying out a composition process on the photoresist layer by using a mask plate, removing part of the photoresist in the photoresist layer, and forming first openings corresponding to the first bonding pads 20 on the photoresist layer one by one, wherein the orthographic projections of the first openings on the substrate 10 are positioned inside the orthographic projections of the corresponding first bonding pads 20 on the substrate 10.
It should be noted that the shape of the first opening and the depth of the first opening in the direction perpendicular to the substrate 10 determine the height and shape of the solder pattern subsequently formed in the first opening.
In addition, the orthographic projection of the first opening on the substrate 10 is located inside the orthographic projection of the corresponding first pad 20 on the substrate 10, and the method includes: the orthographic projection of the first opening on the substrate 10 is coincident with the orthographic projection of the corresponding first bonding pad 20 on the substrate 10; alternatively, an orthogonal projection of the first opening on the substrate 10 is surrounded by an orthogonal projection of the first pad 20 on the substrate 10.
After the first openings are formed, the electroplating process can be continuously utilized to form the solder patterns inside the first openings, and the solder patterns are mushroom-shaped. The electroplating process mainly comprises the following steps:
in a salt solution containing solder preplating, a substrate 10 comprising a photoresist with a first opening is used as a cathode, and the solder in the electroplating solution is deposited on the first bonding pad 20 exposed by the first opening of the photoresist by electrolysis to form the solder pattern.
After the plating process is completed, the photoresist remaining on the substrate 10 is removed.
When the solder pattern is manufactured by using the manufacturing method provided by the above embodiment, by controlling the size of the first opening in the photoresist layer and the time of the electroplating process, the size of the formed solder pattern can be controlled, and the size of the solder pattern on each first pad 20 is ensured to be consistent, so that each solder pattern is well ensured not to exceed the corresponding first pad 20 when being formed into the solder bump structure 31.
Moreover, when the manufacturing method provided by the above embodiment is adopted to manufacture the solder pattern, the solder pattern can be precisely formed on each corresponding first pad 20, and the phenomena of tin connection, missing print, few print, offset print, missing print and the like which are easy to occur in the narrow-pitch and fine-precision printing process can be eliminated, so that the die bonding quality of the light emitting chip 50 is effectively improved, the risks of electric leakage, short circuit and missing of the light emitting chip 50 are reduced, and the yield of the backlight module is improved. In addition, for the case that the adopted light emitting chip 50 is small in size, the method for manufacturing the solder pattern well reduces the difficulty of the manufacturing process and improves the performance of the product.
In some embodiments, the step of forming a solder layer on a side of the plurality of first pad groups facing away from the substrate 10 specifically includes:
attaching a steel mesh with windows to one side of the substrate 10 where the first pads 20 are formed, wherein the windows on the steel mesh correspond to the first pads 20 one to one, and the orthographic projections of the windows on the substrate 10 are located inside the orthographic projections of the corresponding first pads 20 on the substrate 10;
printing solder on one side of the steel mesh, which faces away from the substrate 10, so that the solder forms corresponding solder patterns in the windows; the steel mesh is then removed.
Specifically, a steel mesh with windows can be closely attached to the side of the substrate 10 where the first pads 20 are formed, the windows on the steel mesh can correspond to the first pads 20 one by one, and then solder is printed on the side of the steel mesh facing away from the substrate 10, so that the solder forms the corresponding solder pattern in each window.
It should be noted that, an orthographic projection of the window on the substrate 10 is located inside an orthographic projection of the corresponding first pad 20 on the substrate 10, and includes: the orthographic projection of the window on the substrate 10 is coincident with the orthographic projection of the corresponding first bonding pad 20 on the substrate 10; alternatively, the orthographic projection of the window on the substrate 10 is surrounded by the orthographic projection of the corresponding first pad 20 on the substrate 10.
When the solder pattern is manufactured by using the manufacturing method provided by the above embodiment, the size of the formed solder pattern can be controlled by controlling the size of the open window in the steel mesh, and the size of the solder pattern on each first pad 20 is ensured to be consistent, so that each solder pattern is well ensured not to exceed the corresponding first pad 20 when being formed into the solder bump structure 31.
Moreover, when the manufacturing method provided by the above embodiment is adopted to manufacture the solder pattern, the solder pattern can be precisely formed on each corresponding first pad 20, and the phenomena of tin connection, missing print, few print, offset print, missing print and the like which are easy to occur in the narrow-pitch and fine-precision printing process can be eliminated, so that the die bonding quality of the light emitting chip 50 is effectively improved, the risks of electric leakage, short circuit and missing of the light emitting chip 50 are reduced, and the yield of the backlight module is improved.
In addition, the above-described method of forming the solder pattern is also applicable to the case where the size of the light emitting chip 50 to be used is small.
As shown in fig. 4, in some embodiments, the manufacturing method further comprises:
after the solder layer is reflowed for the first time to form a solder bump structure 31, a reflective layer is manufactured on one side of the substrate 10 where the solder bump structure 31 is formed, the reflective layer includes second openings corresponding to the solder bump structures 31 one to one, an orthographic projection of the second openings on the substrate 10 surrounds an orthographic projection of the corresponding solder bump structures 31 on the substrate 10, and in a direction perpendicular to the substrate 10, a height of a surface of the reflective layer 70, which faces away from the substrate 10, is lower than or equal to a height of a surface of the solder bump structures 31, which faces away from the substrate 10.
Specifically, the reflective layer 70 may be made of a material having a high reflectivity, which includes, for example: white oil, high reflectance white glue, and the like, but not limited thereto.
The reflective layer 70 may be fabricated in various ways, for example, by coating a layer of high-reflectivity white glue on the substrate by dispensing or coating; meanwhile, the reflective layer may include second openings corresponding to the solder bump structures 31 one to one, and in a direction perpendicular to the substrate 10, a height of the surface of the reflective layer 70 facing away from the substrate 10 is lower than or equal to a height of the surface of the solder bump structures 31 facing away from the substrate 10, so that the surface of the solder bump structures 31 facing away from the substrate 10 protrudes out of the reflective layer 70, so as to ensure that the second pads 40 of the light emitting chip 50 can be well soldered to the solder bump structures 31.
Arranging an orthographic projection of the second opening on the substrate 10 to surround an orthographic projection of the corresponding solder bump structure 31 on the substrate 10, so that the reflective layer 70 can be formed around each solder bump structure 31; further, the reflective layer 70 may be disposed to fill the entire module surface, i.e. the inner sidewall of each second opening can be attached to the corresponding sidewall of the solder bump structure 31; by adopting the arrangement mode, the reflective layer 70 is basically connected with the light-emitting chip 50 in a seamless manner, so that the bottom reflection area of light rays emitted by the light-emitting chip 50 is effectively increased, and the brightness of the backlight module is improved.
In the manufacturing method provided by the above embodiment, since the reflection area of the light emitted from the light emitting chip 50 is effectively increased, even for the backlight module including a small size and a large number of light emitting chips 50 and the backlight module having the light emitting chips 50 inclined, the reflection area of the manufactured reflection layer 70 can be increased to the maximum, and the brightness of the backlight module can be increased.
In addition, after the solder bump structure 31 is formed, the reflective layer 70 is formed before the second reflow soldering is performed, so that in the process of the second reflow soldering, the reflective layer 70 can limit the position of the melted solder bump structure 31, thereby better avoiding the melted solder bump structure 31 from dragging the light emitting chip 50 in the process of the second reflow soldering, and further improving the uniformity of the backlight module light mixing.
As shown in fig. 3, in some embodiments, the manufacturing method further comprises:
before forming a solder layer on one side of the plurality of first pad groups facing away from the substrate 10, manufacturing a seed layer on one side of the plurality of first pad groups facing away from the substrate 10, where the seed layer includes seed patterns 60 corresponding to the first pads 20 one by one, and an orthogonal projection of the seed patterns 60 on the substrate 10 is located inside an orthogonal projection of the corresponding first pads 20 on the substrate 10;
the seed pattern 60 includes an adhesion sub-pattern, a barrier sub-pattern, and a bump wetting sub-pattern, which are sequentially stacked in a direction away from the substrate 10.
Specifically, after the first pad group is fabricated on the substrate 10, and before the solder layer is formed on the side of the plurality of first pad groups facing away from the substrate 10, a seed layer may be fabricated on the side of the plurality of first pad groups facing away from the substrate 10, where the seed layer includes seed patterns 60 corresponding to the first pads 20 one by one, and each of the seed patterns 60 includes an adhesion sub-pattern, a blocking sub-pattern, and a bump wetting sub-pattern, which are sequentially stacked in a direction away from the substrate 10; the adhesion subpattern can be made of Cr, Ti, V, TiW and other materials, the barrier subpattern can be made of Ni, Cu, pd, Pt and other materials, and the bump wetting subpattern can be made of Au or an Ag/Au alloy film.
When the adhesion subpattern, the barrier subpattern and the bump wetting subpattern are manufactured, processes such as sputtering, evaporation, chemical plating, electroplating and the like can be specifically adopted, but the invention is not limited to the processes.
It is noted that, in the case of forming the seed layer on the first pad 20, a subsequently fabricated solder pattern should be located on a surface of the corresponding seed pattern 60 facing away from the substrate 10.
The seed layer mainly plays a role in adhesion and diffusion blocking in the backlight module, in more detail, the adhesion sub-pattern mainly plays a role in adhesion, the blocking sub-pattern mainly plays a role in blocking the solder pattern from diffusing towards the substrate direction, and the bump wetting sub-pattern mainly plays a role in preventing oxidation.
The embodiment of the present invention further provides a backlight module, which is manufactured by the manufacturing method provided by the above embodiment, and the backlight module includes:
a substrate 10;
a plurality of first pad groups disposed on the substrate 10, each of the first pad groups including at least two first pads 20;
the solder bump structures 31 are arranged on one side of the first pad group, which faces away from the substrate 10, the solder bump structures 31 are electrically connected with the first pads 20 in a one-to-one correspondence manner, and the orthographic projection of the solder bump structures 31 on the substrate 10 is located inside the orthographic projection of the corresponding first pads 20 on the substrate 10;
the light emitting chips 50 are disposed on a side of the solder bump structure 31 facing away from the substrate 10, the light emitting chips 50 correspond to the first pad groups one by one, and the second pads 40 included in the light emitting chips 50 are electrically connected to the first pads 20 in the corresponding first pad groups one by one through the corresponding solder bump structures 31.
Specifically, the substrate 10 may be a flexible circuit board or a printed circuit board, or may be a glass substrate.
As each first bonding pad group is correspondingly welded with one light-emitting chip 50, the setting position of the first bonding pad group is the setting position of the light-emitting chip 50, and exemplarily, the first bonding pad groups are distributed in an array manner, so that the light-emitting chips 50 welded on the first bonding pad groups can be distributed in an array manner; in addition, the number of the first bonding pads 20 included in the first bonding pad group is the same as the number of the second bonding pads 40 included in the light emitting chip 50 to be bonded, and the first bonding pads 20 and the second bonding pads 40 are connected in a one-to-one correspondence manner, so that the number of the first bonding pads 20 included in the first bonding pad group can be determined according to the number of the second bonding pads 40 included in the light emitting chip 50 to be actually used; for example, when the light emitting chip 50 employs a Mini LED chip, since the Mini LED chip includes two second pads 40, the first pad group may be configured to include two first pads 20. It is to be noted that the light emitting chip 50 can be specifically selected from a Mini LED chip and an LED chip, but is not limited thereto.
The first pad 20 may be made of various materials, for example: the first bonding pad 20 is made of copper metal or aluminum metal, but not limited thereto.
After the first pad group is formed, a solder layer may be formed on a side of the first pad groups facing away from the substrate 10 by evaporation, sputtering, stencil printing, or electroplating, where the solder layer may include a plurality of independent solder patterns, the solder patterns are connected to the first pads 20 in a one-to-one correspondence, and an orthogonal projection of the solder pattern on the substrate 10 may be located inside an orthogonal projection of the corresponding first pad 20 on the substrate 10, so that a risk that the solder pattern exceeds the corresponding first pad 20 when a reflow process is performed subsequently can be reduced.
The solder used In the solder layer may be selected from Sn, SnAg, SnAgCu, In alloy or other alloys, and the specific size of the solder pattern may be designed according to the actually used manufacturing process and the size of the second pad 40 of the corresponding light emitting chip 50, and for example, the size of the solder pattern may enable the thickness of the formed solder bump structure 31 In the direction perpendicular to the substrate 10 to reach several micrometers to several tens of micrometers after reflow soldering.
After the solder layer is formed, the solder layer is subjected to a first reflow process in which each solder pattern is melted and a flux and a solvent included in the solder pattern are volatilized, so that the solder pattern is formed into a solder bump structure 31.
Since the solder bump structures 31 formed by reflow soldering have a fixed shape and no surface tack, when the flip-chip light-emitting chip 50 is placed, in order to ensure that the light-emitting chip 50 does not slide on the solder bump structures 31, a flux may be printed on the surface of each solder bump structure 31 opposite to the substrate 10, and then the light-emitting chip 50 may be placed on the printed flux by a transfer method.
It should be noted that the light emitting chips 50 correspond to the first pad groups one to one, the second pads 40 included in the light emitting chips 50 correspond to the first pads 20 included in the corresponding first pad groups one to one, the solder bump structures 31 correspond to the first pads 20 one to one, and after the light emitting chips 50 are placed, the second pads 40 in the light emitting chips 50 correspond to the solder bump structures 31 disposed on the first pads 20 in the corresponding first pad groups one to one.
After the light emitting chip 50 is placed, a second reflow process is performed, in the second reflow process, the solder bump structures 31 are melted again, so that the second pads 40 included in the light emitting chip 50 and the first pads 20 in the corresponding first pad group can be soldered together by the corresponding solder bump structures 31 in a one-to-one correspondence manner, and the second pads 40 and the corresponding first pads 20 are electrically connected. It is worth noting that, since the solder bump structure 31 has undergone the first reflow soldering, when the solder bump structure 31 is subjected to the second reflow soldering, the light emitting chip 50 is pulled slightly, and the light emitting chip 50 can basically keep its original placement position, thereby solving the height unevenness problem of the light emitting chip 50, and ensuring that the light emitting angles of the light emitting chips 50 are consistent.
In the backlight module provided by the embodiment of the invention, the proportion and the probability of inclination of the light emitting chip 50 are reduced by arranging the solder bump structure 31, so that the light mixing uniformity of the backlight module is effectively improved. Moreover, the solder bump structure 31 has less pulling on the light emitting chip 50, and the light emitting chip 50 can basically keep the original placement position, thereby well reducing the risks of electric leakage, short circuit and the like of the fixed light emitting chip 50.
In some embodiments, the backlight module further comprises:
the reflecting layer is arranged on one side of the substrate 10 where the solder bump structures 31 are formed, the reflecting layer includes openings corresponding to the solder bump structures 31 one by one, the orthographic projection of the openings on the substrate 10 surrounds the orthographic projection of the corresponding solder bump structures 31 on the substrate 10, and in the direction perpendicular to the substrate 10, the height of the reflecting layer 70, which is back to the surface of the substrate 10, is lower than or equal to the height of the solder bump structures 31, which is back to the surface of the substrate 10.
In some embodiments, the inner sidewall of the opening is attached to the corresponding sidewall of the solder bump structure 31.
Specifically, the reflective layer 70 may be made of a material having a high reflectivity, which includes, for example: white oil, high reflectance white glue, and the like, but not limited thereto.
The reflective layer 70 may be fabricated in various ways, for example, by coating a layer of high-reflectivity white glue on the substrate by dispensing or coating; meanwhile, the reflective layer may include second openings corresponding to the solder bump structures 31 one to one, and in a direction perpendicular to the substrate 10, a height of the surface of the reflective layer 70 facing away from the substrate 10 is lower than or equal to a height of the surface of the solder bump structures 31 facing away from the substrate 10, so that the surface of the solder bump structures 31 facing away from the substrate 10 protrudes out of the reflective layer 70, so as to ensure that the second pads 40 of the light emitting chip 50 can be well soldered to the solder bump structures 31.
Arranging an orthographic projection of the second opening on the substrate 10 to surround an orthographic projection of the corresponding solder bump structure 31 on the substrate 10, so that the reflective layer 70 can be formed around each solder bump structure 31; further, the reflective layer 70 may be disposed to fill the entire module surface, i.e. the inner sidewall of each second opening can be attached to the corresponding sidewall of the solder bump structure 31; by adopting the arrangement mode, the reflective layer 70 is basically connected with the light-emitting chip 50 in a seamless manner, so that the bottom reflection area of light rays emitted by the light-emitting chip 50 is effectively increased, and the brightness of the backlight module is improved.
In the backlight module provided in the above embodiment, since the reflection area of the light emitted from the light emitting chip 50 is effectively increased, even for the backlight module including a small size and a large number of light emitting chips 50 and the backlight module having the light emitting chips 50 inclined, the reflection area of the manufactured reflection layer 70 can be increased maximally, thereby increasing the brightness of the backlight module.
In addition, after the solder bump structure 31 is formed, the reflective layer 70 is formed before the second reflow soldering is performed, so that in the process of the second reflow soldering, the reflective layer 70 can limit the position of the melted solder bump structure 31, thereby better avoiding the melted solder bump structure 31 from dragging the light emitting chip 50 in the process of the second reflow soldering, and further improving the uniformity of the backlight module light mixing.
In some embodiments, the backlight module further comprises:
a seed layer disposed between the plurality of first pad groups and the solder bump structure 31, wherein the seed layer includes seed patterns 60 corresponding to the first pads 20 one to one, and an orthogonal projection of the seed patterns 60 on the substrate 10 is located inside an orthogonal projection of the corresponding first pads 20 on the substrate 10; the seed pattern 60 includes an adhesion sub-pattern, a barrier sub-pattern, and a bump wetting sub-pattern, which are sequentially stacked in a direction away from the substrate 10.
Specifically, after the first pad group is fabricated on the substrate 10, and before the solder layer is formed on the side of the plurality of first pad groups facing away from the substrate 10, a seed layer may be fabricated on the side of the plurality of first pad groups facing away from the substrate 10, where the seed layer includes seed patterns 60 corresponding to the first pads 20 one by one, and each of the seed patterns 60 includes an adhesion sub-pattern, a blocking sub-pattern, and a bump wetting sub-pattern, which are sequentially stacked in a direction away from the substrate 10; the adhesion subpattern can be made of Cr, Ti, V, TiW and other materials, the barrier subpattern can be made of Ni, Cu, pd, Pt and other materials, and the bump wetting subpattern can be made of Au or an Ag/Au alloy film.
When the adhesion subpattern, the barrier subpattern and the bump wetting subpattern are manufactured, processes such as sputtering, evaporation, chemical plating, electroplating and the like can be specifically adopted, but the invention is not limited to the processes.
It is noted that, in the case of forming the seed layer on the first pad 20, a subsequently fabricated solder pattern should be located on a surface of the corresponding seed pattern 60 facing away from the substrate 10.
The seed layer mainly plays a role in adhesion and diffusion blocking in the backlight module, in more detail, the adhesion sub-pattern mainly plays a role in adhesion, the blocking sub-pattern mainly plays a role in blocking the solder pattern from diffusing towards the substrate direction, and the bump wetting sub-pattern mainly plays a role in preventing oxidation.
The embodiment of the invention also provides a display device which comprises the backlight module provided by the embodiment.
In the backlight module provided by the above embodiment, the ratio and probability of inclination of the light emitting chip 50 are reduced by arranging the solder bump structure 31, so that the uniformity of light mixing of the backlight module is effectively improved. Moreover, the solder bump structure 31 has less pulling on the light emitting chip 50, and the light emitting chip 50 can basically keep the original placement position, so that the risks of electric leakage, short circuit and the like of the fixed light emitting chip 50 are well reduced; therefore, the display device provided by the embodiment of the invention has the beneficial effects when the display device comprises the backlight module, and the description is omitted here.
The display device may be: the display device comprises a television, a display, a digital photo frame, a mobile phone, a tablet personal computer and any other product or component with a display function, wherein the display device further comprises a flexible circuit board, a printed circuit board, a back plate and the like.
It should be noted that, in the present specification, all the embodiments are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, as for the method embodiments, since they are substantially similar to the product embodiments, they are described simply, and reference may be made to the partial description of the product embodiments for relevant points.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected," "coupled," or "connected," and the like, are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.
In the foregoing description of embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A method for manufacturing a backlight module is characterized by comprising the following steps:
forming a plurality of first pad groups on a substrate, each of the first pad groups including at least two first pads;
forming a solder layer on one side of the plurality of first bonding pad groups, which faces away from the substrate, wherein the solder layer comprises solder patterns connected with the first bonding pads in a one-to-one correspondence manner, and the orthographic projection of the solder patterns on the substrate is positioned inside the orthographic projection of the corresponding first bonding pads on the substrate;
performing first reflow soldering on the solder layer to form the solder pattern into a solder bump structure;
placing a corresponding light-emitting chip on one side, back to the substrate, of the solder bump structure corresponding to each first bonding pad group, wherein the second bonding pads included in the light-emitting chip are connected with the corresponding solder bump structures in a one-to-one correspondence manner;
and carrying out second reflow soldering on the solder bump structures provided with the light-emitting chips, so that the second bonding pads included in the light-emitting chips are electrically connected with the first bonding pads in the corresponding first bonding pad groups in a one-to-one correspondence manner through the corresponding solder bump structures.
2. The method according to claim 1, wherein the step of forming a solder layer on a side of the first pad groups facing away from the substrate comprises:
manufacturing a photoresist layer on one side of the plurality of first bonding pad groups, which faces away from the substrate;
performing a composition process on the photoresist layer, and forming openings corresponding to the first bonding pads one to one on the photoresist layer, wherein the orthographic projections of the openings on the substrate are positioned inside the orthographic projections of the corresponding first bonding pads on the substrate;
forming the solder pattern inside each opening by using an electroplating process;
and removing the residual photoresist layer.
3. The method according to claim 1, wherein the step of forming a solder layer on a side of the first pad groups facing away from the substrate comprises:
attaching a steel mesh with windows to one side of the substrate, where the first bonding pads are formed, wherein the windows on the steel mesh correspond to the first bonding pads one to one, and the orthographic projection of the windows on the substrate is located inside the orthographic projection of the corresponding first bonding pads on the substrate;
printing solder on one side of the steel mesh, which is opposite to the substrate, so that the solder forms corresponding solder patterns in the windows;
the steel mesh is removed.
4. The method of claim 1, further comprising:
after the solder layer is subjected to first reflow soldering to form a solder bump structure, a reflecting layer is manufactured on one side of the substrate where the solder bump structure is formed, the reflecting layer comprises openings corresponding to the solder bump structures one to one, the orthographic projection of the openings on the substrate surrounds the orthographic projection of the corresponding solder bump structures on the substrate, and in the direction perpendicular to the substrate, the height of the surface of the reflecting layer, back to the substrate, is lower than or equal to the height of the surface of the solder bump structure, back to the substrate.
5. The method of claim 1, further comprising:
before forming a solder layer on one side of the first bonding pad groups, which faces away from the substrate, a seed layer is manufactured on one side of the first bonding pad groups, which faces away from the substrate, wherein the seed layer comprises seed patterns in one-to-one correspondence with the first bonding pads, and the orthographic projection of the seed patterns on the substrate is positioned inside the orthographic projection of the corresponding first bonding pads on the substrate;
the seed pattern comprises an adhesion sub-pattern, a blocking sub-pattern and a bump wetting sub-pattern which are sequentially stacked along the direction far away from the substrate.
6. A backlight module manufactured by the method according to any one of claims 1 to 5, the backlight module comprising:
a substrate;
a plurality of first pad groups disposed on the substrate, each of the first pad groups including at least two first pads;
the solder bump structures are arranged on one side, back to the substrate, of the first pad group, the solder bump structures are electrically connected with the first pads in a one-to-one correspondence mode, and the orthographic projections of the solder bump structures on the substrate are located inside the orthographic projections of the corresponding first pads on the substrate;
the light-emitting chips are arranged on one side, back to the substrate, of the solder bump structure, the light-emitting chips are in one-to-one correspondence with the first bonding pad groups, and the second bonding pads of the light-emitting chips are electrically connected with the first bonding pads in the corresponding first bonding pad groups in a one-to-one correspondence mode through the corresponding solder bump structures.
7. The backlight module according to claim 6, further comprising:
the reflecting layer is arranged on one side of the substrate, on which the solder bump structures are formed, and comprises openings in one-to-one correspondence with the solder bump structures, orthographic projections of the openings on the substrate surround orthographic projections of the corresponding solder bump structures on the substrate, and in a direction perpendicular to the substrate, the height of the reflecting layer, back to the surface of the substrate, is lower than or equal to the height of the solder bump structures, back to the surface of the substrate.
8. The backlight module as claimed in claim 7, wherein the inner sidewall of the opening is attached to the corresponding sidewall of the solder bump structure.
9. The backlight module according to claim 6, further comprising:
the seed layer is arranged between the plurality of first welding pad groups and the solder bump structure, the seed layer comprises seed patterns which are in one-to-one correspondence with the first welding pads, and the orthographic projection of the seed patterns on the substrate is positioned inside the orthographic projection of the corresponding first welding pads on the substrate; the seed pattern comprises an adhesion sub-pattern, a blocking sub-pattern and a bump wetting sub-pattern which are sequentially stacked along the direction far away from the substrate.
10. A display device comprising the backlight module according to any one of claims 6 to 9.
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| CN112782889A (en) * | 2021-02-10 | 2021-05-11 | Tcl华星光电技术有限公司 | Backlight module, manufacturing method thereof and liquid crystal display device |
| US12001095B2 (en) | 2021-02-10 | 2024-06-04 | Tcl China Star Optoelectronics Technology Co., Ltd. | Backlight module, manufacturing method thereof, and liquid crystal display device |
| CN112782889B (en) * | 2021-02-10 | 2022-03-08 | Tcl华星光电技术有限公司 | Backlight module, manufacturing method thereof and liquid crystal display device |
| CN113113395A (en) * | 2021-03-25 | 2021-07-13 | Tcl华星光电技术有限公司 | Substrate and method for manufacturing light-emitting substrate |
| CN113193094A (en) * | 2021-04-27 | 2021-07-30 | 成都辰显光电有限公司 | Batch transfer method and display panel |
| CN113193094B (en) * | 2021-04-27 | 2023-03-21 | 成都辰显光电有限公司 | Batch transfer method and display panel |
| CN113629065A (en) * | 2021-06-30 | 2021-11-09 | 合肥京东方星宇科技有限公司 | Driving back plate, chip, light-emitting substrate, manufacturing method of light-emitting substrate and display device |
| CN115933246A (en) * | 2021-08-05 | 2023-04-07 | 海信视像科技股份有限公司 | Display device |
| CN115933246B (en) * | 2021-08-05 | 2024-05-31 | 海信视像科技股份有限公司 | Display device |
| WO2023019628A1 (en) * | 2021-08-18 | 2023-02-23 | Tcl华星光电技术有限公司 | Backlight module and manufacturing method therefor, and display panel |
| US11852917B2 (en) | 2021-08-18 | 2023-12-26 | Tcl China Star Optoelectronics Technology Co., Ltd. | Backlight module and preparation method therefor, and display panel |
| WO2023159387A1 (en) * | 2022-02-23 | 2023-08-31 | 京东方科技集团股份有限公司 | Array substrate and light-emitting device |
| CN114938581A (en) * | 2022-05-12 | 2022-08-23 | 京东方科技集团股份有限公司 | Backboard, mask plate, electronic device and manufacturing method of electronic device |
| WO2023240576A1 (en) * | 2022-06-17 | 2023-12-21 | 厦门市芯颖显示科技有限公司 | Miniature electronic component, binding backplane, and binding assembly |
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