CN111180312B - 一种适用于集成电路的回流焊清洗方法 - Google Patents
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- 238000005476 soldering Methods 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 48
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- 238000004806 packaging method and process Methods 0.000 claims abstract description 28
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000012459 cleaning agent Substances 0.000 claims abstract description 18
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 17
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- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 15
- 239000000919 ceramic Substances 0.000 claims abstract description 10
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- B08B1/143—
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/008—Soldering within a furnace
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/808—Bonding techniques
- H01L2224/80801—Soldering or alloying
- H01L2224/80815—Reflow soldering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/80909—Post-treatment of the bonding area
- H01L2224/8091—Cleaning, e.g. oxide removal step, desmearing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/80909—Post-treatment of the bonding area
- H01L2224/8091—Cleaning, e.g. oxide removal step, desmearing
- H01L2224/80912—Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow
Abstract
一种适用于集成电路的回流焊清洗方法,包括首先将集成电路中混合电路和模块需焊膏回流焊的芯片、电子元器件和陶瓷基板,分为两部分回流焊;接着对第二部分进行清洗将电子元器件和陶瓷基板部分回流焊焊接于封装腔体中,然后将封装腔体置于盛有清洗剂的容器中进行超声清洗;清洗完成后又置于盛有酒精的容器中进行超声清洗;然后将封装腔体置于去离子水下进行防静电布冲洗擦拭;清洗干净后置于80℃的烘箱中烘干备用;之后对第一部分进行清洗,方法同第二部分。本方法既达到了回流焊清洗后干净的目的,也避免了因清洗器件表面状态不同而造成的清洗损伤,适用于需要回流焊清洗的集成电路封装,也可应用于需要回流焊清洗的其它器件。
Description
技术领域
本发明涉及集成电路的制造,具体来说,涉及用于集成电路的回流焊清洗技术。
背景技术
在集成电路封装中,尤其是在模块和混合电路的组装过程,除了进行相应的芯片粘接外,还需要进行相应的电子元器件如电阻、电容和基板粘接。这类产品往往需要较高的粘接强度与高导电导热性能,以满足其在使用过程的低功耗和稳定性能,因此常常采用焊膏回流焊来焊接模块和混合电路中的芯片、电子元器件、基板,以达到较高的粘接强度与高导电导热性能。然而,焊膏中含有以松香为主的助焊剂,在采用焊膏回流焊过程中不能避免多余的松香从焊膏中分离出来,聚集在粘接后的芯片、电子元器件、陶瓷基板的周边,或者飞溅在其表面上,造成回流焊工艺的沾污,因此需要对回流焊后的产品进行清洗。而这种清洗过程主要涉及松香与其它多余物的清洗。为了将集成电路封装腔体中的松香与其它多余物清洗干净,往往是在回流焊完成后将芯片、电子元件、基板同时进行常规的清洗。方法主要是采用清洗剂超声清洗、酒精超声清洗、去离子水清洗等3步清洗法。在整个集成电路封装腔体中,芯片易碎极易划伤和腐蚀,电子元器件和基板耐腐蚀不易划伤,然而在传统的回流焊清洗工艺中很少注意到这点,更少去调节相应的清洗参数。因此,传统清洗的过程往往会造成以下问题:①在基板和电子元件清洗干净的同时,芯片因超声太久而造成键合点腐蚀;②芯片清洗干净的同时,基板和电子元件还有待清洗的多余物;③部分松香和有机物在较高频率的超声环境下易产生络合物,与电子元件融为一体,极难清洗掉;以上的任何一个缺陷都足以使得整款集成电路产品直接报废。
经检索,涉及集成电路回流焊的专利申请件仅有2009100385978号《水基回流焊炉膛清洗剂》和2018113231356号《一种用于钎焊集成电路板的回流焊炉》,均与集成电路的回流焊清洗基本无关。
发明内容
本发明旨在提供一种适用于集成电路的回流焊清洗方法,以确保在清洗电子元器件和陶瓷基板的同时不影响芯片的清洗,满足集成电路中芯片和电子元器件的无损清洗的要求。
发明人提供的适用于集成电路的回流焊清洗方法,包括以下步骤:
1. 分类:
将集成电路中混合电路和模块需焊膏回流焊的芯片、电子元器件和陶瓷基板,分为两批回流焊;其中表面脆弱,不耐腐蚀的芯片分为第一部分,而耐腐蚀、不易划伤电子元器件和陶瓷基板分为第二部分;
2. 对第二部分进行清洗:
将电子元器件和陶瓷基板这一批回流焊焊接于封装腔体中,然后将封装腔体置于盛有清洗剂的容器中进行超声清洗;清洗完成后又置于盛有酒精的容器中进行超声清洗;然后将封装腔体置于去离子水下进行防静电布冲洗擦拭;清洗干净后置于80℃的烘箱中烘干备用;
3. 第二部分的封装:
将上述已经完成电子元器件和基板焊接烘干备用的集成电路封装腔体进行芯片回流焊于腔体内;
4. 对第一部分进行清洗:
将完成芯片回流焊的封装腔体置于盛有清洗剂的容器中进行超声清洗,洗去松香和多余物;清洗完成后又置于盛有酒精的容器中进行超声清洗;然后将封装腔体置于去离子水下进行防静电布冲洗擦拭;清洗干净后置于80℃的烘箱中烘干,备用;
5. 第一部分封装之后,两部分的清洗完成。
在上述方法的第2步中,所述清洗剂是一种多组分共氟溶剂,其型号为MC-210;所述酒精为无水乙醇;所述去离子水电导率为1-1.5μS/cm);所述清洗过程中的工艺条件为:清洗机超声频率为60-70kHZ、温度控制为35℃、清洗时间为5min。
在上述方法的第4步中,所述清洗剂是一种多组分共氟溶剂,其型号为MC-210;所述酒精为无水乙醇;所述去离子水电导率为1-1.5μS/cm;所述清洗过程中的工艺条件为:清洗机超声频率为30-40kHZ、温度控制为50℃、清洗时间为5min。
本发明的技术原理是:对于需焊膏回流焊的芯片和电子元件进行分类,分为两部分进行分别回流焊后清洗。在回流焊过程中采用先耐腐蚀、不易划伤的回流焊电子元器件和基板类,接着安排相应较高强度的清洗工艺清洗干净;再对表面脆弱,不耐腐蚀回流焊芯片类清洗,接着安排相应较低强度的清洗工艺清洗干净;这种采用先后顺序回流焊然后分别清洗的方法避免了传统工艺的不分先后顺序回流焊清洗过程中的芯片键合点腐蚀、腔体内沾污清洗不干净和成品率不高等问题。
本发明的回流焊清洗方法,首先对封装腔体内的芯片、电子元器件和基板进行了分类回流焊清洗,分为表面脆弱,不耐腐蚀的芯片类、耐腐蚀、不易划伤的电子元器件+基板类;其次,依照先回流焊电子元器件+基板类,再封装腔体中回流焊芯片的顺序进行清洗;其回流焊清洗方式,既达到了回流焊清洗后干净的目的,也避免了因清洗器件表面状态不同而造成的清洗损伤。本方法应用于需要回流焊清洗的集成电路封装,也可应用于需要回流焊清洗的其它器件。
附图说明
图1为传统的回流焊清洗工艺流程框图;
图2为本发明的回流焊清洗工艺流程框图。
实施方式
实施例 在集成电路FH547型功率运算放大器组装过程中,涉及芯片,基板和其它电子器件组装,该工艺采用银锡焊膏回流焊工艺。传统的方法是首先采用银锡焊膏将芯片、电子元器件和基板同时粘在封装腔体内,然后经过充满保护气氛的回流焊炉进行回流焊,最后采用传统的回流焊清洗工艺进行清洗,即清洗剂超声清洗、酒精超声清洗、去离子水清洗3步。然而,在清洗的过程中发现,电子元器件和基板清洗干净的时候,芯片表面的焊盘出现了腐蚀,以至于后期键合不上;或者芯片清洗干净时,电子元器件和基板表面还存在很多未能清洗掉的有机物。
为此,采用发明的回流焊清洗方法:在回流焊前进行分类,分为芯片类和电子元器件+基板类,先回流焊清洗FH547中的电子元器件+基板,烘干封装腔体,再回流焊清洗FH547中的芯片。具体工艺如下:先将电子元器件+基板这一类回流焊焊接于封装腔体中,然后将封装腔体置于盛有100mL清洗剂(清洗剂型号:MC-210,一种多组分共氟溶剂;供应商:上海敏晨化工有限公司)的容器中进行超声清洗;清洗完成后又置于盛有100mL无水酒精(酒精为无水乙醇CH3CH2OH,分析纯;供应商:四川西陇科学有限公司)的容器中进行超声清洗;然后将封装腔体置于去离子水(去离子水电导率:1-1.5μS/cm)下进行防静电布冲洗擦拭;清洗干净后置于80℃的烘干中烘干备用;该过程中清洗机参数为超声频率(65KHZ)、温度(35℃)、时间(5min)。2、将上述已经完成电子元器件和基板焊接烘干备用的集成电路封装腔体进行芯片回流焊于腔体内,然后进行回流焊清洗。步骤同上,先将完成芯片回流焊的封装腔体置于盛有100mL清洗剂(清洗剂型号:MC-210,一种多组分共氟溶剂;供应商:上海敏晨化工有限公司)的容器中进行超声清洗;清洗完成后又置于盛有100mL无水酒精(酒精为无水乙醇CH3CH2OH,分析纯;供应商:四川西陇科学有限公司)的容器中进行超声清洗;然后将封装腔体置于去离子水(去离子水电导率:1-1.5μS/cm)下进行防静电布冲洗擦拭;清洗干净后置于80℃的烘箱中烘干。该过程中清洗机参数为超声频率(35KHZ)、温度(50℃)、时间(5min)。3、通过上述两部分的清洗即完成了集成电路封装腔体中焊膏回流焊后的清洗。最后将回流焊清洗完成的FH547产品中的芯片、电子元器件和基板放置于高倍显微镜下进行检查。检查结果:芯片,电子元器件和基板表面干净未发现有多余物,芯片上焊盘也未发现腐蚀损伤,因此,检验合格。
Claims (1)
1.一种适用于集成电路的回流焊清洗方法,其特征在于该方法包括以下步骤:
(1)分类:
将集成电路中混合电路和模块需焊膏回流焊的芯片、电子元器件和陶瓷基板,分为两批回流焊;其中表面脆弱,不耐腐蚀的芯片分为第一部分,而耐腐蚀、不易划伤电子元器件和陶瓷基板分为第二部分;
(2)对第二部分进行清洗:
将电子元器件和陶瓷基板这一部分回流焊焊接于封装腔体中,然后将封装腔体置于盛有清洗剂的容器中进行超声清洗;清洗完成后又置于盛有酒精的容器中进行超声清洗;然后将封装腔体置于去离子水下进行防静电布冲洗擦拭;清洗干净后置于80℃的烘箱中烘干备用;
(3)第二部分的封装:
将上述已经完成电子元器件和基板焊接烘干备用的集成电路封装腔体进行芯片回流焊于腔体内;
(4)对第一部分进行清洗:
将完成芯片回流焊的封装腔体置于盛有清洗剂的容器中进行超声清洗,洗去松香和多余物;清洗完成后又置于盛有酒精的容器中进行超声清洗;然后将封装腔体置于去离子水下进行防静电布冲洗擦拭;清洗干净后置于80℃的烘箱中烘干,备用;
(5)第一部分封装之后,两部分的清洗完成;
所述第(2)步中,所述清洗剂是一种多组分共氟溶剂,其型号为MC-210;所述酒精为无水乙醇;所述去离子水电导率为1-1.5μS/cm;所述第二部分清洗过程中的工艺条件为:清洗机超声频率为60-70kHZ、温度控制为35℃、清洗时间为5min;
所述第(4)步中,所述清洗剂是一种多组分共氟溶剂,其型号为MC-210;所述酒精为无水乙醇;所述去离子水电导率为1-1.5μS/cm;所述第一部分清洗过程中的工艺条件为:清洗机超声频率为30-40kHZ、温度控制为50℃、清洗时间为5min。
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