CN111146129B - 一种微型发光二极管转移装置、转移方法及显示装置 - Google Patents

一种微型发光二极管转移装置、转移方法及显示装置 Download PDF

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CN111146129B
CN111146129B CN202010257544.1A CN202010257544A CN111146129B CN 111146129 B CN111146129 B CN 111146129B CN 202010257544 A CN202010257544 A CN 202010257544A CN 111146129 B CN111146129 B CN 111146129B
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micro light
emitting diode
light emitting
micro
collecting
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CN111146129A (zh
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张玮
孙洋
柳铭岗
陈书志
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TCL China Star Optoelectronics Technology Co Ltd
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TCL China Star Optoelectronics Technology Co Ltd
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Priority to PCT/CN2020/086104 priority patent/WO2021196311A1/zh
Priority to US16/767,135 priority patent/US11621183B2/en
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Abstract

本申请实施例提供一种微型发光二极管转移装置、转移方法及显示装置，本申请的微型发光二极管转移装置包括收集管和驱动装置，收集管具有相对设置的第一端和第二端，所述收集管包括收集口和存储管，所述收集口与所述存储管连通，所述收集口设置在所述第一端，驱动装置设置在所述第二端，所述驱动装置用于提供驱动力，其中，所述驱动装置用于提供驱动力以使得所述微型发光二极管从所述收集口被拾取到所述存储管内，所述存储管可层叠存储至少两个微型发光二极管。本申请可以有效提高转移速度，使得微型发光二极管技术更加适合量产。

Description

一种微型发光二极管转移装置、转移方法及显示装置
技术领域
本申请涉及显示技术领域，具体涉及一种微型发光二极管转移装置、转移方法及显示装置。
背景技术
微型发光二极管（Micro-light emitting diodes，MicroLED）是一种新型自发光显示技术，具有亮度高，发光效率好，功耗低，寿命长且轻薄等优点的显示器件，有望成为下一代主流显示技术。与目前主流显示屏幕LCD和OLED相比，其耗电量明显降低，分别为LCD的10%、OLED的50%，且亮度比OLED高几个数量级。
MicroLED技术主要是将微缩后的几微米到几十微米的LED在基板上进行阵列排布，而形成具有高密度微小尺寸的LED阵列。但目前MicroLED的发展受制于芯片（巨量）转移等关键技术。然而目前，通过巨量转移及巨量转移后的芯片与基板的键合是MicroLED显示技术实现良率提升的瓶颈所在。
现如今，MicroLED转移技术路线主要有范德华力、静电吸附、流体自组装、辐射激光等方式进行转移，完成对位后再进行加热进行焊接，但这些转移方法过程中，都存在速度慢、严重影响MicroLED的量产化。
发明内容
本申请实施例提供一种微型发光二极管转移装置、转移方法及显示装置，能够提高微型发光二极管的转移速度，使得微型发光二极管技术能够更加适合量产。
本申请提供一种微型发光二极管转移装置，包括：
收集管，具有相对设置的第一端和第二端，所述收集管包括收集口和存储管，所述收集口与所述存储管连通，所述收集口设置在所述第一端；
驱动装置，设置在所述第二端，所述驱动装置用于提供驱动力；
其中，所述驱动装置提供驱动力以使得所述微型发光二极管从所述收集口被拾取到所述存储管内，所述存储管可层叠存储至少两个微型发光二极管。
在一些实施例中，所述收集管包括至少两个，多个所述收集管与同一驱动装置连接，所述收集管与所述驱动装置可拆卸连接，所述存储管包括至少两个子连接管，所述子连接管与子连接管可拆卸连接。
在一些实施例中，还包括激光剥离装置，所述激光剥离装置用于剥离所述微型发光二极管。
在一些实施例中，所述收集管为圆柱形腔体、长方形腔体、三角形腔体、菱形腔体、多边形腔体中的任一种。
在一些实施例中，所述收集管材料为聚酰亚胺塑料、聚乙烯塑料、聚对苯二甲酸乙二醇酯塑料、玻璃、石英、金属中的任一种。
本申请实施例还提供一种微型发光二极管转移方法，包括：
采用微型发光二极管转移装置从临时基板上拾取微型发光二极管，其中所述微型发光二极管转移装置为以上所述的微型发光二极管转移装置；
将所述微型发光二极管存储在所述微型发光二极管转移装置的收集管中；
将所述收集管中的微型发光二极管转移到目标基板上。
在一些实施例中，所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管，包括：
通过驱动装置提供驱动力从临时基板上拾取微型发光二极管，其中，所述驱动力为真空力、电磁力、静电力、装置内充满液体时产生的毛细管力中任一种。
在一些实施例中，所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管，包括：
将微型发光二极管从临时基板上剥离；
微型发光二极管转移装置拾取从临时基板上剥离的微型发光二极管。
在一些实施例中，所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管，之前包括：
检测所述微型发光二极管是否合格；
若所述微型发光二极管不合格，将不合格的微型发光二极管通过微型发光二极管转移装置转移到存储区域中。
一种显示装置，采用以上所述方法制造的显示装置。
本申请实施例所提供的微型发光二极管转移装置包括收集管和驱动装置，收集管具有相对设置的第一端和第二端，所述收集管包括收集口和存储管，所述收集口与所述存储管连通，所述收集口设置在所述第一端,驱动装置设置在所述第二端，所述驱动装置用于提供驱动力，其中，所述驱动装置用于提供驱动力以使得所述微型发光二极管从所收集口被拾取到所述存储管内，所述存储管可层叠存储若干微型发光二极管。传统的微型发光二极管转移装置采用阵列式转印头拾取微型发光二极管，这种阵列式转印头只能对应一种临时基板进行拾取，如果临时基板上的微型发光二极管的间距改变，就要更换转印头，而本申请微型发光二极管转移装置，可以将微型发光二极管依次独立地从收集口拾取并存储到存储管内，采用此方式，可以对不同区域的微型发光二极管进行拾取，从而可以适应于从多个规格的基板上拾取微型发光二极管，提高了收集微型发光二极管的灵活性，并且，本申请可对微型发光二极管单独进行拾取，或直接释放至目标基板。进一步提高微型发光二极管在转移过程中的便利性，使得微型发光二极管技术更加适合量产。
附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本申请实施例提供的微型发光二极管转移装置结构示意图。
图2是本申请实施例提供的微型发光二极管转移装置转移微型发光二极管后的结构示意图。
图3是本申请实施例提供的另一种微型发光二极管转移装置的结构示意图。
图4是本申请实施例提供的又一种微型发光二极管转移装置的结构示意图。
图5是本申请实施例提供的微型发光二极管转移方法的流程示意图。
图6是本申请实施例提供的显示装置的结构示意图。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
需要说明的是，在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
本申请实施例提供一种微型发光二极管转移装置、转移方法及显示装置，以下微型发光二极管转移装置做详细介绍。
请参阅图1和图2，图1是本申请实施例提供的微型发光二极管转移装置结构示意图。图2是本申请实施例提供的微型发光二极管转移装置转移微型发光二极管后的结构示意图。
其中，微型发光二极管转移装置10包括收集管11和驱动装置12，收集管11具有相对设置的第一端11a和第二端11b，所述收集管11包括收集口111和存储管112，所述收集口111与所述存储管112连通，所述收集口111设置在所述第一端11a，驱动装置12设置在所述第二端11b，所述驱动装置12用于提供驱动力，其中，所述驱动装置12用于提供驱动力以使得所述微型发光二极管20从所述收集口111被拾取到所述存储管112内，所述存储管112可层叠存储至少两个微型发光二极管20。
需要说明的是，第一端11a可以为收集管11的下端，第二端11b可以为收集管11的上端面。当然，第一端11a也可以为收集管11的上端，第二端11b可以为收集管11的上表面。可以理解的是，第一端11a和第二端11b只是说明收集管11的相对位置关系，可以根据具体的使用情况进行位置互换。
请参阅图3，图3是本申请实施例提供的另一种微型发光二极管转移装置10的结构示意图。其中，所述收集管11包括至少两个，多个所述收集管11与同一驱动装置12连接。可以理解的是，通过多个收集管11可以同时拾取微型发光二极管20。这样可以大大提高拾取微型发光二极管20的速度。
具体的，所述收集管11与所述驱动装置12可拆卸连接，所述收集管包括至少两个子连接管，所述子连接管与子连接管可拆卸连接。更加具体的，收集管11和驱动装置12可以采用螺纹连接或者卡扣连接的方式实现可拆卸连接。子连接管和子连接管也可以采用螺纹连接或者卡扣连接的方式实现可拆卸连接。当然还可以采用其他可拆卸连接的方式，本申请实施例中不过多赘述。
需要说明的是，收集管11与驱动装置12可拆卸连接，这样可以使得运输或者转移微型发光二极管转移装置能够更加方便，同时，子连接管与子连接管可拆卸连接，这样可以根据需要拓展存储的空间，提高微型发光二极管转移装置的适用范围。
具体的，每一个收集管11均连接同一个驱动装置12，这样可以通过驱动装置12使得所有收集管11统一拾取微型发光二极管20，这样不仅能够提升拾取微型发光二极管20的效率，同时还能够降低成本。
另外的，每一个收集管11可以独立连接一个驱动装置12，这样可以根据需要对特定区域的微型发光二极管20进行拾取。比如，微型发光二极管20还可以包括一个检测装置，该检测装置可以检测微型发光二极管20是否合格，若检测到微型发光二极管20不合格，则可以控制对应的驱动装置12将不合格的微型发光二极管20拾取后，放入废品存储区域。又或者，将不合格的微型发光二极管20存储在微型发光二极管20中。
其中，驱动装置12可以包括处理器121和动力机构122，处理器121可以接受处理信号，并控制动力机构122产生动力。可以理解的是，动力机构122可以是真空泵，真空泵可以产生真空吸引力，通过真空吸引力从而使得收集管11可以拾取微型发光二极管20。当然，动力机构122也可以是电磁装置，电磁装置可以产生电磁力，电磁力可以使得收集管11可以拾取微型发光二极管。当然，动力机构122不限于此，本申请实施例中不做过多赘述。
请参阅图4，图4是本申请实施例提供的又一种微型发光二极管转移装置10的结构示意图。其中，微型发光二极管20还包括激光剥离装置13，所述激光剥离装置13用于剥离所述微型发光二极管20。
通过激光剥离装置13将微型发光二极管20从临时基板30上剥离，微型发光二极管转移装置10可以拾取激光剥离装置13剥离后的微型发光二极管20。同时，微型发光二极管转移装置10在拾取剥离的微型发光二极管20时，可以通过重力拾取微型发光二极管20。另外的，在收集管11拾取微型发光二极管20的过程中，可以控制驱动装置12产生驱动力，从而控制微型发光二极管20在收集管11中的下降速度。
其中，所述收集管11为圆柱形腔体、长方形腔体、三角形腔体、菱形腔体、多边形腔体中的任一种。
可以理解的是，收集管11的形状不限于此，收集管11还可以根据微型发光二极管20的形状做适应性的调整。
比如，微型发光二极管20的形状为圆形的，那么收集管11的形状为圆柱形。收集管11的管径大于微型发光二极管20的的直径。当微型发光二极管20收纳在收集管11中时，微型发光二极管20可以依次层叠堆积，因此，收集管11可以收集多个微型发光二极管20。同时，由于收集的微型发光二极管20时层叠堆积的，因此，将微型发光二极管20转移到目标基板上时能够很好的排列。这样进一步的提高了微型发光二极管20的转移速度。
其中，所述收集管11材料为聚酰亚胺塑料、聚乙烯塑料、聚对苯二甲酸乙二醇酯塑料、玻璃、石英、金属中的任一种。
可以理解的是，收集管11的材料不限于此，收集管11具体采用的材料还可以是其他材料。例如陶瓷等。
本申请实施例所提供的微型发光二极管转移装置10包括收集管11和驱动装置12，收集管11具有相对设置的第一端11a和第二端11b，所述收集管11包括收集口111和存储管112，所述收集口111与所述存储管112连通，所述收集口111设置在所述第一端11a，驱动装置12设置在所述第二端11b，所述驱动装置12用于提供驱动力，其中，所述驱动装置12用于提供驱动力以使得所述微型发光二极管20从所述收集口111被拾取到所述存储管112内，所述存储管112可层叠存储若干微型发光二极管20。传统的微型发光二极管转移装置采用阵列式转印头拾取微型发光二极管，这种阵列式转印头只能对应一种临时基板进行拾取，如果临时基板上的微型发光二极管的间距改变，就要更换转印头，而本申请微型发光二极管转移装置10，可以将微型发光二极管10依次独立地从收集口111拾取并存储到存储管112内，采用此方式，可以对不同区域的微型发光二极管20进行拾取，从而可以适应于从多个规格的基板上拾取微型发光二极管20，提高了收集微型发光二极管20的灵活性，并且，本申请可对微型发光二极管20单独进行拾取，或直接释放至目标基板。进一步提高微型发光二极管20在转移过程中的便利性，使得微型发光二极管20技术更加适合量产。
请参阅图5，图5是本申请实施例提供的微型发光二极管转移方法的流程示意图。其中，本申请实施例提供的一种微型发光二极管转移方法，包括如下步骤：
201、采用微型发光二极管转移装置从临时基板上拾取微型发光二极管。
需要说明的是，微型发光二极管转移装置为上述实施例中所述的微型发光二极管。由于上述实施例中微型发光二极管已经进行了详细的描述，因此，本申请实施例中对微型发光二极管转移装置不做过多赘述。
另外的，微型发光二极管转移装置中可以包括多个收集管同时拾取临时基板上的微型发光二极管。这样可以加快拾取微型发光二极管的速度。
202将所述微型发光二极管存储在所述微型发光二极管转移装置的收集管中。
需要说明的是，收集管的形状可以为圆柱形腔体、长方形腔体、三角形腔体、菱形腔体、多边形腔体中的任一种。收集管的形状可以根据微型发光二极管的具体形状做适应性的调整。
其中，所述收集管包括收集口和存储管，所述收集口与所述存储管连通，所述收集口设置在所述第一端，也就是说，微型发光二极管从收集口进入到存储管内，利用存储管存储微型发光二极管。且微型发光二极管层叠存储在存储管内。
比如，微型发光二极管的形状为圆形的，那么收集管的形状为圆柱形。收集管的管径大于微型发光二极管的直径。当微型发光二极管收纳在收集管中时，微型发光二极管可以依次层叠堆积，因此，收集管可以收集多个微型发光二极管。同时，由于收集的微型发光二极管是层叠堆积的，因此，将微型发光二极管转移到目标基板上时能够很好的排列。这样进一步地提高了微型发光二极管的转移速度。
203将所述收集管中的微型发光二极管转移到目标基板上。
需要说明的是，将收集管中的微型发光二极管与目标基板完成对位，将微型发光准确的转移到目标基板上，从而完成微型发光二极管的转移。
在一些实施例中，所述步骤“所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管”，包括步骤：
通过驱动装置提供驱动力从临时基板上拾取微型发光二极管，其中，所述驱动力为真空力、电磁力、静电力、装置内充满液体时产生的毛细管力中任一种。
需要说明的是，驱动装置可以包括处理器和动力装置，处理器可以接受处理信号，并控制动力装置产生动力。可以理解的是，动力装置可以是真空泵，真空泵可以产生真空吸引力，通过真空吸引力从而使得收集管可以拾取微型发光二极管。当然，动力装置也可以是电磁装置，电磁装置可以产生电磁力，电磁力可以使得收集管可以拾取微型发光二极管。当然，动力装置不限于此，本申请实施例中不做过多赘述。
在一些实施例中，所述步骤“所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管”，包括步骤：
（1）、将微型发光二极管从临时基板上剥离。
需要说明的是，将微型发光二极管从临时基板上剥离的方式可以是通过微型发光二极管转移剥离。具体的，通过微型发光二极管转移装置中的驱动装置，产生吸力，从而使得微型发光二极管从临时基板上剥离。通过微型发光二极管转移装置将微型发光二极管从临时基板上剥离，这种方式，不需要额外增加一道剥离工序，这样能够加快微型发光二极管的转移速度。
具体的，将微型发光二极管通过激光剥离装置从临时基板上剥离。
需要说明的是，通过激光剥离装置将微型发光二极管从临时基板上剥离，微型发光二极管转移装置可以拾取激光剥离装置剥离后的微型发光二极管。同时，微型发光二极管转移装置在拾取剥离的微型发光二极管时，可以通过重力拾取微型发光二极管。另外的，在收集管拾取微型发光二极管的过程中，可以控制驱动装置的产生驱动力，从而控制微型发光二极管在收集管中的下降速度。
（2）、微型发光二极管转移装置拾取从临时基板上剥离的微型发光二极管。
需要说明的是，收集管不仅将微型发光二极管从临时基板上剥离，同时收集管还将微型发光二极管收集并存储到收集管中，这样收集管能够起到多个作用，减少了转移微型发光二极管的工序，这样加快了转移微型发光二极管的速度。
在一些实施例中，所述步骤“所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管”之前，包括步骤：
（1）检测所述微型发光二极管是否合格。
需要说明的是，通过检测装置检测微型发光二极管是否合格。具体的检测方式可以检测微型发光二极管的电学特性、光学特性等是否符合规定。若微型发光二极管的电学特性或者光学特性合格则确认该微型发光二极管为合格的微型发光二极管。如果微型发光二极管的电学特性或者光学特性不合格则确认该微型发光二极管为不合格的微型发光二极管
（2）若所述微型发光二极管不合格，将不合格的微型发光二极管通过微型发光二极管转移装置转移到存储区域中。
需要说明的是，存储区域可以是一个用来存储不合格微型发光二极管的存储装置，也可以是存储在收集管内。如果，不合格的微型发光二极管存储在收集管内，则需要对不合格的微型发光二极管做出标记。从而确保不合格的微型发光二极管不会转移到目标基板上。可以理解的是，本申请实施例中所述的标记可以是处理器中的一种处理方式。
通过本申请实施例中对微型发光二极管的检测，可以确保将合格的微型发光二极管转移到目标基板上，从而确保转移到目标基板的微型发光二极管是可用的，这样可以提高显示装置的效果。
由于采用本申请微型发光二极管转移方法，可以对不同区域的微型发光二极管进行拾取，有效提高转移速度，并且，可对微型发光二极管单独进行拾取，或直接释放至目标基板。进一步提高微型发光二极管在转移过程中的便利性，使得微型发光二极管技术更加适合量产。
请参阅图6，图6是本申请实施例提供的显示装置100的结构示意图。其中，显示装置100包括基板102和微型发光二极管层101，所述微型发光二极管层101是采用上述微型发光二极管20转移方法转移的，上述实施例中微型发光二极管20转移方法已经详细描述，本申请实施例中不在过多赘述。
由于本申请实施例采用上述实施例中的微型发光二极管20转移方法，因此，本申请的显示装置100制造速度非常快，适合量产。
以上对本申请实施例提供的微型发光二极管转移装置、转移方法及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (7)

1.一种微型发光二极管转移方法，其特征在于，包括：
检测所述微型发光二极管是否合格；
若所述微型发光二极管不合格，将不合格的微型发光二极管通过微型发光二极管转移装置转移到存储区域中；
采用微型发光二极管转移装置从临时基板上拾取微型发光二极管，其中，收集管，具有相对设置的第一端和第二端，所述收集管包括收集口和存储管，所述收集口与所述存储管连通，所述收集口设置在所述第一端；
驱动装置，设置在所述第二端，所述驱动装置用于提供驱动力；
其中，所述驱动装置用于提供驱动力以使得所述微型发光二极管从所述收集口被拾取到所述存储管内，所述存储管层叠存储至少两个微型发光二极管；
将所述微型发光二极管存储在所述微型发光二极管转移装置的收集管中；
将所述收集管中的微型发光二极管转移到目标基板上。
2.根据权利要求1所述的微型发光二极管转移方法，其特征在于，所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管，包括：
通过驱动装置提供驱动力从临时基板上拾取微型发光二极管，其中，所述驱动力为真空力、电磁力、静电力、装置内充满液体时产生的毛细管力中任一种。
3.根据权利要求1所述的微型发光二极管转移方法，其特征在于，所述采用微型发光二极管转移装置从临时基板上拾取微型发光二极管，包括：
将微型发光二极管从临时基板上剥离；
微型发光二极管转移装置拾取从临时基板上剥离的微型发光二极管。
4.根据权利要求1所述的微型发光二极管转移方法，其特征在于，所述微型发光二极管转移装置包括至少两个收集管，多个所述收集管与同一驱动装置连接，所述收集管与所述驱动装置可拆卸连接，所述存储管包括至少两个子连接管，子连接管与子连接管可拆卸连接。
5.根据权利要求1所述的微型发光二极管转移方法，其特征在于，所述微型发光二极管转移装置还包括激光剥离装置，所述激光剥离装置用于从临时基板上剥离所述微型发光二极管。
6.根据权利要求1所述的微型发光二极管转移方法，其特征在于，所述收集管为圆柱形腔体、长方形腔体、三角形腔体、菱形腔体中的任一种。
7.根据权利要求1所述的微型发光二极管转移方法，所述收集管材料为聚酰亚胺塑料、聚乙烯塑料、聚对苯二甲酸乙二醇酯塑料、玻璃、石英、金属中的任一种。
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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112967972B (zh) * 2020-06-03 2022-03-25 重庆康佳光电技术研究院有限公司 一种微型发光二极管巨量转移装置及方法
CN112967978B (zh) * 2020-06-29 2022-10-21 重庆康佳光电技术研究院有限公司 转移头及芯片转移系统
CN112967950B (zh) * 2020-08-31 2022-02-18 重庆康佳光电技术研究院有限公司 转移装置与转移方法
CN112133210B (zh) * 2020-09-27 2022-06-17 湖北长江新型显示产业创新中心有限公司 一种Micro LED喷墨打印装置、转运方法、显示面板及显示装置
US20220344533A1 (en) * 2021-04-27 2022-10-27 Samsung Electronics Co., Ltd. Multi-use transfer mold and method of manufacturing display apparatus
CN114678451A (zh) * 2022-03-21 2022-06-28 Tcl华星光电技术有限公司 转移装置及显示面板的制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5888127A (en) * 1996-11-26 1999-03-30 Micron Technology, Inc. Apparatus to hold and remove an integrated circuit chip on a cutting chuck
CN201676674U (zh) * 2010-05-13 2010-12-22 旺诠科技(昆山)有限公司 一种折粒机推料机构
JP2017122608A (ja) * 2016-01-05 2017-07-13 信越半導体株式会社 欠陥検査装置
CN107039298A (zh) * 2016-11-04 2017-08-11 厦门市三安光电科技有限公司 微元件的转移装置、转移方法、制造方法、装置和电子设备
CN110544661A (zh) * 2018-05-29 2019-12-06 普因特工程有限公司 微led转印头及利用其的微led转印系统
CN110838503A (zh) * 2019-11-20 2020-02-25 广东省半导体产业技术研究院 微型led芯片制作方法、微型led显示器件制作方法和微型led显示器件

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN210050592U (zh) * 2019-04-25 2020-02-11 四川遂宁市利普芯微电子有限公司 一种led照明芯片叠层封装结构
CN111162034B (zh) * 2020-04-03 2020-09-25 Tcl华星光电技术有限公司 一种微型发光二极管转移装置、转移方法及显示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5888127A (en) * 1996-11-26 1999-03-30 Micron Technology, Inc. Apparatus to hold and remove an integrated circuit chip on a cutting chuck
CN201676674U (zh) * 2010-05-13 2010-12-22 旺诠科技(昆山)有限公司 一种折粒机推料机构
JP2017122608A (ja) * 2016-01-05 2017-07-13 信越半導体株式会社 欠陥検査装置
CN107039298A (zh) * 2016-11-04 2017-08-11 厦门市三安光电科技有限公司 微元件的转移装置、转移方法、制造方法、装置和电子设备
CN110544661A (zh) * 2018-05-29 2019-12-06 普因特工程有限公司 微led转印头及利用其的微led转印系统
CN110838503A (zh) * 2019-11-20 2020-02-25 广东省半导体产业技术研究院 微型led芯片制作方法、微型led显示器件制作方法和微型led显示器件

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