CN111244050B - Chip-level integrated microfluid heat dissipation module and preparation method thereof - Google Patents
Chip-level integrated microfluid heat dissipation module and preparation method thereof Download PDFInfo
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- 230000017525 heat dissipation Effects 0.000 title abstract description 60
- 238000002360 preparation method Methods 0.000 title abstract description 13
- 239000007788 liquid Substances 0.000 claims abstract description 133
- 238000001816 cooling Methods 0.000 claims abstract description 128
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 238000004806 packaging method and process Methods 0.000 claims abstract description 46
- 239000000110 cooling liquid Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims description 82
- 239000002184 metal Substances 0.000 claims description 82
- 238000005530 etching Methods 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 52
- 239000012212 insulator Substances 0.000 claims description 33
- 238000003466 welding Methods 0.000 claims description 33
- 230000008569 process Effects 0.000 claims description 31
- 238000007789 sealing Methods 0.000 claims description 31
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 239000004033 plastic Substances 0.000 claims description 11
- 238000001746 injection moulding Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims description 8
- 238000003825 pressing Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910016347 CuSn Inorganic materials 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 4
- 238000007517 polishing process Methods 0.000 claims description 4
- 239000000376 reactant Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000012809 cooling fluid Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 71
- 239000010408 film Substances 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 5
- 239000002826 coolant Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002153 concerted effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2924/1015—Shape
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- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
-
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
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- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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Abstract
The invention provides a chip-level integrated microfluid heat dissipation module and a preparation method thereof, wherein the chip-level integrated microfluid heat dissipation module comprises: the packaging body and the substrate layer are stacked up and down; the packaging body positioned on the upper layer is provided with a first semi-open three-dimensional cavity on the surface facing the substrate layer; the liquid cooling plate is accommodated in the first semi-open type three-dimensional cavity; the liquid cooling plate is provided with a second semi-open type three-dimensional chamber on one surface facing the packaging body; the heat source chip is accommodated in the second semi-open type three-dimensional cavity; the liquid cooling plate faces to one surface of the substrate layer and is provided with a first vertical through micro-channel and a second vertical through micro-channel; the substrate layer is provided with a third vertical through micro-channel which is respectively communicated with the first vertical through micro-channel and the second vertical through micro-channel to form a three-dimensional vertical structure micro-channel system, and cooling liquid flows in the three-dimensional vertical structure micro-channel system.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a chip-level integrated microfluid heat dissipation module and a preparation method thereof.
Background
With the rapid development of semiconductor technology, the transistor density is continuously increased, the chip performance is continuously improved, the chip power and the heat flux density are increasingly large, and the heat dissipation capacity of the chip becomes a key factor for restricting the further development of moore's law. The traditional heat dissipation mode is used for dissipating heat of a packaged chip through a heat sink in a liquid cooling or air cooling mode, heat conduction of a chip surface functional layer can reach a refrigerating medium only through a large amount of intermediate thermal resistances such as a chip substrate, a chip packaging body, heat conduction silicone grease and the heat sink, and a large amount of parasitic problems such as thermal mismatch are easily caused due to integration of various heterogeneous materials. Due to the existence of a large amount of interface thermal resistance, the heat dissipation capability of the traditional heat dissipation mode approaches the limit, and even if a heat dissipation structure with a high heat exchange area such as a micro-channel is used, the heat dissipation problem of high-heat-flux density chips such as a high-performance microprocessor, a communication radio frequency device and the like cannot be solved. With the progress and development of the silicon-based micro-nano processing technology, the processing of a silicon micro-channel heat dissipation structure with the size equivalent to that of a chip becomes practical. The heat dissipation mode of directly integrating the silicon-based micro-channel heat dissipation structure with the chip can further reduce the thermal resistance of the middle interface, and becomes an effective technical path for further improving the heat dissipation capability of the chip.
At present, three assembly schemes exist, one is that a cold plate is attached to the back surface of a packaging cover through a second layer of thermal interface, and the scheme has the advantages of easy realization and the defects of overlarge size and larger thermal resistance. The second is to directly manufacture the micro-channel on the back of the heat source chip, which has the least thermal resistance but great manufacturing difficulty. The third is to integrate a cold plate in the packaging cover, and the scheme is simple to realize and has small thermal resistance. For example, on the basis of integrating a cold plate in a packaging cover, a module with double-sided heat dissipation is manufactured, the lower layer adopts a mode of manufacturing a micro-channel in a silicon intermediate layer, the transmission of electric signals is carried out while heat dissipation is met, but the micro-channel integrated in the silicon intermediate layer has high technical risk and high cost and is easy to lose efficacy.
Disclosure of Invention
The invention aims to provide a chip-level integrated microfluid heat dissipation module and a preparation method thereof, so as to solve the problem of low reliability of the conventional chip heat dissipation module.
In order to solve the above technical problem, the present invention provides a chip-scale integrated microfluidic heat dissipation module, comprising:
the packaging body and the substrate layer are stacked up and down; the packaging body positioned on the upper layer is provided with a first semi-open three-dimensional cavity on the side facing the substrate layer;
the liquid cooling plate is accommodated in the first semi-open type three-dimensional cavity; the liquid cooling plate is provided with a second semi-open type three-dimensional chamber on one surface facing the packaging body;
the heat source chip is accommodated in the second semi-open type three-dimensional cavity;
the liquid cooling plate faces to one surface of the substrate layer and is provided with a first vertical through micro-channel and a second vertical through micro-channel;
the substrate layer is provided with a third vertical through micro-channel which is respectively communicated with the first vertical through micro-channel and the second vertical through micro-channel to form a three-dimensional vertical structure micro-channel system, and cooling liquid flows in the three-dimensional vertical structure micro-channel system.
Optionally, in the chip-scale integrated microfluidic heat dissipation module, the first vertical through micro channels are distributed on a side surface of the heat source chip, and the first vertical through micro channels extend to a position below a contact surface between the liquid cooling plate and the package body along a direction parallel to a side surface of the liquid cooling plate; and
the second vertical through micro-channel is distributed below the heat source chip and extends to the position below the contact surface of the liquid cooling plate and the heat source chip along the direction parallel to the side surface of the liquid cooling plate so as to form four side surfaces and a fin with the bottom surface surrounding the heat source chip.
Optionally, integrated microfluid heat dissipation module of chip level in, the liquid cold plate orientation the one side of packaging body has the insulator film, the insulator film separates heat source chip with the packaging body, the redistribution metal level has in the insulator film, the insulator film surface has the pad, the pad through redistribution metal level with the heat source chip is connected, the pad pass through the metal wire with the substrate layer is connected.
Optionally, in the integrated microfluid heat dissipation module of chip level, the liquid cooling plate orientation the one side of substrate layer has welding bump and metal seal ring, the welding bump distribute in first perpendicular run through the microchannel and/or the second is perpendicular run through between the microchannel, metal seal ring is arranged in the coolant liquid of sealed three-dimensional vertical structure microchannel system.
The invention also provides a preparation method of the chip-level integrated microfluid heat dissipation module, which comprises the following steps:
etching the first surface of the liquid cooling plate to form a second semi-open type three-dimensional chamber;
placing a heat source chip in the second semi-open type three-dimensional chamber;
sealing the second semi-open volume chamber;
etching the second surface of the liquid cooling plate to form a first vertical through micro-channel and a second vertical through micro-channel in sequence;
providing a substrate layer, and etching the substrate layer to form a third vertical through micro-channel;
after the third vertical through micro-channel is aligned with the first vertical through micro-channel and the second vertical through micro-channel, welding the substrate layer with the second surface of the liquid cooling plate, so that the third vertical through micro-channel is respectively communicated with the first vertical through micro-channel and the second vertical through micro-channel to form a three-dimensional vertical structure micro-channel system;
and packaging the substrate layer and the first surface of the liquid cooling plate to form the packaging body.
Optionally, in the method for manufacturing a chip-scale integrated microfluidic heat dissipation module, etching the first surface of the liquid cooling plate to form a second semi-open type three-dimensional chamber includes:
and etching the through silicon via on the first surface of the liquid cooling plate, introducing etching gas and side wall protection gas into the plasma etching cavity simultaneously in the etching process, and controlling the pressure of the etching cavity to change alternately between a high-pressure stage and a low-pressure stage until the etching is finished.
Optionally, in the method for manufacturing a chip-scale integrated microfluidic heat dissipation module, sealing the second semi-open type three-dimensional chamber includes:
filling an insulator film in a gap between the heat source chip and the second semi-open type three-dimensional cavity through a mould pressing glue injection molding process; the mould pressing glue injection molding process comprises the following steps: introducing specific chemical gas and leading chemicals into the reaction chamber, and depositing reactants on the first surface of the liquid cooling plate by using a chemical reaction to form an insulator film;
preparing a redistribution metal layer on the surface of the heat source chip by using a dry etching process or a wet etching process, filling an insulator film around the redistribution metal layer, and preparing a bonding pad on the surface of the insulator film by using the dry etching process or the wet etching process, wherein the bonding pad is made of CuNiPaAu;
and carrying out a temporary bonding process or a plastic package process on the surface of the insulator film to form a carrier plate, wherein the carrier plate is used for providing support for subsequent processes, turning the liquid cooling plate over and carrying out a mechanical polishing process on the second surface of the liquid cooling plate.
Optionally, in the method for manufacturing a chip-scale integrated microfluidic heat dissipation module, sequentially forming a first vertical through microchannel and a second vertical through microchannel includes:
manufacturing welding salient points and metal sealing rings on the second surface of the liquid cooling plate, wherein the welding salient points are distributed between the first vertical through micro-channel and/or the second vertical through micro-channel, the welding salient points are used for welding the liquid cooling plate and the substrate layer, the metal sealing rings are distributed on the edge of the liquid cooling plate, and the welding salient points and the metal sealing rings are made of CuSn or CuNiAu;
etching a second surface of the liquid cooling plate distributed on the side surface of the heat source chip until the second surface is above the contact surface of the liquid cooling plate and the packaging body, wherein the etching direction is parallel to the side surface of the liquid cooling plate;
and etching the second surface of the liquid cooling plate distributed on the bottom surface of the heat source chip until the second surface is above the contact surface of the liquid cooling plate and the heat source chip, wherein the etching direction is parallel to the side surface of the liquid cooling plate, and four side surfaces and a fin with the bottom surface surrounding the heat source chip are formed.
Optionally, in the preparation method of the chip-scale integrated microfluidic heat dissipation module, after the substrate layer is welded to the second surface of the liquid cooling plate, the metal sealing ring seals cooling liquid in the three-dimensional vertical structure microchannel system;
removing the carrier plate through de-bonding, performing a metal wire bonding process to enable the heat source chip and the substrate layer to realize circuit interconnection, packaging the substrate layer, and plastically packaging the heat source chip and the liquid cooling plate; or
It is right the substrate layer reaches the side of liquid-cooled board carries out the plastic envelope encapsulation of second time, with the carrier plate forms the packaging body jointly, and is right the packaging body carries out laser grooving, forms first metal wire casing and second metal wire casing, first metal wire casing extends to the pad, second metal wire casing extends to the substrate layer first metal wire casing with fill the silver thick liquid in the second metal wire casing copper line connection is arranged on the surface of packaging body first metal wire casing with second metal wire casing.
In the chip-level integrated microfluid heat dissipation module and the preparation method thereof provided by the invention, a first semi-open type three-dimensional cavity is formed on a substrate layer through a packaging body, a liquid cooling plate is placed in the first semi-open type three-dimensional cavity, the liquid cooling plate is embedded in the packaging body to form a second semi-open type three-dimensional cavity, a heat source chip is placed in the second semi-open type three-dimensional cavity, a third vertical through microchannel in the substrate layer is respectively communicated with a first vertical through microchannel and a second vertical through microchannel of the liquid cooling plate to form a three-dimensional vertical structure microchannel system, cooling liquid flows in the three-dimensional vertical structure microchannel system, the heat source chip is embedded in the liquid cooling plate, the liquid cooling plate dissipates heat from the bottom and the periphery of the heat source chip, five surfaces dissipate heat, the heat dissipation capacity of the heat source chip is improved, and the slit structure is directly integrated on the substrate layer, the third perpendicularly runs through the microchannel promptly, makes the technological process of microchannel system in a concerted effort, simple reliable reduce cost, in addition, the inlet outlet of coolant liquid all is located the bottom of substrate layer, need not to make great metal feed liquor module in the surface of liquid cooling board, not only makes the volume of whole heat dissipation module reduce greatly, and finally, heat source chip and liquid cooling board are in the injection moulding material of packaging body, and the plastic envelope layer of packaging body protects heat source chip and liquid cooling board respectively, has improved whole cooling system's reliability.
Drawings
FIG. 1 is a schematic diagram of a chip-scale integrated microfluidic heat-dissipating module according to an embodiment of the present invention;
FIGS. 2 to 10 are schematic diagrams illustrating a method for manufacturing a chip-scale integrated microfluidic heat dissipation module according to an embodiment of the present invention;
shown in the figure: 10-liquid cooling plate; 11-a first semi-open volumetric chamber; 12-a first vertical through-micro-channel; 13-a second vertical through-micro-channel; 20-a heat source chip; 21-a second semi-open volumetric chamber; 30-a substrate layer; 31-a third vertical through-micro-channel; 40-a package body; 41-metal wire; 42-a first metal wire chase; 43-a second metal wire chase; 44-copper wire; 50-an insulator thin film; 51-redistribution of the metal layer; 52-a pad; 53-a carrier plate; 60-welding salient points and metal sealing rings.
Detailed Description
The chip-scale integrated microfluidic heat dissipation module and the manufacturing method thereof according to the present invention will be described in detail with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
The core idea of the invention is to provide a chip-level integrated microfluid heat dissipation module and a preparation method thereof, so as to solve the problem of low reliability of the existing chip heat dissipation module.
In order to realize the idea, the invention provides a chip-level integrated microfluid heat dissipation module and a preparation method thereof, wherein the chip-level integrated microfluid heat dissipation module comprises: the packaging body and the substrate layer are stacked up and down; the packaging body positioned on the upper layer is provided with a first semi-open three-dimensional cavity on the side facing the substrate layer; the liquid cooling plate is accommodated in the first semi-open type three-dimensional cavity; the liquid cooling plate is provided with a second semi-open type three-dimensional chamber on one surface facing the packaging body; the heat source chip is accommodated in the second semi-open type three-dimensional cavity; the liquid cooling plate faces to one surface of the substrate layer and is provided with a first vertical through micro-channel and a second vertical through micro-channel; the substrate layer is provided with a third vertical through micro-channel which is respectively communicated with the first vertical through micro-channel and the second vertical through micro-channel to form a three-dimensional vertical structure micro-channel system, and cooling liquid flows in the three-dimensional vertical structure micro-channel system.
< example one >
The present embodiment provides a chip-scale integrated microfluidic heat dissipation module, as shown in fig. 1, the chip-scale integrated microfluidic heat dissipation module includes: a package body 40 and a substrate layer 30 stacked up and down; wherein the packaging body 40 positioned at the upper layer is provided with a first semi-open three-dimensional chamber 11 at the side facing the substrate layer 30; a liquid cooling plate 10 accommodated in the first semi-open type stereo chamber 11; wherein the liquid cooling plate 10 has a second semi-open three-dimensional chamber 21 on a side facing the package body 40; a heat source chip 20 accommodated in the second semi-open type three-dimensional chamber 21; the liquid cooling plate 10 faces the substrate layer 30 and is provided with a first vertical through micro-channel 12 and a second vertical through micro-channel 13; the substrate layer 30 is provided with a third vertical through micro-channel 31, and the third vertical through micro-channel 31 is respectively communicated with the first vertical through micro-channel 12 and the second vertical through micro-channel 13 to form a three-dimensional vertical micro-channel system. The second vertical through-micro channel 13 may include a plurality of openings communicating with the outside as an inlet and an outlet of the cooling liquid, and the cooling liquid enters from the inlet of the second vertical through-micro channel 13 and flows in the three-dimensional vertical structured micro channel system and then exits from the outlet of the second vertical through-micro channel 13.
In other embodiments of the present invention, the liquid cooling plate 10 is not limited to silicon material, and may include a variety of semiconductor materials, such as silicon, germanium, gallium arsenide, indium phosphide, etc., and alternatively, may be made of electrically non-conductive material, such as glass, plastic, or sapphire wafer.
In one embodiment of the present invention, in the chip-scale integrated microfluidic heat dissipation module, the first vertical through micro-channels 12 are distributed on the side of the heat source chip 20, and the first vertical through micro-channels 12 extend below the contact surface of the liquid cooling plate 10 and the package body 40 along the direction parallel to the side surface of the liquid cooling plate 10; and the second vertical through micro channels 13 are distributed below the heat source chip 20, and the second vertical through micro channels 13 extend to below the contact surface of the liquid cooling plate 10 and the heat source chip 20 along the direction parallel to the side surface of the liquid cooling plate 10, so as to form four side surfaces and a fin whose bottom surface surrounds the heat source chip 20.
In an embodiment of the invention, in the chip-scale integrated microfluidic heat dissipation module, a side of the liquid cooling plate 10 facing the package 40 has an insulator film 50, the insulator film 50 separates the heat source chip 20 from the package 40, the insulator film 50 has a redistribution metal layer 51 therein, a surface of the insulator film 50 has a pad 52, the pad 52 is connected to the heat source chip 20 through the redistribution metal layer 51, and the pad 52 is connected to the substrate layer 30 through a metal wire 41. In the chip-scale integrated microfluidic heat dissipation module, one surface of the liquid-cooled plate 10 facing the substrate layer 30 has soldering bumps and metal sealing rings 60, the soldering bumps are distributed between the first vertical through micro-channel 12 and/or the second vertical through micro-channel 13, and the metal sealing rings are used for sealing cooling liquid in a three-dimensional vertical structure micro-channel system.
In summary, the above embodiments describe the different configurations of the integrated microfluidic heat dissipation module at the chip level in detail, and it goes without saying that the present invention includes but is not limited to the configurations listed in the above embodiments, and any modifications based on the configurations provided in the above embodiments are within the scope of the present invention. One skilled in the art can take the contents of the above embodiments to take a counter-measure.
< example two >
The embodiment also provides a method for manufacturing a chip-scale integrated microfluidic heat dissipation module, as shown in fig. 2 to 10, the method for manufacturing a chip-scale integrated microfluidic heat dissipation module includes: etching the first surface of the liquid cooling plate 10 to form a second semi-open type three-dimensional chamber 21; placing a heat source chip 20 in the second semi-open stereo chamber 21; sealing the second semi-open stereo chamber 21; etching the second surface of the liquid cooling plate 10 to form a first vertical through micro-channel 12 and a second vertical through micro-channel 13 in sequence; providing a substrate layer 30, and etching the substrate layer 30 to form a third vertical through micro-channel 31; after aligning the third vertical through micro channel 31 with the first vertical through micro channel 12 and the second vertical through micro channel 13, welding the substrate layer 30 with the second surface of the liquid cooling plate 10, so that the third vertical through micro channel 31 is respectively communicated with the first vertical through micro channel 12 and the second vertical through micro channel 13 to form a three-dimensional vertical structure micro channel system; and encapsulating the substrate layer 30 and the first surface of the liquid cooling plate 10 to form the encapsulation body 40.
Specifically, in the method for manufacturing the chip-scale integrated microfluidic heat dissipation module, etching the first surface of the liquid cooling plate 10 to form the second semi-open type three-dimensional cavity 21 includes: and etching the through silicon via on the first surface of the liquid cooling plate 10, introducing etching gas and side wall protection gas into the plasma etching cavity simultaneously in the etching process, and controlling the pressure of the etching cavity to change alternately between a high-pressure stage and a low-pressure stage until the etching is finished.
Further, in the method for manufacturing a chip-scale integrated microfluidic heat dissipation module, the step of sealing the second semi-open type three-dimensional chamber 21 includes: as shown in fig. 3, filling an insulator film 50 into a gap between the heat source chip 20 and the second semi-open type three-dimensional cavity 21 by a mold pressing and glue injection molding process; the mould pressing glue injection molding process comprises the following steps: introducing specific chemical gas and leading chemicals into the reaction chamber, and depositing reactants on the first surface of the liquid cooling plate 10 by using a chemical reaction to form an insulator film 50; preparing a redistribution metal layer 51 on the surface of the heat source chip 20 by using a dry or wet etching process, filling an insulator film 50 around the redistribution metal layer 51, and preparing a bonding pad 52 on the surface of the insulator film 50 by using a dry or wet etching process as shown in fig. 4, wherein the bonding pad 52 is made of CuNiPaAu; as shown in fig. 5, a carrier plate 53 is formed on the surface of the insulator film 50 by a temporary bonding process, in order to bond the pad 52 side of the chip-scale integrated microfluidic heat dissipation module to the carrier plate 53 by the temporary bonding process, the carrier plate 53 is used to provide support for subsequent processing, the liquid-cooled plate 10 is turned over, and the second surface of the liquid-cooled plate 10 is subjected to a mechanical polishing process.
As shown in fig. 6, in the method for manufacturing a chip-scale integrated microfluidic heat dissipation module, sequentially forming a first vertical through micro-channel 12 and a second vertical through micro-channel 13 includes: manufacturing welding salient points and metal sealing rings 60 on the second surface of the liquid cooling plate 10, wherein the welding salient points are distributed between the first vertical through micro-channel 12 and/or the second vertical through micro-channel 13, the welding salient points are used for welding the liquid cooling plate 10 and the substrate layer 30, the metal sealing rings are distributed on the edge of the liquid cooling plate 10, and the welding salient points and the metal sealing rings 60 are made of CuSn or CuNiAu; etching a second surface of the liquid cooling plate 10 distributed on the side surface of the heat source chip 20 until the second surface is above the contact surface of the liquid cooling plate 10 and the packaging body 40, wherein the etching direction is parallel to the side surface of the liquid cooling plate 10; and etching the second surface of the liquid cooling plate 10 distributed on the bottom surface of the heat source chip 20 until the contact surface between the liquid cooling plate 10 and the heat source chip 20 is above, wherein the etching direction is parallel to the side surface of the liquid cooling plate 10, and four side surfaces and a fin with the bottom surface surrounding the heat source chip 20 are formed.
As shown in fig. 7, after aligning the third vertical through micro channel 31 with the first vertical through micro channel 12 and the second vertical through micro channel 13, welding the substrate layer 30 and the second surface of the liquid cooling plate 10 by using welding bumps, so that the third vertical through micro channel 31 is respectively communicated with the first vertical through micro channel 12 and the second vertical through micro channel 13 to form a three-dimensional vertical structure micro channel system; in the preparation method of the chip-scale integrated microfluidic heat dissipation module, after the substrate layer 30 is welded with the second surface of the liquid cooling plate 10, the metal sealing ring seals cooling liquid in a three-dimensional vertical structure micro channel system; as shown in fig. 8, by de-bonding, removing the carrier plate 53, and performing a metal wire 41 bonding process, so as to achieve circuit interconnection between the heat source chip 20 and the substrate layer 30, package the substrate layer 30, and plastically package the heat source chip 20 and the liquid cooling plate 10; finally, the package body 40 is formed, and the liquid cooling plate 10 is accommodated in the first semi-open three-dimensional chamber 11, as shown in fig. 8.
< example three >
The embodiment also provides a method for manufacturing a chip-scale integrated microfluidic heat dissipation module, as shown in fig. 2 to 10, the method for manufacturing a chip-scale integrated microfluidic heat dissipation module includes: etching the first surface of the liquid cooling plate 10 to form a second semi-open type three-dimensional chamber 21; placing a heat source chip 20 in the second semi-open stereo chamber 21; sealing the second semi-open stereo chamber 21; etching the second surface of the liquid cooling plate 10 to form a first vertical through micro-channel 12 and a second vertical through micro-channel 13 in sequence; providing a substrate layer 30, and etching the substrate layer 30 to form a third vertical through micro-channel 31; after aligning the third vertical through micro channel 31 with the first vertical through micro channel 12 and the second vertical through micro channel 13, welding the substrate layer 30 with the second surface of the liquid cooling plate 10, so that the third vertical through micro channel 31 is respectively communicated with the first vertical through micro channel 12 and the second vertical through micro channel 13 to form a three-dimensional vertical structure micro channel system; and encapsulating the substrate layer 30 and the first surface of the liquid cooling plate 10 to form the encapsulation body 40.
Specifically, in the method for manufacturing the chip-scale integrated microfluidic heat dissipation module, etching the first surface of the liquid cooling plate 10 to form the second semi-open type three-dimensional cavity 21 includes: and etching the through silicon via on the first surface of the liquid cooling plate 10, introducing etching gas and side wall protection gas into the plasma etching cavity simultaneously in the etching process, and controlling the pressure of the etching cavity to change alternately between a high-pressure stage and a low-pressure stage until the etching is finished.
Further, in the method for manufacturing a chip-scale integrated microfluidic heat dissipation module, the step of sealing the second semi-open type three-dimensional chamber 21 includes: as shown in fig. 3, filling an insulator film 50 into a gap between the heat source chip 20 and the second semi-open type three-dimensional cavity 21 by a mold pressing and glue injection molding process; the mould pressing glue injection molding process comprises the following steps: introducing specific chemical gas and leading chemicals into the reaction chamber, and depositing reactants on the first surface of the liquid cooling plate 10 by using a chemical reaction to form an insulator film 50; preparing a redistribution metal layer 51 on the surface of the heat source chip 20 by using a dry or wet etching process, filling an insulator film 50 around the redistribution metal layer 51, and preparing a bonding pad 52 on the surface of the insulator film 50 by using a dry or wet etching process as shown in fig. 4, wherein the bonding pad 52 is made of CuNiPaAu; as shown in fig. 5, a plastic package process is performed on the surface of the insulator thin film 50 to form a carrier plate 53, the material of the carrier plate is the same as that of the plastic package material of the second plastic package, the liquid-cooled plate 10 is turned over, and a mechanical polishing process is performed on the second surface of the liquid-cooled plate 10.
As shown in fig. 6, in the method for manufacturing a chip-scale integrated microfluidic heat dissipation module, sequentially forming a first vertical through micro-channel 12 and a second vertical through micro-channel 13 includes: manufacturing welding salient points and metal sealing rings 60 on the second surface of the liquid cooling plate 10, wherein the welding salient points are distributed between the first vertical through micro-channel 12 and/or the second vertical through micro-channel 13, the welding salient points are used for welding the liquid cooling plate 10 and the substrate layer 30, the metal sealing rings are distributed on the edge of the liquid cooling plate 10, and the welding salient points and the metal sealing rings 60 are made of CuSn or CuNiAu; etching a second surface of the liquid cooling plate 10 distributed on the side surface of the heat source chip 20 until the second surface is above the contact surface of the liquid cooling plate 10 and the packaging body 40, wherein the etching direction is parallel to the side surface of the liquid cooling plate 10; and etching the second surface of the liquid cooling plate 10 distributed on the bottom surface of the heat source chip 20 until the contact surface between the liquid cooling plate 10 and the heat source chip 20 is above, wherein the etching direction is parallel to the side surface of the liquid cooling plate 10, and four side surfaces and a fin with the bottom surface surrounding the heat source chip 20 are formed.
As shown in fig. 7, after aligning the third vertical through micro channel 31 with the first vertical through micro channel 12 and the second vertical through micro channel 13, welding the substrate layer 30 and the second surface of the liquid cooling plate 10 by using welding bumps, so that the third vertical through micro channel 31 is respectively communicated with the first vertical through micro channel 12 and the second vertical through micro channel 13 to form a three-dimensional vertical structure micro channel system; in the preparation method of the chip-scale integrated microfluidic heat dissipation module, after the substrate layer 30 is welded with the second surface of the liquid cooling plate 10, the metal sealing ring seals cooling liquid in a three-dimensional vertical structure micro channel system; as shown in fig. 9, the substrate layer 30 and the side surface of the liquid-cooled plate 10 are subjected to a second plastic package, and together with the carrier plate 53, a package body 40 is formed.
As shown in fig. 10, laser grooving is performed on the package 40 to form a first metal line groove 42 and a second metal line groove 43, the first metal line groove 42 extends to the pad 52, the second metal line groove 43 extends to the substrate layer 30, silver paste is filled in the first metal line groove 42 and the second metal line groove 43, and a copper line 44 is arranged on the surface of the package 40 to connect the first metal line groove 42 and the second metal line groove 43.
In the chip-scale integrated microfluid heat dissipation module and the preparation method thereof provided by the invention, a first semi-open type three-dimensional chamber 11 is formed on a substrate layer 30 by buckling a packaging body 40, a liquid cooling plate 10 is placed in the first semi-open type three-dimensional chamber 11, the liquid cooling plate 10 is embedded in the packaging body 40 to form a second semi-open type three-dimensional chamber 21, a heat source chip 20 is placed in the second semi-open type three-dimensional chamber 21, a third vertical through microchannel 31 in the substrate layer 30 is respectively communicated with a first vertical through microchannel 12 and a second vertical through microchannel 13 of the liquid cooling plate 10 to form a three-dimensional vertical structure microchannel system, cooling liquid flows in the three-dimensional vertical structure microchannel system, heat dissipation of the bottom and the periphery of the heat source chip 20 by utilizing the heat source chip 20 to be embedded in the liquid cooling plate 10 is realized, five-sided heat dissipation is realized by the liquid cooling plate 10, and the heat dissipation capacity of the heat source chip 20 is improved, and realized directly integrating the slit structure on the substrate layer 30, namely the third runs through the microchannel 31 perpendicularly, make the technological process of the microchannel system in one go, simple and reliable reduce cost, in addition, the inlet outlet of the coolant is located the bottom of the substrate layer 30, do not need to make the relatively large metal liquid inlet module on the surface of the liquid cooling plate 10, not only make the volume of the whole heat-dissipating module reduce greatly, finally, heat source chip 20 and liquid cooling plate 10 are in the injection molding material of the encapsulated body 40, the plastic envelope layer of the encapsulated body 40 protects heat source chip 20 and liquid cooling plate 10 respectively, have improved the reliability of the whole heat-dissipating system.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. For the system disclosed by the embodiment, the description is relatively simple because the system corresponds to the method disclosed by the embodiment, and the relevant points can be referred to the method part for description.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (7)
1. A chip-scale integrated microfluidic heat-dissipating module, comprising:
the packaging body and the substrate layer are stacked up and down; the packaging body positioned on the upper layer is provided with a first semi-open three-dimensional cavity on the side facing the substrate layer;
the liquid cooling plate is accommodated in the first semi-open type three-dimensional cavity; the liquid cooling plate is provided with a second semi-open type three-dimensional chamber on one surface facing the packaging body;
the heat source chip is accommodated in the second semi-open type three-dimensional cavity;
the liquid cooling plate faces to one surface of the substrate layer and is provided with a first vertical through micro-channel and a second vertical through micro-channel;
the substrate layer is provided with a third vertical through micro-channel which is respectively communicated with the first vertical through micro-channel and the second vertical through micro-channel to form a three-dimensional vertical structure micro-channel system, and cooling liquid flows in the three-dimensional vertical structure micro-channel system;
the first vertical through micro-channel and the second vertical through micro-channel form four side surfaces and a fin with the bottom surface surrounding the heat source chip;
the three-dimensional vertical structure micro flow channel system comprises:
the first vertical through micro-channel is distributed on the side face of the heat source chip and extends to the position below the contact surface of the liquid cooling plate and the packaging body along the direction parallel to the side surface of the liquid cooling plate; and
the second vertical through micro-channels are distributed below the heat source chip and extend to the position below the contact surface of the liquid cooling plate and the heat source chip along the direction parallel to the side surface of the liquid cooling plate so as to form four side surfaces and a fin with the bottom surface surrounding the heat source chip;
one surface of the liquid cooling plate facing the substrate layer is provided with welding salient points and a metal sealing ring, the welding salient points are distributed between the first vertical through micro-channel and/or the second vertical through micro-channel, and the metal sealing ring is used for sealing cooling liquid in a three-dimensional vertical structure micro-channel system;
performing a metal wire bonding process to electrically interconnect the heat source chip and the substrate layer, or
It is right the packaging body carries out laser grooving, forms first metal wire casing and second metal wire casing, first metal wire casing extend to with the pad that the heat source chip is connected, second metal wire casing extends to the substrate layer first metal wire casing with fill the silver thick liquid in the second metal wire casing the copper connection is arranged on the surface of packaging body first metal wire casing with second metal wire casing.
2. The chip scale integrated microfluidic thermal module according to claim 1, wherein the side of the liquid cooling plate facing the package body has an insulator film, the insulator film separates the heat source chip from the package body, the insulator film has a redistribution metal layer therein, the surface of the insulator film has a pad, the pad is connected to the heat source chip through the redistribution metal layer, and the pad is connected to the substrate layer through a metal line.
3. The method of claim 1, wherein the method of fabricating a chip-scale integrated microfluidic heat-dissipating module comprises:
etching the first surface of the liquid cooling plate to form a second semi-open type three-dimensional chamber;
placing a heat source chip in the second semi-open type three-dimensional chamber;
sealing the second semi-open volume chamber;
etching the second surface of the liquid cooling plate, and sequentially forming a first vertical through micro-channel and a second vertical through micro-channel to form four side surfaces and a fin with the bottom surface surrounding the heat source chip;
providing a substrate layer, and etching the substrate layer to form a third vertical through micro-channel;
after aligning a third vertical through micro-channel with the first vertical through micro-channel and the second vertical through micro-channel, welding the substrate layer with the second surface of the liquid cooling plate, so that the third vertical through micro-channel is respectively communicated with the first vertical through micro-channel and the second vertical through micro-channel to form a three-dimensional vertical structure micro-channel system;
and packaging the substrate layer and the first surface of the liquid cooling plate to form a packaging body.
4. The method of claim 3, wherein etching the first side of the liquid-cooled plate to form a second semi-open volumetric chamber comprises:
and etching the through silicon via on the first surface of the liquid cooling plate, introducing etching gas and side wall protection gas into the plasma etching cavity simultaneously in the etching process, and controlling the pressure of the etching cavity to change alternately between a high-pressure stage and a low-pressure stage until the etching is finished.
5. The method of preparing a chip-scale integrated microfluidic thermal module of claim 3, wherein sealing the second semi-open volumetric chamber comprises:
filling an insulator film in a gap between the heat source chip and the second semi-open type three-dimensional cavity through a mould pressing glue injection molding process; the mould pressing glue injection molding process comprises the following steps: introducing specific chemical gas and leading chemicals into the reaction chamber, and depositing reactants on the first surface of the liquid cooling plate by using a chemical reaction to form an insulator film;
preparing a redistribution metal layer on the surface of the heat source chip by using a dry etching process or a wet etching process, filling an insulator film around the redistribution metal layer, and preparing a bonding pad on the surface of the insulator film by using the dry etching process or the wet etching process, wherein the bonding pad is made of CuNiPaAu;
and carrying out a temporary bonding process or a plastic package process on the surface of the insulator film to form a carrier plate, wherein the carrier plate is used for providing support for subsequent processes, turning the liquid cooling plate over and carrying out a mechanical polishing process on the second surface of the liquid cooling plate.
6. The method of claim 5, wherein sequentially forming a first vertical through-microchannel and a second vertical through-microchannel comprises:
manufacturing welding salient points and metal sealing rings on the second surface of the liquid cooling plate, wherein the welding salient points are distributed between the first vertical through micro-channel and/or the second vertical through micro-channel, the welding salient points are used for welding the liquid cooling plate and the substrate layer, the metal sealing rings are distributed on the edge of the liquid cooling plate, and the welding salient points and the metal sealing rings are made of CuSn or CuNiAu;
etching a second surface of the liquid cooling plate distributed on the side surface of the heat source chip until the second surface is above the contact surface of the liquid cooling plate and the packaging body, wherein the etching direction is parallel to the side surface of the liquid cooling plate;
and etching the second surface of the liquid cooling plate distributed on the bottom surface of the heat source chip until the second surface is above the contact surface of the liquid cooling plate and the heat source chip, wherein the etching direction is parallel to the side surface of the liquid cooling plate, and four side surfaces and a fin with the bottom surface surrounding the heat source chip are formed.
7. The method of claim 6, wherein the metal sealing ring seals the cooling fluid in the three-dimensional vertical micro fluidic channel system after the substrate layer is soldered to the second surface of the liquid-cooled plate;
removing the carrier plate through de-bonding, performing a metal wire bonding process to enable the heat source chip and the substrate layer to realize circuit interconnection, packaging the substrate layer, and plastically packaging the heat source chip and the liquid cooling plate; or
It is right the substrate layer reaches the side of liquid-cooled board carries out the plastic envelope encapsulation of second time, with the carrier plate forms the packaging body jointly, and is right the packaging body carries out laser grooving, forms first metal wire casing and second metal wire casing, first metal wire casing extends to the pad, second metal wire casing extends to the substrate layer first metal wire casing with fill the silver thick liquid in the second metal wire casing copper line connection is arranged on the surface of packaging body first metal wire casing with second metal wire casing.
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| CN112908860A (en) * | 2021-01-18 | 2021-06-04 | 上海先方半导体有限公司 | High bandwidth memory structure and manufacturing method thereof |
| CN112928083B (en) * | 2021-02-05 | 2022-10-28 | 北京大学 | Heat dissipation device for grid region of power device and manufacturing method |
| CN113023663B (en) * | 2021-02-20 | 2023-08-29 | 北京航天控制仪器研究所 | All-silicon MEMS micro-channel radiator and processing method thereof |
| CN113299618B (en) * | 2021-04-29 | 2023-07-14 | 中国电子科技集团公司第二十九研究所 | Three-dimensional integrated high-efficiency heat dissipation packaging structure and preparation method thereof |
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