CN111175542A - Temperature compensation method for Wheatstone bridge as AFM position sensor - Google Patents
Temperature compensation method for Wheatstone bridge as AFM position sensor Download PDFInfo
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- CN111175542A CN111175542A CN201911274831.7A CN201911274831A CN111175542A CN 111175542 A CN111175542 A CN 111175542A CN 201911274831 A CN201911274831 A CN 201911274831A CN 111175542 A CN111175542 A CN 111175542A
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- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
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- G01B7/003—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring position, not involving coordinate determination
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q10/00—Scanning or positioning arrangements, i.e. arrangements for actively controlling the movement or position of the probe
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Abstract
The invention discloses a temperature compensation method of a Wheatstone bridge serving as an AFM position sensor. The invention relates to a temperature compensation method of a Wheatstone bridge used as an AFM position sensor in an AFM-SEM hybrid microscope system, wherein the Wheatstone bridge comprises the following steps: the first resistor and the second resistor are connected in series to form a first support arm, the third resistor and the fourth resistor are connected in series to form a second support arm, and the first support arm and the second support arm are connected in parallel. The invention has the beneficial effects that: the influence of temperature on the position sensor (Wheatstone bridge) can be reduced, and the position signal drift caused by poor heat dissipation of the SEM high-vacuum environment is reduced, so that the AFM based on the SCSG position sensor can be compatible with the SEM high-vacuum environment and large-scale appearance scanning is realized.
Description
Technical Field
The invention relates to the field of AFM-SEM hybrid microscopes, in particular to a temperature compensation method of a Wheatstone bridge used as an AFM position sensor in an AFM-SEM hybrid microscope system.
Background
Hybrid microscopes provide complementary imaging functionality and multimodal measurements have higher data acquisition efficiency than single microscopes, for example, SEM can only provide 2D images of a sample without depth information, while AFM can provide depth information of a sample. Based on different physical principles of imaging, AFM and SEM represent two complementary imaging techniques. The conventional method of measuring a sample is to image the sample in the AFM and SEM, respectively, and then correlate the images to obtain more information about the sample. However, transferring the sample back and forth and switching between the AFM and SEM can damage the sample, and it can be very difficult to view the same area of the sample on both microscopes. The AFM-SEM hybrid microscope system can be made very convenient by integrating the AFM in the SEM. Despite the many advantages of AFM-SEM hybrid microscope systems, there remain some technical challenges to make AFMs compatible with SEM without affecting the performance and functionality of both. These challenges come from AFM size limitations, poor heat dissipation from the vacuum environment, electron beam effects on the AFM force feedback signal, and so forth.
Typical AFMs with large aspect scan ranges (tens of microns) require high resolution position sensors to ensure measurement accuracy. Piezo-driven sweeps are characterized by hysteresis and creep, which results in measurement errors of around 30%. There are many position sensors that can achieve nanometer-scale resolution based on different measurement principles, such as capacitance, inductance, strain resistance, eddy current, optical interference, photoelectric and magnetic encoders, and so on. Based on eddy current, inductance and magnetic control encoders, too much space is occupied, the encoders are inconvenient to integrate on an AFM, and the generated magnetic field causes SEM imaging distortion; sensors based on photoelectric encoders can cause signal drift due to high power consumption, and their performance is not stable although they can be used in SEM. The capacitance sensor has high sensitivity and low heat dissipation, but the size is slightly larger, the capacitance sensor is difficult to integrate on the limited volume of the AFM, the related signal conditioning circuit is too complicated, high power consumption is generated, the capacitance sensor can only be arranged outside the SEM, and the connection between the capacitance sensor and the controller by cables is very difficult and easily causes noise related problems. The metal strain gauge is small in size and convenient to integrate, but the strain sensitivity of the metal strain gauge is too low, so that the resolution and the measurement accuracy of the AFM are reduced, and the metal strain gauge is not suitable for high-performance AFM application. The semiconductor strain gauge is small in size, low in integration complexity, simple in signal conditioning circuit, low in power consumption and easy to integrate on the AFM, has a high strain coefficient, and is very important for improving AFM performance and achieving sub-nanometer resolution, but the SCSG has high temperature sensitivity, the high vacuum environment of the SEM is not beneficial to heat dissipation, temperature change can affect SCSG reading and cause position signal drift, and temperature compensation needs to be carried out on the SCSG so as to reduce the influence of temperature on the SCSG.
The traditional technology has the following technical problems:
the SCSG temperature compensation method mentioned in u.s.pat.no.3368179 is to incorporate a compensation material having low temperature sensitivity into a semiconductor strain gauge material from the viewpoint of SCSG production process, and it is desirable that the overall semiconductor strain gauge exhibits a relatively small temperature sensitivity coefficient by virtue of the low temperature sensitivity coefficient of the compensation material. Although this method can alleviate the effect of temperature on the SCSG to some extent, it also reduces the strain coefficient of the SCSG itself, and increases the production and application costs as the manufacturing process becomes more complicated.
In the document a monolithic MEMS position sensor for closed-loop high-speed micro-fabrication, n.hosseini et al mention that co-fabricated SCSGs of the same design exhibit highly matched temperature coefficients in MEMS fabrication. If two or four co-manufactured SCSGs of the same design are used together to form a half-bridge or a full-bridge, the overall temperature coefficient is well compensated without any adjustments. However, the MEMS fabrication process for SCSG position sensors is complex and expensive, and such SCSGs are not readily available.
Disclosure of Invention
The invention aims to provide a temperature compensation method of a Wheatstone bridge used as an AFM position sensor in an AFM-SEM hybrid microscope system.
In order to solve the above technical problem, the present invention provides a temperature compensation method for a wheatstone bridge used as an AFM position sensor in an AFM-SEM hybrid microscope system, wherein the wheatstone bridge comprises: the circuit comprises a first resistor, a second resistor, a third resistor and a fourth resistor; the first resistor, the second resistor, the third resistor and the fourth resistor are composed of semiconductor strain gauges; the first resistor and the second resistor are connected in series to form a first support arm, the third resistor and the fourth resistor are connected in series to form a second support arm, and the first support arm and the second support arm are connected in parallel;
the method comprises the following steps:
and performing series-parallel compensation on the first resistor and the second resistor through a first compensation resistor and a second compensation resistor, wherein the compensation meets the following principle: the first compensation resistor and the second compensation resistor cannot be connected with the first resistor or the second resistor in parallel or in series at the same time; when the first compensation resistor and the second compensation resistor compensate the two resistors of the first support arm respectively, the connection relations between the two groups of compensation resistors and the resistors to be compensated are different;
and performing series-parallel compensation on the third resistor and the fourth resistor through a third compensation resistor and a fourth compensation resistor, wherein the compensation meets the following principle: the third compensation resistor and the fourth compensation resistor cannot be connected with the third resistor or the fourth resistor in parallel or in series at the same time; when the third compensation resistor and the fourth compensation resistor compensate the two resistors of the second support arm respectively, the connection relations between the two groups of compensation resistors and the resistors to be compensated are different;
the resistance values of the first compensation resistor, the second compensation resistor, the third compensation resistor and the fourth compensation resistor meet the requirement that the differential output of the Wheatstone bridge is zero in a static state in a preset temperature interval, and the common-mode voltage of the Wheatstone bridge meets half of the supply voltage in a dynamic state.
In one embodiment, the semiconductor strain gage is a P-type semiconductor strain gage.
In one embodiment, the semiconductor strain gauge is an N-type semiconductor strain gauge.
In one embodiment, the method for solving the resistances of the first compensation resistor, the second compensation resistor, the third compensation resistor and the fourth compensation resistor is as follows:
placing the Wheatstone bridge in a constant temperature environment, taking a certain temperature point in a preset temperature interval, and recording the resistance values of the first resistor, the second resistor, the third resistor and the fourth resistor at the temperature point;
at this temperature point, the system of equations is set forth according to the following conditions: the differential output of the wheatstone bridge is to be zero in a static state, and the common-mode voltage of the wheatstone bridge is to be half of the supply voltage in a dynamic state;
and substituting the resistance values of the first resistor, the second resistor, the third resistor and the fourth resistor recorded at the temperature point into an equation set to solve the resistance values of the first compensation resistor, the second compensation resistor, the third compensation resistor and the fourth compensation resistor.
In one embodiment, the first arm and the second arm are compensated in the same or different ways. The two compensation resistors of the same finger have the same series-parallel relationship with the resistors in the two arms.
Based on the same inventive concept, a Wheatstone bridge used as a position sensor in an AFM-SEM hybrid microscope system is obtained by any one of the temperature compensation methods.
Based on the same inventive concept, the SEM-compatible AFM is characterized by comprising the Wheatstone bridge.
Based on the same inventive concept, the present application also provides a computer device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, the processor implementing the steps of any of the methods when executing the program.
Based on the same inventive concept, the present application also provides a computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, carries out the steps of any of the methods.
Based on the same inventive concept, the present application further provides a processor for executing a program, wherein the program executes to perform any one of the methods.
The invention has the beneficial effects that:
the influence of temperature on the position sensor (Wheatstone bridge) can be reduced, and the position signal drift caused by poor heat dissipation of the SEM high-vacuum environment is reduced, so that the AFM based on the SCSG position sensor can be compatible with the SEM high-vacuum environment and large-scale appearance scanning is realized. The temperature compensation scheme provided by the embodiment can ensure that the position sensor has no saturation and signal drift phenomena in the output signal of the bridge when the AFM performs large-scale profile scanning within a certain temperature range.
Drawings
Fig. 1 shows a wheatstone bridge, which is an AFM position sensor composed of 4 SCSGs (G1, G2, G3 and G4), wherein arrows in fig. 1 indicate the trend of resistance change of the SCSG after stress, an upward arrow indicates resistance increase, a downward arrow indicates resistance decrease, and the directions of the arrows in the figure are only schematic, so long as the same direction of resistance change of G1G4 is ensured, and the same direction of resistance change of G2G3 is ensured. The figure also includes a series resistor RS1、RS2Parallel resistance R of G2P1Parallel resistance R of G3P2,RP1Or a parallel resistor of G4, RP2The parallel resistor of G1 can also be used, and the figure is only schematic of one of the parallel cases. RS1In series between G1G2, RS2Connected in series between G3G 4. G1G3RP2The upper end is connected with a power supply VCC, G2G4RP1The lower end is grounded. vp, vn are two paths of differential signals output by Wheatstone bridge, vp can be connected with RS1The upper end can also be the lower end, vn can be connected with RS2The upper end can also be the lower end。
Fig. 2 shows two differential signals vp, vn output by the wheatstone bridge after temperature compensation of the SCSG, and the common mode voltage of the bridge. The differential output vp and vn of the bridge after temperature compensation does not generate the phenomenon of saturation overflow along with the increase of AFM displacement. The distance on the x-axis represents the distance the AFM is moved, which causes the SCSG to deform, and thus the vp, vn voltages change. The y-axis is the bridge supply voltage, which is assumed to be 3V.
Fig. 3 and 4 respectively show the phenomenon of bridge differential signal saturation overflow caused by the SCSG not performing temperature compensation.
Detailed Description
The present invention is further described below in conjunction with the following figures and specific examples so that those skilled in the art may better understand the present invention and practice it, but the examples are not intended to limit the present invention.
SCSG has a very high strain coefficient (the resistance value is in a linear relationship with temperature, and is positively linearly related to a P-type semiconductor wafer and is positively linearly related to an N-type semiconductor wafer), and is very important for improving AFM performance and realizing sub-nanometer resolution, but because SCSG has very high temperature sensitivity, poor heat dissipation in SEM vacuum environment easily causes position signal drift, and scanning quality is affected. The present embodiment provides a temperature compensation method, which can reduce the influence of temperature on a position signal (wheatstone bridge), so that the SCSG position sensor is compatible with the SEM and realizes large-scale appearance scanning. The temperature compensation scheme provided by the embodiment can ensure that the position sensor has no saturation and signal drift phenomena in the output signal of the bridge when the AFM performs large-scale profile scanning within a certain temperature range. The compensation principle must satisfy two conditions, i.e. when the static state is the bridge output differential signal is zero, i.e. vp equals vn, and when the dynamic state is the bridge common mode voltage is VCC/2, i.e. VCC/2
The compensation circuit is as shown in fig. 2. The wheatstone bridge compensation circuit according to fig. 2 may list four equations based on the compensation principle.
VBdiff(T＝T1,RS1,RP1,RS2,RP2)＝0 ①
VBdiff(T＝T2,RS1,RP1,RS2,RP2)＝0 ②
VBcm(T＝T1,RS1,RP1,RS2,RP2)＝0.5VCC ③
VBcm(T＝T2,RS1,RP1,RS2,RP2)＝0.5VCC ④
Let G2 after compensation be regarded as Rc2 and G3 be regarded as Rc 3.
At the time of the temperature T1,
at the time of the temperature T2,
g2(T1), G3(T1), G2(T2), and G3(T2) are resistance values measured at times T1 and T2, respectively, and are known quantities.
at temperature T1, the equation of the time equation (r) can be expressed as:
equation of the equation of time (c) can be expressed at temperature T2 as:
the common mode equation ④ at temperature T2 can be expressed as:
respectively put into
The following can be obtained:
substituting the radicals to the arrows
The following can be obtained:
assuming that the temperature range of SCSG compensation is T-T1-T2, the compensation resistor R in the equation setS1,RP1,RS2,RP2the compensation resistor is an unknown quantity and is a value which needs to be obtained finally, wherein the formula ③ ④ indicates that the value of the compensation resistor in a temperature range from T-T1 to T-T2 needs to make the differential output of the bridge be zero in a static state, namely vp-vn, and the formula (ii) indicates that the value of the compensation resistor in the temperature range from T-T1 to T-T2 needs to make the common-mode voltage of the bridge meet half of the supply voltage in a dynamic state
Will benefit fromThe Stones bridge is put into a constant temperature environment, 4 temperature points are taken at equal intervals between T1-T2, the resistance value of G1G2G3G4 at the moment is recorded at each temperature point, because the resistance value of the SCSG is in a linear relation with the temperature, when the resistance value (discrete points) measured by each SCSG at different temperatures can fall on a fitted straight line, the measured result is correct (the resistance value is in a linear relation with the temperature), when the measured discrete points can not fall on the fitted straight line well, namely the deviation is large, the measured value group is incorrect, re-measurement is abandoned, 4 groups of known data can obtain 4 unknown quantities in an equation group, and at the moment, a compensation resistor R is obtainedS1,RP1,RS2,RP2And then applying the compensation resistor to the circuit according to the obtained specific resistance value.
The wheatstone bridge comprises: the circuit comprises a first resistor, a second resistor, a third resistor and a fourth resistor; the first resistor, the second resistor, the third resistor and the fourth resistor are composed of semiconductor strain gauges; the first resistor and the second resistor are connected in series to form a first support arm, the third resistor and the fourth resistor are connected in series to form a second support arm, and the first support arm and the second support arm are connected in parallel.
The compensation principle is as follows:
performing series-parallel compensation on the first resistor G1 and the second resistor G2 through a first compensation resistor and a second compensation resistor, wherein the first compensation resistor is connected in series or in parallel with the first resistor or the second resistor; the second compensation resistor is connected with the first resistor or the second resistor in series or in parallel; the compensation satisfies the following principles: the first compensation resistor and the second compensation resistor cannot be connected with the first resistor or the second resistor in parallel or in series at the same time; when the first compensation resistor and the second compensation resistor compensate two resistors of the first support arm respectively, the connection relations between the two groups of compensation resistors and the resistors to be compensated are different (the compensation resistors and the resistors to be compensated which are referred to by different fingers cannot be connected in parallel or in series at the same time; it can be understood that the first compensation resistor and the second compensation resistor can also compensate one resistor in the first support arm at the same time);
performing series-parallel compensation on the third resistor G3 and the fourth resistor G4 through a third compensation resistor and a fourth compensation resistor, wherein the third compensation resistor is connected in series or in parallel with the third resistor or the third resistor; the fourth compensation resistor is connected with the third resistor or the fourth resistor in series or in parallel; the compensation satisfies the following principles: the third compensation resistor and the fourth compensation resistor cannot be connected with the third resistor or the fourth resistor in parallel or in series at the same time; when the third compensation resistor and the fourth compensation resistor compensate two resistors of the second support arm respectively, the connection relations between the two groups of compensation resistors and the resistors to be compensated are different (the compensation resistors and the resistors to be compensated which are referred to by different fingers cannot be connected in parallel or in series at the same time; it can be understood that the third compensation resistor and the fourth compensation resistor can also compensate one resistor in the second support arm at the same time). There were 16 cases in total, see table 1.
TABLE 1 SCSG temperature compensating resistance configuration table (subscript S, denoting series, subscript P, denoting parallel)
The following explains the connection method of the compensation resistor in the circuit of fig. 2 with a configuration of 3. The calculated compensation resistance is connected according to the circuit connection mode of the figure 2. The configuration result of configuration 3 indicates that SCSG2 requires a parallel resistor RP1And connected in series with a resistor RS1The SCSG3 needs to be connected with a resistor R in parallelP2And connected in series with a resistor RS2. Because R isS1Is a series resistance belonging to G2, so vp is from RS1And (4) outputting at the upper end. Because R isS2Is a series resistance belonging to G3, so vn is from RS2And the lower end outputs.
After the position sensor composed of the SCSG is subjected to temperature compensation, the bridge balance state is always kept in a compensation temperature range, and the temperature cannot influence the AFM position sensor. It can be seen from fig. 3 that the voltage variation of the differential output vpvn of the wheatstone bridge is symmetrical and floats up and down on the basis of the common mode voltage VCC/2, and the phenomenon of saturation overflow of the differential signal shown in fig. 3 and fig. 4 can not occur.
The above-mentioned embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. The equivalent substitution or change made by the technical personnel in the technical field on the basis of the invention is all within the protection scope of the invention. The protection scope of the invention is subject to the claims.
Claims (10)
1. A method of temperature compensation for a wheatstone bridge used as an AFM position sensor in an AFM-SEM hybrid microscope system, wherein the wheatstone bridge comprises: the circuit comprises a first resistor, a second resistor, a third resistor and a fourth resistor; the first resistor, the second resistor, the third resistor and the fourth resistor are composed of semiconductor strain gauges; the first resistor and the second resistor are connected in series to form a first support arm, the third resistor and the fourth resistor are connected in series to form a second support arm, and the first support arm and the second support arm are connected in parallel;
it is characterized by comprising:
and performing series-parallel compensation on the first resistor and the second resistor through a first compensation resistor and a second compensation resistor, wherein the compensation meets the following principle: the first compensation resistor and the second compensation resistor cannot be connected with the first resistor or the second resistor in parallel or in series at the same time; when the first compensation resistor and the second compensation resistor compensate the two resistors of the first support arm respectively, the connection relations between the two groups of compensation resistors and the resistors to be compensated are different;
and performing series-parallel compensation on the third resistor and the fourth resistor through a third compensation resistor and a fourth compensation resistor, wherein the compensation meets the following principle: the third compensation resistor and the fourth compensation resistor cannot be connected with the third resistor or the fourth resistor in parallel or in series at the same time; when the third compensation resistor and the fourth compensation resistor compensate the two resistors of the second support arm respectively, the connection relations between the two groups of compensation resistors and the resistors to be compensated are different.
The resistance values of the first compensation resistor, the second compensation resistor, the third compensation resistor and the fourth compensation resistor meet the requirement that the differential output of the Wheatstone bridge is zero in a static state in a preset temperature interval, and the common-mode voltage of the Wheatstone bridge meets half of the supply voltage in a dynamic state.
2. The method of claim 1, wherein the semiconductor strain gage is a P-type semiconductor strain gage, the temperature compensation method being applied to a wheatstone bridge as an AFM position sensor in an AFM-SEM hybrid microscope system.
3. The method of claim 1, wherein the semiconductor strain gauge is an N-type semiconductor strain gauge for temperature compensation of a wheatstone bridge used as an AFM position sensor in an AFM-SEM hybrid microscope system.
4. The method of claim 1, wherein the first, second, third and fourth compensation resistors have resistance values that are calculated as follows:
placing the Wheatstone bridge in a constant temperature environment, taking a certain temperature point in a preset temperature interval, and recording the resistance values of the first resistor, the second resistor, the third resistor and the fourth resistor at the temperature point;
at this temperature point, the system of equations is set forth according to the following conditions: the differential output of the wheatstone bridge is to be zero in a static state, and the common-mode voltage of the wheatstone bridge is to be half of the supply voltage in a dynamic state;
and substituting the resistance values of the first resistor, the second resistor, the third resistor and the fourth resistor recorded at the temperature point into an equation set to solve the resistance values of the first compensation resistor, the second compensation resistor, the third compensation resistor and the fourth compensation resistor.
5. The method of claim 1, wherein the first arm and the second arm are compensated in the same or different manner by the temperature compensation method applied to a Wheatstone bridge as an AFM position sensor in an AFM-SEM hybrid microscope system.
6. A wheatstone bridge as a position sensor for use in an AFM-SEM hybrid microscope system, characterized by being obtained by the temperature compensation method of any one of claims 1 to 5.
7. An SEM-compatible AFM comprising the Wheatstone bridge of claim 6.
8. A computer device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, characterized in that the steps of the method of any of claims 1 to 5 are implemented when the program is executed by the processor.
9. A computer-readable storage medium, on which a computer program is stored which, when being executed by a processor, carries out the steps of the method of any one of claims 1 to 5.
10. A processor, characterized in that the processor is configured to run a program, wherein the program when running performs the method of any of claims 1 to 5.
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| PCT/CN2019/126324 WO2021114335A1 (en) | 2019-12-12 | 2019-12-18 | Temperature compensation method for wheatstone bridge serving as afm position sensor |
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| CN117949137A (en) * | 2024-03-26 | 2024-04-30 | 锐马（福建）电气制造有限公司 | Temperature compensation method for six-dimensional force sensor |
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| WO2021114335A1 (en) | 2021-06-17 |
| CN111175542B (en) | 2021-04-30 |
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