CN111244087B - Field-effect charging type semiconductor starting device integrating polysilicon resistor and diode - Google Patents
Field-effect charging type semiconductor starting device integrating polysilicon resistor and diode Download PDFInfo
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 77
- 230000005669 field effect Effects 0.000 title claims abstract description 73
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 47
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 239000003990 capacitor Substances 0.000 claims abstract description 28
- 238000002955 isolation Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 210000003850 cellular structure Anatomy 0.000 claims abstract description 11
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L27/0203—Particular design considerations for integrated circuits
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- H—ELECTRICITY
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- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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Abstract
A rechargeable semiconductor starting device of a field effect transistor integrating a polycrystalline silicon resistor and a diode comprises the field effect transistor, the polycrystalline silicon resistor, a capacitor, a feedback control module and an electronic switch, wherein the field effect transistor comprises a semiconductor substrate, a lightly doped epitaxial layer located on the substrate, a cellular structure, a terminal structure and an isolation structure located in the lightly doped epitaxial layer. The semiconductor starting device controls the on and off of the field effect transistor through the grid electrode of the field effect transistor, and can reduce the power consumption and the heat productivity of the resistor only by a small driving current; and the resistor is connected to the input end of the starting circuit through the polysilicon diode, so that the field effect transistor can be effectively prevented from being mistakenly started due to the fluctuation of the input voltage to cause unnecessary power consumption. When the output voltage reaches a preset value, the feedback control module controls the electronic switch to be switched on, so that the grid electrode of the field effect transistor is grounded, the field effect transistor is switched off, charging is stopped, only small leakage current exists, and the aims of reducing loss and improving power supply efficiency are fulfilled.
Description
Technical Field
The invention relates to an integrated circuit starting device, in particular to a field effect tube charging type semiconductor starting device integrating a polysilicon resistor and a diode and a manufacturing method thereof.
Background
The starting circuit of the switching power supply is a commonly used starting device in an integrated circuit, and the structure (or basic principle) of most of the starting circuits of the switching power supply at present is shown in fig. 1, and comprises a resistor R1, a capacitor C1, a zener diode D1, an auxiliary winding N1, a diode D2 and a control IC, and the working principle is as follows: at the moment of starting the power supply, an input voltage Vin charges a capacitor C1 through a resistor R1, the current flowing through the resistor R1 is larger than the starting current of a control IC, the voltage of the capacitor C1 rises to the normal working voltage of the control IC, the control IC starts to work, when the output voltage Vout of the starting circuit is stable, the voltage generated by an auxiliary winding N1 is rectified by a diode D2 and filtered by the capacitor C1 to supply power to the control IC, VCC of the control IC and the output voltage Vout are stabilized in a certain voltage range, and the switching power supply normally works.
The conventional switching power supply starting circuit described above has the following drawbacks: when the range of the input voltage Vin is wide, in order to ensure that a sufficiently large starting current can be provided for the control IC at the lowest input voltage, so that the switching power supply can be started normally, the resistance value of the resistor R1 cannot be too large. Because the resistor R1 is always connected to the input terminal, the power consumption P = (Vin-VCC) 2/R1 generated by the resistor R1, obviously, if the power consumption on the resistor R1 is very large when the switching power supply operates at high voltage input, the power conversion efficiency, heat dissipation and reliability will be affected, and the power efficiency will be reduced, and moreover, the resistor R1 must be a high-power resistor, so that the switching power supply has a large volume and high cost.
Disclosure of Invention
The invention aims to provide a field effect transistor charging type semiconductor starting device integrating a polysilicon resistor and a polysilicon diode with low loss and high efficiency and a manufacturing method thereof aiming at the defects in the background technology.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a rechargeable semiconductor starting device of a field effect transistor integrating a polycrystalline silicon resistor and a diode is characterized by comprising a field effect transistor, a polycrystalline silicon resistor 9 (resistor R1), a capacitor C1, a feedback control module and an electronic switch, wherein the field effect transistor comprises a high-concentration first conductive type doped semiconductor substrate 1, the semiconductor substrate is connected with a power supply input end of the starting device, a first conductive type lightly doped epitaxial layer 2 positioned on the substrate, and a cellular structure, a terminal structure and an isolation structure positioned in the first conductive type lightly doped epitaxial layer, the cellular structure is positioned in the center of the field effect transistor, the terminal structure is positioned at the edge of the field effect transistor, and the isolation structure is positioned between the cellular structure and the terminal structure;
wherein, the terminal structure includes: the field effect transistor comprises a doping region 3 of a second conductivity type, a heavily doped region 11 of the first conductivity type, a well region 4 of the second conductivity type, a heavily doped region 12 of the second conductivity type, a first oxide region 7, a spiral polycrystalline silicon resistor 9, a first polycrystalline silicon diode D1, a polycrystalline silicon resistor 9 and a cathode 15, wherein the doping region 3 of the second conductivity type is positioned in the lightly doped epitaxial layer of the first conductivity type, the heavily doped region 11 of the first conductivity type is positioned on one side, close to the edge, of the doping region 3 of the second conductivity type, the well region 4 of the second conductivity type is positioned on one side, close to the center, of the doping region 3 of the second conductivity type, the heavily doped region 12 of the second conductivity type is positioned in the well region 4 of the second conductivity type, the first oxide region 7 of the second conductivity type is positioned on the surface of the doping region 3 of the second conductivity type, the polycrystalline silicon resistor 9 is positioned on the first oxide region 7 and rotates outwards gradually around the center of the field effect transistor, the polycrystalline silicon diode D1 is connected with the first polycrystalline silicon diode D1 at one end, the anode 16 of the first polycrystalline silicon diode D1 is connected with the heavily doped region 11 of the first conductivity type;
the isolation structure comprises a plurality of second conduction type heavily doped regions 5 which are arranged at equal intervals, and an oxidation layer and a metal field plate which are positioned on the upper surfaces of the second conduction type heavily doped regions 5; as an isolation ring between the output of the device and ground;
the cellular structure includes: a well region 6 doped with the second conductivity type and close to one side of the center, a first conductivity type heavily doped region 13 and a second conductivity type heavily doped region 14 which are positioned in the well region 6 doped with the second conductivity type and serve as source ends of the field effect transistor, a second oxide layer region 17 on the surface of the epitaxial layer 2 lightly doped with the first conductivity type and positioned between the well region 6 doped with the second conductivity type and the second conductivity type heavily doped region 5, a second polysilicon diode D2 and a third polysilicon diode D3 which are positioned above the second oxide layer region, a thin oxide layer which is positioned above the well region 6 doped with the second conductivity type and a part of the epitaxial layer 2 lightly doped with the first conductivity type and serves as a gate oxide layer 8 of the field effect transistor, and a gate electrode 10 which is positioned above the gate oxide layer 8; the anodes 16 of the second polysilicon diode D2 and the third polysilicon diode D3 are both connected with the source end of the field effect transistor, the cathode 15 of the second polysilicon diode D2 is connected with one end, close to the center, of the polysilicon resistor 9 and the grid 10 of the field effect transistor, the cathode 15 of the third polysilicon diode D3 is connected with the grounded second conductivity type heavily doped region 12 in the terminal structure through a capacitor C1, and the capacitor C1 is used as an output power supply of the device;
the voltage output end of the capacitor C1 is connected with the input end of a feedback control module, the output end of the feedback control module is connected with the control end of an electronic switch S1, one end of the electronic switch S1 is connected with the grid 10 of the field effect, the other end of the electronic switch S1 is grounded, and the second conduction type heavily doped region 12 is connected with the capacitor C1 and the ground.
Further, the feedback control module collects and judges the output voltage Vout, and when the Vout is higher than the set voltage Vmax, the feedback control module outputs current to control the electronic switch S1 to be switched on, so that the grid electrode 10 of the field effect transistor is grounded, the field effect transistor is switched off, and charging is stopped; when Vout is lower than the set voltage Vmin, the feedback control module outputs current to control the electronic switch to be switched off, so that the grid 10 of the field effect transistor is at a high level, the field effect transistor is switched on, and charging is started.
Further, the doping concentration of the second conductivity type doped region 3 in the termination structure gradually decreases from the center of the device to the edge.
Compared with the prior art, the invention has the beneficial effects that:
1. the field effect tube charging type semiconductor starting device integrating the polysilicon resistor and the diode provided by the invention adopts the field effect tube to charge the capacitor through the polysilicon diode, and has small resistance and low power consumption when the field effect tube is switched on, so that larger charging current can be generated when the input voltage is smaller, the output voltage can quickly reach the voltage required by the minimum main circuit, and the polysilicon diode can ensure that the current on the capacitor cannot flow back to the ground when the field effect tube is switched off.
2. According to the field-effect tube charging type semiconductor starting device integrating the polysilicon resistor and the diode, the on and off of the field-effect tube are controlled through the grid electrode of the field-effect tube, and the power consumption and the heat productivity of the resistor can be reduced only by small driving current; and the resistor is connected to the input end of the starting circuit through the voltage-stabilizing polysilicon diode, so that the field effect transistor can be effectively prevented from being turned on by mistake due to the fluctuation of input voltage, and unnecessary power consumption is avoided. When the output voltage reaches a preset value, the feedback control module controls the electronic switch to be switched on by a bootstrap substrate bias method, so that the grid electrode of the field effect transistor is grounded, the field effect transistor is switched off, charging is stopped, and only small leakage current exists, thereby achieving the purposes of reducing loss and improving power supply efficiency. Meanwhile, as the field effect transistor works between the input voltage and the output voltage, the isolation structure can effectively realize the voltage isolation between the field effect transistor and the ground.
3. The field-effect tube charging type semiconductor starting device integrating the polysilicon resistor and the diode has a simple structure, and the resistor and the voltage-stabilizing diode for voltage division are manufactured by utilizing the spare area of the voltage-resisting area of the field-effect tube in a single tube or an integrated circuit, so that a large part of chip area can be saved, additional devices such as a capacitor and a diode are not needed, the integration is easy, and the occupied chip area is small; the method can be realized by utilizing the BCD process without additionally increasing process steps and generating additional production cost.
Drawings
Fig. 1 is a circuit diagram of a conventional switching power supply start-up circuit mentioned in the background art;
fig. 2 is a schematic structural diagram of a fet charging type semiconductor start-up device integrated with polysilicon resistors and diodes according to the present invention;
fig. 3 is a top view of a fet charging type semiconductor start-up device integrated with polysilicon resistors and diodes according to the present invention;
fig. 4 is an equivalent circuit diagram of a fet charging type semiconductor start-up device integrated with polysilicon resistors and diodes according to the present invention.
Detailed Description
The technical scheme of the invention is detailed below by combining the accompanying drawings and the embodiment.
As shown in fig. 2 and fig. 3, which are a schematic structural diagram and a top view of a fet rechargeable semiconductor start-up device integrated with polysilicon resistor and diode according to the present invention; the power input terminal, the power output terminal, the resistor R1, and the capacitor C1 in fig. 2 correspond to those in fig. 1, and therefore, the same reference numerals are used. According to the field effect transistor charging type semiconductor starting device integrating the polysilicon resistor and the diode, the input voltage Vin at the power input end of the device charges the capacitor C1, the two ends of the capacitor C1 are power output ends, and the output voltage Vout supplies power to a main circuit (not shown).
The field-effect tube charging type semiconductor starting device integrating the polysilicon resistor and the diode comprises a field-effect tube, a polysilicon resistor 9 (resistor R1), a capacitor C1, a feedback control module and an electronic switch, wherein the field-effect tube comprises an N-type high-concentration substrate 1 connected with a power input end Vin, an N-type lightly-doped epitaxial layer 2 positioned on the substrate, a cellular structure, a terminal structure and an isolation structure, the cellular structure is positioned in the center of the field-effect tube, the terminal structure is positioned at the edge of the field-effect tube, and the isolation structure is positioned between the cellular structure and the terminal structure;
wherein the terminal structure includes: the P-type variable doping region 3 is positioned in the N-type lightly doped epitaxial layer 2, the doping concentration of the region is gradually reduced from the center of the device to the edge direction, and can be used as a junction terminal region of the device, a first N-type heavily doped region 11 is positioned on one side, close to the edge, of the P-type variable doping region 3, a first P-type well region 4 is positioned on one side, close to the center, of the P-type variable doping region 3, a first P-type heavily doped region 12 is positioned in the first P-type well region 4, a first thick oxide layer region 7 is positioned on the surface of the P-type variable doping region 3, a spiral polycrystalline silicon resistor 9 is positioned on the first thick oxide layer region 7 and rotates outwards gradually around the center of a field effect tube, one end, close to the edge, of the polycrystalline silicon resistor 9 is connected with a first polycrystalline silicon diode D1, the polycrystalline silicon resistor 9 is connected with an anode 16 of the first polycrystalline silicon diode D1, and a cathode 15 of the first polycrystalline silicon diode D1 is connected with the first N-type heavily doped region 11;
the isolation structure comprises a plurality of second P-type heavily doped regions 5 which are arranged at equal intervals, and an oxidation layer and a metal field plate which are positioned on the upper surfaces of the second P-type heavily doped regions 5; as an isolation ring between the output of the device and ground;
the cellular structure includes: a second P-type well region 6 close to one side of the center, a second N-type heavily doped region 13 and a third P-type heavily doped region 14 which are positioned in the second P-type well region 6 and used as source ends of a field effect transistor, a second thick oxide layer region 17 positioned on the surface of the N-type lightly doped epitaxial layer 2 between the second P-type well region 6 and the second P-type heavily doped region 5, a second polysilicon diode D2 and a third polysilicon diode D3 which are positioned above the second oxide layer region, a thin oxide layer positioned above the second P-type well region 6 and a part of the N-type lightly doped epitaxial layer 2 and used as a gate oxide layer 8 of the field effect transistor, and a gate electrode 10 positioned above the gate oxide layer 8; the anodes 16 of the second polysilicon diode D2 and the third polysilicon diode D3 are both connected with the source end of the field effect transistor, the cathode 15 of the second polysilicon diode D2 is connected with one end, close to the center, of the polysilicon resistor 9 and the grid 10 of the field effect transistor, the cathode 15 of the third polysilicon diode D3 is connected with the first P-type heavily doped region 12 which is grounded in the terminal structure through a capacitor C1, and the capacitor C1 is used as an output power supply of the device;
the voltage output end Vout of the capacitor C1 is connected with the input end of a feedback control module, the output end of the feedback control module is connected with the control end of an electronic switch S1, one end of the electronic switch S1 is connected with the grid 10 of the field effect, the other end of the electronic switch S1 is grounded, and the second conductive type heavily doped region 12 is connected with the capacitor C1 and the ground.
Further, the feedback control module collects and judges the output voltage Vout, and when Vout is higher than the set voltage Vmax, the feedback control module outputs current to control the electronic switch S1 to be switched on, so that the grid 10 of the field effect transistor is grounded, the field effect transistor is switched off, and charging is stopped; when Vout is lower than the set voltage Vmin, the feedback control module outputs current to control the electronic switch to be switched off, so that the grid 10 of the field effect transistor is at a high level, the field effect transistor is switched on, and charging is started.
Fig. 4 is an equivalent circuit diagram of a fet charging type semiconductor start-up device integrated with polysilicon resistors and diodes according to the present invention, so that the structure of the semiconductor start-up device is simplified and clear.
As shown in fig. 2 and 4, the operating principle of the semiconductor start-up device of the present invention is as follows:
in an initial state, the electronic switch S1 is turned off, and when the input voltage Vin exceeds the breakdown voltage of the first polysilicon diode D1, the output current is reduced through the resistor R1 to the gate of the fet M1, so that the fet M1 is turned on, the input voltage Vin charges the capacitor C1 through the drain-source of the fet M1 and the third polysilicon diode D3, and the output voltage Vout gradually rises. When the output voltage Vout rises to the preset value V1, the feedback control module sends a signal to turn on the electronic switch S1, so that the gate of the field effect transistor M1 is grounded and turned off, thereby completing the start-up function, and at this time, the third polysilicon diode D3 can ensure that the charge on the capacitor C1 does not flow to the ground through the second polysilicon diode D2. When the semiconductor starting device needs to be restarted, namely the output voltage Vout is reduced to a set value, the feedback control module sends a signal to turn off the electronic switch S1, so that the gate of the field-effect transistor M1 is at a high level, the field-effect transistor M1 can be turned on again, and the capacitor C1 starts to be charged. Since the operating voltage of the fet M1 is between Vin and Vout, the isolation ring 5 in fig. 2 achieves voltage isolation between the fet and ground potential.
The manufacturing process of the semiconductor starting device mainly comprises the manufacturing of a field effect transistor M1, a polycrystalline silicon resistor 9 (resistor R1) and polycrystalline silicon diodes D1, D2 and D3, and comprises the following steps:
step 1, arranging an N-type lightly doped epitaxial layer on an N-type high-concentration substrate 1, wherein the resistivity of the N-type high-concentration substrate is 0.004 ohm cm, the resistivity of the N-type lightly doped epitaxial layer is 20 ohm cm, and the N-type lightly doped epitaxial layer 2 is used as a drain electrode drift region of a field effect tube;
step 2, injecting P-type impurities on the N-type lightly doped epitaxial layer, wherein the injection dosage is 1e13atom/cm 2 ；
step 4, forming an N-type JFET area by injecting phosphorus;
7, injecting P-type impurities and performing junction pushing activation to obtain P wells (4 and 6);
and 8, forming N + source and drain regions (11 and 13) by N-type impurity implantation with the implantation dose of 5e15atom/cm 2 (ii) a P + source/drain regions (12, 14) are formed by P-type impurity implantation at a dose of 1e15 atom/cm 2 Simultaneously, the anodes and cathodes (15, 16) of the first, second and third polysilicon diodes are formed.
In the above example, the two conductivity type dopings are interchanged, and the same holds true for this design.
The above embodiments are only preferred embodiments of the present invention, and are not intended to limit the technical solutions of the present invention, so long as the technical solutions can be realized on the basis of the above embodiments without creative efforts, which should be considered to fall within the protection scope of the patent of the present invention.
Claims (3)
1. A rechargeable semiconductor starting device of a field effect transistor integrating a polycrystalline silicon resistor and a diode is characterized by comprising a field effect transistor, a polycrystalline silicon resistor (9), a capacitor, a feedback control module and an electronic switch, wherein the field effect transistor comprises a first conductivity type doped semiconductor substrate (1), the semiconductor substrate is connected with a power supply input end, a first conductivity type lightly doped epitaxial layer (2) positioned on the substrate, and a cellular structure, a terminal structure and an isolation structure which are positioned in the first conductivity type lightly doped epitaxial layer;
wherein the terminal structure includes: the device comprises a doped region (3) of a second conductivity type, a heavily doped region (11) of the first conductivity type, a well region (4) of the second conductivity type, a heavily doped region (12) of the second conductivity type, a first oxide layer region (7) and a spiral polycrystalline silicon resistor (9), wherein the doped region (3) of the second conductivity type is positioned on one side, close to the edge, of the doped region (3) of the second conductivity type, the well region (4) of the second conductivity type is positioned on one side, close to the center, of the doped region (3) of the second conductivity type, the heavily doped region (12) of the second conductivity type is positioned in the well region (4) of the second conductivity type, the first oxide layer region (7) is positioned on the first oxide layer region (7), the polycrystalline silicon resistor (9) is connected with a first polycrystalline silicon diode at one end, close to the edge of the device, the polycrystalline silicon resistor (9) is connected with an anode (16) of the first polycrystalline silicon diode, and a cathode (15) of the first polycrystalline silicon diode is connected with the heavily doped region (11) of the first conductivity type;
the isolation structure comprises a plurality of second conduction type heavily doped regions (5) which are arranged at equal intervals, and an oxidation layer and a metal field plate which are positioned on the upper surfaces of the second conduction type heavily doped regions (5);
the cellular structure includes: a well region (6) doped with a second conduction type close to one side of the center, a first conduction type heavily doped region (13) and a second conduction type heavily doped region (14) which are positioned in the well region (6) doped with the second conduction type and used as source ends of a field effect transistor, a second oxidation layer region (17) on the surface of the epitaxial layer (2) lightly doped with the first conduction type and positioned between the well region (6) doped with the second conduction type and the second conduction type heavily doped region (5), a second polysilicon diode (D2) and a third polysilicon diode (D3) which are positioned above the second oxidation layer region, a gate oxide layer (8) which is positioned above the well region (6) doped with the second conduction type and the epitaxial layer (2) lightly doped with the first conduction type, and a gate electrode (10) which is positioned above the gate oxide layer (8); anodes (16) of the second polysilicon diode and the third polysilicon diode are both connected with the source end of the field effect transistor, a cathode (15) of the second polysilicon diode is connected with one end, close to the center, of the polysilicon resistor (9) and a grid (10) of the field effect transistor, and a cathode (15) of the third polysilicon diode is connected with a second conductive type heavily doped region (12) which is grounded in the terminal structure through a capacitor;
the voltage output end of the capacitor is connected with the input end of the feedback control module, the output end of the feedback control module is connected with the control end of the electronic switch, one end of the electronic switch is connected with the grid (10) of the field effect, the other end of the electronic switch is grounded, and the second conduction type heavily doped region (12) is connected with the capacitor and the ground.
2. The rechargeable semiconductor starting device of claim 1, wherein the feedback control module collects and determines the output voltage Vout, and when Vout is higher than the set voltage Vmax, the feedback control module outputs a current to control the electronic switch to be turned on, such that the gate of the fet is grounded, and the fet is turned off to stop charging; when Vout is lower than the set voltage Vmin, the feedback control module outputs current to control the electronic switch to be switched off, so that the grid of the field effect transistor is at a high level, the field effect transistor is switched on, and charging is started.
3. The integrated polysilicon resistor and diode fet rechargeable semiconductor start-up device as claimed in claim 1, wherein the doping concentration of the second conductivity type doped region in the termination structure decreases from the center of the device to the edge of the device.
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| CN206117499U (en) * | 2016-10-20 | 2017-04-19 | 广州金升阳科技有限公司 | Start circuit |
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| CN2686205Y (en) * | 2004-02-26 | 2005-03-16 | 广州金升阳科技有限公司 | Isolating self-oscillating antiviolent inverter capable of realizing soft starting |
| JP2006278544A (en) * | 2005-03-28 | 2006-10-12 | Sanyo Electric Co Ltd | Active element and its fabrication process |
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| CN104779303A (en) * | 2015-02-15 | 2015-07-15 | 电子科技大学 | Vertical constant-current diode and manufacturing method thereof |
| CN104767371A (en) * | 2015-04-20 | 2015-07-08 | 成都岷创科技有限公司 | Alternating-current-direct-current conversion starting circuit |
| CN206117499U (en) * | 2016-10-20 | 2017-04-19 | 广州金升阳科技有限公司 | Start circuit |
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