CN111180544B - Passivated contact crystalline silicon solar cell and manufacturing method thereof - Google Patents
Passivated contact crystalline silicon solar cell and manufacturing method thereof Download PDFInfo
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- CN111180544B CN111180544B CN202010009797.7A CN202010009797A CN111180544B CN 111180544 B CN111180544 B CN 111180544B CN 202010009797 A CN202010009797 A CN 202010009797A CN 111180544 B CN111180544 B CN 111180544B
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 82
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 82
- 239000010703 silicon Substances 0.000 claims abstract description 82
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 58
- 238000009792 diffusion process Methods 0.000 claims abstract description 51
- 229920005591 polysilicon Polymers 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 30
- 238000002161 passivation Methods 0.000 claims abstract description 26
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000011521 glass Substances 0.000 claims abstract description 18
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000002253 acid Substances 0.000 claims abstract description 15
- 239000011259 mixed solution Substances 0.000 claims abstract description 13
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 8
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 3
- 239000000654 additive Substances 0.000 abstract description 13
- 230000000996 additive effect Effects 0.000 description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- KHDSWONFYIAAPE-UHFFFAOYSA-N silicon sulfide Chemical compound S=[Si]=S KHDSWONFYIAAPE-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The application discloses a method for manufacturing a passivated contact crystalline silicon solar cell, which comprises the following steps: forming a diffusion layer on the front side of the silicon wafer; respectively forming an oxide layer on the back surface of the silicon wafer and the surface of the diffusion layer, which is far away from the silicon wafer, and forming a polysilicon layer on the surface of the oxide layer, which is far away from the silicon wafer; diffusing the polysilicon layer on the back to form a doped polysilicon layer; removing the oxide layer and the polysilicon layer on the front surface by using an acid mixed solution, wherein the acid mixed solution comprises hydrofluoric acid, nitric acid and sulfuric acid; removing the doped glass layer generated during the formation of the diffusion layer and the formation of the doped polysilicon layer; forming a first passivation layer on the surface of the diffusion layer, which is far away from the silicon wafer; forming a second passivation layer on the surface of the doped polycrystalline silicon layer, which is far away from the silicon wafer; and forming a first electrode on the surface of the first passivation layer, which is far away from the diffusion layer, and forming a second electrode on the surface of the second passivation layer, which is far away from the doped polycrystalline silicon layer. The method has simple process, does not need additives, and improves the efficiency and yield of the battery. The present application also provides a battery having the above advantages.
Description
Technical Field
The application relates to the technical field of solar cells, in particular to a passivated contact crystalline silicon solar cell and a manufacturing method thereof.
Background
With the development of the photovoltaic industry, the requirements of enterprises and customers on solar cells are higher and higher, and the aim of improving the efficiency of the solar cells is continuously pursued. The passivation contact structure is composed of a tunneling oxide layer and a doped polycrystalline silicon layer, the passivation contact solar cell with the structure can obviously reduce the composition of a metal contact area, has good contact performance, and can greatly improve the efficiency of the solar cell.
In the manufacturing process of the passivated contact solar cell, the step of removing the winding plating is a very important step, and the appearance and the yield of the cell are seriously influenced by the unclean or over-etching of the winding plating. In the prior art, when performing the decoiling, the decoiling is generally performed by using an alkaline solution added with an additive, wherein the additive is an organic surfactant or a silicate substance. Firstly, removing front PSG (silicon sulfide) of a silicon wafer subjected to phosphorus diffusion by using a chained single-sided HF (hydrogen fluoride) etching device; and then the battery enters a groove type device for alkali decoating, and the PSG on the back of the battery needs to be protected by using an additive in the process. The process is complicated, the cost is increased due to the use of the additive, certain pressure is caused to the subsequent pipeline cleaning, and the efficiency and yield of the battery are seriously influenced due to the unclean cleaning of the additive.
Therefore, how to solve the above technical problems should be a great concern to those skilled in the art.
Disclosure of Invention
The application aims to provide a passivated contact crystalline silicon solar cell and a manufacturing method thereof, so that the process flow of the solar cell is simplified, the manufacturing cost is reduced, and meanwhile, the efficiency and the yield of the cell are improved.
In order to solve the technical problem, the application provides a method for manufacturing a passivated contact crystalline silicon solar cell, which comprises the following steps:
forming a diffusion layer on the front side of the silicon wafer;
respectively forming an oxide layer on the back surface of the silicon wafer and the surface of the diffusion layer, which is far away from the silicon wafer, and forming a polysilicon layer on the surface of the oxide layer, which is far away from the silicon wafer;
diffusing the polysilicon layer on the back surface to form a doped polysilicon layer;
removing the oxide layer and the polysilicon layer on the front surface by using an acid mixed solution, wherein the acid mixed solution comprises hydrofluoric acid, nitric acid and sulfuric acid;
removing the doped glass layer generated during the formation of the diffusion layer and the formation of the doped polysilicon layer;
forming a first passivation layer on the surface of the diffusion layer, which is far away from the silicon wafer;
forming a second passivation layer on the surface of the doped polycrystalline silicon layer, which is far away from the silicon wafer;
and forming a first electrode on the surface of the first passivation layer, which is far away from the diffusion layer, and forming a second electrode on the surface of the second passivation layer, which is far away from the doped polycrystalline silicon layer.
Optionally, the volume ratio of the hydrofluoric acid to the nitric acid to the sulfuric acid in the acid mixed solution is 1:5:5 to 1:25:25, inclusive.
Optionally, after removing the doped glass layer generated when the diffusion layer is formed and when the doped polysilicon layer is formed, the method further includes:
and carrying out RCA cleaning on the silicon wafer with the doped glass layer removed.
Optionally, before forming the diffusion layer on the front side of the silicon wafer, the method further includes:
and texturing the silicon wafer.
Optionally, the forming an oxide layer on the back surface of the silicon wafer and the surface of the diffusion layer away from the silicon wafer includes:
and respectively forming oxide layers on the back surface of the silicon wafer and the surface of the diffusion layer deviating from the silicon wafer by adopting a thermal oxidation method.
Optionally, the forming a polysilicon layer on the surface of the oxide layer away from the silicon wafer includes:
and forming a polycrystalline silicon layer on the surface of the oxide layer deviating from the silicon wafer by adopting a low-pressure chemical vapor deposition method.
Optionally, when the silicon wafer is an N-type silicon wafer, forming a first passivation layer on a surface of the diffusion layer facing away from the silicon wafer includes:
forming an aluminum oxide layer on the surface of the diffusion layer, which is far away from the silicon wafer;
and forming a silicon nitride layer on the surface of the aluminum oxide layer, which is far away from the diffusion layer.
The application also provides a passivated contact crystalline silicon solar cell, and the passivated contact crystalline silicon solar cell is prepared by any one of the manufacturing methods of the passivated contact crystalline silicon solar cell.
The manufacturing method of the passivated contact crystalline silicon solar cell comprises the steps of forming a diffusion layer on the front side of a silicon wafer; respectively forming an oxide layer on the back surface of the silicon wafer and the surface of the diffusion layer, which is far away from the silicon wafer, and forming a polysilicon layer on the surface of the oxide layer, which is far away from the silicon wafer; diffusing the polysilicon layer on the back surface to form a doped polysilicon layer; removing the oxide layer and the polysilicon layer on the front surface by using an acid mixed solution, wherein the acid mixed solution comprises hydrofluoric acid, nitric acid and sulfuric acid; removing the doped glass layer generated during the formation of the diffusion layer and the formation of the doped polysilicon layer; forming a first passivation layer on the surface of the diffusion layer, which is far away from the silicon wafer; forming a second passivation layer on the surface of the doped polycrystalline silicon layer, which is far away from the silicon wafer; and forming a first electrode on the surface of the first passivation layer, which is far away from the diffusion layer, and forming a second electrode on the surface of the second passivation layer, which is far away from the doped polycrystalline silicon layer.
Therefore, the manufacturing method of the passivated contact crystalline silicon solar cell does not need to carry out the step of removing the doped glass layer on the front side by using hydrofluoric acid after the doped polycrystalline silicon is formed, the oxidation layer and the polycrystalline silicon layer on the front side are directly removed by using the acid mixed liquid, the process flow is simplified, the additive is not needed to be added, the cost is reduced, the pollution of the additive to the silicon wafer and the environment is avoided, and the efficiency and the yield of the cell are improved. In addition, the application also provides a passivated contact crystalline silicon solar cell with the advantages.
Drawings
For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a flowchart of a method for manufacturing a passivated contact crystalline silicon solar cell according to an embodiment of the present disclosure.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As described in the background section, in the prior art, when performing the plating removal, the front PSG needs to be removed by hydrofluoric acid, and then the alkaline solution with the additive needs to be used to perform the plating removal, which is complicated in process, increases the cost due to the use of the additive, causes a certain pressure on the subsequent pipeline cleaning, and seriously affects the efficiency and yield of the battery due to the unclean additive cleaning.
In view of the above, the present application provides a method for manufacturing a passivated contact crystalline silicon solar cell, please refer to fig. 1, where fig. 1 is a flowchart of a method for manufacturing a passivated contact crystalline silicon solar cell according to an embodiment of the present application, and the method includes:
step S101: and forming a diffusion layer on the front surface of the silicon wafer.
Specifically, the silicon wafer is an N-type silicon wafer, and boron diffusion is performed on the front surface of the silicon wafer. Further, after diffusion, the back and edge of the silicon wafer need to be etched to remove the PN junction, but the borosilicate glass or phosphosilicate glass on the front side of the silicon wafer remains.
It should be noted that the front surface of the silicon wafer is the front surface of the solar cell, i.e. the surface receiving the solar light irradiation, and the back surface of the silicon wafer is opposite to the front surface.
Step S102: and respectively forming an oxide layer on the back surface of the silicon wafer and the surface of the diffusion layer departing from the silicon wafer, and forming a polysilicon layer on the surface of the oxide layer departing from the silicon wafer.
Specifically, in the step, when the oxide layer and the polysilicon layer are formed, a single-slot silicon wafer is inserted.
Optionally, an oxidation layer is formed on the back surface of the silicon wafer and on the surface of the diffusion layer away from the silicon wafer by using a thermal oxidation method.
Optionally, a low-pressure chemical vapor deposition method is adopted, and a polycrystalline silicon layer is formed on the surface of the oxide layer, which is away from the silicon wafer.
Step S103: and diffusing the polysilicon layer on the back surface to form a doped polysilicon layer.
It will be appreciated that the polysilicon layer on the back side, i.e. the oxide layer on the back side of the silicon wafer, is remote from the polysilicon layer on the surface of the silicon wafer.
Specifically, the silicon wafer is an N-type silicon wafer, and phosphorus diffusion is performed on the polysilicon layer located on the back side.
Step S104: and removing the oxide layer and the polysilicon layer on the front surface by using an acid mixed solution, wherein the acid mixed solution comprises hydrofluoric acid, nitric acid and sulfuric acid.
Specifically, the temperature range during the removal of the front oxide layer and the polysilicon layer in the step is 7 ℃ to 15 ℃ inclusive, and the removal time is 30s to 90s inclusive.
Preferably, the volume ratio of the hydrofluoric acid to the nitric acid to the sulfuric acid in the acid mixed solution is in a range of 1:5:5 to 1:25:25, including the end points, so that the problem that the removal effect of the oxide layer and the polysilicon layer on the front side is poor or the time consumption is long when the oxide layer and the polysilicon layer are completely removed is avoided, the process efficiency is low, and meanwhile, the problem that the removal process is not easily controlled and even the silicon wafer is adversely affected due to the fact that the volume ratio is too large and the reaction is severe when the oxide layer and the polysilicon layer are removed is avoided.
Step S105: and removing the doped glass layer generated when the diffusion layer is formed and the doped polycrystalline silicon layer is formed.
It should be noted that the doped glass layer is phosphorosilicate glass or borosilicate glass, and when boron diffusion or boron doping is performed, the generated doped glass layer is the borosilicate glass; when phosphorus diffusion or phosphorus doping is carried out, the produced doped glass is phosphorus-silicon glass.
Step S106: and forming a first passivation layer on the surface of the diffusion layer, which faces away from the silicon wafer.
Optionally, when the silicon wafer is an N-type silicon wafer, forming a first passivation layer on a surface of the diffusion layer facing away from the silicon wafer includes:
forming an aluminum oxide layer on the surface of the diffusion layer, which is far away from the silicon wafer;
and forming a silicon nitride layer on the surface of the aluminum oxide layer, which is far away from the diffusion layer.
Step S107: and forming a second passivation layer on the surface of the doped polycrystalline silicon layer, which is far away from the silicon wafer.
Optionally, forming a second passivation layer on a surface of the doped polysilicon layer facing away from the silicon wafer includes:
and a silicon nitride layer is arranged on the surface of the doped polycrystalline silicon layer, which is far away from the silicon wafer.
Step S108: and forming a first electrode on the surface of the first passivation layer, which is far away from the diffusion layer, and forming a second electrode on the surface of the second passivation layer, which is far away from the doped polycrystalline silicon layer.
Specifically, a screen printing technology is adopted to respectively manufacture a first electrode and a second electrode, and sintering is carried out.
It is understood that the first electrode is a positive electrode and the second electrode is a back electrode.
According to the manufacturing method of the passivated contact crystalline silicon solar cell, after the doped polycrystalline silicon is formed, the step of removing the doped glass layer on the front side by using hydrofluoric acid is not needed, the oxide layer and the polycrystalline silicon layer on the front side are directly removed by using the acid mixed liquid, the process flow is simplified, the additive is not needed, the cost is reduced, the pollution of the additive to a silicon wafer and the environment is avoided, and the efficiency and the yield of the cell are improved.
Preferably, on the basis of the above embodiment, in an embodiment of the present application, after removing the doped glass layer generated when the diffusion layer is formed and when the doped polysilicon layer is formed, the method further includes:
and carrying out RCA cleaning on the silicon wafer with the doped glass layer removed to remove particle impurities and partial metal impurities and improve the surface cleanliness.
It should be noted that the specific RCA cleaning procedure is well known to those skilled in the art and will not be described in detail herein.
Preferably, in an embodiment of the present application, before forming the diffusion layer on the front side of the silicon wafer, the method further includes:
the silicon wafer is subjected to texturing treatment to enhance the light trapping effect, improve the utilization rate of light and further improve the battery efficiency.
The application also provides a passivated contact crystalline silicon solar cell, and the passivated contact crystalline silicon solar cell is prepared by any one of the manufacturing methods of the passivated contact crystalline silicon solar cell.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The passivated contact crystalline silicon solar cell and the manufacturing method thereof provided by the application are described in detail above. The principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and the core idea of the present application. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.
Claims (7)
1. A method for manufacturing a passivated contact crystalline silicon solar cell is characterized by comprising the following steps:
forming a diffusion layer on the front side of the silicon wafer;
respectively forming an oxide layer on the back surface of the silicon wafer and the surface of the diffusion layer, which is far away from the silicon wafer, and forming a polysilicon layer on the surface of the oxide layer, which is far away from the silicon wafer;
diffusing the polysilicon layer on the back surface to form a doped polysilicon layer;
removing the oxide layer and the polysilicon layer on the front surface by using an acid mixed solution, wherein the acid mixed solution comprises hydrofluoric acid, nitric acid and sulfuric acid; the volume ratio of hydrofluoric acid, nitric acid and sulfuric acid in the acid mixed solution is 1:5:5 to 1:25:25 inclusive;
removing the doped glass layer generated during the formation of the diffusion layer and the formation of the doped polysilicon layer;
forming a first passivation layer on the surface of the diffusion layer, which is far away from the silicon wafer;
forming a second passivation layer on the surface of the doped polycrystalline silicon layer, which is far away from the silicon wafer;
and forming a first electrode on the surface of the first passivation layer, which is far away from the diffusion layer, and forming a second electrode on the surface of the second passivation layer, which is far away from the doped polycrystalline silicon layer.
2. The method of making a passivated contact crystalline silicon solar cell of claim 1 further comprising, after removing the doped glass layer created when forming the diffusion layer and when forming the doped polysilicon layer:
and carrying out RCA cleaning on the silicon wafer with the doped glass layer removed.
3. The method of making a passivated contact crystalline silicon solar cell of claim 1 further comprising, prior to forming a diffusion layer on the front side of the silicon wafer:
and texturing the silicon wafer.
4. The method of manufacturing a passivated contact crystalline silicon solar cell of claim 1 wherein forming an oxide layer on the back side of the silicon wafer and the surface of the diffusion layer facing away from the silicon wafer comprises:
and respectively forming oxide layers on the back surface of the silicon wafer and the surface of the diffusion layer deviating from the silicon wafer by adopting a thermal oxidation method.
5. The method of making a passivated contact crystalline silicon solar cell of claim 1 wherein forming a polysilicon layer on a surface of the oxide layer facing away from the silicon wafer comprises:
and forming a polycrystalline silicon layer on the surface of the oxide layer deviating from the silicon wafer by adopting a low-pressure chemical vapor deposition method.
6. The method of manufacturing a passivated contact crystalline silicon solar cell according to any of claims 1 to 5 wherein forming a first passivation layer on the surface of the diffusion layer facing away from the silicon wafer comprises:
forming an aluminum oxide layer on the surface of the diffusion layer, which is far away from the silicon wafer;
and forming a silicon nitride layer on the surface of the aluminum oxide layer, which is far away from the diffusion layer.
7. A passivated contact crystalline silicon solar cell, characterized in that the passivated contact crystalline silicon solar cell is manufactured by the passivated contact crystalline silicon solar cell manufacturing method of any one of claims 1 to 6.
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